WO2008047692A1 - Circuit d'oscillation à réglage de tension - Google Patents

Circuit d'oscillation à réglage de tension Download PDF

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Publication number
WO2008047692A1
WO2008047692A1 PCT/JP2007/069895 JP2007069895W WO2008047692A1 WO 2008047692 A1 WO2008047692 A1 WO 2008047692A1 JP 2007069895 W JP2007069895 W JP 2007069895W WO 2008047692 A1 WO2008047692 A1 WO 2008047692A1
Authority
WO
WIPO (PCT)
Prior art keywords
circuit
voltage
oscillation
variable
variable capacitance
Prior art date
Application number
PCT/JP2007/069895
Other languages
English (en)
Japanese (ja)
Inventor
Takeshi Ikeda
Hiroshi Miyagi
Original Assignee
Niigata Seimitsu Co., Ltd.
Ricoh Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Niigata Seimitsu Co., Ltd., Ricoh Co., Ltd. filed Critical Niigata Seimitsu Co., Ltd.
Publication of WO2008047692A1 publication Critical patent/WO2008047692A1/fr

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K4/00Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06Generating pulses having essentially a finite slope or stepped portions having triangular shape
    • H03K4/08Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
    • H03K4/48Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices
    • H03K4/50Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth voltage is produced across a capacitor
    • H03K4/52Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices in which a sawtooth voltage is produced across a capacitor using two semiconductor devices so coupled that the input of each one is derived from the output of the other, e.g. multivibrator
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1212Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
    • H03B5/1215Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1262Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
    • H03B5/1265Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors

