WO2009028642A1 - 高密度ｉｉ－ｖｉ族化合物半導体成型体及びその製造方法 - Google Patents

高密度ｉｉ－ｖｉ族化合物半導体成型体及びその製造方法 Download PDF

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Publication number
WO2009028642A1
WO2009028642A1 PCT/JP2008/065493 JP2008065493W WO2009028642A1 WO 2009028642 A1 WO2009028642 A1 WO 2009028642A1 JP 2008065493 W JP2008065493 W JP 2008065493W WO 2009028642 A1 WO2009028642 A1 WO 2009028642A1
Authority
WO
WIPO (PCT)
Prior art keywords
compound semiconductor
shock
manufacturing
semiconductor compact
compact
Prior art date
Application number
PCT/JP2008/065493
Other languages
English (en)
French (fr)
Inventor
Masahiro Fujita
Akio Kira
Moto Shirahase
Yoshihisa Tsuji
Hideharu Iwasaki
Original Assignee
Kuraray Luminas Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kuraray Luminas Co., Ltd. filed Critical Kuraray Luminas Co., Ltd.
Priority to JP2009530192A priority Critical patent/JPWO2009028642A1/ja
Publication of WO2009028642A1 publication Critical patent/WO2009028642A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/02—Compacting only
    • B22F3/08—Compacting only by explosive forces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/02—Compacting only
    • B22F3/087—Compacting only using high energy impulses, e.g. magnetic field impulses

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Luminescent Compositions (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Powder Metallurgy (AREA)

Abstract

　本発明は、結晶子サイズが２５０Å以下で、相対密度が０．８５以上のＩＩ－ＶＩ族化合物半導体成型体、並びに、（Ａ）凸状の突起を有する台座と、（Ｂ）凸状の突起に嵌着されて試料装填部を形成する台座補助具と、（Ｃ）衝撃受部材とを含み、（Ａ）台座、（Ｂ）台座補助具および（Ｃ）衝撃受部材は着脱自在に構成された衝撃ターゲットカプセルに試料を装填し、衝撃波を用いて成型することを特徴とするＩＩ－ＶＩ族化合物半導体成型体の製造方法を提供する。本発明はまた、試料装填部を有する衝撃ターゲットカプセルを用意し、ＩＩ－ＶＩ族化合物半導体を該試料装填部に装填し、該衝撃ターゲットカプセルに１５ＧＰａ以上の衝撃波を与えることを特徴とするＩＩ－ＶＩ族化合物半導体成型体の製造方法をも提供する。
PCT/JP2008/065493 2007-08-31 2008-08-29 高密度ｉｉ－ｖｉ族化合物半導体成型体及びその製造方法 WO2009028642A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009530192A JPWO2009028642A1 (ja) 2007-08-31 2008-08-29 高密度ｉｉ−ｖｉ族化合物半導体成型体及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPPCT/JP2007/066994 2007-08-31
PCT/JP2007/066994 WO2009028087A1 (ja) 2007-08-31 2007-08-31 高密度ｉｉ－ｖｉ族化合物半導体成型体及びその製造方法

Publications (1)

Publication Number Publication Date
WO2009028642A1 true WO2009028642A1 (ja) 2009-03-05

Family

ID=40386831

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/JP2007/066994 WO2009028087A1 (ja) 2007-08-31 2007-08-31 高密度ｉｉ－ｖｉ族化合物半導体成型体及びその製造方法
PCT/JP2008/065493 WO2009028642A1 (ja) 2007-08-31 2008-08-29 高密度ｉｉ－ｖｉ族化合物半導体成型体及びその製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/066994 WO2009028087A1 (ja) 2007-08-31 2007-08-31 高密度ｉｉ－ｖｉ族化合物半導体成型体及びその製造方法

Country Status (3)

Country Link
JP (1) JPWO2009028642A1 (ja)
TW (1) TW200918693A (ja)
WO (2) WO2009028087A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011068551A (ja) * 2009-08-22 2011-04-07 Kumamoto Univ 無機化合物バルク体の製造方法及び無機化合物バルク体

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5750060B2 (ja) * 2012-01-18 2015-07-15 三井金属鉱業株式会社 セラミックス円筒形スパッタリングターゲット材およびその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS463378B1 (ja) * 1965-06-16 1971-01-27
JPS5922648A (ja) * 1982-06-25 1984-02-04 Agency Of Ind Science & Technol 凝縮系物質の衝撃圧縮方法及び装置
JPH0259463A (ja) * 1988-08-24 1990-02-28 Matsushita Electric Ind Co Ltd ＺｎＳ焼結体の製造法および電子ビーム蒸着用ソース
JPH05310467A (ja) * 1992-05-11 1993-11-22 Dowa Mining Co Ltd ＺｎＳ系焼結体の製造方法
JP2006241183A (ja) * 2005-02-28 2006-09-14 Fuji Photo Film Co Ltd エレクトロルミネッセンス蛍光体及びそれを用いたｅｌ素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254001A (ja) * 1985-09-03 1987-03-09 Seiko Epson Corp スパツタリング用タ−ゲツトの製造方法
DE19715806A1 (de) * 1997-04-16 1998-10-22 Leybold Materials Gmbh Verfahren zur Herstellung eines Sputtertargets auf der Basis von Zinksulfid sowie das Sputtertarget selbst
JP2001207202A (ja) * 1999-11-19 2001-07-31 Shigeru Mashita 高保磁力を持つ金属バルク材の製造方法、それによって作った金属バルク材及びターゲット材
JP2006315878A (ja) * 2005-05-10 2006-11-24 Sumitomo Electric Ind Ltd 透光性セラミックスおよびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS463378B1 (ja) * 1965-06-16 1971-01-27
JPS5922648A (ja) * 1982-06-25 1984-02-04 Agency Of Ind Science & Technol 凝縮系物質の衝撃圧縮方法及び装置
JPH0259463A (ja) * 1988-08-24 1990-02-28 Matsushita Electric Ind Co Ltd ＺｎＳ焼結体の製造法および電子ビーム蒸着用ソース
JPH05310467A (ja) * 1992-05-11 1993-11-22 Dowa Mining Co Ltd ＺｎＳ系焼結体の製造方法
JP2006241183A (ja) * 2005-02-28 2006-09-14 Fuji Photo Film Co Ltd エレクトロルミネッセンス蛍光体及びそれを用いたｅｌ素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011068551A (ja) * 2009-08-22 2011-04-07 Kumamoto Univ 無機化合物バルク体の製造方法及び無機化合物バルク体

Also Published As

Publication number Publication date
JPWO2009028642A1 (ja) 2010-12-02
WO2009028087A1 (ja) 2009-03-05
TW200918693A (en) 2009-05-01

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