WO2008041138A3 - Dispositif optoélectronique et procédé de réalisation correspondant - Google Patents

Dispositif optoélectronique et procédé de réalisation correspondant Download PDF

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Publication number
WO2008041138A3
WO2008041138A3 PCT/IB2007/004283 IB2007004283W WO2008041138A3 WO 2008041138 A3 WO2008041138 A3 WO 2008041138A3 IB 2007004283 W IB2007004283 W IB 2007004283W WO 2008041138 A3 WO2008041138 A3 WO 2008041138A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
wavelength
stabilized
emitting device
interference
Prior art date
Application number
PCT/IB2007/004283
Other languages
English (en)
Other versions
WO2008041138A2 (fr
Inventor
Vitaly Shchukin
Nikolai Ledentsov
Original Assignee
Vitaly Shchukin
Nikolai Ledentsov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/453,980 external-priority patent/US7421001B2/en
Priority claimed from US11/648,551 external-priority patent/US7583712B2/en
Application filed by Vitaly Shchukin, Nikolai Ledentsov filed Critical Vitaly Shchukin
Priority to EP07859320A priority Critical patent/EP2036172A2/fr
Priority to CN200780022437.3A priority patent/CN101496238B/zh
Priority to JP2009514936A priority patent/JP5374772B2/ja
Publication of WO2008041138A2 publication Critical patent/WO2008041138A2/fr
Publication of WO2008041138A3 publication Critical patent/WO2008041138A3/fr
Priority to US12/200,127 priority patent/US7949031B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H01S5/1035—Forward coupled structures [DFC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1092—Multi-wavelength lasing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Cette invention concerne un dispositif électroluminescent conçu pour émettre de la lumière depuis la surface dans un domaine spectral large et dans une large gamme d'angles inclinés par rapport à la direction normale de la surface de sortie. Cette invention concerne également un appareil conçu pour générer une lumière stabilisée en longueurs d'onde, lequel appareil est constitué d'un dispositif électroluminescent, d'une cavité externe et d'au moins un miroir externe. La lumière émise par le dispositif électroluminescent à un certain angle présélectionné, se propage à travers la cavité externe, frappe le miroir externe puis est réfléchie. L'interférence peut être constructive ou destructrice. Les interférences constructives permettent d'obtenir une rétroaction positive. Les conditions d'une rétroaction positive sont réunies à une longueur d'onde choisie ou à quelques longueurs d'onde choisies dans le spectre de luminescence de la zone active. Ensuite, l'appareil génère une lumière stabilisée en longueurs d'onde. Un appareil peut être utilisé en tant que diode électroluminescente stabilisée en longueurs d'onde, en tant que diode superluminescente stabilisée en longueurs d'onde, ou en tant que laser stabilisé en longueurs d'onde, ou en tant qu'appareil pour la conversion de fréquence.
PCT/IB2007/004283 2006-06-16 2007-06-06 Dispositif optoélectronique et procédé de réalisation correspondant WO2008041138A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP07859320A EP2036172A2 (fr) 2006-06-16 2007-06-06 Dispositif optoélectronique et procédé de réalisation correspondant
CN200780022437.3A CN101496238B (zh) 2006-06-16 2007-06-06 具有倾斜波传播的耦合腔ld
JP2009514936A JP5374772B2 (ja) 2006-06-16 2007-06-06 光電子デバイスおよびその製造方法
US12/200,127 US7949031B2 (en) 2006-06-16 2008-08-28 Optoelectronic systems providing high-power high-brightness laser light based on field coupled arrays, bars and stacks of semicondutor diode lasers

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US81405306P 2006-06-16 2006-06-16
US11/453,980 2006-06-16
US60/814,053 2006-06-16
US11/453,980 US7421001B2 (en) 2006-06-16 2006-06-16 External cavity optoelectronic device
US11/648,551 2007-01-03
US11/648,551 US7583712B2 (en) 2006-06-16 2007-01-03 Optoelectronic device and method of making same

Publications (2)

Publication Number Publication Date
WO2008041138A2 WO2008041138A2 (fr) 2008-04-10
WO2008041138A3 true WO2008041138A3 (fr) 2008-07-31

Family

ID=39268863

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2007/004283 WO2008041138A2 (fr) 2006-06-16 2007-06-06 Dispositif optoélectronique et procédé de réalisation correspondant

Country Status (3)

