WO2009010595A1 - Dispositif magnéto-électrique et procédé pour écrire des informations non volatiles dans ce dispositif - Google Patents

Dispositif magnéto-électrique et procédé pour écrire des informations non volatiles dans ce dispositif Download PDF

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Publication number
WO2009010595A1
WO2009010595A1 PCT/ES2007/000427 ES2007000427W WO2009010595A1 WO 2009010595 A1 WO2009010595 A1 WO 2009010595A1 ES 2007000427 W ES2007000427 W ES 2007000427W WO 2009010595 A1 WO2009010595 A1 WO 2009010595A1
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WO
WIPO (PCT)
Prior art keywords
ferromagnetic layer
electric field
layer
magnetic
application
Prior art date
Application number
PCT/ES2007/000427
Other languages
English (en)
Spanish (es)
Inventor
Josep FONTCUBERTA I GRIÑÓ
Florencio SÁNCHEZ BARRENA
Xavier MATÍ I ROVIROSA
David Hrabovsky
Vladimir Laukhin
Vassil Skumryev
Original Assignee
Consejo Superior De Investigaciones Científicas
Universitat Autònoma De Barcelona
Institució Catalana De Recerca I Estudis Avançats
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consejo Superior De Investigaciones Científicas, Universitat Autònoma De Barcelona, Institució Catalana De Recerca I Estudis Avançats filed Critical Consejo Superior De Investigaciones Científicas
Priority to PCT/ES2007/000427 priority Critical patent/WO2009010595A1/fr
Publication of WO2009010595A1 publication Critical patent/WO2009010595A1/fr

