WO2008044571A1

WO2008044571A1 - Method for analyzing fluidity of resin material including particles and fluidity analysis system

Info

Publication number: WO2008044571A1
Application number: PCT/JP2007/069361
Authority: WO
Inventors: Tsutomu Kono; Kouji Kobayashi; Kazuyoshi Kojima; Masayuki Mino
Original assignee: Hitachi Chemical Company, Ltd.
Priority date: 2006-10-06
Filing date: 2007-10-03
Publication date: 2008-04-17
Also published as: KR20090064428A; JPWO2008044571A1; TWI343992B; CN101523394A; TW200834364A

Abstract

A technique of analyzing fluid behavior of a resin material including deformation of particles. A fluidity analysis method is characterized by establishing a calculating method in which the results of experiments on the deformation of and load on the particles are received as inputted values, the flow process of a resin material is predicted by a fluid analysis technique, and the flow and particle deformation of the resin material are predicted. Specifically, at a time step, the deformation of particles is determined from the interval between electrodes determined by fluid analysis, the load determined by subtracting the load corresponding to the deformation of the particles from the load to move the electrodes is used as the load to move the electrode at the next time step. With this, the process of flowing of a resin material while particles are deforming is predicted by fluid analysis.

Description

Specification

Technical field of flow analysis method and flow analysis system for resin material containing particles

[0001] The present invention relates to a flow analysis method and a flow analysis system of a resin material in which particles are contained, and particularly to connect a semiconductor integrated circuit (IC) used in a device, a liquid crystal, or the like to a substrate. The present invention relates to a three-dimensional flow analysis method for evaluating conductivity from the number of particles between electrodes and the amount of deformation of the particles by flowing a resin material containing conductive particles between the electrodes.

Background art

[0002] Patent Literature 1 and Patent Literature 2 describe analysis programs capable of analyzing foaming behavior in which the density of a polyurethane foam material decreases with time as a flow analysis method of a thermosetting material.

In Patent Document 1, the entire foamed material is considered to have a uniform density, and the density is calculated as the elapsed time since the first nozzle of the foamed material that exits the nozzle that delivers the foamed material with the foaming material stirred. Density is used. Patent Document 2 describes that in addition to the technique of Patent Document 1, foam flow analysis of a foam material is performed using a function that takes into account that the density of the foam material changes due to fluctuations in thickness.

[0003] Further, there is an example of a report by R. Dudek et al. In Non-Patent Document 1 as a method for compressing a resin material in which particles are contained between electrodes and calculating particle deformation. This is based on the structure analysis (software: ABAQ US) and the electrode, particle and resin material shapes, particle and resin physical properties (Young's modulus, Poisson's ratio, linear expansion coefficient) are input between heated electrodes. This is a calculation method for compressing particles and resin.

Patent Document 1: Japanese Patent Laid-Open No. 2001-318909

Patent Document 2: Japanese Patent Laid-Open No. 2003-91561

Non-special literature: Characterization ana Thermo-Mechanical Response or An isotropic Conductive Films 1998 IEEE, (R. Dudek, A. Schubert, S. Meinel,

B. Michel (Fraunhofer Institute for Reliability and Microintegration (IZM) Berlin)) Disclosure of the invention

Problems to be solved by the invention

[0004] When performing analysis in which particles deform between electrodes while resin material flows, it is necessary to predict flow of resin material using fluid analysis and also predict deformation of particles using structural analysis There is. The above prior art is a method for predicting particle deformation using structural analysis, but it takes into account the flow state of resin material and particles, the number of particles sandwiched between electrodes, viscosity change of resin material, exothermic reaction, etc. There is a problem that can not be.

[0005] As described above, the structural analysis cannot accurately predict the flow process of a resin material that changes in viscosity with an exothermic reaction. On the other hand, in the current fluid analysis, the plastic deformation between the electrodes of the particles cannot be accurately calculated while the resin material flows.

[0006] Therefore, an object of the present invention is to calculate the flow behavior of a resin material and particles by compression between electrodes, and to obtain the number of particles sandwiched between the electrodes. In addition, considering the characteristics of the increase in resin viscosity, the load and displacement characteristics of the particles, and the number of particles sandwiched between the electrodes, the amount of deformation of the particles is predicted based on the load or speed conditions applied to the electrodes in order to move the electrodes. I will make it a mess.

[0007] Another object of the present invention is to predict the conductivity between electrodes from the deformation amount of the particles and the number of particles sandwiched between the electrodes.

Means for solving the problem

[0008] In order to achieve the above object, the present invention predicts the flow process of an embryo material by a fluid analysis technique using at least the viscosity condition of the resin material, the experimental result of the deformation amount of the particle and the load as input values. It is characterized by realizing a calculation method for predicting the flow and particle deformation of resin materials. Specifically, it is possible to predict the number of particles sandwiched between electrodes by predicting the flow process of resin material and particles in consideration of viscosity changes.

[0009] In addition, at a certain time step of the fluid analysis, the amount of deformation of the particle is obtained from the distance between the electrodes obtained by the fluid analysis, and the particle is calculated from the load applied from the outside in order to move the electrode. By using the load obtained by subtracting the load corresponding to the deformation amount of the particle as the load for moving the electrode at the next time step, the deformation amount of the particles to be obtained in the structural analysis is calculated by the fluid analysis, and the structure Resin material while particles are deformed only by fluid analysis without using analysis It is possible to predict the process of flow of fee.

Furthermore, by inputting the relationship between the amount of deformation of the particles and the conductivity, the conductivity between the electrodes can be predicted from the maximum value of the amount of deformation of the particles and the number of particles sandwiched between the substrates.

The invention's effect

[0011] As described above, the analysis technique of the present invention can predict the number of particles sandwiched between the electrodes of the chip and the substrate and the amount of deformation of the particles. Optimum for analysis of factors that interact with each other in a complex manner such as initial shape such as resin material thickness, particle and electrode shape, physical properties such as particle elasticity, and molding process conditions such as load applied to the electrode Can be achieved.

[0012] Note that it is not practical to conduct an experimental study in order to optimize these factors because the cost increases and the development period becomes longer.

Brief Description of Drawings

FIG. 1 is a schematic diagram showing a semiconductor integrated circuit (IC) and a substrate molding process using a resin material containing conductive particles to be analyzed.

[FIG. 2] FIG. 2 is a hardware configuration diagram for performing flow analysis.

FIG. 3 is a flowchart of a calculation in which the movement of the semiconductor integrated circuit (IC) 3 and the electrode according to the first embodiment of the present invention is pressure controlled.

[FIG. 4] FIG. 4 is a flowchart of a calculation in which the movement of the semiconductor integrated circuit (IC) 3 and the electrode according to the second embodiment of the present invention is pressure controlled from the speed.

[FIG. 5] FIG. 5 is an analysis example (single layer resin) of the electrode pressure control of Example 1 or 2 of the present invention.

[Fig. 6] Fig. 6 is an analysis example (double-layer resin) of pressure control of the electrode of Example 1 or 2 of the present invention.

[FIG. 7] FIG. 7 is a flowchart of an analysis for predicting the conductivity of Example 3 of the present invention (calculation in which the movement of the semiconductor integrated circuit (IC) 3 and the electrode is pressure control).

[FIG. 8] FIG. 8 is a flowchart of an analysis for predicting the conductivity of Example 4 of the present invention (calculation in which the movement of the semiconductor integrated circuit (IC) 3 and the electrode is controlled by pressure from the speed).

[Fig. 9] Fig. 9 shows the relationship of the input "deformation amount when a load is applied per particle 1". FIG.

Fig. 10 is a graph showing the relationship between the input "deformation amount per arbitrary number of particles and the conductivity between the electrode of the semiconductor integrated circuit (IC) and the electrode of the substrate".

11] A schematic diagram showing a molding process of a semiconductor integrated circuit (IC) and a substrate using a resin material containing conductive particles to be analyzed.

12] It is a hardware configuration diagram that performs flow analysis.

FIG. 13 is a flowchart of a calculation in which movement of the semiconductor integrated circuit (IC) 3 and the electrodes according to the fifth embodiment of the present invention is pressure control.

FIG. 14 is a flowchart of a calculation in which the movement of the semiconductor integrated circuit (IC) 3 and the electrodes according to the sixth embodiment of the present invention is pressure control from the speed.

15] This is an analysis example (single layer resin) of the electrode pressure control in Example 5 or 6 of the present invention. 16] This is an analysis example (two-layer resin) of pressure control of the electrode of Example 5 or 6 of the present invention. 17] This is a flowchart of the analysis for predicting the conductivity of Example 7 of the present invention (calculation in which the movement of the semiconductor integrated circuit (IC) 3 and the electrode is pressure control).

18] It is a diagram showing the relationship of the input “deformation amount when a load is applied to each particle 1 in consideration of temperature”.

19] It is a diagram showing the relationship between the “deformation amount per arbitrary number of particles and the conductivity between the electrode of the semiconductor integrated circuit (IC) and the electrode of the substrate”.

20] This is the result of the structural analysis using the coordinates of particle 1 at the connection part sandwiched between electrodes 4 and the moving speed of electrode 4 as input conditions.

FIG. 21 is a view showing the relationship between “particle contact area and conductivity between an electrode of a semiconductor integrated circuit (IC) and an electrode of a substrate”.

Explanation of symbols

1 particle

2 Resin material

3 Semiconductor integrated circuit (IC) 7 Computing device

8 LAN

9 Display device

10 Recording device

11 Second layer resin material

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments according to the present invention will be described with reference to the accompanying drawings.

Example 1

[0016] [Controlling pressure of moving electrode]

First, the molding process to be analyzed will be described with reference to FIG. In the initial state (1-a), the resin material 2 containing the conductive particles 1 is placed between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5. In the molding process, the semiconductor integrated circuit (IC) 3 to which heat is applied is moved in the direction of the substrate 5 and the resin material 2 containing the particles 1 is compressed, whereby the resin material 2 containing the particles 1 flows.

[0017] At this time, the temperature of the resin material 2 changes due to the contact between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the resin material 2, and the viscosity of the resin material 2 changes along with the temperature change. It flows while being compressed. When the distance between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5 becomes smaller than the diameter of the particle 1, the particle 1 sandwiched between the electrodes 4 is compressed while being deformed.

[0018] When the movement of the semiconductor integrated circuit (IC) 3 is completed (1b), the electric conductivity between the semiconductor integrated circuit (IC) 3 and the substrate 5 is caused by the conductivity of the particles 1 sandwiched between the electrodes 4. It is possible to convey a signal. Here, the contact area between the particle 1 and the electrode 4 is determined by the deformation amount of the particle 1, and the conductivity between the semiconductor integrated circuit (IC) 3 and the substrate 5 is determined by this contact area. The conductivity is evaluated by the current that flows when a constant voltage is applied between the electrodes 4. Here, the deformation amount of the particle 1 is the ability of the device to apply a load from the upper part of the semiconductor integrated circuit (IC) 3, the deformation amount of the particle 1 when the load is applied, the number of particles 1 sandwiched between the electrodes, It depends on the viscosity change of resin material 2. [0019] [Configuration of angle analysis system]

Next, an analysis system used to predict the flow process of the resin material 2 accompanying the deformation of the particle 1 will be described. The analysis system functions by executing software having the hardware configuration shown in FIG. 2 and having the flows of FIGS. 3, 4, 7, and 8 described later.

[0020] Specifically, it includes a computing device 7, a computing device 7 provided with a recording device 10 (hard disk, MO, etc.), a LAN 8 connecting these two computing devices, and a display device 9 provided in the computing device 7. . The CAD data created by the calculation device 6 may be transferred to the calculation device 7 via the LAN 8. The CAD data transferred to the computing device 7 can be recorded on the recording device 10 (node, disk, MO, etc.) of the computing device 7 for use. The calculation device 7 executes the calculation according to the flowcharts shown in FIGS. 3, 4, 7, and 8, records the result in the recording device 10, and then displays the result on the display device 9. Although not shown, the calculation devices 6 and 7 are naturally provided with input devices such as a keyboard and a mouse.

