WO2008074875A3 - Heterojonction a interface intrinsequement amorphe - Google Patents

Heterojonction a interface intrinsequement amorphe Download PDF

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Publication number
WO2008074875A3
WO2008074875A3 PCT/EP2007/064373 EP2007064373W WO2008074875A3 WO 2008074875 A3 WO2008074875 A3 WO 2008074875A3 EP 2007064373 W EP2007064373 W EP 2007064373W WO 2008074875 A3 WO2008074875 A3 WO 2008074875A3
Authority
WO
WIPO (PCT)
Prior art keywords
heterojunction
layer
amorphous interface
intrinsically amorphous
back face
Prior art date
Application number
PCT/EP2007/064373
Other languages
English (en)
Other versions
WO2008074875A2 (fr
Inventor
I Cabarrocas Pere Roca
Jerome Damon-Lacoste
Original Assignee
Centre Nat Rech Scient
Ecole Polytech
I Cabarrocas Pere Roca
Jerome Damon-Lacoste
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient, Ecole Polytech, I Cabarrocas Pere Roca, Jerome Damon-Lacoste filed Critical Centre Nat Rech Scient
Priority to EP07857992A priority Critical patent/EP2126980A2/fr
Priority to JP2009542077A priority patent/JP5567345B2/ja
Priority to US12/520,309 priority patent/US20090308453A1/en
Publication of WO2008074875A2 publication Critical patent/WO2008074875A2/fr
Publication of WO2008074875A3 publication Critical patent/WO2008074875A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

L'invention concerne une structure (100) pour applications photovoltaïques, comprenant : une première couche (10) en matériau semiconducteur cristallin présentant une face avant (1 ) pour recevoir et/ou émettre des photons et une face arrière (2); un contact arrière (40) en matériau conducteur situé du côté de la face arrière (2); caractérisée en ce qu'elle comprend en outre une deuxième couche (50) en silicium-germanium amorphe hydrogéné (a-SiGe:H) entre la face arrière (2) de la première couche (10) et le contact arrière (40). L'invention concerne aussi un procédé pour réaliser une telle structure (100).
PCT/EP2007/064373 2006-12-20 2007-12-20 Heterojonction a interface intrinsequement amorphe WO2008074875A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP07857992A EP2126980A2 (fr) 2006-12-20 2007-12-20 Heterojonction a interface intrinsequement amorphe
JP2009542077A JP5567345B2 (ja) 2006-12-20 2007-12-20 真性アモルファス界面を有するヘテロ接合
US12/520,309 US20090308453A1 (en) 2006-12-20 2007-12-20 Heterojunction with intrinsically amorphous interface

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0655711 2006-12-20
FR0655711A FR2910711B1 (fr) 2006-12-20 2006-12-20 Heterojonction a interface intrinsequement amorphe

Publications (2)

Publication Number Publication Date
WO2008074875A2 WO2008074875A2 (fr) 2008-06-26
WO2008074875A3 true WO2008074875A3 (fr) 2008-08-14

Family

ID=38370973

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2007/064373 WO2008074875A2 (fr) 2006-12-20 2007-12-20 Heterojonction a interface intrinsequement amorphe

Country Status (5)

Country Link
US (1) US20090308453A1 (fr)
EP (1) EP2126980A2 (fr)
JP (1) JP5567345B2 (fr)
FR (1) FR2910711B1 (fr)
WO (1) WO2008074875A2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101100109B1 (ko) * 2009-06-12 2011-12-29 한국철강 주식회사 광기전력 장치의 제조 방법
KR101106480B1 (ko) * 2009-06-12 2012-01-20 한국철강 주식회사 광기전력 장치의 제조 방법
KR101072472B1 (ko) * 2009-07-03 2011-10-11 한국철강 주식회사 광기전력 장치의 제조 방법
JP5484950B2 (ja) * 2010-02-23 2014-05-07 三洋電機株式会社 太陽電池
CN101866969B (zh) * 2010-05-27 2012-09-19 友达光电股份有限公司 太阳电池
US10043934B2 (en) * 2011-06-08 2018-08-07 International Business Machines Corporation Silicon-containing heterojunction photovoltaic element and device
WO2013073045A1 (fr) * 2011-11-18 2013-05-23 三洋電機株式会社 Cellule solaire et procédé de production pour cellule solaire
FR3007200B1 (fr) * 2013-06-17 2015-07-10 Commissariat Energie Atomique Cellule solaire a heterojonction de silicium
WO2021119092A1 (fr) * 2019-12-09 2021-06-17 Pacific Integrated Energy, Inc. Cellule solaire en silicium cristallin à couches minces utilisant une structure de rétro-réflecteur plasmonique-photonique nano-imprimée

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19524459A1 (de) * 1995-07-07 1997-01-09 Forschungszentrum Juelich Gmbh Solarzelle, insbesondere Konzentrator-Solarzelle oder Eine-Sonne-Solarzelle auf Siliziumbasis mit deponierten amorphen Silizium, Silizium-Germanium und/oder anderen Siliziumlegierungs-Schichten
EP1231648A2 (fr) * 1995-06-05 2002-08-14 Sharp Kabushiki Kaisha Cellule solaire et procédé de fabrication
EP1643564A2 (fr) * 2004-09-29 2006-04-05 Sanyo Electric Co., Ltd. Dispositif photovoltaique
EP1722419A1 (fr) * 2005-05-12 2006-11-15 General Electric Company Dispositif photovoltaique passivé en surface

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2614561B2 (ja) * 1991-10-08 1997-05-28 三洋電機株式会社 光起電力素子
US5719076A (en) * 1996-04-24 1998-02-17 United Solar Systems Corporation Method for the manufacture of semiconductor devices with optimized hydrogen content
AU729609B2 (en) * 1996-08-28 2001-02-08 Canon Kabushiki Kaisha Photovoltaic device
JP4208281B2 (ja) * 1998-02-26 2009-01-14 キヤノン株式会社 積層型光起電力素子
JP4036616B2 (ja) * 2000-01-31 2008-01-23 三洋電機株式会社 太陽電池モジュール
JP2006128630A (ja) * 2004-09-29 2006-05-18 Sanyo Electric Co Ltd 光起電力装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1231648A2 (fr) * 1995-06-05 2002-08-14 Sharp Kabushiki Kaisha Cellule solaire et procédé de fabrication
DE19524459A1 (de) * 1995-07-07 1997-01-09 Forschungszentrum Juelich Gmbh Solarzelle, insbesondere Konzentrator-Solarzelle oder Eine-Sonne-Solarzelle auf Siliziumbasis mit deponierten amorphen Silizium, Silizium-Germanium und/oder anderen Siliziumlegierungs-Schichten
EP1643564A2 (fr) * 2004-09-29 2006-04-05 Sanyo Electric Co., Ltd. Dispositif photovoltaique
EP1722419A1 (fr) * 2005-05-12 2006-11-15 General Electric Company Dispositif photovoltaique passivé en surface

Also Published As

Publication number Publication date
JP5567345B2 (ja) 2014-08-06
FR2910711A1 (fr) 2008-06-27
EP2126980A2 (fr) 2009-12-02
JP2010514183A (ja) 2010-04-30
WO2008074875A2 (fr) 2008-06-26
FR2910711B1 (fr) 2018-06-29
US20090308453A1 (en) 2009-12-17

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