WO2009005098A1 - 裏面入射型測距センサ及び測距装置 - Google Patents
裏面入射型測距センサ及び測距装置 Download PDFInfo
- Publication number
- WO2009005098A1 WO2009005098A1 PCT/JP2008/062005 JP2008062005W WO2009005098A1 WO 2009005098 A1 WO2009005098 A1 WO 2009005098A1 JP 2008062005 W JP2008062005 W JP 2008062005W WO 2009005098 A1 WO2009005098 A1 WO 2009005098A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- distance measuring
- distance
- back surface
- light
- incident type
- Prior art date
Links
- 230000002776 aggregation Effects 0.000 abstract 1
- 238000004220 aggregation Methods 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
- G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/486—Receivers
- G01S7/4861—Circuits for detection, sampling, integration or read-out
- G01S7/4863—Detector arrays, e.g. charge-transfer gates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/0557—Disposition the external layer being disposed on a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
Abstract
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008800233095A CN101688915B (zh) | 2007-07-03 | 2008-07-02 | 背面入射型测距传感器以及测距装置 |
US12/666,572 US8264673B2 (en) | 2007-07-03 | 2008-07-02 | Back-illuminated distance measuring sensor and distance measuring device |
KR1020097022741A KR101355283B1 (ko) | 2007-07-03 | 2008-07-02 | 이면 입사형 측거 센서 및 측거 장치 |
EP08790809.1A EP2166373B1 (en) | 2007-07-03 | 2008-07-02 | Back surface incident type distance measuring sensor and distance measuring device |
US13/585,127 US8477292B2 (en) | 2007-07-03 | 2012-08-14 | Back-illuminated distance measuring sensor and distance measuring device |
US13/585,103 US8665422B2 (en) | 2007-07-03 | 2012-08-14 | Back-illuminated distance measuring sensor and distance measuring device |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-175638 | 2007-07-03 | ||
JP2007175636A JP4971890B2 (ja) | 2007-07-03 | 2007-07-03 | 裏面入射型測距センサ及び測距装置 |
JP2007175639A JP4971892B2 (ja) | 2007-07-03 | 2007-07-03 | 裏面入射型測距センサ及び測距装置 |
JP2007-175636 | 2007-07-03 | ||
JP2007-175639 | 2007-07-03 | ||
JP2007175638A JP4971891B2 (ja) | 2007-07-03 | 2007-07-03 | 裏面入射型測距センサ及び測距装置 |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/666,572 A-371-Of-International US8264673B2 (en) | 2007-07-03 | 2008-07-02 | Back-illuminated distance measuring sensor and distance measuring device |
US13/585,127 Continuation US8477292B2 (en) | 2007-07-03 | 2012-08-14 | Back-illuminated distance measuring sensor and distance measuring device |
US13/585,103 Continuation US8665422B2 (en) | 2007-07-03 | 2012-08-14 | Back-illuminated distance measuring sensor and distance measuring device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009005098A1 true WO2009005098A1 (ja) | 2009-01-08 |
Family
ID=40226141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/062005 WO2009005098A1 (ja) | 2007-07-03 | 2008-07-02 | 裏面入射型測距センサ及び測距装置 |
Country Status (5)
Country | Link |
---|---|
US (3) | US8264673B2 (ja) |
EP (3) | EP2924465B1 (ja) |
KR (1) | KR101355283B1 (ja) |
CN (2) | CN101688915B (ja) |
