WO2009053021A3 - Verfahren und vorrichtung zur beschichtung eines trägers für dünnschichtsolarzellen - Google Patents
Verfahren und vorrichtung zur beschichtung eines trägers für dünnschichtsolarzellen Download PDFInfo
- Publication number
- WO2009053021A3 WO2009053021A3 PCT/EP2008/008877 EP2008008877W WO2009053021A3 WO 2009053021 A3 WO2009053021 A3 WO 2009053021A3 EP 2008008877 W EP2008008877 W EP 2008008877W WO 2009053021 A3 WO2009053021 A3 WO 2009053021A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- carrier
- coating
- thin
- solution
- solar cells
- Prior art date
Links
- 239000011248 coating agent Substances 0.000 title abstract 2
- 238000000576 coating method Methods 0.000 title abstract 2
- 239000010409 thin film Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 abstract 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 abstract 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 abstract 1
- 239000006096 absorbing agent Substances 0.000 abstract 1
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 abstract 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02557—Sulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Coating Apparatus (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08842554A EP2212927B1 (de) | 2007-10-22 | 2008-10-21 | Verfahren und vorrichtung zur beschichtung eines trägers für dünnschichtsolarzellen |
CN2008801230588A CN101919069A (zh) | 2007-10-22 | 2008-10-21 | 用于涂覆薄膜太阳能电池的载板的方法和装置 |
JP2010530320A JP2011501447A (ja) | 2007-10-22 | 2008-10-21 | 薄膜太陽電池のためのキャリアを被膜するための方法及び装置 |
AU2008315909A AU2008315909A1 (en) | 2007-10-22 | 2008-10-21 | Method and device for coating a carrier for thin-film solar cells |
CA2703250A CA2703250A1 (en) | 2007-10-22 | 2008-10-21 | Method and device for coating a carrier for thin-film solar cells |
AT08842554T ATE529898T1 (de) | 2007-10-22 | 2008-10-21 | Verfahren und vorrichtung zur beschichtung eines trägers für dünnschichtsolarzellen |
US12/738,944 US20110124149A1 (en) | 2007-10-22 | 2010-04-20 | Method and device for coating a carrier for thin-film solar cells |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007052237.3 | 2007-10-22 | ||
DE102007052237A DE102007052237A1 (de) | 2007-10-22 | 2007-10-22 | Verfahren und Vorrichtung zur Beschichtung eines Trägers für Dünnschichtsolarzellen |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/738,944 Continuation US20110124149A1 (en) | 2007-10-22 | 2010-04-20 | Method and device for coating a carrier for thin-film solar cells |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009053021A2 WO2009053021A2 (de) | 2009-04-30 |
WO2009053021A3 true WO2009053021A3 (de) | 2009-07-02 |
Family
ID=40490351
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2008/008877 WO2009053021A2 (de) | 2007-10-22 | 2008-10-21 | Verfahren und vorrichtung zur beschichtung eines trägers für dünnschichtsolarzellen |
Country Status (10)
Country | Link |
---|---|
US (1) | US20110124149A1 (de) |
EP (1) | EP2212927B1 (de) |
JP (1) | JP2011501447A (de) |
KR (1) | KR20100088139A (de) |
CN (1) | CN101919069A (de) |
AT (1) | ATE529898T1 (de) |
AU (1) | AU2008315909A1 (de) |
CA (1) | CA2703250A1 (de) |
DE (1) | DE102007052237A1 (de) |
WO (1) | WO2009053021A2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013008838A (ja) * | 2011-06-24 | 2013-01-10 | Fujifilm Corp | 光電変換素子のバッファ層の製造方法および光電変換素子の製造方法 |
CN103008168B (zh) * | 2012-12-12 | 2015-06-03 | 深圳先进技术研究院 | 沉积薄膜的装置和方法 |
CN107934345B (zh) * | 2017-12-15 | 2024-03-19 | 深圳市华信一机械有限公司 | 一种密闭电池水浴内化成自动仓储系统及控制方法 |
CN108666248A (zh) * | 2018-07-05 | 2018-10-16 | 北京铂阳顶荣光伏科技有限公司 | 一种膜层清洗装置、膜层清洗系统及清洗方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6211043B1 (en) * | 1997-09-05 | 2001-04-03 | Matsushita Battery Industrial Co., Ltd. | Method of manufacturing a compound semiconductor thin film on a substrate |
US20020043278A1 (en) * | 2000-10-18 | 2002-04-18 | Matsushita Electric Industrial Co., Ltd. | Solar cell |
US20060024960A1 (en) * | 2003-09-26 | 2006-02-02 | Meth Jeffrey S | Method for producing thin semiconductor films by deposition from solution |
