WO2008121620A1 - Procédé de formation de jonctions très peu profondes pour des dispositifs à semi-conducteurs - Google Patents

Procédé de formation de jonctions très peu profondes pour des dispositifs à semi-conducteurs Download PDF

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Publication number
WO2008121620A1
WO2008121620A1 PCT/US2008/058150 US2008058150W WO2008121620A1 WO 2008121620 A1 WO2008121620 A1 WO 2008121620A1 US 2008058150 W US2008058150 W US 2008058150W WO 2008121620 A1 WO2008121620 A1 WO 2008121620A1
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Prior art keywords
dopant
gas
implanted
boron
semiconductor substrate
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PCT/US2008/058150
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English (en)
Inventor
Robert Kaim
Jose I. Arno
James A. Dietz
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Advanced Technology Materials, Inc.
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Application filed by Advanced Technology Materials, Inc. filed Critical Advanced Technology Materials, Inc.
Publication of WO2008121620A1 publication Critical patent/WO2008121620A1/fr
Priority to US12/570,995 priority Critical patent/US20100112795A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26566—Bombardment with radiation with high-energy radiation producing ion implantation of a cluster, e.g. using a gas cluster ion beam
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane

Definitions

  • the present invention relates generally to the field of semiconductor devices such as integrated circuits, and more particularly to the formation of ultra- shallow junctions for such semiconductor devices.
  • semiconductor substrates are doped or implanted with boron ions to form ultra-shallow junctions (e.g., source or drain junctions for integrated circuit transistors, etc.).
  • boron ions are first implanted at relatively low implantation energies, after which the ions are electrically activated by thermal annealing to form the junction.
  • boron ions may diffuse into undesirable locations in the semiconductor substrate during subsequent annealing steps, which may be detrimental to the performance of the semiconductor device. Crystalline defects created during implantation of the boron ions may be at least partially responsible for this diffusion phenomenon.
  • One method for reducing the magnitude of undesirable boron diffusion involves the implantation of fluorine ions prior to the thermal annealing step.
  • the implanted fluorine ions may advantageously act to stabilize the silicon lattice damage created during boron ion implantation, which in turn may reduce the boron ion diffusion upon annealing and allow for the formation of shallower junctions in the substrate. It has further been suggested that the diffusion of boron can be even further reduced by separately implanting both carbon and fluorine ions into the semiconductor substrate.
  • each implantation may require a different source feed material, which means that between implants, a relatively time- consuming sequence must be followed in which the source is shut down, the prior feed material is pumped out, the new feed material is introduced, and the source is re-started.
  • An exemplary embodiment of the invention relates to a method for producing a doped region in a semiconductor substrate that includes performing a first implant step in which a carborane cluster molecule is implanted into a semiconductor substrate to form a doped region.
  • Another exemplary embodiment of the invention relates to an apparatus for forming doped regions in a semiconductor substrate that includes a stage for holding a semiconductor substrate and means for implanting a carborane cluster molecule into the semiconductor substrate to form a doped region.
  • Another exemplary embodiment of the invention relates to a method for producing a semiconductor device having a shallow junction region that includes providing a first gas and a second gas in a container.
  • the first gas includes a first dopant and the second gas includes a second dopant.
  • the method also includes implanting the first and second dopants into a semiconductor substrate using an ion. The ion source is not turned off between the steps of implanting the first dopant and implanting the second dopant..
  • FIGURE 1 is a schematic diagram illustrating components of a system for producing semiconductor devices according to an exemplary embodiment.
  • FIGURE 2 is a flow diagram illustrating steps in a method of forming a shallow junction in a semiconductor substrate according to an exemplary embodiment.
  • FIGURE 3 is a cross-sectional view of a portion of a semiconductor substrate according to an exemplary embodiment.
  • FIGURE 4 is a cross-sectional view of the portion of a semiconductor substrate shown in FIGURE 3 illustrating a first dopant implantation step.
  • FIGURE 5 is a cross-sectional view of the portion of a semiconductor substrate shown in FIGURE 4 illustrating a second dopant implantation step.
  • FIGURE 6 is a cross-sectional view of the portion of a semiconductor substrate shown in FIGURE 5 illustrating a third dopant implantation step.
  • FIGURE 7 is a flow diagram illustrating steps in a method of forming a shallow junction in a semiconductor substrate according to another exemplary embodiment.
  • FIGURE 8 is a cross-sectional view of a portion of a semiconductor substrate according to an exemplary embodiment.
  • FIGURE 9 is a cross-sectional view of the portion of a semiconductor substrate shown in FIGURE 8 illustrating a dopant implantation step.
  • FIGURES 10-12 illustrate various components of an ion source configured to deliver intact cluster molecules into a semiconductor substrate.
