TW200821829A - Memory systems for phased garbage collection using phased garbage collection block or scratch pad block as a buffer - Google Patents

Abstract

A method for phased garbage collection is provided. In this method, a write command is received to write data. The write command is allocated a timeout period to complete an execution of the write command. Thereafter, a busy signal is asserted and a portion of a garbage collection operation is performed for a garbage collection time period. The data are written to a block and the busy signal is released before the timeout period.

Description

200821829 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates generally to memory operations and, more particularly, to methods and systems for performing staged garbage collection operations. [Prior Art] In a non-volatile memory storage system, a block of information stored in a memory is periodically garbage collected (i.e., compressed or merged) to recover the storage capacity of the memory. In a typical garbage collection operation, valid data is copied from one block to another. After transferring valid data, the original block is erased to provide storage capacity. The target 'write operation can trigger a non-issue memory storage system to perform garbage collection operations. The host, when triggered, allows a fixed amount of time to be used for the execution of a write operation that includes a garbage collection operation. For example, a secure digital agreement limits the amount of time to 250 milliseconds. If the non-volatile memory storage system exceeds this fixed amount of time in a write operation, a timeout error may occur. The size of the memory block is increasing due to increased capacity, higher parallelism, and grain size scaling. Therefore, the execution of the writer operation takes a long time due to the transmission of more resources (4). This can easily exceed the fixed amount of time allocated to the write operation. Therefore, when the number of times to perform the garbage collection operation exceeds the fixed time amount, it is necessary to prevent the timeout error. [Summary of the Invention] Various embodiments of the present invention Methods and/or systems for staged garbage collection operations are provided. It should be understood that the specific embodiments, such as a method, a circuit, a system, or a device, can be implemented in a number of ways. Several embodiments of the present invention. In a specific embodiment, a method for phased garbage collection is provided. In this method, a write command is received to write data. The write command is assigned a timeout period. To complete the execution of the write command. Then, announce a busy signal and execute the garbage during a garbage collection time period Collecting a portion of the operation. Writing the data into a block and releasing the busy signal before the timeout period. Other embodiments of the present invention will be apparent from the following detailed description, taken in conjunction with the claims DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The detailed description of one or more embodiments is provided in conjunction with the accompanying drawings. The scope of the invention is to be construed as being limited by the claims Specific embodiments of the invention are described in some or all of the specific details. For the purpose of clarity, the technical materials known in the technical fields related to the specific embodiments are not described in detail to avoid unnecessarily obscuring the description. Unclear. The specific embodiments described herein provide for staged garbage collection. Method and/or system. In general, the garbage collection operation can be divided into multiple stages. The stage (or part) of the garbage collection operation can be performed in multiple timeout periods. As explained in more detail below, in a timeout During the period, the portion of the garbage collection operation may be received from the write command in the -phase garbage collection block or a temporary storage block. The storage is performed according to the present invention. Example - A simplified example of a non-volatile memory storage system. A host system (for example, a CD-ROM, a voice player, a digital camera, and other computing devices). The volatile memory library system should read and read data from the system. The non-volatile memory storage system 1〇2 can be embedded in the main unit or connected to the host in a removable manner. It is shown that the non-volatile memory system 102 includes a memory controller (10) in communication with the memory 118. The target controller 110 controls the operation of the memory 118 to include writing (or programming). )data, Access to the information, in addition to wiping data, phase data, focusing on garbage collection operations and other operations. The memory controller U0 includes a bus bar m' which is interfaced through the host interface ι〇4 fish system bus 126 and the memory controller interfaces with the body interface 118 through the memory interface 108. The host interface 1〇4 , processor 1〇6 (eg, microprocessor, microcontroller, and other processors), memory interface (10), random access memory (RAM) 112, error correction code (ECC) circuit ιΐ4, and read-only memory (ROM) 116 communicates via bus 124. r〇m 116 can store a storage system firmware containing program instructions for controlling the operation of memory 。 8. Processor 〇6 is configured to execute from r Program instructions loaded by 〇m 116. The storage system firmware can be temporarily loaded into the RAM 112, and in addition the ruler "can be used to buffer data transmitted between a host and the memory ι8. The ECC circuit 114 can check for errors that pass through the memory controller 1 between the host and the memory 118. If an error is found, the number of 124728.doc 200821829 depends on the ECC algorithm that the ECC circuit 114 can correct for several error bits. The memory 118 can include array logic 12G, a non-volatile memory cell array m, and a (four) single (four) and 31 volatile memory cell array 122 can include various non-volatile memory structures and techniques. Examples of non-volatile memory technologies include flash memory (eg, nand, n〇r,

Single-order quasi-cell (SLC/BIN), multi-level cell (mlc), split bit line NOR (DIN0R), AND, high capacitance ratio (f) cr), asymmetric contactless transistor (ACT) and other flashes Memory), erasable programmable read-only memory (dirty (10)), electrically erasable programmable read-only memory (EEPROM), read-only memory (_), _ secondary programmable memory (OTP) and other memory technologies. In a particular embodiment, memory 118 can additionally include a memory cell array 123 configured to store a buffer. The buffer is configured to store data in a phased garbage collection operation. As explained in more detail below, in a phased garbage collection operation, new data received from a write command can be stored in the buffer. It will be appreciated that the buffer may also be positioned in the RAM 112 or the non-volatile crypto unit P train 122 in accordance with a particular embodiment of the present invention. Similar to the non-volatile memory cell array 122' memory cell array 123 can include a variety of memory structures and techniques. Because the memory cell array 123 is configured for buffering operations, the memory cell array can incorporate different memory structures or use different parameters that are faster, more economical, and more reliable than the non-volatile memory array 122. The array logic 120 employs a non-volatile memory cell array 122 and a memory 124728.doc 200821829. The cell array 123 interfaces with the memory controller 11 and can provide, for example, an array of non-volatile memory cells and the memory cell. Array addressing, > material transfer and sensing, and other support. To support the non-volatile memory cell array 122 and the memory cell array 123, the array logic 12A may include a column decoder, a row decoder, a charge pump, a word line voltage generator, a page buffer, an input/output buffer, Address buffers and other circuits. Figure 2 is a simplified block diagram of the organization of the memory cell array in a plane. The one or more memory cell arrays can be divided into a plurality of planes or sub-arrays. In the example of Fig. 2, a memory cell array is divided into four planes 202 to 205. It should be understood that other numbers of planes (e.g., 丨, 2 n or even a plane) may be present in a non-volatile memory storage system. Each of the planes 202, 203, 204 or 2〇5 can be divided into blocks of memory cells positioned in the individual planes 202 to 205, such as blocks 21〇 to 213 and (4) to (2). The number of cells in the (4) unit is the minimum number of memory cells that can be physically erased. In order to obtain increased parallelism, the blocks may operate in larger metablock units, and the blocks from each plane 202, 203, 204 or 205 are logically linked in the unit of material. To form a metablock. For example, 'four blocks 21 〇 to 213 can be logically linked to form a __ metablock. Furthermore, the blocks used to form the unary block may be from their individual planes (e.g., from position 2〇2 to within. For example, four positions from their respective planes 2〇2 to 2〇5) Blocks 220 through 223 may be logically coupled together to form another metablock. The unary block may span all four logical planes 202 to 2 within the non-volatile memory storage system 124728.doc 200821829 ( And extending or the non-volatile memory storage "may employ - or a plurality of different planes - or a plurality of blocks to dynamically form a metablock.

