SG137738A1 - Lead frame and semiconductor device using the same - Google Patents

Lead frame and semiconductor device using the same

Info

Publication number
SG137738A1
SG137738A1 SG200700808-9A SG2007008089A SG137738A1 SG 137738 A1 SG137738 A1 SG 137738A1 SG 2007008089 A SG2007008089 A SG 2007008089A SG 137738 A1 SG137738 A1 SG 137738A1
Authority
SG
Singapore
Prior art keywords
die pad
radiator plate
inner leads
lead frame
sides
Prior art date
Application number
SG200700808-9A
Inventor
Yoichiro Nozaki
Yasuhiro Takehana
Akira Oga
Toshiyuki Fukuda
Seiji Fujiwara
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of SG137738A1 publication Critical patent/SG137738A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49548Cross section geometry
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49568Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2924/351Thermal stress

Abstract

A lead frame includes: a die pad for holding a semiconductor chip; a radiator plate extending outward from one side face of the die pad and another side face thereof opposite the one side; a plurality of inner leads arranged opposite respective sides of the die pad other than the sides from which the radiator plate extends so as to interpose the die pad; and a plurality of outer leads formed outside the plurality of inner leads and connected to the inner leads. At least one of the plurality of inner leads serves as a ground lead connected to the die pad. In the radiator plate, an island bonding area of which potential is equal to that of the die pad is formed, a first slit is formed around three sides of the island bonding area, and the other side is connected to the radiator plate through a joint part.
SG200700808-9A 2006-05-09 2007-02-02 Lead frame and semiconductor device using the same SG137738A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006130369A JP4705881B2 (en) 2006-05-09 2006-05-09 Lead frame and semiconductor device using the same

Publications (1)

Publication Number Publication Date
SG137738A1 true SG137738A1 (en) 2007-12-28

Family

ID=38684338

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200700808-9A SG137738A1 (en) 2006-05-09 2007-02-02 Lead frame and semiconductor device using the same

Country Status (4)

Country Link
US (1) US20070262409A1 (en)
JP (1) JP4705881B2 (en)
CN (1) CN101071796A (en)
SG (1) SG137738A1 (en)

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Publication number Priority date Publication date Assignee Title
JP5026848B2 (en) * 2007-04-19 2012-09-19 スタンレー電気株式会社 Optical semiconductor device and manufacturing method thereof
JP2012089563A (en) * 2010-10-15 2012-05-10 Sanken Electric Co Ltd Semiconductor module
CN102034784B (en) * 2010-11-10 2013-06-05 吴江巨丰电子有限公司 28K lead frame
JP5885987B2 (en) * 2011-10-05 2016-03-16 ローム株式会社 Semiconductor device
CN106611753A (en) * 2015-10-26 2017-05-03 无锡华润矽科微电子有限公司 Chip packaging frame and chip packaging structure
CN106783753A (en) * 2016-12-21 2017-05-31 伍昭云 Semiconductor devices
US10242935B2 (en) * 2017-08-31 2019-03-26 Nxp Usa, Inc. Packaged semiconductor device and method for forming
CN109192715B (en) * 2018-09-20 2024-03-22 江苏长电科技股份有限公司 Lead frame structure, packaging structure and manufacturing method thereof
EP3671829B1 (en) * 2018-12-17 2023-09-27 Nexperia B.V. Leadframe assembly for a semiconductor device
JP7353121B2 (en) * 2019-10-08 2023-09-29 キヤノン株式会社 Semiconductor devices and equipment
CN112563233B (en) * 2020-12-09 2023-04-11 天水七四九电子有限公司 Planar packaging part and production method thereof
WO2023176267A1 (en) * 2022-03-17 2023-09-21 ローム株式会社 Semiconductor device

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JPH01244654A (en) * 1988-03-25 1989-09-29 Nec Kyushu Ltd Lead frame
US5291060A (en) * 1989-10-16 1994-03-01 Shinko Electric Industries Co., Ltd. Lead frame and semiconductor device using same
JP2886250B2 (en) * 1990-03-26 1999-04-26 株式会社日立製作所 Semiconductor device
US5583375A (en) * 1990-06-11 1996-12-10 Hitachi, Ltd. Semiconductor device with lead structure within the planar area of the device
KR0148077B1 (en) * 1994-08-16 1998-08-01 김광호 Semiconductor package having division pad
US5780772A (en) * 1997-01-24 1998-07-14 National Semiconductor Corporation Solution to mold wire sweep in fine pitch devices
US5869898A (en) * 1997-04-25 1999-02-09 Nec Corporation Lead-frame having interdigitated signal and ground leads with high frequency leads positioned adjacent a corner and shielded by ground leads on either side thereof
JP3063847B2 (en) * 1998-05-01 2000-07-12 日本電気株式会社 Lead frame and semiconductor device using the same
JP3566109B2 (en) * 1998-11-04 2004-09-15 株式会社デンソー Resin-sealed semiconductor device
JP2001085588A (en) * 1999-09-10 2001-03-30 Mitsumi Electric Co Ltd Lead frame and semiconductor device
JP3895570B2 (en) * 2000-12-28 2007-03-22 株式会社ルネサステクノロジ Semiconductor device
US6661083B2 (en) * 2001-02-27 2003-12-09 Chippac, Inc Plastic semiconductor package
JP2002334965A (en) * 2001-05-08 2002-11-22 Kunifumi Komiya Package for high-frequency device
JP2003204027A (en) * 2002-01-09 2003-07-18 Matsushita Electric Ind Co Ltd Lead frame and its manufacturing method, resin sealed semiconductor device and its manufacturing method
TWI250632B (en) * 2003-05-28 2006-03-01 Siliconware Precision Industries Co Ltd Ground-enhancing semiconductor package and lead frame
JP4469654B2 (en) * 2004-05-13 2010-05-26 パナソニック株式会社 Semiconductor device and manufacturing method of semiconductor device
US8536688B2 (en) * 2004-05-25 2013-09-17 Stats Chippac Ltd. Integrated circuit leadframe and fabrication method therefor
JP4255934B2 (en) * 2005-08-26 2009-04-22 シャープ株式会社 Semiconductor device and electronic device using the semiconductor device

Also Published As

Publication number Publication date
US20070262409A1 (en) 2007-11-15
JP2007305671A (en) 2007-11-22
JP4705881B2 (en) 2011-06-22
CN101071796A (en) 2007-11-14

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