WO2008031287A1 - Cavité de pompage pour module de pompage latéral à semi-conducteur - Google Patents

Cavité de pompage pour module de pompage latéral à semi-conducteur Download PDF

Info

Publication number
WO2008031287A1
WO2008031287A1 PCT/CN2006/002819 CN2006002819W WO2008031287A1 WO 2008031287 A1 WO2008031287 A1 WO 2008031287A1 CN 2006002819 W CN2006002819 W CN 2006002819W WO 2008031287 A1 WO2008031287 A1 WO 2008031287A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat sink
pumping chamber
semiconductor side
pump module
side pump
Prior art date
Application number
PCT/CN2006/002819
Other languages
English (en)
Chinese (zh)
Inventor
Yunfeng Gao
Gang Xiao
Gang Pu
Jianfei Chen
Yanqing Yang
Original Assignee
Shenzhen Han's Laser Technology Co., Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Han's Laser Technology Co., Limited filed Critical Shenzhen Han's Laser Technology Co., Limited
Publication of WO2008031287A1 publication Critical patent/WO2008031287A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/042—Arrangements for thermal management for solid state lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/061—Crystal lasers or glass lasers with elliptical or circular cross-section and elongated shape, e.g. rod
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode

Definitions

  • the present invention relates to a pumping chamber using a single-core high power laser diode as a pumping source, and more particularly to a pumping chamber suitable for a semiconductor side pumping module. Background technique
  • the side pump module is commonly used as a pump source for a semiconductor high power laser diode array (LDA).
  • LDA semiconductor high power laser diode array
  • the LDA structure mostly integrates multiple bars on a heat sink, and the bar and the bar are connected in series. Each of the bars is integrated by a plurality of single core segments.
  • This LDA has a complex structure with poor heat dissipation, low yield, and short life. If one of the cores in the array is damaged, the entire LDA will be scrapped.
  • Single-core high-power laser diode Single Emitter, hereinafter referred to as single-core tube
  • Single-core tube has the advantages of simple structure and long service life (currently, the service life of single-core tube is generally more than 200,000 hours, while the service life of general LDA is 10,000.
  • the technical problem to be solved by the present invention is to provide a pump cavity suitable for a semiconductor side pump module and a single core high power laser diode, which has the advantages of compact structure, long service life, convenient maintenance and modularization.
  • Figure lb is a perspective view of a dislocation arrangement of the movable body of the present invention.
  • Figure 1 is a cross-sectional view of another embodiment of the present invention.
  • a pumping chamber for a semiconductor side pump module includes: a heat sink body 1, a movable body 3, and a single core joint 4.
  • the heat sink body 1 is made of a highly thermally conductive, easily processable metal. As shown in Figures la, 2, and 3, the heat sink body 1 includes a heat sink block 7 and an internally processed cooling passage 2, and the heat sink block 7 is located in the heat. Between the two end portions 8 of the sink body 1, the outer end faces of the both end portions 8 have a regular equilateral polygon, and a circular hole is formed in the center of the polygon, and a laser crystal and a cooling channel serving as a laser crystal are reserved.
  • the inner wall can be formed into a high reverse surface by ultra-fine processing, sputtering, evaporation or electroplating, and the pumping chamber 9 is in the high reverse side.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Une cavité de pompage pour module de pompage latéral à semi-conducteur comprend un corps de dissipateur thermique (1), une pluralité de corps mobiles (3) et une pluralité de mono-émetteurs (4). Le corps de dissipateur thermique (1) comprend des pièces de dissipateur thermique (7) et un orifice central, ces pièces de dissipateur thermique (7) étant disposées uniformément autour du centre du corps de dissipateur thermique (1). Les corps mobiles (3) sont montés mobiles sur les pièces de dissipateur thermique (7) et les mono-émetteurs (4) sont montés sur ces corps mobiles (3). Un cristal laser peut être placé dans l'orifice central du corps de dissipateur thermique (1).
PCT/CN2006/002819 2006-09-11 2006-10-23 Cavité de pompage pour module de pompage latéral à semi-conducteur WO2008031287A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200610062537A CN101145670B (zh) 2006-09-11 2006-09-11 一种用于半导体侧面泵浦模块的泵浦腔
CN200610062537.6 2006-09-11

Publications (1)

Publication Number Publication Date
WO2008031287A1 true WO2008031287A1 (fr) 2008-03-20

Family

ID=39183368

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2006/002819 WO2008031287A1 (fr) 2006-09-11 2006-10-23 Cavité de pompage pour module de pompage latéral à semi-conducteur

Country Status (2)

