WO2008120498A1 - 光電変換装置及びその製造方法 - Google Patents

光電変換装置及びその製造方法 Download PDF

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Publication number
WO2008120498A1
WO2008120498A1 PCT/JP2008/052125 JP2008052125W WO2008120498A1 WO 2008120498 A1 WO2008120498 A1 WO 2008120498A1 JP 2008052125 W JP2008052125 W JP 2008052125W WO 2008120498 A1 WO2008120498 A1 WO 2008120498A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
conversion device
manufacturing
same
intermediate layer
Prior art date
Application number
PCT/JP2008/052125
Other languages
English (en)
French (fr)
Inventor
Yasuyuki Kobayashi
Satoshi Sakai
Kengo Yamaguchi
Yuji Asahara
Saneyuki Goya
Original Assignee
Mitsubishi Heavy Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries, Ltd. filed Critical Mitsubishi Heavy Industries, Ltd.
Priority to AU2008233856A priority Critical patent/AU2008233856B2/en
Priority to KR1020097018001A priority patent/KR101119459B1/ko
Priority to EP08711004A priority patent/EP2131401A1/en
Priority to US12/526,883 priority patent/US20100116331A1/en
Priority to CN200880006731XA priority patent/CN101622719B/zh
Priority to JP2008507634A priority patent/JPWO2008120498A1/ja
Publication of WO2008120498A1 publication Critical patent/WO2008120498A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

　低コストでより高い性能を得ることができる光電変換装置及びその製造方法を提供する。積層された少なくとも２層の光電変換層と、前記２層の光電変換層の間に介在し、該２層の光電変換層を電気的及び光学的に接続する中間層９３とを備えた光電変換装置９０が、前記中間層９３の表面にプラズマ耐性保護層９３Ａを有する。
PCT/JP2008/052125 2007-03-29 2008-02-08 光電変換装置及びその製造方法 WO2008120498A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
AU2008233856A AU2008233856B2 (en) 2007-03-29 2008-02-08 Photovoltaic device and process for producing same.
KR1020097018001A KR101119459B1 (ko) 2007-03-29 2008-02-08 광전 변환 장치 및 그 제조 방법
EP08711004A EP2131401A1 (en) 2007-03-29 2008-02-08 Photoelectric conversion device and method for manufacturing the same
US12/526,883 US20100116331A1 (en) 2007-03-29 2008-02-08 Photovoltaic device and process for producing same
CN200880006731XA CN101622719B (zh) 2007-03-29 2008-02-08 光电变换装置及其制造方法
JP2008507634A JPWO2008120498A1 (ja) 2007-03-29 2008-02-08 光電変換装置及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007088753 2007-03-29
JP2007-088753 2007-03-29

Publications (1)

Publication Number Publication Date
WO2008120498A1 true WO2008120498A1 (ja) 2008-10-09

Family

ID=39808083

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052125 WO2008120498A1 (ja) 2007-03-29 2008-02-08 光電変換装置及びその製造方法

Country Status (7)

Country Link
US (1) US20100116331A1 (ja)
EP (1) EP2131401A1 (ja)
JP (1) JPWO2008120498A1 (ja)
KR (1) KR101119459B1 (ja)
CN (1) CN101622719B (ja)
AU (1) AU2008233856B2 (ja)
WO (1) WO2008120498A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011033885A1 (ja) * 2009-09-17 2011-03-24 三菱重工業株式会社 光電変換装置
JP2011071278A (ja) * 2009-09-25 2011-04-07 Mitsubishi Electric Corp 光電変換装置とその製造方法
CN102177588A (zh) * 2008-10-16 2011-09-07 高通Mems科技公司 用于光伏模块的高效干涉式滤色器
EP2485264A1 (en) * 2009-09-29 2012-08-08 Mitsubishi Heavy Industries, Ltd. Photoelectric conversion device
KR101240900B1 (ko) 2009-07-29 2013-03-08 삼성코닝정밀소재 주식회사 태양전지 기판