Figure 3 is a simplified block diagram of a page of memory cells. Each block (e.g., blocks 21() through 213) is stepped into a page of memory cells. As shown in Fig. 3, 'every block 2H', 211, 212 or 213 is divided into eight pages p〇 to P7. Alternatively, there may be 16, 32 or more pages of memory cells within each block 21, 211, 212 or 2i3. To increase the operational parallelism of the non-volatile memory storage system, pages within two or more blocks can be logically linked into a metapage. For example, a page (e.g., P1) from each of the four blocks 2 10 to 2 13 may be employed to form a unitary page. A unitary page may extend across all planes within the non-volatile memory storage system or the non-volatile memory storage system may employ one or more of one or more different planes or one or more of the separate blocks Dynamically Forming Metapages 0 Figure 4 is a simplified block diagram of sections of memory cells. A page can be further divided into one or more segments. The amount of material in each page can be an integer of one or more segments of the data, with each segment storing 5 12 data bytes. Figure 4 shows page 401 divided into two sections 402 and 404. Each segment 402 or 404 contains data 4 0 6 ' that can be 5 12 byte sizes and management data 4500 associated with the material. The management profile 405 can be 16 bytes in size and can store, for example, an ECC calculated using the data 406 during stylization, a logical address associated with the data, erased and reprogrammed the block. Count of counts, control flags 124728.doc -11 - 200821829 Standard, operating voltage level, and other information associated with this material. Figure 5 is a simplified block diagram of one of the logical "faces between a host and a non-volatile memory storage system. A contiguous logical address space 512 provides the address of the data for the power X to store in the memory. The logical address space 512 as observed by the host can be divided into increments of data clusters. Each of the clusters has several sections of the package >, for example between 4 and 64 sections. As shown in Figure 5, the application executing on the host creates three profiles 1, 2 or 3. Files 2, 2 or 3 can be ordered data sets and identified by unique names or other references. The host assigns the address space that has not been assigned to other files to file 1. Here, the file system is shown as having been able to assign a continuous range of available logical addresses. When the host computer establishes the file 2 after the file 1 is created, the host also assigns two consecutive ranges of consecutive addresses in the jade room 5 12 of the address. The host may not assign consecutive logical addresses to a file (e. g., file i, 2, or 3), but instead may have n pieces of logical addresses that have been assigned to logical addresses between other files. The example of Figure 5 shows that another file 3 is assigned a non-contiguous range of addresses within the logical address space 512 that was not previously assigned to the game and 2 and other materials. "The host can track the logical address two 512' by maintaining the file allocation table (FAT), which maintains the logical address assigned by the host to each data standard (for example, t cases 1 to 3). In the case where the volatile memory storage system stores files 1 to 3, the host refers to the files by the logical addresses of the files rather than by the physical location. On the other hand, the non-volatile memory storage system borrows The logical address in which the data has been written is 124728.doc •12-200821829, and the files are referenced to 3 instead of being referenced by the file. The non-volatile field: 1 address ^ The physical storage system converts the logical address provided by the main device into a memory cell array (10). (4) The unique entity storage system maintains the value stored in the Sr column from the host. Block 5〇4 indicates this = bit Site-transformation

Figure 6 is a generalized flow (IV) of an operation for staged garbage collection in accordance with an embodiment of the present invention. It should be noted that the material stored in the specific host logical address can be rewritten by the new data because the original storage data becomes obsolete. In response, the non-volatile memory storage system writes new data in an update block and then changes the logical-to-physical address table for the logical address to identify a new physical block in which the new material is stored. The blocks containing the original f material in the logical addresses are then erased and made available for storing additional data. This type of erasure can occur before the writer operates. Thus, the memory controller learns that after writing new data to the same logical address, the host has caused the data in a given logical address to be discarded or invalid. Many blocks of memory can therefore store invalid data for a period of time. The size of the block and block is increasing and this results in a large proportion of individual greed being written to store the storage capacity of less than one dollar block and in many cases even less than the storage capacity of a block. . Because the non-volatile memory storage system can direct new data to the erased metablock block, such booting can result in portions of the block or metablock that are not filled. If the new data is an update of some of the data stored in another metablock, 124728.doc -13- 200821829 will also need to logically address the logical address from the logical address adjacent to the new data element page. The remaining valid data element pages of the other metablock are copied in the new metablock. The old metablock can hold other valid material metapages. Therefore, it is possible to discard or invalidate certain meta pages of a different metablock and replace the data with new data having the same logical address written to a different metablock. In order to maintain sufficient physical memory space to store resources in the logical address space

U material, which can be used for periodic garbage collection (ie, compression or consolidation). In general, garbage collection involves reading valid data from a block and writing valid data to a new block, ignoring invalid data in the program. For example, in the block diagram of Fig. 5, the creation of the new data file 3 causes the old data file 3 to be discarded. The old data file 3 can be erased to recover the physical capacity used by the old data file 3. However, in the case where File 2 and Old File 3 are stored in the same physical block, such an erase operation will trigger a garbage collection operation. 〃 Returning to Figure 6, the non-volatile memory storage system can perform a garbage collection operation within a timeout period assigned to a write command. If the garbage collection operation cannot be completed within a timeout period, the garbage collection operation may be componentd in several different stages (or portions) in accordance with one embodiment of the present invention. ^ The non-volatile memory storage system uses the timeout assigned to multiple write commands to perform the garbage collection (10) portion. In other words: the two-sex memory storage system performs a portion of the garbage collection operation using the timeout period J assigned to the plurality of write commands. As shown in Fig. 6, in the operation 6〇2, the write command 124728.doc -14-200821829 is used to write new data. As used herein, the term "new data" is defined as the data received by the non-volatile record storage system from a write command to be written to the memory. The write command is assigned - the timeout period is The execution of the write command is completed. In other words, the timeout period is a time period for executing the write command. An example of the allocated timeout period is 25 milliseconds. The write command can be a single region. Segment write command or a multi-segment write command. As explained in more detail below, in a single sector write command, (4) data can be written as a single-segment write across the random address of the memory. In a multi-session write command, multiple segments of new data having adjacent logical addresses are written to the memory. The right cannot complete a garbage collection operation within the timeout period, as operation 604 does not. The garbage collection operation is performed within the timeout period assigned to the write command. The remainder of the garbage collection operation may be completed in a later timeout period. For example, Figure 7 shows a specific f in accordance with the present invention. Shi For example, one of the three garbage collection operations of the plurality of portions 780 and 781 is U 35 (four) block diagram. As shown in FIG. 7 '- non-volatile memory storage system, first receiving the evening segment write command 704, and The new data 76 〇 to 762 is then received to store it in the memory. After receiving each of the data mo, 761 or 762, the busy signal 7 〇 2 is declared. The body storage system announces a busy signal 7〇2 to allow execution of the write command, which may include a garbage collection operation (if needed), and/or his operation. When the busy signal is declared 7〇2, a host Do not send another order or additional information to the non-volatile memory storage system. The non-volatile memory storage system can receive each of the data 76〇, 761 or 762 124728.doc -15 - 200821829 The busy signal is declared after the amount of time because the host allows a limited fixed amount of time (ie, the time period is up to 752) for the execution of the writer command. If the busy signal is in the ratio timeout period 750 , 751 or 752 long The host can repeat the write command or interrupt the program for a period of time. Therefore, the non-volatile memory storage system cannot announce the busy number 702 within a timeout of 75 〇, 751 or 2 over the timeout period. Deactivating the busy signal 7G2 after completing the writing of the plurality of segments 76() to the plurality of segments enables the host to communicate with the non-volatile memory storage system. Still referring to FIG. 7, the plurality of timeout periods 750 may be utilized. The garbage collection portions 780 and 781 are distributed between 752. In other words, the non-volatile memory storage system can utilize each of the timeout periods 75 〇, 751 or 752 to perform each portion 78 〇 or 781 of a garbage collection operation. For example, the _th portion of the garbage collection operation is executed during the first timeout period 75G. Here, one part of the valid material can be copied from one block to another during the first-time period of 75 。. During the second timeout period 751, the previous garbage collection operation initiated in the first-timeout period continues. The non-volatile memory storage system performs a second portion 781 ' of the previous garbage collection operation during the material cycle 751 until the previous garbage collection is completed. By copying the remaining or last portion of the valid data from one block to another, it can be: a previous garbage collection. If the previous garbage collection operation cannot be completed within the second timeout period 751, the non-volatile memory storage system can: Complete the garbage collection operation using a subsequent timeout period (e.g., third timeout 752). At the end of the multi-session write command 7G4, the non-volatile memory 124728.doc -16 - 200821829 volume storage system may announce the busy nickname 7〇2 after receiving the stop command 706 until all sections of the data 760-762 are Write to the memory cell array. It should be noted that Figure 7 illustrates the operations associated with a multi-session write command. As explained in more detail below, the garbage collection operation performed may be different for earlier segment write commands and multi-session write commands. For example, as explained in more detail below, the type of buffer used to store new data may depend on the received write command to be a sector write command or a multi-session write command.

