WO2009028706A1 - 縦型有機トランジスタ、その製造方法及び発光素子 - Google Patents

縦型有機トランジスタ、その製造方法及び発光素子 Download PDF

Info

Publication number
WO2009028706A1
WO2009028706A1 PCT/JP2008/065666 JP2008065666W WO2009028706A1 WO 2009028706 A1 WO2009028706 A1 WO 2009028706A1 JP 2008065666 W JP2008065666 W JP 2008065666W WO 2009028706 A1 WO2009028706 A1 WO 2009028706A1
Authority
WO
WIPO (PCT)
Prior art keywords
organic transistor
vertical organic
light emitting
emitting element
manufacturing
Prior art date
Application number
PCT/JP2008/065666
Other languages
English (en)
French (fr)
Inventor
Shinya Fujimoto
Hiroki Maeda
Yoshiaki Tsuruoka
Original Assignee
Dai Nippon Printing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008215068A external-priority patent/JP5347377B2/ja
Application filed by Dai Nippon Printing Co., Ltd. filed Critical Dai Nippon Printing Co., Ltd.
Priority to GB1003387.6A priority Critical patent/GB2465122B/en
Priority to US12/675,830 priority patent/US8564130B2/en
Publication of WO2009028706A1 publication Critical patent/WO2009028706A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]

Landscapes

  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)

Abstract

　本発明は、電流変調が容易で、製造コストを抑えた縦型有機トランジスタ、及びその製造方法を提供する。本発明は、縦型有機トランジスタであって、上部電極と、下部電極と、両電極間に設けられた有機半導体と、該有機半導体内に設けられた中間電極とを備えてなり、前記中間電極が、連続する絶縁性金属化合物と、該絶縁性金属化合物内に分布する粒状金属とを含んでなる層状連続体であるものである。
PCT/JP2008/065666 2007-08-31 2008-09-01 縦型有機トランジスタ、その製造方法及び発光素子 WO2009028706A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB1003387.6A GB2465122B (en) 2007-08-31 2008-09-01 Laminated organic transistor, method for manufacturing the laminated organic transistor, and light emitting element
US12/675,830 US8564130B2 (en) 2007-08-31 2008-09-01 Vertical organic transistor, method for manufacturing the vertical organic transistor, and light emitting element

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007226664 2007-08-31
JP2007-226664 2007-08-31
JP2008215068A JP5347377B2 (ja) 2007-08-31 2008-08-25 縦型有機トランジスタ、その製造方法及び発光素子
JP2008-215068 2008-08-25

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/506,516 Continuation US8357257B2 (en) 2007-09-21 2009-07-21 Magnetic sheet and production method thereof

Publications (1)

Publication Number Publication Date
WO2009028706A1 true WO2009028706A1 (ja) 2009-03-05

Family

ID=40387409

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065666 WO2009028706A1 (ja) 2007-08-31 2008-09-01 縦型有機トランジスタ、その製造方法及び発光素子

Country Status (1)

Country Link
WO (1) WO2009028706A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120146011A1 (en) * 2009-09-04 2012-06-14 Ken-Ichi Nakayama Current-Amplifying Transistor Device and Current-Amplifying, Light-Emitting Transistor Device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005293980A (ja) * 2004-03-31 2005-10-20 Junji Kido 発光トランジスタ
JP2006191044A (ja) * 2005-01-05 2006-07-20 Samsung Electronics Co Ltd 垂直型有機薄膜トランジスタ、垂直型有機発光トランジスタおよびディスプレイ素子
JP2006260206A (ja) * 2005-03-17 2006-09-28 Fujitsu Ltd 検索装置および検索プログラム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005293980A (ja) * 2004-03-31 2005-10-20 Junji Kido 発光トランジスタ
JP2006191044A (ja) * 2005-01-05 2006-07-20 Samsung Electronics Co Ltd 垂直型有機薄膜トランジスタ、垂直型有機発光トランジスタおよびディスプレイ素子
JP2006260206A (ja) * 2005-03-17 2006-09-28 Fujitsu Ltd 検索装置および検索プログラム

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120146011A1 (en) * 2009-09-04 2012-06-14 Ken-Ichi Nakayama Current-Amplifying Transistor Device and Current-Amplifying, Light-Emitting Transistor Device
US8927972B2 (en) * 2009-09-04 2015-01-06 Dainichiseika Color & Chemicals Mfg. Co., Ltd. Current-amplifying transistor device and current-amplifying, light-emitting transistor device

Similar Documents

Publication Publication Date Title
TW200642123A (en) An OLED device
WO2007082673A3 (de) Organische optoelektronisches bauelement
WO2010110553A3 (en) Novel organic electroluminescent compounds and organic electroluminescent device using the same
WO2009134095A3 (ko) 발광 소자 및 그 제조방법
TW200633585A (en) Semiconductor device and method for manufacturing the same
EP4220743A3 (en) Light emitting diode
WO2010062065A3 (ko) 새로운 함질소 헤테로환 화합물 및 이를 이용한 유기전자소자
TW200419810A (en) Structure of thin-film transistor, and the manufacturing method thereof
WO2011081456A3 (ko) 발열체 및 이의 제조방법
IL188076A0 (en) Electrode for an electrical component, component with the electrode, and manufacturing method for the component
WO2016200070A3 (ko) 유기전기 소자용 화합물, 이를 이용한 유기전기소자 및 그 전자 장치
WO2006056964A3 (en) Electrochemical energy source, electronic module, electronic device, and method for manufacturing of said energy source
WO2009145501A3 (ko) 발광 소자 및 그 제조방법
WO2010056070A3 (ko) 저전압 구동 유기발광소자 및 이의 제조 방법
GB2464586B (en) Top emission type organic electroluminescent device and method of fabricating the same
TW200731850A (en) Organic light-emitting transistor element and method for manufacturing the same
WO2011025631A3 (en) Semiconductor crystal based radiation detector and method of producing the same
WO2009120044A3 (ko) 발광소자 및 그 제조방법
WO2010114253A3 (en) Novel organic electroluminescent compounds and organic electroluminescent device using the same
TW200701508A (en) A semiconductor light-emitting device
WO2011157385A3 (en) Organic light emitting device
TW200721387A (en) Lateral phase change memory with spacer electrodes and method of manufacturing the same
WO2009131401A3 (ko) 발광 소자 및 그 제조방법
WO2010107249A3 (ko) 유기발광소자 및 이의 제조방법
GB2465122B (en) Laminated organic transistor, method for manufacturing the laminated organic transistor, and light emitting element

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08828882

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 1003387

Country of ref document: GB

Kind code of ref document: A

Free format text: PCT FILING DATE = 20080901

WWE Wipo information: entry into national phase

Ref document number: 1003387.6

Country of ref document: GB

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 12675830

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 08828882

Country of ref document: EP

Kind code of ref document: A1