  • a shallow doped region is formed in a semiconductor substrate (e.g., to produce an shallow junction for a semiconductor device) by co-implanting a plurality of dopant species into the semiconductor substrate.
  • multiple source gases are first mixed in a container that is coupled to an ion implanter, after which each of the dopants are implanted in succession without the need to purge the ion source (according to other exemplary embodiments, the ion source may be purged between one or more of the implanting steps).
  • each of the dopant species are included in a single molecule which is implanted directly into a semiconductor substrate. In this latter embodiment, the implantation parameters are selected such that the various species are implanted at the proper depth and location.
  • the exemplary embodiments described below provide an advantageous method for forming ultra-shallow junctions for semiconductor devices that is more efficient and less labor-intensive than conventional methods.
  • a method for forming such ultra-shallow junctions allows the implantation process to proceed without the need to shut down the implantation equipment and purge the ion source of previous Iy- implanted source gas (according to other exemplary embodiments, the ion source may be purged between one or more of the implanting steps as may be desired).
  • a method is provided in which multiple species are implanted simultaneously into a semiconductor substrate. It would be desirable to provide a method that utilizes any one or more of these or other advantageous features as will be apparent to those reviewing the present disclosure.
  • FIGURE 1 is a schematic diagram illustrating a system 10 for producing semiconductor devices according to an exemplary embodiment.
  • the system 10 includes, among other features, an implanter 20 having an ion source 60, a gas box 50 for dispensing source gases to the ion source 60 and a magnet 40 for directing an ion beam 64 at one or more semiconductor substrates or wafers 200.
  • the substrates 200 are provided on a platform 32 (e.g., a support, stage, susceptor, etc.) or other structure within a chamber 30 during processing.
  • the ion implanter may be any suitable ion implanter now known or hereafter developed for use in semiconductor fabrication facilities. Examples of such implanters are available from Varian Semiconductor Equipment Associates of Gloucester, Massachusetts; from Axcelis Technologies of Beverly, Massachusetts; and Applied Materials Inc. of Santa Clara, California.
  • a container 52 e.g., a vessel, gas tank, cylinder, etc.
  • the container 52 is a conventional high pressure gas cylinder, with an elongate main body portion having a neck of reduced cross-sectional area relative to the main body cross-section of the vessel.
  • the container 52 may include a valve head assembly including a valve (manual or automatic) and associated pressure and flow control elements (e.g., in a manifold arrangement).
  • the container 52 may also include a pressure regulator and/or other features to facilitate the storage and delivery of source gases to the ion source 60.
  • the container 52 is a fluid storage and dispensing apparatus such as a vacuum actuated cylinder (VAC) similar to those described in U.S. Patent No. 6,101,816; U.S. Patent No. 6,343,476; and U.S. Patent No. 6,089,027, the entire disclosures of which are incorporated by reference herein.
  • the fluid storage and delivery apparatus may be a system such as that described in U.S. Patent No.
  • a neat active fluid source comprises a gas storage and dispensing vessel of the type described in U.S. Patent 6,089,027 to Luping Wang, et al. and commercially available from ATMI, Inc. (Danbury, CT) under the trademark VAC, featuring an interiorly disposed regulator element for dispensing of the active gas at a pressure determined by the regulator set point.
  • the device 52 may have any design or configuration suitable for the storage and delivery of the source gases or materials described herein (e.g., it may be a gas storage and dispensing vessel or container holding the neat active gas to be diluted for use).
  • the fluid storage and delivery system may alternatively be constituted and/or arranged, in any suitable manner, e.g., as a supply structure, material or operation.
  • the active fluid source may include a solid physical adsorbent-based package of the type described in U.S. Patent No. 5,518,528.
  • the active fluid may be liberated from a liquid solution, or be generated by an in-situ generator, or be generated from a reactive liquid as described in U.S. Patent Publication No. 2004/0206241 published October, 2004 for "Reactive Liquid Based Gas Storage and Delivery System," or be obtained from a reactive solid, or from a vaporizable or sublimable solid.
  • the active fluid source includes a retention structure, as described in U.S. Patent No. 5,916,245 issued June 29, 1999 for "High Capacity Gas Storage and Dispensing System.”
  • Liquid precursors and/or solid precursors dissolved in suitable solvents enable the direct injection and/or liquid delivery of precursors into a CVD, ALD or RVD vaporizer unit.
  • the accurate and precise delivery rate can be obtained through volumetric metering to achieve reproducibility during CVD, ALD or RVD metallization of a VLSI device.
  • Solid precursor delivery via specially-designed devices, such as ATMFs ProE Vap (ATMI, Danbury, Connecticut, USA) enables highly efficient transport of solid precursors to a CVD or ALD reactor.
