WO2009054232A1 - Appareil et procede de fabrication de semiconducteurs et dispositif electronique associe - Google Patents

Appareil et procede de fabrication de semiconducteurs et dispositif electronique associe Download PDF

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Publication number
WO2009054232A1
WO2009054232A1 PCT/JP2008/067664 JP2008067664W WO2009054232A1 WO 2009054232 A1 WO2009054232 A1 WO 2009054232A1 JP 2008067664 W JP2008067664 W JP 2008067664W WO 2009054232 A1 WO2009054232 A1 WO 2009054232A1
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Prior art keywords
semiconductor manufacturing
chamber
introducing
semiconductor
gas
Prior art date
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PCT/JP2008/067664
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English (en)
Japanese (ja)
Inventor
Yoshimi Shioya
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Nanomaterial Laboratory Co., Ltd.
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Application filed by Nanomaterial Laboratory Co., Ltd. filed Critical Nanomaterial Laboratory Co., Ltd.
Priority to JP2008549301A priority Critical patent/JPWO2009054232A1/ja
Publication of WO2009054232A1 publication Critical patent/WO2009054232A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
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    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
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    • H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

La présente invention a pour objet la formation d'un film empêchant la diffusion d'ions et présentant une bonne adhérence à un substrat de verre. L'invention concerne un appareil de fabrication de semiconducteurs comprenant un premier moyen d'introduction servant à introduire un gaz semiconducteur non excité dans une chambre, et un deuxième moyen d'introduction servant à introduire un gaz non semiconducteur excité dans la chambre. Le premier moyen d'introduction comprend un premier tuyau d'acheminement de gaz s'étendant d'un cylindre, dans lequel est stocké le gaz semiconducteur, directement à la chambre, sans passer par un appareil à plasmadistant. Le deuxième moyen d'introduction comprend un deuxième tuyau d'acheminement de gaz s'étendant d'un cylindre, dans lequel est stocké le gaz non semiconducteur, à la chambre, en passant par l'appareil à plasma distant.
PCT/JP2008/067664 2007-10-22 2008-09-29 Appareil et procede de fabrication de semiconducteurs et dispositif electronique associe WO2009054232A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008549301A JPWO2009054232A1 (ja) 2007-10-22 2008-09-29 半導体製造装置、半導体製造方法及び電子機器

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007274122 2007-10-22
JP2007-274122 2007-10-22
JP2008-175480 2008-07-04
JP2008175480 2008-07-04

Publications (1)

Publication Number Publication Date
WO2009054232A1 true WO2009054232A1 (fr) 2009-04-30

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JP2014013905A (ja) * 2007-10-22 2014-01-23 Applied Materials Inc 基板上に酸化ケイ素層を形成する方法
KR20120044342A (ko) * 2009-06-18 2012-05-07 호야 가부시키가이샤 마스크 블랭크 및 전사용 마스크와 전사용 마스크의 제조 방법
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KR20110129685A (ko) * 2010-05-26 2011-12-02 주식회사 탑 엔지니어링 화학 기상 증착 장치 및 방법
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