WO2009022377A1 - Silicon carbide for radiation detecting element and method of detecting radiation - Google Patents

Silicon carbide for radiation detecting element and method of detecting radiation Download PDF

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Publication number
WO2009022377A1
WO2009022377A1 PCT/JP2007/065727 JP2007065727W WO2009022377A1 WO 2009022377 A1 WO2009022377 A1 WO 2009022377A1 JP 2007065727 W JP2007065727 W JP 2007065727W WO 2009022377 A1 WO2009022377 A1 WO 2009022377A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
radiation
sic
detecting
detecting element
Prior art date
Application number
PCT/JP2007/065727
Other languages
French (fr)
Japanese (ja)
Inventor
Hideharu Matsuura
Original Assignee
Osaka Electro-Communication University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka Electro-Communication University filed Critical Osaka Electro-Communication University
Priority to PCT/JP2007/065727 priority Critical patent/WO2009022377A1/en
Priority to JP2008558133A priority patent/JPWO2009022377A1/en
Publication of WO2009022377A1 publication Critical patent/WO2009022377A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H01L31/1037—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIVBVI compounds
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Abstract

A radiation detecting element. High-purity SiC having a semi-insulating property is used for the radiation detecting element. On one face of an SiC (1), an electrode (2) having a circular shape of about 1.25 mm in diameter is formed as an X-ray detection plane. At the center of the other face of the SiC (1), an electrode (3) is formed. Between the electrodes (2, 3), a DC voltage having a predetermined value is applied. Electrons generated inside the SiC (1) by X rays incident into the electrode (2) are collected at the electrode (3), and then an electric signal is output to an amplifier (20) from the electrode (3). The amplifier (20) amplifies the electric signal inputted thereto and outputs a voltage according to the number of the electrons generated to a multichannel analyzer.
PCT/JP2007/065727 2007-08-10 2007-08-10 Silicon carbide for radiation detecting element and method of detecting radiation WO2009022377A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2007/065727 WO2009022377A1 (en) 2007-08-10 2007-08-10 Silicon carbide for radiation detecting element and method of detecting radiation
JP2008558133A JPWO2009022377A1 (en) 2007-08-10 2007-08-10 Silicon carbide for radiation detection element and radiation detection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/065727 WO2009022377A1 (en) 2007-08-10 2007-08-10 Silicon carbide for radiation detecting element and method of detecting radiation

Publications (1)

Publication Number Publication Date
WO2009022377A1 true WO2009022377A1 (en) 2009-02-19

Family

ID=40350441

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/065727 WO2009022377A1 (en) 2007-08-10 2007-08-10 Silicon carbide for radiation detecting element and method of detecting radiation

Country Status (2)

Country Link
JP (1) JPWO2009022377A1 (en)
WO (1) WO2009022377A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2016143156A1 (en) * 2015-03-09 2017-06-15 株式会社日立製作所 Radiation detector and radiation detection apparatus using the same
WO2021168693A1 (en) * 2020-02-26 2021-09-02 Shenzhen Xpectvision Technology Co., Ltd. Radiation detector

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002148342A (en) * 2000-11-07 2002-05-22 Canon Inc Radiation imaging device
JP2004228482A (en) * 2003-01-27 2004-08-12 Japan Atom Energy Res Inst SEMICONDUCTOR RADIATION DETECTOR USING COMPOUND SEMICONDUCTOR InSb SINGLE CRYSTAL
JP2006234661A (en) * 2005-02-25 2006-09-07 Toshiba Corp Radiation incident position detector, and radiation incident position detecting method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5260085A (en) * 1975-11-12 1977-05-18 Tdk Corp Neutron detector
JPS6412582A (en) * 1987-07-07 1989-01-17 Matsushita Electric Ind Co Ltd Semiconductor radiation detector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002148342A (en) * 2000-11-07 2002-05-22 Canon Inc Radiation imaging device
JP2004228482A (en) * 2003-01-27 2004-08-12 Japan Atom Energy Res Inst SEMICONDUCTOR RADIATION DETECTOR USING COMPOUND SEMICONDUCTOR InSb SINGLE CRYSTAL
JP2006234661A (en) * 2005-02-25 2006-09-07 Toshiba Corp Radiation incident position detector, and radiation incident position detecting method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2016143156A1 (en) * 2015-03-09 2017-06-15 株式会社日立製作所 Radiation detector and radiation detection apparatus using the same
US11119228B2 (en) 2015-03-09 2021-09-14 Hitachi, Ltd. Radiation detector and radiation detection device using the same
WO2021168693A1 (en) * 2020-02-26 2021-09-02 Shenzhen Xpectvision Technology Co., Ltd. Radiation detector

Also Published As

Publication number Publication date
JPWO2009022377A1 (en) 2010-11-11

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