WO2008117354A1 - 磁気抵抗効果素子、及びこれを備えた磁気ヘッド、磁気記録装置、磁気メモリ装置 - Google Patents

磁気抵抗効果素子、及びこれを備えた磁気ヘッド、磁気記録装置、磁気メモリ装置 Download PDF

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Publication number
WO2008117354A1
WO2008117354A1 PCT/JP2007/055875 JP2007055875W WO2008117354A1 WO 2008117354 A1 WO2008117354 A1 WO 2008117354A1 JP 2007055875 W JP2007055875 W JP 2007055875W WO 2008117354 A1 WO2008117354 A1 WO 2008117354A1
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WO
WIPO (PCT)
Prior art keywords
effect device
magnetoresistance effect
magnetic
layer
rare earth
Prior art date
Application number
PCT/JP2007/055875
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English (en)
French (fr)
Inventor
Arata Jogo
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Fujitsu Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to PCT/JP2007/055875 priority Critical patent/WO2008117354A1/ja
Publication of WO2008117354A1 publication Critical patent/WO2008117354A1/ja

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/126—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing rare earth metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Thin Magnetic Films (AREA)
  • Hall/Mr Elements (AREA)

Abstract

【課題】　ＣＰＰ型の磁気抵抗効果素子において、積層フェリピン層の材料を改善しＭＲ比の高い磁気抵抗効果素子を得ると共に、この磁気抵抗効果素子の製造方法、この素子を利用した磁気ヘッド、磁気ディスク装置、磁気メモリ装置を提供する。 【解決手段】　基板の上方に反強磁性層と、第１固定磁化層と、非磁性結合層と、第２固定磁化層と、非磁性中間層と、フリー強磁性層とが順に形成され、前記第１固定磁化層および第２固定磁化層のうちの何れか一方が、希土類元素を含む合金、または希土類元素の単体からなる材料から形成された膜を有することを特徴とする磁気抵抗効果素子による。 　前記希土類元素を含む合金、または希土類元素の単体からなる材料が、（ＣｏaＦｅ(1-a)）(1-b)Ｘb（ＸはＳｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙの少なくとも一種、ａ及びｂは原子組成比率を表し、０≦ａ≦１、０．０５≦ｂ≦１）で表される材料であると好適である。
PCT/JP2007/055875 2007-03-22 2007-03-22 磁気抵抗効果素子、及びこれを備えた磁気ヘッド、磁気記録装置、磁気メモリ装置 WO2008117354A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055875 WO2008117354A1 (ja) 2007-03-22 2007-03-22 磁気抵抗効果素子、及びこれを備えた磁気ヘッド、磁気記録装置、磁気メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055875 WO2008117354A1 (ja) 2007-03-22 2007-03-22 磁気抵抗効果素子、及びこれを備えた磁気ヘッド、磁気記録装置、磁気メモリ装置

Publications (1)

Publication Number Publication Date
WO2008117354A1 true WO2008117354A1 (ja) 2008-10-02

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2532575A (en) * 2014-09-23 2016-05-25 HGST Netherlands BV Negative-polarization spin-torque-oscillator
JP7128476B2 (ja) 2017-01-24 2022-08-31 国立大学法人東北大学 磁気抵抗素子の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223086A (ja) * 2004-02-04 2005-08-18 Sony Corp 磁気記憶素子及びその駆動方法、磁気メモリ
JP2005294453A (ja) * 2004-03-31 2005-10-20 Alps Electric Co Ltd 磁気検出素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005223086A (ja) * 2004-02-04 2005-08-18 Sony Corp 磁気記憶素子及びその駆動方法、磁気メモリ
JP2005294453A (ja) * 2004-03-31 2005-10-20 Alps Electric Co Ltd 磁気検出素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2532575A (en) * 2014-09-23 2016-05-25 HGST Netherlands BV Negative-polarization spin-torque-oscillator
JP7128476B2 (ja) 2017-01-24 2022-08-31 国立大学法人東北大学 磁気抵抗素子の製造方法

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