  • preferred precursor storage and dispensing packages include those described in U.S. Provisional Patent Application No. 60/662,515 [WO 2006/101767] filed in the names of Paul J. Marganski, et al. for "SYSTEM FOR DELIVERY OF REAGENTS FROM SOLID SOURCES THEREOF" and the storage and dispensing apparatus variously described in U.S. Patent 5,518,528; U.S. Patent 5,704,965; U.S. Patent 5,704,967; U.S. Patent 5,707,424; U.S. Patent 6,101,816; U.S. Patent 6,089,027; U.S.
  • the ion source is fed with a source gas that include the elements to be implanted into a semiconductor substrate.
  • the ion source forms a plasma that includes ions generated from the constituents of the source gas (e.g., B + , F " ) using applied electrical energy.
  • the ions are then accelerated toward a target (e.g., a semiconductor substrate) included in the chamber 30.
  • the depth of penetration into the substrate is determined by a number of factors, including the energy of the ions, the type of ion species, and the composition of the substrate.
  • FIGURE 2 is a flow diagram illustrating steps in a method 100 of forming a shallow junction in a semiconductor substrate according to an exemplary embodiment.
  • FIGURES 3-6 are cross-sectional views of a portion of a semiconductor substrate illustrating various dopant implantation steps.
  • a semiconductor substrate or wafer 200 (illustrated, e.g., in FIGURE 3) is provided into a chamber 30 of an ion implanter (e.g., ion implanter 20 shown in FIGURE 1).
  • the substrate 200 may be provided in the form of a silicon wafer according to an exemplary embodiment.
  • the substrate may comprise other suitable semiconducting materials such as silicon-germainum (Si-Ge) or gallium arsenide (GaAs). Additionally, the substrate may include other layers and/or materials, including buried oxide (BOX) layers and the like.
  • the ion source may also be adapted to allow multiple substrates (e.g., wafers) to be provided within the chamber according to other exemplary embodiments.
  • source gases are introduced into a suitable container (e.g., the container 52 as shown in FIGURE 1).
  • the source gases are provided directly into the container.
  • two or more dopant precursors may be flowed into a mixing chamber and optionally monitored for concentration before being fed into the ion source with a blending/metering system such as those described in U.S. Patent No. 6,909,973; U.S. Patent No. 7,058,519; U.S. Patent No. 7,063,097; and U.S. Patent No. 6,772,781.
  • the source gases may be selected based on the desired implantations to be made. For example, according to a particular exemplary embodiment in which boron, carbon, and fluorine ions are to be implanted into a substrate, BF3 and CH 4 gases may be introduced into the container 52 (with the BF 3 gas providing the boron and fluorine atoms and the CH 4 gas providing the carbon atoms), with the partial pressure of BF 3 to CH 4 between approximately 10:1 and 1 :4. Other suitable ratios may also be used according to other exemplary embodiments depending on the desired implantation characteristics.
  • any suitable combination of gases may be used according to various exemplary embodiments.
  • fluorocarbon e.g., C x F y where 1 ⁇ x ⁇ 6 and 4 ⁇ y ⁇ 14
  • BCI3 boron trichloride
  • boron dopant species include boranes (e.g., B x H 5 , where 2 ⁇ x ⁇ 18 and 6 ⁇ y ⁇ 22) and their derivatives; borohydrofluorides (e.g., B x H y F z where 1 ⁇ x ⁇ 18, l ⁇ y ⁇ 22, and 1 ⁇ z ⁇ 26); borocarbohydrofluorides (e.g., B w C x H y F z where 1 ⁇ w ⁇ 18, 0 ⁇ x ⁇ 12, 0 ⁇ y ⁇ 36, and 0 ⁇ z ⁇ 14) and their derivatives; boron fluorides and their derivatives; B 2 F 4 ; (BF 2 ) 3 BR where R is selected from PH3, CF3, and CO.
  • boranes e.g., B x H 5 , where 2 ⁇ x ⁇ 18 and 6 ⁇ y ⁇ 22
  • Large boron hydride clusters may also be used according to other exemplary embodiments having a formula B x H y where 5 ⁇ x ⁇ 96 and y ⁇ x+8 as described, for example, in U.S. Patent Application No. 11/041,558 (Publication No. 2005/0163693), the disclosure of which is incorporated herein by reference.
  • Other potential source gases that may be used to provide the carbon and/or fluorine dopant species include hydrocarbons (e.g., C x H y where 1 ⁇ x ⁇ 10 and 4 ⁇ y ⁇ 30) and their derivatives, fluorohydrocarbons (e.g., C x H y F z where 1 ⁇ x ⁇ 5, l ⁇ y ⁇ 20, and 1 ⁇ z ⁇ 20) and their derivatives, interhalogen species (e.g., R y F z , where R is chlorine, bromine, or iodine and 1 ⁇ x ⁇ 4 and 1 ⁇ y ⁇ 10), and NF3.
