WO2009019762A1 - 光マトリックスデバイスの製造方法 - Google Patents

光マトリックスデバイスの製造方法 Download PDF

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Publication number
WO2009019762A1
WO2009019762A1 PCT/JP2007/065428 JP2007065428W WO2009019762A1 WO 2009019762 A1 WO2009019762 A1 WO 2009019762A1 JP 2007065428 W JP2007065428 W JP 2007065428W WO 2009019762 A1 WO2009019762 A1 WO 2009019762A1
Authority
WO
WIPO (PCT)
Prior art keywords
optical matrix
matrix device
thermal processing
manufacturing optical
conductive
Prior art date
Application number
PCT/JP2007/065428
Other languages
English (en)
French (fr)
Inventor
Susumu Adachi
Original Assignee
Shimadzu Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corporation filed Critical Shimadzu Corporation
Priority to PCT/JP2007/065428 priority Critical patent/WO2009019762A1/ja
Publication of WO2009019762A1 publication Critical patent/WO2009019762A1/ja

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14659—Direct radiation imagers structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour

Abstract

　この発明の光マトリックスデバイスの製造方法は、印刷塗布製膜工程で、デバイスを形成する導電材料、半導体材料、絶縁材料のうちの少なくとも１つの材料を印刷塗布製膜によって形成する場合において、上述した導電材料、半導体材料、絶縁材料のうちの少なくとも１つの材料に対して、熱的加工工程では熱的加工を施す。このような熱的加工を施すことで、デバイス（実施例ではフラットパネル型Ｘ線検出器：ＦＰＤ）の特性を向上させることができる。
PCT/JP2007/065428 2007-08-07 2007-08-07 光マトリックスデバイスの製造方法 WO2009019762A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/065428 WO2009019762A1 (ja) 2007-08-07 2007-08-07 光マトリックスデバイスの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/065428 WO2009019762A1 (ja) 2007-08-07 2007-08-07 光マトリックスデバイスの製造方法

Publications (1)

Publication Number Publication Date
WO2009019762A1 true WO2009019762A1 (ja) 2009-02-12

Family

ID=40341010

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/065428 WO2009019762A1 (ja) 2007-08-07 2007-08-07 光マトリックスデバイスの製造方法

Country Status (1)

Country Link
WO (1) WO2009019762A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011044650A (ja) * 2009-08-24 2011-03-03 Shimadzu Corp アクティブマトリックスアレイ及びその製造方法
WO2012014706A1 (ja) * 2010-07-27 2012-02-02 富士フイルム株式会社 放射線検出器及び放射線検出器の製造方法
JP2012026979A (ja) * 2010-07-27 2012-02-09 Fujifilm Corp 放射線検出器及び放射線検出器の製造方法
JP2012032170A (ja) * 2010-07-28 2012-02-16 Fujifilm Corp 放射線検出器及び放射線検出器の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001179167A (ja) * 1999-12-24 2001-07-03 Nec Corp 薄膜形成方法
JP2004297011A (ja) * 2003-03-28 2004-10-21 Matsushita Electric Ind Co Ltd 有機トランジスタの製造方法、及び有機ｅｌ表示装置の製造方法
JP2007005454A (ja) * 2005-06-22 2007-01-11 Shimadzu Corp 光または放射線検出器の製造方法および撮像装置
JP2007012672A (ja) * 2005-06-28 2007-01-18 Seiko Epson Corp 半導体装置、半導体装置の製造方法、電気光学装置及び電子機器
JP2007042723A (ja) * 2005-08-01 2007-02-15 Seiko Epson Corp シリコン膜の製造方法、薄膜半導体素子の製造方法、電子機器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001179167A (ja) * 1999-12-24 2001-07-03 Nec Corp 薄膜形成方法
JP2004297011A (ja) * 2003-03-28 2004-10-21 Matsushita Electric Ind Co Ltd 有機トランジスタの製造方法、及び有機ｅｌ表示装置の製造方法
JP2007005454A (ja) * 2005-06-22 2007-01-11 Shimadzu Corp 光または放射線検出器の製造方法および撮像装置
JP2007012672A (ja) * 2005-06-28 2007-01-18 Seiko Epson Corp 半導体装置、半導体装置の製造方法、電気光学装置及び電子機器
JP2007042723A (ja) * 2005-08-01 2007-02-15 Seiko Epson Corp シリコン膜の製造方法、薄膜半導体素子の製造方法、電子機器

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011044650A (ja) * 2009-08-24 2011-03-03 Shimadzu Corp アクティブマトリックスアレイ及びその製造方法
WO2012014706A1 (ja) * 2010-07-27 2012-02-02 富士フイルム株式会社 放射線検出器及び放射線検出器の製造方法
JP2012026979A (ja) * 2010-07-27 2012-02-09 Fujifilm Corp 放射線検出器及び放射線検出器の製造方法
JP2012032170A (ja) * 2010-07-28 2012-02-16 Fujifilm Corp 放射線検出器及び放射線検出器の製造方法

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