WO2009056491A1 - Composition de pâte cmp et procédé de planarisation de surfaces contenant du cuivre munies d'une couche de barrière de diffusion - Google Patents

Composition de pâte cmp et procédé de planarisation de surfaces contenant du cuivre munies d'une couche de barrière de diffusion Download PDF

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Publication number
WO2009056491A1
WO2009056491A1 PCT/EP2008/064434 EP2008064434W WO2009056491A1 WO 2009056491 A1 WO2009056491 A1 WO 2009056491A1 EP 2008064434 W EP2008064434 W EP 2008064434W WO 2009056491 A1 WO2009056491 A1 WO 2009056491A1
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Prior art keywords
copper
diffusion barrier
removal rate
cmp slurry
barrier layer
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PCT/EP2008/064434
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English (en)
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Kai Yang
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Basf Se
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Publication of WO2009056491A1 publication Critical patent/WO2009056491A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Definitions

  • the present invention relates to the manufacture of integrated circuits, and in particular to Chemical-Mechanical-Polishing of tantalum barrier layers used in copper metallization.
  • copper has replaced aluminum as the preferred electrical interconnect material.
  • the use of copper as an interconnect material in silicon integrated circuits has occurred in response to the need for lowered interconnect resistivity, good electromigration resistance, and good deposition characteristics which allow effective filling of vias and contacts.
  • ILD Interlevel Dielectric
  • a barrier layer is deposited, which serves to prevent diffusion of copper from the metal lines into the dielectric. This barrier layer is generally comprised of Ta or Ta compounds.
  • a copper seed layer is then generally deposited, followed by an electroplated copper layer. The excess copper is then removed by a process known as Chemical Mechanical Polishing (CMP).
  • CMP Chemical Mechanical Polishing
  • CMP enhances the removal of surface material over large distances and short distances by simultaneously mechanically abrading the surface while a chemical etchant selectively chemically attacks the surface.
  • CMP utilizes a polishing slurry containing both an abrasive and a chemically active component.
  • the CMP is performed in two steps.
  • the first CMP step removes the excess copper from the wafer surface, and may also remove part or all of the underlying barrier layer.
  • a second CMP step is then generally performed, with the objectives of
  • the second CMP step must have optimal selectivi- ties among Cu, dielectrics, and barrier, thereby optimally compensating for Cu dishing created during the first-step CMP.
  • quality of the polished surfaces both Cu and Si ⁇ 2, with respect to both surface damage/roughness and foreign materials on the surface.
  • Post CMP cleaning can only address removal of solid particles and ionic contamination.
  • Slurries designed to polish tantalum containing layers generally contain abrasives such as alumina, titania, silica, oxidizing agents such as hydrogen peroxide, potassium io- date or potassium ferricyanide, and other optional additives. If aggressive polishing methodologies are used to remove the chemically passive and mechanically hard tan- talum containing layers, generally the soft surface layers underlying the tantalum layer, such as SiC"2 or a low k material, can be damaged.
  • the Ta barrier polishing can result in dishing and anti-dishing depending on the polishing selectivities. Dishing and anti-dishing refer to recess and protrusion of metal inter- connects comparing to the adjacent dielectric film, respectively.
  • the preferred abrasive used in slurries for Ta barrier polishing is silica, although other abrasives such as alumina have been used.
  • the advantages to using silica abrasive in place of the alumina abrasive commonly used in other CMP applications include:
  • a typical silica abrasive slurry used for Ta barrier polishing comprises 20-200 nm diameter silica particles suspended in an aqueous medium.
  • copper corrosion inhibiting compounds such as benzotriazole or 1 ,2,4-triazole (hereinafter referred to as "triazole"), are typically dissolved in the slurry medium, and the pH of the suspension is adjusted to a value between pH 7 and pH 10. 5, which is the range empirically found to produce the lowest corrosion rates.
  • Triazole copper corrosion inhibiting compounds
  • the pH of the suspension is adjusted to a value between pH 7 and pH 10. 5, which is the range empirically found to produce the lowest corrosion rates.
  • KOH was found to be a suitable pH adjuster for colloidal silica based CMP slurries.
  • the slurry medium contain dissolved or undissolved dielectrics, copper, and tantalum in addition to the formulating slurry ingredients.
