WO2008114685A1 - 太陽電池の製造方法および該太陽電池 - Google Patents

太陽電池の製造方法および該太陽電池 Download PDF

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Publication number
WO2008114685A1
WO2008114685A1 PCT/JP2008/054615 JP2008054615W WO2008114685A1 WO 2008114685 A1 WO2008114685 A1 WO 2008114685A1 JP 2008054615 W JP2008054615 W JP 2008054615W WO 2008114685 A1 WO2008114685 A1 WO 2008114685A1
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WO
WIPO (PCT)
Prior art keywords
layer
solar cell
light
absorbing
metal electrode
Prior art date
Application number
PCT/JP2008/054615
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English (en)
French (fr)
Inventor
Naoki Fujiwara
Yuki Matsui
Shigeru Aoyama
Akihiro Funamoto
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Omron Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Omron Corporation filed Critical Omron Corporation
Priority to JP2009505172A priority Critical patent/JPWO2008114685A1/ja
Publication of WO2008114685A1 publication Critical patent/WO2008114685A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

太陽電池１は、基板２と太陽光を吸収するための光吸収層５および光吸収層５の上に積層された各層により構成されている。基板２にはソーダライムガラス３上に金属電極４が形成された基板が用いられており、金属電極４上には凹凸形状が形成されている。光吸収層５は、凹凸形状に沿った形の層が複数形成された構成である。その光吸収層５の上にはバッファ層９が形成され、バッファ層９の形状は金属電極４上の凹凸形状に沿った形状となっている。バッファ層９の上には半絶縁層１０、透明電極層１１、反射防止膜層１２が形成されている。
PCT/JP2008/054615 2007-03-14 2008-03-13 太陽電池の製造方法および該太陽電池 WO2008114685A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009505172A JPWO2008114685A1 (ja) 2007-03-14 2008-03-13 太陽電池の製造方法および該太陽電池

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-065115 2007-03-14
JP2007065115 2007-03-14

Publications (1)

Publication Number Publication Date
WO2008114685A1 true WO2008114685A1 (ja) 2008-09-25

Family

ID=39765794

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054615 WO2008114685A1 (ja) 2007-03-14 2008-03-13 太陽電池の製造方法および該太陽電池

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Country Link
JP (1) JPWO2008114685A1 (ja)
WO (1) WO2008114685A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101103897B1 (ko) 2009-10-30 2012-01-12 엘지이노텍 주식회사 태양전지 및 이의 제조방법
JP2014187235A (ja) * 2013-03-25 2014-10-02 Nippon Telegr & Teleph Corp <Ntt> 太陽電池
JP2014236181A (ja) * 2013-06-05 2014-12-15 シャープ株式会社 光電変換素子

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04317318A (ja) * 1991-04-16 1992-11-09 Sanyo Electric Co Ltd ３次元格子構造の製造方法および結晶埋込方法
JPH07135328A (ja) * 1993-11-09 1995-05-23 Sanyo Electric Co Ltd 光起電力装置
JPH07283429A (ja) * 1994-04-04 1995-10-27 Hitachi Ltd 薄膜太陽電池の製造方法
JP2005136106A (ja) * 2003-10-29 2005-05-26 Kyocera Corp 単結晶サファイア基板とその製造方法及び半導体発光素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04317318A (ja) * 1991-04-16 1992-11-09 Sanyo Electric Co Ltd ３次元格子構造の製造方法および結晶埋込方法
JPH07135328A (ja) * 1993-11-09 1995-05-23 Sanyo Electric Co Ltd 光起電力装置
JPH07283429A (ja) * 1994-04-04 1995-10-27 Hitachi Ltd 薄膜太陽電池の製造方法
JP2005136106A (ja) * 2003-10-29 2005-05-26 Kyocera Corp 単結晶サファイア基板とその製造方法及び半導体発光素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101103897B1 (ko) 2009-10-30 2012-01-12 엘지이노텍 주식회사 태양전지 및 이의 제조방법
JP2014187235A (ja) * 2013-03-25 2014-10-02 Nippon Telegr & Teleph Corp <Ntt> 太陽電池
JP2014236181A (ja) * 2013-06-05 2014-12-15 シャープ株式会社 光電変換素子

Also Published As

Publication number Publication date
JPWO2008114685A1 (ja) 2010-07-01

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