CN117559226A - Annular semiconductor laser - Google Patents
Annular semiconductor laser Download PDFInfo
- Publication number
- CN117559226A CN117559226A CN202410043855.6A CN202410043855A CN117559226A CN 117559226 A CN117559226 A CN 117559226A CN 202410043855 A CN202410043855 A CN 202410043855A CN 117559226 A CN117559226 A CN 117559226A
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- annular
- heat sink
- channel heat
- ring
- laser
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 117
- 238000001816 cooling Methods 0.000 claims description 47
- 230000004308 accommodation Effects 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000010354 integration Effects 0.000 abstract description 4
- 230000017525 heat dissipation Effects 0.000 description 5
- 239000000110 cooling liquid Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000002826 coolant Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses an annular semiconductor laser, which comprises a base and a plurality of annular laser groups, wherein the annular laser groups are sequentially nested and arranged on the base from inside to outside in a concentric manner; each annular laser group comprises an annular channel heat sink and a plurality of bar units which are arranged in series, the annular channel heat sink is fixed on the base, the bar units are arranged on the annular channel heat sink along the circumferential direction of the annular channel heat sink, and the length direction of each bar unit faces the circle center of the annular channel heat sink. The annular semiconductor laser can output annular light spots and has the advantages of high integration level, high output power, large light spot area, good light spot quality and the like.
Description
Technical Field
The invention belongs to the technical field of lasers, and particularly relates to an annular semiconductor laser.
Background
The current high-power laser products adopt a micro-channel structure or a macro-channel structure stacked array, and the generated light spots are generally rectangular or square; however, in some special use situations, for example, when a laser is used for processing rust on a circular or annular surface, the rectangular light spots or square light spots need to be repeatedly overlapped to finish the work, so that the efficiency is low and the consistency is poor; therefore, a laser capable of emitting a circular light spot or an annular light spot is needed, and a rectangular light spot or a square light spot is shaped to become the circular light spot or the annular light spot, and an additional shaping system is needed, so that the shaping system is complex in structure, the manufacturing difficulty of a laser product is increased, and the manufacturing cost is increased. In addition, in the high-power laser, the number of the used laser bars is large, a large amount of heat can be generated, uniform heat dissipation can not be realized, wavelength red shift can be caused, and the quality of light spots output by the laser is reduced.
Disclosure of Invention
In view of the above, the present invention discloses a ring-shaped semiconductor laser to overcome or at least partially solve the above-mentioned problems.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the invention provides an annular semiconductor laser, which comprises a base and a plurality of annular laser groups, wherein the annular laser groups are sequentially nested and arranged on the base from inside to outside in a concentric manner;
each annular laser group comprises an annular channel heat sink and a plurality of bar units which are arranged in series, the annular channel heat sink is fixed on the base, the bar units are arranged on the annular channel heat sink along the circumferential direction of the annular channel heat sink, and the length direction of each bar unit faces the circle center of the annular channel heat sink.
Further, a water cooling channel is arranged in the annular channel heat sink, a water inlet channel and a water outlet channel are arranged in the base, the water inlet channel and the water outlet channel extend along a radial direction of the annular laser group and are arranged at intervals, at least one water inlet is formed in the upper portion of the water inlet channel, at least one water outlet is formed in the upper portion of the water outlet channel, the water inlet is communicated with the water inlet end of the water cooling channel, and the water outlet is communicated with the water outlet end of the water cooling channel.
Further, the water cooling channel is annularly arranged in the annular channel heat sink, the water inlet end of the water cooling channel and the water outlet end of the water cooling channel are arranged on the lower end face of the annular channel heat sink, and the water inlet end of the water cooling channel and the water outlet end of the water cooling channel are positioned at two ends of one diameter of the annular channel heat sink.
Further, a plurality of the bar units on each of the annular channel heat sinks are arranged at uniform intervals.
Further, the number of the bar units on the annular channel heat sink from inside to outside sequentially increases.
