WO2008093663A1 - 有機薄膜トランジスタ、その製造方法及び有機半導体デバイス - Google Patents

有機薄膜トランジスタ、その製造方法及び有機半導体デバイス Download PDF

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Publication number
WO2008093663A1
WO2008093663A1 PCT/JP2008/051268 JP2008051268W WO2008093663A1 WO 2008093663 A1 WO2008093663 A1 WO 2008093663A1 JP 2008051268 W JP2008051268 W JP 2008051268W WO 2008093663 A1 WO2008093663 A1 WO 2008093663A1
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WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
organic thin
organic semiconductor
organic
Prior art date
Application number
PCT/JP2008/051268
Other languages
English (en)
French (fr)
Inventor
Reiko Obuchi
Katsura Hirai
Original Assignee
Konica Minolta Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Holdings, Inc. filed Critical Konica Minolta Holdings, Inc.
Priority to JP2008556101A priority Critical patent/JPWO2008093663A1/ja
Publication of WO2008093663A1 publication Critical patent/WO2008093663A1/ja

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Thin Film Transistor (AREA)

Abstract

　簡便なウェットプロセスで、静電気による障害を防止し、位置精度の高い有機半導体層を形成する方法であって、支持体上に、有機半導体材料を塗布溶媒に溶解した有機半導体溶液を塗布・乾燥することにより有機半導体層を形成する有機薄膜トランジスタの製造方法において、該塗布溶媒が比誘電率７以上５０以下である極性溶媒を含む２種類以上の溶媒からなることを特徴とする。
PCT/JP2008/051268 2007-01-31 2008-01-29 有機薄膜トランジスタ、その製造方法及び有機半導体デバイス WO2008093663A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008556101A JPWO2008093663A1 (ja) 2007-01-31 2008-01-29 有機薄膜トランジスタ、その製造方法及び有機半導体デバイス

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007020757 2007-01-31
JP2007-020757 2007-01-31

Publications (1)

Publication Number Publication Date
WO2008093663A1 true WO2008093663A1 (ja) 2008-08-07

Family

ID=39673973

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051268 WO2008093663A1 (ja) 2007-01-31 2008-01-29 有機薄膜トランジスタ、その製造方法及び有機半導体デバイス

Country Status (2)

Country Link
JP (1) JPWO2008093663A1 (ja)
WO (1) WO2008093663A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013211384A (ja) * 2012-03-30 2013-10-10 Dainippon Printing Co Ltd 有機半導体層の形成方法および形成装置
JP2014175392A (ja) * 2013-03-07 2014-09-22 Tokyo Institute Of Technology 有機薄膜の製造方法、及び有機半導体デバイス
JP2016506066A (ja) * 2012-11-29 2016-02-25 スマートケム リミテッド 有機半導体配合物

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005122278A1 (ja) * 2004-06-10 2005-12-22 Konica Minolta Holdings, Inc. 有機半導体薄膜、有機半導体デバイス、有機薄膜トランジスタ及び有機エレクトロルミネッセンス素子
US20060033282A1 (en) * 2004-08-11 2006-02-16 Fenwick Daniel P Practice target for sport projectiles
WO2006137233A1 (ja) * 2005-06-21 2006-12-28 Konica Minolta Holdings, Inc. 有機半導体材料薄膜の形成方法および有機薄膜トランジスタの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4992427B2 (ja) * 2004-09-22 2012-08-08 コニカミノルタホールディングス株式会社 薄膜トランジスタ
JP2006269740A (ja) * 2005-03-24 2006-10-05 Fuji Electric Holdings Co Ltd 薄膜の形成方法
CN100578744C (zh) * 2005-06-24 2010-01-06 柯尼卡美能达控股株式会社 有机半导体膜的形成方法、有机半导体膜及有机薄膜晶体管
JP5504564B2 (ja) * 2007-01-16 2014-05-28 ソニー株式会社 半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005122278A1 (ja) * 2004-06-10 2005-12-22 Konica Minolta Holdings, Inc. 有機半導体薄膜、有機半導体デバイス、有機薄膜トランジスタ及び有機エレクトロルミネッセンス素子
US20060033282A1 (en) * 2004-08-11 2006-02-16 Fenwick Daniel P Practice target for sport projectiles
WO2006137233A1 (ja) * 2005-06-21 2006-12-28 Konica Minolta Holdings, Inc. 有機半導体材料薄膜の形成方法および有機薄膜トランジスタの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013211384A (ja) * 2012-03-30 2013-10-10 Dainippon Printing Co Ltd 有機半導体層の形成方法および形成装置
JP2016506066A (ja) * 2012-11-29 2016-02-25 スマートケム リミテッド 有機半導体配合物
JP2014175392A (ja) * 2013-03-07 2014-09-22 Tokyo Institute Of Technology 有機薄膜の製造方法、及び有機半導体デバイス

Also Published As

Publication number Publication date
JPWO2008093663A1 (ja) 2010-05-20

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