WO2009048025A1 - 不揮発性固体磁気メモリの記録方法及び不揮発性固体磁気メモリ - Google Patents

不揮発性固体磁気メモリの記録方法及び不揮発性固体磁気メモリ Download PDF

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Publication number
WO2009048025A1
WO2009048025A1 PCT/JP2008/068044 JP2008068044W WO2009048025A1 WO 2009048025 A1 WO2009048025 A1 WO 2009048025A1 JP 2008068044 W JP2008068044 W JP 2008068044W WO 2009048025 A1 WO2009048025 A1 WO 2009048025A1
Authority
WO
WIPO (PCT)
Prior art keywords
solid state
magnetic memory
nonvolatile solid
state magnetic
recording method
Prior art date
Application number
PCT/JP2008/068044
Other languages
English (en)
French (fr)
Inventor
Hideo Ohno
Fumihiro Matsukura
Daichi Chiba
Original Assignee
Japan Science And Technology Agency
Tohoku University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science And Technology Agency, Tohoku University filed Critical Japan Science And Technology Agency
Priority to JP2009536988A priority Critical patent/JP5611594B2/ja
Priority to US12/682,044 priority patent/US8310867B2/en
Publication of WO2009048025A1 publication Critical patent/WO2009048025A1/ja

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
  • Semiconductor Memories (AREA)

Abstract

　キャリア濃度の増減で磁気異方性が変化する磁性体を利用し、磁性体の磁化容易軸方向（磁化が向きやすい方向）を、キャリア濃度を増減させることで制御することにより、超低消費電力の不揮発性固体磁気メモリの記録方法及び不揮発性固体磁気メモリを提供する。 　磁性体からなる記録層（１１）を備える不揮発性固体磁気メモリの記録方法及び不揮発性固体磁気メモリであって、前記記録層（１１）のキャリア（電子・正孔) 濃度を増加または減少させる操作若しくはそれらを組み合わせた操作を行なうことによって、磁化を回転または反転させて記録動作を実行するようにした。
PCT/JP2008/068044 2007-10-11 2008-10-03 不揮発性固体磁気メモリの記録方法及び不揮発性固体磁気メモリ WO2009048025A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009536988A JP5611594B2 (ja) 2007-10-11 2008-10-03 不揮発性固体磁気メモリの記録方法及び不揮発性固体磁気メモリ
US12/682,044 US8310867B2 (en) 2007-10-11 2008-10-03 Nonvolatile solid state magnetic memory and recording method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-265747 2007-10-11
JP2007265747 2007-10-11

Publications (1)

Publication Number Publication Date
WO2009048025A1 true WO2009048025A1 (ja) 2009-04-16

Family

ID=40549171

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068044 WO2009048025A1 (ja) 2007-10-11 2008-10-03 不揮発性固体磁気メモリの記録方法及び不揮発性固体磁気メモリ

Country Status (3)

Country Link
US (1) US8310867B2 (ja)
JP (1) JP5611594B2 (ja)
WO (1) WO2009048025A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119537A (ja) * 2009-12-04 2011-06-16 Nec Corp メモリセル及び磁気ランダムアクセスメモリ
KR101251417B1 (ko) * 2010-07-16 2013-04-05 경상대학교산학협력단 자기 랜덤 액세스 메모리 장치 및 그것의 쓰기 방법
JP2013533646A (ja) * 2010-08-11 2013-08-22 グランディス インコーポレイテッド 二軸異方性を有する磁気トンネリング接合素子の提供方法及びシステム

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5677347B2 (ja) 2012-03-22 2015-02-25 株式会社東芝 磁気抵抗素子及び磁気メモリの書き込み方法