[0021] [Flowchart]

Next, the processing of the analysis program will be described along the flowchart of FIG. First, in the model shape creation step 1001, the analysis target model specified by the operator through the input device, that is, the electrode to be analyzed, the shape of the resin material including the initial particles, and the resin material including the particles can flow. Read space data from storage device 10.

Next, in step 1002 for creating a 3D solid element, the shape of the data read in the model shape creating step 1001 is decomposed into a plurality of specific spaces (finite elements of a 3D solid), and the shape data of each finite element Create

[0023] Next, in the physical property value input step 1003, the density, thermal conductivity, specific heat, exothermic equation (Equation 7) to (Equation 11), viscosity equation (Equation 12) to (Equation 15), the arrangement, density, diameter of particle 1 and the amount of deformation when a load is applied to each particle 1 are displayed to prompt the operator, and these are displayed from the input device. Accept data. A: reaction rate, t: time, T: temperature, dA / dt: reaction rate, XI, X2: coefficient as a function of temperature, N, M, Xa, Ea, Xb, Eb: material specific coefficients, Q: Calorific value up to an arbitrary time, Qo: Total calorific value until the end of reaction, dQ / dt: Heat generation rate, No: Viscosity, No 0: Initial viscosity, t: Time, tO: Gelation time, T: Temperature , A, b, d, e, f, g: Constants specific to the material. dA / dt = (K, + K ₂ A ^M ) {lA) ^N (7)

[Number 8

_{Γ Γ} Κ _α exp (-^ IT) (8)

[Number 9

K ₂ = K _b exp (-^ IT) (9)

[Equation 10]

[Equation 11]

[Equation 12]

η = η ₀ (t + t ₀ / t -t ₀ ) ^c m (12)

C (T) = f / T-g

[0024] Next, in the boundary condition and molding condition input step 1004, a display prompting the operator to input the pressure applied to the top of the semiconductor integrated circuit (IC) 3 and the electrode 4 is performed. Force data is accepted. Here, the pressure applied to the top of the semiconductor integrated circuit (IC) 3 and the electrode 4 and the area of the top of the semiconductor integrated circuit (IC) 3 are applied to the top of the semiconductor integrated circuit (IC) 3 and the electrode 4. Calculate the load F.

Next, an analysis start instruction from the operator and an initial time increment are received. The analysis increases the minute time and calculates the change at each time step, and the time increment indicates the time step interval.

[0026] In step 1005, based on this instruction, continuous equations (1), Naviest status equations (2) to (4), and energy conservation equation (5) stored in the recording device are called. Initial time increment, pressure applied on top of semiconductor integrated circuit (IC) 3 and electrode 4, density of resin material, specific heat, thermal conductivity, exothermic equation (Equation 7) to (Equation 11) Substituting the viscosity equations (Equation 12) to (Equation 15), calculate the velocity, pressure, temperature and viscosity associated with the flow of the resin material 2 and particles 1 due to the compression of the electrode. This calculation result is stored in the storage device in association with the position of the finite element.

[0027] where, P: density, u: velocity in the X direction, U: velocity in the y direction, c: velocity in the _Z direction, T: temperature, P: pressure, t; time, no; viscosity, Cp: specific heat at constant pressure, 13 ; Volume expansion coefficient, input; thermal conductivity.

[Number 1]

[Equation 5]

[0028] Next, in step 1006, it is determined whether or not the distance between the electrodes 4 is larger than the diameter of the particles. Here, when the distance between the electrodes 4 becomes equal to the diameter (φD) of the particles 1, in step 1007, the number 1 of particles 1 at the connection portion sandwiched between the electrodes 4 is output.

[0029] From the next step 1008, the flow process of the resin material 2 accompanied by the deformation of the particles 1 is calculated. In the first step (1008) for calculating the flow process of the resin material 2 accompanied by the deformation of the particle 1, the deformation of the particle 1 is ignored and the amount of movement of the resin material 2 in the moving direction of the electrode 4 (= grain Deformation amount of child 1) After calculating ΔΗ1, the load applied per particle 1 by the deformation amount ΔΗ1 of particle 1 from the input “deformation amount when load is applied per particle 1” △ Calculate F1. Here, Fig. 9 shows an example of the relationship of the input "deformation amount when a load is applied per particle 1".

[0030] In the next second step (1009), the load FJ2 applied to the tops of the semiconductor integrated circuit (IC) 3 and the electrode 4 is equal to the set value F force per particle 1 obtained in step 1008. The difference between the value obtained by the product of the additional load AF1 and the number of particles N sandwiched between the electrodes obtained in step 1007 (FJ2 = F – NX AF1) is used! (Step 1010). After calculating the movement amount ΔΗ2 of the resin material 2 due to the movement of the electrode 4 when this load F J2 is applied (= deformation amount of particle 1), the load applied per particle by the deformation amount ΔΗ2 of particle 1 AF 2. Calculate FJ3 = F—NX AF2 as the load condition applied to the semiconductor integrated circuit (IC) 3 in the next time step calculation.

[0031] In step 1011, the calculation in steps 1008 to 1010 is repeated, and in the Mth step, the deformation amount ΔΗ (Μ) of particle 1 and the load AF (M) applied to each particle are calculated. The product of the load AF (M) applied per particle 1 from the load setting value F applied to the top of the semiconductor integrated circuit (IC) 3 and electrode 4 and the number N of particles sandwiched between the electrodes determined in step 1007 Until the value obtained in (1) falls below 0 (F—NXAF (M) ≤0), or the load F applied to the electrode becomes incapable of moving due to the increase in the viscosity of the resin material (gel viscosity), or The deformation amount of the particles 1 and the flow behavior of the resin material 2 are calculated until the distance between the electrodes 4 becomes 0 (step 1012).

[0032] In step 1013, calculation convergence determination is performed. The zero convergence determination method compares the pressure with a predetermined pressure range, and determines that the pressure is within the range as convergence. If it does not converge, return to steps 1001 to 1004; At this time, prompt the operator for input and decide which step to return to.

[0033] In step 1014, the appropriateness of particle deformation is determined. Here, the force in which the deformation amount of the particle is within the specified value range is determined, and if it is outside the specified range, the process returns to any one of steps 1001 to 1004. At this time, the operator is prompted to input, and which step force to return to is determined. In step 1013, it is determined that the calculation has converged. After determining that the deformation is appropriate, the calculation ends in step 1015.

[0034] It should be noted that as an input condition in Step 1003, an example of the relationship between deformation amounts when a load is applied per particle 1 is shown. When a load per particle 1 is applied It is assumed that the relationship between the deformation amount and the deformation rate can be input, and the relationship between the stress applied to the particle 1 and the deformation amount and the deformation rate can be input. In addition, the exothermic equation is not limited to (Equation 7) to (Equation 11), and an arbitrary function including the reaction rate of the resin material 2 is used.

[0035] The viscosity equation is not limited to (Equation 12) to (Equation 15), and an arbitrary function including the temperature or reaction rate of the embryo material 2 can be used. In addition, it is possible to use any judgment method for convergence judgment. It is also assumed that two-dimensional analysis is possible in addition to three-dimensional analysis. The above calculations can be performed using the finite element method, finite volume method, or finite difference method.

Example 2

[0036] [Switching from electrode speed to pressure control]

Next, processing of the analysis program will be described along the flowchart of FIG. First, in the model shape creation step 2001, the analysis target model specified by the operator via the input device, that is, the electrode to be analyzed, the shape of the resin material including the initial particles, and the resin material including the particles can flow. Read space data from storage device 10.

[0037] Next, in step 2002 of creating the 3D solid element, the shape of the data read in the model shape creating step 2001 is decomposed into a plurality of specific spaces (finite elements of the 3D solid), and the shape data of each finite element Create

[0038] Next, in physical property value input step 2003, density, thermal conductivity, specific heat, exothermic equation (Equation 7) to (Equation 11), viscosity equation (Equation 12) to (Equation 15), the arrangement, density, diameter of particle 1 and the amount of deformation when a load is applied to each particle 1 are displayed to prompt the operator, and these are displayed from the input device. Accept data.

[0039] Next, in the boundary condition and molding condition input step 2004, the moving speed Vd of the semiconductor integrated circuit (IC) 3 and the electrode 4 and the maximum pressure applied to the upper part of the semiconductor integrated circuit (IC) 3 and the electrode 4 are set. A display prompting the operator to enter and input device Force also accepts data.

Here, from the received maximum pressure applied to the top of the semiconductor integrated circuit (IC) 3 and the electrode 4 and the area of the top of the semiconductor integrated circuit (IC) 3, the semiconductor integrated circuit (IC) 3 and the electrode 4 Calculate the maximum load Fmax that can be applied to the top of.

Next, an analysis start instruction and an initial time increment from the operator are received. In Step 20 05, based on this instruction, the continuous equation (1), Naviest status equation (2) to (4), and energy conservation equation (5) stored in the recording device are called and entered so far. Initial time increment, pressure applied on top of semiconductor integrated circuit (IC) 3 and electrode 4, density of embryo material, specific heat, thermal conductivity, exothermic equation (Equation 7) to (Equation 11), viscosity Substituting the equations (Equation 12) to (Equation 15), calculate the velocity, pressure, temperature and viscosity associated with the flow of the embryo material 2 and particles 1 due to electrode compression. This calculation result is stored in the storage device in association with the position of the finite element.

[0042] Next, in step 2006, it is determined whether the distance between the electrodes 4 is larger than the diameter of the particles! Here, when the distance between the electrodes 4 is equal to the diameter (φD) of the particles 1, in step 2007, the number N of particles 1 at the connecting portion sandwiched between the electrodes 4 is output.

[0043] From the next step 2008, the flow process of the resin material 2 accompanied by the deformation of the particles 1 is calculated. In step 2008, after calculating the amount of movement of resin material 2 in the moving direction of electrode 4 (= deformation amount of particle 1) ΔΗ, particle 1 is calculated from the deformation amount when a load is applied per particle 1 input. The load AF applied to each particle 1 is calculated from the amount of deformation ΔΗ, and the load FR = NX AF applied to the particle 1 is calculated. Furthermore, the load FJ applied to the resin is calculated as the product of “the contact area between the moving electrode 4 and the resin material 2” and “the pressure of the resin embryo 2 at the contact portion”.

Here, FIG. 9 shows an example of the input “deformation amount when a load is applied per particle 1”. Here, in step 2009, the maximum load Fmax force S applied to the tops of the semiconductor integrated circuit (IC) 3 and the electrode 4 is greater than the sum of the load FJ applied to the embryo material 2 and the load FR applied to the particles. (Fmax≥FJl + FRl).

[0045] Here, when Fmax is greater than FJ1 + FR1, even if the maximum load Fmax is applied, the set moving speed Vd of the electrode 4 cannot be realized. Therefore, the method for controlling the movement of electrode 4 Therefore, the control is switched to the control when the maximum load Fmax is exceeded in the control of the speed Vd. That is, the calculation in steps 1008 to 1011 shown in FIG. 3 is performed to calculate the deformation process of the particles 1 and the flow process of the resin material 2.

Here, the load AF (M) applied per particle 1 from the load set value F applied to the upper part of the semiconductor integrated circuit (IC) 3 and the electrode 4 is sandwiched between the electrode obtained in Step 1007 When the value obtained by the product of the number of particles N is less than 0 (F—NX AF (M) ≤0) or the load F applied to the electrode is increased by the increase in the viscosity of the resin material (gel viscosity) Calculate the amount of deformation of particle 1 and the flow behavior of resin material 2 until the electrodes cannot move or until the distance between the electrodes 4 becomes zero.

[0047] In step 2009, if Fmax≥FJl + FRl, the load F applied to the electrode is increased until the electrode cannot move due to the increase in the viscosity of the resin material (gel viscosity), or the electrode 4 Repeat the calculation in step 2008 and the judgment in step 2009 until the interval between them becomes zero.

