WO2008031287A1 - Pumping cavity for semiconductor side pumping module - Google Patents

Pumping cavity for semiconductor side pumping module Download PDF

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Publication number
WO2008031287A1
WO2008031287A1 PCT/CN2006/002819 CN2006002819W WO2008031287A1 WO 2008031287 A1 WO2008031287 A1 WO 2008031287A1 CN 2006002819 W CN2006002819 W CN 2006002819W WO 2008031287 A1 WO2008031287 A1 WO 2008031287A1
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WIPO (PCT)
Prior art keywords
heat sink
pumping chamber
semiconductor side
pump module
side pump
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PCT/CN2006/002819
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French (fr)
Chinese (zh)
Inventor
Yunfeng Gao
Gang Xiao
Gang Pu
Jianfei Chen
Yanqing Yang
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Shenzhen Han's Laser Technology Co., Limited
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Publication of WO2008031287A1 publication Critical patent/WO2008031287A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/042—Arrangements for thermal management for solid state lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H01S3/061—Crystal lasers or glass lasers with elliptical or circular cross-section and elongated shape, e.g. rod
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode

Definitions

  • the present invention relates to a pumping chamber using a single-core high power laser diode as a pumping source, and more particularly to a pumping chamber suitable for a semiconductor side pumping module. Background technique
  • the side pump module is commonly used as a pump source for a semiconductor high power laser diode array (LDA).
  • LDA semiconductor high power laser diode array
  • the LDA structure mostly integrates multiple bars on a heat sink, and the bar and the bar are connected in series. Each of the bars is integrated by a plurality of single core segments.
  • This LDA has a complex structure with poor heat dissipation, low yield, and short life. If one of the cores in the array is damaged, the entire LDA will be scrapped.
  • Single-core high-power laser diode Single Emitter, hereinafter referred to as single-core tube
  • Single-core tube has the advantages of simple structure and long service life (currently, the service life of single-core tube is generally more than 200,000 hours, while the service life of general LDA is 10,000.
  • the technical problem to be solved by the present invention is to provide a pump cavity suitable for a semiconductor side pump module and a single core high power laser diode, which has the advantages of compact structure, long service life, convenient maintenance and modularization.
  • Figure lb is a perspective view of a dislocation arrangement of the movable body of the present invention.
  • Figure 1 is a cross-sectional view of another embodiment of the present invention.
  • a pumping chamber for a semiconductor side pump module includes: a heat sink body 1, a movable body 3, and a single core joint 4.
  • the heat sink body 1 is made of a highly thermally conductive, easily processable metal. As shown in Figures la, 2, and 3, the heat sink body 1 includes a heat sink block 7 and an internally processed cooling passage 2, and the heat sink block 7 is located in the heat. Between the two end portions 8 of the sink body 1, the outer end faces of the both end portions 8 have a regular equilateral polygon, and a circular hole is formed in the center of the polygon, and a laser crystal and a cooling channel serving as a laser crystal are reserved.
  • the inner wall can be formed into a high reverse surface by ultra-fine processing, sputtering, evaporation or electroplating, and the pumping chamber 9 is in the high reverse side.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A pumping cavity for semiconductor side pumping module comprises a heat sink body (1), a plurality of movable bodies (3) and a plurality of single emitters (4). The heat sink body (1) comprises heat sink pieces (7) and a center hole, and the heat sink pieces (7) are uniformly arranged around the center of the heat sink body (1). The movable bodies (3) are movably mounted on the heat sink pieces (7), and the single emitters (4) are mounted on the movable bodies (3). A laser crystal may be placed in the center hole of the heat sink body (1).