C./ Returning to FIG. 6' After performing a portion of the garbage collection operation within the -time period, new data received from the write operation may be stored in operation 606 in association with the non-volatile memory storage system. In the buffer. Specifically, the buffer may be in an early array with the non-volatile memory (for example, the non-volatile memory array shown in FIG.! is called the related structure. - The data structure - the example includes non-volatile memory Body:: array-block 'for example - staged garbage collection block or a temporary storage block = is explained in more detail below. In another specific embodiment: ❹ can be 1 volatile (four) single (four) column - Zone 2 = new data can be stored in the RAM associated with the non-volatile (eg, in a block of the _call shown. In another and new sub-pins, as explained above) The two bodies that can be placed are located in the block of the separated memory cell array (for example, the five-dimensional 兀 兀 兀 array 123 shown in Fig. 1). The phasic garbage collection block is used as the buffer. According to the embodiment of the present invention, a detailed flow chart for performing the staged garbage collection as a buffer for the stage garbage 124728.doc -17-200821829 garbage collection block is shown in FIG. Receiving a write command in operation 802 to write new data into As explained in more detail below, the write command can be used to write a single segment of data to a single-segment write command of the memory. After receiving the write command, the non-volatile memory is stored. System ^ announces a busy signal in operation 804. Execute the garbage collection time period before executing the write command

One part of the garbage collection operation. For example, in one embodiment, one or more first blocks are selected for garbage collection operations. The one or more first blocks may contain invalid data and/or valid data. As shown in operation 〇6, the valid data is copied from one or the first block to a second block in the garbage collection time period in the garbage collection operation. According to the garbage collection time period assigned to the garbage collection operation and the valid data to be copied: a part of all valid data or valid data is copied to the second block. In one example, the garbage collection time period allocated for the garbage collection operation can be expressed as the garbage collection time period = timeout period mpr 〇 g 〇 〇). The timeout period as described above is a fixed finite time period. :Pr:g is the maximum stylized time associated with writing new data to the memory = the non-volatile memory storage system writes the new data to the memory of the human (g, the most ^ (4). In the equation, There are two most A-stylized times n, P as explained in more detail below. The first maximum stylized time #R & 卞 冩 一 一 一 一 而且 而且 而且 而且 而且 而且 而且 而且 而且 而且 而且 而且 而且 而且 而且 而且 而且 而且 而且 而且 而且 而且 而且 而且Write the new data to the temporary storage block. Therefore, in a specific case 124728.doc -18- 200821829, the non-volatile grammar U body storage system track is used to track valid data from one or more The first block copies the number of times from the Muni 11 to the Haidi 2 block. The non-volatile memory stores the plums, and stops copying before the time exceeds the garbage collection time period. In the case of the garbage collection operation, the new data associated with the write command may be written into the one-stage garbage collection block in operation 810. The non-volatile memory remains. The system can be used during or after the month of garbage collection. The data is written into the staged garbage collection block. The stage garbage collection block has the characteristics of the update block. Generally speaking, the data received from the write command can be written into an update block. Assigned as an update block for each logical group in which the data is updated. - The group has a logical address group of one size equal to the size of the metablock. It should be noted that the logic of the data The segments are stored in a logical group that includes a set of logically adjacent segments. As described in more detail below, the cells are managed to update blocks to receive data in a sequential or scrambled order (i.e., non-sequential order). The staged garbage collection block may or may not be associated with one or more first blocks or the second block. For example, in one embodiment, one or more first blocks, the second zone Blocks and phased garbage collection blocks are configured to span a single logical group or a single group of logical addresses. Therefore, data from a single logical group can be stored in a staged garbage collection block, but cannot be from The data of the same logical group is stored in the stage garbage collection block. After the new data is written into the stage garbage collection block and the garbage collection operation is performed within the garbage collection operation time period, the non-volatile memory 124728.doc -19- 200821829 The storage system cancels the busy signal before the time _ in operation 812.

a : The total time to execute a write command that includes a garbage collection operation or a garbage collection operation is not excessive. If part of the garbage collection operation is performed during the timeout period, the remainder is completed in the subsequent timeout period. When the garbage collection is completed, the - or multiple first blocks that have been garbage collected are erased (or identified as obsolete) and made available to store additional information. Further, as explained in more detail below, the staged garbage collection block can be converted into an update block. Then, another new stage garbage collection block that replaces the stage garbage collection block that has been converted into an update block can be allocated to store new data from the subsequent write command in the stage garbage collection operation. 9A and 9B are simplified block diagrams of memory blocks in accordance with an embodiment of the present invention in which garbage is collected for sequence update blocks in a stage. As shown in Figure 9A, the original block A 9〇2 and the associated sequence update block A 904 are selected for garbage collection. An update block can be managed to receive data in a sequential or scrambled order (i.e., non-sequential order). It should be understood that a sequence of update blocks (e.g., sequence update block A 904) is a metablock allocated when a write command is received from the host to write data, the data filling one or more of a logical group. Entity pages, for which all valid data is currently located in the same metablock. The sectors of the data that have been written to the sequence update block are written sequentially in the logical address so that the segments replace the corresponding logical segments written in the original block. A sector updated in this logical group can be written to this sequence update block until the sequence update block is closed or converted to a messy update block. It should be noted that when the last physical segment location of the update block of the sequence 124728.doc -20- 200821829 is written, the sequence update block is considered closed. In other words, the closure of the sequence update block can be generated by the sequence update block being completely populated by the updated segment data written by the host or copied from the original block. As explained in more detail below, when a segment of data written by a host is logically non-sequenced with a previously written segment of data within the updated logical group, sequence updates may be employed by conversion Blocks to create cluttered update blocks. ί Original block A 902 may contain invalid and valid data, which is represented in Figure 9α by a hatched pattern and a dashed pattern. It should be noted that in addition to the valid material from the original block A 902, the sequence update block a 9〇4 additionally contains the existing material 905, which is written to the sequence block A before the garbage collection operation. When receiving a write command for writing new data 91〇, the write mark can trigger the shutdown of the sequence update block A 9〇4, which is one type of garbage collection operation because the new data system is different from Associated with a logical group of the sequence update block A. The non-volatile memory storage system announces a busy signal and then copies the valid data from the original block A 9〇2 to the sequence update block A 904 until the first garbage collection time period is reached. The non-volatile memory stores (4) the tracking time during the copying, and the non-volatile memory storage system stops the copying operation before exceeding the first garbage collection time period 9〇6. As shown in Fig. 9A, it is impossible to complete the garbage collection in the first garbage collection time period 906 because the remaining valid data still exists in the original block A 9〇2. In this case, after the portion 904 of the valid data, before the first timeout period is reached,