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods

Definitions

  • This patent deals with a magnetoelectric device and, in particular, with a memory and / or logical element as well as a method for writing non-volatile information in said magnetoelectric device.
  • AMR Anisotropic magnetoresistance
  • An anisotropic magnetoresistance sensor is a magnetic sensor based on the dependence of the electrical resistance of a layer of a soft ferromagnetic material with the angle formed by its magnetization and the direction of the application of the electric measuring current.
  • GMR Global Magnetic Resistance
  • MRAM nonvolatile random access magnetic memories
  • a GMR consists of at least two layers of ferromagnetic material separated by a non-magnetic metal.
  • a scheme of a basic GMR comprising two magnetic layers (100 and 102) separated by a metal layer (104) in two different states is shown in Fig. IA and Fig. IB.
  • a magnetic tunnel junction is formed by at least two layers of ferromagnetic material separated by a thin insulating layer.
  • the electric current through the MTJ depends on the relative orientation of the magnetization of the ferromagnetic layers.
  • the resistance of the MTJ is in a low resistance state, while, when the magnetizations are antiparallel, the resistance of the MTJ is in a state of high resistance.
  • the different values of the high and low resistance states in an MTJ can be used to determine the magnetic state of the ferromagnetic electrodes. Also, changing the relative orientation of the ferromagnetic electrodes can change the state of resistance of the MTJ.
  • MRAMs comprise ordered sets of MTJ.
  • the orientation of the magnetization of the free layer is usually controlled
  • SHEET Di £ REPLACEMENT (Regia 26) by an external magnetic field created by a pair of conductive wires (bit line and word line).
  • Fig. IC schematically shows an MRAM where the information can be memorized by creating a magnetic field at different points in the matrix through the intersections of electrical conductors. For example, to write a "1" in position 160, a current 153 is created in conductor 152 and a current 155 in conductor 154 to create a maximum field in position 160.
  • MRAMs need electrical power to be modified since they need an electric current to create the magnetic field (known as the Oersted field) that will be applied at a point on the device. Inherent in the use of electric currents for the creation of magnetic fields, there is also a Joule heating. Energy dissipation is an inconvenience in terms of electrical consumption of an energy source and a limitation on the degree of integration of MTJs into MRAMs.
  • WO2006 / 103065 discloses a magnetoresistive element and a method for writing information. The method is based on the announced dependence of the exchange bias (exchange field) between adjacent layers of ferromagnetic and magnetoelectric materials.
  • REPLACEMENT SHEET (Rule 26) maintain the electric field during cooling, leading to energy consumption in the end.
  • One of the objectives of this invention is to provide a device that overcomes these limitations (dissipation and energy consumption, as well as induced crosstalk) and propose a new strategy to control the magnetic state of this magnetic device.
  • Another objective of this invention is to provide a magnetoelectric device where the magnetic state, at least in a part thereof, is controlled by low energy consumption methods.
  • Another object of this invention is to provide a method for writing non-volatile information in the magnetoelectric device.
  • this invention relates to a device comprising at least one ferromagnetic layer and an element, coupled by exchange with the ferromagnetic layer in at least one part through an interface, to control the magnetic state of the ferromagnetic layer in the coupling zone by means of an electric field applied at least to the element formed by a material with the coupled ferroelectric and antiferromagnetic characteristics.
  • Exchange bias also called an exchange field, is a magnetic field that exists at the interface between a ferromagnetic and an antiferromagnetic material.
  • the structure of ferromagnetic domains of the material can be modified when the structure of ferroelectric domains of said material is modified; in particular when the state of ferroelectric polarization is changed, that is, when an electric field is applied.
  • OZ REPLACEMENT SHEET (Regia 26)
  • the magnetic state of the ferromagnetic layer is modified by an electric field, which allows information to be written by an electric field.
  • the magnetization of the ferromagnetic layer is controlled by an electric field and not by a magnetic field.
  • the energy required to change the magnetic state of the ferromagnetic layer is radically inferior in this invention to the energy required to create a current capable of creating a magnetic field to change the magnetization of the ferromagnetic layer.
  • the precision in the location where the Magnetization change in the ferromagnetic layer is much greater in this invention in addition to reducing the problem of crosstalk.
  • the material comprised in the element is the hexagonal phase of YMnO 3 that has the antiferromagnetic and ferromagnetic properties anchored.
  • Any other multiferroic material presenting anchorage or a strong coupling between the magnetic and ferroelectric properties could be used as an alternative in other embodiments.
  • RMnO 3 oxides could be used where R can be any element from Ho to Lu, Y or Sc) in hexagonal phase or oxides in phase
  • REPLACEMENT SHEET (Rule 26) orthorhombic such as TbMnO 3 or other oxides that do not contain manganese such as BiFeO 3 .
  • the first ferromagnetic layer is included in a GMR or MTJ type structure with a second ferromagnetic layer separated from the first by an intermediate layer.
  • these three layers would form GMR or MTJ devices.
  • the first ferromagnetic layer of the material is included in a magnetoresistive sensor based on anisotropic magnetoresistance (AMR).
  • a device in relation to the first aspect of the invention may include two metal electrodes suitable for the application of an electric field E through the element. Since the first ferromagnetic layer can be electrically conductive, one of the electrodes can be connected to this first ferromagnetic layer and the other directly to the element.
  • a second aspect of this invention relates to a method for writing non-volatile information by applying an electric field to the device according to the first aspect of the invention.
  • the method comprises the following stages:
  • IC is an example of a connection network of an existing MRAM
  • FIG. 2 shows a diagram of a device according to the invention
  • FIG. 3 shows a graphic representation of the magnetic moment obtained in a ferromagnetic layer of a device according to this invention against a magnetic field depending on an applied voltage
  • FIG. 4 shows a graphic representation of the dependence of the electrical resistance of a ferromagnetic layer of a device according to the invention according to various parameters.
  • FIG. 2 is a schematic representation of an embodiment of the invention.
  • a ferromagnetic layer (202) is coupled with an element (204) which is, in this embodiment, a layer of YMnÜ 3 in hexagonal phase, an example of a material that simultaneously presents antiferromagnetic order (AF) and ferroelectric order (FE).
  • AF antiferromagnetic order
  • FE ferroelectric order
  • the hexagonal phase of YMnO 3 has been used as an example of a biferroic material to create a layer that is - in this embodiment - the element of the invention.
  • the hexagonal phase of YMnO 3 is ferroelectric up to 900 K and presents antiferromagnetic order at low temperature (T N ⁇ 90 K).
  • T N ⁇ 90 K antiferromagnetic order at low temperature
  • the AF order of YMnO 3 is used to set the magnetic state of a ferromagnetic layer (FM) and exploit its ferroelectric properties and the anchor between the AF and FE orders to control the properties of the FM layer.
  • FM ferromagnetic layer
  • SHEET DS RE M DEADLINE RE M DEADLINE (Reala 26)
  • a layer of NiFe Permalloy, Py
  • Other materials such as CoFeB can be used as an alternative.
  • the exchange bias, H et> can be monitored and quantified by measuring the angular dependence of the electrical resistance of the FM layer while rotating the applied magnetic field, H 3 , in relation to the direction of the current.
  • the electrical resistance of the AMR sensor will vary if the H, * field present is modified.
  • the exchange between a multiferroic element (for example, YMnO 3 ) and an FM layer (for example, Py) could be controlled depending on the application of an electric field through the multiferroic element.
  • a multiferroic element for example, YMnO 3
  • an FM layer for example, Py
  • two metal electrodes 210 and 212 are necessary.
  • REPLACEMENT HCJA Rs ⁇ a CS
  • Multiferroic element for example, YMnOs
  • Pt and Py act as metal electrodes.
  • the growth of thin layers of hexagonal YMnO 3 (OOOl) with a thickness of 90 nm is carried out by laser ablation on SrTiO 3 (II l) substrates coated with a thin layer of Pt of thickness 8 nm in the electrode role metal.
  • This heterostructure is subsequently coated with a thin layer of Py (15 nm thickness).
  • X-ray diffraction spectra indicate that the layers of Pt and YMnO 3 are textured epitaxials (111) and (0001), respectively.
  • a mask can be used to partially cover the lower Pt electrode for future contact.
  • Hysteresis cycles can be measured to confirm the existence of the He b field acting on the Py.
  • the magnetization of the FM layer 202 can be changed sign by applying a sufficiently intense electric field.
  • HQJ ⁇ DU RcE ⁇ i 3 LOOP (Rule 26j
  • four (in-line) electrical contacts in the Py can be used for carrying out the electrical transport and anisotropic magnetoresistance measurements.
  • the exchange field of these embodiments and, consequently, the magnetization of the system can be strongly modified by an electric field.
  • the electrical resistance of the FM layer, for a given angle between the external magnetic field, Ha, and the measurement direction of the electric current is modified by the application of a given electric field.
  • Figure 4 shows experimental measurements performed in an embodiment of the invention: shows the dependence of the electrical resistance (R), at 5 K, of the Py FM layer at the angle ( ⁇ ) between the measured electrical current and an applied magnetic field (in the plane of the thin layer) of 50 Oe.
  • the biferroic - AF and FE - YMnO 3 in thin layer is used to control an FM layer with the ultimate goal of fully exploiting its FE character and, in particular, the hysteretic character.
  • This invention can be used to act on sensors based on AMR, GMR or MTJ-like architectures in spin-based electronics.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