Further, two adjacent ring laser groups are arranged at a preset distance.
Further, each ring laser group further includes a substrate;
the base plate is fixed on the annular channel heat sink, the bar units are arranged on the base plate, a gold film is plated on the base plate, and two adjacent bar units are connected in series through the gold film.
Further, the positive electrodes and the negative electrodes of two adjacent ring laser groups are connected in series through conducting strips.
Further, the lower end of the base is provided with a positive terminal and a negative terminal, the positive terminal is connected with the positive electrode of the ring laser group of the outermost ring through a first connecting piece, and the negative terminal is connected with the negative electrode of the ring laser group of the innermost ring through a second connecting piece;
the first connecting piece and the second connecting piece are sleeved with insulating sleeves.
Further, a first accommodating groove and a second accommodating groove are formed in the lower end of the base, the positive terminal is arranged in the first accommodating groove, and the negative terminal is arranged in the second accommodating groove;
the outer side surface of the annular channel heat sink of the outermost ring is provided with a first connecting groove, the outer side surface of the base is provided with a second connecting groove, two ends of the second connecting groove are respectively communicated with the first connecting groove and the first accommodating groove, and the first connecting piece is positioned in the first connecting groove and the second connecting groove; the inner side surface of the annular channel heat sink of the innermost ring is provided with a third connecting groove, the center position of the base is provided with a fourth connecting groove, two ends of the fourth connecting groove are respectively communicated with the third connecting groove and the second containing groove, and the second connecting piece is positioned in the third connecting groove and the fourth connecting groove.
The invention has the advantages and beneficial effects that:
in the annular semiconductor laser, a plurality of annular laser groups are sequentially nested on the base from inside to outside in a concentric manner, a plurality of bar units in the annular laser groups are arranged on the annular channel heat sink along the circumferential direction of the annular channel heat sink, and the length direction of each bar unit faces the center of the annular channel heat sink, so that the annular semiconductor laser can output uniform annular light spots, the output power is larger, and the integration level is higher; in addition, the output power is increased by increasing the number of the ring laser groups, so that the output light spots are more uniform and are not influenced by mechanical structural factors.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
FIG. 1 is a perspective view of a ring semiconductor laser in accordance with one embodiment of the present invention;
FIG. 2 is an enlarged view of FIG. 1 at A;
FIG. 3 is a bottom view of a ring semiconductor laser in one embodiment of the invention;
FIG. 4 is a perspective view of a ring laser assembly according to one embodiment of the invention;
FIG. 5 is a perspective view of an annular channel heat sink in accordance with one embodiment of the present invention;
FIG. 6 is a bottom view of an annular channel heat sink in accordance with one embodiment of the present invention;
FIG. 7 is a perspective view of a base in an embodiment of the invention;
fig. 8 is a bottom view of a base in one embodiment of the invention.
In the figure: 1. a base; 2. an annular channel heat sink; 3. a bar unit; 4. a water inlet; 5. a water outlet; 6. a water inlet end of the water cooling channel; 7. a water outlet end of the water cooling channel; 8. a substrate; 9. a conductive sheet; 10. a positive electrode terminal; 11. a negative electrode terminal; 12. a first connector; 13. a first accommodation groove; 14. a second accommodation groove; 15. a first connection groove; 16. a second connecting groove; 17. a fourth connecting groove; 18. a first screw hole; 19. a second screw hole; 20. and a third screw hole.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to specific embodiments of the present invention and corresponding drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The following describes in detail the technical solutions provided by the embodiments of the present invention with reference to the accompanying drawings.
