WO2008105451A1 - ＳｒＴｉＯ３膜の成膜方法および記憶媒体 - Google Patents

ＳｒＴｉＯ３膜の成膜方法および記憶媒体 Download PDF

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Publication number
WO2008105451A1
WO2008105451A1 PCT/JP2008/053391 JP2008053391W WO2008105451A1 WO 2008105451 A1 WO2008105451 A1 WO 2008105451A1 JP 2008053391 W JP2008053391 W JP 2008053391W WO 2008105451 A1 WO2008105451 A1 WO 2008105451A1
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WO
WIPO (PCT)
Prior art keywords
forming
storage medium
substrate
srtio3 film
srtio3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/053391
Other languages
English (en)
French (fr)
Inventor
Akinobu Kakimoto
Yumiko Kawano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020097018326A priority Critical patent/KR101156305B1/ko
Priority to CN200880000105XA priority patent/CN101542695B/zh
Priority to US12/529,356 priority patent/US8361550B2/en
Publication of WO2008105451A1 publication Critical patent/WO2008105451A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/404—Oxides of alkaline earth metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Insulating Materials (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

　処理容器内に基板を配置し、基板を加熱し、Ｓｒ原料とＴｉ原料と酸化剤とを気体状で前記処理容器内に導入し、加熱された基板上でこれらガスを反応させ、基板上にＳｒＴｉＯ３膜を成膜するにあたり、Ｓｒ原料として、Ｓｒアミン化合物またはＳｒイミン化合物を用いる。
PCT/JP2008/053391 2007-03-01 2008-02-27 ＳｒＴｉＯ３膜の成膜方法および記憶媒体 Ceased WO2008105451A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020097018326A KR101156305B1 (ko) 2007-03-01 2008-02-27 ＳｒＴｉＯ3막의 성막 방법 및 기억 매체
CN200880000105XA CN101542695B (zh) 2007-03-01 2008-02-27 SrTiO3膜的成膜方法
US12/529,356 US8361550B2 (en) 2007-03-01 2008-02-27 Method for forming SrTiO3 film and storage medium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-051374 2007-03-01
JP2007051374A JP5248025B2 (ja) 2007-03-01 2007-03-01 ＳｒＴｉＯ３膜の成膜方法およびコンピュータ読取可能な記憶媒体

Publications (1)

Publication Number Publication Date
WO2008105451A1 true WO2008105451A1 (ja) 2008-09-04

Family

ID=39721276

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053391 Ceased WO2008105451A1 (ja) 2007-03-01 2008-02-27 ＳｒＴｉＯ３膜の成膜方法および記憶媒体

Country Status (6)

Country Link
US (1) US8361550B2 (ja)
JP (1) JP5248025B2 (ja)
KR (1) KR101156305B1 (ja)
CN (1) CN101542695B (ja)
TW (1) TW200902747A (ja)
WO (1) WO2008105451A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
JP5419420B2 (ja) * 2008-11-04 2014-02-19 東京エレクトロン株式会社 成膜方法および成膜装置、ならびに記憶媒体
JP5411512B2 (ja) * 2009-01-09 2014-02-12 東京エレクトロン株式会社 Ｇｅ−Ｓｂ−Ｔｅ系膜の成膜方法および記憶媒体
JP2010225740A (ja) * 2009-03-23 2010-10-07 Tokyo Electron Ltd 基板処理方法および基板処理装置
US10927459B2 (en) * 2017-10-16 2021-02-23 Asm Ip Holding B.V. Systems and methods for atomic layer deposition
CN107935030B (zh) * 2017-12-19 2019-04-12 沈阳理工大学 一种高温喷涂固化制备钛酸锶涂层的方法
JP7224175B2 (ja) * 2018-12-26 2023-02-17 東京エレクトロン株式会社 成膜装置及び方法
JP2023161122A (ja) * 2022-04-25 2023-11-07 キオクシア株式会社 成膜装置及び成膜方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07188271A (ja) * 1993-12-28 1995-07-25 Tori Chem Kenkyusho:Kk 金属化合物
JPH07268634A (ja) * 1994-03-28 1995-10-17 Mitsubishi Electric Corp 液体原料用ｃｖｄ装置、および液体原料を用いたｃｖｄプロセスと、その液体原料
JP2002367982A (ja) * 2001-05-07 2002-12-20 Samsung Electronics Co Ltd 多成分系薄膜及びその形成方法
JP2005166965A (ja) * 2003-12-03 2005-06-23 Ulvac Japan Ltd 薄膜製造方法
JP2005277426A (ja) * 2000-06-08 2005-10-06 Genitech Inc 薄膜形成方法
JP2006310865A (ja) * 2005-04-29 2006-11-09 Boc Group Inc:The 原子層堆積に溶液系前駆体を用いる方法及び装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1358326A (zh) * 1999-06-10 2002-07-10 塞姆特里克斯公司 高介电常数的金属氧化物薄膜
US6697919B2 (en) * 2000-06-10 2004-02-24 Hewlett-Packard Development Company, L.P. System and method for limited fanout daisy chaining of cache invalidation requests in a shared-memory multiprocessor system
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
US6730164B2 (en) * 2002-08-28 2004-05-04 Micron Technology, Inc. Systems and methods for forming strontium- and/or barium-containing layers
US7416994B2 (en) * 2005-06-28 2008-08-26 Micron Technology, Inc. Atomic layer deposition systems and methods including metal beta-diketiminate compounds
JP2009529579A (ja) * 2006-03-10 2009-08-20 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド チタネート、ランタネート及びタンタレート誘電体の膜の原子層堆積及び化学蒸着のための前駆体組成物
WO2009020888A1 (en) * 2007-08-08 2009-02-12 Advanced Technology Materials, Inc. Strontium and barium precursors for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition
US8471049B2 (en) * 2008-12-10 2013-06-25 Air Product And Chemicals, Inc. Precursors for depositing group 4 metal-containing films

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07188271A (ja) * 1993-12-28 1995-07-25 Tori Chem Kenkyusho:Kk 金属化合物
JPH07268634A (ja) * 1994-03-28 1995-10-17 Mitsubishi Electric Corp 液体原料用ｃｖｄ装置、および液体原料を用いたｃｖｄプロセスと、その液体原料
JP2005277426A (ja) * 2000-06-08 2005-10-06 Genitech Inc 薄膜形成方法
JP2002367982A (ja) * 2001-05-07 2002-12-20 Samsung Electronics Co Ltd 多成分系薄膜及びその形成方法
JP2005166965A (ja) * 2003-12-03 2005-06-23 Ulvac Japan Ltd 薄膜製造方法
JP2006310865A (ja) * 2005-04-29 2006-11-09 Boc Group Inc:The 原子層堆積に溶液系前駆体を用いる方法及び装置

Also Published As

Publication number Publication date
CN101542695A (zh) 2009-09-23
US8361550B2 (en) 2013-01-29
KR20090107081A (ko) 2009-10-12
US20100015335A1 (en) 2010-01-21
KR101156305B1 (ko) 2012-06-13
CN101542695B (zh) 2011-03-30
JP5248025B2 (ja) 2013-07-31
JP2008218555A (ja) 2008-09-18
TW200902747A (en) 2009-01-16

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