Country Link
EP (1) EP2036172A2 (fr)
JP (1) JP5374772B2 (fr)
WO (1) WO2008041138A2 (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7949031B2 (en) * 2006-06-16 2011-05-24 Pbc Lasers Gmbh Optoelectronic systems providing high-power high-brightness laser light based on field coupled arrays, bars and stacks of semicondutor diode lasers
US7580595B1 (en) 2008-05-09 2009-08-25 Technische Universitaet Berlin Data transmission optoelectric device
WO2010060998A2 (fr) * 2008-11-28 2010-06-03 Pbc Lasers Gmbh Procédé d'amélioration de la qualité du faisceau et de fonctionnement stabilisé en longueurs d'onde d'une diode laser à semi-conducteurs avec un guide d'onde étendu
KR20140046419A (ko) * 2011-05-16 2014-04-18 베르라세 테크놀러지스 엘엘씨 공진기가 향상된 광전자 장치 및 그 제조 방법
JP5731996B2 (ja) * 2012-02-21 2015-06-10 富士フイルム株式会社 半導体発光素子
JP5777164B2 (ja) * 2012-08-24 2015-09-09 日本電信電話株式会社 分散補償器
US9295855B2 (en) 2013-03-15 2016-03-29 Gary W. Jones Ambient spectrum light conversion device
US9551468B2 (en) 2013-12-10 2017-01-24 Gary W. Jones Inverse visible spectrum light and broad spectrum light source for enhanced vision
US10288233B2 (en) 2013-12-10 2019-05-14 Gary W. Jones Inverse visible spectrum light and broad spectrum light source for enhanced vision
JP6747910B2 (ja) 2016-08-10 2020-08-26 浜松ホトニクス株式会社 発光装置
US11031751B2 (en) 2016-08-10 2021-06-08 Hamamatsu Photonics K.K. Light-emitting device
JP6747922B2 (ja) * 2016-09-07 2020-08-26 浜松ホトニクス株式会社 半導体発光素子及び発光装置
US10734786B2 (en) 2016-09-07 2020-08-04 Hamamatsu Photonics K.K. Semiconductor light emitting element and light emitting device including same
US11637409B2 (en) 2017-03-27 2023-04-25 Hamamatsu Photonics K.K. Semiconductor light-emitting module and control method therefor
US11646546B2 (en) 2017-03-27 2023-05-09 Hamamatsu Photonics K.K. Semiconductor light emitting array with phase modulation regions for generating beam projection patterns
JP6959042B2 (ja) 2017-06-15 2021-11-02 浜松ホトニクス株式会社 発光装置
WO2019111787A1 (fr) 2017-12-08 2019-06-13 浜松ホトニクス株式会社 Dispositif électroluminescent et son procédé de production
JP2021174928A (ja) * 2020-04-28 2021-11-01 住友電気工業株式会社 光学装置
DE102021121115A1 (de) * 2021-08-13 2023-02-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Spiegel für einen laser, laser und laserbauteil

Citations (4)

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Publication number Priority date Publication date Assignee Title
US6243407B1 (en) * 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices
US20030152120A1 (en) * 2002-02-12 2003-08-14 Nikolai Ledentsov Tilted cavity semiconductor laser (TCSL) and method of making same
US20050040410A1 (en) * 2002-02-12 2005-02-24 Nl-Nanosemiconductor Gmbh Tilted cavity semiconductor optoelectronic device and method of making same
US20050078727A1 (en) * 2003-10-09 2005-04-14 Photodigm, Inc. Multi-wavelength grating-outcoupled surface emitting laser system

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2546133B2 (ja) * 1993-04-30 1996-10-23 日本電気株式会社 狭帯域化面発光レーザ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6243407B1 (en) * 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices
US20030152120A1 (en) * 2002-02-12 2003-08-14 Nikolai Ledentsov Tilted cavity semiconductor laser (TCSL) and method of making same
US20050040410A1 (en) * 2002-02-12 2005-02-24 Nl-Nanosemiconductor Gmbh Tilted cavity semiconductor optoelectronic device and method of making same
US20050078727A1 (en) * 2003-10-09 2005-04-14 Photodigm, Inc. Multi-wavelength grating-outcoupled surface emitting laser system

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2036172A2 *

Also Published As

Publication number Publication date
JP2009540593A (ja) 2009-11-19
WO2008041138A2 (fr) 2008-04-10
JP5374772B2 (ja) 2013-12-25
EP2036172A2 (fr) 2009-03-18

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