In one embodiment of the invention, as shown in fig. 1 and 4, the annular semiconductor laser comprises a base 1 and a plurality of annular laser groups, wherein the annular laser groups are sequentially nested and arranged on the base 1 from inside to outside in a concentric manner, so that the annular semiconductor laser can output annular light spots; the number of ring laser groups may be set according to the required output spot size and output power, for example, one or two ring laser groups may be set, and in this embodiment, the number of ring laser groups is set to three. If the annular light spot to be output is larger and the output power is larger, a plurality of annular laser groups which are sequentially nested from inside to outside can be arranged, so that the integration level of the annular semiconductor laser is higher. The output power is increased by increasing the number of the ring laser groups, so that the output light spots are more uniform and are not influenced by mechanical structural factors.
And each annular laser group comprises an annular channel heat sink 2 and a plurality of bar units 3 which are arranged in series, the annular channel heat sink 2 is fixed on the base 1, the plurality of bar units 3 are arranged on the annular channel heat sink 2 along the circumferential direction of the annular channel heat sink 2, and the length direction of each bar unit 3 faces the circle center of the annular channel heat sink 2, so that not only the annular light spots output by each annular laser group are more uniform, but also a greater number of bar units 3 can be arranged on the annular channel heat sink 2.
In summary, in the annular semiconductor laser of the embodiment, a plurality of annular laser groups are sequentially nested and arranged on the base from inside to outside in a concentric manner, and a plurality of bar units in the annular laser groups are arranged on the annular channel heat sink along the circumferential direction of the annular channel heat sink, and the length direction of each bar unit faces the center of the annular channel heat sink, so that the annular semiconductor laser can output uniform annular light spots, the output power is higher, and the integration level is higher; in addition, the output power is increased by increasing the number of the ring laser groups, so that the output light spots are more uniform and are not influenced by mechanical structural factors.
In this embodiment, as shown in fig. 6 and 7, a water cooling channel is disposed in the annular channel heat sink 2, cooling of the bar unit 3 on the annular channel heat sink 2 can be achieved through the water cooling channel, a water inlet channel and a water outlet channel are disposed in the base 1, the water inlet channel and the water outlet channel extend along a radial direction of the annular laser group, so that the distance between the water inlet channel and the water outlet channel disposed in the annular channel heat sink 2 is shortest, the water inlet channel and the water outlet channel are disposed at intervals, i.e. the water inlet channel and the water outlet channel are located on the same diameter of the annular laser group, and the end portion of the water inlet channel and the end portion of the water outlet channel are disposed at intervals, so that the water inlet channel and the water outlet channel are not directly communicated, at least one water inlet 4 is disposed above the water inlet channel, at least one water outlet 5 is disposed along a length direction of the water outlet channel, and the number of the water inlets 4 and the water outlets 5 is consistent with the number of the annular laser groups; in this embodiment, the number of water inlet 4 and delivery port 5 is three, and when annular laser group was fixed on base 1, water inlet 4 and water-cooling channel's water inlet end 6 intercommunication, delivery port 5 and water-cooling channel's water outlet end 7 intercommunication, makes annular laser group carry out cooling with parallelly connected refrigerated mode, mutually noninterferes, and the cooling radiating effect is better. In this way, the cooling liquid in the water inlet channel enters the water cooling channel in the annular channel heat sink 2 through the water inlet 4, and after heat exchange is carried out in the water cooling channel, the cooling liquid enters the water outlet channel through the water outlet 5. And a sealing ring is arranged between the water inlet and the water inlet end of the water cooling channel and between the water outlet and the water outlet end of the water cooling channel, so as to prevent the coolant from overflowing.
Through set up the water cooling passageway in annular laser group to and set up waterway structure in the base, make annular laser group can be by even cooling, and make the temperature of the coolant liquid that passes through every annular laser group unanimous, can guarantee that the performance of laser instrument product is more stable, and then make the quality of laser instrument output facula higher.
