WO2008042596A2 - Systèmes de mémoire destinés à un nettoyage de mémoire à phases utilisant un bloc de nettoyage de mémoire à phases ou un bloc de mémoire bloc-notes comme mémoire tampon - Google Patents

Systèmes de mémoire destinés à un nettoyage de mémoire à phases utilisant un bloc de nettoyage de mémoire à phases ou un bloc de mémoire bloc-notes comme mémoire tampon Download PDF

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Publication number
WO2008042596A2
WO2008042596A2 PCT/US2007/078836 US2007078836W WO2008042596A2 WO 2008042596 A2 WO2008042596 A2 WO 2008042596A2 US 2007078836 W US2007078836 W US 2007078836W WO 2008042596 A2 WO2008042596 A2 WO 2008042596A2
Authority
WO
WIPO (PCT)
Prior art keywords
block
garbage collection
data
write command
storage system
Prior art date
Application number
PCT/US2007/078836
Other languages
English (en)
Other versions
WO2008042596A3 (fr
Inventor
Shai Traister
Jason Lin
Original Assignee
Sandisk Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/541,012 external-priority patent/US7441071B2/en
Priority claimed from US11/541,035 external-priority patent/US7444462B2/en
Application filed by Sandisk Corporation filed Critical Sandisk Corporation
Publication of WO2008042596A2 publication Critical patent/WO2008042596A2/fr
Publication of WO2008042596A3 publication Critical patent/WO2008042596A3/fr

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Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • G06F12/0253Garbage collection, i.e. reclamation of unreferenced memory
    • G06F12/0269Incremental or concurrent garbage collection, e.g. in real-time systems
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • G06F12/0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72Details relating to flash memory management
    • G06F2212/7203Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72Details relating to flash memory management
    • G06F2212/7205Cleaning, compaction, garbage collection, erase control

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Memory System (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

L'invention concerne un procédé de nettoyage de mémoire à phases. Selon ce procédé, une commande d'écriture est reçue afin d'écrire des données. La commande d'écriture se voit allouer une période limite pour exécuter la commande d'écriture. Ensuite, un signal d'occupation est évalué et une partie d'une opération de nettoyage de la mémoire est effectuée pendant une durée de nettoyage de la mémoire. Les données sont écrites dans un bloc et le signal d'occupation est libéré avant la fin de la période limite.
PCT/US2007/078836 2006-09-28 2007-09-19 Systèmes de mémoire destinés à un nettoyage de mémoire à phases utilisant un bloc de nettoyage de mémoire à phases ou un bloc de mémoire bloc-notes comme mémoire tampon WO2008042596A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/541,035 2006-09-28
US11/541,012 US7441071B2 (en) 2006-09-28 2006-09-28 Memory systems for phased garbage collection using phased garbage collection block or scratch pad block as a buffer
US11/541,012 2006-09-28
US11/541,035 US7444462B2 (en) 2006-09-28 2006-09-28 Methods for phased garbage collection using phased garbage collection block or scratch pad block as a buffer

Publications (2)

Publication Number Publication Date
WO2008042596A2 true WO2008042596A2 (fr) 2008-04-10
WO2008042596A3 WO2008042596A3 (fr) 2008-07-31

Family

ID=39269077

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/078836 WO2008042596A2 (fr) 2006-09-28 2007-09-19 Systèmes de mémoire destinés à un nettoyage de mémoire à phases utilisant un bloc de nettoyage de mémoire à phases ou un bloc de mémoire bloc-notes comme mémoire tampon

Country Status (2)

Country Link
TW (1) TWI376600B (fr)
WO (1) WO2008042596A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI396975B (zh) * 2008-08-06 2013-05-21 Realtek Semiconductor Corp 可調適緩衝裝置及其方法
US7898859B2 (en) * 2009-06-15 2011-03-01 Micron Technology, Inc. Use of emerging non-volatile memory elements with flash memory
TWI592800B (zh) 2016-10-04 2017-07-21 大心電子(英屬維京群島)股份有限公司 記憶體管理方法及使用所述方法的儲存控制器
TWI790383B (zh) * 2019-06-19 2023-01-21 慧榮科技股份有限公司 資料儲存裝置與資料處理方法
US11494299B2 (en) 2021-02-18 2022-11-08 Silicon Motion, Inc. Garbage collection operation management with early garbage collection starting point

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050141312A1 (en) * 2003-12-30 2005-06-30 Sinclair Alan W. Non-volatile memory and method with non-sequential update block management
WO2006065655A1 (fr) * 2004-12-16 2006-06-22 Sandisk Corporation Memoire remanente et procede avec indexage ameliore pour blocs de zone de travail et de mise a jour
US20060161728A1 (en) * 2005-01-20 2006-07-20 Bennett Alan D Scheduling of housekeeping operations in flash memory systems

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050141312A1 (en) * 2003-12-30 2005-06-30 Sinclair Alan W. Non-volatile memory and method with non-sequential update block management
WO2006065655A1 (fr) * 2004-12-16 2006-06-22 Sandisk Corporation Memoire remanente et procede avec indexage ameliore pour blocs de zone de travail et de mise a jour
US20060161728A1 (en) * 2005-01-20 2006-07-20 Bennett Alan D Scheduling of housekeeping operations in flash memory systems

Also Published As

Publication number Publication date
WO2008042596A3 (fr) 2008-07-31
TWI376600B (en) 2012-11-11
TW200821829A (en) 2008-05-16

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