WO2008112086A3 - Electroplating process - Google Patents
Electroplating process Download PDFInfo
- Publication number
- WO2008112086A3 WO2008112086A3 PCT/US2008/002702 US2008002702W WO2008112086A3 WO 2008112086 A3 WO2008112086 A3 WO 2008112086A3 US 2008002702 W US2008002702 W US 2008002702W WO 2008112086 A3 WO2008112086 A3 WO 2008112086A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- processes
- electroplating process
- recessed
- useful
- semiconductor wafer
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000009713 electroplating Methods 0.000 title abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/002—Cell separation, e.g. membranes, diaphragms
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
This invention provides processes for selectively electroplating metal layers into recessed topographic features on the surface of a conductive substrate. The processes are useful for fabricating metal circuit patterns, for example for creating copper interconnects between integrated circuit elements embedded in a thin layer of dielectric material on the surface of a semiconductor wafer.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/683,478 US20080217182A1 (en) | 2007-03-08 | 2007-03-08 | Electroplating process |
US11/683,478 | 2007-03-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008112086A2 WO2008112086A2 (en) | 2008-09-18 |
WO2008112086A3 true WO2008112086A3 (en) | 2009-04-30 |
Family
ID=39708959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2008/002702 WO2008112086A2 (en) | 2007-03-08 | 2008-02-29 | Electroplating process |
Country Status (3)
Country | Link |
---|---|
US (1) | US20080217182A1 (en) |
TW (1) | TW200848553A (en) |
WO (1) | WO2008112086A2 (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI495767B (en) * | 2010-09-02 | 2015-08-11 | Electroplating Eng | Iridium plating solution and method of plating using the same |
CN102400190A (en) * | 2010-09-17 | 2012-04-04 | 日本电镀工程股份有限公司 | Iridium plating solution and electroplate method thereof |
US9017528B2 (en) | 2011-04-14 | 2015-04-28 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
US9005409B2 (en) | 2011-04-14 | 2015-04-14 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
EP2818585B1 (en) * | 2012-02-23 | 2019-11-27 | Toyota Jidosha Kabushiki Kaisha | Film formation device and film formation method for forming metal film |
JP5949696B2 (en) * | 2013-08-07 | 2016-07-13 | トヨタ自動車株式会社 | Metal film forming apparatus and film forming method |
JP5915602B2 (en) | 2013-08-07 | 2016-05-11 | トヨタ自動車株式会社 | Metal film forming apparatus and film forming method |
JP6024714B2 (en) * | 2013-10-03 | 2016-11-16 | トヨタ自動車株式会社 | Nickel solution for film formation and film forming method using the same |
US9303329B2 (en) | 2013-11-11 | 2016-04-05 | Tel Nexx, Inc. | Electrochemical deposition apparatus with remote catholyte fluid management |
JP6011559B2 (en) * | 2014-02-14 | 2016-10-19 | トヨタ自動車株式会社 | Metal film deposition method |
JP6197813B2 (en) | 2015-03-11 | 2017-09-20 | トヨタ自動車株式会社 | Metal film forming apparatus and film forming method |
US20170167042A1 (en) | 2015-12-14 | 2017-06-15 | International Business Machines Corporation | Selective solder plating |
JP7135958B2 (en) * | 2019-03-22 | 2022-09-13 | トヨタ自動車株式会社 | Metal film deposition equipment |
CN112002752B (en) | 2020-07-27 | 2023-04-21 | 北海惠科光电技术有限公司 | Preparation method of source and drain electrodes, preparation method of array substrate and display mechanism |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000077278A1 (en) * | 1999-06-14 | 2000-12-21 | Cvc Products, Inc. | Method and apparatus for electroplating depressions of a substrate simultaneously preventing plating on the substrate surface using a membrane cover |
US20060175202A1 (en) * | 2004-11-30 | 2006-08-10 | Stephen Mazur | Membrane-limited selective electroplating of a conductive surface |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3282875A (en) * | 1964-07-22 | 1966-11-01 | Du Pont | Fluorocarbon vinyl ether polymers |
US4176215A (en) * | 1978-03-13 | 1979-11-27 | E. I. Du Pont De Nemours And Company | Ion-exchange structures of copolymer blends useful in electrolytic cells |
US4358545A (en) * | 1980-06-11 | 1982-11-09 | The Dow Chemical Company | Sulfonic acid electrolytic cell having flourinated polymer membrane with hydration product less than 22,000 |
US4940525A (en) * | 1987-05-08 | 1990-07-10 | The Dow Chemical Company | Low equivalent weight sulfonic fluoropolymers |
US5112448A (en) * | 1989-11-28 | 1992-05-12 | The Boeing Company | Self-aligned process for fabrication of interconnect structures in semiconductor applications |
US5773480A (en) * | 1993-09-21 | 1998-06-30 | Ballard Power Systems Inc. | Trifluorostyrene and substituted trifluorostyrene copolymeric compositions and ion-exchange membranes formed therefrom |
US5547551A (en) * | 1995-03-15 | 1996-08-20 | W. L. Gore & Associates, Inc. | Ultra-thin integral composite membrane |
US5700398A (en) * | 1994-12-14 | 1997-12-23 | International Business Machines Corporation | Composition containing a polymer and conductive filler and use thereof |
US6110333A (en) * | 1997-05-02 | 2000-08-29 | E. I. Du Pont De Nemours And Company | Composite membrane with highly crystalline porous support |
US6359019B1 (en) * | 1997-11-12 | 2002-03-19 | Ballard Power Systems Inc. | Graft polymeric membranes and ion-exchange membranes formed therefrom |
US6534116B2 (en) * | 2000-08-10 | 2003-03-18 | Nutool, Inc. | Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence |
US7335153B2 (en) * | 2001-12-28 | 2008-02-26 | Bio Array Solutions Ltd. | Arrays of microparticles and methods of preparation thereof |
US20040149584A1 (en) * | 2002-12-27 | 2004-08-05 | Mizuki Nagai | Plating method |
-
2007
- 2007-03-08 US US11/683,478 patent/US20080217182A1/en not_active Abandoned
-
2008
- 2008-02-29 WO PCT/US2008/002702 patent/WO2008112086A2/en active Application Filing
- 2008-03-06 TW TW097107935A patent/TW200848553A/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000077278A1 (en) * | 1999-06-14 | 2000-12-21 | Cvc Products, Inc. | Method and apparatus for electroplating depressions of a substrate simultaneously preventing plating on the substrate surface using a membrane cover |
US20060175202A1 (en) * | 2004-11-30 | 2006-08-10 | Stephen Mazur | Membrane-limited selective electroplating of a conductive surface |
Also Published As
Publication number | Publication date |
---|---|
WO2008112086A2 (en) | 2008-09-18 |
TW200848553A (en) | 2008-12-16 |
US20080217182A1 (en) | 2008-09-11 |
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