WO2009036642A1 - Couche conductrice transparente de puce del a base de gan et procede de fabrication associe - Google Patents

Couche conductrice transparente de puce del a base de gan et procede de fabrication associe Download PDF

Info

Publication number
WO2009036642A1
WO2009036642A1 PCT/CN2007/070752 CN2007070752W WO2009036642A1 WO 2009036642 A1 WO2009036642 A1 WO 2009036642A1 CN 2007070752 W CN2007070752 W CN 2007070752W WO 2009036642 A1 WO2009036642 A1 WO 2009036642A1
Authority
WO
WIPO (PCT)
Prior art keywords
equal
transparent conductive
conductive layer
less
emitting diode
Prior art date
Application number
PCT/CN2007/070752
Other languages
English (en)
Chinese (zh)
Inventor
Philip Chan
Keny Tong
Raymond Wang
Original Assignee
Podium Photonics (Guangzhou) Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Podium Photonics (Guangzhou) Ltd. filed Critical Podium Photonics (Guangzhou) Ltd.
Priority to PCT/CN2007/070752 priority Critical patent/WO2009036642A1/fr
Priority to TW096141501A priority patent/TW200921930A/zh
Publication of WO2009036642A1 publication Critical patent/WO2009036642A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Definitions

  • the present invention relates to the field of semiconductor electronic material growth, and in particular to a gallium nitride-based light-emitting diode chip transparent conductive layer and a manufacturing method thereof. Background technique
  • the material of the transparent conductive layer for fabricating a gallium nitride-based light-emitting diode mainly includes N 1 /A U and indium tin oxide (ITO).
  • the transparent conductive layer made of Ni/Au has good electrical conductivity and the resistivity is 1 x 10- 5 ⁇ , but the visible light transmission characteristics are poor, and the light transmittance is only 79%.
  • the conductive ability of germanium can also meet the requirements of the industry.
  • the resistivity is 1 X 10 cm, and the visible light transmittance is greater than 95%.
  • the resistance of ITO to heat and H ions in the working environment of the light-emitting diode is poor, resulting in poor stability of the light-emitting diode. Summary of the invention
  • the main object of the present invention is to provide a transparent conductive layer of a gallium nitride-based light-emitting diode chip and a manufacturing method thereof, which can improve the light transmittance of the transparent conductive layer in the visible light range and improve the stability of the light-emitting diode chip.
  • a transparent conductive layer of a gallium nitride-based light-emitting diode chip which is doped with a third-group metal in ZnO and grown on a P-type gallium nitride layer, the transparent conductive layer having a thickness of 500 or more The angstrom is less than or equal to 5000 angstroms.
  • the third group metal doped with the ZnO thin film is Al, In or Ga.
  • the thickness of the transparent conductive layer is preferably 1500 ⁇ or more and 3800 ⁇ or less.
  • a method for fabricating the above transparent conductive layer of a gallium nitride based light emitting diode chip generally comprising (1) subjecting the epitaxial wafer of the gallium nitride-based light-emitting diode to chemical cleaning outside the furnace,
  • the pressure in the MOCVD reactor is greater than or equal to 5 Torr and less than or equal to 20 Torr, the temperature is greater than or equal to 400 ° C and less than or equal to 600 ° C, the rotational speed of the graphite disk is greater than or equal to 400 rpm, and argon is used as the carrier gas.
  • the molar ratio of oxygen to Zn is 100 400: 1
  • the molar ratio of Zn to the Group III metal is 3 to 16: 1:
  • the ZnO is doped with a transparent conductive layer of the third group metal on the surface of the P-type GaN layer, and the thickness of the transparent conductive layer grown is greater than or equal to 500 angstroms and less than or equal to 5000 angstroms.
  • the pressure in the MOCVD reactor is greater than or equal to 5 Torr and less than or equal to 20 Torr, the temperature is greater than or equal to 400 ° C and less than or equal to 600 ° C, the rotational speed of the graphite disk is greater than or equal to 400 rpm, and argon is used as the carrier gas.
  • the transparent conductive layer is subjected to post-growth annealing treatment, and the annealing treatment time is 2 min or more and 30 min or less.
  • the pressure of the reaction furnace in the step (2) is greater than or equal to 7 Torr and less than or equal to 14 Torr, the steps
  • step (2) The temperature is greater than or equal to 500 ° C and less than or equal to 650 ° C, the cleaning time in step (2) is greater than or equal to 5 min less than or equal to lOmin;