Definitions

  • the present invention relates to a voltage controlled oscillation circuit (Voltage Controlled Oscillator: V C O) for controlling the oscillation frequency.
  • V C O Voltage Controlled Oscillator
  • the V C O used in integrated circuits includes mano reciprocating vibrators, ring oscillators, and LC oscillator type oscillators.
  • As an LC oscillation type oscillator one having a variable capacitance diode whose capacitance changes depending on the magnitude of an applied voltage is widely known (for example, Patent Documents 1 to 4).
  • Patent Document 1 Japanese Patent Laid-Open No. 2 0 0 5 — 3 2 3 0 1 6
  • Patent Document 2 Japanese Laid-Open Patent Publication No. 2 0 3 — 7 8 3 4 8
  • Patent Document 3 Japanese Patent Laid-Open No. 2 0 0 2 — 1 5 8 5 3 9
  • Patent Document 4 Japanese Patent Laid-Open No. 11 1 9 7 9 2 8
  • the LC oscillator type oscillator has the advantage that the jitter is smaller than that of a mano retino vibrator or ring oscillator. For this reason, LC oscillation type oscillators using variable capacitance diodes K are often used in wireless communication devices that require precision in the oscillation frequency. However, since the LC oscillator type oscillator requires an inductor, it is difficult to integrate it into IC.
  • a constant current source Iss is used to make the oscillation frequency variable.
  • the constant current source ss tends to generate a large current noise. For this reason, relaxation oscillators have not been used in high frequency circuits. Disclosure of the invention
  • the present invention has been made in view of such circumstances, and provides a voltage-controlled oscillator that can be easily integrated into an IC and that can reduce the generation of noise. Objective.
  • a plurality of resistors a positive feedback circuit including a pair of transistors for oscillated oscillation, a variable capacitance circuit or a variable resistance circuit, And a bias circuit that applies a fixed bias voltage to the variable capacitance circuit or variable resistance circuit, and control the oscillation frequency by varying the capacitance value of the variable capacitance circuit or the resistance value of the variable resistance circuit according to the control voltage. I try to do it.
  • the oscillation operation is realized by the oscillation circuit using a resistor instead of the inductor, so that the voltage control oscillation circuit can be easily integrated into I c.
  • a fixed current is made to flow by using a bias circuit constituted by a transistor or a resistor, and instead, the oscillation frequency is controlled by the capacitance value of the variable capacitance circuit or the variable resistance circuit. Since it is realized by making the resistance value variable, it is not necessary to use a constant current source, and the generation of noise can be suppressed.
  • FIG. 2 is a diagram showing another configuration example of the voltage controlled oscillator according to the present embodiment.
  • FIG. 4 is a diagram showing another configuration example of the voltage controlled oscillator according to the present embodiment.
  • FIG. 5 is a diagram showing a waveform of a signal output from the voltage controlled oscillator according to the present embodiment.
  • FIG. 6 is a diagram showing another configuration example for controlling the oscillation frequency in the present embodiment.
  • FIG. 7 is a diagram showing another configuration example for controlling the oscillation frequency in the present embodiment.
  • FIG. 2 is a diagram illustrating a configuration example of a pressure controlled oscillation circuit according to the present embodiment.
  • Figure 2 is a diagram illustrating a configuration example of a pressure controlled oscillation circuit according to the present embodiment.
  • Each end of a pair of resistors R 1 and R 2 is connected to the power supply V DD.
  • a positive feedback circuit made up of pair transistors M 1 and M 2 for oscillating cros- capping.
  • the sources of the pair transistors M 1 and M 2 are connected to the resistors R 1 and R 2, respectively, and the drains of the pair transistors M l and M 2 are connected to a pair of variable capacitance diodes D 1 and D 2. Each is connected to each node. These force diodes of the variable capacitance diodes D 1 and D 2 are connected in common. Then, the control voltage (tuning voltage) V T is imprinted on the common connection point of the force cords. Added.
  • a bias circuit for applying a fixed bias voltage to the variable capacitance diodes D 1 and D 2 is connected to each of the anodes of the variable capacitance diodes D 1 and D 2.
  • This bias circuit is composed of a pair of transistors M 4 and M 5 that are mirror-connected to the transistor M 3.
  • the source of transistor M3 is connected to the power supply, and the drain is connected to ground. As a result, a constant current always flows through the transistors M 4 and M 5.
  • the voltage-controlled oscillator configured as described above oscillates by charging and discharging the variable capacitance diodes D1 and D2 by switching the pair transistors M1 and M2 at high speed.
  • a sawtooth wave having a desired frequency as shown in FIG. 5 is output from each of the output terminals Q and Q bar of the voltage controlled oscillator.
  • the variable capacitance diode D l, between this for varying the capacitance value tuning voltage V T of the D 2 are in earthenware pots by controlling the desired oscillation frequency.
  • transistors M 4 and M 5 are used as an example of the bias circuit, but the invention is not limited to this.
  • the bias circuit may be composed of resistors R 3 and R 4. Compared with the transistors M 4 and M 5, the resistors R 3 and R 4 are more effective in suppressing the generation of current noise.
  • n MO S transistors are used as the pair transistors M l and M 2
  • p MO S transistors may be used.
  • the pair transistors M l and M 2 are changed to pMOS transistors in the circuit of FIG. 3, the configuration is as shown in FIG.
  • each of the pair of resistors R 1 and R 2 is connected to the power supply VDD. One end is connected.
  • a pair of variable capacitance diodes D 1 and D 2 are connected to the other ends of the resistors R 1 and R 2, respectively. Each of these variable capacitance diodes D 1 and D 2 is connected in common.
  • a control voltage (tuning voltage) V T is applied to the common node of the anodes.
  • a positive feedback circuit is connected to each of the force diodes of the variable capacitance diodes D l and D 2 by means of pair transistors M l and M 2 for oscillating without cross coupling.
  • the sources of the pair transistors M l and M 2 are respectively connected to the force capacitors of the variable capacitance diodes D l and D 2
  • the drains of the pair transistors M l and M 2 are resistors R 3 , R 4 is connected to each end. The other ends of the resistors R 3 and R 4 are connected to the ground.
  • a bias circuit (transistor M 4) that provides a fixed bias voltage without using the constant current source used in the relaxation oscillator, by improving the RC oscillation type relaxation oscillator. , M5 or resistors R3, R4), a fixed current always flows.
  • the variable capacitance diodes D 1 and D 2 are used, and the oscillation frequency is controlled by changing the capacitance values of the variable capacitance diodes D 1 and D 2. I have to.
  • it is not necessary to use an inductor and the integration of the voltage-controlled oscillation circuit into IC can be facilitated. Further, there is no need to use a constant current source, and noise generation can be suppressed.
  • variable capacitance diodes D 1 and D 2 are used as an example of the variable capacitance circuit, and the capacitance values of the variable capacitance diodes D 1 and D 2 are changed by the tuning voltage V T.
  • the oscillation frequency is controlled by the above has been described, but the present invention is not limited to this.
  • voltage controlled oscillation A plurality of capacitors C 1, C 2, ⁇ , C n with different capacitance values are connected in parallel between the output terminals Q and Q of the capacitor and each capacitor C l, C 2, ⁇ ⁇ ⁇ ⁇ Switches C 1 and S 2 are connected in series to C n. Then, by selectively turning on any of the switches SI, S 2,..., Sn, the capacitance value may be made variable to control the oscillation frequency.
  • the combined capacitance value of one or more capacitors can be made variable by connecting a plurality of capacitors and a plurality of switches in a ladder manner and selecting one of the switches. May be.
  • the capacitance values of the plurality of capacitors may be different or the same.
  • a capacitor C and a MOS transistor T r are connected in series between the output terminals Q and Q of the voltage controlled oscillator, and the MOS transistor T r is connected to the triode region.
  • This is used as a variable resistance element equivalently. Then, the resistance value r can be made variable by changing the gate voltage of the MO S transistor T r within the range of the triode region, and the oscillation frequency can be controlled by this. ..
  • the present invention is useful for a voltage-controlled oscillator that controls the oscillation frequency.
  • the voltage controlled oscillator of the present invention can be applied to a wireless communication device and other electronic devices. If the voltage controlled oscillator of the present invention is only a low frequency circuit, It can also be applied to high-frequency circuits

