WO2009025138A1 - Circuit intégré semi-conducteur et module de circuit haute fréquence - Google Patents

Circuit intégré semi-conducteur et module de circuit haute fréquence Download PDF

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Publication number
WO2009025138A1
WO2009025138A1 PCT/JP2008/062887 JP2008062887W WO2009025138A1 WO 2009025138 A1 WO2009025138 A1 WO 2009025138A1 JP 2008062887 W JP2008062887 W JP 2008062887W WO 2009025138 A1 WO2009025138 A1 WO 2009025138A1
Authority
WO
WIPO (PCT)
Prior art keywords
high frequency
semiconductor integrated
integrated circuit
inductor
capacitor
Prior art date
Application number
PCT/JP2008/062887
Other languages
English (en)
Japanese (ja)
Inventor
Nobuo Sakai
Original Assignee
Murata Manufacturing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co., Ltd. filed Critical Murata Manufacturing Co., Ltd.
Publication of WO2009025138A1 publication Critical patent/WO2009025138A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/645—Inductive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Filters And Equalizers (AREA)

Abstract

Selon l'invention, une bobine d'inductance (4) et un condensateur (5) sont formés sur une carte de circuit semi-conducteur (2). Une extrémité de la bobine (4) est connectée à une ligne de signal (3), et l'autre extrémité est connectée à un motif de masse (6) formé pour entourer la région dans laquelle la bobine (4) est formée. Une extrémité du condensateur (5) est connectée à la ligne de signal (3) et l'autre extrémité est connectée à un motif de masse (7) formé pour entourer la région dans laquelle le condensateur (5) est formé. Les motifs de masse (6, 7) sont ensuite séparés et un résonateur LC est configuré. Par utilisation d'un tel résonateur LC en tant que filtre LC, un module haute fréquence est configuré par intégration d'une pluralité d'éléments semi-conducteurs sur une seule puce de semi-conducteur.
PCT/JP2008/062887 2007-08-21 2008-07-17 Circuit intégré semi-conducteur et module de circuit haute fréquence WO2009025138A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-214221 2007-08-21
JP2007214221 2007-08-21

Publications (1)

Publication Number Publication Date
WO2009025138A1 true WO2009025138A1 (fr) 2009-02-26

Family

ID=40378046

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062887 WO2009025138A1 (fr) 2007-08-21 2008-07-17 Circuit intégré semi-conducteur et module de circuit haute fréquence

Country Status (1)

Country Link
WO (1) WO2009025138A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018110393A1 (fr) * 2016-12-14 2018-06-21 株式会社村田製作所 Circuit intégré de commutation, module frontal, et dispositif de communication

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996027905A1 (fr) * 1995-03-06 1996-09-12 Hitachi, Ltd. Circuit amplificateur haute frequence
JP2001326558A (ja) * 2000-05-16 2001-11-22 Mitsubishi Electric Corp 移相器
JP2005198241A (ja) * 2003-12-12 2005-07-21 Sony Corp フィルタ回路

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996027905A1 (fr) * 1995-03-06 1996-09-12 Hitachi, Ltd. Circuit amplificateur haute frequence
JP2001326558A (ja) * 2000-05-16 2001-11-22 Mitsubishi Electric Corp 移相器
JP2005198241A (ja) * 2003-12-12 2005-07-21 Sony Corp フィルタ回路

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018110393A1 (fr) * 2016-12-14 2018-06-21 株式会社村田製作所 Circuit intégré de commutation, module frontal, et dispositif de communication
KR20190040041A (ko) * 2016-12-14 2019-04-16 가부시키가이샤 무라타 세이사쿠쇼 스위치 ic, 프론트 엔드 모듈 및 통신 장치
KR102359559B1 (ko) 2016-12-14 2022-02-08 가부시키가이샤 무라타 세이사쿠쇼 스위치 ic, 프론트 엔드 모듈 및 통신 장치
US11270961B2 (en) 2016-12-14 2022-03-08 Murata Manufacturing Co., Ltd. Switch IC, front-end module, and communication apparatus

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