Allow (4) to write new data 91〇 to the staged garbage collection block for the remainder of the time. A 124728.doc 200821829 908 ° Figure 9B shows the remainder of the garbage collection operation that can be completed in a second timeout period. Here, a second write command to write new material 918 is received after receiving the first write command. Therefore, a second timeout period is assigned to the second write command. During the second timeout period, the remaining valid material is copied from the original block A 902 to the sequence update block a 904. In this example, all remaining valid data (or the last portion of the valid data) may be copied to the sequence update block A 904 during the second garbage collection time period 912. Therefore, the garbage collection operation can be completed in the second timeout period. Erasing the original block A 9 0 2 and making it available for storing additional data 'because the garbage collection operation is completed within this second timeout period. Since the sequence update block A 904 is filled, the sequence update block a is converted into a new original block A 914 or a non-updated block. In addition, the staged garbage collection block A 908 is converted to an update block (e.g., update block b 916), which may or may not be associated with the new original block A 914. A new staged garbage collection block (eg, staged garbage collection block c 908) is also allocated to store new materials. If the new data 91 8 from the far second write command is from the same logical group as the new data 910, the new data 91 8 from the second write command can be written to the update block B 916. On the one hand, as explained in more detail below, the new data 918 from the younger one of the write commands is from a different logical group than the new data 91', then the new data from the second write command is 9丨8 Write to the staged garbage collection block C 908. 10A and 10B are simplified block diagrams of a memory block in accordance with an embodiment of the present invention in which garbage clutter 124728.doc -22-200821829 is collected in a stage. As shown in FIG. 10A, the original block a 1002 and the messy update block A 1004 are selected for garbage collection. In general, a cluttered update block (e.g., clutter update block A 1004) allows segments of data to be updated in a random order within a logical group, and any individual segments can be repeated. ^ When a segment of data written by a host is logically non-sequential with a previously written segment of data in the updated logical group, the sequence can be used to establish the mess by converting a sequence of updated blocks. Update the block. All segments of the data updated in this logical group are sequentially written in an available segment location below the hash update block, regardless of the logical segment address of the segments within the group. Here, the original block A 1002 and the clutter update block A 1〇〇4 contain invalid and valid data, which are represented by a hatched pattern and a broken line pattern in Fig. 10A, respectively. When receiving a write command to write new data 1〇〇1, the non-volatile memory storage system announces a busy signal and then transfers the valid data from the original block A 1002 and the messy update block 八〇 〇4 is copied to the new block A 1006 until the first garbage collection time period is reached 1〇5〇. The non-volatile memory storage system tracks the time during copying, and the non-volatile memory storage system stops the copying operation before the first garbage collection time period exceeds 〇5〇. As shown in Fig. 10A, the garbage collection operation cannot be completed within the first garbage collection time period 1050 because the remaining valid data remains in the original block input block 1 and the messy update block block A 1004. Therefore, after copying the portion of the valid data to the new block A 1〇〇6, the new data 1 0 01 received before the garbage collection operation is started is written into the stage garbage collection block A before the first timeout period is reached. 1 〇〇$. 124728.doc 23- 200821829 Figure 1 OB shows the remainder of the garbage collection operation that can be completed in a second timeout period. A second write command is received after receiving the first write command. Therefore, a second timeout period is assigned to the second write command. During the second timeout period, the remaining valid data is copied from the original block A 1002 and the messy update block A 1004 to the new block a 1〇06. Here, all remaining valid data (or the last part of the valid data) can be copied to the new block A 1〇〇6 within the second garbage collection time period 1 〇 5 2 . Therefore, the garbage collection operation can be completed in the second timeout period. Since the garbage collection operation is completed within this second timeout period, the original block A 1002 and the messy update block A 1004 can be erased and made available for storing additional data. After erasing the original block A 1002 and the messy update block a 1〇〇4, the new block A 1006 is converted into the new original block A 1010 and the staged garbage collection block A 1008 is converted into the updated block B 1012 It may or may not be associated with the new original block A. Since the garbage collection operation has been completed, another order # garbage collection block C 1 014 is allocated to store new data. As shown in FIG. 10B, if the new data 1〇〇5 received from the second write command is in the same logical group as the new material 1001, the new data 1〇〇5 can be written to the update block B. 1012. However, as explained in more detail below, if the new data 105 is from a different logical group than the new data 1 〇 〇 1, the new data 1005 is written to the phasic garbage collection block c 1014. Figures 11A through 11E are simplified block diagrams of memory blocks in accordance with another embodiment of the present invention in which garbage collection is performed on a cluttered update block. As shown in Fig. 11A, when a write command for writing new material 2〇12 is received, the original block G 2002 and the messy update block G 2004 are selected 124728.doc -24- 200821829 for garbage collection. Here, the original block G 2002 and the messy update block G 2004 contain invalid and valid data, which are represented by a hatched pattern and a dotted line pattern, respectively, in FIG. After receiving the write command, the non-volatile memory storage system announces a busy signal and then copies the valid data 攸 original block G 2002 and the messy update block g 2004 to the new block G 2008 until the first garbage is reached. The collection time period is 2〇〇6. The non-volatile memory storage system tracks the time during the copying, and the non-volatile memory storage system stops the copying operation before the first garbage collection time period 2〇〇6 is exceeded. As shown in Fig. 11A, the garbage collection operation cannot be performed in the first garbage collection time week/month 2006 because the remaining valid data still exists in the original block and the messy update block G 2004. Therefore, after copying the valid > part of the material to the new block G 2 0 0 8 , the new data 2〇12 received before the garbage collection operation is started is written into the stage garbage collection area before the first timeout period is reached. Block G 2010. Figure 11B shows the remainder of the garbage collection operation that can be completed in a second timeout period. A second write command is received after receiving the first write command. Therefore, a second timeout period is assigned to the second write command. During the second timeout period, the remaining valid data is copied from the original block G2002 and the messy update block G2004 to the new block g2006. Here, all remaining valid data (or the last part of the valid data) may be copied to the new block G 2008 during the second garbage collection time period 2 014. Therefore, the garbage collection operation can be completed in the second timeout period. Since the garbage collection operation is completed within this second timeout period, the original block G 2002 and the messy update block G 2004 can be erased and made available for storing additional data. 124728.doc -25- 200821829

In addition, the new block G 2008 is converted into a new original block G 2016 and the staged garbage collection block G 2010 is converted into an update block Η 2018. Since the garbage collection operation has been completed, another stage garbage collection block j 2020 is allocated to store new data. If the new data 2022 received from the second write command is in the same logical group as the new data 20 12, the new data 2022 can be written to the update block Η 2018. However, in the sequence shown in Figure 11A, the new data 2022 and the new data 2012 are from different logical groups. Therefore, the new data 2022 is written to the staged garbage collection block J 2020 instead of the updated block Η 2018. Since the phased garbage collection block J 2020 can store data from a single logical group, the staged garbage collection block J may not be able to store new data that can be received in subsequent write operations. Therefore, a new garbage collection operation is performed during the second garbage collection time period 2014. Another garbage collection operation is performed during the remaining time remaining during the second garbage collection time period as shown in Figure 11c. Here, the original block K 2202 and the messy update block K 2204 are selected for garbage collection. The original block κ 22〇2 and the messy update block K 2204 contain invalid and valid data, which are represented in Figure uc by a hatched pattern and a dotted pattern, respectively. After completing the garbage collection operation shown in FIG. 11β, the non-volatile memory storage system uses the remaining time in the first timeout period (ie, the remaining second garbage collection time period 2216) to save valid data from the original block. κ 22〇2 and the messy update block Κ 2204 are copied to the new block κ 22〇6. As shown in Figure uc, the garbage collection operation cannot be completed in the remaining second garbage collection time period 2216, because the remaining blocks K 2202 and the messy update block size 22〇4 still have the remaining 124728.doc -26- 200821829 Effective information. In Fig. 11D, a third write command is received after the second write command and a third timeout period is assigned to the third write command. The garbage collection operation could not be completed within the second garbage collection time period 2 2 3 6 . Therefore, the new block K 2206 cannot be converted into an update block. In this example, the new data received from the third write command belongs to a different logical group from the new data 2〇22, and there is no open update block. The data from a single logical group can be stored in the stage garbage collection block J 2020, but (' cannot store data from different logical groups in the stage garbage collection block J. Therefore, there is no block. It can be used to store new data received from the third write command. In the example of FIG. 11D, when new data is received and data has been stored in the phased garbage collection block J 2020 (eg, new data 2〇22), The data in the stage garbage collection block J is garbage collected before the new data of the third write command can be written or customized. The allocation is used to complete the 〇"Hai second write command The third timeout period can be used for garbage collection operations. However, if the third garbage collection time period 2236 does not provide sufficient time to become a garbage collection operation, the phased garbage collection block is not empty and therefore Not ready to receive or store data from the third write command. Therefore, new data cannot be written in the third timeout period and a timeout error will occur. For the new data received, the map UE shows the allocation of another phased garbage collection block (ie, the staged garbage collection block M 2212) for the garbage collection operation in the third timeout period. If the remaining 124728.doc -27- 200821829 Ο