  • the precipitated residues which are comprised in part of conducting materials, ad- versely affect device yield and reliability, for example by causing shorting and/or line-to- line leakage. Residues and precipitates additionally prevent the dielectric barrier from effectively sealing the top surface of the copper line, resulting in copper diffusion into the dielectric as well as providing a surface electromigration path for copper atoms.
  • a slurry for etching Tantalum barriers containing a silica abrasive, a copper corrosion inhibitor like triazole or benzotriazole, and an organic additive which can be selected from polyvinyl alcohol (PVA), PVA-poly (vinyl acetate) co-polymer, PVA-polyethylene co-polymer, sorbitol, glycerol, polyacrylamide (PAA), ethylene glycol, di (ethylene glycol), poly (ethylene glycol) (PEG), glycerol eth- oxylate (GEO), dimethylsiloxane-ethylene oxide co-polymer (DMSiO-EO), polyethylene oxide surfactants, octylphenol polyethylene oxide, nonylphenol polyethylene oxide, polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, perfluorinated analogs of polyethylene oxide surfactants, glycerol propoxylate (GPO)
  • PVA polyvinyl alcohol
  • WO 02/059393 deals with acid based barrier CMP slurries having substantially 1 :1 removal rate for Cu and Ta/TaN to realize a one step polishing.
  • Typical slurries described therein comprise an abrasive like silica or alumina, an oxidizer like HNO3, H2O2, a corrosion inhibitor like BTA.
  • mono and polyhydroxy compounds like ethanol, propanol, or glycerol are used in the slurries.
  • KOH may be used as a pH adjuster.
  • WO 02/059393 discloses basic slurries comprising a base like KOH or NH 4 OH in combination with an oxidizer like H2O2 or (NH4)2S2 ⁇ s, optionally with several other additives. Polyhydroxy compounds are only used in acidic slurries.
  • a slurry for planarization of copper containing surfaces, in particu- lar Cu/Ta surfaces comprising an abrasive like silica having a mean particles size of 100 nm or more, an oxidizer like H2O2, a corrosion inhibitor like BTA, a particular amphiphilic non-ionic surfactant, and an organic acid.
  • the pH is adjusted with KOH to a pH of 10.
  • the slurries may comprise further optional components.
  • One of these are complexing agents like di-, tri, or polyalcohols, e.g. eth- ylene glycol, pyrocatechol, pyrogallol, tannic acid, and the like.
  • barrier CMP slurries there is still a need for a barrier CMP slurry and process which provides very high polishing rates combined with reduced dishing and erosion.
  • a slurry composition for planarizing surfaces comprising copper and a diffusion barrier layer
  • said slurry comprising:
  • an abrasive an oxidizer, a corrosion inhibitor, a monomeric polyhydroxy compound, a base,
  • the slurry composition having a pH of from 7 to 13.
  • the barrier CMP slurry does not comprise a polymeric polyhydroxy compound.
  • a method for polishing a substrate comprising at least one metal layer, said metal layer comprising copper, and at least one diffusion barrier layer is provided, the method comprising:
  • a method for adjusting a removal rate selectivity r(Ta)/r(Cu) and/or r(dielectrics)/r(Cu) of a slurry for polishing a substrate comprising at least one metal layer, at least one diffusion barrier layer and at least one dielectric layer, comprising copper
  • the method comprising adding a monomeric polyhydroxy compound to the slurry to increase the removal rate selectivity r(Ta)/r(Cu) and/or r(dielectrics)/r(Cu) until a specified removal rate selectivity r(Ta)/r(Cu) and/or r(dielectrics)/r(Cu) is obtained, wherein r(Ta) is the removal rate of the diffusion barrier layer, r(Cu) is the removal rate of the at least one metal layer comprising copper, and r(dielectrics) is the removal rate of the dielectric layer.
  • a further aspect of the present invention is the use of a monomeric polyhydroxy compound for adjusting a removal rate selectivity r(Ta)/r(Cu) and/or r(dielectrics)/r(Cu) of a slurry for polishing a substrate comprising at least one metal layer at least one diffusion barrier layer and at least one dielectric layer, said metal layer comprising copper, wherein r(Ta) is the removal rate for the diffusion barrier layer, r(Cu) is the removal rate of the at least one metal layer comprising copper, and r(dielectrics) is the removal rate of the dielectric layer.