  • hydrocarbons e.g., C x H y where 1 ⁇ x ⁇ 10 and 4 ⁇ y ⁇ 30
  • fluorohydrocarbons e.g., C x H y F z where 1 ⁇ x ⁇ 5, l ⁇ y ⁇ 20, and 1 ⁇
  • source gases other than those described herein may be used to provide other dopant species (e.g., arsenic, phosphorous, indium, and antimony) according to other exemplary embodiments.
  • the particular dopants and source gases may be selected based on any of a variety of factors, including the chemical stability of the gas mixture in the container and its affect on ion source performance and lifetime.
  • any suitable number of source gases may be used according to various exemplary embodiments.
  • more than two different source gases may be provided in the container (e.g., a carbon source gas, a fluorine source gas, and a boron or other dopant source gas may be included in the same container).
  • all dopants may be provided in a single source gas (e.g., (BF 2 ) 3 BCF 3 ).
  • the container 52 is installed into the gas box 50 of the ion implanter 30.
  • the container 52 may include features (e.g., threaded connectors, etc.) that are configured to couple the container 52 to the delivery line 62 and to provide a fluid tight connection between the container 52 and the delivery line 62.
  • each of the dopants are implanted in the substrate separately in succession. Because all source gases are already included in the same container 52, there is no need to shut down the ion source, purge the container, and restart the ion source between implant steps. Instead, ions from the source plasma are accelerated and enter a magnetic spectrometer which is tuned to a particular magnetic field which selects ions according to their mass and charge; only those ions for which the spectrometer is selective (e.g., C + ions) will be directed to the substrate. Once the first implant is complete, the spectrometer will be retuned to a different field strength such that it is selective to a second type of ions included in the plasma, and so on.
  • the first set of implantation parameters are selected for the first species to be implanted into the substrate.
  • the magnets and other components of the ion implanter may also be re-tuned as may be appropriate to select for the desired mass and energy of the dopant being implanted (e.g., the accelerating voltage and magnetic field of the implanter may be adjusted).
  • the particular implantation parameters selected may vary according to a number of factors, including the desired concentration and implant depth in the substrate, the species being implanted, the source gas being used, and other factors.
  • the implantation energy may be selected to have a value between approximately 1 and 50 keV to obtain a concentration in the substrate of between approximately 10 14 and 10 15 ions/cm 2 at a depth of between approximately 10 and 500 nanometers.
  • the first dopant is implanted through a top surface 202 of the substrate 200 (as indicated by arrows 210) to a desired implantation depth and concentration.
  • a region or area 220 is formed in the substrate 200 that includes the desired dopant (e.g., carbon dopants) within the semiconductor microstructure.
  • the first dopant is implanted to a depth greater than the depth of the ultra-shallow junction to be produced.
  • the first dopant may be implanted to a depth less than or equal to the depth of the ultra- shallow junction to be produced.
  • the implantation parameters are selected for the second species to be implanted into the substrate.
  • the magnets and other components of the ion implanter may also be re-tuned as may be appropriate to select for the desired mass and energy of the dopant being implanted (e.g., the accelerating voltage and magnetic field of the implanter may be adjusted).
  • the ion source and the delivery line 62 are not purged between implantation steps.
  • the particular implantation parameters selected may vary according to a number of factors.
  • the implantation energy may be selected to have a value between approximately 1 and 50 keV to obtain a concentration in the substrate of between approximately 10 14 and 10 15 ions/cm 2 at a depth of between approximately 10 and 500 nanometers.
  • the second dopant is implanted through a top surface 202 of the substrate 200 (as indicated by arrows 212) to a desired implantation depth and concentration.
  • a region or area 222 is formed in the substrate 200 that includes the desired dopant (e.g., fluorine dopants) within the semiconductor microstructure.
  • the second dopant is implanted to a depth equal to the depth of the first dopant, although according to other exemplary embodiments, the depth of the second implant may be greater or less than that of the first implant.
  • the implantation parameters are selected for boron ions to be implanted into the substrate.
  • the magnets and other components of the ion implanter may also be re-tuned as may be appropriate to select for the mass and energy of the dopant being implanted (e.g., the accelerating voltage and magnetic field of the implanter may be adjusted).
  • the ion source 60 and the delivery line 62 are not purged between implantation steps.
  • the particular implantation parameters selected may vary according to a number of factors.
  • the implantation energy may be selected to have a value between approximately 0.1 and 20 keV to obtain a concentration in the substrate of between approximately 10 14 and 10 16 ions/cm 2 at a depth of between approximately 5 and 200 nanometers.