WO (1) | WO2009005098A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2284894A1 (fr) * | 2009-08-12 | 2011-02-16 | STmicroelectronics SA | Capteur d'images éclairé par la face arrière protégé des rayons infrarouges |
JP2011205222A (ja) * | 2010-03-24 | 2011-10-13 | Toshiba Corp | カメラモジュール |
EP2508916A1 (en) * | 2009-11-30 | 2012-10-10 | Hamamatsu Photonics K.K. | Range sensor and range image sensor |
US8304727B2 (en) | 2009-02-06 | 2012-11-06 | Siliconfile Technologies Inc. | Image sensor capable of judging proximity to subject |
JPWO2020017343A1 (ja) * | 2018-07-18 | 2021-08-19 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および測距モジュール |
WO2022158570A1 (ja) * | 2021-01-21 | 2022-07-28 | 凸版印刷株式会社 | 距離画像撮像装置、及び距離画像撮像方法 |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5740413B2 (ja) * | 2010-01-06 | 2015-06-24 | メサ・イメージング・アー・ゲーMesa Imaging Ag | ピクセルアレイと記憶アレイを別個に備える復調センサ |
GB2477083A (en) * | 2010-01-13 | 2011-07-27 | Cmosis Nv | Pixel structure with multiple transfer gates to improve dynamic range |
JP5726434B2 (ja) * | 2010-04-14 | 2015-06-03 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
US9076706B2 (en) | 2011-01-07 | 2015-07-07 | Samsung Electronics Co., Ltd. | Image sensor based on depth pixel structure |
JP2013084744A (ja) * | 2011-10-07 | 2013-05-09 | Sony Corp | 固体撮像素子および電子機器 |
JP5909421B2 (ja) | 2012-08-01 | 2016-04-26 | 浜松ホトニクス株式会社 | 複合センサ及び複合センサモジュール |
DE102013015403B4 (de) * | 2012-09-20 | 2021-11-25 | Infineon Technologies Ag | Herstellung eines Bildwandlergeräts und Bildwandlergerät |
JP6457822B2 (ja) * | 2015-01-21 | 2019-01-23 | キヤノン株式会社 | 光電変換装置及び撮像システム |
CN108352393B (zh) | 2015-07-23 | 2022-09-16 | 光程研创股份有限公司 | 高效宽光谱传感器 |
US10761599B2 (en) | 2015-08-04 | 2020-09-01 | Artilux, Inc. | Eye gesture tracking |
US10861888B2 (en) | 2015-08-04 | 2020-12-08 | Artilux, Inc. | Silicon germanium imager with photodiode in trench |
EP3370259B1 (en) | 2015-08-04 | 2020-03-11 | Artilux Inc. | Germanium-silicon light sensing apparatus |
US10707260B2 (en) | 2015-08-04 | 2020-07-07 | Artilux, Inc. | Circuit for operating a multi-gate VIS/IR photodiode |
US9893112B2 (en) | 2015-08-27 | 2018-02-13 | Artilux Corporation | Wide spectrum optical sensor |
US10418407B2 (en) | 2015-11-06 | 2019-09-17 | Artilux, Inc. | High-speed light sensing apparatus III |
US10739443B2 (en) | 2015-11-06 | 2020-08-11 | Artilux, Inc. | High-speed light sensing apparatus II |
US10254389B2 (en) | 2015-11-06 | 2019-04-09 | Artilux Corporation | High-speed light sensing apparatus |
US10741598B2 (en) | 2015-11-06 | 2020-08-11 | Atrilux, Inc. | High-speed light sensing apparatus II |
US10886309B2 (en) | 2015-11-06 | 2021-01-05 | Artilux, Inc. | High-speed light sensing apparatus II |
CN105428379B (zh) * | 2015-12-09 | 2019-11-05 | 格科微电子(上海)有限公司 | 提高背照式红外图像传感器性能的方法 |
JP6659448B2 (ja) | 2016-05-02 | 2020-03-04 | 浜松ホトニクス株式会社 | 距離センサ及び距離センサの駆動方法 |
US11056528B2 (en) | 2016-10-24 | 2021-07-06 | Invisage Technologies, Inc. | Image sensor with phase-sensitive pixels |
EP3318891A1 (de) * | 2016-11-04 | 2018-05-09 | Espros Photonics AG | Empfangsvorrichtung, sensorvorrichtung sowie verfahren zur distanzbestimmung |