Here, at step 2012, calculation convergence is determined. Convergence is determined by comparing the pressure with the force, and the pressure range that has been defined in advance, and determining that it is within the range as convergence. If it does not converge, return to step 200; At this time, prompt the operator for input and decide which step to return to.

[0049] In step 2013, the appropriateness of particle deformation is determined. Here, the force with which the deformation amount of the particle is within the specified value range is determined, and if it is outside the specified range, the process returns to any one of Step 200;! -2004. At this time, prompt the operator for input and decide which step to return to.

[0050] After determining that the calculation has converged in step 2012 and determining that the particle deformation is appropriate in step 2013, the calculation ends in step 2014.

[0051] It should be noted that as an input condition in step 2003, an example of the relationship of the deformation amount when a load is applied per particle 1 is shown. When a load per particle 1 is applied It is assumed that the relationship between the deformation amount and the deformation rate can be input, and the relationship between the stress applied to the particle 1 and the deformation amount and the deformation rate can be input.

[0052] The exothermic formula is not limited to (Formula 7) to (Formula 11). Any function can be used. The viscosity equation is not limited to (Equation 12) to (Equation 15), and any function including the temperature or reaction rate of the resin material 2 can be used.

[0053] In addition, any determination method can be used for the convergence determination. It is also possible to perform 2D analysis in addition to 3D analysis. The above calculation can be performed using the finite element method, the finite volume method, or the finite difference method.

[0054] [Analysis example of electrode pressure control (single layer resin)]

Here, Fig. 5 shows an example of analysis (two-dimensional analysis). In an initial state, a resin material 2 containing conductive particles 1 is placed between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5. Here, the embryo material 2 is assumed to have an initial temperature of 30 ° C, and the exothermic equations (Equation 7) to (Equation 11) and the viscosity equations (Equation 12) to (Equation 15) are used. In addition, constant values, density, thermal conductivity, specific heat values, particle diameter (φϋ), density of exothermic equations (Equation 7) to (Equation 11), viscosity equations (Equation 12) to (Equation 15) Is shown in Table 1.

[table 1]

Constant of the degree formula

Other physical properties

[0055] Further, the temperature of the semiconductor integrated circuit (IC) 3 is set to be constant (185 ° C), moved by applying a pressure of 5 MPa in the direction of the substrate 5, and the resin material 2 including the particles 1 is compressed. This causes the embryo material 2 containing the particles 1 to flow. At this time, the temperature of the resin material 2 changes due to the contact between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the resin material 2, and the resin material 2 is compressed together with the particles 1 while causing a viscosity change accompanying the temperature change. Calculate the flow process.

[0056] When the distance between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5 becomes smaller than the diameter of the particle 1, the calculation of the contact between the particle 1 and the electrode 4 is made in the analysis. Do not do. In other words, in the analysis, when the particles 1 are in contact with each other, and when the particles 1 and the electrode 4 are in contact with each other, the fluidity of only the resin material 2 is calculated by setting such that the particles 1 pass through the electrode 4. This In this case, the pressure applied from the upper part of the semiconductor integrated circuit (IC) 3 is not the set value of 5 MPa.As shown in the flowchart of Fig. 3, the deformation obtained by the product of the set pressure and the area is changed to the deformation amount of particle Use the value minus the corresponding load.

As a result of this calculation, the resin viscosity increases, and even if a load is applied, the semiconductor integrated circuit (IC) 3 and the electrode 4 cannot move, and the analysis ends. At this time, the deformation amount of the particle 1 can be obtained from the distance between the electrodes. The deformation amount AD of the particles can be obtained by (Equation 6).

[Equation 6]

△ D = D— D 1 (6)

[0058] Here, D: the diameter of the particle 1 and D1: the distance between the substrates 4 after the analysis is completed. In the above description, the force S indicates the case where the movement of the electrode 4 is controlled by pressure, and the present invention is not limited to this. As shown in the flowchart of FIG. 4, the movement of the electrode is changed from speed to pressure. It is also possible to control. In addition, although the heat conduction calculation within the particle is not performed here, the heat conduction calculation within the particle can also be performed by inputting the specific heat of the particle, the heat conductivity, the heat transfer coefficient between the resin material and the particle, and the like.

[0059] [Analysis example of electrode pressure control (double-layer resin)]

Here, Fig. 6 shows an example of analysis (two-dimensional analysis) in which the resin material is divided into two layers.

[0060] In an initial state, a resin material having a two-layer structure composed of a resin material 11 including particles 1 and having different physical property values is disposed on the upper part of the resin material 2 including the conductive particles 1. A semiconductor integrated circuit (IC) It is installed between the electrode 4 of 3 and the electrode 4 of the substrate 5. Here, the resin material 2 is assumed to have an initial temperature of 30 ° C., and the exothermic formulas (Formula 7) to (Formula 11) and the viscosity formulas (Formula 12) to (Formula 15) are used. The constant value, density, thermal conductivity, specific heat value, particle diameter (φD), density of the exothermic formula (Formula 7) to (Formula 11), viscosity formula (Formula 12) to (Formula 15) As for the first-layer resin material 2 and particle 1, the values of Table 1 are used, and the values of the second-layer embryo material 11 and particle 1 are shown in Table 2.

[table 1] Viscosity formula constant

Other physical properties

[Table 2]

Material properties of the second layer of resin

Other physical properties

Specific heat freezing g 'K) Density Thermal conductivity

(Kg / rr ^) (W / (m 'Κ))

1000 1.95e3 0.97 particles

Diameter (〃m) Density

(Kg/

2 1.00e3

Here, the temperature of the semiconductor integrated circuit (IC) 3 is set to be constant (185 ° C.), moved by applying a pressure of 5 MPa in the direction of the substrate 5, and the resin materials 2 and 11 are compressed. The resin materials 2 and 11 containing the particles 1 are caused to flow. At this time, due to the contact between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the resin materials 2 and 11, the temperature of the embryo materials 2 and 11 changes, and while the viscosity change accompanying the temperature change occurs, the resin material 2 and 11 Calculate the flow of 11 while being compressed with particle 1

Yes

[0062] When the distance between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5 becomes smaller than the diameter of the particle 1, the calculation of the contact between the particle 1 and the electrode 4 is made in the analysis. Do not do. In other words, in the analysis, if particles 1 are in contact with each other, and particle 1 and electrode 4 are in contact, particle 1 is in contact with electrode 4 By making settings such as slipping through, calculate the fluidity of resin materials 2 and 11 only. At this time, the pressure applied from the upper part of the semiconductor integrated circuit (IC) 3 is not the set value of 5 MPa, but as shown in the flowchart of FIG. 3, the deformation amount of the particle 1 is determined from the load obtained by the product of the set pressure and the area. The value obtained by subtracting the load corresponding to is used.

As a result of this calculation, the viscosity of the embryo increases, and even if a load is applied, the semiconductor integrated circuit (IC) 3 and the electrode 4 cannot move, and the analysis ends. At this time, the deformation amount of the particle 1 can be obtained from the distance between the electrodes. The deformation amount AD of the particle 1 can be obtained by (Equation 6).

[Equation 6]

△ D = D— D 1 (6)

[0064] Here, D: the diameter of the particle 1 and D1: the distance between the substrates 4 after the analysis is completed. In the above description, the force S indicates the case where the movement of the electrode 4 is controlled by pressure, and the present invention is not limited to this. As shown in the flowchart of FIG. 4, the movement of the electrode is changed from speed to pressure. It is also possible to control. In addition, although the heat conduction calculation within the particle is not performed here, the heat conduction calculation within the particle S can be performed by inputting the specific heat of the particle, the heat conductivity, the heat transfer coefficient between the resin material and the particle, and the like. In the above, an example of the analysis in which the particle 1 is included in the resin material 11 of the two-phase day is shown, but the present invention is not limited to this, and the resin material 11 of the two-phase day 11 includes the particle 1. It is assumed that the analysis can be performed in the absence.

Example 3

[0065] [Prediction of conductivity (pressure control for electrode movement)]

FIG. 7 is a flowchart for predicting the conductivity between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5 according to the third embodiment of the present invention. Here, the conductivity between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5 is predicted based on the input of the relationship between the particle deformation and the conductivity obtained in the flowchart of FIG. First, in the model shape creation step 3001, the analysis target model identified by the operator through the input device, that is, the electrode to be analyzed, the shape of the resin material including the initial particles, and the space in which the resin material including the particles can flow Day of Read data from storage device 10.

[0066] Next, in step 3002 for creating a 3D solid element, the shape of the data read in model shape creating step 1001 is decomposed into a plurality of specific spaces (finite elements of a 3D solid).

Create shape data for each finite element.

[0067] Next, in the physical property value input step 3003, density, thermal conductivity, specific heat, exothermic equation (Equation 7) to (Equation 11), viscosity equation (Equation 12) to (Equation 15), arrangement of particle 1

The display prompts the operator to input the deformation amount when a load is applied per particle, density, diameter, and particle 1 and receives these data from the input device.

[0068] Next, in the boundary condition and molding condition input step 3004, a display is made to prompt the operator to input the pressure applied to the top of the semiconductor integrated circuit (IC) 3 and the electrode 4, and the input device Force data is accepted. Here, the pressure applied to the top of the semiconductor integrated circuit (IC) 3 and the electrode 4 and the area of the top of the semiconductor integrated circuit (IC) 3 are applied to the top of the semiconductor integrated circuit (IC) 3 and the electrode 4. Calculate the load F.

Next, an analysis opening instruction and an initial time increment from the operator are accepted. In step 30 05, based on this instruction, the continuous equation (1), Naviest status equation (2) to (4), and energy conservation equation (5) stored in the recording device are called and entered so far. Initial time increment, pressure applied on top of semiconductor integrated circuit (IC) 3 and electrode 4, density of embryo material, specific heat, thermal conductivity, exothermic equation (Equation 7) to (Equation 11), viscosity Substituting Equations (Equation 12) to (Equation 15), calculate the velocity, pressure, temperature and viscosity associated with the flow of resin material 2 and particles 1 due to electrode compression. This calculation result is stored in the storage device in association with the position of the finite element.

[0070] Next, in step 3006, it is determined whether or not the distance between the electrodes 4 is larger than the diameter of the particles. Here, when the distance between the electrodes 4 becomes equal to the diameter (φD) of the particles 1, in step 3007, the number 1 of particles 1 at the connection portion sandwiched between the electrodes 4 is output.

Next steps 1008 to 1015 are the calculation method shown in the flowchart of FIG. 3. In step 3008, the deformation amount of the particles is output. In step 3009, the deformation amount per arbitrary number of particles 1 and the conductivity between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5 are input. The conductivity is the current value I when an arbitrary voltage is applied between the electrodes. Where the grain The number N sandwiched between the electrodes 4 of the child 1 is calculated in step 3007, and the deformation amount of the particle 1 is determined in step 3008.

[0072] Here, the input "deformation amount per arbitrary number of particles 1 and electrodes of the semiconductor integrated circuit (IC) 3"

FIG. 10 shows an example of the relationship of “conductivity between electrode 4 of substrate 4 and electrode 4 of substrate 5”. Here, as an arbitrary number of representative values of particle 1, Nl, N2, and N3 are shown. In step 3007, the number of particles 1 in the connection part sandwiched between electrodes 4 is N1, N2, or N3. In the case of, the value can be obtained from the inner and outer cages.

Here, in step 3010, the conductivity per particle is calculated from the deformation amount of particle 1 obtained in step 3008, and the conductivity per particle and the electrode 4 obtained in step 3007 are calculated. The conductivity between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5 is calculated from the number of particles between them.

[0074] Next, in step 3011, calculation convergence is determined. The convergence determination method compares the pressure with a predetermined pressure range, and determines that the pressure is within the range as convergence. If so, return to step 300; At this time, prompt the operator for input and decide which step to return to.

