WO2009053021A3 - Verfahren und vorrichtung zur beschichtung eines trägers für dünnschichtsolarzellen - Google Patents

Verfahren und vorrichtung zur beschichtung eines trägers für dünnschichtsolarzellen Download PDF

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Publication number
WO2009053021A3
WO2009053021A3 PCT/EP2008/008877 EP2008008877W WO2009053021A3 WO 2009053021 A3 WO2009053021 A3 WO 2009053021A3 EP 2008008877 W EP2008008877 W EP 2008008877W WO 2009053021 A3 WO2009053021 A3 WO 2009053021A3
Authority
WO
WIPO (PCT)
Prior art keywords
carrier
coating
thin
solution
solar cells
Prior art date
Application number
PCT/EP2008/008877
Other languages
English (en)
French (fr)
Other versions
WO2009053021A2 (de
Inventor
Martin Schoch
Original Assignee
Schmid Gmbh & Co Geb
Martin Schoch
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schmid Gmbh & Co Geb, Martin Schoch filed Critical Schmid Gmbh & Co Geb
Priority to JP2010530320A priority Critical patent/JP2011501447A/ja
Priority to CN2008801230588A priority patent/CN101919069A/zh
Priority to AT08842554T priority patent/ATE529898T1/de
Priority to CA2703250A priority patent/CA2703250A1/en
Priority to AU2008315909A priority patent/AU2008315909A1/en
Priority to EP08842554A priority patent/EP2212927B1/de
Publication of WO2009053021A2 publication Critical patent/WO2009053021A2/de
Publication of WO2009053021A3 publication Critical patent/WO2009053021A3/de
Priority to US12/738,944 priority patent/US20110124149A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Coating Apparatus (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

Eine Anlage (11) ist dazu ausgebildet, einen folienartigen, langen Träger (18) für Dünnschichtsolarzellen auf dessen Absorberschicht mit Cadmiumsulfid zu beschichten. Dazu wird der Träger (18) durch eine Lösung (23) aus Cadmiumacetat, Ammoniak und Thioharnstoff kontinuierlich durchgeführt bzw. in ein Bad (22) mit der Lösung (23) getaucht. Durch eine breite und sehr lange und flache Wanne (24) mit der Lösung (23) wird die benötigte Menge für die Beschichtung gering gehalten, sodass der Verbrauch an Lösung (23) gering ist.
PCT/EP2008/008877 2007-10-22 2008-10-21 Verfahren und vorrichtung zur beschichtung eines trägers für dünnschichtsolarzellen WO2009053021A2 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2010530320A JP2011501447A (ja) 2007-10-22 2008-10-21 薄膜太陽電池のためのキャリアを被膜するための方法及び装置
CN2008801230588A CN101919069A (zh) 2007-10-22 2008-10-21 用于涂覆薄膜太阳能电池的载板的方法和装置
AT08842554T ATE529898T1 (de) 2007-10-22 2008-10-21 Verfahren und vorrichtung zur beschichtung eines trägers für dünnschichtsolarzellen
CA2703250A CA2703250A1 (en) 2007-10-22 2008-10-21 Method and device for coating a carrier for thin-film solar cells
AU2008315909A AU2008315909A1 (en) 2007-10-22 2008-10-21 Method and device for coating a carrier for thin-film solar cells
EP08842554A EP2212927B1 (de) 2007-10-22 2008-10-21 Verfahren und vorrichtung zur beschichtung eines trägers für dünnschichtsolarzellen
US12/738,944 US20110124149A1 (en) 2007-10-22 2010-04-20 Method and device for coating a carrier for thin-film solar cells

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007052237A DE102007052237A1 (de) 2007-10-22 2007-10-22 Verfahren und Vorrichtung zur Beschichtung eines Trägers für Dünnschichtsolarzellen
DE102007052237.3 2007-10-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/738,944 Continuation US20110124149A1 (en) 2007-10-22 2010-04-20 Method and device for coating a carrier for thin-film solar cells

Publications (2)

Publication Number Publication Date
WO2009053021A2 WO2009053021A2 (de) 2009-04-30
WO2009053021A3 true WO2009053021A3 (de) 2009-07-02

Family

ID=40490351

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/008877 WO2009053021A2 (de) 2007-10-22 2008-10-21 Verfahren und vorrichtung zur beschichtung eines trägers für dünnschichtsolarzellen

Country Status (10)

