WO2009005014A1 - Resist stripping composition - Google Patents

Resist stripping composition Download PDF

Info

Publication number
WO2009005014A1
WO2009005014A1 PCT/JP2008/061763 JP2008061763W WO2009005014A1 WO 2009005014 A1 WO2009005014 A1 WO 2009005014A1 JP 2008061763 W JP2008061763 W JP 2008061763W WO 2009005014 A1 WO2009005014 A1 WO 2009005014A1
Authority
WO
WIPO (PCT)
Prior art keywords
resist stripping
stripping composition
specific
ether
amide
Prior art date
Application number
PCT/JP2008/061763
Other languages
French (fr)
Japanese (ja)
Inventor
Hiromu Taguchi
Masanao Sumita
Original Assignee
Toagosei Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toagosei Co., Ltd. filed Critical Toagosei Co., Ltd.
Publication of WO2009005014A1 publication Critical patent/WO2009005014A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02—Inorganic compounds ; Elemental compounds
    • C11D3/04—Water-soluble compounds
    • C11D3/046—Salts
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • C11D2111/22—

Abstract

Disclosed is a resist stripping composition which takes a liquid form at a working temperature, hardly causes a metal (e.g., copper) to corrode, is easy to be filtered, and can be re-used readily. The resist stripping composition comprises a mixture of at least one member selected from a cyclic ester having a 3- to 6-membered ring (e.g., ethylene carbonate, propylene carbonate), a ketone having a lower alkyl group (e.g., acetone, methyl ethyl ketone) and a specific alkylene glycol monoalkyl ether (e.g., ethylene glycol monoethyl ether, diethylene glycol monobutyl ether), and a specific cyclic amide (e.g., N-methyl-2-pyrrolidone) or a specific linear amide (e.g., N,N-dimethylacetoamide, N,N-diethylacetoamide).
PCT/JP2008/061763 2007-07-03 2008-06-27 Resist stripping composition WO2009005014A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-175640 2007-07-03
JP2007175640A JP2009014938A (en) 2007-07-03 2007-07-03 Resist release agent composition

Publications (1)

Publication Number Publication Date
WO2009005014A1 true WO2009005014A1 (en) 2009-01-08

Family

ID=40226060

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061763 WO2009005014A1 (en) 2007-07-03 2008-06-27 Resist stripping composition

Country Status (5)

Country Link
JP (1) JP2009014938A (en)
KR (1) KR20100030617A (en)
CN (1) CN101669072A (en)
TW (1) TW200921302A (en)
WO (1) WO2009005014A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9360761B2 (en) 2009-08-25 2016-06-07 Ltc Co., Ltd. Photoresist stripping composition for manufacturing LCD
JP2020531596A (en) * 2017-07-06 2020-11-05 ダウ グローバル テクノロジーズ エルエルシー Combination of amides for cleaning and stripping electronic components
WO2021049208A1 (en) * 2019-09-09 2021-03-18 富士フイルム株式会社 Treatment liquid, kit, treatment liquid production method, substrate cleaning method, and substrate treatment method