  • the pressure of the reaction furnace in the step (3) is greater than or equal to 7 Torr and less than or equal to 14 Torr, the steps
  • step (3) The temperature is greater than or equal to 475 ° C and less than or equal to 585 ° C, the flow rate of argon gas in step (3) is greater than or equal to 0.2 mol / min and less than or equal to 0.5 mol / min;
  • the pressure of the reaction furnace in the step (4) is greater than or equal to 7 Torr and less than or equal to 14 Torr, and the temperature in the step (4) is 475 ° C or higher and 585 ° C or less, and the argon gas in the step (4)
  • the flow rate is greater than or equal to 0.2 mol/min and less than or equal to 0.5 mol/min, and the annealing treatment time in step (4) is greater than or equal to 5 min and less than or equal to 10 min;
  • the ratio of mole fraction of oxygen to zinc in step (3) is 157 348:1; the ratio of mole fraction of zinc to the metal of the third group is 7-11:1;
  • the third group metal is Al, In or Ga.
  • the rotation speed of the graphite disk in steps (2), (3) and (4) is selected to be 400 rpm or more. /min and less than or equal to 900 rpm.
  • the invention adopts the method of metal organic chemical vapor deposition to grow ZnO doped with a transparent conductive layer of a Group III metal, and can also be used for molecular beam epitaxy, pulsed laser deposition, atomic layer epitaxy, sputtering or evaporation.
  • the method performs the growth of the transparent conductive layer.
  • the transparent conductive layer doped with Al, In or Ga of ZnO prepared by the invention has a resistivity of less than 7 ⁇ 10_ 4 ⁇ , and the transmittance in the visible range is greater than 95%,
  • the transparent conductive layer has excellent electrical conductivity and light transmittance.
  • ZnO and GaN have matched crystal structures and characteristics, they have strong stability to heat and H ions in the working environment of the light-emitting diode, so that ZnO is doped with Al, In or Ga as transparent conductive The stability of the layer of light-emitting diodes is high.
  • FIG. 1 is a flow chart showing the fabrication of a transparent conductive layer of a gallium nitride diode chip according to the present invention
  • FIG. 2 is a schematic view showing the structure of a ZnO doped A1 transparent conductive layer grown on a P-type layer of a GaN diode epitaxial wafer according to the present invention
  • 3 is a schematic view showing the structure of growing a ZnO-doped In transparent conductive layer on a P-type layer of a GaN-based epipolar plate epitaxial wafer according to the present invention
  • 4 is a schematic structural view of a ZnO-doped Ga transparent conductive layer grown on a P-type layer of a GaN-based light-emitting diode epitaxial wafer according to the present invention
  • FIG. 5 is a schematic view showing the structure of a chip processed by growing a ZnO-doped A1 transparent conductive layer on a P-type layer of a GaN-based light-emitting diode epitaxial wafer according to the present invention
  • FIG. 6 is a schematic view showing the structure of a chip processed by growing a ZnO-doped In transparent conductive layer on a P-type layer of a GaN-based light-emitting diode epitaxial wafer according to the present invention
  • FIG. 7 is a schematic view showing the structure of a chip processed by growing a ZnO doped Ga transparent conductive layer on a P-type layer of a GaN-based LED epitaxial wafer. detailed description
  • FIG. 1 is a flow chart for fabricating a transparent conductive layer of a gallium nitride-based light-emitting diode chip.
  • a method for fabricating a transparent conductive layer of a gallium nitride-based light-emitting diode chip according to the present invention generally includes the following steps:
  • the pressure in the reactor is 5 Torr
  • the temperature is 450 ° C
  • the speed of the graphite disk carrying the epitaxial wafer is 400 rpm.
  • the surface of the epitaxial wafer is cleaned by 3 mm to clean the surface of the epitaxial wafer and improve the surface energy in preparation for the next film growth.
  • the pressure is 5 Torr
  • the temperature is 400 ° C
  • the rotating speed of the graphite disk is 400 rpm
  • the argon gas flow rate is 0.2 mol/min.
  • the ratio is 100:1
  • the molar ratio of Zn to A1 is 3:1
  • the actual oxygen flow rate is 0.06mo/min
  • the flow rate of Zn is 0.6mmol/min
  • the flow rate of Al is 0.2mmol/min.
  • a ZnO-doped A1 transparent conductive layer is grown on the surface of the GaN layer, and has a thickness of 500 angstroms.
  • the method for manufacturing a transparent conductive layer of a gallium nitride-based light-emitting diode chip according to the present invention is generally