  • boron ions are implanted through a top surface 202 of the substrate 200 (as indicated by arrows 214) to a desired implantation depth and concentration to form a doped region 224 and a junction 240.
  • the boron ions are implanted to a depth less than the depth of the first and second dopants, although according to other exemplary embodiments, the depth of the boron implant may be greater or less than that of the first and/or second implants.
  • the first and second implanted species e.g., carbon and fluorine
  • the first and second implanted species are intended to restrain boron diffusion during a subsequent annealing step 155.
  • the composition of the regions 222 and 224 may vary with depth (e.g., there may be a greater concentration of boron atoms at the top of region 224 than at the bottom thereof) and that there may be atoms of two or more types in a given region (e.g., region 224 may include carbon, fluorine, and boron ions implanted therein).
  • One advantageous feature of providing a mixture of source gases is that the ion source can run continuously throughout the co-implantation process. This saves the time required for shutting down, changing feed material and re-starting the source. In order to change species and energy, only the beamline magnets and high voltage power supplies need to be re-tuned, which is a much faster process than a complete ion source dopant change. For batch implant tools, in which multiple wafers are loaded onto a large rotating disc, it may be advantageous to leave the wafers on the disc while the beamline magnets and power supplies are re-tuned, and then to immediately begin the next co-implantation. In this manner, the time required for unloading and re-loading the wafers may be eliminated.
  • deposits may be removed from the ion source before they are transferred in an ion beam to a substrate by using gaseous halide compounds such as XeF 2 , XeF 4 , XeF 6 , NF 3 , IF 5 , IF 7 , SF 6 , C 2 F 6 , F 2 , CF 4 , KrF 2 , Cl 2 , HCl, ClF 3 , ClO 2 , N 2 F 4 , N 2 F 2 , N 3 F, NFH 2 , NH 2 F, compounds of the formula C x F 5 , such as C 3 F 6 , C 3 F 8 , C 4 F 8 , and C 5 F 8 , compounds of the formula C x H y F z , such as CHF 3 , CH 2 F 2 , CH 3 F, C 2 HF 5 , C 2 H 2 F 4 , C 2 H 3 F 3 , C 2 H 4 F 2 , and C 2 H 5 F, compounds
  • the conditions enabling reaction of the gaseous halide and the deposits may include any suitable conditions of temperature, pressure, flow rate, composition, etc. under which the gaseous halide chemically interacts with the material sought to be removed.
  • suitable conditions include ambient temperature, temperature in excess of ambient temperature, presence of plasma, absence of plasma, sub- atmospheric pressure, etc.
  • Specific temperatures for such gaseous halide contacting can be in a range of from about O 0 C to about 1000 0 C.
  • the contacting can involve delivery of the gaseous halide in a carrier gas, or in a neat form, or in admixture with a further cleaning agent, dopant, etc.
  • the gaseous halide agent for chemical reaction with deposits that are at ambient temperature may be heated to increase the kinetics of the reaction.
  • the cleaning composition may be supplied from a source that is particularly adapted for delivery OfXeF 2 or other cleaning reagent, such as the solid source delivery system more fully described in international patent application PCT/US 06/08530 for "SYSTEM FOR DELIVERY OF REAGENTS FROM SOLID SOURCES," based on U.S. Provisional Patent Application No. 60/662,515 and U.S. Provisional Patent Application No. 60/662,396, the disclosures of which hereby are incorporated herein by reference in their respective entireties.
  • the cleaning composition may be provided in the mixture of gases included in the delivery system.
  • FIGURES 2-6 illustrate a method in which multiple dopants are implanted into a semiconductor substrate sequentially
  • each of the dopant species are implanted into the substrate simultaneously.
  • a source feed material utilizes a molecule that includes at least two, and preferably all, of the required species to be co-implanted into the semiconductor substrate.
  • FIGURE 7 is a flow diagram illustrating steps in a method 300 of forming a shallow junction in a semiconductor substrate according to an exemplary embodiment.
  • FIGURES 8-9 are cross-sectional views of a portion of a semiconductor substrate 400 illustrating various dopant implantation steps.
  • a semiconductor substrate or wafer 400 (illustrated, e.g., in FIGURE 8) is provided into a chamber of an ion implanter.
  • the substrate 400 may be provided in the form of a silicon wafer according to an exemplary embodiment.
  • the substrate may comprise other suitable semiconducting materials such as silicon-germainum (Si-Ge) or gallium arsenide (GaAs).
  • the substrate may include other layers and/or materials, including buried oxide (BOX) layers and the like.
  • FIGURES 10-12 An exemplary embodiment of an ion source for delivering intact cluster molecules is illustrated in FIGURES 10-12.
