WO2008087740A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
WO2008087740A1
WO2008087740A1 PCT/JP2007/050839 JP2007050839W WO2008087740A1 WO 2008087740 A1 WO2008087740 A1 WO 2008087740A1 JP 2007050839 W JP2007050839 W JP 2007050839W WO 2008087740 A1 WO2008087740 A1 WO 2008087740A1
Authority
WO
WIPO (PCT)
Prior art keywords
chip
circuits
semiconductor device
asic
storage device
Prior art date
Application number
PCT/JP2007/050839
Other languages
French (fr)
Japanese (ja)
Inventor
Yoshihiro Mabuchi
Original Assignee
Liquid Design Systems, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Liquid Design Systems, Inc. filed Critical Liquid Design Systems, Inc.
Priority to CN2007800500602A priority Critical patent/CN101617404B/en
Priority to PCT/JP2007/050839 priority patent/WO2008087740A1/en
Priority to KR1020097017236A priority patent/KR101049640B1/en
Publication of WO2008087740A1 publication Critical patent/WO2008087740A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
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    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
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    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
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    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
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    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
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    • H01L2924/01047—Silver [Ag]
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
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    • H01L2924/19101—Disposition of discrete passive components
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    • H01L2924/30107—Inductance

Abstract

A semiconductor device in which the transfer rate can be enhanced between chips without causing any noise or crosstalk. Input/output circuits, i.e. input circuits (27, 37) and output circuits (26, 36), are arranged directly beneath every connection pads (21, 31) for connecting a storage device chip (20) and the chip in an ASIC (30). The circuits are arranged in array or lattice and the storage device chip (20) and the ASIC (30) are mounted to face each other on the both surfaces of the wiring chip.
PCT/JP2007/050839 2007-01-19 2007-01-19 Semiconductor device WO2008087740A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2007800500602A CN101617404B (en) 2007-01-19 2007-01-19 Semiconductor device
PCT/JP2007/050839 WO2008087740A1 (en) 2007-01-19 2007-01-19 Semiconductor device
KR1020097017236A KR101049640B1 (en) 2007-01-19 2007-01-19 Semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/050839 WO2008087740A1 (en) 2007-01-19 2007-01-19 Semiconductor device

Publications (1)

Publication Number Publication Date
WO2008087740A1 true WO2008087740A1 (en) 2008-07-24

Family

ID=39635749

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/050839 WO2008087740A1 (en) 2007-01-19 2007-01-19 Semiconductor device

Country Status (3)

Country Link
KR (1) KR101049640B1 (en)
CN (1) CN101617404B (en)
WO (1) WO2008087740A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5968736B2 (en) * 2012-09-14 2016-08-10 ルネサスエレクトロニクス株式会社 Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003332440A (en) * 2002-05-07 2003-11-21 Megic Corp Design and assembly for high-performance subsystem
JP2005217205A (en) * 2004-01-29 2005-08-11 Nec Electronics Corp Three-dimensional semiconductor device of chip multilayer structure and spacer chip used therein
JP3895756B1 (en) * 2005-11-30 2007-03-22 株式会社システム・ファブリケーション・テクノロジーズ Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4105409B2 (en) * 2001-06-22 2008-06-25 株式会社ルネサステクノロジ Multi-chip module manufacturing method
JP3948393B2 (en) * 2002-03-13 2007-07-25 ソニー株式会社 Semiconductor device and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003332440A (en) * 2002-05-07 2003-11-21 Megic Corp Design and assembly for high-performance subsystem
JP2005217205A (en) * 2004-01-29 2005-08-11 Nec Electronics Corp Three-dimensional semiconductor device of chip multilayer structure and spacer chip used therein
JP3895756B1 (en) * 2005-11-30 2007-03-22 株式会社システム・ファブリケーション・テクノロジーズ Semiconductor device

Also Published As

Publication number Publication date
KR20100006558A (en) 2010-01-19
CN101617404A (en) 2009-12-30
CN101617404B (en) 2012-06-06
KR101049640B1 (en) 2011-07-14

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