  • the epitaxial wafer of the GaN-based light-emitting diode is placed in an MOCVD reactor at a pressure of 9.2 Torr, a temperature of 530 ° C, and a rotational speed of the graphite disk carrying the epitaxial wafer of 750 rpm.
  • the surface of the epitaxial wafer is cleaned by 5 mm to clean the surface of the epitaxial wafer and improve the surface energy in preparation for the next film growth.
  • the pressure is 9.2 Torr
  • the temperature is 520 ° C
  • the rotation speed of the graphite disk is 750 rpm
  • the argon gas flow rate is 0.35 mol/min.
  • the ratio is 285.7: 1
  • the molar ratio of Zn to A1 is 8.75: 1
  • the actual oxygen flow is 0.05 mol/min
  • the flow rate of Zn is 0.175 mmol/min
  • the flow rate of Al is 0.02 mmol/min
  • a ZnO doped A1 transparent conductive layer is grown on the surface of the layer, and has a thickness of 2,500 angstroms.
  • the method for fabricating a transparent conductive layer of a gallium nitride-based light-emitting diode chip according to the present invention generally comprises the following steps:
  • the pressure in the reactor is 20 Torr
  • the temperature is 750 ° C
  • the speed of the graphite disk carrying the epitaxial wafer is 900 rpm.
  • the epitaxial wafer was surface-cleaned for 30 minutes to clean the surface of the epitaxial wafer and improve the surface energy in preparation for the next film growth.
  • the pressure is 20 Torr
  • the temperature is 600 ° C
  • the rotation speed of the graphite disk is 900 rpm
  • the argon gas flow rate is 0.5 mol/min
  • the molar amount of oxygen and Zn is introduced.
  • the ratio is 400: 1
  • the molar ratio of Zn to A1 is 16:1
  • the actual oxygen flow rate is 0.032mol/min
  • the flow rate of Zn is 0.08mmol/min
  • the flow rate of A1 is 0.005mmol/min, in the P type.
  • a ZnO doped A1 transparent conductive layer is grown on the surface of the GaN layer, and has a thickness of 5000 angstroms.
  • the pressure is 20 Torr
  • the temperature is 600 ° C
  • the speed of the graphite disk is 900 rpm
  • the argon flow rate is 0.5 mol/min
  • the ZnO is doped with the A1 transparent conductive layer.
  • the method for fabricating a transparent conductive layer of a gallium nitride-based light-emitting diode chip according to the present invention generally comprises the following steps:
  • the epitaxial wafer of the GaN-based light-emitting diode is placed in an MOCVD reactor, and the epitaxial wafer is placed under the conditions of a pressure of 7 Torr, a temperature of 500 ° C, and a rotation speed of the graphite disk of 800 rpm.
  • Surface cleaning 6mm clean the surface of the epitaxial wafer and improve the surface energy to prepare for the next film growth.
  • the pressure is 7 Torr
  • the temperature is 475 ° C
  • the rotating speed of the graphite disk is 800 rpm
  • the argon gas flow rate is 0.33 mol/min.
  • the ratio is 157: 1
  • the molar ratio of Zn to A1 is 7: 1
  • the actual oxygen flow rate is 0.0495mol/min
  • the flow rate of Zn is 0.315mmol/min
  • the flow rate of A1 is 0.045mmol/min.
  • a ZnO-doped A1 transparent conductive layer is grown on the surface of the GaN layer to a thickness of 1500 angstroms.
  • the pressure in the MOCVD reactor is 7 Torr
  • the temperature is 475 ° C
  • the graphite disk is rotated.
  • the ZnO doped A1 transparent conductive layer was post-growth treated for 6 mm at a speed of 800 rpm, and the argon gas flow rate was 0.33 mol/min.
  • the crystal lattice points were rearranged by heat to increase the ZnO doping.
  • the method for fabricating a transparent conductive layer of a gallium nitride-based light-emitting diode chip according to the present invention generally comprises the following steps:
  • the epitaxial wafer of the GaN-based light-emitting diode is placed in an MOCVD reactor, and the epitaxial wafer is placed under the conditions of a pressure of 14 Torr, a temperature of 650 ° C, and a rotation speed of the graphite disk of 700 rpm.
  • Surface cleaning lOmin the surface of the epitaxial wafer is cleaned and the surface energy is improved to prepare for the next film growth.
  • the pressure is 14 Torr
  • the temperature is 585 ° C
  • the rotating speed of the graphite disk is 700 rpm
  • the argon gas flow rate is 0.5 mol/min.
  • the ratio is 348:1
  • the molar ratio of Zn to A1 is 11:1
  • the actual oxygen flow rate is 0.02mol/min
  • the flow rate of Zn is 0.0575mmol/min
  • the flow rate of A1 is 0.005mmol/min.
  • a ZnO doped A1 transparent conductive layer is grown on the surface of the GaN layer, and has a thickness of 3,800 angstroms.
