WO2008114862A1 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- WO2008114862A1 WO2008114862A1 PCT/JP2008/055245 JP2008055245W WO2008114862A1 WO 2008114862 A1 WO2008114862 A1 WO 2008114862A1 JP 2008055245 W JP2008055245 W JP 2008055245W WO 2008114862 A1 WO2008114862 A1 WO 2008114862A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- temperature
- processing
- heat medium
- status
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
【課題】シャワープレートの温度を所望の温度に維持すると共に面内温度の均一性を向上させて、シャワープレートの変形、歪みの発生を抑える。 【解決手段】処理容器2内に基板Wを収納し、処理ガスをプラズマ化して基板Wを処理するプラズマ処理装置1であって、処理容器2内に処理ガス供給用のガス供給部材50が配置され、ガス供給部材50に、超臨界状態または亜超臨界状態の熱媒を流通させる熱媒流路55が形成されている。気体と液体の両方の性質をもった超臨界状態または亜超臨界状態の熱媒を利用してガス供給部材50の温度を所望の温度に維持すると共に面内温度の均一性を向上させて、処理の際の変形、歪みの発生を抑える。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-074996 | 2007-03-22 | ||
JP2007074996 | 2007-03-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008114862A1 true WO2008114862A1 (ja) | 2008-09-25 |
Family
ID=39765962
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/055245 WO2008114862A1 (ja) | 2007-03-22 | 2008-03-21 | プラズマ処理装置 |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW200914646A (ja) |
WO (1) | WO2008114862A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002286385A (ja) * | 2001-03-26 | 2002-10-03 | Sanyo Electric Co Ltd | 熱搬送装置 |
WO2002080249A1 (fr) * | 2001-03-28 | 2002-10-10 | Tokyo Electron Limited | Dispositif de traitement au plasma |
WO2005045913A1 (ja) * | 2003-11-05 | 2005-05-19 | Tokyo Electron Limited | プラズマ処理装置 |
-
2008
- 2008-03-21 WO PCT/JP2008/055245 patent/WO2008114862A1/ja active Application Filing
- 2008-03-21 TW TW97110234A patent/TW200914646A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002286385A (ja) * | 2001-03-26 | 2002-10-03 | Sanyo Electric Co Ltd | 熱搬送装置 |
WO2002080249A1 (fr) * | 2001-03-28 | 2002-10-10 | Tokyo Electron Limited | Dispositif de traitement au plasma |
WO2005045913A1 (ja) * | 2003-11-05 | 2005-05-19 | Tokyo Electron Limited | プラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
TW200914646A (en) | 2009-04-01 |
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