L'invention concerne un dispositif magnéto-électrique et un procédé pour écrire des informations non volatiles dans ce dispositif. Le dispositif comprend au moins une première couche ferromagnétique (202) et un élément (204) couplé par exchange bias (champ d'échange) à la première couche ferromagnétique (202) au moins dans une zone à travers une interface (208), en vue d'une régulation de l'état magnétique de la couche ferromagnétique (202) dans la zone de couplage au moyen d'un champ électrique appliqué au moins à l'élément (204), ledit élément (204) comprenant un matériau à propriétés antiferromagnétiques et ferroélectriques couplées.
PCT/ES2007/000427 2007-07-13 2007-07-13 Dispositif magnéto-électrique et procédé pour écrire des informations non volatiles dans ce dispositif WO2009010595A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/ES2007/000427 WO2009010595A1 (fr) 2007-07-13 2007-07-13 Dispositif magnéto-électrique et procédé pour écrire des informations non volatiles dans ce dispositif

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/ES2007/000427 WO2009010595A1 (fr) 2007-07-13 2007-07-13 Dispositif magnéto-électrique et procédé pour écrire des informations non volatiles dans ce dispositif

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WO2009010595A1 true WO2009010595A1 (fr) 2009-01-22

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8300454B2 (en) 2010-09-17 2012-10-30 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US8310868B2 (en) 2010-09-17 2012-11-13 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US8358534B2 (en) 2010-09-17 2013-01-22 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US9666639B2 (en) 2010-09-17 2017-05-30 Micron Technology, Inc. Spin torque transfer memory cell structures and methods

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006103065A1 (fr) * 2005-03-30 2006-10-05 Universität Duisburg-Essen Element magnetoresistif, en particulier element de stockage ou element logique, et procede d'enregistrement d'informations sur un tel element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006103065A1 (fr) * 2005-03-30 2006-10-05 Universität Duisburg-Essen Element magnetoresistif, en particulier element de stockage ou element logique, et procede d'enregistrement d'informations sur un tel element

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
FIEBIG M. ET AL.: "Magnetoelectric effects in multiferroic manganites", JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, vol. 290-291, April 2005 (2005-04-01), pages 883 - 890, XP004799099, DOI: doi:10.1016/j.jmmm.2004.11.282 *
HARRIS A.B. AND LAWES G.: "Ferroelectricity in Incommensurate Magnets", ARXIV.ORG CORNELL UNIVERSITY LIBRARY, CONDESED MATTER. MATERIALS SCIENCE. ARXIV:COND-MAT/0508617V1, Retrieved from the Internet <URL:http://www.arxiv.org/abs/cond-mat/0508617v1> *
LOTTERSMOSER T. ET AL.: "Magnetic phase control by an electric field", NATURE, vol. 430, 29 July 2004 (2004-07-29), pages 541 - 544 *
WANG J. ET AL.: "Exitaxial BiFeO3 Multiferroic Thin Film Heterostructures", SCIENCE, vol. 299, no. 5631, 14 March 2003 (2003-03-14), pages 1719 - 1722, Retrieved from the Internet <URL:http://www.sciencemag.org/cgi/content/abstract/299/5613-1719?ck=nck> *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8300454B2 (en) 2010-09-17 2012-10-30 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US8310868B2 (en) 2010-09-17 2012-11-13 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US8358534B2 (en) 2010-09-17 2013-01-22 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US8472244B2 (en) 2010-09-17 2013-06-25 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US8767455B2 (en) 2010-09-17 2014-07-01 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US8804414B2 (en) 2010-09-17 2014-08-12 Micron Technology, Inc. Spin torque transfer memory cell structures and methods
US9666639B2 (en) 2010-09-17 2017-05-30 Micron Technology, Inc. Spin torque transfer memory cell structures and methods

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