US11105928B2 (en) | 2018-02-23 | 2021-08-31 | Artilux, Inc. | Light-sensing apparatus and light-sensing method thereof |
WO2019165220A1 (en) | 2018-02-23 | 2019-08-29 | Artilux, Inc. | Photo-detecting apparatus and photo-detecting method thereof |
US11482553B2 (en) | 2018-02-23 | 2022-10-25 | Artilux, Inc. | Photo-detecting apparatus with subpixels |
JP7054639B2 (ja) | 2018-03-16 | 2022-04-14 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および電子機器 |
WO2019199691A1 (en) | 2018-04-08 | 2019-10-17 | Artilux, Inc. | Photo-detecting apparatus |
US10854770B2 (en) | 2018-05-07 | 2020-12-01 | Artilux, Inc. | Avalanche photo-transistor |
US10969877B2 (en) | 2018-05-08 | 2021-04-06 | Artilux, Inc. | Display apparatus |
FR3083001A1 (fr) * | 2018-06-20 | 2019-12-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Capteur d'images |
JP2020013907A (ja) * | 2018-07-18 | 2020-01-23 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および測距モジュール |
JP7362198B2 (ja) * | 2018-07-18 | 2023-10-17 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子、測距モジュール、および、電子機器 |
CN110739325A (zh) * | 2018-07-18 | 2020-01-31 | 索尼半导体解决方案公司 | 受光元件以及测距模块 |
US11574942B2 (en) | 2018-12-12 | 2023-02-07 | Artilux, Inc. | Semiconductor device with low dark noise |
WO2021041742A1 (en) | 2019-08-28 | 2021-03-04 | Artilux, Inc. | Photo-detecting apparatus with low dark current |
KR20220009223A (ko) | 2020-07-15 | 2022-01-24 | 삼성전자주식회사 | 멀티-탭 구조를 갖는 거리 픽셀 및 이를 포함하는 비행 거리 센서 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0653615A (ja) * | 1992-08-03 | 1994-02-25 | Seiko Epson Corp | 光センシング装置および光センシング装置用半導体レーザ |
JP2003086827A (ja) * | 2001-09-12 | 2003-03-20 | Hamamatsu Photonics Kk | ホトダイオードアレイ、固体撮像装置、及び、放射線検出器 |
JP2005235893A (ja) | 2004-02-18 | 2005-09-02 | National Univ Corp Shizuoka Univ | 光飛行時間型距離センサ |
WO2007026779A1 (ja) * | 2005-08-30 | 2007-03-08 | National University Corporation Shizuoka University | 半導体測距素子及び固体撮像装置 |
JP2008122342A (ja) * | 2006-11-15 | 2008-05-29 | Hamamatsu Photonics Kk | 距離画像センサ |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4838295A (en) | 1986-08-21 | 1989-06-13 | Airsensors, Inc. | System for controlling mass flow rates of two gases |
JPH02246380A (ja) | 1989-03-20 | 1990-10-02 | Fujitsu Ltd | ホトダイオード |
JPH07153986A (ja) | 1993-12-01 | 1995-06-16 | Fujitsu Ltd | 赤外線検知装置 |
JPH0945886A (ja) | 1995-08-01 | 1997-02-14 | Sharp Corp | 増幅型半導体撮像装置 |
EP1280207B1 (en) * | 2000-04-04 | 2017-03-15 | Hamamatsu Photonics K.K. | Semiconductor energy detector |
JP4478012B2 (ja) * | 2002-05-10 | 2010-06-09 | 浜松ホトニクス株式会社 | 裏面照射型ホトダイオードアレイ及びその製造方法 |
JP4123415B2 (ja) | 2002-05-20 | 2008-07-23 | ソニー株式会社 | 固体撮像装置 |
GB2389960A (en) * | 2002-06-20 | 2003-12-24 | Suisse Electronique Microtech | Four-tap demodulation pixel |
EP1521981B1 (en) * | 2002-07-15 | 2008-02-20 | Matsushita Electric Works, Ltd. | Light receiving device with controllable sensitivity and spatial information detecting apparatus using the same |
US8129813B2 (en) * | 2003-09-18 | 2012-03-06 | Ic-Haus Gmbh | Optoelectronic sensor and device for 3D distance measurement |
