WO2008097736A3 - Methods using block copolymer self-assembly for sub-lithographic patterning - Google Patents
Methods using block copolymer self-assembly for sub-lithographic patterning Download PDFInfo
- Publication number
- WO2008097736A3 WO2008097736A3 PCT/US2008/052022 US2008052022W WO2008097736A3 WO 2008097736 A3 WO2008097736 A3 WO 2008097736A3 US 2008052022 W US2008052022 W US 2008052022W WO 2008097736 A3 WO2008097736 A3 WO 2008097736A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sub
- methods
- assembly
- block copolymer
- lithographic patterning
- Prior art date
Links
- 229920001400 block copolymer Polymers 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 238000001459 lithography Methods 0.000 title abstract 2
- 238000001338 self-assembly Methods 0.000 title 1
- 229920000359 diblock copolymer Polymers 0.000 abstract 1
- 229920006030 multiblock copolymer Polymers 0.000 abstract 1
- 229920000428 triblock copolymer Polymers 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0147—Film patterning
- B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0198—Manufacture or treatment of microstructural devices or systems in or on a substrate for making a masking layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/947—Subphotolithographic processing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Analytical Chemistry (AREA)
- Composite Materials (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Graft Or Block Polymers (AREA)
- Laminated Bodies (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008800017448A CN101578232B (en) | 2007-02-08 | 2008-01-25 | Methods using block copolymer self-assembly for sub-lithographic patterning |
EP08728282.8A EP2121514B1 (en) | 2007-02-08 | 2008-01-25 | Methods using block copolymer self-assembly for sub-lithographic patterning |
KR1020097016598A KR101350072B1 (en) | 2007-02-08 | 2008-01-25 | Methods using block copolymer self-assembly for sub-lithographic patterning |
JP2009549163A JP5574089B2 (en) | 2007-02-08 | 2008-01-25 | Method of using block copolymer self-assembly for sublithographic patterning |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/703,911 US7964107B2 (en) | 2007-02-08 | 2007-02-08 | Methods using block copolymer self-assembly for sub-lithographic patterning |
US11/703,911 | 2007-02-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008097736A2 WO2008097736A2 (en) | 2008-08-14 |
WO2008097736A3 true WO2008097736A3 (en) | 2008-11-20 |
Family
ID=39682332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2008/052022 WO2008097736A2 (en) | 2007-02-08 | 2008-01-25 | Methods using block copolymer self-assembly for sub-lithographic patterning |
Country Status (8)
Country | Link |
---|---|
US (3) | US7964107B2 (en) |
EP (1) | EP2121514B1 (en) |
JP (1) | JP5574089B2 (en) |
KR (1) | KR101350072B1 (en) |
CN (1) | CN101578232B (en) |
SG (1) | SG178758A1 (en) |
TW (1) | TWI469183B (en) |
WO (1) | WO2008097736A2 (en) |
Families Citing this family (214)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3940546B2 (en) * | 1999-06-07 | 2007-07-04 | 株式会社東芝 | Pattern forming method and pattern forming material |
US20110256308A1 (en) * | 2001-03-30 | 2011-10-20 | Buerger Jr Walter Richard | Algorithmic processing to create features |
US7579278B2 (en) * | 2006-03-23 | 2009-08-25 | Micron Technology, Inc. | Topography directed patterning |
US8852851B2 (en) | 2006-07-10 | 2014-10-07 | Micron Technology, Inc. | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same |
JP4421582B2 (en) * | 2006-08-15 | 2010-02-24 | 株式会社東芝 | Pattern formation method |
US7790045B1 (en) * | 2006-09-13 | 2010-09-07 | Massachusetts Institute Of Technology | Formation of close-packed sphere arrays in V-shaped grooves |
US8394483B2 (en) | 2007-01-24 | 2013-03-12 | Micron Technology, Inc. | Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly |
US7767099B2 (en) * | 2007-01-26 | 2010-08-03 | International Business Machines Corporaiton | Sub-lithographic interconnect patterning using self-assembling polymers |
US8083953B2 (en) | 2007-03-06 | 2011-12-27 | Micron Technology, Inc. | Registered structure formation via the application of directed thermal energy to diblock copolymer films |
US8557128B2 (en) | 2007-03-22 | 2013-10-15 | Micron Technology, Inc. | Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers |
US7999160B2 (en) * | 2007-03-23 | 2011-08-16 | International Business Machines Corporation | Orienting, positioning, and forming nanoscale structures |
US8294139B2 (en) | 2007-06-21 | 2012-10-23 | Micron Technology, Inc. | Multilayer antireflection coatings, structures and devices including the same and methods of making the same |
US7959975B2 (en) | 2007-04-18 | 2011-06-14 | Micron Technology, Inc. | Methods of patterning a substrate |
US8097175B2 (en) | 2008-10-28 | 2012-01-17 | Micron Technology, Inc. | Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure |