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JP2003007980A (ja) * 2001-06-20 2003-01-10 Sony Corp 磁気特性の変調方法および磁気機能装置
JP2003197920A (ja) * 2001-12-27 2003-07-11 Toshiba Corp 磁気スイッチング素子及び磁気メモリ
JP2004055866A (ja) * 2002-07-22 2004-02-19 Univ Tohoku 不揮発性固体磁気メモリ、不揮発性固体磁気メモリの保磁力制御方法、及び不揮発性固体磁気メモリの記録方法
WO2004023563A1 (ja) * 2002-09-05 2004-03-18 Japan Science And Technology Agency 電界効果トランジスタ
JP2005011907A (ja) * 2003-06-17 2005-01-13 Japan Science & Technology Agency 量子サイズ効果を用いたスピン注入磁化反転磁気抵抗素子
JP2006179891A (ja) * 2004-12-22 2006-07-06 Korea Advanced Inst Of Science & Technol 電圧制御磁化反転記録方式のｍｒａｍ素子及びそれを利用した情報の記録及び判読方法
JP2006286713A (ja) * 2005-03-31 2006-10-19 Osaka Univ 磁気抵抗素子および磁化反転方法

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JP3253696B2 (ja) * 1992-09-11 2002-02-04 株式会社東芝 磁気抵抗効果素子
EP0973169B1 (en) * 1998-05-13 2005-01-26 Sony Corporation Element exploiting magnetic material and addressing method therefor
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JP2001196661A (ja) * 1999-10-27 2001-07-19 Sony Corp 磁化制御方法、情報記憶方法、磁気機能素子および情報記憶素子
JP3884997B2 (ja) 2002-06-18 2007-02-21 キヤノン株式会社 電子透かし埋め込み装置及び電子透かし抽出装置並びにそれらの方法、コンピュータプログラム、記録媒体
JP4231506B2 (ja) * 2002-12-25 2009-03-04 パナソニック株式会社 磁性スイッチ素子とそれを用いた磁気メモリ
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007980A (ja) * 2001-06-20 2003-01-10 Sony Corp 磁気特性の変調方法および磁気機能装置
JP2003197920A (ja) * 2001-12-27 2003-07-11 Toshiba Corp 磁気スイッチング素子及び磁気メモリ
JP2004055866A (ja) * 2002-07-22 2004-02-19 Univ Tohoku 不揮発性固体磁気メモリ、不揮発性固体磁気メモリの保磁力制御方法、及び不揮発性固体磁気メモリの記録方法
WO2004023563A1 (ja) * 2002-09-05 2004-03-18 Japan Science And Technology Agency 電界効果トランジスタ
JP2005011907A (ja) * 2003-06-17 2005-01-13 Japan Science & Technology Agency 量子サイズ効果を用いたスピン注入磁化反転磁気抵抗素子
JP2006179891A (ja) * 2004-12-22 2006-07-06 Korea Advanced Inst Of Science & Technol 電圧制御磁化反転記録方式のｍｒａｍ素子及びそれを利用した情報の記録及び判読方法
JP2006286713A (ja) * 2005-03-31 2006-10-19 Osaka Univ 磁気抵抗素子および磁化反転方法

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CHIBA D.ET AL.: "Magnetization vector manipulation by electric fields", NATURE, vol. 455, 25 September 2008 (2008-09-25), pages 515 - 518 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119537A (ja) * 2009-12-04 2011-06-16 Nec Corp メモリセル及び磁気ランダムアクセスメモリ
KR101251417B1 (ko) * 2010-07-16 2013-04-05 경상대학교산학협력단 자기 랜덤 액세스 메모리 장치 및 그것의 쓰기 방법
JP2013533646A (ja) * 2010-08-11 2013-08-22 グランディス インコーポレイテッド 二軸異方性を有する磁気トンネリング接合素子の提供方法及びシステム

Also Published As

Publication number Publication date
JPWO2009048025A1 (ja) 2011-02-17
US20100246252A1 (en) 2010-09-30
US8310867B2 (en) 2012-11-13
JP5611594B2 (ja) 2014-10-22

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