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

Cette invention porte sur un circuit d'oscillation à réglage de tension qui comprend : des résistances (R, R2) ; une paire de transistors (M1, M2) de circuit d'oscillation à rétroaction positive ; des diodes à capacité variable (D1, D2) ; et des circuits de polarisation (M4, M5) donnant une tension de polarisation fixe aux diodes à capacité variable (D1, D2). Par le changement de la valeur de capacité des diodes à capacité variable (D1, D2) par une tension synchrone VT de façon à commander la fréquence d'oscillation, il est possible de configurer un oscillateur à réglage de tension sans utiliser un inducteur non approprié pour un CI ni une source de courant constant qui a tendance à provoquer un bruit de courant important.
PCT/JP2007/069895 2006-10-18 2007-10-04 Circuit d'oscillation à réglage de tension WO2008047692A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006283630A JP2008103888A (ja) 2006-10-18 2006-10-18 電圧制御発振回路
JP2006-283630 2006-10-18

Publications (1)

Publication Number Publication Date
WO2008047692A1 true WO2008047692A1 (fr) 2008-04-24

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JP (1) JP2008103888A (fr)
WO (1) WO2008047692A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104242821B (zh) * 2013-06-11 2018-06-12 精工爱普生株式会社 可变电容电路、振荡电路、振动器件及其制造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114026787A (zh) * 2019-07-05 2022-02-08 株式会社半导体能源研究所 半导体装置、蓄电装置以及半导体装置的工作方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148203A (ja) * 1984-01-13 1985-08-05 Matsushita Electric Ind Co Ltd 入力切換器付電圧制御発振器
JPS61253919A (ja) * 1985-05-04 1986-11-11 Hitachi Ltd Cr積ばらつき自己補正装置
JPH06196974A (ja) * 1992-12-24 1994-07-15 Sumitomo Electric Ind Ltd 発振回路および発振周波数調整方法
JPH0656743U (ja) * 1993-01-13 1994-08-05 日本電子機器株式会社 燃焼圧検出装置
JPH07288468A (ja) * 1994-04-14 1995-10-31 Unitec Denshi Kk フィードフォワード制御型位相同期回路
JP2006012199A (ja) * 2004-06-21 2006-01-12 Yuki Nagaoka レーザー駆動装置、光学式ヘッド、および光ディスクドライブ装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148203A (ja) * 1984-01-13 1985-08-05 Matsushita Electric Ind Co Ltd 入力切換器付電圧制御発振器
JPS61253919A (ja) * 1985-05-04 1986-11-11 Hitachi Ltd Cr積ばらつき自己補正装置
JPH06196974A (ja) * 1992-12-24 1994-07-15 Sumitomo Electric Ind Ltd 発振回路および発振周波数調整方法
JPH0656743U (ja) * 1993-01-13 1994-08-05 日本電子機器株式会社 燃焼圧検出装置
JPH07288468A (ja) * 1994-04-14 1995-10-31 Unitec Denshi Kk フィードフォワード制御型位相同期回路
JP2006012199A (ja) * 2004-06-21 2006-01-12 Yuki Nagaoka レーザー駆動装置、光学式ヘッド、および光ディスクドライブ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104242821B (zh) * 2013-06-11 2018-06-12 精工爱普生株式会社 可变电容电路、振荡电路、振动器件及其制造方法

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