US8372295B2 (en) | 2007-04-20 | 2013-02-12 | Micron Technology, Inc. | Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method |
US7923373B2 (en) * | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
US8404124B2 (en) | 2007-06-12 | 2013-03-26 | Micron Technology, Inc. | Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces |
US8080615B2 (en) | 2007-06-19 | 2011-12-20 | Micron Technology, Inc. | Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide |
US7790350B2 (en) * | 2007-07-30 | 2010-09-07 | International Business Machines Corporation | Method and materials for patterning a neutral surface |
US8283258B2 (en) | 2007-08-16 | 2012-10-09 | Micron Technology, Inc. | Selective wet etching of hafnium aluminum oxide films |
JP4445538B2 (en) * | 2007-09-26 | 2010-04-07 | 株式会社東芝 | Pattern formation method |
US8105960B2 (en) * | 2007-10-09 | 2012-01-31 | International Business Machines Corporation | Self-assembled sidewall spacer |
KR101355167B1 (en) * | 2007-12-14 | 2014-01-28 | 삼성전자주식회사 | Method of forming fine pattern using block copolymer having at least three polymer block |
US8017194B2 (en) * | 2008-01-17 | 2011-09-13 | International Business Machines Corporation | Method and material for a thermally crosslinkable random copolymer |
US8215074B2 (en) * | 2008-02-05 | 2012-07-10 | International Business Machines Corporation | Pattern formation employing self-assembled material |
US8999492B2 (en) | 2008-02-05 | 2015-04-07 | Micron Technology, Inc. | Method to produce nanometer-sized features with directed assembly of block copolymers |
FR2927467B1 (en) * | 2008-02-08 | 2011-09-23 | Commissariat Energie Atomique | METHOD FOR PRODUCING A FLOATING GRID HAVING ALTERNANCE OF LINES IN FIRST AND SECOND MATERIALS |
US8101261B2 (en) | 2008-02-13 | 2012-01-24 | Micron Technology, Inc. | One-dimensional arrays of block copolymer cylinders and applications thereof |
US7906031B2 (en) * | 2008-02-22 | 2011-03-15 | International Business Machines Corporation | Aligning polymer films |
US8426313B2 (en) * | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference |
US8425982B2 (en) | 2008-03-21 | 2013-04-23 | Micron Technology, Inc. | Methods of improving long range order in self-assembly of block copolymer films with ionic liquids |
US8114300B2 (en) | 2008-04-21 | 2012-02-14 | Micron Technology, Inc. | Multi-layer method for formation of registered arrays of cylindrical pores in polymer films |
US8114301B2 (en) | 2008-05-02 | 2012-02-14 | Micron Technology, Inc. | Graphoepitaxial self-assembly of arrays of downward facing half-cylinders |
US7989307B2 (en) | 2008-05-05 | 2011-08-02 | Micron Technology, Inc. | Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same |
US10151981B2 (en) | 2008-05-22 | 2018-12-11 | Micron Technology, Inc. | Methods of forming structures supported by semiconductor substrates |
US8114468B2 (en) | 2008-06-18 | 2012-02-14 | Boise Technology, Inc. | Methods of forming a non-volatile resistive oxide memory array |
US8088551B2 (en) * | 2008-10-09 | 2012-01-03 | Micron Technology, Inc. | Methods of utilizing block copolymer to form patterns |
US8187480B2 (en) * | 2008-11-13 | 2012-05-29 | Seagate Technology, Llc | Ultra thin alignment walls for di-block copolymer |
US8362179B2 (en) | 2008-11-19 | 2013-01-29 | Wisconsin Alumni Research Foundation | Photopatternable imaging layers for controlling block copolymer microdomain orientation |
US8796155B2 (en) | 2008-12-04 | 2014-08-05 | Micron Technology, Inc. | Methods of fabricating substrates |
KR101572109B1 (en) | 2008-12-30 | 2015-11-27 | 삼성디스플레이 주식회사 | Method of manufacturing nano structure and method of manufacturing a pattern using the method |
KR101535227B1 (en) * | 2008-12-31 | 2015-07-08 | 삼성전자주식회사 | Method of forming fine pattern using block copolymer |
US8361704B2 (en) | 2009-01-12 | 2013-01-29 | International Business Machines Corporation | Method for reducing tip-to-tip spacing between lines |
US9330934B2 (en) | 2009-05-18 | 2016-05-03 | Micron Technology, Inc. | Methods of forming patterns on substrates |
US8398868B2 (en) * | 2009-05-19 | 2013-03-19 | International Business Machines Corporation | Directed self-assembly of block copolymers using segmented prepatterns |
US8834956B2 (en) * | 2009-06-22 | 2014-09-16 | Micron Technology, Inc. | Methods of utilizing block copolymer to form patterns |
JP5222805B2 (en) * | 2009-07-09 | 2013-06-26 | パナソニック株式会社 | Self-organized pattern forming method |
JP5484817B2 (en) * | 2009-08-04 | 2014-05-07 | 株式会社東芝 | Pattern forming method and semiconductor device manufacturing method |
US8247904B2 (en) * | 2009-08-13 | 2012-08-21 | International Business Machines Corporation | Interconnection between sublithographic-pitched structures and lithographic-pitched structures |
KR101109104B1 (en) | 2009-08-24 | 2012-02-16 | 한국기계연구원 | Forming method of nano-line pattern and manufacturing method of line polarizer |
JP5524228B2 (en) * | 2009-09-25 | 2014-06-18 | 株式会社東芝 | Pattern formation method |