  • Fig. 1 the dependency of removal rate on the concentration of the monomeric polyhydroxy compound
  • Fig. 2 the dependency of removal rate non-uniformity on the concentration of the monomeric polyhydroxy compound.
  • the abrasive can have any suitable particle size and is selected from the group consisting of silica, ceria, titania, zirconia, co-formed particles thereof, polymer particles, polymer-coated particles thereof, polymer-coated alumina, and combinations thereof.
  • the abrasive is a silica abrasive or a polyelectrolyte-coated alumina abrasive (e. g. polystyrenesulfonic acid-coated alumina abrasive).
  • Silica abrasives and polymer-coated alumina abrasives are particularly desirably when polishing soft metal layers such as copper which can easily be scratched by hard abrasives such as alumina abrasives.
  • the abrasive typically has a mean primary particle size of 10 nm or greater, preferably 20 nm or greater, most preferably 25 nm or greater.
  • the term "particle size" is used herein synonymously to the "mean particle diameter".
  • the mean primary particle size typically is 1 micron or less, preferably 500 nm or less, even more preferably 100 nm or less, most preferably 80 nm or less.
  • the abrasive preferably has a primary particle size of from 20 to 100 nm, particularly from 25 to 80 nm.
  • the particle size can be determined by sieve analysis or optical methods like transmission electron microscopy. In doubt the reference method for determination of the mean diameter is by transmission electron microscopy.
  • the particles may have a monomodal, bimodal or multimodal particle size distribution, a monomodal distribution being preferred.
  • the abrasive may consist of one or more than one type of abrasive particles, the use of one particle type being preferred.
  • the abrasive comprises silica, more preferably the major amount of the abrasive is silica, most preferably the abrasive essentially consists of silica.
  • Silica based particles are preferably produced in a sol-gel process.
  • the abrasive of any of the embodiments described herein is preferably colloidally stable.
  • Colloid refers to the suspension of abrasive particles in the liquid carrier and colloidal stability refers to the maintenance of that suspension through time.
  • an abrasive is considered colloidally stable if, when the abrasive is placed into a 100 ml graduated cylinder and allowed to stand unagitated for a time of 2 hours, the difference between the concentration of particles in the bottom 50 ml of the graduated cylinder ([B] in terms of g/ml) and the concentration of particles in the top 50 ml of the graduated cylinder ([T] in terms of g/ml) divided by the initial concentration of particles in the abrasive composition ([C] in terms of g/ml) is less than or equal to 0.8
  • the abrasive particles can be prepared by any known method as far as the content of foreign ions is sufficiently low for semiconductor treatment. Those methods are well known in the art.
  • the content of foreign ions in the silica is preferably below 1 ppm.
  • colloidal silica As the abrasive. Fumed silica can also be used with high removal rates, but it generally gives higher scratch defects and less colloidal stability and is therefore less preferred.
  • the colloidal silica is prepared by a sol-gel-process from tetramethyl orthosilicate (TMOS) or tetraethyl orthosilicate (TEOS). Such silica is commercially available for example from Fuso Chemicals. When using this type of silica the stability of hydrogen peroxide in the slurry is particularly high.
  • the abrasive can be in any suitable form.
  • the abrasive may be spherical or non- spherical, the non-spherical shape being preferred.
  • Non-spherical particles may for example be cocoon shaped as described in US 2005/0258139 A1 and available from Fuso . Alternatively the shape may be nodal as described in WO 03/042322 A1.
  • Particularly cocoon-shaped particles show increased polishing rates and in particular increased ratios of polishing Ta/TaN barrier layers in relation to copper.
  • the particle size of Fuso PL3 is smaller the removal rate for Ta is significantly higher than the removal rate of the reference silica whereas the copper removal rate decreases.
  • the polishing slurry typically comprise 0.1 wt. % to 30 wt. %, preferably 1 wt. % to 25 wt. %, even more preferably 3 wt.% to 20 wt.%, even more preferably 5 wt.% to 18 wt.%, most preferably 7 wt. % to 15 wt. % abrasive.
  • the barrier CMP slurries according to the present invention further comprise an oxidizer.
  • the oxidizer can be any suitable compound for oxidizing the barrier substrate.
  • the oxidizer may be skipped in the slurry and substituted or complemented by an electro- chemical process.
  • the means for oxidizing the substrate comprises a device for applying a time-varying potential to the substrate as for example described in U. S. Patent No. 6,379,223.