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011031028A2 (en) * 2009-09-09 2011-03-17 Dongwoo Fine-Chem Co., Ltd. Resist stripper composition for forming copper-based wiring
KR101169332B1 (en) * 2010-05-12 2012-07-30 주식회사 이엔에프테크놀로지 Photoresist stripper composition
KR102021158B1 (en) * 2012-06-26 2019-09-11 노무라마이크로사이엔스가부시키가이샤 Resist stripping agent
KR102081710B1 (en) * 2012-07-31 2020-02-28 세메스 주식회사 Apparatus and method fdr cleaning substrates
KR101595977B1 (en) * 2013-03-07 2016-02-19 주식회사 엘지화학 Stripper composition for removing photoresist and stripping mthod of photoresist using the same
CN103336412B (en) * 2013-07-03 2017-02-08 北京科华微电子材料有限公司 Novel photoresist stripper and application technology thereof
CN105579907B (en) * 2013-09-25 2019-12-17 东京应化工业株式会社 Radiation-sensitive composition and pattern production method
JP6228796B2 (en) * 2013-09-26 2017-11-08 東京応化工業株式会社 Resist composition and resist pattern forming method
KR102213779B1 (en) * 2014-08-26 2021-02-08 동우 화인켐 주식회사 Resist stripper composition and a method of stripping resist using the same
CN109075035B (en) * 2016-04-28 2023-06-13 富士胶片株式会社 Treatment liquid and treatment liquid container
CN109313400A (en) * 2016-07-28 2019-02-05 野村微科学股份有限公司 Anticorrosive additive stripping liquid controlling composition
CN115685700A (en) * 2021-07-27 2023-02-03 元瀚材料股份有限公司 Environmentally friendly photoresist removal composition and method of using the same
CN115291483B (en) * 2022-09-02 2023-08-29 昆山晶科微电子材料有限公司 Semiconductor stripping liquid and preparation method thereof

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11218933A (en) * 1998-01-30 1999-08-10 Fuji Film Olin Kk Solvent for cleaning and removing resist and manufacture of device for forming electronic parts
JP2001194806A (en) * 1999-10-25 2001-07-19 Toray Ind Inc Resist stripping method
JP2001324821A (en) * 2000-05-15 2001-11-22 Fuji Photo Film Co Ltd Method for removing silicon-containing two-layer resist
JP2002520659A (en) * 1998-07-10 2002-07-09 クラリアント・インターナシヨナル・リミテッド Composition for removing photoresist and organic substances from substrate surface
JP2003513342A (en) * 1999-11-02 2003-04-08 東京エレクトロン株式会社 Removal of photoresist and residue from substrate using supercritical carbon dioxide method
JP2003122028A (en) * 2001-10-17 2003-04-25 Mitsubishi Gas Chem Co Inc Liquid composition for removing resist
JP2004502980A (en) * 2000-07-10 2004-01-29 イーケイシー　テクノロジー　インコーポレーテッド Composition for cleaning organic and plasma etching residues of semiconductor devices
JP2004029346A (en) * 2002-06-25 2004-01-29 Mitsubishi Gas Chem Co Inc Resist stripping solution composition
JP2005070795A (en) * 2003-08-27 2005-03-17 Lg Philips Lcd Co Ltd Composition for removing resist for copper and removal method by using the same
WO2005057281A2 (en) * 2003-12-02 2005-06-23 Advanced Technology Materials, Inc. Resist, barc and gap fill material stripping chemical and method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2759462B2 (en) * 1988-11-11 1998-05-28 ナガセ電子化学株式会社 Aqueous release agent composition
JPH11282162A (en) * 1998-03-26 1999-10-15 Jsr Corp Manufacture of hardened film