  • the ion source is a Clusterlon ® ion source commercially available from SemEquip Inc. of Billerica, Massachusetts.
  • other types of ion sources or delivery devices may be utilized to deliver intact cluster molecules to the substrate.
  • the cluster molecules may be implanted into a substrate using plasma doping techniques and systems such as, but not necessarily limited to, those described in U.S. Patent Application Publication No. 2005/0287307.
  • the ion source for delivering intact cluster molecules to a substrate uses an alternative ionization process which produces intense ion beams of large molecules without dissociation.
  • the various constituents of the cluster molecule are held together by electrons. Immediately upon entering the substrate (e.g., within the first several atomic layers), the binding electrons are stripped away due to the interaction with the atoms in the substrate and the constituents travel into the substrate as separate atoms (e.g., in the case of a O- carborane molecule having the general formula 1,2-C 2 B 1 OH 12 , the molecule impacts the surface of the substrate and immediately separates into 24 separate atoms, each with its own energy).
  • the implantation process utilizes much higher energy than conventional implantation processes (e.g., the total amount of energy is calculated by totaling the energy required to implant each of the individual components of the molecule into the substrate), and increases the dose rate proportionally to the number of dopant species that are included in the cluster molecule to be implanted. Additionally, beam deceleration is not required, which reduces or eliminates energy contamination and beam divergence issues associated with conventional implantation processes.
  • the cluster molecules are provided in a suitable container (e.g., the container 52 as shown in FIGURE 1).
  • the cluster molecule includes all of the dopant species to be implanted (e.g., the cluster molecule is a boro-fluoro-carbon molecule).
  • the cluster molecule includes a subset of the dopant species to be implanted (e.g., where carbon, fluorine, and boron are to be implanted, the cluster molecule may be a carborane cluster molecule, with the fluorine being implanted separately either before or after the cluster molecule implantation step).
  • all of the dopant species included in the cluster molecule are implanted simultaneously into the substrate.
  • the implantation parameters are selected for the cluster molecules.
  • the implant energy of each of the atoms in the molecule is proportional to its mass and the square of its velocity.
  • the entire molecule, and each of its constituent elements are traveling at the same velocity.
  • the proportion of the total energy of the molecule associated with each of the individual atoms in the molecule will be proportional to the mass ratio of the atoms in the molecule. If one knows the desired implant energy for each of the constituent atoms, molecules may be selected with the appropriate mass ratios of atoms.
  • a molecule such as BF 3 may be utilized at a total implant energy of 6.8 keV.
  • cluster molecules are implanted through a top surface 402 of the substrate 400 (as indicated by arrows 410) such that the constituents of the molecule are implanted to a desired implantation depth and concentration.
  • three separate regions 422, 424, and 426 are formed in the substrate, each having a different composition.
  • region 422 may represent a region in which fluorine ions have been implanted
  • region 424 may represent a region in which carbon ions have been implanted
  • region 426 may represent a region in which boron ions have been implanted (i.e., the ultra-shallow junction region).
  • each of the regions 422, 424, and 426 are formed simultaneously.
  • one of the regions is formed before the other two (e.g., region 422 is doped with fluorine ions, after which regions 424 and 426 are formed simultaneously by implanting a cluster molecule including both carbon and boron atoms).
  • certain of the implanted dopant species e.g., fluorine and carbon
  • composition of the regions 422, 424, and 426 may vary with depth (e.g., there may be a greater concentration of boron atoms at the top of region 426 than at the bottom thereof) and that there may be atoms of two or more types in a given region (e.g., region 426 may include carbon, fluorine, and boron ions implanted therein).
  • only one type of cluster molecule is implanted into a substrate.
  • more than one type of cluster molecule may be implanted into the same substrate to provide a desired dopant profile in the substrate.
  • other dopant species may also be implanted in separate steps to add different dopant species to the substrate and/or to supplement the dopants provided by the cluster molecules (e.g., CH 3 gas may be used as a source to provide carbon doping for the substrate and/or to supplement the carbon doping provided by the cluster molecules).
  • Cluster molecules may be in gaseous form (e.g., BF 2 CH 3 ; 1,5-C 2 B 3 H 5 and derivatives thereof that include functional groups having between 1 and 4 carbon atoms (e.g., -CH 3 ) in place of one or more of the hydrogen atoms); liquid form (e.g., o-carborane (1,2-C 2 B 1O H 12 ) derivatives that are liquid at room temperature, such as those including one or more of the following functional groups: 1-C 2 H 5 , 1-CH(CH3) 2 , and -B-11C3H7); or in solid form (e.g., carborane molecules such as o-carborane 1,2- C 2 B 1O H 12 ) according to various exemplary embodiments.