In addition, as shown in fig. 6, the water cooling channel is annularly arranged in the annular channel heat sink 2, the water inlet end 6 of the water cooling channel and the water outlet end 7 of the water cooling channel are arranged on the lower end surface of the annular channel heat sink 2, and the water inlet end 6 of the water cooling channel and the water outlet end 7 of the water cooling channel are positioned at two ends of one diameter of the annular channel heat sink 2, so that two flow paths are formed between the water inlet end 6 of the water cooling channel and the water outlet end 7 of the water cooling channel, one flow path is used for cooling the annular channel heat sink 2 on one side of a straight line where the water inlet end 6 of the water cooling channel and the water outlet end 7 of the water cooling channel are positioned, the other flow path is used for cooling the annular channel heat sink 2 on the other side of the straight line where the water inlet end 6 of the water cooling channel and the water outlet end 7 of the water cooling channel are positioned, and the flow distances of the two flow paths are the same, and uniform heat dissipation of the annular channel heat sink 2 can be realized.
In this embodiment, as shown in fig. 1 and 4, the plurality of bar units 3 on each annular channel heat sink 2 are uniformly arranged at intervals, that is, the bar units 3 on the annular channel heat sink 2 are uniformly distributed, so that not only the mutual interference between the bar units 3 can be reduced, but also the uniformity of output light spots is better.
The bar unit comprises a P-surface sub-heat sink, an N-surface sub-heat sink and a laser bar; the laser bar is arranged between the P-surface sub-heat sink and the N-surface sub-heat sink, the P-surface sub-heat sink is positioned on the P-surface of the laser bar, and the N-surface sub-heat sink is positioned on the N-surface of the laser bar, so that heat dissipation among the laser bars is not affected mutually, and the quality of light spots output by the laser bar is ensured.
In addition, the two adjacent ring laser groups are arranged at intervals of a preset distance, wherein the preset distance is 0.3 cm-0.7 cm, and preferably 0.5 cm; this not only enables insulation between the ring laser groups, but also reduces mutual interference between the ring laser groups. Of course, insulation between two adjacent ring laser groups can be achieved by insulating tape.
Further, as shown in fig. 1, the number of the bar units 3 on each annular channel heat sink 2 is the same, the bar units 3 on different annular channel heat sinks 2 are in one-to-one correspondence, and are located in the same radial direction of the annular channel heat sink 2, so that the heat dissipation effect of each bar unit 3 on the annular semiconductor laser is the same, the consistency of the use environment of the bar units 3 is ensured, and the service life of the annular semiconductor laser is further prolonged.
In other embodiments, the number of the bar units 3 on the annular channel heat sink 2 from inside to outside sequentially increases, that is, the number of the bar units 3 on the annular channel heat sink 2 on the outer side is greater than the number of the bar units 3 on the annular channel heat sink 2 on the inner side, so that the light spot density output by each annular laser group is the same, and further, the output light spots of the annular semiconductor laser are more uniform. Of course, in order to ensure that the heat dissipation effect of each bar unit 3 on the annular semiconductor laser is the same, the apertures of the water cooling channels in the annular channel heat sink 2 from inside to outside are sequentially increased, so that the flow rate of the cooling liquid flowing through the water cooling channels in the annular channel heat sink 2 at the outside is greater than the flow rate of the cooling liquid flowing through the water cooling channels in the annular channel heat sink 2 at the inside.
In the present embodiment, as shown in fig. 1, 2 and 4, each ring laser group further includes a substrate 8; the substrate is a ceramic substrate, which has the functions of insulation and heat conduction.
The base plate 8 is fixed on the annular channel heat sink 2, the bar units 3 are arranged on the base plate 8, the base plate 8 is plated with a gold film, and the two adjacent bar units 3 are connected in series through the gold film, so that heat generation at the electric connection position of the two adjacent bar units 3 can be effectively reduced.
As shown in fig. 2, the positive and negative electrodes of two adjacent ring laser groups are connected in series by a conductive sheet 9. The conductive sheet can be a copper sheet. Of course, the ring laser groups can be connected in parallel, so that the working independence of the ring laser groups is ensured.