  • the chemical oxidizing agent can be any suitable oxidizing agent.
  • Suitable oxidizing agents include inorganic and organic per-compounds, bromates, nitrates, chlorates, chromates, iodates, iron and copper salts (e. g. nitrates, sulfates, ethylenediamine- tetraacetic acid (EDTA), and citrates), rare earth and transition metal oxides (e. g., osmium tetraoxide), potassium ferricyanide, potassium dichromate, iodic acid, and the like.
  • a per-compound is a compound containing at least one peroxy group (-O-O-) or a compound containing an element in its highest oxidation state.
  • compounds containing at least one peroxy group include but are not limited to hydrogen peroxide and its adducts such as urea hydrogen peroxide and percarbonates, organic peroxides such as benzoyl peroxide, peracetic acid, and di-tert-butyl peroxide, monopersulfates (SOs 2" ), dipersulfates (S2O8 2” ), and sodium peroxide.
  • Examples of compounds containing an element in its highest oxidation state include but are not limited to periodic acid, periodate salts, perbromic acid, perbromate salts, perchloric acid, perchlorate salts, perboric acid, perborate salts, and permanga- nates.
  • the oxidizing agent preferably is hydrogen peroxide.
  • the polishing system especially the CMP system (particularly the polishing composition), typically comprises 0.01 wt. % to 5 wt. %, preferably 0.03 wt. % to 3 wt. %, more preferably 0.05 wt. % to 3 wt. %, most preferably 0.05 wt. % to 2 wt. % oxidizing agent.
  • the corrosion inhibitor can be any suitable corrosion inhibitor.
  • the corrosion inhibitor is an organic compound containing a heteroatom-containing functional group.
  • the corrosion inhibitor is an N-containing heterocyclic compound.
  • the corrosion inhibitor is a heterocyclic organic compound with at least one 5-or 6- member heterocyclic ring as the active functional group, wherein the heterocyclic ring contains at least one nitrogen atom, for example, an azole compound.
  • the corrosion inhibitor is a triazole compound; more preferably, 1 ,2, 4- triazole, 1 ,2, 3-triazole, or benzotriazole.
  • the amount of corrosion inhibitor used in the polishing system typically is 0.0001 to 3 wt. %, preferably 0.001 to 2 wt. %, most preferably 0.002 to 0.3 wt %.
  • Bezotriazole since it does not significantly affect the removal rate of Ta/TaN and oxide. Because Benzotriazole as well as many other corrosion in- hibitors have low solubility in water, it is preferred to first dissolve benzotriazole in the monomeric polyhydroxy compound when producing the barrier CMP slurry.
  • a liquid carrier is used to facilitate the application of the abrasive to the surface of a suitable substrate to-be polished and acts a suspension medium for the abrasive as well as solvent or suspension medium for the other components of the barrier CMP slurry.
  • the liquid carrier preferably is an aqueous carrier and can be water alone, can comprise water and a suitable water-miscible solvent, or can be an emulsion. Suitable water-miscible solvents include alcohols such as methanol, ethanol, etc.
  • the aqueous carrier essentially consists of water, most preferably of deionized water.
  • the polishing composition further comprises a base to raise the pH to a strongly basic value.
  • a base to raise the pH to a strongly basic value.
  • the removal rate of dielectric films including TEOS, FSG, and black diamond (BD) films, increases.
  • Higher pH values also improve removal rate of tantalum and tantalum nitride films.
  • the removal rate of copper film decreases as pH increases.
  • the polishing composition has a pH of from 7 to 13. It is preferred to use a slurry hav- ing a pH of 8 to 12, more preferably having a pH of 8.5 to 1 1 , most preferably having a pH of 9 to 10.5.
  • the base may be any strong or week base like alkali metal hydroxides, ammonia, primary, secondary or tertiary ammonium hydroxides, quaternized ammonium hydroxides like tetramethylammonium hydroxide (TMAH) etc. It is particularly preferred to use KOH since KOH, in contrast to other bases, does have an enhancing effect on the pol- ishing rate of tantalum and no copper corrosion.
  • the concentration of the base is preferably 0.01 to 5 wt. %, more preferably 0.02 to 3 wt. %, most preferably 0.05 to 2 wt. %.
  • the base preferably KOH, must be sufficiently pure to avoid rapid decomposition of hydrogen peroxide.