Country Link
CN (1) CN101145670B (fr)
WO (1) WO2008031287A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160204563A1 (en) * 2013-09-23 2016-07-14 Academy Of Opto-Electronics, Chinese Academy Of Science Large aperture uniform-amplification laser module
CN117559226A (zh) * 2024-01-12 2024-02-13 北京凯普林光电科技股份有限公司 一种环状半导体激光器

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101964496B (zh) * 2010-09-27 2012-04-18 苏州光格设备有限公司 大功率激光二极管水平线阵泵浦固体激光腔
CN102522694A (zh) * 2011-12-12 2012-06-27 烟台睿创微纳技术有限公司 一种高功率半导体激光器阵列线性光源装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316554A (ja) * 1995-05-15 1996-11-29 Toshiba Corp 固体レ−ザ装置
JPH1022551A (ja) * 1996-07-02 1998-01-23 Mitsubishi Electric Corp 固体レーザ励起モジュール
US5778020A (en) * 1996-06-04 1998-07-07 Cj Laser, Inc. ND: YAG laser pump head
JPH10341051A (ja) * 1997-06-06 1998-12-22 Toshiba Corp 固体レーザ装置
CN1694320A (zh) * 2005-05-26 2005-11-09 上海致凯捷激光科技有限公司 半导体泵浦的单模绿光激光器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316554A (ja) * 1995-05-15 1996-11-29 Toshiba Corp 固体レ−ザ装置
US5778020A (en) * 1996-06-04 1998-07-07 Cj Laser, Inc. ND: YAG laser pump head
JPH1022551A (ja) * 1996-07-02 1998-01-23 Mitsubishi Electric Corp 固体レーザ励起モジュール
JPH10341051A (ja) * 1997-06-06 1998-12-22 Toshiba Corp 固体レーザ装置
CN1694320A (zh) * 2005-05-26 2005-11-09 上海致凯捷激光科技有限公司 半导体泵浦的单模绿光激光器

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160204563A1 (en) * 2013-09-23 2016-07-14 Academy Of Opto-Electronics, Chinese Academy Of Science Large aperture uniform-amplification laser module
US9559481B2 (en) * 2013-09-23 2017-01-31 Academy Of Opto-Electronics, Chinese Academy Of Science Large aperture uniform-amplification laser module
CN117559226A (zh) * 2024-01-12 2024-02-13 北京凯普林光电科技股份有限公司 一种环状半导体激光器
CN117559226B (zh) * 2024-01-12 2024-04-23 北京凯普林光电科技股份有限公司 一种环状半导体激光器

Also Published As

Publication number Publication date
CN101145670B (zh) 2010-05-12
CN101145670A (zh) 2008-03-19

Similar Documents

Publication Publication Date Title
US5084886A (en) Side-pumped laser system with independent heat controls
US5140607A (en) Side-pumped laser with angled diode pumps
US7305016B2 (en) Laser diode package with an internal fluid cooling channel
US5105429A (en) Modular package for cooling a laser diode array
US7795711B2 (en) Microelectronic cooling apparatus and associated method
US7944956B2 (en) Heat sink, laser apparatus provided with such heat sink, and laser stack apparatus
JPH05508265A (ja) 端面発光レーザダイオードのアレーの冷却用薄板パッケージ
US20060227827A1 (en) Semiconductor laser device and heat sink used therein
US7016383B2 (en) Immersion-cooled monolithic laser diode array and method of manufacturing the same
JP4646166B2 (ja) レーザダイオードモジュールからなる光源
US20070291803A1 (en) Active Gas Cooling for Emitter Bars
WO2008031287A1 (fr) Cavité de pompage pour module de pompage latéral à semi-conducteur
JP4690536B2 (ja) レーザダイオードモジュールからなる光源
US20020110165A1 (en) Method and system for cooling at least one laser diode with a cooling fluid
US4805177A (en) Laser construction
JP2004186212A (ja) 半導体レーザーアレイ装置
JP4142099B2 (ja) 冷却レーザダイオードアレイモジュール組立体
US11824324B2 (en) Diode laser arrangement and method for producing a diode laser arrangement
JPH036875A (ja) 半導体レーザ
JP5439688B2 (ja) 光ポンピング構造
CN201450226U (zh) 新型低成本水平阵列液体制冷半导体激光器
JP2011129620A (ja) 半導体装置
JPH04314375A (ja) 半導体レーザ装置
EP2065883B1 (fr) Support de bobine doté d'ailettes de refroidissement
WO2008046257A1 (fr) Cavite de pompage incidente concentrique

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 06805027

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06805027

Country of ref document: EP

Kind code of ref document: A1