  • ZnO is doped with A1 transparent conductive layer under the conditions of MOCVD reactor pressure of 14 Torr, temperature of 585 °C, graphite disk rotation speed of 700 rpm, and argon gas flow rate of 0.5 mol/min.
  • the post-growth annealing treatment was carried out for 10 mm, and the crystal lattice points were rearranged by using heat to increase the stability and conductivity of the ZnO-doped A1 transparent conductive layer.
  • Fig. 2 is a structural schematic view showing the growth of a ZnO-doped A1 transparent conductive layer on a p-type layer of an epitaxial wafer of a GaN-based light emitting diode.
  • the epitaxial wafer is composed of a sapphire substrate 1, a low-temperature gallium nitride transition layer 2, an N-type GaN layer 3, an indium gallium nitride/gallium nitride light-emitting layer 4, and a P-type GaN layer 5, and ZnO is doped on the P-type GaN layer 5.
  • a hetero-A1 transparent conductive layer 6 6.
  • Example 6 The method for fabricating a transparent conductive layer of a gallium nitride-based light-emitting diode chip according to the present invention generally comprises the following steps:
  • the epitaxial wafer of the GaN-based light-emitting diode is placed in an MOCVD reactor, and the epitaxial wafer is placed under the conditions of a pressure of 20 Torr, a temperature of 750 ° C, and a rotation speed of the graphite disk of 900 rpm. Surface cleaning is performed for 30mm to clean the surface of the epitaxial wafer and improve the surface energy in preparation for the next film growth.
  • the pressure is 20 Torr
  • the temperature is 600 ° C
  • the rotation speed of the graphite disk is 900 rpm
  • the argon gas flow rate is 0.5 mol/min
  • the molar amount of oxygen and Zn is introduced.
  • the ratio is 400: 1.
  • the molar ratio of Zn to In is 16:1, the actual oxygen flow rate is 0.1 mol/min, the flow rate of Zn is 2.5 mmol/min, and the flow rate of In is 0.156 mmol/min.
  • a ZnO-doped In transparent conductive layer grown on the surface of the GaN layer having a thickness of 5000 angstroms.
  • the pressure is 20 Torr
  • the temperature is 600 ° C
  • the speed of the graphite disk is 900 rpm
  • the argon flow rate is 0.5 mol/min.
  • the post-growth annealing treatment was performed for 30 mm, and the crystal lattice points were rearranged by using heat to increase the stability and conductivity of the ZnO-doped In transparent conductive layer.
  • the method for fabricating a transparent conductive layer of a gallium nitride-based light-emitting diode chip according to the present invention generally comprises the following steps:
  • the epitaxial wafer of the GaN-based light-emitting diode is placed in an MOCVD reactor, and the epitaxial wafer is placed under the conditions of a pressure of 5 Torr in the reactor, a temperature of 450 ° C, and a rotation speed of the graphite disk of 400 rpm.
  • Surface cleaning is 3mm, the surface of the epitaxial wafer is cleaned and the surface energy is improved to prepare for the next film growth.
  • the pressure in the MOCVD reactor is 5 Torr, the temperature is 400 ° C, and the rotation of the graphite disc
  • the flow rate of oxygen to Zn is 100:1, the flow ratio of Zn to In is 3:1, and the actual oxygen flow rate is 0.018 mol.
  • the flow rate of oxygen to Zn is 100:1. /min, the flow rate of Zn is 0.18 mmol/min, the flow rate of In is 0.06 mmol/min, and a ZnO-doped In transparent conductive layer is grown on the surface of the P-type GaN layer, and the thickness thereof is 500 ⁇ .
  • the pressure is 5 Torr
  • the temperature is 400 ° C
  • the rotating speed of the graphite disk is 400 rpm
  • the argon flow rate is 0.2 mol/min.
  • the method for fabricating a transparent conductive layer of a gallium nitride-based light-emitting diode chip according to the present invention generally comprises the following steps:
  • the epitaxial wafer of the GaN-based light-emitting diode is placed in an MOCVD reactor, and the epitaxial wafer is placed under the conditions of a pressure of 7 Torr, a temperature of 500 ° C, and a rotation speed of the graphite disk of 600 rpm. Surface cleaning 5mm, the surface of the epitaxial wafer is cleaned and the surface energy is improved to prepare for the next film growth.
  • the pressure is 7 Torr
  • the temperature is 475 ° C
  • the rotation speed of the graphite disk is 600 rpm
  • the argon gas flow rate is 0.27 mol/min.
  • the ratio is 157: 1
  • the molar ratio of Zn to In is 7: 1
  • the actual oxygen flow rate is 0.0493 mol/min
  • the flow rate of Zn is 0.314 mmol/min
  • the flow rate of In is 0.0448 mmol/min.
  • a ZnO-doped In transparent conductive layer grown on the surface of the GaN layer, having a thickness of 1500 angstroms.