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11218933A (en) * 1998-01-30 1999-08-10 Fuji Film Olin Kk Solvent for cleaning and removing resist and manufacture of device for forming electronic parts
JP2002520659A (en) * 1998-07-10 2002-07-09 クラリアント・インターナシヨナル・リミテッド Composition for removing photoresist and organic substances from substrate surface
JP2001194806A (en) * 1999-10-25 2001-07-19 Toray Ind Inc Resist stripping method
JP2003513342A (en) * 1999-11-02 2003-04-08 東京エレクトロン株式会社 Removal of photoresist and residue from substrate using supercritical carbon dioxide method
JP2001324821A (en) * 2000-05-15 2001-11-22 Fuji Photo Film Co Ltd Method for removing silicon-containing two-layer resist
JP2004502980A (en) * 2000-07-10 2004-01-29 イーケイシー　テクノロジー　インコーポレーテッド Composition for cleaning organic and plasma etching residues of semiconductor devices
JP2003122028A (en) * 2001-10-17 2003-04-25 Mitsubishi Gas Chem Co Inc Liquid composition for removing resist
JP2004029346A (en) * 2002-06-25 2004-01-29 Mitsubishi Gas Chem Co Inc Resist stripping solution composition
JP2005070795A (en) * 2003-08-27 2005-03-17 Lg Philips Lcd Co Ltd Composition for removing resist for copper and removal method by using the same
WO2005057281A2 (en) * 2003-12-02 2005-06-23 Advanced Technology Materials, Inc. Resist, barc and gap fill material stripping chemical and method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9360761B2 (en) 2009-08-25 2016-06-07 Ltc Co., Ltd. Photoresist stripping composition for manufacturing LCD
JP2020531596A (en) * 2017-07-06 2020-11-05 ダウ グローバル テクノロジーズ エルエルシー Combination of amides for cleaning and stripping electronic components
US11016392B2 (en) 2017-07-06 2021-05-25 Dow Global Technologies Llc Amide combinations for cleaning and stripping of electronic parts
JP7092807B2 (en) 2017-07-06 2022-06-28 ダウ グローバル テクノロジーズ エルエルシー A combination of amides for cleaning and stripping electronic components
WO2021049208A1 (en) * 2019-09-09 2021-03-18 富士フイルム株式会社 Treatment liquid, kit, treatment liquid production method, substrate cleaning method, and substrate treatment method
JPWO2021049208A1 (en) * 2019-09-09 2021-03-18
JP7324290B2 (en) 2019-09-09 2023-08-09 富士フイルム株式会社 Processing liquid, kit, manufacturing method of processing liquid, cleaning method of substrate, processing method of substrate

Also Published As

Publication number Publication date
TW200921302A (en) 2009-05-16
JP2009014938A (en) 2009-01-22
CN101669072A (en) 2010-03-10
KR20100030617A (en) 2010-03-18

Similar Documents

Publication Publication Date Title
WO2009005014A1 (en) Resist stripping composition
TW200736857A (en) Chemical rinse composition for removing resist stripper
MX2009004943A (en) Hepatitis c virus inhibitors.
AU2003272688A1 (en) Compositions substrate for removing etching residue and use thereof
IN2012DN02361A (en)
ES2527817T3 (en) 2 component coating adhesive
SG136954A1 (en) Composition for removing photoresist and/or etching residue from a substrate and use thereof
WO2011022622A3 (en) Improved enhanced oil recovery surfactant composition and method of making the same
EP2520579A3 (en) A silicone compound, photocurable liquid ink using the silicone compound, and method of manufacturing the ink
NZ726475A (en) Antiviral compounds
NO20091845L (en) Macrocyclic peptides such as hepatitis C virus inhibitors
NO20073122L (en) Non-aqueous, non-corrosive microelectronics cleaning formulations
MX2021015589A (en) Use of coating compositions for wind turbine blades.
BR0313876A (en) Use of a mixture, fuel and solvent compositions, and, Process for the preparation of a mixture.
ATE546467T1 (en) ORTHO-NITROSOPHENOLS AS POLYMERIZATION INHIBITORS
CO6501175A2 (en) DERIVATIVES OF BENZOTIAZINES, ITS PREPARATION AND APPLICATION AS DRUGS
WO2011008051A3 (en) Composition for removing resists used with copper or copper alloy
GB2487032A (en) Graffiti removal composition and method
WO2007109518A3 (en) Optoelectronic devices with multilayered structures
PH12018502344A1 (en) A non-aqueous stripping composition and a method of stripping an organic coating from a substrate
AR044966A1 (en) PROCESS FOR THE PRODUCTION OF NEIGHBORHOOD DIESTERS FROM EPOXIDS
WO2011126636A3 (en) Lubricating oil compositions containing epoxide antiwear agents
WO2008063273A3 (en) Fluids having silicone groups and organic groups containing esters
EP1946743A3 (en) Humectant composition
RU2015132830A (en) COMPOSITION INK FOR SOLDER MASK

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880013980.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08777675

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20097026215

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08777675

Country of ref document: EP

Kind code of ref document: A1