WO2008114685A1 - 太陽電池の製造方法および該太陽電池 - Google Patents

太陽電池の製造方法および該太陽電池 Download PDF

Info

Publication number
WO2008114685A1
WO2008114685A1 PCT/JP2008/054615 JP2008054615W WO2008114685A1 WO 2008114685 A1 WO2008114685 A1 WO 2008114685A1 JP 2008054615 W JP2008054615 W JP 2008054615W WO 2008114685 A1 WO2008114685 A1 WO 2008114685A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
solar cell
light
absorbing
metal electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/054615
Other languages
English (en)
French (fr)
Inventor
Naoki Fujiwara
Yuki Matsui
Shigeru Aoyama
Akihiro Funamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Corp
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Corp, Omron Tateisi Electronics Co filed Critical Omron Corp
Priority to JP2009505172A priority Critical patent/JPWO2008114685A1/ja
Publication of WO2008114685A1 publication Critical patent/WO2008114685A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

太陽電池１は、基板２と太陽光を吸収するための光吸収層５および光吸収層５の上に積層された各層により構成されている。基板２にはソーダライムガラス３上に金属電極４が形成された基板が用いられており、金属電極４上には凹凸形状が形成されている。光吸収層５は、凹凸形状に沿った形の層が複数形成された構成である。その光吸収層５の上にはバッファ層９が形成され、バッファ層９の形状は金属電極４上の凹凸形状に沿った形状となっている。バッファ層９の上には半絶縁層１０、透明電極層１１、反射防止膜層１２が形成されている。
PCT/JP2008/054615 2007-03-14 2008-03-13 太陽電池の製造方法および該太陽電池 Ceased WO2008114685A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009505172A JPWO2008114685A1 (ja) 2007-03-14 2008-03-13 太陽電池の製造方法および該太陽電池

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007065115 2007-03-14
JP2007-065115 2007-03-14

Publications (1)

Publication Number Publication Date
WO2008114685A1 true WO2008114685A1 (ja) 2008-09-25

Family

ID=39765794

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/054615 Ceased WO2008114685A1 (ja) 2007-03-14 2008-03-13 太陽電池の製造方法および該太陽電池

Country Status (2)

Country Link
JP (1) JPWO2008114685A1 (ja)
WO (1) WO2008114685A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101103897B1 (ko) 2009-10-30 2012-01-12 엘지이노텍 주식회사 태양전지 및 이의 제조방법
JP2014187235A (ja) * 2013-03-25 2014-10-02 Nippon Telegr & Teleph Corp <Ntt> 太陽電池
JP2014236181A (ja) * 2013-06-05 2014-12-15 シャープ株式会社 光電変換素子

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04317318A (ja) * 1991-04-16 1992-11-09 Sanyo Electric Co Ltd ３次元格子構造の製造方法および結晶埋込方法
JPH07135328A (ja) * 1993-11-09 1995-05-23 Sanyo Electric Co Ltd 光起電力装置
JPH07283429A (ja) * 1994-04-04 1995-10-27 Hitachi Ltd 薄膜太陽電池の製造方法
JP2005136106A (ja) * 2003-10-29 2005-05-26 Kyocera Corp 単結晶サファイア基板とその製造方法及び半導体発光素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04317318A (ja) * 1991-04-16 1992-11-09 Sanyo Electric Co Ltd ３次元格子構造の製造方法および結晶埋込方法
JPH07135328A (ja) * 1993-11-09 1995-05-23 Sanyo Electric Co Ltd 光起電力装置
JPH07283429A (ja) * 1994-04-04 1995-10-27 Hitachi Ltd 薄膜太陽電池の製造方法
JP2005136106A (ja) * 2003-10-29 2005-05-26 Kyocera Corp 単結晶サファイア基板とその製造方法及び半導体発光素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101103897B1 (ko) 2009-10-30 2012-01-12 엘지이노텍 주식회사 태양전지 및 이의 제조방법
JP2014187235A (ja) * 2013-03-25 2014-10-02 Nippon Telegr & Teleph Corp <Ntt> 太陽電池
JP2014236181A (ja) * 2013-06-05 2014-12-15 シャープ株式会社 光電変換素子

Also Published As

Publication number Publication date
JPWO2008114685A1 (ja) 2010-07-01

Similar Documents

Publication Publication Date Title
WO2006110341A3 (en) Nano-structured photovoltaic solar cells and related methods
CN102113133B (zh) 光伏玻璃叠层制品和层状制品
WO2010126572A3 (en) Bifacial solar cells with back surface reflector
CN100495734C (zh) 太阳能电池组件封装用玻璃板
WO2008082723A3 (en) Method and structure for fabricating solar cells using a thick layer transfer process
WO2009099282A3 (en) Solar cell having multiple transparent conductive layers and manufacturing method thereof
WO2012018649A3 (en) Cooperative photovoltaic networks and photovoltaic cell adaptations for use therein
CN100391011C (zh) 用于太阳能电池的防护玻璃罩
WO2009019401A3 (fr) Substrat de face avant de cellule photovoltaïque et utilisation d&#39;un substrat pour une face avant de cellule photovoltaïque
WO2007014288A3 (en) Method and system for manufacturing solar panels using an integrated solar cell using a plurality of photovoltaic regions
WO2011087878A3 (en) Manufacture of thin film solar cells with high conversion efficiency
WO2006101741A3 (en) Scalable photovoltaic cell and solar panel manufacturing with improved wiring
WO2009072592A1 (ja) 集積型薄膜光電変換装置とその製造方法
WO2011037374A3 (en) Solar cell module and method of manufacturing the same
WO2008122046A3 (en) Method and system for assembling a solar cell package
CN102064223B (zh) 一种太阳能电池组件盖板玻璃及太阳能电池组件
CN202205777U (zh) 一种建材型双面玻璃光伏构件
KR20090003573A (ko) 건축외장용 태양전지 모듈
CN202513170U (zh) 一种薄膜太阳能电池用高透光导电膜玻璃
WO2012031102A3 (en) Thin film silicon solar cell in multi-junction configuration on textured glass
WO2009022853A3 (en) Thin film type solar cell and method for manufacturing the same
WO2008114685A1 (ja) 太陽電池の製造方法および該太陽電池
WO2014180019A1 (zh) 太阳能模块
CN202487586U (zh) 一种彩色太阳能电池组件
WO2010141145A3 (en) Pseudo-periodic structure for use in thin film solar cells

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08722019

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009505172

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08722019

Country of ref document: EP

Kind code of ref document: A1