EP1624490B1 (en) * | 2004-08-04 | 2018-10-03 | Heptagon Micro Optics Pte. Ltd. | Large-area pixel for use in an image sensor |
JP4725095B2 (ja) | 2004-12-15 | 2011-07-13 | ソニー株式会社 | 裏面入射型固体撮像装置及びその製造方法 |
DE602005010696D1 (de) * | 2005-08-12 | 2008-12-11 | Mesa Imaging Ag | Hochempfindliches, schnelles Pixel für Anwendung in einem Bildsensor |
US7755743B2 (en) * | 2006-10-18 | 2010-07-13 | Panasonic Electric Works Co., Ltd. | Spatial information detecting apparatus |
JP5089289B2 (ja) * | 2007-08-22 | 2012-12-05 | 浜松ホトニクス株式会社 | 測距センサ及び測距装置 |
-
2008
- 2008-07-02 WO PCT/JP2008/062005 patent/WO2009005098A1/ja active Application Filing
- 2008-07-02 CN CN2008800233095A patent/CN101688915B/zh active Active
- 2008-07-02 US US12/666,572 patent/US8264673B2/en active Active
- 2008-07-02 EP EP15165661.8A patent/EP2924465B1/en active Active
- 2008-07-02 EP EP15165660.0A patent/EP2924464B1/en active Active
- 2008-07-02 CN CN201210102539.9A patent/CN102623473B/zh active Active
- 2008-07-02 EP EP08790809.1A patent/EP2166373B1/en active Active
- 2008-07-02 KR KR1020097022741A patent/KR101355283B1/ko active IP Right Grant
-
2012
- 2012-08-14 US US13/585,127 patent/US8477292B2/en active Active
- 2012-08-14 US US13/585,103 patent/US8665422B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0653615A (ja) * | 1992-08-03 | 1994-02-25 | Seiko Epson Corp | 光センシング装置および光センシング装置用半導体レーザ |
JP2003086827A (ja) * | 2001-09-12 | 2003-03-20 | Hamamatsu Photonics Kk | ホトダイオードアレイ、固体撮像装置、及び、放射線検出器 |
JP2005235893A (ja) | 2004-02-18 | 2005-09-02 | National Univ Corp Shizuoka Univ | 光飛行時間型距離センサ |
WO2007026779A1 (ja) * | 2005-08-30 | 2007-03-08 | National University Corporation Shizuoka University | 半導体測距素子及び固体撮像装置 |
JP2008122342A (ja) * | 2006-11-15 | 2008-05-29 | Hamamatsu Photonics Kk | 距離画像センサ |
Non-Patent Citations (1)
Title |
---|
See also references of EP2166373A4 |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8304727B2 (en) | 2009-02-06 | 2012-11-06 | Siliconfile Technologies Inc. | Image sensor capable of judging proximity to subject |
CN101800853B (zh) * | 2009-02-06 | 2013-03-27 | (株)赛丽康 | 能够判别与物体的邻近度的图像传感器 |
FR2949173A1 (fr) * | 2009-08-12 | 2011-02-18 | St Microelectronics Sa | Capteur d'images eclaire par la face arriere protege des rayons infrarouges |
EP2284894A1 (fr) * | 2009-08-12 | 2011-02-16 | STmicroelectronics SA | Capteur d'images éclairé par la face arrière protégé des rayons infrarouges |
EP2533288A3 (en) * | 2009-11-30 | 2013-05-01 | Hamamatsu Photonics K.K. | Range sensor and range image sensor |
EP2508916A1 (en) * | 2009-11-30 | 2012-10-10 | Hamamatsu Photonics K.K. | Range sensor and range image sensor |
EP2508916A4 (en) * | 2009-11-30 | 2013-05-01 | Hamamatsu Photonics Kk | DISTANCE SENSOR AND DISTANCE IMAGE SENSOR |
US8598674B2 (en) | 2009-11-30 | 2013-12-03 | Hamamatsu Photonics K.K. | Range sensor and range image sensor |
US8653619B2 (en) | 2009-11-30 | 2014-02-18 | Hamamatsu Photonics K.K. | Range sensor and range image sensor |
JP2011205222A (ja) * | 2010-03-24 | 2011-10-13 | Toshiba Corp | カメラモジュール |
US8669631B2 (en) | 2010-03-24 | 2014-03-11 | Kabushiki Kaisha Toshiba | Solid state imaging device having a back surface impurity layer |