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010101030A1 (ja) * 2009-03-02 2010-09-10 株式会社カネカ 薄膜太陽電池モジュール
KR101032270B1 (ko) * 2010-03-17 2011-05-06 한국철강 주식회사 플렉서블 또는 인플렉서블 기판을 포함하는 광기전력 장치 및 광기전력 장치의 제조 방법
US9577045B2 (en) 2014-08-04 2017-02-21 Fairchild Semiconductor Corporation Silicon carbide power bipolar devices with deep acceptor doping
WO2016195718A1 (en) * 2015-06-05 2016-12-08 Lumeta, Llc Apparatus and method for solar panel on-board wiring
US10446704B2 (en) 2015-12-30 2019-10-15 International Business Machines Corporation Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07254568A (ja) * 1994-01-28 1995-10-03 Toray Ind Inc アモルファスシリコン−ゲルマニウム膜およびその製造方法
JPH0878714A (ja) * 1994-09-07 1996-03-22 Sanyo Electric Co Ltd 光起電力装置及び光起電力装置の製造方法
JP2001308354A (ja) 2000-04-24 2001-11-02 Sharp Corp 積層型太陽電池
JP2002118273A (ja) 2000-10-05 2002-04-19 Kanegafuchi Chem Ind Co Ltd 集積型ハイブリッド薄膜光電変換装置
JP2003188401A (ja) * 2001-10-09 2003-07-04 Mitsubishi Heavy Ind Ltd タンデム型シリコン系薄膜光電変換装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347572A (ja) * 2002-01-28 2003-12-05 Kanegafuchi Chem Ind Co Ltd タンデム型薄膜光電変換装置とその製造方法
JP4338495B2 (ja) * 2002-10-30 2009-10-07 富士通マイクロエレクトロニクス株式会社 シリコンオキシカーバイド、半導体装置、および半導体装置の製造方法
CN1218406C (zh) * 2003-09-25 2005-09-07 李毅 一种太阳能电池及制造方法
JP2007273858A (ja) * 2006-03-31 2007-10-18 Kaneka Corp 集積型光電変換装置及び集積型光電変換装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07254568A (ja) * 1994-01-28 1995-10-03 Toray Ind Inc アモルファスシリコン−ゲルマニウム膜およびその製造方法
JPH0878714A (ja) * 1994-09-07 1996-03-22 Sanyo Electric Co Ltd 光起電力装置及び光起電力装置の製造方法
JP2001308354A (ja) 2000-04-24 2001-11-02 Sharp Corp 積層型太陽電池
JP2002118273A (ja) 2000-10-05 2002-04-19 Kanegafuchi Chem Ind Co Ltd 集積型ハイブリッド薄膜光電変換装置
JP2003188401A (ja) * 2001-10-09 2003-07-04 Mitsubishi Heavy Ind Ltd タンデム型シリコン系薄膜光電変換装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"Report from Neuchatel University", THE 2ND WORLD CONFERENCE AND EXHIBITION ON PHOTOVOLTAIC SOLAR ENERGY CONVERSION, 1998, pages 728 - 731
TADATSUGU MINAMI: "Ceramics Japan", ADVANTAGES AND PROBLEMS OF ZNO-BASED SUBSTITUTE MATERIALS, vol. 42, no. 1, 2007

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102177588A (zh) * 2008-10-16 2011-09-07 高通Mems科技公司 用于光伏模块的高效干涉式滤色器
JP2012506148A (ja) * 2008-10-16 2012-03-08 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド 光起電力モジュール用高効率干渉カラーフィルタ
JP2013131785A (ja) * 2008-10-16 2013-07-04 Qualcomm Mems Technologies Inc 光起電力モジュール用高効率干渉カラーフィルタ
KR101240900B1 (ko) 2009-07-29 2013-03-08 삼성코닝정밀소재 주식회사 태양전지 기판
WO2011033885A1 (ja) * 2009-09-17 2011-03-24 三菱重工業株式会社 光電変換装置
JP2011071278A (ja) * 2009-09-25 2011-04-07 Mitsubishi Electric Corp 光電変換装置とその製造方法
EP2485264A1 (en) * 2009-09-29 2012-08-08 Mitsubishi Heavy Industries, Ltd. Photoelectric conversion device
EP2485264A4 (en) * 2009-09-29 2013-03-27 Mitsubishi Heavy Ind Ltd PHOTOELECTRIC CONVERSION DEVICE

Also Published As

Publication number Publication date
KR101119459B1 (ko) 2012-03-22
CN101622719A (zh) 2010-01-06
AU2008233856A1 (en) 2008-10-09
US20100116331A1 (en) 2010-05-13
AU2008233856B2 (en) 2012-11-01
JPWO2008120498A1 (ja) 2010-07-15
EP2131401A1 (en) 2009-12-09
CN101622719B (zh) 2012-07-04
KR20090115177A (ko) 2009-11-04

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