[0075] In step 3012, appropriateness of conductivity is determined. Here, it is determined whether the conductivity is within the specified value range. If the conductivity is out of the specified range, the process returns to step 300; At this time, prompt the operator for input and decide which step to return to.

[0076] In step 3011, it is determined that the calculation has converged. In step 3012, it is determined that the particle deformation is appropriate. In step 3013, the calculation ends. It should be noted that “the deformation amount per arbitrary number of particles 1 and the conductivity between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5” input in step 3009 is “per particle 1 per arbitrary number. The contact area between particle 1 and electrode 4 and the conductivity between electrode 4 of semiconductor integrated circuit (IC) 3 and electrode 4 of substrate 5 obtained from the relationship between the deformation amount of particle and the contact area between particle 1 and electrode 4 In addition, although the conductivity is the current value when an arbitrary voltage is applied between the electrodes, the present invention is not limited to this, and the resistance value between the electrodes is not limited to this. Can be used.

Example 4 [0077] [Prediction of conductivity (speed of electrode movement to pressure control)]

FIG. 8 is a flowchart for predicting the conductivity between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5 according to the fourth embodiment of the present invention. Here, the conductivity between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5 is predicted based on the input of the relationship between the amount of particle deformation and the conductivity obtained in the flowchart of FIG.

[0078] First, in the model shape creation step 4001, the analysis target model identified by the operator via the input device, that is, the electrode to be analyzed, the shape of the resin material including the initial particles, and the embryo material including the particles are obtained. Reads the space data that can flow from the storage device 10.

[0079] Next, in step 4002 of creating the 3D solid element, the shape of the data read in the model shape creating step 4001 is decomposed into a plurality of specific spaces (finite elements of the 3D solid), and the shape data of each finite element is obtained. Create

[0080] Next, in the physical property value input step 4003, density, thermal conductivity, specific heat, exothermic equation (Equation 7) to (Equation 11), viscosity equation (Equation 12) to (Equation 15), particle density, diameter, display a prompt to the operator to input the deformation amount when a load is applied per particle 1 and accept these data from the input device .

[0081] Next, in the boundary condition / molding condition input step 4004, the moving speed Vd of the semiconductor integrated circuit (IC) 3 and the electrode 4 and the maximum pressure applied to the upper part of the semiconductor integrated circuit (IC) 3 and the electrode 4 are set. The display prompts the operator to input, and accepts data from the input device. Here, from the received maximum pressure applied to the upper part of the semiconductor integrated circuit (IC) 3 and the electrode 4 and the area of the upper part of the semiconductor integrated circuit (IC) 3, the upper part of the semiconductor integrated circuit (IC) 3 and the electrode 4 Calculate the maximum load Fmax that can be applied.

Next, an analysis start instruction from the operator and an initial time increment are accepted. Based on this instruction as Step 40 05, the continuous equation (1), Naviest status equations (2) to (4), and energy conservation equation (5) stored in the recording device are called up and input so far. Substituting the initial time increment, the pressure applied to the top of the semiconductor integrated circuit (IC) 3 and the electrode 4, the density of the resin material, the specific heat, the thermal conductivity, the exothermic equation (1), and the viscosity equation (2) Calculate the velocity, pressure, temperature and viscosity associated with the flow of resin material 2 and particles 1 due to electrode compression. This Is stored in the storage device in association with the position of the finite element.

[0083] Next, in step 4006, it is determined whether or not the distance between the electrodes 4 is larger than the diameter of the particles. Here, when the distance between the electrodes 4 is equal to the diameter (φD) of the particles 1, in step 4007, the number 1 of particles 1 at the connection portion sandwiched between the electrodes 4 is output.

The next steps 2008 to 2014 are the calculation method shown in the flowchart of FIG. 4. In step 4008, the deformation amount of the particles is output. In step 4009, the deformation amount per arbitrary number of particles 1 and the conductivity between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5 are input. The conductivity is the current value I when an arbitrary voltage is applied between the electrodes. Here, the number N sandwiched between the electrodes 4 of the particles 1 is calculated in step 4007, and the deformation amount of the particles 1 is determined in step 4008. Here, FIG. 10 shows an example of the relationship between the inputted “deformation amount per arbitrary number of particles 1 and the conductivity between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5”. Note that here, Nl, N2, and N3 are shown as representative values of an arbitrary number of particles 1. In step 4007, the number of particles 1 at the connection part sandwiched between electrodes 4 is N1, N2, or N3. In the case of, the value can be obtained from the inner and outer cages.

Here, in Step 4010, the conductivity per particle is calculated from the deformation amount of Particle 1 obtained in Step 4008, and the conductivity per particle and the electrode 4 obtained in Step 4007 are calculated. The conductivity between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5 is calculated from the number of particles between them.

Next, in step 4011, calculation convergence is determined. Convergence is determined by comparing pressure with a pre-determined pressure range and determining that it is within the range as convergence. If it does not converge, return to step 400; At this time, prompt the operator for input and decide which step to return to.

[0087] In step 4012, the appropriateness of conductivity is determined. Here, it is determined whether the conductivity is within the specified value range, and if it is out of the specified range, the process returns to step 400; At this time, prompt the operator for input and decide which step to return to.

[0088] After determining that the calculation has converged in step 4011 and determining that the particle deformation is appropriate in step 4012, the calculation ends in step 4013. It should be noted that the “deformation amount per arbitrary number of particles 1 and the conductivity between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5” input in step 4009 is “per particle 1 per arbitrary number. The contact area between particle 1 and electrode 4 and the distance between electrode 4 of semiconductor integrated circuit (IC) 3 and electrode 4 of substrate 5 obtained from the relationship between the deformation amount of particle and the contact area between particle 1 and electrode 4 “Conductivity” can also be entered. In addition, although the electrical conductivity is a current value when an arbitrary voltage is applied between the electrodes, the present invention is not limited to this, and a resistance value between the electrodes can be used.

Example 5

[0089] [Pressure control of moving electrode]

First, the forming process to be analyzed will be described with reference to FIG. In the initial state (1-a), the resin material 2 containing the conductive particles 1 is placed between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5. In the molding step, the semiconductor integrated circuit (IC) 3 to which heat is applied is moved in the direction of the substrate 5 and the resin material 2 containing the particles 1 is compressed, whereby the resin material 2 containing the particles 1 flows.

[0090] At this time, the temperature of the resin material 2 changes due to the contact between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the resin material 2, and the resin material 2 together with the particles 1 changes in viscosity due to the temperature change. It flows while being compressed. When the distance between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5 becomes smaller than the diameter of the particle 1, the particle 1 sandwiched between the electrodes 4 is compressed while being deformed.

[0091] When the movement of the semiconductor integrated circuit (IC) 3 is completed (1b), the electrical conductivity between the particles 1 sandwiched between the electrodes 4 causes the electrical connection between the semiconductor integrated circuit (IC) 3 and the substrate 5 to occur. It is possible to convey a signal. Here, the contact area between the particle 1 and the electrode 4 is determined by the deformation amount of the particle 1, and the conductivity between the semiconductor integrated circuit (IC) 3 and the substrate 5 is determined by this contact area.

Note that the conductivity is evaluated by a current flowing when a constant voltage is applied between the electrodes 4. Here, the deformation amount of particle 1 is the ability of the device to apply a load from the top of the semiconductor integrated circuit (IC) 3, the deformation amount of particle 1 when the load is applied, the number of particles 1 sandwiched between the electrodes, Determined by viscosity change of resin material 2.

[0093] [Composition of Kakushin Sakai System]

Next, the analysis system used to predict the flow process of resin material 2 due to particle 1 deformation. Explain the system. The analysis system functions by executing software having the hardware configuration shown in FIG. 12 and having the flows shown in FIGS.

[0094] Specifically, it includes a computing device 6, a computing device 7 provided with a recording device 10 (hard disk, MO, etc.), a LAN 8 connecting these two computing devices, and a display device 9 provided in the computing device 7. . The CAD data created by the calculation device 6 may be transferred to the calculation device 7 via the LAN 8. The CAD data transferred to the computing device 7 can be recorded on the recording device 10 (node, disk, MO, etc.) of the computing device 7 for use.

The calculation device 7 executes the calculation according to the flowcharts shown in FIGS. 13, 4, 7, and 8, records the result in the recording device 10, and displays the result on the display device 9. Although not shown, the calculation devices 6 and 7 are naturally provided with input devices such as a keyboard and a mouse.

[0096] [Flowchart]

Next, the processing of the analysis program will be described along the flowchart of FIG. First, in the model shape creation step 1001, the analysis target model identified by the operator via the input device, that is, the electrode to be analyzed, the shape of the resin material including the initial particles, and the resin material including the particles can flow. Read space data from storage device 10.

[0097] Next, in step 1002 for creating a 3D solid element, the shape of the data read in model shape creation step 1001 is decomposed into a plurality of specific spaces (finite elements of a 3D solid), and the shape data of each finite element is obtained. Create

[0098] Next, in the physical property value input step 1003, density, thermal conductivity, specific heat, exothermic equation (Equation 7) to (Equation 11), viscosity equation (Equation 12) to (Equation 15), the arrangement, density, diameter of particle 1 and the amount of deformation when a load is applied to each particle 1 are displayed to prompt the operator, and these are displayed from the input device. Accept data. A: reaction rate, t: time, T: temperature, dA / dt: reaction rate, XI, X2: coefficient as a function of temperature, N, M, Xa, Ea, Xb, Eb: material specific coefficients, Q: Calorific value up to an arbitrary time, Qo: Total calorific value until the end of reaction, dQ / dt: Heat generation rate, η: Viscosity, 7] 0: Initial viscosity, t: Time, tO: Gelation time, T: Temperature, a, b, d, e, f, g: Indicates material-specific constants.

[Number 1]

m

Z P A P X P 1 0

(Ί) 0 E_ + L_ 4. ― + -LI

^{(l) u} one (cod) ρ (π ρ (ne

T9C690 / .00Zdf / X3d 93 △ D = D— D l (6)

[Equation 7]

dA / dt = (Kj + K ₂ A ^M ) (l- A) ^N (7)

[Equation 8]

_{Γ Γ} Κ _α exp (-^ IT) (8)

[Equation 9]

K ₂ = K _b exp (-^ IT) (9)

[0099] Next, in the boundary condition / molding condition input step 1004, a display prompting the operator to input the pressure applied to the top of the semiconductor integrated circuit (IC) 3 and the electrode 4 is performed, and the input device Force data is accepted. Here, the pressure applied to the top of the semiconductor integrated circuit (IC) 3 and the electrode 4 and the area of the top of the semiconductor integrated circuit (IC) 3 are applied to the top of the semiconductor integrated circuit (IC) 3 and the electrode 4. Calculate the load F.

Next, an analysis start instruction from the operator, initial time increment and analysis end time tend are accepted. The analysis increases the minute time and calculates the change for each time step. The time increment indicates the time step interval.

[0101] In step 1005, based on this instruction, continuous equations (1), Naviest status equations (2) to (4), and energy conservation equation (5) stored in the recording device are called. Initial time increment, pressure applied on top of semiconductor integrated circuit (IC) 3 and electrode 4, density of resin material, specific heat, thermal conductivity, exothermic equation (Equation 7) to (Equation 11) Substituting the viscosity equations (Equation 12) to (Equation 15), calculate the velocity, pressure, temperature and viscosity associated with the flow of the resin material 2 and particles 1 due to the compression of the electrode. This calculation result is stored in the storage device in association with the position of the finite element. [0102] where P; density, u; velocity in X direction, v; velocity in y direction, ω; velocity in Ζ direction, Τ; temperature, Ρ; pressure, t; time,; viscosity, Cp; Volume expansion coefficient, λ; thermal conductivity.

[Equation 10]

[Equation 11] dO / dt = Q ₀ (K ₁ + K ₂ A ^M ) {lA) ^N

[0103] Next, in step 1006, it is determined whether the analysis time is shorter than the set analysis end time tend. If the determination power is O, the analysis is terminated through calculation convergence determination and the like. If yes, go to step 1007.