  • gaseous form e.g., BF 2 CH 3 ; 1,5-C 2 B 3 H 5 and derivatives thereof that include functional groups having between 1 and 4 carbon atoms (e.g., -CH 3 ) in place of one or more of the hydrogen
  • the cluster molecules may be 1,7-C 2 BeHg (either alone or with a 1 ,7-(CHs) 2 functional group); 1 ,7-C 2 B 7 Hp (either alone or with a 1 ,7-(CHs) 2 functional group); or 1,6-C 2 BgH 1O (either alone or with a 1,6-(CHs) 2 functional group).
  • the cluster molecules may be provided as boronic acids or as simple organo boron molecules such as trimethyl borates (TMB) (one example of which has the general formula B-(O-CHs ) 3 ).
  • TMB trimethyl borates
  • Such molecules typically include one boron atom per molecule, and include C-B and C-O-B bonded species.
  • Some molecules are readily available and relatively inexpensive, although in certain applications, such molecules may not provide adequate boron content to achieve the desired characteristics for an ultra-shallow junction. Examples of such molecules include BF 2 CHs, CBO 2 H 5 , and C 2 BO 2 H 8 .
  • boron hydride clusters may be used such as those having a formula B x H y where 5 ⁇ x ⁇ 96 and y ⁇ x+8 as described, for example, in U.S. Patent Application No. 11/041,558 (Publication No. 2005/0163693), the disclosure of which is incorporated herein by reference (e.g., B 18 H 22 ).
  • the implantation energy of the cluster molecule may be selected to have a value between approximately 1 and 100 keV.
  • This cluster implant would result in an equivalent carbon implant energy of between approximately 0.115 keV and 11.5 keV, and an equivalent boron implant energy of between approximately 0.106 keV and 10.6 keV, wherein the implanted dose of carbon atoms would be 3 times greater than the implanted dose of boron atoms.
  • the cluster molecules may be provided in the form of carboranes having the general formula C x B y H z .
  • Such molecules are relatively stable and readily available, and include relatively low carbon content in each molecule.
  • Examples of such molecules include o-carboranes and its derivatives, which are commercially available from Sigma- Aldrich of St. Louis, Missouri and from Strem Chemicals, Inc. of Newburyport, Massachusetts.
  • Other examples include p and m- carboranes and their derivatives, which are commercially available from Katchem S.R.O. of the Czech Republic.
  • the implantation energy may be selected to have a value between approximately 1 and 100 keV to obtain an effective carbon energy in the substrate of between approximately 0.082 and 8.2 keV and an effective boron energy in the substrate of between approximately 0.075 and 7.5 keV, wherein the implanted dose of boron atoms would be 5 times greater than the implanted dose of carbon atoms.
  • the hydrogen included in the molecule diffuses out upon implantation into the substrate.
  • the cluster molecules may be provided in the form of carborane derivatives, which are generally characterized as having lower melting points than conventional carboranes.
  • carborane derivatives include a main carborane structure similar to that described above (e.g., o-carborane 1,2-C 2 B 1 OH 12 ) and also one or more substituted groups attached in place of hydrogen atoms (e.g., the derivative may be a fluorinated derivative in which CF 3 may be substituted for one or more of the hydrogen atoms so that carbon, boron, and fluorine atoms are each present in the cluster molecule).
  • Other potential substituted groups include fluorides (-F x ) and C 6 H 4 F (e.g., C 2 B 1O H 12 F 1O or fluorinated derivatives of m- or p-carboranes).
  • C 6 H 4 F e.g., C 2 B 1O H 12 F 1O or fluorinated derivatives of m- or p-carboranes.
  • a carborane derivative having the general formula o-carborane, 1 - Hi-CeH 4 F with a melting point of approximately 68 degrees Celsius may be used.
  • a relatively large number of combinations are possible according to various exemplary embodiments, all of which are intended to be within the scope of the present disclosure.
  • cluster molecules may be provided in the form of small carboranes (e.g., 1,5-C 2 B 3 H 5 ; 1,2-C 2 B 4 H 6 ; 1,2-C 2 B 5 H 7 ; and 1,2-C 2 B 8 H 10 ).
  • the implantation energy may be selected to have a value between approximately 1 and 100 keV to obtain an effective carbon energy in the substrate of between approximately 0.19 and 19 keV and an effective boron energy in the substrate of between approximately 0.18 and 18 keV, wherein the implanted dose of boron atoms would be 1.5 times greater than the implanted dose of carbon atoms.
  • the effective implant energy of each species is reduced by the ratio of the species atomic weight to the cluster's molecular weight. This means that very low effective implant energies, which are important in forming shallow junctions, may be achieved at higher extraction energy for the molecule. The higher extraction energy is beneficial for obtaining higher extracted beam current, thereby further improving productivity.