Further, as shown in fig. 1 to 3, the lower end of the base 1 is provided with a positive electrode terminal 10 and a negative electrode terminal 11, the positive electrode terminal 10 is arranged outside the ring laser group, the negative electrode terminal 11 is arranged inside the negative electrode terminal 11, the positive electrode terminal 10 is connected with the positive electrode of the ring laser group of the outermost ring through a first connecting piece 12, and the negative electrode terminal 11 is connected with the negative electrode of the ring laser group of the innermost ring through a second connecting piece; in this way, when the annular semiconductor laser is connected, the interference on the bar unit can be reduced, and the annular semiconductor laser is also convenient to be connected. The first connecting piece is of an L shape, the short side of one end of the L shape is fixedly connected with the positive electrode of the ring laser group of the outermost ring, the other end of the L shape is fixedly connected with the positive electrode terminal, and the second connecting piece and the first connecting piece have the same structure and connection mode and are not repeated herein.
In addition, all cover has insulating pipe sleeve on first connecting piece and the second connecting piece for realize the insulating protection of first connecting piece and second connecting piece, insulating pipe sleeve can be the pyrocondensation pipe, makes insulating pipe sleeve can tightly wrap up on first connecting piece and second connecting piece like this.
In other embodiments, the positive terminal is disposed on the inner side of the ring laser group, the negative terminal is disposed on the outer side of the ring laser group, the positive terminal is connected with the positive electrode of the ring laser group of the innermost ring through the first connecting piece, and the negative terminal is connected with the negative electrode of the ring laser group of the outermost ring through the second connecting piece.
In this embodiment, as shown in fig. 2 to 8, the lower end of the base 1 is provided with a first accommodating groove 13 and a second accommodating groove 14, the positive terminal 10 is disposed in the first accommodating groove 13, the negative terminal 11 is disposed in the second accommodating groove 14, and second screw holes 19 are respectively disposed in the first accommodating groove 13 and the second accommodating groove 14, so that the positive terminal 10 and the negative terminal 11 are respectively fixed in the first accommodating groove 13 and the second accommodating groove 14 through the second screw holes 19.
The outer side surface of the annular channel heat sink 2 of the outermost ring is provided with a first connecting groove 15, the outer side surface of the base 1 is provided with a second connecting groove 16, two ends of the second connecting groove 16 are respectively communicated with the first connecting groove 15 and the first accommodating groove 13, and the first connecting piece 12 is positioned in the first connecting groove 15 and the second connecting groove 16; a third connecting groove is formed in the inner side face of the innermost annular channel heat sink 2, a fourth connecting groove 17 is formed in the center of the base 1, two ends of the fourth connecting groove 17 are respectively communicated with the third connecting groove and the second containing groove 14, and the second connecting piece is located in the third connecting groove and the fourth connecting groove 17.
In this way, the groove body is provided to accommodate the positive electrode terminal 10, the negative electrode terminal 11, the first connecting piece 12 and the second connecting piece, so that the annular semiconductor laser can not damage the positive electrode terminal 10, the negative electrode terminal 11, the first connecting piece 12 and the second connecting piece in the use process, and the appearance of the annular semiconductor laser is more regular.
In addition, as shown in fig. 6 and 7, a first screw hole 18 is formed in the base 1, and a third screw hole 20 is formed in the annular channel heat sink 2, so that the annular channel heat sink 2 can be fixed to the base 1 through the first screw hole 18, the third screw hole 20 and bolts.
In addition, the base in the present embodiment is square; of course, the base may have other shapes, such as a circular shape or a ring shape.
The foregoing is merely a specific embodiment of the invention and other modifications and variations can be made by those skilled in the art in light of the above teachings. It is to be understood by persons skilled in the art that the foregoing detailed description is provided for the purpose of illustrating the invention more fully, and that the scope of the invention is defined by the appended claims.
Claims (10)
1. The annular semiconductor laser is characterized by comprising a base and a plurality of annular laser groups, wherein the annular laser groups are sequentially nested and arranged on the base from inside to outside in a concentric manner;
each annular laser group comprises an annular channel heat sink and a plurality of bar units which are arranged in series, the annular channel heat sink is fixed on the base, the bar units are arranged on the annular channel heat sink along the circumferential direction of the annular channel heat sink, and the length direction of each bar unit faces the circle center of the annular channel heat sink.
