WO2009025138A1 - Semiconductor integrated circuit and high frequency circuit module - Google Patents
Semiconductor integrated circuit and high frequency circuit module Download PDFInfo
- Publication number
- WO2009025138A1 WO2009025138A1 PCT/JP2008/062887 JP2008062887W WO2009025138A1 WO 2009025138 A1 WO2009025138 A1 WO 2009025138A1 JP 2008062887 W JP2008062887 W JP 2008062887W WO 2009025138 A1 WO2009025138 A1 WO 2009025138A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- high frequency
- semiconductor integrated
- integrated circuit
- inductor
- capacitor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Filters And Equalizers (AREA)
Abstract
An inductor (4) and a capacitor (5) are formed on a semiconductor circuit board (2). One end of the inductor (4) is connected to a signal line (3), and the other end is connected to a ground pattern (6) formed to surround the region where the inductor (4) is formed. One end of the capacitor (5) is connected to the signal line (3) and the other end is connected to a ground pattern (7) formed to surround the region where the capacitor (5) is formed. Then, the ground patterns (6, 7) are separated and an LC resonator is configured. By using such LC resonator as an LC filter, a high frequency module is configured by integrating a plurality of semiconductor elements on one semiconductor chip.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-214221 | 2007-08-21 | ||
JP2007214221 | 2007-08-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009025138A1 true WO2009025138A1 (en) | 2009-02-26 |
Family
ID=40378046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/062887 WO2009025138A1 (en) | 2007-08-21 | 2008-07-17 | Semiconductor integrated circuit and high frequency circuit module |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2009025138A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018110393A1 (en) * | 2016-12-14 | 2018-06-21 | 株式会社村田製作所 | Switch ic, front-end module, and communication device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996027905A1 (en) * | 1995-03-06 | 1996-09-12 | Hitachi, Ltd. | High-frequency amplifier circuit |
JP2001326558A (en) * | 2000-05-16 | 2001-11-22 | Mitsubishi Electric Corp | Phase shifter |
JP2005198241A (en) * | 2003-12-12 | 2005-07-21 | Sony Corp | Filter circuit |
-
2008
- 2008-07-17 WO PCT/JP2008/062887 patent/WO2009025138A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996027905A1 (en) * | 1995-03-06 | 1996-09-12 | Hitachi, Ltd. | High-frequency amplifier circuit |
JP2001326558A (en) * | 2000-05-16 | 2001-11-22 | Mitsubishi Electric Corp | Phase shifter |
JP2005198241A (en) * | 2003-12-12 | 2005-07-21 | Sony Corp | Filter circuit |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018110393A1 (en) * | 2016-12-14 | 2018-06-21 | 株式会社村田製作所 | Switch ic, front-end module, and communication device |
KR20190040041A (en) * | 2016-12-14 | 2019-04-16 | 가부시키가이샤 무라타 세이사쿠쇼 | Switch IC, front-end module and communication device |
KR102359559B1 (en) | 2016-12-14 | 2022-02-08 | 가부시키가이샤 무라타 세이사쿠쇼 | Switch ICs, front-end modules and communication devices |
US11270961B2 (en) | 2016-12-14 | 2022-03-08 | Murata Manufacturing Co., Ltd. | Switch IC, front-end module, and communication apparatus |
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