WO2009005098A1 - 裏面入射型測距センサ及び測距装置 - Google Patents
裏面入射型測距センサ及び測距装置 Download PDFInfo
- Publication number
- WO2009005098A1 WO2009005098A1 PCT/JP2008/062005 JP2008062005W WO2009005098A1 WO 2009005098 A1 WO2009005098 A1 WO 2009005098A1 JP 2008062005 W JP2008062005 W JP 2008062005W WO 2009005098 A1 WO2009005098 A1 WO 2009005098A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- distance measuring
- distance
- back surface
- light
- incident type
- Prior art date
Links
- 230000002776 aggregation Effects 0.000 abstract 1
- 238000004220 aggregation Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
- G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Remote Sensing (AREA)
- Radar, Positioning & Navigation (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Measurement Of Optical Distance (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020097022741A KR101355283B1 (ko) | 2007-07-03 | 2008-07-02 | 이면 입사형 측거 센서 및 측거 장치 |
CN2008800233095A CN101688915B (zh) | 2007-07-03 | 2008-07-02 | 背面入射型测距传感器以及测距装置 |
US12/666,572 US8264673B2 (en) | 2007-07-03 | 2008-07-02 | Back-illuminated distance measuring sensor and distance measuring device |
EP08790809.1A EP2166373B1 (en) | 2007-07-03 | 2008-07-02 | Back surface incident type distance measuring sensor and distance measuring device |
US13/585,103 US8665422B2 (en) | 2007-07-03 | 2012-08-14 | Back-illuminated distance measuring sensor and distance measuring device |
US13/585,127 US8477292B2 (en) | 2007-07-03 | 2012-08-14 | Back-illuminated distance measuring sensor and distance measuring device |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-175636 | 2007-07-03 | ||
JP2007175636A JP4971890B2 (ja) | 2007-07-03 | 2007-07-03 | 裏面入射型測距センサ及び測距装置 |
JP2007175638A JP4971891B2 (ja) | 2007-07-03 | 2007-07-03 | 裏面入射型測距センサ及び測距装置 |
JP2007175639A JP4971892B2 (ja) | 2007-07-03 | 2007-07-03 | 裏面入射型測距センサ及び測距装置 |
JP2007-175639 | 2007-07-03 | ||
JP2007-175638 | 2007-07-03 |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/666,572 A-371-Of-International US8264673B2 (en) | 2007-07-03 | 2008-07-02 | Back-illuminated distance measuring sensor and distance measuring device |
US13/585,127 Continuation US8477292B2 (en) | 2007-07-03 | 2012-08-14 | Back-illuminated distance measuring sensor and distance measuring device |
US13/585,103 Continuation US8665422B2 (en) | 2007-07-03 | 2012-08-14 | Back-illuminated distance measuring sensor and distance measuring device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009005098A1 true WO2009005098A1 (ja) | 2009-01-08 |
Family
ID=40226141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/062005 WO2009005098A1 (ja) | 2007-07-03 | 2008-07-02 | 裏面入射型測距センサ及び測距装置 |
Country Status (5)
Country | Link |
---|---|
US (3) | US8264673B2 (ja) |
EP (3) | EP2924464B1 (ja) |
KR (1) | KR101355283B1 (ja) |
CN (2) | CN101688915B (ja) |
WO (1) | WO2009005098A1 (ja) |
Cited By (6)
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EP2284894A1 (fr) * | 2009-08-12 | 2011-02-16 | STmicroelectronics SA | Capteur d'images éclairé par la face arrière protégé des rayons infrarouges |
JP2011205222A (ja) * | 2010-03-24 | 2011-10-13 | Toshiba Corp | カメラモジュール |
EP2508916A1 (en) * | 2009-11-30 | 2012-10-10 | Hamamatsu Photonics K.K. | Range sensor and range image sensor |
US8304727B2 (en) | 2009-02-06 | 2012-11-06 | Siliconfile Technologies Inc. | Image sensor capable of judging proximity to subject |
JPWO2020017343A1 (ja) * | 2018-07-18 | 2021-08-19 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および測距モジュール |
WO2022158570A1 (ja) * | 2021-01-21 | 2022-07-28 | 凸版印刷株式会社 | 距離画像撮像装置、及び距離画像撮像方法 |
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GB2477083A (en) * | 2010-01-13 | 2011-07-27 | Cmosis Nv | Pixel structure with multiple transfer gates to improve dynamic range |
JP5726434B2 (ja) * | 2010-04-14 | 2015-06-03 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
US9076706B2 (en) | 2011-01-07 | 2015-07-07 | Samsung Electronics Co., Ltd. | Image sensor based on depth pixel structure |