KR101602942B1 (en) * | 2009-10-07 | 2016-03-15 | 삼성전자주식회사 | Method of forming pattern |
US8828493B2 (en) * | 2009-12-18 | 2014-09-09 | International Business Machines Corporation | Methods of directed self-assembly and layered structures formed therefrom |
US8623458B2 (en) * | 2009-12-18 | 2014-01-07 | International Business Machines Corporation | Methods of directed self-assembly, and layered structures formed therefrom |
US8821978B2 (en) * | 2009-12-18 | 2014-09-02 | International Business Machines Corporation | Methods of directed self-assembly and layered structures formed therefrom |
US8071467B2 (en) * | 2010-04-07 | 2011-12-06 | Micron Technology, Inc. | Methods of forming patterns, and methods of forming integrated circuits |
JP2011243655A (en) * | 2010-05-14 | 2011-12-01 | Hitachi Ltd | High polymer thin film, pattern media and their manufacturing methods, and surface modifying material |
US8486611B2 (en) * | 2010-07-14 | 2013-07-16 | Micron Technology, Inc. | Semiconductor constructions and methods of forming patterns |
FR2963355B1 (en) * | 2010-07-30 | 2013-07-12 | Centre Nat Rech Scient | NANOORGANIZED THIN FILMS BASED ON POLYSACCHARIDE BLOCK COPOLYMERS FOR NANOTECHNOLOGY APPLICATIONS. |
US8304493B2 (en) | 2010-08-20 | 2012-11-06 | Micron Technology, Inc. | Methods of forming block copolymers |
JP5171909B2 (en) * | 2010-09-16 | 2013-03-27 | 株式会社東芝 | Method for forming fine pattern |
US9233840B2 (en) | 2010-10-28 | 2016-01-12 | International Business Machines Corporation | Method for improving self-assembled polymer features |
US8673541B2 (en) * | 2010-10-29 | 2014-03-18 | Seagate Technology Llc | Block copolymer assembly methods and patterns formed thereby |
WO2012071330A1 (en) | 2010-11-24 | 2012-05-31 | Dow Corning Corporation | Controlling morphology of block copolymers |
US8734904B2 (en) | 2010-11-30 | 2014-05-27 | International Business Machines Corporation | Methods of forming topographical features using segregating polymer mixtures |
US20120135159A1 (en) * | 2010-11-30 | 2012-05-31 | Seagate Technology Llc | System and method for imprint-guided block copolymer nano-patterning |
US10538859B2 (en) | 2010-12-23 | 2020-01-21 | Asml Netherlands B.V. | Methods for providing patterned orientation templates for self-assemblable polymers for use in device lithography |
US8575032B2 (en) | 2011-05-05 | 2013-11-05 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
WO2012169620A1 (en) * | 2011-06-10 | 2012-12-13 | 東京応化工業株式会社 | Solvent-developable negative resist composition, resist pattern formation method, and method for forming pattern of layer including block copolymer |
NL2008951A (en) * | 2011-06-23 | 2013-01-02 | Asml Netherlands Bv | Self -assemblable polymer and methods for use in lithography. |
WO2012175342A2 (en) * | 2011-06-23 | 2012-12-27 | Asml Netherlands B.V. | Self-assemblable polymer and method for use in lithography |
CN102915907B (en) | 2011-08-02 | 2015-05-13 | 中芯国际集成电路制造(北京)有限公司 | Semiconductor device manufacturing method |
CN103781537B (en) | 2011-08-22 | 2016-04-06 | 陶氏环球技术有限责任公司 | The composite membrane formed by the polymer blend comprising self-assembled block copolymers |
US8691925B2 (en) | 2011-09-23 | 2014-04-08 | Az Electronic Materials (Luxembourg) S.A.R.L. | Compositions of neutral layer for directed self assembly block copolymers and processes thereof |
KR20130034778A (en) * | 2011-09-29 | 2013-04-08 | 주식회사 동진쎄미켐 | Method of forming fine pattern of semiconductor device using directed self assembly process |
CN103889888B (en) * | 2011-10-03 | 2017-04-26 | Asml荷兰有限公司 | Method to provide a patterned orientation template for a self-assemblable polymer |
CN103035510B (en) * | 2011-10-08 | 2015-08-19 | 中芯国际集成电路制造(上海)有限公司 | Contact through hole lithographic method |
US8703395B2 (en) * | 2011-10-28 | 2014-04-22 | Jsr Corporation | Pattern-forming method |
US8900963B2 (en) | 2011-11-02 | 2014-12-02 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related structures |
US10253187B2 (en) | 2011-11-08 | 2019-04-09 | Samsung Electronics Co., Ltd. | Nano-structure of block copolymer and method of manufacturing the same |
US8728714B2 (en) | 2011-11-17 | 2014-05-20 | Micron Technology, Inc. | Methods for adhering materials, for enhancing adhesion between materials, and for patterning materials, and related semiconductor device structures |
FR2983773B1 (en) * | 2011-12-09 | 2014-10-24 | Arkema France | PROCESS FOR PREPARING SURFACES |
CN103187245B (en) * | 2011-12-30 | 2015-06-17 | 中芯国际集成电路制造(上海)有限公司 | Method of photoetching of block copolymer through directed self-assembly |
US9177794B2 (en) * | 2012-01-13 | 2015-11-03 | Micron Technology, Inc. | Methods of patterning substrates |
US20130200498A1 (en) * | 2012-02-03 | 2013-08-08 | Applied Materials, Inc. | Methods and apparatus for lithography using a resist array |
US8961918B2 (en) | 2012-02-10 | 2015-02-24 | Rohm And Haas Electronic Materials Llc | Thermal annealing process |
