WO2008108349A1 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

Info

Publication number
WO2008108349A1
WO2008108349A1 PCT/JP2008/053807 JP2008053807W WO2008108349A1 WO 2008108349 A1 WO2008108349 A1 WO 2008108349A1 JP 2008053807 W JP2008053807 W JP 2008053807W WO 2008108349 A1 WO2008108349 A1 WO 2008108349A1
Authority
WO
WIPO (PCT)
Prior art keywords
ground
processing apparatus
plasma processing
processed
path
Prior art date
Application number
PCT/JP2008/053807
Other languages
English (en)
French (fr)
Inventor
Hiroshi Aoyama
Original Assignee
Shibaura Mechatronics Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corporation filed Critical Shibaura Mechatronics Corporation
Priority to JP2009502581A priority Critical patent/JP5129234B2/ja
Publication of WO2008108349A1 publication Critical patent/WO2008108349A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　グランドに接続され、被処理物を載置可能な載置台と、被処理物に対向して設けられ、被処理物との間に形成される処理空間にプラズマを発生させる電圧が印加されるカソード体と、処理空間の周囲を囲んで設けられ、グランドに接続されたアノード体と、被処理物の非処理領域に接触して非処理領域を覆う内側端部と、アノード体に接して設けられた外側端部とを有する押さえ部材とを備えたプラズマ処理装置であって、被処理物から押さえ部材を介してグランドに流れる電流の経路のインピーダンスよりも、被処理物から載置台を介してグランドに流れる電流の経路のインピーダンスを小さくした。
PCT/JP2008/053807 2007-03-06 2008-03-04 プラズマ処理装置 WO2008108349A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009502581A JP5129234B2 (ja) 2007-03-06 2008-03-04 プラズマ処理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-055122 2007-03-06
JP2007055122 2007-03-06

Publications (1)

Publication Number Publication Date
WO2008108349A1 true WO2008108349A1 (ja) 2008-09-12

Family

ID=39738227

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053807 WO2008108349A1 (ja) 2007-03-06 2008-03-04 プラズマ処理装置

Country Status (3)

Country Link
JP (1) JP5129234B2 (ja)
TW (1) TW200902739A (ja)
WO (1) WO2008108349A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2007275690B2 (en) * 2006-07-21 2013-01-17 Gilead Sciences, Inc. Antiviral protease inhibitors
WO2016152089A1 (ja) * 2015-03-25 2016-09-29 株式会社アルバック 高周波スパッタリング装置及びスパッタリング方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07207428A (ja) * 1994-01-19 1995-08-08 Sony Disc Technol:Kk マグネトロンスパッタリング装置
JPH1021586A (ja) * 1996-07-02 1998-01-23 Sony Corp Ｄｃスパッタリング装置
JP2003059130A (ja) * 2001-08-21 2003-02-28 Sony Corp 成膜装置、成膜方法、光記録媒体の製造方法および光記録媒体
JP2004339581A (ja) * 2003-05-16 2004-12-02 Matsushita Electric Ind Co Ltd 薄膜形成装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07207428A (ja) * 1994-01-19 1995-08-08 Sony Disc Technol:Kk マグネトロンスパッタリング装置
JPH1021586A (ja) * 1996-07-02 1998-01-23 Sony Corp Ｄｃスパッタリング装置
JP2003059130A (ja) * 2001-08-21 2003-02-28 Sony Corp 成膜装置、成膜方法、光記録媒体の製造方法および光記録媒体
JP2004339581A (ja) * 2003-05-16 2004-12-02 Matsushita Electric Ind Co Ltd 薄膜形成装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2007275690B2 (en) * 2006-07-21 2013-01-17 Gilead Sciences, Inc. Antiviral protease inhibitors
WO2016152089A1 (ja) * 2015-03-25 2016-09-29 株式会社アルバック 高周波スパッタリング装置及びスパッタリング方法
JP6030813B1 (ja) * 2015-03-25 2016-11-24 株式会社アルバック 高周波スパッタリング装置及びスパッタリング方法
CN106795625A (zh) * 2015-03-25 2017-05-31 株式会社爱发科 高频溅射装置及溅射方法
US9960018B2 (en) 2015-03-25 2018-05-01 Ulvac, Inc. RF sputtering apparatus and sputtering method
CN106795625B (zh) * 2015-03-25 2018-05-22 株式会社爱发科 高频溅射装置及溅射方法

Also Published As

Publication number Publication date
JPWO2008108349A1 (ja) 2010-06-17
TW200902739A (en) 2009-01-16
JP5129234B2 (ja) 2013-01-30

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WO2008108349A1 (ja) プラズマ処理装置

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