WO2009014118A1 - Ｍｅｍｓセンサおよびｍｅｍｓセンサの製造方法 - Google Patents

Ｍｅｍｓセンサおよびｍｅｍｓセンサの製造方法 Download PDF

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Publication number
WO2009014118A1
WO2009014118A1 PCT/JP2008/063134 JP2008063134W WO2009014118A1 WO 2009014118 A1 WO2009014118 A1 WO 2009014118A1 JP 2008063134 W JP2008063134 W JP 2008063134W WO 2009014118 A1 WO2009014118 A1 WO 2009014118A1
Authority
WO
WIPO (PCT)
Prior art keywords
mems sensor
holes
thin film
sacrificing layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/063134
Other languages
English (en)
French (fr)
Inventor
Goro Nakatani
Mizuho Okada
Nobuhisa Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2009524487A priority Critical patent/JPWO2009014118A1/ja
Priority to US12/670,406 priority patent/US8723279B2/en
Publication of WO2009014118A1 publication Critical patent/WO2009014118A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388—Etch mask forming
    • B81C1/00404—Mask characterised by its size, orientation or shape
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2499/00—Aspects covered by H04R or H04S not otherwise provided for in their subgroups
    • H04R2499/10—General applications
    • H04R2499/11—Transducers incorporated or for use in hand-held devices, e.g. mobile phones, PDA's, camera's
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)

Abstract

　本発明のＭＥＭＳセンサは、基板と、前記基板の一方面に対して間隔を空けて対向配置され、複数の下貫通孔がその厚さ方向に貫通して形成された下薄膜と、前記下薄膜に対して前記基板と反対側に間隔を空けて対向配置され、複数の上貫通孔がその厚さ方向に貫通して形成された上薄膜とを含む。また、本発明のＭＥＭＳセンサの製造方法は、基板の一方面上に第１犠牲層を形成する工程と、前記第１犠牲層上に、それぞれ厚さ方向に延びる複数の下貫通孔を有する下薄膜を形成する工程と、前記下薄膜上に第２犠牲層を形成する工程と、前記第２犠牲層上に、それぞれ厚さ方向に延びる複数の上貫通孔を有する上薄膜を形成する工程と、エッチングにより、前記上貫通孔を介して、前記第２犠牲層を除去する工程と、エッチングにより、前記上貫通孔および前記下貫通孔を介して、前記第１犠牲層を除去する工程とを含む。
PCT/JP2008/063134 2007-07-24 2008-07-22 Ｍｅｍｓセンサおよびｍｅｍｓセンサの製造方法 Ceased WO2009014118A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009524487A JPWO2009014118A1 (ja) 2007-07-24 2008-07-22 Ｍｅｍｓセンサおよびｍｅｍｓセンサの製造方法
US12/670,406 US8723279B2 (en) 2007-07-24 2008-07-22 MEMS sensor, and MEMS sensor manufacturing method

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007-192205 2007-07-24
JP2007192201 2007-07-24
JP2007192205 2007-07-24
JP2007-192206 2007-07-24
JP2007192206 2007-07-24
JP2007-192201 2007-07-24

Publications (1)

Publication Number Publication Date
WO2009014118A1 true WO2009014118A1 (ja) 2009-01-29

Family

ID=40281369

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063134 Ceased WO2009014118A1 (ja) 2007-07-24 2008-07-22 Ｍｅｍｓセンサおよびｍｅｍｓセンサの製造方法

Country Status (3)

Country Link
US (1) US8723279B2 (ja)
JP (1) JPWO2009014118A1 (ja)
WO (1) WO2009014118A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006055147B4 (de) * 2006-11-03 2011-01-27 Infineon Technologies Ag Schallwandlerstruktur und Verfahren zur Herstellung einer Schallwandlerstruktur
US8368153B2 (en) * 2010-04-08 2013-02-05 United Microelectronics Corp. Wafer level package of MEMS microphone and manufacturing method thereof
JP5204171B2 (ja) * 2010-08-25 2013-06-05 株式会社東芝 電気部品およびその製造方法
US12506242B2 (en) * 2022-01-28 2025-12-23 Texas Instruments Incorporated Coupling interfaces for waveguide structures and methods of fabrication

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006025211A1 (ja) * 2004-09-01 2006-03-09 Matsushita Electric Industrial Co., Ltd. エレクトレットコンデンサーマイクロフォン
JP2006157863A (ja) * 2004-11-04 2006-06-15 Omron Corp 容量型振動センサ及びその製造方法
JP2007124306A (ja) * 2005-10-28 2007-05-17 Sanyo Electric Co Ltd 情報表示装置
JP2007142663A (ja) * 2005-11-16 2007-06-07 Karaku Denshi Kofun Yugenkoshi コンデンサマイクロホン用振動ユニット及びコンデンサマイクロホンの製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5870482A (en) 1997-02-25 1999-02-09 Knowles Electronics, Inc. Miniature silicon condenser microphone

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006025211A1 (ja) * 2004-09-01 2006-03-09 Matsushita Electric Industrial Co., Ltd. エレクトレットコンデンサーマイクロフォン
JP2006157863A (ja) * 2004-11-04 2006-06-15 Omron Corp 容量型振動センサ及びその製造方法
JP2007124306A (ja) * 2005-10-28 2007-05-17 Sanyo Electric Co Ltd 情報表示装置
JP2007142663A (ja) * 2005-11-16 2007-06-07 Karaku Denshi Kofun Yugenkoshi コンデンサマイクロホン用振動ユニット及びコンデンサマイクロホンの製造方法

Also Published As

Publication number Publication date
US8723279B2 (en) 2014-05-13
JPWO2009014118A1 (ja) 2010-10-07
US20100193886A1 (en) 2010-08-05

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