  • the methods described according to the various exemplary embodiments provide various advantages over conventional implantation methods.
  • the methods described herein provide more efficient and less labor-intensive implantation of multiple implantation species, since the ion source need not be shut down, evacuated, and re-started between implantation steps.
  • the implantation of the various dopant species described herein may provide effective ways to reduce or eliminate undesirable boron diffusion in a substrate into which it is implanted (and the methods and species described herein may also find utility in reducing or eliminating undesirable of other implanted dopant species such as phosphorous).

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Abstract

L'invention concerne un premier procédé pour produire une zone dopée dans un substrat semi-conducteur, comprenant la réalisation d'une première étape d'implantation dans laquelle un amas de molécules de carborane est implanté dans un substrat semi-conducteur pour former une zone dopée. Un second procédé pour produire un dispositif à semi-conducteurs ayant une zone de jonction peu profonde comprend la fourniture d'un premier gaz et d'un second gaz dans un contenant. Le premier gaz comprend un premier dopant, et le second gaz comprend un second dopant. Le second procédé comprend également l'implantation des premier et second dopants dans un substrat semi-conducteur en utilisant un ion. La source d'ions n'est pas coupée entre les étapes d'implantation du premier dopant et d'implantation du second dopant.
PCT/US2008/058150 2005-08-30 2008-03-25 Procédé de formation de jonctions très peu profondes pour des dispositifs à semi-conducteurs WO2008121620A1 (fr)

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US6550308A Continuation-In-Part 2005-08-30 2008-06-14

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011059504A3 (fr) * 2009-11-11 2011-10-27 Axcelis Technologies Inc. Procédé et appareil permettant d'éliminer les résidus présents sur un composant de type source d'ions
EP3062330A3 (fr) * 2009-10-27 2016-11-16 Entegris, Inc. Procédé et système d'implantation d'ions
US9960042B2 (en) 2012-02-14 2018-05-01 Entegris Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
US10497569B2 (en) 2009-07-23 2019-12-03 Entegris, Inc. Carbon materials for carbon implantation

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101131965B1 (ko) * 2010-07-15 2012-04-04 주식회사 하이닉스반도체 반도체 장치 제조방법
CN105849869B (zh) * 2013-11-26 2017-08-11 瓦里安半导体设备公司 处理工件的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002343882A (ja) * 2001-04-30 2002-11-29 Hynix Semiconductor Inc 半導体素子の接合形成方法
WO2007027798A2 (fr) * 2005-08-30 2007-03-08 Advanced Technology Materials, Inc. Implantation d'ions de bore utilisant des precurseurs alternatifs de bore fluores, et formation de gros hydrures de bore a des fins d'implantation
US20070178679A1 (en) * 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same
WO2007146942A2 (fr) * 2006-06-12 2007-12-21 Semequip, Inc. Système d'acheminement de vapeur utile avec des sources d'ions et des vaporisateurs pour une utilisation dans un tel système

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002343882A (ja) * 2001-04-30 2002-11-29 Hynix Semiconductor Inc 半導体素子の接合形成方法
WO2007027798A2 (fr) * 2005-08-30 2007-03-08 Advanced Technology Materials, Inc. Implantation d'ions de bore utilisant des precurseurs alternatifs de bore fluores, et formation de gros hydrures de bore a des fins d'implantation
US20070178679A1 (en) * 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same
WO2007146942A2 (fr) * 2006-06-12 2007-12-21 Semequip, Inc. Système d'acheminement de vapeur utile avec des sources d'ions et des vaporisateurs pour une utilisation dans un tel système

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JACOBSON D. ET AL.: "Ultra-high resolution mass spectroscopy of boron cluster ions", NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH B, vol. 237, 2005, pages 406 - 410, XP027665110 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10497569B2 (en) 2009-07-23 2019-12-03 Entegris, Inc. Carbon materials for carbon implantation
EP3062330A3 (fr) * 2009-10-27 2016-11-16 Entegris, Inc. Procédé et système d'implantation d'ions
WO2011059504A3 (fr) * 2009-11-11 2011-10-27 Axcelis Technologies Inc. Procédé et appareil permettant d'éliminer les résidus présents sur un composant de type source d'ions
TWI500064B (zh) * 2009-11-11 2015-09-11 Axcelis Tech Inc 用於移除來自離子源構件之殘餘物之方法、協助移除來自束構件之殘餘物之系統及離子植入系統
US9960042B2 (en) 2012-02-14 2018-05-01 Entegris Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement
US10354877B2 (en) 2012-02-14 2019-07-16 Entegris, Inc. Carbon dopant gas and co-flow for implant beam and source life performance improvement

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