WO2006018013A1 (de) * | 2004-08-18 | 2006-02-23 | Hahn-Meitner-Institut Berlin Gmbh | Verfahren zum aufbringen einer zinksulfid-pufferschicht auf ein halbleitersubstrat mittels chemischer badabscheidung, insbesondere auf die absorberschicht einer chalkopyrit-dünnschicht-solarzelle |
US20070020400A1 (en) * | 2005-07-22 | 2007-01-25 | State of Oregon acting by and through the State Board of Higher Education on behalf of Oregon | Method and apparatus for chemical deposition |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4778478A (en) * | 1981-11-16 | 1988-10-18 | University Of Delaware | Method of making thin film photovoltaic solar cell |
US5405588A (en) * | 1994-07-11 | 1995-04-11 | The United States Of America As Represented By The United States Department Of Energy | Process for removing cadmium from scrap metal |
JP2915321B2 (ja) * | 1995-05-16 | 1999-07-05 | キヤノン株式会社 | 直列接続光起電力素子アレーの製造方法 |
DE19921515A1 (de) * | 1999-05-10 | 2000-11-30 | Ist Inst Fuer Solartechnologie | Dünnschichtsolarzelle auf der Basis der Ia/IIIb/VIa- Verbindungshalbleiter und Verfahren zu ihrer Herstellung |
DE102005025123B4 (de) * | 2005-05-30 | 2009-04-16 | Sulfurcell Solartechnik Gmbh | Verfahren und Einrichtung zur nasschemischen Behandlung von großflächigen Substraten, insbesondere zur Herstellung von Solarzellen |
-
2007
- 2007-10-22 DE DE102007052237A patent/DE102007052237A1/de not_active Withdrawn
-
2008
- 2008-10-21 EP EP08842554A patent/EP2212927B1/de not_active Not-in-force
- 2008-10-21 CN CN2008801230588A patent/CN101919069A/zh active Pending
- 2008-10-21 AT AT08842554T patent/ATE529898T1/de active
- 2008-10-21 KR KR1020107010929A patent/KR20100088139A/ko not_active Application Discontinuation
- 2008-10-21 WO PCT/EP2008/008877 patent/WO2009053021A2/de active Application Filing
- 2008-10-21 JP JP2010530320A patent/JP2011501447A/ja active Pending
- 2008-10-21 CA CA2703250A patent/CA2703250A1/en not_active Withdrawn
- 2008-10-21 AU AU2008315909A patent/AU2008315909A1/en not_active Abandoned
-
2010
- 2010-04-20 US US12/738,944 patent/US20110124149A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6211043B1 (en) * | 1997-09-05 | 2001-04-03 | Matsushita Battery Industrial Co., Ltd. | Method of manufacturing a compound semiconductor thin film on a substrate |
US20020043278A1 (en) * | 2000-10-18 | 2002-04-18 | Matsushita Electric Industrial Co., Ltd. | Solar cell |
US20060024960A1 (en) * | 2003-09-26 | 2006-02-02 | Meth Jeffrey S | Method for producing thin semiconductor films by deposition from solution |
WO2006018013A1 (de) * | 2004-08-18 | 2006-02-23 | Hahn-Meitner-Institut Berlin Gmbh | Verfahren zum aufbringen einer zinksulfid-pufferschicht auf ein halbleitersubstrat mittels chemischer badabscheidung, insbesondere auf die absorberschicht einer chalkopyrit-dünnschicht-solarzelle |
US20070020400A1 (en) * | 2005-07-22 | 2007-01-25 | State of Oregon acting by and through the State Board of Higher Education on behalf of Oregon | Method and apparatus for chemical deposition |
Non-Patent Citations (2)
Title |
---|
BAOSHENG SANG ET AL: "Investigation of chemical-bath-deposited ZnS buffer layers for Cu(InGa)Se2 thin film solar cells", CONFERENCE RECORD OF THE 29TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 20020519; 20020519 - 20020524 NEW YORK, NY : IEEE, US, vol. CONF. 29, 19 May 2002 (2002-05-19), pages 632 - 635, XP010666379, ISBN: 978-0-7803-7471-3 * |
JOHNSTON D A ET AL: "Chemical bath deposition of zinc sulfide based buffer layers using low toxicity materials", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 403-404, 1 February 2002 (2002-02-01), pages 102 - 106, XP004430335, ISSN: 0040-6090 * |
Also Published As
Publication number | Publication date |
---|---|
US20110124149A1 (en) | 2011-05-26 |
CA2703250A1 (en) | 2009-04-30 |
KR20100088139A (ko) | 2010-08-06 |
DE102007052237A1 (de) | 2009-04-30 |
EP2212927B1 (de) | 2011-10-19 |
ATE529898T1 (de) | 2011-11-15 |
AU2008315909A1 (en) | 2009-04-30 |
CN101919069A (zh) | 2010-12-15 |
WO2009053021A2 (de) | 2009-04-30 |
JP2011501447A (ja) | 2011-01-06 |
EP2212927A2 (de) | 2010-08-04 |
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