  • the transitional metal impurities, such as Fe, Cu, are preferably less than 1 ppm.
  • a monomeric polyhydroxy compound like ethylene glycol improves the removal rate of Ta, TaN and oxide (dielectrics).
  • the polyhydroxy compound lowers the removal rate of copper. Therefore a monomeric polyhydroxy compound, in particular ethylene or propylene glycol can be used as removal rate enhancer for Ta, TaN and oxide layers, as well as removal rate reducer for copper. If Ta/TaN or Si ⁇ 2 is present in combination with copper there is the opportunity to ad- just the removal rate selectivity of the slurry.
  • Fig. 1 shows the dependency of the removal rates for Ta, oxide and Cu on the ethylene glycol content of a slurry prepared according to example 1 (see table 1 ).
  • the removal rate of Ta and oxide both significantly increase with increasing content of ethylene gly- col from below 600 to above 700 A/min and from about 330 to about 430 A/min, respectively, whereas the removal rate of copper decreases significantly from about 450 to about 350 A/min.
  • the monomeric polyhydroxy compound can also improve polishing uniformity as can be seen from Fig. 2.
  • the slurry was prepared according to example 1.
  • the non- uniformity was determined by 49-points measurements on the wafer.
  • the points were selected at points that are at least 5 mm from the edge
  • the polishing composition further comprises a monomeric polyhydroxy compound.
  • Polyhydroxy according to the present application means a compound comprising two or more hydroxyl groups, preferably two, three or four hydroxyl groups, most preferably two hydroxyl groups.
  • the monomeric polyhydroxy compound has the function of a removal rate enhancer of tantalum surfaces.
  • it acts as dissolution promoter of corrosion inhibitor as well as wetting agent and lubricant.
  • the monomeric polyhydroxy compound is selected from compounds of formula I
  • R 1 is H, CrC 4 alkyl
  • R 2 is H, CrC 4 alkyl or OH
  • n is 2 to 6.
  • the monomeric polyhydroxy compound is selected from compounds of formula I in which R 1 and R 2 are independently H or C1-C2 alkyl and n is 2 to 4. Most preferably the monomeric polyhydroxy compound is selected from ethylene glycol, propylene glycol or glycerol, particularly ethylene glycol.
  • the barrier CMP slurry preferably contains the monomeric polyhydroxy compound in an amout of 0.1 to 20 wt.%, more preferably of 0.2 to 15 wt. %, even more preferably 0.3 to 10 wt. %, even more preferably 0.3 to 8 wt. %, even more preferably 0.4 to 6 wt. %, even more preferably 0.4 to 5 wt. %, most preferably of 0.5 to 4 wt. %.
  • the monomeric polyhydroxy compound is preferably completely soluble in the liquid carrier, e.g. water.
  • the CMP systems optionally can further comprise one or more pH adjusters, regula- tors, or buffers, and the like.
  • pH adjusters may be strong or weak acids to (partly) compensate the base and to adjust the pH to the intended value.
  • the acids may be organic or inorganic, the organic acids being preferred.
  • Suitable pH adjusters, regulators, or buffers can include, for example sulphuric acid, hydrochloric acid, acetic acid, nitric acid, phosphoric acid, citric acid, potassium phosphate, mixtures thereof, and the like.
  • a particularly preferred pH-adjuster is acetic acid since it enhances copper removal rate and improves copper surface smoothness.
  • the CMP systems optionally can further comprise other components.
  • Such other components include complexing or chelating agents, biocides, anti-foaming agents, and the like.
  • Surfactants may also be used in the barrier CMP slurry.
  • the use of non-ionic surfactants, if any, is preferred.
  • ethoxylated aliphatic alcohols like Triton DF16 of Dow Chemicals are used.
  • Non-ionic surfactant can signifi- cantly reduce removal rate of blanket black diamond film.
  • the slurry essentially consists of an abrasive, an oxidizer, an N-containing heterocyclic compound, a monomeric polyhydroxy compound, a base, a liquid carrier, and optionally an organic acid, all of which independently being selected from a single compound or a mixture of compounds.
  • the slurry essentially consists of silica, an oxidizer, an N-containing heterocyclic compound, a monomeric polyhydroxy compound, a base, and a liquid carrier and optionally an organic acid and/or a non-ionic surfactant.
  • the slurry essentially consists of an abrasive, an oxidizer, a triazole compound, a base, ethylene glycol and water and optionally an organic acid and/or a non-ionic surfactant.