Country Link
US (1) US20110124149A1 (de)
EP (1) EP2212927B1 (de)
JP (1) JP2011501447A (de)
KR (1) KR20100088139A (de)
CN (1) CN101919069A (de)
AT (1) ATE529898T1 (de)
AU (1) AU2008315909A1 (de)
CA (1) CA2703250A1 (de)
DE (1) DE102007052237A1 (de)
WO (1) WO2009053021A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013008838A (ja) * 2011-06-24 2013-01-10 Fujifilm Corp 光電変換素子のバッファ層の製造方法および光電変換素子の製造方法
CN103008168B (zh) * 2012-12-12 2015-06-03 深圳先进技术研究院 沉积薄膜的装置和方法
CN107934345B (zh) * 2017-12-15 2024-03-19 深圳市华信一机械有限公司 一种密闭电池水浴内化成自动仓储系统及控制方法
CN108666248A (zh) * 2018-07-05 2018-10-16 北京铂阳顶荣光伏科技有限公司 一种膜层清洗装置、膜层清洗系统及清洗方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6211043B1 (en) * 1997-09-05 2001-04-03 Matsushita Battery Industrial Co., Ltd. Method of manufacturing a compound semiconductor thin film on a substrate
US20020043278A1 (en) * 2000-10-18 2002-04-18 Matsushita Electric Industrial Co., Ltd. Solar cell
US20060024960A1 (en) * 2003-09-26 2006-02-02 Meth Jeffrey S Method for producing thin semiconductor films by deposition from solution
WO2006018013A1 (de) * 2004-08-18 2006-02-23 Hahn-Meitner-Institut Berlin Gmbh Verfahren zum aufbringen einer zinksulfid-pufferschicht auf ein halbleitersubstrat mittels chemischer badabscheidung, insbesondere auf die absorberschicht einer chalkopyrit-dünnschicht-solarzelle
US20070020400A1 (en) * 2005-07-22 2007-01-25 State of Oregon acting by and through the State Board of Higher Education on behalf of Oregon Method and apparatus for chemical deposition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4778478A (en) * 1981-11-16 1988-10-18 University Of Delaware Method of making thin film photovoltaic solar cell
US5405588A (en) * 1994-07-11 1995-04-11 The United States Of America As Represented By The United States Department Of Energy Process for removing cadmium from scrap metal
JP2915321B2 (ja) * 1995-05-16 1999-07-05 キヤノン株式会社 直列接続光起電力素子アレーの製造方法
DE19921515A1 (de) * 1999-05-10 2000-11-30 Ist Inst Fuer Solartechnologie Dünnschichtsolarzelle auf der Basis der Ia/IIIb/VIa- Verbindungshalbleiter und Verfahren zu ihrer Herstellung
DE102005025123B4 (de) * 2005-05-30 2009-04-16 Sulfurcell Solartechnik Gmbh Verfahren und Einrichtung zur nasschemischen Behandlung von großflächigen Substraten, insbesondere zur Herstellung von Solarzellen

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6211043B1 (en) * 1997-09-05 2001-04-03 Matsushita Battery Industrial Co., Ltd. Method of manufacturing a compound semiconductor thin film on a substrate
US20020043278A1 (en) * 2000-10-18 2002-04-18 Matsushita Electric Industrial Co., Ltd. Solar cell
US20060024960A1 (en) * 2003-09-26 2006-02-02 Meth Jeffrey S Method for producing thin semiconductor films by deposition from solution
WO2006018013A1 (de) * 2004-08-18 2006-02-23 Hahn-Meitner-Institut Berlin Gmbh Verfahren zum aufbringen einer zinksulfid-pufferschicht auf ein halbleitersubstrat mittels chemischer badabscheidung, insbesondere auf die absorberschicht einer chalkopyrit-dünnschicht-solarzelle
US20070020400A1 (en) * 2005-07-22 2007-01-25 State of Oregon acting by and through the State Board of Higher Education on behalf of Oregon Method and apparatus for chemical deposition

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BAOSHENG SANG ET AL: "Investigation of chemical-bath-deposited ZnS buffer layers for Cu(InGa)Se2 thin film solar cells", CONFERENCE RECORD OF THE 29TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 20020519; 20020519 - 20020524 NEW YORK, NY : IEEE, US, vol. CONF. 29, 19 May 2002 (2002-05-19), pages 632 - 635, XP010666379, ISBN: 978-0-7803-7471-3 *
JOHNSTON D A ET AL: "Chemical bath deposition of zinc sulfide based buffer layers using low toxicity materials", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 403-404, 1 February 2002 (2002-02-01), pages 102 - 106, XP004430335, ISSN: 0040-6090 *

Also Published As

Publication number Publication date
EP2212927A2 (de) 2010-08-04
ATE529898T1 (de) 2011-11-15
AU2008315909A1 (en) 2009-04-30
DE102007052237A1 (de) 2009-04-30
WO2009053021A2 (de) 2009-04-30
JP2011501447A (ja) 2011-01-06
US20110124149A1 (en) 2011-05-26
EP2212927B1 (de) 2011-10-19
CN101919069A (zh) 2010-12-15
KR20100088139A (ko) 2010-08-06
CA2703250A1 (en) 2009-04-30

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