[0104] In Step 1007, it is determined whether or not the distance between the electrodes 4 is larger than the diameter of the particles. Here, if the distance between the electrodes 4 becomes equal to the diameter (φϋ) of the particles 1, in step 1008, the number of particles 1 at the connecting portion sandwiched between the electrodes 4 is output.

[0105] From the next step 1009, the flow process of the resin material 2 accompanied by the deformation of the particles 1 is calculated. In the first step (1009) for calculating the flow process of the resin material 2 accompanied by the deformation of the particle 1, the deformation of the particle 1 is ignored, and the movement amount of the resin material 2 in the moving direction of the electrode 4 (= particle 1 Deformation amount) After calculating Δ 「1, the input“ Load per particle 1 was applied. From the “deformation amount in the case”, the load ΔF1 per particle 1 is calculated from the deformation amount ΔΗ1 of the particle 1. Here, Fig. 18 shows an example of the relationship of the input "deformation amount when a load is applied per particle 1 considering temperature change". Here, Tl, Τ2, and Τ3 represent temperature conditions, and Τ1>Τ2> Τ3.

[0106] In the next second step (1010), the load FJ2 applied to the top of the semiconductor integrated circuit (IC) 3 and the electrode 4 is equal to the set value F force of one particle 1 obtained in step 1009. The difference between the value obtained by the product of the load applied AF1 AF1 and the number of particles sandwiched between the electrodes obtained in Step 1008 Ν (FJ2 = F— Ν X AF1) is used! (Step 1011) .

[0107] After calculating the movement amount Δ 材料 2 of the resin material 2 due to the movement of the electrode 4 when this load FJ2 is applied (= deformation amount of particle 1), the deformation amount of particle 1 ΔΗ2 Calculate the applied load AF2, and let FJ3 = F—NX AF2 be the load condition applied to the semiconductor integrated circuit (IC) 3 in the next time step calculation.

[0108] In step 1012, the calculation in steps 1009 to 1011 is repeated, and in the Mth step, the deformation amount ΔΜ (Μ) of particle 1 and the load AF (M) applied to each particle are calculated. Then, the deformation amount of the particle 1 and the flow behavior of the resin material 2 are calculated (step 1012).

[0109] In step 1013, it is determined whether the interval between the electrodes 4 is greater than 0 or shorter than the analysis end time tend set for the analysis time. If the determination is NO, the calculation is performed. The analysis is completed through the convergence determination, etc., and if the determination is YES, the process proceeds to the determination in step 1014.

[0110] In step 1014, the load AF (M) applied per particle 1 from the load set value F applied to the upper part of the semiconductor integrated circuit (IC) 3 and electrode 4 and the electrode determined in step 1008 The value obtained by the product of the number N of particles sandwiched between the two is subtracted, and it is determined whether it is less than the value force (F—NX AF (M) ≤0). If the judgment force is O, repeat the calculation in step 1012. If the judgment power is WES, in step 1015, calculate the resin temperature using the Enelki equation (5) when the electrode moving speed is zero. I do.

[0111] Next, it is determined whether or not the analysis time is shorter than the set analysis end time tend in step 1016. If the determination power is SYES, step 1012 is repeated. Here, as shown in Fig. 18, the relationship between the compressive load input in step 1004 and the amount of particle deformation shows that when the physical property value considering temperature dependence is used, the increase in the resin temperature calculated in step 1015 However, the compressive load Δ F (M) is small even with the particle deformation amount Δ H, so if the judgment force O in step 1014 is F—NXAF (M) ≤0, the electrode in step 1012 Calculate the movement speed of is not 0.

[0112] Further, as the temperature shown in FIG. 18, the resin temperature at an arbitrary place obtained by the analysis can be used. For example, the average value of the resin temperature between the electrodes 4 calculated by the calculation of the flow process of 1012 and the temperature such as the resin temperature in the vicinity of the particle 1 can be used.

[0113] Here, if the determination in step 1016 is NO,

In step 1017, calculation convergence is determined. Convergence is determined by comparing pressure with a pre-determined pressure range, and determining that it is within the range as convergence. If it does not converge, return to steps 1001 to 1004; At this time, prompt the operator for input and decide which step to return to.

[0114] In step 1018, the appropriateness of particle deformation is determined. Here, the force in which the deformation amount of the particle is within the specified value range is determined, and if it is outside the specified range, the process returns to any one of steps 1001 to 1004. At this time, prompt the operator to input and decide which force to return to. In step 1017, determine that the calculation has converged. In step 1018, determine that the particle deformation is appropriate, and then end the calculation in step 1019. To do.

[0115] Note that as an input condition in Step 1003, an example of the relationship of deformation amount when a load is applied per particle 1 is shown. When a load per particle 1 is applied It is assumed that the relationship between the deformation amount and the deformation rate can be input, and the relationship between the stress applied to the particle 1 and the deformation amount and the deformation rate can be input. In addition, the exothermic equation is not limited to (Equation 7) to (Equation 11), and an arbitrary function including the reaction rate of the resin material 2 is used.

[0116] The viscosity equation is not limited to (Equation 12) to (Equation 15), and any function including temperature or reaction rate of the embryo material 2 can be used. In addition, the convergence determination can use any determination method. It is also assumed that 2D analysis can be performed in addition to 3D analysis alone. The above calculation uses the finite element method, the finite volume method, or the finite difference method. Suppose V can be calculated.

Example 6

[0117] [Switching from electrode speed to pressure control]

Next, processing of the analysis program will be described along the flowchart of FIG. First, in the model shape creation step 2001, the analysis target model specified by the operator through the input device, that is, the electrode to be analyzed, the shape of the resin material including the initial particles, and the resin material including the particles can flow. Read space data from storage device 10.

[0118] Next, in step 2002 of creating a 3D solid element, the shape of the data read in model shape creation step 2001 is decomposed into a plurality of specific spaces (finite elements of a 3D solid), and the shape data of each finite element Create

[0119] Next, in the physical property value input step 2003, the density, thermal conductivity, specific heat, exothermic equation (Equation 7) to (Equation 11), viscosity equation (Equation 12) to (Equation 15), the arrangement, density, diameter of particle 1 and the amount of deformation when a load is applied to each particle 1 are displayed to prompt the operator, and these are displayed from the input device. Accept data.

[0120] Next, in the boundary condition and molding condition input step 2004, the initial moving speed Vd of the semiconductor integrated circuit (IC) 3 and the electrode 4 and the maximum pressure applied to the upper part of the semiconductor integrated circuit (IC) 3 and the electrode 4 are The operator prompts the operator to enter data and receives data from the input device.

Here, the semiconductor integrated circuit (IC) 3 and the electrode 4 are calculated from the received maximum pressure applied to the upper part of the semiconductor integrated circuit (IC) 3 and the electrode 4 and the area of the upper part of the semiconductor integrated circuit (IC) 3. Calculate the maximum load Fmax that can be applied to the top of.

Next, an analysis start instruction from the operator, initial time increment, and analysis end time tend are accepted. In step 2005, based on this instruction, the continuous equation (1), Naviest status equations (2) to (4), and energy conservation equation (5) stored in the recording device are called, Accepted initial time increment, pressure applied on top of semiconductor integrated circuit (IC) 3 and electrode 4, density of embryo material, specific heat, thermal conductivity, exothermic equation (Equation 7) to (Equation 11), viscosity equation Substituting (Equation 12) to (Equation 15), calculate the velocity, pressure, temperature and viscosity associated with the flow of the embryo material 2 and particle 1 due to electrode compression. This calculation result is paired with the position of the finite element. Match and save to storage.

[0123] Next, it is determined whether or not the analysis end time set in step 2006 is shorter than the analysis end time tend. If the determination power is O, the analysis is terminated after calculation convergence is determined. If yes, go to Step 2007.

[0124] In step 2007, the load FJ applied to the resin when the electrode is moved at the initial moving speed Vd input in step 2004 is expressed as "contact area between moving electrode 4 and resin material 2" and "contact part". It is calculated as the product of “pressure of resin embryo 2”.

[0125] The maximum load Fmax applied to the upper part of electrode 4 in step 2008 is compared with the FJ obtained in step 2007. If Fmax> FJ, the electrode moves at the initial movement speed Vd entered in step 2004 in step 2009. If Fmax> FJ, switch to pressure control and calculate the electrode movement when the maximum load Fmax is applied to the top of electrode 4.

[0126] In step 2010, it is determined whether the distance between the electrodes 4 is larger than the diameter of the particles. If the distance between the electrodes 4 is larger than the diameter of the particle, return to step 2005 and repeat the calculation.If the distance between the electrodes 4 is equal to the diameter D of the particle 1), it is shown in Fig. 13. Steps 1008 to 1016 are calculated.

[0127] In step 2012, calculation convergence is determined. Convergence is determined by comparing the pressure with the force, and the pressure range that has been defined in advance, and determining that it is within the range as convergence. If it does not converge, return to step 200; At this time, prompt the operator for input and decide which step to return to.

[0128] In step 2013, the appropriateness of particle deformation is determined. Here, the force with which the deformation amount of the particle is within the specified value range is determined, and if it is outside the specified range, the process returns to any one of Step 200;! -2004. At this time, prompt the operator to input and determine which force to return to. In step 2012, determine that the calculation has converged. In step 2013, determine that the particle deformation is appropriate, and then end the calculation in step 2014. To do.

[0129] As an input condition in step 2003, an example of the relationship between the deformation amount when a load is applied per particle 1 is shown. When a load per particle 1 is applied The relationship between the amount of deformation and the rate of deformation) It is assumed that the relationship between the shape amount and the deformation rate can be input.

[0130] The exothermic equation is not limited to (Equation 7) to (Equation 11), and any function including the reaction rate of the resin material 2 can be used. The viscosity equation is not limited to (Equation 12) to (Equation 15), and any function including the temperature or reaction rate of the resin material 2 can be used.

[0131] In addition, an arbitrary determination method can be used for the convergence determination. It is also possible to perform 2D analysis in addition to 3D analysis. The above calculation can be performed using the finite element method, the finite volume method, or the finite difference method.

[0132] [Electrode pressure control analysis example (single layer resin)]

Here, Fig. 15 shows an example of analysis (two-dimensional analysis). In an initial state, a resin material 2 containing conductive particles 1 is placed between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5. Here, the embryo material 2 is assumed to have an initial temperature of 30 ° C, and the exothermic equations (Equation 7) to (Equation 11) and the viscosity equations (Equation 12) to (Equation 15) are used. In addition, constant values, density, thermal conductivity, specific heat values, particle diameter (φϋ), density of exothermic equations (Equation 7) to (Equation 11), viscosity equations (Equation 12) to (Equation 15) Is shown in Table 1.

[table 1]

Viscosity formula constant

Other physical properties

[0133] Further, the temperature of the semiconductor integrated circuit (IC) 3 is set to be constant (185 ° C), moved by applying a pressure of 5 MPa in the direction of the substrate 5, and the resin material 2 including the particles 1 is compressed. This causes the embryo material 2 containing the particles 1 to flow. At this time, the temperature of the resin material 2 changes due to the contact between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the resin material 2, and the resin material 2 is compressed together with the particles 1 while causing a viscosity change accompanying the temperature change. Calculate the flow process.

[0134] When the distance between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5 becomes smaller than the diameter of the particle 1, the calculation of the contact between the particle 1 and the electrode 4 is made in the analysis. Do not do. In other words, in the analysis, when the particles 1 are in contact with each other, and when the particles 1 and the electrode 4 are in contact with each other, the fluidity of only the resin material 2 is calculated by setting such that the particles 1 pass through the electrode 4. At this time, the pressure applied from the upper part of the semiconductor integrated circuit (IC) 3 is not the set value of 5 MPa, but as shown in the flowchart of FIG. 13, the relationship between the deformation amount of the particle and the compressive load shown in FIG. The value obtained by subtracting the load obtained from the number of particles sandwiched between the electrodes from the load obtained by the product of the set pressure and the area is used.