  • the pressure is 7 Torr
  • the temperature is 475 ° C
  • the speed of the graphite disk is 600 rpm
  • the argon flow rate is 0.27 mol/min.
  • the post-growth annealing treatment was performed for 5 mm, and the crystal lattice points were rearranged by using heat to increase the stability and conductivity of the ZnO-doped In transparent conductive layer.
  • the method for fabricating a transparent conductive layer of a gallium nitride-based light-emitting diode chip according to the present invention comprises the following steps:
  • the epitaxial wafer of the GaN-based light-emitting diode is placed in an MOCVD reactor, and the epitaxial wafer is placed under the conditions of a pressure of 14 Torr, a temperature of 650 ° C, and a rotation speed of the graphite disk of 800 rpm.
  • Surface cleaning 10mm the surface of the epitaxial wafer is cleaned and the surface energy is improved to prepare for the next film growth.
  • the pressure is 14 Torr
  • the temperature is 585 ° C
  • the rotating speed of the graphite disk is 800 rpm
  • the argon flow rate is 0.375 mol/min.
  • the post-growth annealing treatment was carried out for 10 mm, and the crystal lattice points were rearranged by using heat to increase the stability and conductivity of the ZnO-doped In transparent conductive layer.
  • the method for fabricating a transparent conductive layer of a gallium nitride-based light-emitting diode chip according to the present invention generally comprises the following steps:
  • the epitaxial wafer of the GaN-based light-emitting diode is placed in an MOCVD reactor, and the epitaxial wafer is subjected to a pressure of 11 Torr at a reaction furnace, a temperature of 600 ° C, and a rotation speed of the graphite disk of 800 rpm. The surface is cleaned by 8mm to clean the surface of the epitaxial wafer and improve the surface energy in preparation for the next film growth.
  • the pressure is 11 Torr
  • the temperature is 575 ° C
  • the rotating speed of the graphite disk is 800 rpm
  • the argon gas flow rate is 0.4 mol/min
  • the molar amount of oxygen and Zn is introduced.
  • the ratio is 270: 1
  • the molar ratio of Zn to In is 9: 1
  • the actual oxygen flow rate is 0.081mol/min
  • the flow rate of Zn is 0.3mmol/min
  • the flow rate of In is 0.033mmol/min.
  • a ZnO-doped In transparent conductive layer is grown on the surface of the GaN layer, and has a thickness of 3000 angstroms.
  • the pressure is 11 Torr
  • the temperature is 575 ° C
  • the rotating speed of the graphite disk is 800 rpm
  • the argon gas flow rate is 0.4 mol/min.
  • Fig. 3 is a structural schematic view showing the growth of a ZnO doped In transparent conductive layer on a p-type layer of an epitaxial wafer of a GaN-based light emitting diode.
  • the epitaxial wafer is composed of a sapphire substrate 1, a low-temperature gallium nitride transition layer 2, an N-type GaN layer 3, an indium gallium nitride/gallium nitride light-emitting layer 4, and a P-type GaN layer 5, and ZnO is doped on the P-type GaN layer 5.
  • the method for fabricating a transparent conductive layer of a gallium nitride-based light-emitting diode chip according to the present invention generally comprises the following steps:
  • the epitaxial wafer of the GaN-based light-emitting diode is placed in an MOCVD reactor, and the epitaxial wafer is placed under the conditions of a pressure of 5 Torr in the reactor, a temperature of 450 ° C, and a rotation speed of the graphite disk of 400 rpm.
  • Surface cleaning is 3mm, the surface of the epitaxial wafer is cleaned and the surface energy is improved to prepare for the next film growth.
  • the pressure is 5 Torr
  • the temperature is 400 ° C
  • the rotating speed of the graphite disk is 400 rpm
  • the argon gas flow rate is 0.2 mol/min
  • the molar amount of oxygen and Zn is introduced.
  • the ratio is 100: 1
  • the molar ratio of Zn to Ga is 3: 1
  • the actual oxygen flow rate is 0.03 mol/min
  • the flow rate of Zn is 0.3 mmol/min
  • the flow rate of Ga is 0.1 mmol/min.
  • P A ZnO-doped Ga transparent conductive layer is grown on the surface of the GaN layer, and has a thickness of 500 angstroms.
  • the method for fabricating a transparent conductive layer of a gallium nitride-based light-emitting diode chip according to the present invention generally comprises the following steps:
  • the epitaxial wafer of the GaN-based light-emitting diode is placed in an MOCVD reactor, and the epitaxial wafer is placed under the conditions of a pressure of 20 Torr, a temperature of 750 ° C, and a rotation speed of the graphite disk of 900 rpm. Surface cleaning is performed for 30mm to clean the surface of the epitaxial wafer and improve the surface energy in preparation for the next film growth.