WO2013119832A1 (en) * | 2012-02-10 | 2013-08-15 | Board Of Regents, The University Of Texas System | Anhydride copolymer top coats for orientation control of thin film block copolymers |
US9440196B2 (en) | 2012-02-21 | 2016-09-13 | Dow Global Technologies Llc | Composite membrane |
US8686109B2 (en) * | 2012-03-09 | 2014-04-01 | Az Electronic Materials (Luxembourg) S.A.R.L. | Methods and materials for removing metals in block copolymers |
JP6306810B2 (en) * | 2012-03-14 | 2018-04-04 | 東京応化工業株式会社 | Pattern forming method for layer containing base agent and block copolymer |
WO2013156240A1 (en) * | 2012-04-20 | 2013-10-24 | Asml Netherlands B.V. | Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers |
US9250528B2 (en) * | 2012-04-27 | 2016-02-02 | Asml Netherlands B.V. | Methods and compositions for providing spaced lithography features on a substrate by self-assembly of block copolymers |
US9005877B2 (en) * | 2012-05-15 | 2015-04-14 | Tokyo Electron Limited | Method of forming patterns using block copolymers and articles thereof |
US9298870B1 (en) | 2012-05-16 | 2016-03-29 | International Business Machines Corporation | Method for designing topographic patterns for directing the formation of self-assembled domains at specified locations on substrates |
FR2990885B1 (en) * | 2012-05-23 | 2014-09-19 | Arkema France | PROCESS FOR PREPARING SURFACES |
US8629048B1 (en) | 2012-07-06 | 2014-01-14 | Micron Technology, Inc. | Methods of forming a pattern on a substrate |
US8821739B2 (en) | 2012-07-12 | 2014-09-02 | Rohm And Haas Electronic Materials Llc | High temperature thermal annealing process |
US8821738B2 (en) | 2012-07-12 | 2014-09-02 | Rohm And Haas Electronic Materials Llc | Thermal annealing process |
JP6239813B2 (en) | 2012-07-18 | 2017-11-29 | 株式会社Screenセミコンダクターソリューションズ | Substrate processing apparatus and substrate processing method |
CN103633029B (en) * | 2012-08-28 | 2016-11-23 | 中国科学院微电子研究所 | Semiconductor structure and manufacture method thereof |
JP5818760B2 (en) | 2012-09-07 | 2015-11-18 | 株式会社東芝 | Pattern formation method |
JP5758363B2 (en) * | 2012-09-07 | 2015-08-05 | 株式会社東芝 | Pattern formation method |
US9034197B2 (en) | 2012-09-13 | 2015-05-19 | HGST Netherlands B.V. | Method for separately processing regions on a patterned medium |
US9153477B2 (en) * | 2012-09-28 | 2015-10-06 | Intel Corporation | Directed self assembly of block copolymers to form vias aligned with interconnects |
JP6141144B2 (en) * | 2012-10-02 | 2017-06-07 | 東京エレクトロン株式会社 | Substrate processing method, program, computer storage medium, and substrate processing system |
US9087699B2 (en) | 2012-10-05 | 2015-07-21 | Micron Technology, Inc. | Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure |
US9223214B2 (en) * | 2012-11-19 | 2015-12-29 | The Texas A&M University System | Self-assembled structures, method of manufacture thereof and articles comprising the same |
US8822130B2 (en) * | 2012-11-19 | 2014-09-02 | The Texas A&M University System | Self-assembled structures, method of manufacture thereof and articles comprising the same |
US8956808B2 (en) * | 2012-12-04 | 2015-02-17 | Globalfoundries Inc. | Asymmetric templates for forming non-periodic patterns using directed self-assembly materials |
US10280328B2 (en) * | 2012-12-18 | 2019-05-07 | Nissan Chemical Industries, Ltd. | Bottom layer film-forming composition of self-organizing film containing styrene structure |
KR101993255B1 (en) * | 2013-01-07 | 2019-06-26 | 삼성전자주식회사 | Method of forming contact holes |
US8790522B1 (en) * | 2013-02-11 | 2014-07-29 | Globalfoundries Inc. | Chemical and physical templates for forming patterns using directed self-assembly materials |
JP2014170802A (en) * | 2013-03-01 | 2014-09-18 | Toshiba Corp | Pattern forming method |
US20140273534A1 (en) * | 2013-03-14 | 2014-09-18 | Tokyo Electron Limited | Integration of absorption based heating bake methods into a photolithography track system |
US8980538B2 (en) * | 2013-03-14 | 2015-03-17 | Tokyo Electron Limited | Chemi-epitaxy in directed self-assembly applications using photo-decomposable agents |
US9147574B2 (en) | 2013-03-14 | 2015-09-29 | Tokyo Electron Limited | Topography minimization of neutral layer overcoats in directed self-assembly applications |
US9209014B2 (en) | 2013-03-15 | 2015-12-08 | Tokyo Electron Limited | Multi-step bake apparatus and method for directed self-assembly lithography control |
US20140273290A1 (en) * | 2013-03-15 | 2014-09-18 | Tokyo Electron Limited | Solvent anneal processing for directed-self assembly applications |
JP5802233B2 (en) | 2013-03-27 | 2015-10-28 | 株式会社東芝 | Pattern formation method |
KR102245179B1 (en) | 2013-04-03 | 2021-04-28 | 브레우어 사이언스, 인코포레이션 | Highly etch-resistant polymer block for use in block copolymers for directed self-assembly |
KR101961387B1 (en) * | 2013-04-10 | 2019-03-25 | 에스케이하이닉스 주식회사 | Method for fabricating semiconductor device |
US9229328B2 (en) | 2013-05-02 | 2016-01-05 | Micron Technology, Inc. | Methods of forming semiconductor device structures, and related semiconductor device structures |
