WO2009022377A1 - Carbure de silicium pour élément de détection de rayonnement et procédé de détection de rayonnement - Google Patents

Carbure de silicium pour élément de détection de rayonnement et procédé de détection de rayonnement Download PDF

Info

Publication number
WO2009022377A1
WO2009022377A1 PCT/JP2007/065727 JP2007065727W WO2009022377A1 WO 2009022377 A1 WO2009022377 A1 WO 2009022377A1 JP 2007065727 W JP2007065727 W JP 2007065727W WO 2009022377 A1 WO2009022377 A1 WO 2009022377A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
radiation
sic
detecting
detecting element
Prior art date
Application number
PCT/JP2007/065727
Other languages
English (en)
Japanese (ja)
Inventor
Hideharu Matsuura
Original Assignee
Osaka Electro-Communication University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka Electro-Communication University filed Critical Osaka Electro-Communication University
Priority to JP2008558133A priority Critical patent/JPWO2009022377A1/ja
Priority to PCT/JP2007/065727 priority patent/WO2009022377A1/fr
Publication of WO2009022377A1 publication Critical patent/WO2009022377A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1037—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIVBVI compounds
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)

Abstract

Elément de détection de rayonnement. Du SiC de grande pureté possédant une propriété semi-isolante est utilisé pour l'élément de détection de rayonnement. Sur une face d'un SiC (1), une électrode (2) ayant une forme circulaire d'environ 1,25 mm de diamètre est formée sous la forme d'un plan de détection de rayons X. Au centre de l'autre face du SiC (1), une électrode (3) est formée. Entre les électrodes (2, 3) une tension CC ayant une valeur prédéterminée est appliquée. Les électrons générés à l'intérieur du SiC (1) par les rayons X incidents dans l'électrode (2) sont recueillis au niveau de l'électrode (3), et ensuite un signal électrique est émis vers un amplificateur (20) à partir de l'électrode (3). L'amplificateur (20) amplifie le signal électrique introduit en lui et délivre une tension selon le nombre des électrons générés vers un analyseur muticanaux.
PCT/JP2007/065727 2007-08-10 2007-08-10 Carbure de silicium pour élément de détection de rayonnement et procédé de détection de rayonnement WO2009022377A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008558133A JPWO2009022377A1 (ja) 2007-08-10 2007-08-10 放射線検出素子用のシリコンカーバイド及び放射線検出方法
PCT/JP2007/065727 WO2009022377A1 (fr) 2007-08-10 2007-08-10 Carbure de silicium pour élément de détection de rayonnement et procédé de détection de rayonnement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/065727 WO2009022377A1 (fr) 2007-08-10 2007-08-10 Carbure de silicium pour élément de détection de rayonnement et procédé de détection de rayonnement

Publications (1)

Publication Number Publication Date
WO2009022377A1 true WO2009022377A1 (fr) 2009-02-19

Family

ID=40350441

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/065727 WO2009022377A1 (fr) 2007-08-10 2007-08-10 Carbure de silicium pour élément de détection de rayonnement et procédé de détection de rayonnement

Country Status (2)

Country Link
JP (1) JPWO2009022377A1 (fr)
WO (1) WO2009022377A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2016143156A1 (ja) * 2015-03-09 2017-06-15 株式会社日立製作所 放射線検出器およびそれを用いた放射線検出装置
WO2021168693A1 (fr) * 2020-02-26 2021-09-02 Shenzhen Xpectvision Technology Co., Ltd. Détecteur de rayonnement

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002148342A (ja) * 2000-11-07 2002-05-22 Canon Inc 放射線撮像装置
JP2004228482A (ja) * 2003-01-27 2004-08-12 Japan Atom Energy Res Inst 化合物半導体ＩｎＳｂ単結晶を用いた半導体放射線検出器
JP2006234661A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 放射線入射位置検出装置および放射線入射位置検出方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5260085A (en) * 1975-11-12 1977-05-18 Tdk Corp Neutron detector
JPS6412582A (en) * 1987-07-07 1989-01-17 Matsushita Electric Ind Co Ltd Semiconductor radiation detector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002148342A (ja) * 2000-11-07 2002-05-22 Canon Inc 放射線撮像装置
JP2004228482A (ja) * 2003-01-27 2004-08-12 Japan Atom Energy Res Inst 化合物半導体ＩｎＳｂ単結晶を用いた半導体放射線検出器
JP2006234661A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 放射線入射位置検出装置および放射線入射位置検出方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2016143156A1 (ja) * 2015-03-09 2017-06-15 株式会社日立製作所 放射線検出器およびそれを用いた放射線検出装置
US11119228B2 (en) 2015-03-09 2021-09-14 Hitachi, Ltd. Radiation detector and radiation detection device using the same
WO2021168693A1 (fr) * 2020-02-26 2021-09-02 Shenzhen Xpectvision Technology Co., Ltd. Détecteur de rayonnement

Also Published As

Publication number Publication date
JPWO2009022377A1 (ja) 2010-11-11

Similar Documents

Publication Publication Date Title
WO2009022378A1 (fr) Détecteur de rayonnement
WO2011051299A3 (fr) Détecteur, procédé de fabrication d'un détecteur et appareil d'imagerie
Zeng et al. Digital logarithmic airborne gamma ray spectrometer
KR20090119824A (ko) 방사선 검출 장치 및 방사선의 검출 방법
WO2009022377A1 (fr) Carbure de silicium pour élément de détection de rayonnement et procédé de détection de rayonnement
KR101188681B1 (ko) 감마선 및 중성자를 구분하여 측정할 수 있는 방사선 검출 장치
WO2006135683A3 (fr) Matrices et detecteurs haute sensibilite, haute resolution
JP2022095735A (ja) ハウジング内に分析器を有する放射線検出装置
WO2008054883A2 (fr) Dispositifs et procédés pour détecter et analyser un rayonnement
Monteiro et al. An argon gas proportional scintillation counter with UV avalanche photodiode scintillation readout
JP2019144172A (ja) 放射線検出器
Suzuki et al. Organic semiconductors as real-time radiation detectors
Margato et al. Effective decay time of CF4 secondary scintillation
Patra et al. Characteristic study of a quadruple GEM detector and its comparison with a triple GEM detector
Ni et al. Performance of a large area avalanche photodiode in a liquid xenon ionization and scintillation chamber
Gupta et al. Pulse height and timing characteristics of CsI (Tl)-Si (PIN) detector for γ‐rays and fission fragments
CN105137471A (zh) 一种抑制γ干扰的低能β核素表面污染探测系统和方法
WO2012043788A1 (fr) Détecteur de rayonnement
Genolini et al. Pulse shape discrimination at low energies with a double sided, small-pitch strip silicon detector
WO2007048116A3 (fr) Identification de nouveaux materiaux detecteurs semi-conducteurs par conductivite d'ionisation a courant continu
Wang et al. Alpha particle transient response of a polycrystalline diamond detector
WO2012065200A3 (fr) Procédé et dispositif pour détecter des particules élémentaires
CN203786097U (zh) 一种氦离子化检测器
Petukhov et al. The research of polarization in CdTe PIN detectors of nuclear radiation
WO2002067271A3 (fr) Systemes d'imagerie et detecteurs de particules faisant appel a du silicium enrichi en elements plus lourds

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2008558133

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07792372

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07792372

Country of ref document: EP

Kind code of ref document: A1