2. The annular semiconductor laser according to claim 1, wherein a water cooling channel is arranged in the annular channel heat sink, a water inlet channel and a water outlet channel are arranged in the base, the water inlet channel and the water outlet channel extend along a radial direction of the annular laser group and are arranged at intervals, at least one water inlet is formed in the upper portion of the water inlet channel, at least one water outlet is formed in the upper portion of the water outlet channel, the water inlet is communicated with a water inlet end of the water cooling channel, and the water outlet is communicated with a water outlet end of the water cooling channel.
3. The annular semiconductor laser of claim 2, wherein the water cooling channel is disposed in the annular channel heat sink in an annular shape, the water inlet end of the water cooling channel and the water outlet end of the water cooling channel are disposed on a lower end surface of the annular channel heat sink, and the water inlet end of the water cooling channel and the water outlet end of the water cooling channel are located at two ends of a diameter of the annular channel heat sink.
4. The annular semiconductor laser of claim 1 wherein a plurality of said bar units on each of said annular channel heat sinks are disposed in uniform spacing.
5. The annular semiconductor laser of claim 1 wherein the number of bar units on the annular channel heat sink increases sequentially from inside to outside.
6. The ring semiconductor laser of claim 1, wherein adjacent two of said ring laser groups are spaced apart a predetermined distance.
7. The ring semiconductor laser of claim 1, wherein each ring laser group further comprises a substrate;
the base plate is fixed on the annular channel heat sink, the bar units are arranged on the base plate, a gold film is plated on the base plate, and two adjacent bar units are connected in series through the gold film.
8. The ring semiconductor laser according to any one of claims 1 to 7, wherein positive and negative electrodes of adjacent two ring laser groups are connected in series by a conductive sheet.
9. The ring-shaped semiconductor laser according to claim 8, wherein a positive terminal and a negative terminal are provided at a lower end of the base, the positive terminal being connected to a positive electrode of the ring-shaped laser group of the outermost ring through a first connection member, the negative terminal being connected to a negative electrode of the ring-shaped laser group of the innermost ring through a second connection member;
the first connecting piece and the second connecting piece are sleeved with insulating sleeves.
10. The annular semiconductor laser according to claim 9, wherein a first accommodation groove and a second accommodation groove are opened at a lower end of the base, the positive electrode terminal is disposed in the first accommodation groove, and the negative electrode terminal is disposed in the second accommodation groove;
the outer side surface of the annular channel heat sink of the outermost ring is provided with a first connecting groove, the outer side surface of the base is provided with a second connecting groove, two ends of the second connecting groove are respectively communicated with the first connecting groove and the first accommodating groove, and the first connecting piece is positioned in the first connecting groove and the second connecting groove; the inner side surface of the annular channel heat sink of the innermost ring is provided with a third connecting groove, the center position of the base is provided with a fourth connecting groove, two ends of the fourth connecting groove are respectively communicated with the third connecting groove and the second containing groove, and the second connecting piece is positioned in the third connecting groove and the fourth connecting groove.
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| CN202410043855.6A CN117559226B (en) | 2024-01-12 | 2024-01-12 | Annular semiconductor laser |
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| CN108199257A (en) * | 2017-12-25 | 2018-06-22 | 苏州长光华芯光电技术有限公司 | A kind of high-temperature solder conduction cooling laser diode annular folds battle array |
| CN116365354A (en) * | 2021-12-28 | 2023-06-30 | 山东华光光电子股份有限公司 | Square semiconductor laser stacking system and assembly method thereof |
| CN117080858A (en) * | 2023-08-18 | 2023-11-17 | 三序光学科技(苏州)有限公司 | Circumferential array integrated semiconductor laser |
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