The second garbage collection time period 2216 does not provide sufficient time to complete the map. In the second garbage collection operation shown, the non-volatile memory storage system can initially allocate two or more staged garbage collection blocks. As shown in Figure ,1, two phased garbage collection blocks are initially allocated, namely the staged garbage collection block J 2020 and the staged garbage collection block μ 2212. Using the additionally allocated phase garbage collection block Μ 2212, if the garbage collection operation cannot be completed within the third timeout period, the third write command belonging to the logical group different from the new data 2〇22 may be The new data received 22丨4 is stored in the staged garbage collection block. Therefore, new material 2214 can be written in the third timeout period and a timeout error does not occur. Using a Staging Block as a Buffer Figure 12 is a flow diagram of a detailed operation for performing a staged garbage collection using a temporary storage block as a buffer in accordance with an embodiment of the present invention. As shown in Fig. 12, a write command is received in operation m2 to put new data into m. In the specific embodiment, the writer command, the single zone slave write command. In some cases, as explained in more detail below, according to another embodiment, the λ person may be a multi-segment write command after receiving the "Hai write command". The non-volatile memory storage system announces a _ busy signal during operation. In the execution of the write life less than π ^, then, in the work 1106 in the garbage collection time :: Π: collection operation - part. For example, the - specific (four) or multiple first block blocks are selected for garbage collection operations. The - garbage collection time week ^ invalid data and / or valid information. Copy the valid data in the hash to a second block. According to the sub-collection 124728.doc -28- 200821829 garbage collection time period allocated to the garbage collection operation and the number of valid data to be copied, part of all valid data or valid data is re-installed. Haidi - block. In the example, the garbage collection time period allocated for garbage collection operations can be expressed as garbage collection time period = timeout period _Tprog (2〇) where the timeout period as described above is a fixed finite time period. Tprog is the maximum programmed time associated with writing new data to memory or the maximum time it takes for a non-volatile memory storage system to write new data into memory. Thus, in one embodiment, the non-volatile memory storage system tracks the amount of time to copy valid data from - or a plurality of first blocks to a beta block. The non-volatile memory storage system stops replicating before the time exceeds the garbage collection time period. Right.... The hunter completes the garbage collection operation by the garbage collection time period, and then the new data associated with the write command can be written to the temporary block in the stay 1108. It should be understood that a temporary block is in the form of one of the data update blocks, wherein the logical segments within the associated logical group can be updated in a random order and can be repeated in any number. The temporary block is created by a write command, and the predicted logical segment in the frame does not end or intersect with the boundary of the physical page. Because the non-volatile memory storage system may not be able to program a portion of the page, a section of a page may be temporarily stored in the temporary block. The non-volatile memory health system accumulates a section of pages in the temporary block until all segments of the page are populated with new data from different write commands. The non-volatile memory storage system then copies the entire page (eg, 鉼 # # ^ (4) (example * eight sections of New Becc) from the staging area 124728.doc -29- 200821829 block in a stylized operation Go to another block (for example, an update block). The temporary block can therefore contain the value of part of the physical page of the data. The temporary block can be used to save each update area in the non-volatile memory storage system. A valid page of the new data of the block. Further, in a specific embodiment, the temporary storage block may maintain one or more valid pages of the new data of the updated block. The non-volatile e-memory storage system may have For example, the eight update blocks allocated and thus the temporary block can store nine or more valid pages of new data. The non-volatile memory storage system can be new before, during or after the garbage collection operation The data is written to the temporary storage block. As explained in more detail below, once the additional section of the new data is received in order to reach the physical page boundary or with the parent, the garbage collection operation can be completed. The new data is then copied from the temporary storage block to an update block. After the new data is written into the temporary storage block and the garbage collection operation is performed during the garbage collection time period, the non-volatile memory storage system is operating. The busy signal is released before the timeout period in 1110. Therefore, the total time for executing a write command that includes a garbage collection operation or a garbage collection operation does not exceed the timeout period. If executed within the timeout period In one part of the garbage collection operation, the remainder is completed in a subsequent timeout period. When the garbage collection operation is completed, one or more first blocks that are garbage collected are erased and made available for storing additional material. 13A and 13B are simplified block diagrams of memory blocks in accordance with an embodiment of the present invention, wherein the sequence update block is garbage collected in a stage. As shown in FIG. 13A, the original block a 1202 and The associated sequence update block A 1204 is selected for garbage collection. The original block a 1202 may contain 124728.doc -30- 200821829 with invalid and valid data, This is indicated by a hatched pattern and a dashed line pattern, respectively, in Figure 13A. When receiving a -write command to write new data 1210, the 'Writer command can trigger the sequence update block A 12G4 to close. The type of garbage collection operation, because the new data system is associated with a logical group that does not have an open update block or because the new data causes the sequence update block A to be converted into a messy update block. The non-volatile memory The storage system announces a busy signal and then copies the valid data from the original block 八12〇2 to the sequence update block A 1204 until the first garbage collection time period 1208 is reached. It should be noted that except for the original block a 12〇2 In addition to the valid data, the sequence update block A 1204 additionally contains the existing data 12〇5, which is written to the sequence update block A before the garbage collection operation. During the copying period, the non-volatile 3 memory storage system tracks the time, and the non-volatile memory storage system stops the copying operation before the first garbage collection time period 丨2〇8 exceeds. As shown in Figure 13A, the garbage collection operation cannot be completed within the first garbage collection time period 1208 because the remaining valid data still exists in the original block a 1202. Therefore, after copying the portion of the valid data to the sequence update block A 1204, the new material 1210 is written to the temporary storage block 12〇6. Figure 13B shows the remainder of the garbage collection operation that can be completed in a second timeout period. Here, a second write command for writing a new material 1224 is received after the first write command. Therefore, a second timeout period is assigned to the second write command. During the second timeout period, the remaining valid data is copied from the original block A 1202 to the sequence update block a 12〇4. In this example, all remaining valid data (or the last portion of the valid data) may be copied to the sequence update area 124728.doc -31- 200821829 block 八12〇4 during the second garbage collection time period 1214. Therefore, the garbage collection operation can be completed in the second timeout period. Since the padding sequence update block A 12〇4, the sequence update block A is converted into a new original block A 1212 or a non-update block. The original block A 1202 is erased and can be made available for storing additional data because it is garbage collected during this first timeout period. After erasing the original block A 1 So], the update block C 1222 is allocated and the new data 1222 received from the second write command can be written to the newly allocated update block c. It should be noted that the update block c 1222 may or may not be associated with the new original block A 丨 2 丨 2 . After the garbage collection is completed in the second timeout period, if the second time period memory is available, the non-volatile memory storage system may store the new memory in the temporary storage block 12〇6. The data 1210 is copied to the update block C 1222. The temporary block 1206 acts as a temporary buffer because new data (e.g., new data 121) written to the temporary block is later copied to another block (e.g., updated block C 1222). In the example of Fig. 13B, at the time when the second time-out period memory is used to copy the new material 121 from the temporary block 12〇6 to the update block C 1222. The new data 1210 stored in the temporary storage block 1206 is in the same logical group as the new material 1224. Therefore, the new material 1210 is copied to the update block c 1222 after the garbage collection operation is completed. The new data 121〇 stored in the temporary storage block 12〇6 is identified as invalid and thus the extra space in the temporary storage block can be made available for storing additional new data. It should be noted that the new data 121〇 and the new data 1224 may belong to different logical groups. If the new data 12 10 and the new data 1224 belong to different logical groups, the new data 1210 will remain in the temporary storage block 1206. Once the new data 124728.doc -32-200821829 1224 is written to update block C 1222', a new garbage collection operation can be initiated during the second timeout period. Therefore, in the case of completing the new garbage collection operation, a new update block (not shown) can be allocated, and new data 12〇 can be copied from the temporary storage block 1206 to the new update block. 14A and 14B are simplified block diagrams of memory blocks in accordance with an embodiment of the present invention in which garbage blocks are garbage collected in stages. As shown in Fig. 14A, the original block D 1302 and the messy update block 〇 13〇4 are selected for garbage collection. Here, the original block D 1302 and the hash update block D 1304 contain invalid and valid data, which are represented by a hatched pattern and a dotted line pattern in Fig. 14A, respectively. When receiving a write command to write new data 13 12 , the non-volatile memory storage system announces a busy signal and then copies the valid data from the original block D 13 〇 2 and the messy update block D 1304 to New block d 1308 until the first garbage collection time period 1306 is reached. The non-volatile memory storage system tracks the time during copying, and the non-volatile memory storage system stops the copying operation before the first garbage collection time period 1306 is exceeded. As shown in Fig. 14A, the garbage collection operation cannot be completed within the first garbage collection time period 13〇6, because the original block D 1302 and the messy update block! ) The remaining valid data still exists in 13〇4. Therefore, after copying the portion of the valid data to the new block d 1308, the new data 丨3丨2 received at the start of the garbage collection operation is written to the temporary storage block 丨2〇6 before the first timeout period is reached. . Figure 14B shows that the remainder of the garbage collection operation can be completed in a second timeout period. A second write command is received after receiving the first write command. Therefore, a second timeout period is assigned to the second write command. 124728.doc -33- 200821829 During this second timeout period, the remaining valid data is copied from the original block D 1302 and the messy update block 1) 13〇4 to the new block D 13〇8. Here, all remaining valid data (or the last portion of the valid data) may be copied to the new block D 13〇8 during the second garbage collection time period 1314. Therefore, the garbage collection operation can be completed in the second timeout period. Since the garbage collection operation is completed within this second timeout period, the original block D 1302 and the messy update block D 13〇4 can be erased and made available for storing additional data. After erasing the original block D 1302 and the messy update block 八13〇4, the new update block E 1316 is allocated and the new data 13 14 received from the second write command is written to the newly allocated update block E. . In addition, new data 1314 is not written to staging block 1206 because an update block is available after the garbage collection operation is completed and the new data needs to be buffered until a subsequent timeout period. In this example, the new material 1312 stored in the temporary storage block 12〇6 is copied to the update block E 1316, assuming that the new data lsl2&ni4 belong to the same logical group. Audio/Video Data Access to one of the audio/visual files associated with a non-volatile memory storage system (hereinafter referred to as "audio/video data") when compared to other data A predetermined rate is required to write the audio/video data. As the host computer causes the audio/video data to flow into or out of the non-volatile memory storage system, the bandwidth assigned to the data stream matches or exceeds the predetermined rate. The garbage collection operation performed during the access of the audio/video data can reduce the writeability month b of the audio/video data. Therefore, in a specific embodiment, when the multiple 124728.doc -34-200821829 sector write command is not associated with the voice/video data or the multi-session write command is at the beginning of an audio/video write Perform phased garbage collection.