[0136] As a result of this calculation, if the load applied from the top of the electrode is equal to the compressive load required to deform the particles, the moving speed of the electrode becomes 0, and the temperature calculation of the resin without electrode movement is performed. Do. Here, as the resin temperature rises, the compressive load required to deform the particles decreases as shown in FIG. 18, so the calculation involving electrode movement is performed again.

Here, as the temperature shown in FIG. 18, the temperature at an arbitrary place determined by the analysis can be used.

For example, the average value of the resin temperature between the electrodes 4 calculated by the calculation of the flow process 1012 shown in FIG. 13 and the temperature of the resin near the particle 1 can be used. In addition, although the heat conduction calculation inside the particle is not performed here, the heat conduction calculation inside the particle can also be performed by inputting the specific heat of the particle, the heat conductivity, the heat transfer coefficient of the resin material and the particle, The temperature at an arbitrary position of the particle obtained by this heat transfer calculation can also be used as the temperature shown in FIG.

Thereafter, the analysis ends at the set analysis end time. At this time, the spacing force between the electrodes and the deformation amount of the particles 1 can be obtained. The deformation amount AD of the particle is the force S obtained from (Equation 6).

[Equation 15]

C (T) = f / T-g (15)

[0139] Here, D represents the diameter of the particle 1, D1 represents the distance between the substrates 4 after the analysis is completed. Note that, in the above, the force S indicating the case where the movement of the electrode 4 is controlled by the pressure S, and the present invention is not limited to this. As shown in the flowchart of FIG. 14, the movement of the electrode is changed from speed to pressure. It is also possible to control.

[0140] [Analysis example of electrode pressure control (double-layer resin)]

Here, Fig. 16 shows an example of analysis (two-dimensional analysis) in which the resin material is divided into two layers.

[0141] In the initial state, the particles 1 are contained on the upper part of the resin material 2 containing the conductive particles 1. A resin material having a two-layer structure made of a resin material 11 having different physical property values is disposed between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5. Here, the resin material 2 is assumed to have an initial temperature of 30 ° C., and the exothermic formulas (Formula 7) to (Formula 11) and the viscosity formulas (Formula 12) to (Formula 15) are used. The constant value, density, thermal conductivity, specific heat value, particle diameter (φD), density of the exothermic formula (Formula 7) to (Formula 11), viscosity formula (Formula 12) to (Formula 15) As for the first-layer resin material 2 and particle 1, the values of Table 1 are used, and the values of the second-layer embryo material 11 and particle 1 are shown in Table 2.

[Table 1] Constants of viscosity formula

Other physical properties

[Table 2] Material properties of the second layer of resin

Other physical properties

Specific heat freezing g 'K) Density Thermal conductivity

(Kg / rr ^) (W / (m 'Κ))

1000 1.95e3 0.97 particles

Diameter (〃m) Density

(Kg/

2 1.00e3

[0142] Here, the temperature of the semiconductor integrated circuit (IC) 3 is set to be constant (185 ° C), moved by applying a pressure of 5 MPa in the direction of the substrate 5, and the resin materials 2 and 11 are compressed. The resin materials 2 and 11 containing the particles 1 are caused to flow. At this time, due to the contact between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the resin materials 2 and 11, the temperature of the embryo materials 2 and 11 changes, and while the viscosity change accompanying the temperature change occurs, the resin material 2 and 11 Calculate the flow of 11 while being compressed with particle 1

Yes

[0143] When the distance between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5 becomes smaller than the diameter of the particle 1, the calculation of the contact between the particle 1 and the electrode 4 is made in the analysis. Do not do. In other words, in the analysis, if particles 1 are in contact with each other, and particle 1 and electrode 4 are in contact, particle 1 is in contact with electrode 4 Calculate the fluidity of resin materials 2 and 11 only by making settings such as slipping through

Yes

At this time, the pressure applied from the upper part of the semiconductor integrated circuit (IC) 3 is not the set value of 5 MPa, but as shown in the flowchart of FIG. 13, the relationship between the deformation amount of the particles and the compressive load shown in FIG. The value obtained by subtracting the load obtained from the number of particles sandwiched between the electrodes from the load obtained by the product of the set pressure and the area is used.

[0145] As a result of this calculation, if the load applied from the top of the electrode is equal to the compressive load required to deform the particles, the moving speed of the electrode becomes 0, and the temperature calculation of the resin without electrode movement is performed. Do. Here, as the resin temperature rises, the compressive load required to deform the particles decreases as shown in FIG. 18, so the calculation involving electrode movement is performed again.

Here, as the temperature shown in FIG. 18, the temperature at an arbitrary place obtained by analysis can be used.

For example, an average value of the resin temperature between the electrodes 4 calculated by calculation of the flow process of 1012, a temperature such as the resin temperature in the vicinity of the particle 1 can be used. In addition, although the heat conduction calculation inside the particle is not performed here, the heat conduction calculation within the particle can also be performed by inputting the specific heat of the particle, the heat conductivity, the heat transfer coefficient between the resin material and the particle, and the like. The temperature at an arbitrary position of the particle obtained by this heat transfer calculation can also be used as the temperature shown in FIG.

[0147] Thereafter, the analysis ends at the set analysis end time. At this time, the spacing force between the electrodes and the deformation amount of the particles 1 can be obtained. The deformation amount AD of the particle is the force S obtained from (Equation 6).

[Equation 6]

△ D = D-D 1 (6)

[0148] Here, D represents the diameter of the particle 1, D1 represents the distance between the substrates 4 after the analysis is completed. Note that, in the above, the force S indicating the case where the movement of the electrode 4 is controlled by the pressure S, and the present invention is not limited to this. As shown in the flowchart of FIG. 14, the movement of the electrode is changed from speed to pressure. It is also possible to control. In addition, although the heat conduction calculation inside the particle is not performed here, the heat inside the particle is determined by inputting the specific heat of the particle, the heat conductivity, the heat transfer coefficient between the resin material and the particle, etc. Conduction calculations can also be performed.

[0149] In the above, an example of the analysis in which the particle material 1 is included in the two-phase date resin material 11 is shown, but the present invention is not limited to this. It is assumed that the analysis can be performed in the state.

Example 7

[0150] [Prediction of conductivity, main force of particle coordinates (pressure control of electrode movement)]

FIG. 17 is a flowchart for predicting the conductivity between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5 according to the seventh embodiment of the present invention.

Here, the conductivity between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5 is predicted based on the input of the relationship between the particle deformation amount and the conductivity obtained in the flowchart of FIG. First, in the model shape creation step 3001, the analysis target model specified by the operator through the input device, that is, the electrode to be analyzed, the shape of the resin material including the initial particles, and the resin material including the particles can flow. Read space data from storage device 10.

[0152] Next, in step 3002 of creating a 3D solid element, the shape of the data read in model shape creation step 1001 is decomposed into a plurality of specific spaces (finite elements of a 3D solid), and the shape data of each finite element Create

[0153] Next, in the physical property value input step 3003, the density, thermal conductivity, specific heat, exothermic equation (Equation 7) to (Equation 11), viscosity equation (Equation 12) to (Equation 15), particle 1 arrangement, density, diameter, deformation amount when a load is applied to each particle 1, deformation amount per arbitrary number of particles 1 and semiconductor integrated circuit (IC) 3 The display prompts the operator to input the conductivity between the electrode 4 of the substrate 5 and the electrode 4 of the substrate 5 and receives these data from the input device.

[0154] Next, in the boundary condition / molding condition input step 3004, the operator is prompted to input pressure applied to the top of the semiconductor integrated circuit (IC) 3 and the electrode 4, and the input device Force data is accepted. Here, the pressure applied to the top of the semiconductor integrated circuit (IC) 3 and the electrode 4 and the area of the top of the semiconductor integrated circuit (IC) 3 are applied to the top of the semiconductor integrated circuit (IC) 3 and the electrode 4. Calculate the load F.

[0155] Next, an analysis start instruction from the operator, initial time increment, and analysis end time tend Accept. In step 3005, based on this instruction, the continuous equation (1), Naviest status equation (2) to (4), and energy conservation equation (5) stored in the recording device are called, Accepted initial time increment, pressure applied on top of semiconductor integrated circuit (IC) 3 and electrode 4, density of embryo material, specific heat, thermal conductivity, exothermic equation (Equation 7) to (Equation 11), viscosity equation Substituting (Equation 12) to (Equation 15), calculate the velocity, pressure, temperature and viscosity associated with the flow of resin material 2 and particles 1 due to electrode compression. The calculation result is stored in the storage device in association with the position of the finite element.

[0156] Next, in step 3006, it is determined whether the analysis time is shorter than the set analysis end time tend. If the determination power is O, the analysis is terminated after calculation convergence is determined. If yes, go to decision 3007.

[0157] In step 3007, it is determined whether the distance between the electrodes 4 is larger than the diameter of the particles. If the distance between electrodes 4 is larger than the particle diameter, return to step 3005 and repeat the calculation. If the distance between electrodes 4 is equal to the diameter of particle 1 (φ D), The number of particles 1 in the connection part sandwiched between the electrodes 4 or the coordinates of the particle 1 in the connection part sandwiched between the electrodes 4 is output. Next, the calculations in steps 1008 to 1016 shown in FIG. 13 are performed.

Next, in step 3010, the deformation amount of the particles and the moving speed of the electrode 4 obtained by the fluid analysis are output. In step 3011, the deformation amount of particle 1 output in step 3010, the deformation amount per arbitrary number of particles 1 input in step 3003, the electrode 4 of the semiconductor integrated circuit (IC) 3, and the electrode of the substrate 5 Conductivity force between 4 Calculate the conductivity per particle, and from the conductivity per particle and the number of particles between the electrodes 4 obtained in step 3008, the electrode 4 of the semiconductor integrated circuit (IC) 3 The conductivity between the electrodes 4 of the substrate 5 is calculated.

[0159] The electrical conductivity is the current value I when an arbitrary voltage is applied between the electrodes. Here, FIG. 9 shows an example of the relationship between the inputted “deformation amount per arbitrary number of particles 1 and conductivity between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5”. Here, Nl, N2 and N3 are shown as representative values of an arbitrary number of particles 1. In step 3008, the number of particles 1 at the connection part sandwiched between electrodes 4 is Nl, N2, N3. In cases other than, use the force S to find the value in the inner and outer cages. [0160] Here, in step 3012, calculation convergence is determined. Convergence is determined by comparing the pressure with the force, and the pressure range that has been defined in advance, and determining that it is within the range as convergence. If it does not converge, return to step 300; At this time, prompt the operator for input and decide which step to return to.

[0161] In step 3013, appropriateness of particle deformation is determined. Here, the force with which the deformation amount of the particle is within the specified range is determined, and if it is out of the specified range, the process returns to step 300; any force from! To 3004. At this time, prompt the operator for input and decide which step to return to.

[0162] In step 3012, it is determined that the calculation has converged. In step 3013, it is determined that the particle deformation is appropriate. Then, in step 3014, the calculation ends. It should be noted that the “deformation amount per arbitrary number of particles 1 and the conductivity between the electrode 4 of the semiconductor integrated circuit (IC) 3 and the electrode 4 of the substrate 5” input in step 3003 is “per particle 1 per arbitrary number. The contact area between particle 1 and electrode 4 and the conductivity between electrode 4 of semiconductor integrated circuit (IC) 3 and electrode 4 of substrate 5 obtained from the relationship between the deformation amount of particle and the contact area between particle 1 and electrode 4 In addition, although the conductivity is the current value when an arbitrary voltage is applied between the electrodes, the present invention is not limited to this, and the resistance value between the electrodes is not limited to this. Can be used.