Description

一种用于半导体侧面泵浦模块的泵浦腔  Pump cavity for semiconductor side pump module
技术领域 Technical field
本发明涉及一种采用单芯节高功率激光二极管作为泵浦源的泵浦腔， 尤其 是指一种适用于半导体侧面泵浦模块的泵浦腔。 背景技术  The present invention relates to a pumping chamber using a single-core high power laser diode as a pumping source, and more particularly to a pumping chamber suitable for a semiconductor side pumping module. Background technique
目前侧面泵浦模块常用半导体大功率激光二极管阵列 （Laser Diode Array, 以下简称 LDA) 作为泵浦源， LDA结构大多将多个巴条集成在一个热沉 上， 巴条与巴条之间串联连接， 其中的每个巴条又由多个单芯节集成。这种 LDA 结构复杂， 散热差、 成品率低、 寿命短。 如果列阵中一个芯节损坏， 会导致整 个 LDA报废。 单芯节高功率激光二极管 （Single Emitter, 以下简称单芯管） 具有结构简单， 使用寿命长的优点 （目前单芯管的使用寿命一般在 20万小时以 上， 而一般 LDA的使用寿命为 1万小时左右）， 其应用越来越受到重视。 从单芯 节输出功率比较， 单芯管远高过 LDA (目前单芯管输出功率可达到 7W以上， 其 单芯节输出达 8W以上， 而 LDA中单芯节的输出功率一般在 1〜3W之间） 。  At present, the side pump module is commonly used as a pump source for a semiconductor high power laser diode array (LDA). The LDA structure mostly integrates multiple bars on a heat sink, and the bar and the bar are connected in series. Each of the bars is integrated by a plurality of single core segments. This LDA has a complex structure with poor heat dissipation, low yield, and short life. If one of the cores in the array is damaged, the entire LDA will be scrapped. Single-core high-power laser diode (Single Emitter, hereinafter referred to as single-core tube) has the advantages of simple structure and long service life (currently, the service life of single-core tube is generally more than 200,000 hours, while the service life of general LDA is 10,000. About an hour), its application is getting more and more attention. From single core output power comparison, single core tube is much higher than LDA (current single core tube output power can reach more than 7W, its single core output is more than 8W, and the output power of single core in LDA is generally 1~3W Between).
本发明针对 LDA 的缺点， 提出一种采用单芯节高功率激光二极管作为泵浦 源的、 适用于半导体侧面泵浦模块的泵浦腔结构。 发明内容  The present invention is directed to the disadvantages of LDA, and proposes a pump cavity structure suitable for a semiconductor side pump module using a single core high power laser diode as a pump source. Summary of the invention
本发明所欲解决的技术问题在于提供一种适用于半导体侧面泵浦模块、 采 用单芯节高功率激光二极管的泵浦腔， 具有结构紧凑， 使用寿命长， 维修方便、 模块化的优点。  The technical problem to be solved by the present invention is to provide a pump cavity suitable for a semiconductor side pump module and a single core high power laser diode, which has the advantages of compact structure, long service life, convenient maintenance and modularization.
本发明解决上述技术问题所采取的技术方案是： 一种用于半导体侧面泵浦 模块的泵浦腔， 包括热沉本体、 活动体和单芯节， 热沉本体包括热沉块和中心 孔， 热沉块绕热沉本体的中心均布排列， 多个活动体可活动地安装在热沉块上， 单芯节安装在活动体上， 热沉本体的中心孔内可放置激光晶体。  The technical solution adopted by the present invention to solve the above technical problem is: a pumping cavity for a semiconductor side pumping module, comprising a heat sink body, a movable body and a single core body, the heat sink body comprising a heat sink block and a central hole, The heat sink blocks are arranged uniformly around the center of the heat sink body, and the plurality of movable bodies are movably mounted on the heat sink block, and the single core joint is mounted on the movable body, and the laser crystal can be placed in the center hole of the heat sink body.
所述热沉本体的中心孔可以是圆孔， 也可以是多边形孔， 多边形孔边的数 量等于热沉块的数量。  The central hole of the heat sink body may be a circular hole or a polygonal hole, and the number of the polygonal hole sides is equal to the number of the heat sink blocks.
所述泵浦腔即所述中心孔的内部， 中心孔的内面通过超精细加工、 溅射、 蒸发或电镀的方法形成高反面。  The pumping chamber is the inside of the center hole, and the inner surface of the center hole is formed into a high reverse surface by ultrafine processing, sputtering, evaporation or electroplating.