  • the pressure is 20 Torr
  • the temperature is 600 ° C
  • the rotation speed of the graphite disk is 900 rpm
  • the argon gas flow rate is 0.5 mol/min.
  • the ratio is 400:1
  • the molar ratio of Zn to Ga is 16:1
  • the actual oxygen flow rate is 0.054 mol/min
  • the flow rate of Zn is 0.135 mmol/min
  • the flow rate of Ga is 0.0084 mmol/min.
  • a ZnO-doped Ga transparent conductive layer is grown on the surface of the GaN layer, and has a thickness of 5000 angstroms.
  • the method for fabricating a transparent conductive layer of a gallium nitride-based light-emitting diode chip according to the present invention generally comprises the following steps: (1) subjecting the epitaxial wafer of the GaN-based light-emitting diode to chemical cleaning outside the furnace,
  • the epitaxial wafer of the GaN-based light-emitting diode is placed in an MOCVD reactor, and the epitaxial wafer is placed under the conditions of a pressure of 7 Torr, a temperature of 500 ° C, and a rotation speed of the graphite disk of 600 rpm. Surface cleaning 5mm, the surface of the epitaxial wafer is cleaned and the surface energy is improved to prepare for the next film growth.
  • the pressure is 7 Torr
  • the temperature is 475 ° C
  • the rotating speed of the graphite disk is 600 rpm
  • the argon gas flow rate is 0.4 mol/min.
  • the ratio is 157: 1
  • the molar ratio of Zn to Ga is 7: 1
  • the actual oxygen flow rate is 0.05 mol/min
  • the flow rate of Zn is 0.318 mmol/min
  • the flow rate of Ga is 0.0454 mmol/min.
  • a ⁇ -doped Ga transparent conductive layer is grown on the surface of the GaN layer, and has a thickness of 1500 angstroms.
  • the pressure is 7 Torr
  • the temperature is 475 ° C
  • the rotating speed of the graphite disk is 600 rpm
  • the argon gas flow rate is 0.4 mol/min
  • the ZnO doped Ga transparent conductive layer is used.
  • the crystal lattice points were rearranged by using heat to increase the stability and conductivity of the ZnO-doped Ga transparent conductive layer.
  • the method for fabricating a transparent conductive layer of a gallium nitride-based light-emitting diode chip according to the present invention generally comprises the following steps:
  • the epitaxial wafer of the GaN-based light-emitting diode is placed in an MOCVD reactor, and the epitaxial wafer is placed under the conditions of a pressure of 14 Torr, a temperature of 650 ° C, and a rotational speed of the graphite disk of 750 rpm.
  • Surface cleaning 10mm the surface of the epitaxial wafer is cleaned and the surface energy is improved to prepare for the next film growth.
  • the pressure is 14 Torr
  • the temperature is 585 ° C
  • the speed of the graphite disk is 750 rpm
  • the argon flow rate is 0.375 mol/min.
  • the ratio is 348: 1
  • the molar ratio of Zn to Ga is 11: 1
  • the actual oxygen flow The amount is 0.086 mmol/min
  • the flow rate of ⁇ is 0.247 mmol/min
  • the flow rate of Ga is 0.0224 mmol/min.
  • the transparent conductive layer of ZnO-doped Ga is grown on the surface of the P-type GaN layer, and the thickness thereof is 3,800 angstroms.
  • the method for fabricating a transparent conductive layer of a gallium nitride-based light-emitting diode chip according to the present invention generally comprises the following steps:
  • the epitaxial wafer of the GaN-based light-emitting diode is placed in an MOCVD reactor, and the epitaxial wafer is placed under the conditions of a pressure of 10 Torr, a temperature of 600 ° C, and a rotation speed of the graphite disk of 800 rpm. Surface cleaning is 7mm, the surface of the epitaxial wafer is cleaned and the surface energy is improved to prepare for the next film growth.
  • the pressure is 10 Torr
  • the temperature is 570 ° C
  • the rotating speed of the graphite disk is 800 rpm
  • the argon gas flow rate is 0.3 mol/min.
  • the ratio is 123:1
  • the molar ratio of Zn to Ga is 9:1
  • the actual oxygen flow rate is 0.024mol/min
  • the flow rate of Zn is 0.195mmol/min
  • the flow rate of Ga is 0.0217mmol/min.
  • a ZnO-doped Ga transparent conductive layer is grown on the surface of the GaN layer, and has a thickness of 2,500 angstroms.
  • the epitaxial wafer is composed of a sapphire substrate 1, a low-temperature gallium nitride transition layer 2, an N-type GaN layer 3, an indium gallium nitride/gallium nitride light-emitting layer 4, and a P-type GaN layer 5, and ZnO is doped on the P-type GaN layer 5.
  • a hetero-Ga transparent conductive layer 8 8.