U To distinguish audio/video data from other data, in one embodiment, the non-volatile memory storage system can reference a target logical address associated with the multi-session write command. Since the audio/video data is written in sequence, a target logical address that is converted to a backward step can indicate that the new data is not audio/video data (or the beginning of the audio/video data). In another embodiment, the non-volatile memory storage system can also distinguish audio/video data from other data by reference to the number of segments associated with the new data. The audio/video data can be stored in a unit called a recording unit. The minimum recording unit length associated with the audio/video material can be 32 segments. The number of segments associated with the new data that are not integer multiples of 32 segments may therefore indicate that the new material is not audio/video material. New information that is not aligned with the Recording Authority or that is not initiated at the beginning of the Recording Unit may also indicate that the new data is not a voice/video material. Therefore, phased garbage collection may be performed if the following conditions apply: (1) a multi-session write command invokes a garbage collection operation; (2) converts the target logical address into a backward jump; (3) the target logical address is not aligned with a record unit boundary; and (4) is receiving After the command is stopped (ie, the multisession write command ends) '^ The number of sections associated with the new material is not an integer multiple of Μ. Figure 15 is a flow diagram of the operation of a non-volatile memory storage system associated with a write command 124728.doc -35 - 200821829 in accordance with an embodiment of the present invention. The write command can be a single segment write command in which new data is written as a single segment to a random address across a memory cell array. Based on host activity and card segmentation, the host can write long-lived scenarios with multiple segments to random locations using a single segment write command. Because a limited number of update blocks are allocated, these single-segment writes can quickly go through the update block, and the non-volatile memory storage system can be prompted to perform a garbage collection operation to clean up the block for use. For subsequent write operations. The write command can also be a multi-segment write command. Most of the new data systems written to the memory cell array occupy a larger data file of the adjacent sequence logical address space. The host is hosted according to host activity. A multi-session write command can be used to write a larger data file. Such new data includes a new data with multiple timeout periods. Figure 7 shows an example of a multi-session write command. In general, because multiple timeout periods are available for multi-session write commands, new data can be written to the allocated update block instead of the scratch block. Therefore, the cache block is usually not used. Part of a phased garbage collection scheme in a multisession writer command, because garbage collection can usually be done in multiple timeout periods assigned to the multisession write command. • As shown in Figure 15, A write command is received in operation 1402. It is then determined in operation 1403 whether the write command is a single segment write command. If the write command is a single segment write command, then in operation 14〇4 Decision form - section write Whether the inbound command invokes the garbage collection operation. If the single segment write command does not invoke the garbage collection operation, then in operation 1422, the new memory: the memory. On the other hand, if the write command invokes the garbage collection operation, 124728.doc -36- 200821829 In operation 1408, it is additionally determined whether the one-stage garbage collection is pending (ie, it has been started, but it is staged because the garbage collection cannot be completed or if the staged garbage collection block is not empty) Garbage collection operation. If there is an unresolved phased garbage collection, continue or perform a phased garbage collection operation in operation 141. In other words, continue from the remainder of the previous garbage collection operation. As shown in operation 1411, execute Stage garbage collection operations until the garbage collection time period (for example, the difference between the timeout period and the stylized time) or until the staged garbage collection operation is completed.

U Right can complete the staged garbage collection operation during the garbage collection time period. Then, in operation 1412, it is additionally determined whether the garbage collection operation is still called even after the stage garbage collection operation is completed. If the write command is not a garbage collection operation, then new data is written to the memory in operation 1422. On the other hand, if the write command does call the garbage collection, the garbage collection operation is performed at operation 1414 until the garbage collection time period is reached in operation (4) 8 or until the stage garbage collection is completed. In a specific embodiment, if a staged garbage collection block is used, the above equation can be relied upon as the garbage collection time period. If it is not possible to complete the garbage collection operation within the garbage collection time period, it can be written in operation 14: - of the phased garbage collection blocks. Using the temporary storage block on the other side, the above-described equation 2·〇 can be used as the garbage collection garbage collection time period in operation 1418. If it is not possible to complete the garbage collection during the garbage collection time period, you can write the new shell to the temporary block in operation 1420. Into the garbage # I Complete the garbage collection operation during the garbage collection time period, then write the new data into the record in 1422.doc • 37 - 200821829 Recall. It should be noted that if there is a staged garbage collection and the current write command also invokes the garbage collection operation, the garbage collection time period shown in operation 1418 is a continuation of the garbage collection time period in operation 1410. Therefore, if there is a staged garbage collection and the current single-segment write command invokes the garbage collection operation, then two operations are completed during the total garbage collection time period. In other words, the execution time allocated for the staged garbage collection operation is displayed in operation 14 18, and the garbage collection operation shown in operation 1410 may be, for example, the difference between the timeout period and the stylized time. After the new data is written to the memory in operation 1422, in operation 1424, the new > material is an integer multiple of 32 segments. If the new data is an integer multiple of 32 segments, the new data can be associated with the audio/video material and operate. However, if the new data is not an integer multiple of 32 segments, then in operation 1426, it is determined whether or not the garbage collection is pending. If there is an unresolved phased garbage collection, then in operation 428, the phase 11 garbage collection operation is continued or completed. If there is no pending phased garbage collection, the operation ends. Returning to operation 1402, a multi-session write command can also be received. A multi-session write command is used to store (or buffer) segments of the new data and the garbage collection operation can be performed in operation 1452 if needed. The non-swinging I* body storage system may not utilize a temporary storage block or a one-stage garbage collection block to store new data in a staged garbage collection operation because multiple timeout periods are assigned to the A multi-session write command and typically a garbage collection operation can be completed at the end of the multi-session write command. Therefore, 124728.doc -38- 200821829 In addition to the temporary storage block, the non-volatile - 丨 丨 丨 丨 储存 储存 储存 储存 储存 储存 储存 储存 储存 储存 储存 储存 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨 丨The ram' associated with the hidden storage system or, in other memory associated with the non-volatile memory storage system, simultaneously announces a busy signal between the segments of the new data to perform the garbage using the allocated timeout period Collect operations. ^ And in the specific embodiment, if a sufficient timeout period is not allocated to complete the garbage collection operation, then the temporary storage block can be used for a multi-session write life.

make. Here, it may be determined in operation 1454 whether to receive less than N zones of new data. A multi-session write command with at least n segments of new data can be written directly to the update blocks instead of the temporary block. Here, _ is defined as Ν'

RoundDownt〇tNearest .Integer

Tgc + TO· ~~TO~ (3.0)