US10457088B2 (en) * | 2013-05-13 | 2019-10-29 | Ridgefield Acquisition | Template for self assembly and method of making a self assembled pattern |
JP5981392B2 (en) * | 2013-06-19 | 2016-08-31 | 株式会社東芝 | Pattern formation method |
FR3008986B1 (en) | 2013-07-25 | 2016-12-30 | Arkema France | METHOD OF CONTROLLING THE PERIOD CHARACTERIZING THE MORPHOLOGY OBTAINED FROM A MIXTURE OF BLOCK COPOLYMER AND (CO) POLYMER FROM ONE OF THE BLOCKS |
KR102399752B1 (en) | 2013-09-04 | 2022-05-20 | 도쿄엘렉트론가부시키가이샤 | Uv-assisted stripping of hardened photoresist to create chemical templates for directed self-assembly |
US10014184B2 (en) | 2013-09-05 | 2018-07-03 | Applied Materials, Inc. | Methods and apparatus for forming a resist array using chemical mechanical planarization |
US9405189B2 (en) * | 2013-09-06 | 2016-08-02 | Rohm And Haas Electronic Materials Llc | Self-assembled structures, method of manufacture thereof and articles comprising the same |
US10078261B2 (en) | 2013-09-06 | 2018-09-18 | Rohm And Haas Electronic Materials Llc | Self-assembled structures, method of manufacture thereof and articles comprising the same |
JP5904981B2 (en) * | 2013-09-09 | 2016-04-20 | 株式会社東芝 | Pattern forming method, magnetic recording medium manufacturing method, and magnetic recording medium |
FR3010412B1 (en) * | 2013-09-09 | 2016-10-21 | Arkema France | PROCESS FOR OBTAINING NANO-STRUCTURE THICK FILMS OBTAINED FROM BLOCK COPOLYMERS |
FR3010413B1 (en) * | 2013-09-09 | 2015-09-25 | Arkema France | METHOD FOR CONTROLLING THE PERIOD OF A NANO-STRUCTURE ASSEMBLY COMPRISING A MIXTURE OF BLOCK COPOLYMERS |
FR3010414B1 (en) * | 2013-09-09 | 2015-09-25 | Arkema France | PROCESS FOR OBTAINING NANO-STRUCTURED THICK FILMS OBTAINED FROM A BLOCK COPOLYMER COMPOSITION |
TWI615885B (en) * | 2013-09-12 | 2018-02-21 | 聯華電子股份有限公司 | Patterning method |
US9625815B2 (en) * | 2013-09-27 | 2017-04-18 | Intel Corporation | Exposure activated chemically amplified directed self-assembly (DSA) for back end of line (BEOL) pattern cutting and plugging |
US9177795B2 (en) * | 2013-09-27 | 2015-11-03 | Micron Technology, Inc. | Methods of forming nanostructures including metal oxides |
US9093263B2 (en) | 2013-09-27 | 2015-07-28 | Az Electronic Materials (Luxembourg) S.A.R.L. | Underlayer composition for promoting self assembly and method of making and using |
JP2015076108A (en) * | 2013-10-07 | 2015-04-20 | 株式会社東芝 | Pattern formation method and manufacturing method of magnetic recording medium |
US9793137B2 (en) | 2013-10-20 | 2017-10-17 | Tokyo Electron Limited | Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines |
US9349604B2 (en) | 2013-10-20 | 2016-05-24 | Tokyo Electron Limited | Use of topography to direct assembly of block copolymers in grapho-epitaxial applications |
WO2015067433A1 (en) * | 2013-11-08 | 2015-05-14 | Asml Netherlands B.V. | Methodology to generate a guiding template for directed self-assembly |
EP3078690B1 (en) | 2013-12-06 | 2021-01-27 | LG Chem, Ltd. | Block copolymer |
JP6334706B2 (en) | 2013-12-06 | 2018-05-30 | エルジー・ケム・リミテッド | Block copolymer |
JP6402867B2 (en) | 2013-12-06 | 2018-10-10 | エルジー・ケム・リミテッド | Block copolymer |
EP3078693B1 (en) | 2013-12-06 | 2021-01-27 | LG Chem, Ltd. | Block copolymer |
JP6483695B2 (en) | 2013-12-06 | 2019-03-13 | エルジー・ケム・リミテッド | Block copolymer |
WO2015084124A1 (en) | 2013-12-06 | 2015-06-11 | 주식회사 엘지화학 | Block copolymer |
JP6419820B2 (en) | 2013-12-06 | 2018-11-07 | エルジー・ケム・リミテッド | Block copolymer |
EP3078694B1 (en) | 2013-12-06 | 2021-01-27 | LG Chem, Ltd. | Block copolymer |
WO2015084126A1 (en) | 2013-12-06 | 2015-06-11 | 주식회사 엘지화학 | Block copolymer |
US10227436B2 (en) | 2013-12-06 | 2019-03-12 | Lg Chem, Ltd. | Block copolymer |
EP3078688B1 (en) | 2013-12-06 | 2020-03-04 | LG Chem, Ltd. | Block copolymer |
CN105980342B (en) | 2013-12-06 | 2019-02-15 | 株式会社Lg化学 | Monomer and block copolymer |
EP3101043B1 (en) * | 2013-12-06 | 2021-01-27 | LG Chem, Ltd. | Block copolymer |
WO2015084133A1 (en) | 2013-12-06 | 2015-06-11 | 주식회사 엘지화학 | Block copolymer |
US9181449B2 (en) | 2013-12-16 | 2015-11-10 | Az Electronic Materials (Luxembourg) S.A.R.L. | Underlayer composition for promoting self assembly and method of making and using |
FR3014877B1 (en) * | 2013-12-17 | 2017-03-31 | Arkema France | METHOD FOR NANOSTRUCTURING A BLOCK COPOLYMER FILM FROM A NON-STRUCTURED BLOCK COPOLYMER BASED ON STYRENE AND METHYL METHACRYLATE, AND NANOSTRUCTURE BLOCK COPOLYMER FILM |
KR101674972B1 (en) | 2013-12-26 | 2016-11-10 | 한국과학기술원 | Formation method of nano scale patterning and intergrated device for electronic apparatus manufacturing thereof |
JP6558894B2 (en) * | 2013-12-31 | 2019-08-14 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | DESIGN OF COPOLYMER, METHOD FOR PRODUCING THE SAME AND ARTICLE CONTAINING THE SAME |