  • the slurry essentially consists of an abrasive, H2O2, a triazole compound, KOH, ethylene glycol, water, and optionally acetic acid and/or a non-ionic surfactant.
  • the slurry essentially consists of a silica, H2O2, benzotriazole, KOH, ethylene glycol, acetic acid, a non-ionic surfactant and water.
  • the barrier CMP slurry is intended for use in polishing (or planarizing) a substrate comprising a copper layer and a barrier layer.
  • the substrate typically is a microelectronic (e. g., semiconductor) substrate and optionally further comprises a dielectric layer.
  • the dielectric layer can have any suitable dielectric constant (e. g., 3.5 or more, or 3.5 or less).
  • the dielectric layer can comprise silicon dioxide or an organically modified silicon glass, such as carbon-doped silicon dioxide.
  • the microelectronic substrates typically are formed by etching trenches or vias into a dielectric layer such as an oxide film.
  • the trenches or vias are then lined with a thin barrier film, for example by physical vapor deposition (PVD), or by chemical vapor deposition (CVD).
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • a copper layer is then deposited over the barrier film so as to completely fill the trenches and vias and overlay the barrier film.
  • a first CMP process takes place so as to remove the conductive metal layer down to the barrier film.
  • a second CMP process, using the barrier CMP slurry according to the present invention then takes place to remove the barrier film and any excess conductive metal layer down to the dielectric material.
  • the combination of the components, particularly the ethylene glycol in the barrier CMP slurry can reduce the amount of dishing of the copper layer during removal of the barrier layer, and/or can reduce the scratching and/or erosion of the dielectric layer.
  • the diffusion barrier layer is preferably a Ta or a TaN layer.
  • the CMP systems described herein are particularly suited for use in conjunction with a chemical-mechanical polishing (CMP) apparatus.
  • the apparatus comprises a platen, which, when in use, is in motion and has a velocity that results from orbital, linear, or circular motion, a polishing pad in contact with the platen and moving with the platen when in motion, and a carrier that holds a substrate to be polished by contacting and moving relative to the surface of the polishing pad intended to contact a substrate to be polished.
  • the polishing of the substrate takes place by the substrate being placed in contact with the polishing pad and then the polishing pad moving relative to the substrate, typically with a polishing composition of the invention therebetween, so as to abrade at least a portion of the substrate to polish the substrate.
  • the CMP apparatus can be any suitable CMP apparatus, many of which are known in the art.
  • Table 1 shows the removal rate increasing effect of ethylene glycol for Tantalum and Oxide and the removal rate decreasing effect for cop- per. Furthermore table 1 and fig. 2 show the increasing removal rate uniformity when using ethylene glycol.
  • the H2O2 concentrations in the table refers to the content of 30% H2O2 in water (in contrast to the description above referring to absolute H2O2 content ).
  • Example 1 was repeated with changed compositions in the barrier CMP slurry. All relevant data are listed in table 2.

Abstract

L'invention concerne une composition de pâte CMP pour la planarisation de surfaces comprenant du cuivre et une couche de barrière de diffusion. Selon l'invention, la composition comprend : un abrasif, un oxydant, un inhibiteur de corrosion, un composé polyhydroxy monomère, une base, la composition de pâte ayant un pH de 7 à 13.
