WO2009022677A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
WO2009022677A1
WO2009022677A1 PCT/JP2008/064396 JP2008064396W WO2009022677A1 WO 2009022677 A1 WO2009022677 A1 WO 2009022677A1 JP 2008064396 W JP2008064396 W JP 2008064396W WO 2009022677 A1 WO2009022677 A1 WO 2009022677A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon substrate
gate electrode
semiconductor device
diffusion region
ionization
Prior art date
Application number
PCT/JP2008/064396
Other languages
French (fr)
Japanese (ja)
Inventor
Akihito Tanabe
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009528126A priority Critical patent/JP5440169B2/en
Publication of WO2009022677A1 publication Critical patent/WO2009022677A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66356—Gated diodes, e.g. field controlled diodes [FCD], static induction thyristors [SITh], field controlled thyristors [FCTh]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)

Abstract

[PROBLEMS] To provide a semiconductor device which uses avalanche amplification by impact ionization and has an impact-ionization MISFET having improved reliability. [MEANS FOR SOLVING PROBLEMS] On a p-type silicon substrate having low impurity concentration, a gate insulating film and a gate electrode are formed, and in the silicon substrate, an n-type diffusion region is formed at a position adjacent to one of the side surfaces of a gate electrode. A p-type diffusion region is formed on the silicon substrate at a position separated from the other side surface of the gate electrode.
PCT/JP2008/064396 2007-08-10 2008-08-11 Semiconductor device WO2009022677A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009528126A JP5440169B2 (en) 2007-08-10 2008-08-11 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-209326 2007-08-10
JP2007209326 2007-08-10

Publications (1)

Publication Number Publication Date
WO2009022677A1 true WO2009022677A1 (en) 2009-02-19

Family

ID=40350729

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064396 WO2009022677A1 (en) 2007-08-10 2008-08-11 Semiconductor device

Country Status (2)

Country Link
JP (1) JP5440169B2 (en)
WO (1) WO2009022677A1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04245480A (en) * 1991-01-30 1992-09-02 Fujitsu Ltd Mos type semiconductor device and manufacture thereof
JP2002110971A (en) * 2000-09-28 2002-04-12 Toshiba Corp Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007008173A1 (en) * 2005-07-07 2007-01-18 National University Of Singapore Semiconductor structure for transistors with enhanced subthreshold swing and methods of manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04245480A (en) * 1991-01-30 1992-09-02 Fujitsu Ltd Mos type semiconductor device and manufacture thereof
JP2002110971A (en) * 2000-09-28 2002-04-12 Toshiba Corp Semiconductor device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
MAYER F. ET AL.: "Experimental and TCAD Investigation of the Two Components of the Impact Ionization MOSFET(IMOS) Switching", IEEE ELECTRON DEVICE LETTERS, vol. 28, no. 7, July 2007 (2007-07-01), pages 619 - 621, XP011186077 *
TOH E.-H. ET AL.: "I-MOS Transistor With an Elevated Silicon-Germanium Impact-Ionization Region for Bandgap Engineering", IEEE ELECTRON DEVICE LETTERS, vol. 27, no. 12, December 2006 (2006-12-01), pages 975 - 977, XP011144141 *
WOO YOUNG CHOI ET AL.: "Effect of Source Extension Junction Depth and Substrate Doping Concentration on I-MOS Device Characteristics", IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. 53, no. 5, May 2006 (2006-05-01), pages 1282 - 1285 *

Also Published As

Publication number Publication date
JP5440169B2 (en) 2014-03-12
JPWO2009022677A1 (en) 2010-11-18

Similar Documents

Publication Publication Date Title
WO2009078069A1 (en) Semiconductor device
WO2008111991A3 (en) Spintronic transistor
TW200733398A (en) Semiconductor device and manufacturing method thereof
TW200705641A (en) Initial-on SCR device for on-chip ESD protection
TW200633207A (en) Semiconductor device
TW200616095A (en) Ultra-thin body super-steep retrograde well (SSRW) fet devices
TW200644237A (en) High-voltage MOS device
SG170670A1 (en) Method of fabricating a silicon tunneling field effect transistor (tfet) with high drive current
TW200707738A (en) Substrate backgate for trigate FET
WO2008123352A1 (en) Semiconductor device
TW200642080A (en) A novel semiconductor device with improved channel strain effect
WO2008002879A3 (en) Lateral trench gate fet with direct source-drain current path
TW200703570A (en) Semionductor device having cell transistor with recess channel structure and method of manufacturing the same
WO2007072655A3 (en) Lateral soi semiconductor devices and manufacturing method thereof
JP2011077509A5 (en) Transistor
TW200644248A (en) Semiconductor device and manufacturing method thereof
EP1873838A4 (en) Semiconductor device and method for manufacturing same
WO2006070304A3 (en) Soi device
TW200713576A (en) Semiconductor device
WO2011151681A3 (en) Semiconductor device and solid state relay using same
EP1936695A4 (en) Silicon carbide semiconductor device
TW200733386A (en) Semiconductor device
TW200637020A (en) Photodetector
EP1976002A3 (en) Semiconductor device and method for manufacturing the same
TW200635024A (en) ESD protection for high voltage applications

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08792379

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2009528126

Country of ref document: JP

122 Ep: pct application non-entry in european phase

Ref document number: 08792379

Country of ref document: EP

Kind code of ref document: A1