JP6702649B2 (en) | 2013-12-31 | 2020-06-03 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | Method for controlling the properties of block copolymers and articles made from block copolymers |
JP2015129261A (en) * | 2013-12-31 | 2015-07-16 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | Method of annealing block copolymer, article produced from block copolymer |
CN106104754B (en) * | 2014-01-16 | 2020-07-28 | 布鲁尔科技公司 | High CHI block copolymers for direct self-assembly |
TWI648320B (en) * | 2014-01-23 | 2019-01-21 | 東京應化工業股份有限公司 | Method of producing structure containing phase-separated structure, method of forming pattern and method of forming fine pattern |
US9195132B2 (en) * | 2014-01-30 | 2015-11-24 | Globalfoundries Inc. | Mask structures and methods of manufacturing |
KR102160791B1 (en) | 2014-02-03 | 2020-09-29 | 삼성디스플레이 주식회사 | Block copolymer and method of forming the same |
KR102176758B1 (en) * | 2014-02-10 | 2020-11-10 | 에스케이하이닉스 주식회사 | Structure and method for forming pattern using block copolymer materials |
US9489974B2 (en) | 2014-04-11 | 2016-11-08 | Seagate Technology Llc | Method of fabricating a BPM template using hierarchical BCP density patterns |
JP6177723B2 (en) | 2014-04-25 | 2017-08-09 | 東京エレクトロン株式会社 | Substrate processing method, program, computer storage medium, and substrate processing system |
US10410914B2 (en) | 2014-05-28 | 2019-09-10 | Asml Netherlands B.V. | Methods for providing lithography features on a substrate by self-assembly of block copolymers |
JP6122906B2 (en) | 2014-06-27 | 2017-04-26 | ダウ グローバル テクノロジーズ エルエルシー | Process for producing block copolymers and articles produced therefrom |
JP6356096B2 (en) * | 2014-06-27 | 2018-07-11 | ダウ グローバル テクノロジーズ エルエルシー | Process for producing block copolymers and articles produced therefrom |
US9275896B2 (en) * | 2014-07-28 | 2016-03-01 | GlobalFoundries, Inc. | Methods for fabricating integrated circuits using directed self-assembly |
JP2016058620A (en) * | 2014-09-11 | 2016-04-21 | 株式会社東芝 | Semiconductor device manufacturing method |
FR3025937B1 (en) * | 2014-09-16 | 2017-11-24 | Commissariat Energie Atomique | GRAPHO-EPITAXY METHOD FOR REALIZING PATTERNS ON THE SURFACE OF A SUBSTRATE |
JP2016066644A (en) | 2014-09-22 | 2016-04-28 | 株式会社東芝 | Method for manufacturing storage device |
US10287429B2 (en) | 2014-09-30 | 2019-05-14 | Lg Chem, Ltd. | Block copolymer |
EP3214102B1 (en) | 2014-09-30 | 2022-01-05 | LG Chem, Ltd. | Block copolymer |
WO2016053010A1 (en) | 2014-09-30 | 2016-04-07 | 주식회사 엘지화학 | Block copolymer |
US10633533B2 (en) | 2014-09-30 | 2020-04-28 | Lg Chem, Ltd. | Block copolymer |
JP6637495B2 (en) | 2014-09-30 | 2020-01-29 | エルジー・ケム・リミテッド | Manufacturing method of patterned substrate |
US10703897B2 (en) | 2014-09-30 | 2020-07-07 | Lg Chem, Ltd. | Block copolymer |
US10240035B2 (en) | 2014-09-30 | 2019-03-26 | Lg Chem, Ltd. | Block copolymer |
JP6532941B2 (en) | 2014-09-30 | 2019-06-19 | エルジー・ケム・リミテッド | Block copolymer |
WO2016053007A1 (en) | 2014-09-30 | 2016-04-07 | 주식회사 엘지화학 | Method for producing patterned substrate |
JP6394798B2 (en) | 2014-09-30 | 2018-09-26 | エルジー・ケム・リミテッド | Block copolymer |
KR20160056457A (en) | 2014-11-11 | 2016-05-20 | 삼성디스플레이 주식회사 | Wire grid polarizer and method for fabricating the same |
US9385129B2 (en) * | 2014-11-13 | 2016-07-05 | Tokyo Electron Limited | Method of forming a memory capacitor structure using a self-assembly pattern |
US20170345643A1 (en) * | 2014-12-24 | 2017-11-30 | Intel Corporation | Photodefinable alignment layer for chemical assisted patterning |
KR101969337B1 (en) * | 2015-02-17 | 2019-04-17 | 주식회사 엘지화학 | Solvent annealing process and device of block copolymer thin film |
KR101985802B1 (en) * | 2015-06-11 | 2019-06-04 | 주식회사 엘지화학 | Laminate |
KR102508525B1 (en) | 2015-10-19 | 2023-03-09 | 삼성전자주식회사 | Block copolymer and method of manufacturing integrated circuit device using the same |
US9576817B1 (en) | 2015-12-03 | 2017-02-21 | International Business Machines Corporation | Pattern decomposition for directed self assembly patterns templated by sidewall image transfer |
KR102637883B1 (en) * | 2015-12-11 | 2024-02-19 | 아이엠이씨 브이제트더블유 | A method for pattern formation on a substrate, associated semiconductor devices and uses of the method |
WO2017111926A1 (en) * | 2015-12-21 | 2017-06-29 | Intel Corporation | Triblock copolymers for self-aligning vias or contacts |
US9818623B2 (en) | 2016-03-22 | 2017-11-14 | Globalfoundries Inc. | Method of forming a pattern for interconnection lines and associated continuity blocks in an integrated circuit |
US9947597B2 (en) | 2016-03-31 | 2018-04-17 | Tokyo Electron Limited | Defectivity metrology during DSA patterning |
TWI754661B (en) | 2016-08-18 | 2022-02-11 | 德商馬克專利公司 | Polymer compositions for self-assembly applications |
US9818641B1 (en) | 2016-09-21 | 2017-11-14 | Globalfoundries Inc. | Apparatus and method of forming self-aligned cuts in mandrel and a non-mandrel lines of an array of metal lines |