所述泵浦腔位于所述中心孔的内部， 由中心孔内安置一个反射腔形成。 所述每一活动体为左右对称结构， 所述单芯节可左右对称集成在一个活动 体上。 The pumping chamber is located inside the central hole and is formed by a reflecting cavity disposed in the central hole. Each movable body is a left-right symmetric structure, and the single core joint can be symmetrically integrated in one activity Physically.
热沉块的数量等于活动体的列数， 每一热沉块上可以安装一个或多个活动 体。  The number of heat sinks is equal to the number of columns in the moving body, and one or more moving bodies can be installed on each heat sink block.
活动体可分别错位或连续排列在热沉块上。  The movable bodies may be misaligned or continuously arranged on the heat sink block, respectively.
热沉本体上设有冷却介质流通的通道。  The heat sink body is provided with a passage through which the cooling medium flows.
本发明采用上述技术方案所达到的技术效果是： 本发明可以实现单芯节高 功率激光二极管的多极串联， 易实现更大的固体激光输出； 另外， 可以将多个 热沉集成于一个整体上， 在应用于半导体侧面泵浦模块中时， 可简化模块的结 构， 提高其可靠度， 并降低装配难度。 附图说明  The technical effects achieved by the above technical solution are as follows: The invention can realize multi-pole series connection of single-core high-power laser diodes, and can easily realize larger solid-state laser output; in addition, multiple heat sinks can be integrated into one whole In the case of being applied to a semiconductor side pump module, the structure of the module can be simplified, the reliability thereof can be improved, and the assembly difficulty can be reduced. DRAWINGS
下面参照附图结合实施例对本发明作进一步的描述。  The present invention will be further described below in conjunction with the embodiments with reference to the accompanying drawings.
图 la是本发明的立体分解图。  Figure la is an exploded perspective view of the present invention.
图 lb是本发明活动体一种错位排布形式的立体示意图。  Figure lb is a perspective view of a dislocation arrangement of the movable body of the present invention.
图 2是本发明的横截面剖视图。  Figure 2 is a cross-sectional view of the present invention.
图 3本发明热沉本体的横截面剖视图。  Figure 3 is a cross-sectional view of the heat sink body of the present invention.
图 ½是本发明另外一种实施方式的横截面剖视图。  Figure 1 is a cross-sectional view of another embodiment of the present invention.
图 4b是本发明第三种实施方式的横截面剖视图。 具体实施方式  Figure 4b is a cross-sectional view of a third embodiment of the present invention. detailed description
如图 la所示的一种用于半导体侧面泵浦模块的泵浦腔， 包括： 热沉本体 1、 活动体 3、 单芯节 4。  A pumping chamber for a semiconductor side pump module, as shown in FIG. la, includes: a heat sink body 1, a movable body 3, and a single core joint 4.
热沉本体 1是由高导热、 易加工的金属制作， 如图 la、 图 2、 图 3所示， 热沉 本体 1包括热沉块 7及内部加工的冷却通道 2， 热沉块 7位于热沉本体 1的两端部 8 之间，两端部 8的外端面轮廓呈规则的等边多边形，在多边形的中心开有一圆孔， 预留放置激光晶体及作为激光晶体的冷却通道， 此孔内壁可通过超精细加工、 溅射、 蒸发或电镀的方法， 形成高反面， 高反面内即为泵浦腔 9。 热沉块 7以此 孔或泵浦腔 9为中心均布在热沉本体 1上， 热沉块 7在热沉本体 1上呈多列排布， 热沉块 7内部加工有冷却通道 2。 泵浦腔工作时， 冷却通道 2内通冷却介质， 以对 泵浦腔内的激光晶体等进行冷却。 热沉本体 1可由整块金属加工而成， 也可用铸 造或焊接的方法制作。 活动体 3紧贴在热沉块 7的外侧， 并沿热沉本体 1中心轴线 方向排列， 形成多个线列阵。 各个活动体列阵的排布视其需要， 可采取多种排 列形式， 如图 la的连续排列， 或者如图 lb相互错位排列等。 活动体 3由高导热、 易加工的金属制作， 为左右对称结构， 各个活动体 3间具有完全的互换性。 在活 动体 3的左右两侧外表面各封装一单芯节 4， 活动体 3与热沉块 7间可通过导热胶 粘结， 也可通过其它连接方式 （比如螺纹连接）连接在一起。 The heat sink body 1 is made of a highly thermally conductive, easily processable metal. As shown in Figures la, 2, and 3, the heat sink body 1 includes a heat sink block 7 and an internally processed cooling passage 2, and the heat sink block 7 is located in the heat. Between the two end portions 8 of the sink body 1, the outer end faces of the both end portions 8 have a regular equilateral polygon, and a circular hole is formed in the center of the polygon, and a laser crystal and a cooling channel serving as a laser crystal are reserved. The inner wall can be formed into a high reverse surface by ultra-fine processing, sputtering, evaporation or electroplating, and the pumping chamber 9 is in the high reverse side. The heat sink block 7 is evenly distributed on the heat sink body 1 around the hole or the pumping chamber 9, and the heat sink block 7 is arranged in a plurality of rows on the heat sink body 1, and the heat sink block 7 is internally formed with a cooling passage 2. When the pumping chamber is in operation, the