PCT/EP2008/064434 2007-10-29 2008-10-24 Composition de pâte cmp et procédé de planarisation de surfaces contenant du cuivre munies d'une couche de barrière de diffusion WO2009056491A1 (fr)

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EP2625236A1 (fr) * 2010-10-07 2013-08-14 Basf Se Composition de polissage aqueuse et procédé pour polissage chimique-mécanique de substrats ayant des couches diélectriques à faible k structurées ou non structurées
EP2682441A1 (fr) * 2012-07-06 2014-01-08 Basf Se Composition de polissage mécanique et chimique (CMP) comprenant un tensioactif non ionique et un composé aromatique comprenant au moins un groupe acide
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WO2016094028A1 (fr) * 2014-12-12 2016-06-16 Cabot Microelectronics Corporation Compositions de polissage mécano-chimique présentant un bombage réduit dans le polissage de plaquettes à isolation par tranchées peu profondes
EP3263667A1 (fr) * 2016-07-01 2018-01-03 Versum Materials US, LLC Additifs de planarisation chimico-mécanique de barrière
EP3239262A4 (fr) * 2014-12-26 2018-01-10 Fujimi Incorporated Composition de polissage, procédé de polissage et procédé de fabrication d'un objet en céramique
WO2019070470A1 (fr) * 2017-10-05 2019-04-11 Fujifilm Planar Solutions, LLC Compositions de polissage contenant un abrasif chargé
US11001733B2 (en) 2019-03-29 2021-05-11 Fujimi Incorporated Compositions for polishing cobalt and low-K material surfaces

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EP1445796A1 (fr) * 2001-10-26 2004-08-11 Asahi Glass Company Ltd. Procede et compose de polissage, et son procede de production
US20050076578A1 (en) * 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
EP1757665A1 (fr) * 2005-08-24 2007-02-28 JSR Corporation Dispersion aqueuse pour le polissage mécano-chimique, kit pour la préparation de cette dispersion pour le polissage mécano-chimique, et procédé pour la fabrication de dispositifs semiconducteurs

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EP2625236A4 (fr) * 2010-10-07 2014-05-14 Basf Se Composition de polissage aqueuse et procédé pour polissage chimique-mécanique de substrats ayant des couches diélectriques à faible k structurées ou non structurées
EP2682441A1 (fr) * 2012-07-06 2014-01-08 Basf Se Composition de polissage mécanique et chimique (CMP) comprenant un tensioactif non ionique et un composé aromatique comprenant au moins un groupe acide
EP2870599A4 (fr) * 2012-07-06 2016-03-30 Basf Se Composition de polissage mécano-chimique (pmc) comprenant un tensioactif non ionique et un composé aromatique ayant au moins un groupe acide
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EP2995662A1 (fr) * 2014-09-05 2016-03-16 Fujifilm Planar Solutions LLC Compositions de polissage et procédés de polissage de films de cobalt
JP2016058730A (ja) * 2014-09-05 2016-04-21 フジフィルム プラナー ソリューションズ、エルエルシーＦｕｊｉｆｉｌｍ Ｐｌａｎａｒ Ｓｏｌｕｔｉｏｎｓ， Ｌｌｃ 研磨用組成物及びコバルト膜の研磨方法
US9735031B2 (en) 2014-09-05 2017-08-15 Fujifilm Planar Solutions, LLC Polishing compositions and methods for polishing cobalt films
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CN105400434B (zh) * 2014-09-05 2019-03-29 富士胶片平面解决方案有限公司 抛光组合物及抛光钴膜的方法
WO2016094028A1 (fr) * 2014-12-12 2016-06-16 Cabot Microelectronics Corporation Compositions de polissage mécano-chimique présentant un bombage réduit dans le polissage de plaquettes à isolation par tranchées peu profondes
TWI579371B (zh) * 2014-12-12 2017-04-21 卡博特微電子公司 於ｓｔｉ晶圓拋光展現減少凹陷之ｃｍｐ組合物
EP3239262A4 (fr) * 2014-12-26 2018-01-10 Fujimi Incorporated Composition de polissage, procédé de polissage et procédé de fabrication d'un objet en céramique
US10626297B2 (en) 2014-12-26 2020-04-21 Fujimi Incorporated Polishing composition, polishing method, and method for manufacturing ceramic component
CN107586517A (zh) * 2016-07-01 2018-01-16 弗萨姆材料美国有限责任公司 用于屏障化学机械平面化的添加剂
EP3263667A1 (fr) * 2016-07-01 2018-01-03 Versum Materials US, LLC Additifs de planarisation chimico-mécanique de barrière
US10253216B2 (en) 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
CN107586517B (zh) * 2016-07-01 2020-11-13 弗萨姆材料美国有限责任公司 用于屏障化学机械平面化的添加剂
WO2019070470A1 (fr) * 2017-10-05 2019-04-11 Fujifilm Planar Solutions, LLC Compositions de polissage contenant un abrasif chargé
US10428241B2 (en) 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
US10808145B2 (en) 2017-10-05 2020-10-20 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
US11034861B2 (en) 2017-10-05 2021-06-15 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
US11674056B2 (en) 2017-10-05 2023-06-13 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
US11001733B2 (en) 2019-03-29 2021-05-11 Fujimi Incorporated Compositions for polishing cobalt and low-K material surfaces

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