Here, the coordinates of the particle 1 sandwiched between the electrodes 4 output in step 3008 and the moving speed of the electrode 4 output in step 3010 can be used as input conditions for the structural analysis. It is assumed that the coordinates of the output particle 1 can output an arbitrary position of the particle 1, and here, the coordinates of the center of the particle 1 are output.

[0164] Structure using input conditions (coordinate of particle 1 sandwiched between electrodes 4 and moving speed of electrode 4) and physical properties of particles (elastic modulus, density, Poisson's ratio, etc.) output in the calculation of this fluid As shown in Fig. 20, the analysis shows the deformation form when the particle 1 with coordinates input is compressed on the substrate 4 with the velocity of the electrode 4 as the input value, and the contact area between the particle 1 and the electrode. You can ask for it.

Note that the conductivity can be calculated from the contact area between the particle 1 and the electrode calculated in FIG. 20, using the relationship between the contact area between the particle 1 and the electrode 4 and the conductivity shown in FIG.

Claims

The scope of the claims

[1] (1) Import the data of the convex substrate to be analyzed, the shape of the resin material including the initial particles, and the space in which the resin material including the particles can flow into the storage device power calculation device,

(2) Based on the data, decompose into 3D solid elements,

(3) At least the density of resin material, thermal conductivity, specific heat, viscosity, particle external dimensions, density, load-displacement applied to each particle, external load applied to convex substrate F Enter

(4) By calculating the continuous equation, Naviest Itas equation, and energy conservation equation based on the 3D solid element, the change in the resin temperature is calculated by the contact between the convex substrate and the resin material. And calculate the process in which the resin material flows while being compressed along with the particles by the movement of the convex substrate,

(5) During the time when the gap between the compressed convex substrates is equal to the diameter of the particles, the number N of particles sandwiched between the convex substrates is output and calculated.

(6) After the time when the gap between the convex substrate after compression in (5) is equal to the diameter of the particle, the contact between the electrode and the particle is ignored, and the load applied to the convex substrate is From the load F input in (3) above, the relationship between the displacement of the load applied per particle input in (3) above from the gap between convex substrates and the convex shape obtained in (5) above Using the value obtained by subtracting the load obtained by the product of the number of particles N sandwiched between the substrates and N, the resin material containing the particles is compressed with a convex substrate from two directions, allowing the resin material and particles to flow. The flow analysis method of the resin material which included the particle | grains characterized by calculating the process made to do.

[2] (1) Import the data of the convex substrate to be analyzed, the shape of the resin material containing the initial particles, and the space in which the resin material containing the particles can flow into the storage device power calculation device,

(2) Based on the data, decompose into 3D solid elements,

(3) Enter at least the relationship of resin material density, thermal conductivity, specific heat, viscosity, particle density, external dimensions, and load displacement applied per particle,

(4) Enter the movement speed Vd of the convex substrate and the maximum external load Fmax applied to the convex substrate. (5) By calculating the continuous equation, Naviest-Itaus equation, and energy conservation equation based on the 3D solid element, the resin temperature changes due to the contact between the convex substrate and the tree material. Calculate the process by which the resin material flows while being compressed together with the particles, using the moving velocity Vd of the convex substrate,

(6) After the time when the gap between the convex shaped substrates after compression becomes equal to the particle diameter, the number N of particles sandwiched between the convex shaped substrates is output and calculated.

(7) After the time (6), when the gap between the convex substrate after compression becomes equal to the diameter of the particle, contact between the convex substrate and the particle is ignored, and the convex substrate After calculating the deformation amount ΔΗ of the particle from the amount of movement, the load AF applied per particle by the deformation amount ΔΗ of the particle is calculated from the relational expression of the load-displacement applied per particle input in (4) above. Calculate the load applied to the particles (FR = NXAF), and the load FJ applied to the resin by the moving convex substrate and the contact area between the moving convex substrate and the resin and the resin pressure of the part As the product of

(8) If the maximum external load Fmax applied to the substrate with an input convex shape is greater than the sum of the load FJ applied to the resin FJ and the load FR applied to the particles (Fmax≥FJ + FR), the convex shape If the maximum external load Fmax applied to the convex substrate is controlled by the moving speed Vd and the load FJ applied to the resin is smaller than the load FR applied to the particles (Fmax <FJ + FR), the boundary condition of convex substrate movement is switched to the external load (maximum load Fmax) applied to the convex substrate, and the resin material containing particles is transferred from two directions to the convex substrate. A flow analysis method for a resin material containing particles, characterized in that a step of causing the resin material and particles to flow by compression is calculated.

[3] In the flow analysis method of the resin material in which the particles according to claim 1 or claim 2 are contained,

As a method of inputting the relationship between the load applied to the particle and the displacement, the particle is characterized by inputting the relationship between the load applied to any number of particles and the displacement, or the relationship between the stress applied to any number of particles and the deformation rate. Flow analysis method for internal resin materials.

[4] In a flow analysis method for a resin material in which the particles according to claim 1 or 2 are contained, And

Particles having electrical conductivity, and calculating the electrical conductivity between convex substrates by inputting the relationship between the number of particles at the connecting portion, the deformation rate, and the conductivity. A flow analysis method for resin materials that contain.

[5] In the flow analysis method of a resin material in which the particles according to claim 1 or claim 2 are contained,

The particle has conductivity, and by inputting the relationship between the number of particles in the connecting part, the contact area between the particle and the convex substrate, and the conductivity, the conductivity between the convex substrates is output. A flow analysis method for a resin material in which particles are contained.

[6] In the flow analysis method of the resin material in which the particles according to claim 1 or claim 2 are contained,

A flow analysis method for a resin material containing particles, wherein the exothermic reaction equation of the resin material and a viscosity equation that is a function including the resin temperature are input and the flow process of the resin material and particles is output.

[7] In the flow analysis method of a resin material in which the particles according to claim 1 or claim 2 are contained,

The resin material is formed of two or more layers with different physical properties, the particles are arranged in one or more resins, and an exothermic reaction formula of two or more layers of resin and a viscosity equation that is a function including the resin temperature are input. A flow analysis method for a resin material containing particles, characterized by outputting a flow process of two or more layers of resin and particles.

[8] In the flow analysis method of the resin material in which the particles according to claim 1 or claim 2 are contained,

The method for analyzing the flow of a resin material containing particles, wherein the convex substrate is a semiconductor integrated circuit including an electrode and a substrate including an electrode.

[9] (1) An input unit that imports into the storage device power calculator the data of the convex substrate to be analyzed, the shape of the resin material containing the initial particles, and the space in which the resin material containing the particles can flow

(2) A processing unit that performs decomposition processing into a three-dimensional solid element based on the data, (3) At least the density of resin material, thermal conductivity, specific heat, viscosity, particle external dimensions, density, load-displacement applied to each particle, external load applied to convex substrate F Input part to input,

(4) By calculating the continuous equation, Naviest Itas equation, and energy conservation equation based on the 3D solid element, the change in the resin temperature is calculated by the contact between the convex substrate and the resin material. And a calculation unit that calculates a process in which the resin material flows while being compressed together with the particles by the movement of the convex substrate,

(5) an output unit that outputs and calculates the number N of particles sandwiched between the convex-shaped substrates at a time when the gap between the compressed convex-shaped substrates is equal to the particle diameter;

(6) After the time when the gap between the convex substrate after compression in (5) is equal to the diameter of the particle, contact between the convex substrate and the particle is ignored, and the convex substrate is formed. The applied load was calculated from the load F input in (3) above, the load displacement applied per particle input in (3) above from the gap between the convex substrates, and (5) above. By compressing a resin material containing particles from two directions with a substrate having a convex shape using a value obtained by subtracting the load determined by the product of the number N of particles sandwiched between the convex substrates, the resin material and A flow analysis system for resin material containing particles, comprising a calculation unit for calculating a process of flowing particles.

(1) An input unit that imports into the storage device power calculation device data on the convex substrate to be analyzed, the shape of the resin material containing the initial particles, and the space in which the resin material containing the particles can flow

(2) A processing unit that performs decomposition processing into a three-dimensional solid element based on the data,

(3) An input unit for inputting at least the relationship of resin material density, thermal conductivity, specific heat, viscosity, particle density, external dimensions, and load-displacement applied to each particle,

(4) Input part for inputting the movement speed Vd of the convex substrate, the maximum external load Fmax applied to the convex substrate,

(5) By calculating the continuous equation, Naviest-Itaus equation, and energy conservation equation based on the 3D solid element, the resin temperature changes due to the contact between the convex substrate and the tree material. Calculate and move the resin material together with the particles by the moving speed Vd of the convex substrate. An arithmetic unit that calculates the process of flowing while being compressed

(6) After the time when the gap between the convex substrates after compression becomes equal to the diameter of the particles, an output calculation unit that outputs and calculates the number N of particles sandwiched between the convex substrates,

(7) After the time (6), when the gap between the convex substrate after compression becomes equal to the diameter of the particle, contact between the convex substrate and the particle is ignored, and the convex substrate After calculating the deformation force ΔΗ of the resin material in the moving direction, the particle deformation amount Δ 1 is calculated from the relational expression of the load-displacement applied to each particle input in (4) above. Calculate the load AF applied to each piece, calculate the load applied to the particles (FR = NXAF), and add the load FJ applied to the resin by the moving convex substrate to the moving convex substrate and the resin. A calculation unit that calculates the product of the contact area and the resin pressure of the part,

(8) If the maximum external load Fmax applied to the substrate with an input convex shape is equal to or greater than the sum of the load FJ applied to the resin FJ and the load FR applied to the particles (Fmax≥FJ + FR), the convex shape If the maximum external load Fmax applied to the substrate with convex shape is controlled by the moving speed Vd and the load FJ applied to the resin and the load FR applied to the particles FR (Fmax <FJ + FR), the boundary condition of convex substrate movement is switched to the external load (maximum load Fmax) applied to the convex substrate, and the resin material containing particles is transferred from two directions to the convex substrate. A flow analysis system for resin material containing particles, comprising a calculation unit that calculates a process of causing the resin material and particles to flow by being compressed.

(1) Import the data of the convex substrate to be analyzed, the shape of the resin material containing the initial particles, and the space in which the resin material containing the particles can flow into the storage device power calculation device,

(2) Based on the data, decompose into 3D solid elements,

(4) By calculating the continuous equation, Naviest Itas equation, and energy conservation equation based on the 3D solid element, the change in the resin temperature is calculated by the contact between the convex substrate and the resin material. The resin material is compressed together with the particles by moving the convex substrate. The process of flowing while being

(6) After the time when the gap between the convex substrate after compression in (5) is equal to the diameter of the particle, the contact between the electrode and the particle is ignored, and the load applied to the convex substrate is From the load F input in (3) above, the relationship between the displacement of the load applied per particle input in (3) above from the gap between convex substrates and the convex shape obtained in (5) above Using the value obtained by subtracting the load obtained by the product of the number of particles N sandwiched between the substrates and N, the process of compressing the resin material containing particles from two directions with a convex substrate is calculated. A flow analysis method for resin materials containing particles.

(2) Based on the data, decompose into 3D solid elements,

(3) At least the resin material density, thermal conductivity, specific heat, viscosity, particle external dimensions, density, load-displacement relationship taking into account the temperature change per particle, added to a convex substrate Input the external load F,

(6) After the time when the gap between the convex substrate after compression in (5) is equal to the diameter of the particle, the contact between the electrode and the particle is ignored, and the load applied to the convex substrate is From the load F input in (3) above, the relationship between the load and displacement taking into account the temperature change per particle input in (3) above from the gap between the convex substrates and the above (5) Using the value obtained by subtracting the load obtained from the product of the number of particles N sandwiched between the convex substrates, the process of compressing the resin material containing particles from the two directions on the convex substrate is calculated. (7) The load F entered in (3) above is

If the load is greater than the load calculated by the product of the relationship between the load displacement applied per particle input in (3) above and the number of particles N sandwiched between the convex substrates determined in (5) above, The process of compressing a resin material containing particles of ½) with a convex substrate from two directions is repeatedly calculated,

The load F entered in (3) above is

If the load applied per particle input in (3) above is equal to the load calculated by the product of the relationship between displacement and the number of particles sandwiched between the convex substrates determined in (5) above, the electrode The movement speed of is assumed to be 0, the temperature of the resin material is calculated using the energy equation, and the relationship between the load and displacement applied to each particle input in (3) above changes as the temperature rises.