US9818640B1 (en) | 2016-09-21 | 2017-11-14 | Globalfoundries Inc. | Apparatus and method of forming self-aligned cuts in a non-mandrel line of an array of metal lines |
US9852986B1 (en) * | 2016-11-28 | 2017-12-26 | Globalfoundries Inc. | Method of patterning pillars to form variable continuity cuts in interconnection lines of an integrated circuit |
TW201831544A (en) | 2016-12-14 | 2018-09-01 | 美商布魯爾科技公司 | High-chi block copolymers for directed self-assembly |
US9812351B1 (en) | 2016-12-15 | 2017-11-07 | Globalfoundries Inc. | Interconnection cells having variable width metal lines and fully-self aligned continuity cuts |
US9887127B1 (en) | 2016-12-15 | 2018-02-06 | Globalfoundries Inc. | Interconnection lines having variable widths and partially self-aligned continuity cuts |
US10002786B1 (en) | 2016-12-15 | 2018-06-19 | Globalfoundries Inc. | Interconnection cells having variable width metal lines and fully-self aligned variable length continuity cuts |
US10043703B2 (en) | 2016-12-15 | 2018-08-07 | Globalfoundries Inc. | Apparatus and method for forming interconnection lines having variable pitch and variable widths |
FR3060422B1 (en) * | 2016-12-16 | 2019-05-10 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | METHOD FOR FUNCTIONALIZING A SUBSTRATE |
JP6835969B2 (en) | 2016-12-21 | 2021-02-24 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | New compositions and methods for self-assembly of block copolymers |
JP6811638B2 (en) | 2017-02-14 | 2021-01-13 | 株式会社Screenホールディングス | Substrate processing method and its equipment |
US20180323061A1 (en) * | 2017-05-03 | 2018-11-08 | Tokyo Electron Limited | Self-Aligned Triple Patterning Process Utilizing Organic Spacers |
KR102359267B1 (en) | 2017-10-20 | 2022-02-07 | 삼성전자주식회사 | Integrated circuit device and method of manufacturing the same |
CN109712871B (en) * | 2018-12-27 | 2021-09-21 | 中国科学院微电子研究所 | Semiconductor structure and manufacturing method thereof |
KR102668454B1 (en) | 2018-12-28 | 2024-05-23 | 삼성전자주식회사 | Semiconductor device including capacitor and method of forming the same |
CN113299684A (en) * | 2021-04-27 | 2021-08-24 | 长江先进存储产业创新中心有限责任公司 | Method for manufacturing memory address line |
KR20220149828A (en) | 2021-04-30 | 2022-11-09 | 삼성전자주식회사 | Semiconductor devices |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10197137B4 (en) * | 2001-01-08 | 2008-07-31 | International Business Machines Corp. | Process for the production of microstructures |
US7189435B2 (en) | 2001-03-14 | 2007-03-13 | University Of Massachusetts | Nanofabrication |
US6746825B2 (en) | 2001-10-05 | 2004-06-08 | Wisconsin Alumni Research Foundation | Guided self-assembly of block copolymer films on interferometrically nanopatterned substrates |
JP3967114B2 (en) * | 2001-11-22 | 2007-08-29 | 株式会社東芝 | Processing method |
US20040142578A1 (en) | 2002-03-28 | 2004-07-22 | Ulrich Wiesner | Thin film nanostructures |
US20040124092A1 (en) | 2002-12-30 | 2004-07-01 | Black Charles T. | Inorganic nanoporous membranes and methods to form same |
US7045851B2 (en) | 2003-06-20 | 2006-05-16 | International Business Machines Corporation | Nonvolatile memory device using semiconductor nanocrystals and method of forming same |
JP3926360B2 (en) * | 2004-10-13 | 2007-06-06 | 株式会社東芝 | Pattern forming method and structure processing method using the same |
JP5377857B2 (en) | 2004-11-22 | 2013-12-25 | ウィスコンシン・アラムナイ・リサーチ・ファウンデーション | Method and composition for non-periodic pattern copolymer films |
US20080032238A1 (en) * | 2004-11-23 | 2008-02-07 | Lu Jennifer Q | System and method for controlling the size and/or distribution of catalyst nanoparticles for nanostructure growth |
JP2006215052A (en) * | 2005-02-01 | 2006-08-17 | Hitachi Maxell Ltd | Method for forming fine groove and fine groove substrate obtained by the same |
US20060249784A1 (en) | 2005-05-06 | 2006-11-09 | International Business Machines Corporation | Field effect transistor device including an array of channel elements and methods for forming |
JP2006324501A (en) * | 2005-05-19 | 2006-11-30 | Toshiba Corp | Phase-change memory and its manufacturing method |
US7723009B2 (en) * | 2006-06-02 | 2010-05-25 | Micron Technology, Inc. | Topography based patterning |
US7605081B2 (en) * | 2006-06-19 | 2009-10-20 | International Business Machines Corporation | Sub-lithographic feature patterning using self-aligned self-assembly polymers |
JP4673266B2 (en) * | 2006-08-03 | 2011-04-20 | 日本電信電話株式会社 | Pattern forming method and mold |
US8394483B2 (en) * | 2007-01-24 | 2013-03-12 | Micron Technology, Inc. | Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly |
US7999160B2 (en) * | 2007-03-23 | 2011-08-16 | International Business Machines Corporation | Orienting, positioning, and forming nanoscale structures |
US7959975B2 (en) * | 2007-04-18 | 2011-06-14 | Micron Technology, Inc. | Methods of patterning a substrate |
US7521094B1 (en) * | 2008-01-14 | 2009-04-21 | International Business Machines Corporation | Method of forming polymer features by directed self-assembly of block copolymers |