  • the present invention employs a metal organic vapor phase deposition method for carrying out the growth of a transparent conductive layer, and at the same time, the growth of the transparent conductive layer of the present invention can be carried out by molecular beam epitaxy, pulsed laser deposition, atomic layer epitaxy, sputtering or evaporation.
  • the transparent conductive layer of the present invention is grown on the p-type layer of the epitaxial wafer of the GaN-based light-emitting diode, it is processed into a chip.
  • the ZnO-doped A1 transparent conductive layer 6 is connected to the P electrode 9 in order to form a chip which is processed after the ZnO-doped A1 transparent conductive layer is grown on the P-type layer of the GaN-based light-emitting diode epitaxial wafer.
  • the GaN layer is in contact with the N electrode 10.
  • Figure 6 and Figure 7 are schematic diagrams of a transparent conductive layer with ZnO doped In and ZnO doped Ga.
  • Table 1 shows the comparison of the light intensity and the forward voltage of a chip having a transparent conductive layer as a material of the present invention and a chip of Ni/Au and ITO as a transparent conductive layer.
  • Table 1 The data shown in Table 1 is the result of testing with the LED photoelectric characteristics meter using the same standard.
  • the chip size is 12 mil x 12 mil
  • the light intensity of the present invention using ZnO doped Al, ZnO doped In or ZnO doped Ga as the transparent conductive layer is respectively under the condition of a current of 20 mA. 60mcd, 58mcd, 56mcd, light with ITO as the transparent conductive layer Strong increased by 11%, 7.4%, 3.7%.
  • the forward voltage of the transparent conductive layer using ZnO doped Al, ZnO doped In or ZnO as the transparent conductive layer is similar to the forward voltage of Ni/Au and ITO as the transparent conductive layer, and both are smaller than the industry requirement of 3.5V. .
  • the reliability test was carried out on the chip made of ZnO doped A1 transparent conductive layer.
  • the test method was bare crystal test.
  • the light intensity was 119mcd before the test. After the chip was operated continuously for 20 hours under the condition of 20mA, the light intensity was 114mcd, light decay is 4.2%.
  • the reliability of the chip made of ZnO doped In transparent conductive layer was tested.
  • the intensity of the chip was llOmcd before the test. After the chip was operated continuously for 20 hours under the condition of 20 mA, the light intensity was 104 mcd and the light decay was 5.4%.
  • the reliability of the chip made of ZnO doped Ga transparent conductive layer was tested.
  • the light intensity was 102mcd before the test. After the chip was operated continuously for 20 hours under the condition of 20mA, the light intensity was 96mcd and the light decay was 5.9%.
  • the transparent conductive layer of ZnO doped Al, In or Ga of the present invention has good light transmittance, and the chip made of the transparent conductive layer of Al, In or Ga doped with the ZnO is 1000.
  • the light decay after hours is less than 10%, indicating that the stability of the light-emitting diode in which ZnO is doped with a Group III metal as the transparent conductive layer is high.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne une couche conductrice transparente (6) de puce DEL à base de GaN, comprenant une couche conductrice transparente ZnO dopée à Al, In ou Ga (6) formée sur une couche GaN de type P (5). L'invention concerne également un procédé de fabrication associé, consistant : (A) à rincer chimiquement une plaquette épitaxiale de la DEL à base de GaN en dehors d'un four ; (B) à effectuer un rinçage à haute température dans un four à réaction par dépôt chimique en phase vapeur métallo-organique ; (C) à utiliser un gaz Ar comme gaz porteur, à introduire de l'oxygène, Zn et un métal Al, In ou Ga, à réguler le rapport molaire oxygène/Zn à 100~400:1, à réguler le rapport molaire Zn/métal à 3~16:1, à faire croître la couche conductrice transparente (6) sur la couche GaN de type P (5) ; et (D) à recuire la couche conductrice transparente (6).
PCT/CN2007/070752 2007-09-21 2007-09-21 Couche conductrice transparente de puce del a base de gan et procede de fabrication associe WO2009036642A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/CN2007/070752 WO2009036642A1 (fr) 2007-09-21 2007-09-21 Couche conductrice transparente de puce del a base de gan et procede de fabrication associe
TW096141501A TW200921930A (en) 2007-09-21 2007-11-02 Transparent conductive layer of GaN based led chip and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2007/070752 WO2009036642A1 (fr) 2007-09-21 2007-09-21 Couche conductrice transparente de puce del a base de gan et procede de fabrication associe