cooling medium 2 is passed through a cooling medium to cool the laser crystal or the like in the pumping chamber. The heat sink body 1 can be machined from a single piece of metal or can be made by casting or welding. The movable body 3 is closely attached to the outside of the heat sink block 7 and arranged along the central axis direction of the heat sink body 1 to form a plurality of line arrays. The arrangement of each active body array may be in various arrangements according to its needs, as shown in the continuous arrangement of la, or as shown in Figure lb. The movable body 3 is made of high thermal conductivity, Made of easy-to-machine metal, it is a bilaterally symmetrical structure, and each movable body 3 is completely interchangeable. A single core joint 4 is respectively disposed on the outer surfaces of the left and right sides of the movable body 3. The movable body 3 and the heat sink block 7 may be bonded by a thermal conductive adhesive or may be connected by other connecting means (such as a screw connection).
图 4a是本发明另外一种实施方式的横截面剖视图。 如图 4a所示泵浦腔结 构，包括热沉本体 11、安装在热沉本体 11上的活动体 13及装在活动体 13上的 单心节 4， 热沉本体 11内部加工有冷却通道 12。 热沉本体 11的中心为三角形 孔， 三角形孔可作为冷却通道， 在三角形孔内靠近孔壁处放置聚光腔或反射腔， 以在聚光腔或反射腔内形成泵浦腔 19，泵浦腔 19内用以放置激光晶体。该实施 方式中热沉本体 11的中心孔为三角形， 在实际实施中， 中心孔也可以为其他边 数的多边形孔。 当中心孔为多边形时， 其边的数量等于热沉块的数量。  Figure 4a is a cross-sectional view of another embodiment of the present invention. The pumping chamber structure shown in FIG. 4a comprises a heat sink body 11, a movable body 13 mounted on the heat sink body 11, and a single core joint 4 mounted on the movable body 13, and the heat sink body 11 is internally formed with a cooling passage 12 . The center of the heat sink body 11 is a triangular hole, and the triangular hole can serve as a cooling passage. A concentrating cavity or a reflecting cavity is placed in the triangular hole near the hole wall to form a pumping cavity 19 in the concentrating cavity or the reflecting cavity, and pumping The cavity 19 is used to place a laser crystal. In this embodiment, the central hole of the heat sink body 11 is a triangle. In actual implementation, the center hole may also be a polygonal hole of other numbers. When the center hole is a polygon, the number of sides is equal to the number of heat sink blocks.
图 4b是本发明第三种实施方式的横截面剖视图。 如图 4b所示泵浦腔结构， 包括热沉本体 21、 安装在热沉本体 21上的活动体 23及装在活动体 23上的单心节 4， 活动体 23与热沉本体 21之间采用螺钉 25连接。 热沉本体 21内部加工有冷却通 道 22。 热沉本体 21的中心为圆形孔， 圆形孔内面可进行加工或靠近内壁处放置 聚光腔或反射腔以形成泵浦腔 29， 泵浦腔 29内用以放置激光晶体。  Figure 4b is a cross-sectional view of a third embodiment of the present invention. The pumping chamber structure shown in FIG. 4b includes a heat sink body 21, a movable body 23 mounted on the heat sink body 21, and a single core 4 mounted on the movable body 23, between the movable body 23 and the heat sink body 21. Connected with screws 25. The heat sink body 21 is internally machined with a cooling passage 22. The center of the heat sink body 21 is a circular hole, and the inner surface of the circular hole can be processed or placed near the inner wall to form a concentrating cavity or a reflecting cavity to form a pumping chamber 29 for placing a laser crystal.
本发明结构紧凑可靠， 加工、 装配工艺简单， 具有维修方便， 使用寿命长， 模块化的优点。 本发明可以实现单芯节高功率激光二极管的多极串联， 易实现 更大的固体激光输出， 另外由于采用将多个热沉集成于一个整体的形式， 在应 用于半导体侧面泵浦模块中时， 可简化模块的结构， 提高其可靠度， 并降低装 配难度。  The invention has the advantages of compact and reliable structure, simple processing and assembly process, convenient maintenance, long service life and modularity. The invention can realize multi-pole series connection of single-core high-power laser diodes, easy to realize larger solid-state laser output, and in addition to adopting a form of integrating multiple heat sinks into one unit, when applied to a semiconductor side pump module , which simplifies the structure of the module, improves its reliability, and reduces assembly difficulty.