JP2013084744A (ja) * | 2011-10-07 | 2013-05-09 | Sony Corp | 固体撮像素子および電子機器 |
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DE102013015403B4 (de) | 2012-09-20 | 2021-11-25 | Infineon Technologies Ag | Herstellung eines Bildwandlergeräts und Bildwandlergerät |
JP6457822B2 (ja) * | 2015-01-21 | 2019-01-23 | キヤノン株式会社 | 光電変換装置及び撮像システム |
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US10761599B2 (en) | 2015-08-04 | 2020-09-01 | Artilux, Inc. | Eye gesture tracking |
US10707260B2 (en) | 2015-08-04 | 2020-07-07 | Artilux, Inc. | Circuit for operating a multi-gate VIS/IR photodiode |
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US11056528B2 (en) | 2016-10-24 | 2021-07-06 | Invisage Technologies, Inc. | Image sensor with phase-sensitive pixels |
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US11105928B2 (en) | 2018-02-23 | 2021-08-31 | Artilux, Inc. | Light-sensing apparatus and light-sensing method thereof |
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JP7054639B2 (ja) * | 2018-03-16 | 2022-04-14 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および電子機器 |
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US10854770B2 (en) | 2018-05-07 | 2020-12-01 | Artilux, Inc. | Avalanche photo-transistor |
US10969877B2 (en) | 2018-05-08 | 2021-04-06 | Artilux, Inc. | Display apparatus |
FR3083001A1 (fr) * | 2018-06-20 | 2019-12-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Capteur d'images |
CN110739325A (zh) * | 2018-07-18 | 2020-01-31 | 索尼半导体解决方案公司 | 受光元件以及测距模块 |
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TWI833846B (zh) * | 2018-11-27 | 2024-03-01 | 晶元光電股份有限公司 | 光學感測模組 |
US11574942B2 (en) | 2018-12-12 | 2023-02-07 | Artilux, Inc. | Semiconductor device with low dark noise |
WO2021041742A1 (en) | 2019-08-28 | 2021-03-04 | Artilux, Inc. | Photo-detecting apparatus with low dark current |
KR20220009223A (ko) | 2020-07-15 | 2022-01-24 | 삼성전자주식회사 | 멀티-탭 구조를 갖는 거리 픽셀 및 이를 포함하는 비행 거리 센서 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0653615A (ja) * | 1992-08-03 | 1994-02-25 | Seiko Epson Corp | 光センシング装置および光センシング装置用半導体レーザ |
JP2003086827A (ja) * | 2001-09-12 | 2003-03-20 | Hamamatsu Photonics Kk | ホトダイオードアレイ、固体撮像装置、及び、放射線検出器 |
JP2005235893A (ja) | 2004-02-18 | 2005-09-02 | National Univ Corp Shizuoka Univ | 光飛行時間型距離センサ |
WO2007026779A1 (ja) * | 2005-08-30 | 2007-03-08 | National University Corporation Shizuoka University | 半導体測距素子及び固体撮像装置 |
JP2008122342A (ja) * | 2006-11-15 | 2008-05-29 | Hamamatsu Photonics Kk | 距離画像センサ |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4838295A (en) | 1986-08-21 | 1989-06-13 | Airsensors, Inc. | System for controlling mass flow rates of two gases |
JPH02246380A (ja) | 1989-03-20 | 1990-10-02 | Fujitsu Ltd | ホトダイオード |
JPH07153986A (ja) | 1993-12-01 | 1995-06-16 | Fujitsu Ltd | 赤外線検知装置 |
JPH0945886A (ja) | 1995-08-01 | 1997-02-14 | Sharp Corp | 増幅型半導体撮像装置 |
EP1280207B1 (en) * | 2000-04-04 | 2017-03-15 | Hamamatsu Photonics K.K. | Semiconductor energy detector |
JP4478012B2 (ja) * | 2002-05-10 | 2010-06-09 | 浜松ホトニクス株式会社 | 裏面照射型ホトダイオードアレイ及びその製造方法 |
JP4123415B2 (ja) | 2002-05-20 | 2008-07-23 | ソニー株式会社 | 固体撮像装置 |
GB2389960A (en) * | 2002-06-20 | 2003-12-24 | Suisse Electronique Microtech | Four-tap demodulation pixel |
DE60319228T2 (de) * | 2002-07-15 | 2009-02-12 | Matsushita Electric Works, Ltd., Kadoma | Lichtempfangsvorrichtung mit regelbarer empfindlichkeit und gerät zur detektion der räumlichen information welche diese verwendet |
US8129813B2 (en) * | 2003-09-18 | 2012-03-06 | Ic-Haus Gmbh | Optoelectronic sensor and device for 3D distance measurement |
EP1624490B1 (en) * | 2004-08-04 | 2018-10-03 | Heptagon Micro Optics Pte. Ltd. | Large-area pixel for use in an image sensor |
JP4725095B2 (ja) | 2004-12-15 | 2011-07-13 | ソニー株式会社 | 裏面入射型固体撮像装置及びその製造方法 |
ATE412882T1 (de) * | 2005-08-12 | 2008-11-15 | Mesa Imaging Ag | Hochempfindliches, schnelles pixel für anwendung in einem bildsensor |