Where TO is the timeout period and Tge is used to perform the time period of the complete garbage collection operation. Such multi-segment write commands can be written directly to the new block instead of the scratch block. Equation 3.0 shows that when the write command is a single-segment write command or when the non-volatile memory storage system receives less than the new data in the multi-region slave write 叩7, the new Data is written to the staging block as part of a phased garbage collection plan. If less than N segments are received, the non-volatile memory storage system operates the multi-session write command in accordance with a single-segment write command operation initiated in operation 14G4. However, if multiple segments of the new data are received, then in operation 1456 it is possible to perform a phased garbage collection operation. If the stage garbage collection operation cannot be performed, new data is written to the memory in operation 1422. Alternatively, if a phased garbage collection operation 124728.doc -39-200821829 can be performed, a phased garbage collection operation is performed in operation 1422 until (for example) one of the time periods of TgC-Tprog. New data is written to the memory in operation 1422 after the staged garbage collection operation. The specific embodiments described above provide methods and/or systems for staged garbage collection. The garbage collection operation can be divided into phases and multiple phases can be executed in multiple timeout periods. In the staged garbage collection, new data received from the 痃 write command can be stored in a stage garbage collection block or a temporary storage block. By splitting the garbage collection operation, each phase of the garbage collection operation can be performed during the timeout period, and thus the timeout error is prevented. The foregoing specific embodiments have been described in some detail, and are not limited to the details provided. There are many alternative ways of implementing these specific embodiments. Therefore, the specific embodiments are not to be construed as limiting, and the details are not limited to the details provided herein. Make modifications within the object. In the context of the patent application, the elements and/or operations do not imply any specific order of operation unless explicitly stated in the scope of the claims. BRIEF DESCRIPTION OF THE DRAWINGS The invention will be readily understood by the above detailed description and the drawings, and the same reference numerals 1 is a simplified block diagram of an example of a non-volatile memory storage system in accordance with an embodiment of the present invention. Figure 2 is a simplified block diagram of the organization of the memory cell array in a plane 124728.doc -40- 200821829. Figure 3 is a simplified block diagram of a page of memory cells. Figure 4 is a simplified block diagram of a section of a memory cell. Figure 5 is a simplified block diagram of a logical interface between a host and a non-volatile memory storage system. Figure 6 is a flow diagram of a general overview of the operation of a staged garbage collection in accordance with an embodiment of the present invention. Figure 7 shows a simplified block diagram of one example of a garbage collection operation divided into sections in accordance with an embodiment of the present invention. Figure 8 is a flow diagram showing the detailed operation of performing a staged garbage collection using a staged garbage collection block as a buffer in accordance with an embodiment of the present invention. Figures 9A and 9B are simplified block diagrams of memory blocks in accordance with an embodiment of the present invention, wherein the sequence update blocks are garbage collected in a stage. 10A and 10B are simplified block diagrams of memory blocks in accordance with an embodiment of the present invention, wherein garbage collection is performed on the messy update blocks in the stage. 11A, 11B, 11C, 11D, and 11E are simplified block diagrams of memory blocks in accordance with another embodiment of the present invention in which garbage collection blocks are garbage collected in stages. Figure 12 is a flow diagram showing the detailed operation of performing a staged garbage collection using a temporary storage block as a buffer in accordance with an embodiment of the present invention. 13A and 13B are simplified block diagrams of a memory block 124728.doc-41 - 200821829 in accordance with an embodiment of the present invention, wherein garbage collection is performed on the sequence update block in the accompanying φ 社 丨 + 。 。. Figure 14 is a simplified block diagram of a memory block in accordance with the present invention in accordance with the present invention, wherein the messy blocks are garbage collected in the stage. Figure 15 is a flow diagram of the operation of a non-volatile memory storage system associated with a write command in accordance with an embodiment of the present invention. [Main component symbol description] ϋ 124728.doc 102 Non-volatile memory storage system 104 Host interface 108 Memory interface 110 Memory controller 112 RAM 114 ECC circuit 116 ROM 118 Memory 120 Array logic 122 Non-volatile memory unit歹|J 123 Memory Cell Array 124 Busbar 126 System Bus 202-205 Plane 210-213 Block 220-223 Block 401 Page ioc -42- 200821829 η

402 Section 404 Section 405 Management Profile 406 Data 502 Memory Cell Array 512 Logical Address Space 702 Busy Signal 704 Multi-Segment Write Command 706 Stop Command 760-762 New Data 780 Part 1 781 Part 2 902 Original Block A 904 Sequence Update Block A 905 Existing Data 908 Staged Garbage Collection Block A 908 Staged Garbage Collection Block C 910 New Data 914 New Original Block A 916 Update Block B 918 New Data 1001 New Data 1002 Original Block A 1004 Clutter update block A 124728.doc -43 - 200821829 1005 New data 1006 New block A 1008 Staged garbage collection block A 1010 New original block A 1012 Update block B ^ 1014 Staged garbage collection block C. 1202 Original block A 1204 Sequence update block A f : 1205 Existing data 1206 Temporary block 1210 New tribute 1212 New original block A 1222 New data 1222 Update block C 1224 New data 1302 Original block D ϋ 1304 Messy Update Block D 1308 New Block D ' 1312 New Data, 1314 New Data 1316 New Update Block E 2002 Original Block G 2004 Miscellaneous The new update block G 2006 block of G 124728.doc -44- 200821829 2008 2010 2012 2016 2018 2020. 2022 2202 O '2204 2206 2212 2214 P0-P7

New block G Stage garbage collection block G New data New original block G Update block 阶段 Stage garbage collection block J New data original block 杂 Messy update block Κ New block 阶段 Stage garbage collection block Μ New Information page υ 124728.doc -45-

Claims (1)