JPWO2020017343A1 (ja) * | 2018-07-18 | 2021-08-19 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および測距モジュール |
JP7395462B2 (ja) | 2018-07-18 | 2023-12-11 | ソニーセミコンダクタソリューションズ株式会社 | 受光素子および測距モジュール |
WO2022158570A1 (ja) * | 2021-01-21 | 2022-07-28 | 凸版印刷株式会社 | 距離画像撮像装置、及び距離画像撮像方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101688915A (zh) | 2010-03-31 |
EP2924464A2 (en) | 2015-09-30 |
US8477292B2 (en) | 2013-07-02 |
EP2166373A4 (en) | 2014-07-23 |
CN102623473B (zh) | 2015-09-09 |
KR101355283B1 (ko) | 2014-01-27 |
CN102623473A (zh) | 2012-08-01 |
EP2166373B1 (en) | 2015-09-09 |
US20120307232A1 (en) | 2012-12-06 |
EP2924464A3 (en) | 2015-10-28 |
KR20100033368A (ko) | 2010-03-29 |
US20120307231A1 (en) | 2012-12-06 |
US8264673B2 (en) | 2012-09-11 |
EP2924465A3 (en) | 2015-10-21 |
EP2924465B1 (en) | 2017-11-29 |
CN101688915B (zh) | 2012-11-21 |
EP2166373A1 (en) | 2010-03-24 |
US8665422B2 (en) | 2014-03-04 |
EP2924464B1 (en) | 2016-12-28 |
EP2924465A2 (en) | 2015-09-30 |
US20100201966A1 (en) | 2010-08-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2009005098A1 (ja) | 裏面入射型測距センサ及び測距装置 | |
CN106911888B (zh) | 一种装置 | |
CN104051483B (zh) | 深度像素和包括该深度像素的三维图像传感器 | |
TWI706152B (zh) | 用於距離量測及/或多維成像之光電模組,以及獲得距離或三維資料之方法 | |
US20120133955A1 (en) | Application using a single photon avalanche diode (spad) | |
US9316735B2 (en) | Proximity detection apparatus and associated methods having single photon avalanche diodes for determining a quality metric based upon the number of events | |
ATE412882T1 (de) | Hochempfindliches, schnelles pixel für anwendung in einem bildsensor | |
WO2011065279A1 (ja) | 距離センサ及び距離画像センサ | |
TW201140111A (en) | Optical ranging sensor and electronic equipment | |
EP2091039A3 (en) | Photo sensor and flat panel display device using thereof | |
WO2008141919A3 (de) | Vorrichtung zur lichtdetektion in einem scanmikroskop | |
CA2747316C (en) | Laser receiver for detecting a relative position | |
US9562922B2 (en) | Light sensor and electronic device | |
EP2535686A3 (en) | Optical encoder including displacement sensing normal to the encoder scale grating surface | |
WO2009034825A1 (ja) | 半導体単結晶製造装置における位置計測装置および位置計測方法 | |
CN102494779A (zh) | 海水表面温度红外测量系统及测量方法 | |
EP2199807A3 (en) | Sensor device | |
US11579291B2 (en) | Optical ranging system having multi-mode operation using short and long pulses | |
US8749765B2 (en) | Application using a single photon avalanche diode (SPAD) | |
Shi et al. | Track image acquisition based on the signal device of the photoelectric encoder | |
CN208140286U (zh) | 一种基于线阵ccd的数字差分式张力传感器 | |
CN104034459A (zh) | 光学柔性二维切向力触觉传感器 | |
CN111156912B (zh) | 一种基于柔性光电纳米薄膜的自驱动应变传感器 | |
CN202522195U (zh) | 一种高度测量仪 | |
JP2012057987A (ja) | 距離センサ及び距離画像センサ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200880023309.5 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08790809 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20097022741 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12666572 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2008790809 Country of ref document: EP |