US8215074B2 (en) * | 2008-02-05 | 2012-07-10 | International Business Machines Corporation | Pattern formation employing self-assembled material |
KR102017205B1 (en) * | 2012-12-07 | 2019-09-03 | 삼성디스플레이 주식회사 | Method of manufacturing nano structure and method of forming a pattern using it |
KR101993255B1 (en) * | 2013-01-07 | 2019-06-26 | 삼성전자주식회사 | Method of forming contact holes |
-
2007
- 2007-02-08 US US11/703,911 patent/US7964107B2/en active Active
-
2008
- 2008-01-25 EP EP08728282.8A patent/EP2121514B1/en active Active
- 2008-01-25 SG SG2012008686A patent/SG178758A1/en unknown
- 2008-01-25 JP JP2009549163A patent/JP5574089B2/en active Active
- 2008-01-25 WO PCT/US2008/052022 patent/WO2008097736A2/en active Application Filing
- 2008-01-25 KR KR1020097016598A patent/KR101350072B1/en active IP Right Grant
- 2008-01-25 CN CN2008800017448A patent/CN101578232B/en active Active
- 2008-02-05 TW TW97104724A patent/TWI469183B/en active
-
2011
- 2011-06-09 US US13/157,168 patent/US8562844B2/en active Active
-
2013
- 2013-06-07 US US13/912,800 patent/US8974678B2/en active Active
Non-Patent Citations (1)
Title |
---|
PARK S-M ET AL: "Directed assembly of lamellae-forming block copolymers by using chemically and topographically patterned substrates", ADVANCED MATERIALS 20070219 WILEY-VCH VERLAG DE, vol. 19, no. 4, 26 January 2007 (2007-01-26), pages 607 - 611, XP007905662 * |
Also Published As
Publication number | Publication date |
---|---|
SG178758A1 (en) | 2012-03-29 |
TW200845124A (en) | 2008-11-16 |
US20080193658A1 (en) | 2008-08-14 |
TWI469183B (en) | 2015-01-11 |
US8974678B2 (en) | 2015-03-10 |
US8562844B2 (en) | 2013-10-22 |
JP5574089B2 (en) | 2014-08-20 |
CN101578232B (en) | 2012-05-30 |
KR101350072B1 (en) | 2014-01-14 |
EP2121514B1 (en) | 2016-03-09 |
US7964107B2 (en) | 2011-06-21 |
KR20100014768A (en) | 2010-02-11 |
WO2008097736A2 (en) | 2008-08-14 |
CN101578232A (en) | 2009-11-11 |
US20130270226A1 (en) | 2013-10-17 |
JP2010522643A (en) | 2010-07-08 |
US20110240596A1 (en) | 2011-10-06 |
EP2121514A2 (en) | 2009-11-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2008097736A3 (en) | Methods using block copolymer self-assembly for sub-lithographic patterning | |
EP2186837A4 (en) | Aba triblock copolymer and process for producing the same | |
WO2007019439A3 (en) | Block copolymer compositions and uses thereof | |
WO2008091741A3 (en) | Two-dimensional arrays of holes with sub-lithographic diameters formed by block copolymer self-assembly | |
AU2003212158A1 (en) | Amphiphilic diblock, triblock and star-block copolymers and their pharmaceutical compositions | |
WO2006091947A3 (en) | Force diversion apparatus and methods and devices including the same | |
WO2009134635A3 (en) | Graphoepitaxial self-assembly of arrays of half-cylinders formed on a substrate | |
EP1663853A4 (en) | Methods, devices and compositions for depositing and orienting nanostructures | |
EP2266819A4 (en) | Method for producing modified conjugated diene polymer/copolymer, modified conjugated diene polymer/copolymer, and rubber composition and tier using the same | |
MX294779B (en) | Biodegradable diblock copolymers having reverse thermal gelation. | |
WO2007076146A3 (en) | Compositions comprising novel copolymers and electronic devices made with such compositions | |
WO2010054266A3 (en) | Multiblock copolymers | |
EP1806370A4 (en) | Copolymer and upper film-forming composition | |
AU2003247378A1 (en) | Conjugated diene/monovinylarene block copolymers blends | |
WO2009102551A3 (en) | One-dimensional arrays of block copolymer cylinders and applications thereof | |
WO2007002681A3 (en) | Electrically conductive polymer compositions | |
WO2008005371A3 (en) | Poly(orthoester) polymers, and methods of making and using same | |
WO2006107763A3 (en) | Hot melt pressure sensitive adhesives based on blends of styrene/butadiene copolymers | |
WO2010054154A3 (en) | Bifidobacteria crispr sequences | |
WO2004099068A3 (en) | Nanofiber surfaces for use in enhanced surface area applications | |
WO2007004039A3 (en) | An implement clamping system, a base jaw and top jaw for it | |
WO2007047498A3 (en) | Formation and encapsulation of molecular bilayer and monolayer membranes | |
AU2006282042A8 (en) | Nanoparticle fabrication methods, systems, and materials | |
HK1115758A1 (en) | Hydrogenated block copolymer and composition thereof | |
EP2050773A4 (en) | Hydrogenated block copolymers and crosslinking compositions containing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200880001744.8 Country of ref document: CN |
|
ENP | Entry into the national phase |
Ref document number: 2009549163 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020097016598 Country of ref document: KR |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2008728282 Country of ref document: EP |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08728282 Country of ref document: EP Kind code of ref document: A2 |