Claims

权 利 要 求 Rights request
1. 一种用于半导体侧面泵浦模块的泵浦腔， 包括热沉本体、 活动体和单芯 节， 其特征在于： 热沉本体包括热沉块和中心孔， 热沉块绕热沉本体的中心均 布排列， 多个活动体可活动地安装在热沉块上， 单芯节安装在活动体上， 热沉 本体的中心孔内可放置激光晶体。 A pumping cavity for a semiconductor side pump module, comprising a heat sink body, a movable body and a single core, wherein: the heat sink body comprises a heat sink block and a center hole, and the heat sink block surrounds the heat sink body The centers are evenly arranged, and a plurality of movable bodies are movably mounted on the heat sink block, and the single core joint is mounted on the movable body, and the laser crystal can be placed in the center hole of the heat sink body.
2. 如权利要求 1所述的用于半导体侧面泵浦模块的泵浦腔， 其特征在于- 热沉本体的中心孔可以是圆孔， 也可以是多边形孔， 多边形孔边的数量等于热 沉块的数量。  2. The pumping chamber for a semiconductor side pump module according to claim 1, wherein - the central hole of the heat sink body may be a circular hole or a polygonal hole, and the number of polygonal hole sides is equal to the heat sink. The number of blocks.
3. 如权利要求 2所述的用于半导体侧面泵浦模块的泵浦腔， 其特征在于： 所述泵浦腔即所述中心孔的内部， 中心孔的内面通过超精细加工、 溅射、 蒸发 或电镀的方法形成高反面。  3. The pumping chamber for a semiconductor side pump module according to claim 2, wherein: the pumping chamber is an inner portion of the center hole, and an inner surface of the center hole is subjected to ultrafine processing, sputtering, The method of evaporation or electroplating forms a high reverse side.
4. 如权利要求 2所述的用于半导体侧面泵浦模块的泵浦腔， 其特征在于： 所述泵浦腔位于所述中心孔的内部， 由中心孔内安置一个反射腔形成。  4. The pumping chamber for a semiconductor side pump module according to claim 2, wherein: the pumping chamber is located inside the central hole and is formed by a reflecting cavity disposed in the central hole.
5. 如权利要求 2所述的用于半导体侧面泵浦模块的泵浦腔， 其特征在于： 所述每一活动体为左右对称结构， 所述单芯节可左右对称集成在一个活动体上。  5. The pumping chamber for a semiconductor side pump module according to claim 2, wherein: each of the movable bodies is a left-right symmetric structure, and the single core segments are vertically and symmetrically integrated on one movable body. .
6. 如权利要求 5所述的用于半导体侧面泵浦模块的泵浦腔， 其特征在于： 热沉块的数量等于活动体的列数， 每一热沉块上可以安装一个或多个活动体。  6. The pumping chamber for a semiconductor side pump module according to claim 5, wherein: the number of heat sink blocks is equal to the number of columns of the movable body, and one or more activities can be installed on each heat sink block. body.
7. 如权利要求 6所述的用于半导体侧面泵浦模块的泵浦腔， 其特征在于： 活动体可分别错位或连续排列在热沉块上。  7. The pumping chamber for a semiconductor side pump module according to claim 6, wherein the movable bodies are respectively displaced or continuously arranged on the heat sink block.
8.如权利要求 1所述的用于半导体侧面泵浦模块的泵浦腔， 其特征在于- 热沉本体上设有冷却介质流通的通道。  8. The pumping chamber for a semiconductor side pump module according to claim 1, wherein the heat sink body is provided with a passage through which the cooling medium circulates.
PCT/CN2006/002819 2006-09-11 2006-10-23 Pumping cavity for semiconductor side pumping module WO2008031287A1 (en)

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