CA2631468C (en) * | 2006-10-18 | 2013-07-09 | Matsushita Electric Works, Ltd. | Spatial information detecting apparatus |
JP5089289B2 (ja) * | 2007-08-22 | 2012-12-05 | 浜松ホトニクス株式会社 | 測距センサ及び測距装置 |
-
2008
- 2008-07-02 US US12/666,572 patent/US8264673B2/en active Active
- 2008-07-02 EP EP15165660.0A patent/EP2924464B1/en active Active
- 2008-07-02 KR KR1020097022741A patent/KR101355283B1/ko active IP Right Grant
- 2008-07-02 WO PCT/JP2008/062005 patent/WO2009005098A1/ja active Application Filing
- 2008-07-02 CN CN2008800233095A patent/CN101688915B/zh active Active
- 2008-07-02 EP EP15165661.8A patent/EP2924465B1/en active Active
- 2008-07-02 EP EP08790809.1A patent/EP2166373B1/en active Active
- 2008-07-02 CN CN201210102539.9A patent/CN102623473B/zh active Active
-
2012
- 2012-08-14 US US13/585,127 patent/US8477292B2/en active Active
- 2012-08-14 US US13/585,103 patent/US8665422B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0653615A (ja) * | 1992-08-03 | 1994-02-25 | Seiko Epson Corp | 光センシング装置および光センシング装置用半導体レーザ |
JP2003086827A (ja) * | 2001-09-12 | 2003-03-20 | Hamamatsu Photonics Kk | ホトダイオードアレイ、固体撮像装置、及び、放射線検出器 |
JP2005235893A (ja) | 2004-02-18 | 2005-09-02 | National Univ Corp Shizuoka Univ | 光飛行時間型距離センサ |
WO2007026779A1 (ja) * | 2005-08-30 | 2007-03-08 | National University Corporation Shizuoka University | 半導体測距素子及び固体撮像装置 |
JP2008122342A (ja) * | 2006-11-15 | 2008-05-29 | Hamamatsu Photonics Kk | 距離画像センサ |
Non-Patent Citations (1)
Title |
---|
See also references of EP2166373A4 |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8304727B2 (en) | 2009-02-06 | 2012-11-06 | Siliconfile Technologies Inc. | Image sensor capable of judging proximity to subject |
CN101800853B (zh) * | 2009-02-06 | 2013-03-27 | (株)赛丽康 | 能够判别与物体的邻近度的图像传感器 |
FR2949173A1 (fr) * | 2009-08-12 | 2011-02-18 | St Microelectronics Sa | Capteur d'images eclaire par la face arriere protege des rayons infrarouges |
EP2284894A1 (fr) * | 2009-08-12 | 2011-02-16 | STmicroelectronics SA | Capteur d'images éclairé par la face arrière protégé des rayons infrarouges |
EP2533288A3 (en) * | 2009-11-30 | 2013-05-01 | Hamamatsu Photonics K.K. | Range sensor and range image sensor |
EP2508916A1 (en) * | 2009-11-30 | 2012-10-10 | Hamamatsu Photonics K.K. | Range sensor and range image sensor |
EP2508916A4 (en) * | 2009-11-30 | 2013-05-01 | Hamamatsu Photonics Kk | DISTANCE SENSOR AND DISTANCE IMAGE SENSOR |
US8598674B2 (en) | 2009-11-30 | 2013-12-03 | Hamamatsu Photonics K.K. | Range sensor and range image sensor |
US8653619B2 (en) | 2009-11-30 | 2014-02-18 | Hamamatsu Photonics K.K. | Range sensor and range image sensor |
JP2011205222A (ja) * | 2010-03-24 | 2011-10-13 | Toshiba Corp | カメラモジュール |
US8669631B2 (en) | 2010-03-24 | 2014-03-11 | Kabushiki Kaisha Toshiba | Solid state imaging device having a back surface impurity layer |
JPWO2020017343A1 (ja) * | 2018-07-18 | 2021-08-19 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および測距モジュール |
JP7395462B2 (ja) | 2018-07-18 | 2023-12-11 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および測距モジュール |
WO2022158570A1 (ja) * | 2021-01-21 | 2022-07-28 | 凸版印刷株式会社 | 距離画像撮像装置、及び距離画像撮像方法 |
Also Published As
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EP2166373B1 (en) | 2015-09-09 |
EP2924464A2 (en) | 2015-09-30 |
US20100201966A1 (en) | 2010-08-12 |
US20120307232A1 (en) | 2012-12-06 |
EP2924465A3 (en) | 2015-10-21 |
US8665422B2 (en) | 2014-03-04 |
EP2924465A2 (en) | 2015-09-30 |
KR20100033368A (ko) | 2010-03-29 |
EP2924464B1 (en) | 2016-12-28 |
US8264673B2 (en) | 2012-09-11 |
EP2166373A1 (en) | 2010-03-24 |
EP2924465B1 (en) | 2017-11-29 |
KR101355283B1 (ko) | 2014-01-27 |
US8477292B2 (en) | 2013-07-02 |
CN102623473B (zh) | 2015-09-09 |
CN101688915B (zh) | 2012-11-21 |
EP2924464A3 (en) | 2015-10-28 |
CN101688915A (zh) | 2010-03-31 |
US20120307231A1 (en) | 2012-12-06 |
EP2166373A4 (en) | 2014-07-23 |
CN102623473A (zh) | 2012-08-01 |
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