200821829 X. Applying for patents: 1. A method for operating a memory system, comprising: receiving a - write-write command to write a first write command to obtain a plurality of materials, the first execution; During the collection period, the first part will be copied from one of the seven eves and one of the several valid materials will be copied to the second block; the first plurality will be included in the second block; The garbage collection area releases the busy signal before the timeout period. Staged garbage or a plurality of first methods, such as the method of claim 1, further comprising converting the first collection block into an update block. 3. The method of claim 1, further comprising erasing the block. U 4. The method of claim i, wherein the one or more _blocks, the second block, and the third block are configured to span-single-logical groups. For example, the method of claim 1 wherein the copying the plurality of valid materials from the one or more first blocks comprises: tracking the portion of the plurality of valid data from the one or more first The block is copied to one of the second blocks; and the portion of the plurality of valid data is copied before the time exceeds the garbage collection time period. 6. The method of the requester, wherein the first write command is a single-segment 124728.doc 200821829 write command. 7. The method of claim 1, wherein the garbage collection time period is a difference between the timeout period and a stylized time associated with writing the first plurality of materials. 8. The method of claim 1, further comprising assigning a second stage garbage collection block configured to store a second plurality of data from a second write command to receive the first write The second write command is received after the command is entered. 9. A method for operating a memory system, comprising: receiving a first write command to write a first plurality of data, the first write command being assigned a first timeout period to complete the Executing a first write command; declaring a first busy signal; copying the first portion of the plurality of valid data from one or more first blocks to a second block during a garbage collection time period; Writing a first plurality of data to a third block; releasing the first busy signal before the first timeout period; 'receiving a second write command to receive a write command to write the first Receiving the second write command after receiving the first write command, the input command is assigned a second timeout period to complete the second execution; declaring a second busy signal; at the garbage collection time Copying the outer two parts of the plurality of valid data from the one or more first blocks to the second block in the period 124728.doc 200821829 converting the third block into a first update block ; win the first plural of λ The data is written to the first update block; and the second busy signal is released before the 4 second timeout period. 1 0 · § 青 项 9 夕 、 万 万 万 其 其 其 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 u. The method of claim 9, the further comprising: assigning a fourth block; and writing the second plurality of data to the fourth block. 12 · If the request items 1 and /, /, further include copying a plurality of valid shares from the or five brothers to the younger block during a remaining garbage collection time period. The method of claim 12, wherein the complex number=data is copied from the one or more fifth blocks to the sixth block during the second timeout period. 14·If you want to solve the problem of item 9, Α中哕篝篦 Eight 肀 first and second two write command system is a single segment write command.货早 C 15. A method for operating a memory system, comprising: a receive-write command to write a plurality of data, the write command being able to complete the write command with a timeout period Executing a busy signal; copying a plurality of valid octencies from one or more first blocks to a second block during a garbage collection time period; writing the plurality of data to a temporary storage block And release the busy signal before the timeout period. 16. The method of claim 15, wherein the write life is a write to the 124728.doc 200821829 command. 17. The method of claim 15, wherein the copying the portion of the plurality of valid materials comprises: ^ tracking for copying the portion of the plurality of valid data from the one or more first blocks to the a time of one of the second blocks; and stopping the portion of the plurality of valid data before the time exceeds the garbage collection time period. Take The method of item 18, wherein the garbage collection time period is a difference between the timeout period and a one associated with the plurality of materials written. Between time, 19, a method for operating a memory system, comprising: receiving a write command to write a first plurality of data, a write command is allocated - a - time period To complete the execution of the z-th order; to declare a first busy signal; to copy a portion of the plurality of valid data from one or more first blocks to a second during a garbage collection time period Blocking, the first plurality of data is written into a temporary storage block; the first busy signal is released before a timeout period; 'the second write write command is received at the second receive command Receiving the second write command after writing the second plurality of data to receive the first write command, the input command is assigned a second timeout period to complete the second execution; and declaring a second busy signal; 124728 .doc -4- 200821829 copying the second portion of one of the plurality of valid data from the one or more first blocks to the second block during the garbage collection time period; and during the second time period The second busy signal is released before. 20. The method of claim 19, wherein the method comprises writing the second plurality of data to the temporary storage block. 21. If the method of claim 19 is entered, it is divided into two, and the second plurality of data of 5 hai is written into an update block. 22. The method of claim 19, further comprising erasing the one or more first blocks after the copying the second portion of the plurality of valid data. 23. The method of claim 22, wherein if the second portion of the plurality of valid data is one of the plurality of valid materials, the one of the plurality of valid data is hanged, the one or more first Block. 24) The method of claim 19, further comprising: allocating an update block; and copying the first plurality of data from the smart card store block to the update block 0 25. The method of claim 19 is a sector write command. The first and second write commands are a non-volatile memory storage system, comprising: a memory configured to store-storage system; a non-volatile An array of memory cells; and processing as 'communicating with the memory and the non-volatile memory cell array, the processor configured to execute the storage system moving in the memory, the storage system The program includes a program instruction, which uses 124728.doc 200821829 to: receive a write command to write a plurality of data into the non-volatile memory unit array, announce a busy signal, and generate a plurality of valid data in a garbage collection time period. One of the ten minutes is copied from one or more first blocks to a second block, and the plurality of pieces of data are written into a third block, The third block is converted to an update block and the busy signal is released before a timeout period. 27. The non-volatile memory storage system of claim 26, further comprising erasing the one or more first blocks. The third zone 28. The non-volatile memory storage system block of claim 26 is configured to span a single logical group. 29. The non-volatile memory storage system of claim 26, wherein the copying the plurality of valid data from the first and second blocks comprises: wiping the portion of the plurality of valid data from the The one or more first blocks are copied to one of the second blocks; and the portion of the plurality of valid data is stopped before the garbage collection time period. Wherein the third zone 3〇. The non-volatile memory storage system block of claim 26 is a one-stage garbage collection block. 31_ The time period of the non-volatile memory storage set of claim 26 is the time-out period fish: ',,, between the stylized time of the garbage collection--the difference is related to the number of data. 124728. Doc 200821829 32. A non-volatile memory storage system comprising: a read only memory (ROM) configured to store _ firmware; a uniform non-volatile memory cell array; and a a processor that is in communication with the R〇M, the memory cell array, and the volatile memory cell array, the processor configured to store a system _, the storage system _包 c β 挥; a write command to write the first plurality of data to the non-X:-body array, the first-writer command is assigned a 苐-timeout period to complete the execution of the first write command, proclaiming a first a busy signal, in the garbage collection time period, copying a plurality of valid parts from - or a plurality of first blocks to - a second block, and writing the first plurality of data to a third block, in the Release the first busy before a timeout period Writing a second write command to write the second plurality of materials into the non-volatile I memory cell array, and receiving the second write command after the receiving, the second write command 4:::: : the timeout period is completed to complete the execution of the second write command, and the second busy signal is copied from the one or more first blocks to the garbage collection time period. The third block is converted into a --update block, ° 124728.doc 200821829, the second plurality of data is written into the first update block, and before the second timeout period The second busy signal is released. 33. The non-volatile memory storage system of claim 32, wherein the storage system firmware further comprises program instructions to erase the one or more first blocks. The non-volatile memory storage system of claim 32, wherein the storage system firmware further comprises program instructions for 'allocating a fourth block; Writing the second plurality of data into the fourth block. 35. The non-volatile memory storage system of claim 34, wherein the firmware further comprises a program instruction, and the 9^ device is used to skew the plurality of valid resources during a remaining garbage collection time period. One or more fifth blocks of β Huaibei are copied to a sixth block. 3 6 · The non-volatile grammar of claim 3 is stored in the c U basket storage system, wherein the plurality of valid data are from the fifth block in the second time period Copy to the sixth block. 37. The non-volatile memory storage system of claim 32, wherein the first and second write commands are single-segment write commands. 38. A non-volatile memory storage system, comprising: a memory configured to be stored in a storage system firmware; a non-volatile memory unit array; and a processor It communicates with the memory version and the non-volatile memory unit array, and the processor is configured to perform the 4 storage system firmware stored in the memory, the storage system The body includes a program instruction, which uses 124728.doc 200821829 to: Write a command to write a plurality of data to the non-volatile memory unit array, announce a busy signal, and call a garbage collection during the garbage collection time period. In operation, part of writing the plurality of data into a temporary storage block and releasing the busy signal before a timeout period. 3. The non-volatile imprinted hidden object storage system of claim 38, wherein the program instructions for the portion of the garbage collection operation comprise a plurality of program time periods in the city The part of the valid data is copied from the first block of the first or the first block to the program of the first one of the first block. 40. The non-volatile memory of claim 39, the first program instruction for copying the plurality of valid data, the following operation: the character is used for Kj tracking to Copying, by the plurality of the first block, the time from the one or more first blocks to the time of the first _R 一 一 &█ and at the time exceeding the garbage collection time period, the number of valid This part of the information. The remote copying of the non-volatile memory storage system of claim 38 causes a single segment write command.八中4写印42. As in claim 38, the non-volatile memory material _, the set time period is associated with the _ difference between the time period and the stylized time of the writer's garbage collection 124728 .doc 200821829 43 - A non-volatile memory storage system comprising: a read only memory (ROM) configured to store a storage system firmware; a memory cell array configured And a processor that communicates with the R〇M, the memory cell array, and the non-volatile memory cell array, the processor is grouped The state is used to execute the memory system stored in the "Her ROM", the storage system blade includes a program command for: receiving - first-write command to write the first plurality of data to the non- F-memory memory single-column, the m command can be assigned - the first-timeout period to complete the execution of the first __ writer command, declare a first busy signal, and multiple valid during the garbage collection time period The first part of the information from - Or the plurality of first blocks are copied to a second block, U writes the first plurality of data into a temporary storage block, and the first busy green signal is released before the timeout period, a second write command to write the second plurality of data to the non-volatile memory unit, and after receiving the first write command, the second write command Allocating a ::: time period to complete the execution of the second write command, σ σ a second busy signal, in the garbage collection η birthday day, m second part from the plurality of valid data - The first block is copied to the second block, 124728.doc 200821829 and the second busy signal is released before the second timeout period. 44. The non-volatile memory storage system of claim 43, wherein the storage firmware further comprises program instructions to write the second plurality of data to the block. *45. The non-volatile memory storage system of claim 43, wherein the storage firmware further comprises program instructions for updating the second plurality of data sub- and sentence-update blocks. 46. The non-volatile memory storage system of claim 43, wherein the storage firmware further comprises means for erasing the one or more first regions after the copying the plurality of valid data: ^ the second portion Block program instructions. The non-volatile memory storage system of claim 46, wherein if the second portion of the plurality of valid data is one of the plurality of valid data = / portion, erasing the one or more first Block. 48. The non-volatile memory storage system of claim 43, wherein the storage system firmware further comprises program instructions for: ^ allocating an update block; and the first plurality of data from the temporary storage area The system is copied to the update block in blocks. 49. The non-volatile memory storage system of claim 43, wherein the first and second write commands are a single segment write command. 124728.doc -11 -