The load F input in (3) above is the relationship between the load displacement applied per particle input in (3) above and the number of particles N sandwiched between the convex substrates determined in (5) above. If it becomes larger than the load obtained by the product of

Particles characterized by calculating the flow of the resin material and the particles by repeatedly calculating the process of compressing the resin material containing the particles of (6) above with a convex substrate from two directions. Of flow analysis of resin material that contains.

(2) Based on the data, decompose into 3D solid elements,

(3) Enter at least the relationship of load / displacement considering the density, thermal conductivity, specific heat, viscosity, particle density, external dimensions, and temperature change per particle,

(4) Enter the movement speed Vd of the convex substrate and the external load F applied to the convex substrate.

(5) By calculating the continuous equation, Naviest-Itaus equation, and energy conservation equation based on the 3D solid element, the resin temperature changes due to the contact between the convex substrate and the tree material. Calculate and move the resin material together with the particles by the moving speed Vd of the convex substrate. Calculate the process of flowing while being compressed,

(6) The load FJ applied to the resin by the moving convex substrate is calculated as the product of the contact area between the moving convex substrate and the resin and the resin pressure, and the load F FJ entered in (4) above. Relationship

If F≥FJ, calculate the process in which the electrode moves at the moving speed Vd of the convex substrate entered in (4) above.

If F <FJ, the electrode is compressed by the load F input in (4) above, and the process of movement is calculated.

(7) After the time when the gap between the convex shaped substrates after compression becomes equal to the particle diameter, the number N of particles sandwiched between the convex shaped substrates is output and calculated.

(8) After the time when the gap between the convex substrate after compression in (7) is equal to the diameter of the particle, the contact between the electrode and the particle is ignored, and the load applied to the convex substrate is From the load F input in (4) above, the relationship between the load and displacement taking into account the temperature change per particle input in (3) above from the gap between the convex substrates, and the above (7) Using the value obtained by subtracting the load obtained from the product of the number of particles N sandwiched between the convex substrates, the process of compressing the resin material containing particles from the two directions on the convex substrate is calculated.

(9) The load F entered in (4) above is

If the load is greater than the load obtained by the product of the relationship between the load displacement per particle input in (3) above and the number of particles N sandwiched between the convex substrates obtained in (7) above ( 8) Repeatedly calculate the process of compressing the resin material containing the particles from two directions with a convex substrate,

The load F entered in (4) above is

If the load applied per particle input in (3) above is equal to the load calculated by the product of the relationship between the displacement and the number of particles sandwiched between the convex substrates determined in (7) above, the electrode The movement speed of the resin is assumed to be 0, the temperature of the resin material is calculated using the energy equation, and the relationship between the load and displacement applied per particle input in (3) above changes as the temperature rises. By

The load F input in (4) above is the relationship between the load displacement applied per particle input in (3) above and the number of particles N sandwiched between the convex substrates determined in (7) above. If it becomes larger than the load obtained by the product of

Particles characterized by calculating the flow of the resin material and the particles by repeatedly calculating the process of compressing the resin material containing the particles of (8) with a convex substrate from two directions. Of flow analysis of resin material that contains.

[14] In the flow analysis method of the resin material in which the particles according to claim 11 or claim 12 or claim 13 are contained, as an input method of the relationship between the load applied to the particles and the displacement, per arbitrary number of particles Flow of resin material containing particles, characterized by inputting the relationship considering the temperature change of applied load and displacement, or the stress applied to any number of particles and the relationship considering temperature change of deformation rate analysis method.

[15] In the relationship considering the temperature change of the load and displacement applied to the particles according to claim 14, the temperature uses the average value of the resin temperature between the substrates obtained by analysis or the resin temperature at any place between the substrates. A flow analysis method of a resin material containing particles characterized by the above.

[16] In the flow analysis method of the resin material in which the particles according to claim 11 or claim 12 or claim 13 are contained,

The particles to which the relationship of the deformation amount considering the temperature change according to claim 14 is input have conductivity. By inputting the relationship between the number of particles at the connecting portion, the deformation rate, and the conductivity, the convex shape A method for analyzing the flow of a resin material containing particles, characterized in that the conductivity between certain substrates is output.

[17] In the flow analysis method of a resin material containing particles according to claim 11 or claim 12 or claim 13,

The particle having the relationship of the deformation amount considering the temperature change described in claim 14 has conductivity, and the relationship between the number of particles at the connecting portion, the contact area between the particle and the convex substrate, and the conductivity is input. A flow analysis method for a resin material containing particles, characterized in that the conductivity between the convex substrates is output. [18] In the flow analysis method for a resin material containing particles according to claim 11 or claim 12 or claim 13,

The resin material is formed of two or more layers having different physical property values, and the particles having the relationship of the deformation amount considering the temperature change according to claim 4 are arranged in one or more resins, and the two or more layers are arranged. A flow analysis method for a resin material containing particles, wherein the exothermic reaction equation of the resin and the viscosity equation, which is a function including the resin temperature, are input and the flow process of two or more layers of resin and particles is output.

[19] In the flow analysis method of a resin material containing particles according to claim 11 or claim 12 or claim 13,

A flow analysis method for a resin material containing particles, wherein the calculated position of the particles sandwiched between the electrodes is output.

[20] The moving speed of the electrode calculated by the flow analysis method of the resin material in which the particles according to claim 11 or claim 12 or claim 13 are contained, and between the substrates output by the calculation method of claim 18. A calculation method characterized in that a structural analysis is performed using the position of a particle sandwiched between two particles as an input condition, and the deformation amount of the particle, the deformation mode of the particle, or the contact area between the particle and the electrode is calculated.

[21] The deformation amount of the particle calculated by the calculation method according to claim 20, or the contact area between the particle and the electrode,

Using the relationship between the number of particles in the connecting portion, deformation rate, and conductivity, or the relationship between the number of particles in the connecting portion and the contact area between the particle and the convex substrate, the conductivity between the convex substrates The calculation method of the resin material which included the particle | grains characterized by carrying out output calculation of this.

[22] (1) Input unit for importing into the storage device power calculation device data on the convex substrate to be analyzed, the shape of the resin material containing the initial particles, and the space in which the resin material containing the particles can flow

(3) At least the density of resin material, thermal conductivity, specific heat, viscosity, particle external dimensions, density, load-displacement applied to each particle, external load applied to convex substrate F Input part to input, (4) By calculating the continuous equation, Naviest Itas equation, and energy conservation equation based on the 3D solid element, the change in the resin temperature is calculated by the contact between the convex substrate and the resin material. And a calculation unit that calculates a process in which the resin material flows while being compressed together with the particles by the movement of the convex substrate,

(6) After the time when the gap between the convex substrate after compression in (5) is equal to the diameter of the particle, the contact between the electrode and the particle is ignored, and the load applied to the convex substrate is From the load F input in (3) above, the relationship between the displacement of the load applied per particle input in (3) above from the gap between convex substrates and the convex shape obtained in (5) above A calculation unit is provided that calculates the process of compressing the resin material containing particles from two directions with a convex substrate using the value obtained by subtracting the load obtained by the product of the number N of particles sandwiched between the substrates. A flow analysis system for resin materials containing particles.

(3) At least the resin material density, thermal conductivity, specific heat, viscosity, particle external dimensions, density, load-displacement relationship taking into account the temperature change per particle, added to a convex substrate Input section for inputting external load F,

(6) After the time when the gap between the convex substrate after compression in (5) is equal to the diameter of the particle, the contact between the electrode and the particle is ignored, and the load applied to the convex substrate is From the load F input in (3) above, the relationship between the load and displacement taking into account the temperature change per particle input in (3) above from the gap between the convex substrates and the above (5) Calculate the process of compressing the resin material containing particles from two directions with a convex substrate by using the value obtained by subtracting the load obtained by the product of the number N of particles sandwiched between convex substrates and N Computing unit,

(7) The load F entered in (3) above is

If the load is larger than the load obtained by the product of the relationship between the load displacement per particle input in (3) above and the number N of particles sandwiched between the convex substrates obtained in (5) above ( 6) Repeatedly calculating the process of compressing the resin material containing the particles from two directions with a convex substrate,

The load F entered in (3) above is

If the load calculated by the product of the relationship between the load and displacement applied per particle input in (3) above and the number of particles N sandwiched between the convex substrates determined in (5) above is equal to the electrode The movement speed of the resin is assumed to be 0, the temperature of the resin material is calculated using the energy equation, and as the temperature rises, the relationship between the load and displacement applied to each particle input in (3) above changes.

A calculation unit for calculating the flow of the resin material and the particles by repeatedly calculating the process of compressing the resin material containing the particles of (6) with a convex substrate from two directions is provided. A flow analysis method for a resin material containing characteristic particles.

(2) Based on the data, decompose into 3D solid elements,

(3) At least resin material density, thermal conductivity, specific heat, viscosity, particle density, external dimensions, grains An input unit that inputs the relationship between load and displacement in consideration of the temperature change applied to each child,

(5) By calculating the continuous equation, Naviest-Itaus equation, and energy conservation equation based on the 3D solid element, the resin temperature changes due to the contact between the convex substrate and the tree material. An arithmetic unit that calculates and calculates the process in which the resin material flows while being compressed along with the particles, based on the moving velocity Vd of the convex substrate,

(6) The load FJ applied to the resin by the moving convex substrate is calculated as the product of the contact area of the moving convex substrate and the resin and the resin pressure, and the maximum load input in (4) above. The relationship between Fmax and FJ is

If Fmax≥FJ, calculate the process in which the electrode moves at the moving velocity Vd of the convex substrate input in (4) above.

If Fmax <FJ, the electrode is compressed by the load Fmax input in (4) above, and a calculation unit that calculates the process of movement,

(7) After the time when the gap between the convex substrates after compression becomes equal to the diameter of the particles, an output unit that outputs and calculates the number N of particles sandwiched between the convex substrates;

(8) After the time when the gap between the convex substrate after compression in (7) is equal to the diameter of the particle, the contact between the electrode and the particle is ignored, and the load applied to the convex substrate is From the load Fmax input in (4) above, the relationship between the load-displacement considering the temperature change applied per particle input in (3) above from the gap between the convex substrates and the above (7) is obtained. Using the value obtained by subtracting the load obtained from the product of the number of particles N sandwiched between the curved convex substrates, the process of compressing the resin material containing the particles with the convex substrate from two directions is calculated. Computing unit,

(9) The load Fmax entered in (4) above is

If the load is greater than the load obtained by the product of the relationship between the load displacement per particle input in (3) above and the number of particles N sandwiched between the convex substrates obtained in (7) above ( 8) Repeat the process of compressing the resin material containing the particles from two directions with a convex substrate. Calculate repeatedly,

The load Fmax entered in (4) above is

If the load applied per particle input in (3) above is equal to the load calculated by the product of the relationship between the displacement and the number of particles sandwiched between the convex substrates determined in (7) above, the electrode The movement speed of the resin is assumed to be 0, the temperature of the resin material is calculated using the energy equation, and as the temperature rises, the relationship between the load and displacement applied to each particle input in (3) above changes.

The load Fmax force input in (4) above The load applied per particle input in (3) above and the relationship between the displacement and the number of particles N sandwiched between the convex substrates obtained in (7) above If it becomes larger than the load determined by the product,

A calculation unit that calculates the flow of the resin material and the particles by repeatedly calculating the process of compressing the resin material including the particles of (8) with a convex substrate from two directions. A flow analysis system for resin materials containing the characteristic particles.