Publications (1)

Publication Number Publication Date
WO2009036642A1 true WO2009036642A1 (fr) 2009-03-26

Family

ID=40467497

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2007/070752 WO2009036642A1 (fr) 2007-09-21 2007-09-21 Couche conductrice transparente de puce del a base de gan et procede de fabrication associe

Country Status (2)

Country Link
TW (1) TW200921930A (fr)
WO (1) WO2009036642A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5889295A (en) * 1996-02-26 1999-03-30 Kabushiki Kaisha Toshiba Semiconductor device
CN1510765A (zh) * 2002-12-26 2004-07-07 炬鑫科技股份有限公司 氮化镓基ⅲ-ⅴ族化合物半导体led的发光装置及其制造方法
CN1612300A (zh) * 2003-10-27 2005-05-04 三星电子株式会社 GaN基III－V主族化合物半导体器件和p型电极
WO2006011672A1 (fr) * 2004-07-29 2006-02-02 Showa Denko K.K. Électrode positive pour dispositif à semi-conducteur émettant de la lumière

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5889295A (en) * 1996-02-26 1999-03-30 Kabushiki Kaisha Toshiba Semiconductor device
CN1510765A (zh) * 2002-12-26 2004-07-07 炬鑫科技股份有限公司 氮化镓基ⅲ-ⅴ族化合物半导体led的发光装置及其制造方法
CN1612300A (zh) * 2003-10-27 2005-05-04 三星电子株式会社 GaN基III－V主族化合物半导体器件和p型电极
WO2006011672A1 (fr) * 2004-07-29 2006-02-02 Showa Denko K.K. Électrode positive pour dispositif à semi-conducteur émettant de la lumière

Also Published As

Publication number Publication date
TW200921930A (en) 2009-05-16

Similar Documents

Publication Publication Date Title
KR101410598B1 (ko) 적층체, 그 제조 방법, 및 그것을 이용한 기능 소자
CN103022295B (zh) 一种生长在Si衬底上的AlN薄膜及其制备方法和应用
JP5397369B2 (ja) 半導体発光素子、該半導体発光素子の製造方法および該半導体発光素子を用いたランプ
JP2001210864A (ja) 発光ダイオードおよび半導体レーザー
CN104952990A (zh) 一种发光二极管外延片及其制作方法
JP5520496B2 (ja) 太陽電池の製造方法
TW201027801A (en) Thin light-emitting devices and fabrication methods
CN101331617A (zh) 氮化镓系化合物半导体发光元件
JP2008047864A (ja) 窒化物系半導体発光素子の製造方法
JP2008235877A (ja) 太陽電池及びその製造方法
KR101257572B1 (ko) 반도체 발광 소자
CN103077963A (zh) 一种欧姆接触电极、其制备方法及包含该欧姆接触电极的半导体元件
CN101381891B (zh) 一种制备MgZnO单晶薄膜的方法
CN107293622A (zh) 一种发光二极管的外延片及其制备方法
CN104465918B (zh) 一种发光二极管外延片及其制备方法
JP2013528956A (ja) 光電池デバイスにおける使用に適する改良されたｉｉｂ／ｖａ族半導体
CN101710605B (zh) 一种基于n-ZnO/n-GaN异质nN结的紫外发光二极管及其制备方法
KR101030823B1 (ko) 투명 박막, 이를 포함하는 발광 소자와 이들의 제조 방법
Ginley et al. Next-generation transparent conducting oxides for photovoltaic cells: an overview
KR101201641B1 (ko) 투명 박막, 이를 포함하는 발광 소자와 이들의 제조 방법
CN116845152A (zh) 一种led芯片制备方法及led芯片
CN105720150A (zh) 一种氧化锌基透明电极结构GaN基LED芯片及其制作方法
CN107706278B (zh) 一种紫外发光二极管的透明电极制备方法及其应用
TWI315106B (en) Gallium nitride-based compound semiconductor light-emitting device
CN203026510U (zh) 一种欧姆接触电极及包含该欧姆接触电极的半导体元件

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07816943

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07816943

Country of ref document: EP

Kind code of ref document: A1