CN102522694A - Linear light source device for high-power semiconductor laser array - Google Patents
Linear light source device for high-power semiconductor laser array Download PDFInfo
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- CN102522694A CN102522694A CN2011104116287A CN201110411628A CN102522694A CN 102522694 A CN102522694 A CN 102522694A CN 2011104116287 A CN2011104116287 A CN 2011104116287A CN 201110411628 A CN201110411628 A CN 201110411628A CN 102522694 A CN102522694 A CN 102522694A
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Abstract
The invention disclose a linear light source device for a high-power semiconductor laser array, which comprises a water cooling tank of which the cross section is in a symmetric trapezium, at least four ceramic substrates of which double sides are metallized and at least four semiconductor laser array chips, wherein the at least four ceramic substrates are symmetrically arranged on the trapezoidal slopes on two sides of the water cooling tank along the axis of the water cooling tank; and each ceramic substrate is provided with one semiconductor laser array chip. According to the technical scheme provided by the invention, one water cooling tank is provided with two rows of linear light sources to improve the output power of the linear light source device for the semiconductor laser array. On a space near the circumference of the section of a laser crystal bar, a high-density linear light source for the semiconductor laser array, used as a lateral pump light source, is realized. Meanwhile, as the structure is more compact, more raw materials are saved and the cost is lower.
Description
Technical field
The present invention relates to a kind of light supply apparatus, relate in particular to a kind of Superpower semiconductor laser array linear light sorurce device, belong to field of semiconductor lasers.
Background technology
In the light-pumped solid state laser field, semiconductor laser array linear light sorurce device is its core component at semiconductor laser side, and corresponding manufacturing technology also is a semiconductor laser side to one of key technology of light-pumped solid state laser.Generally speaking, the semiconductor laser array linear light sorurce device and the corresponding side-pumping mounting arrangement method thereof of following two kinds of structures arranged at present both at home and abroad, the one, like Fig. 1, shown in Figure 2; Laser array chips 1 is mounted in the middle of two relative metal heat sinks 2, is installed on the water-cooling groove 4 through insulated substrate 3 then, can be installed in into strips on the water-cooling groove 4 by several row of cells of being made up of laser array chips 1, metal heat sink 2 and insulated substrate 3; Can be electrically connected in series through lead formation between each semiconductor laser array, thereby form a linear light sorurce of forming by a plurality of semiconductor laser arraies, like Fig. 1; In the solid state laser of pumping, the semiconductor laser linear light sorurce of above-mentioned formation is installed on the cross-sectional periphery of laser crystal bar 5 at semiconductor laser side, evenly distributes; According to the space size; The linear light sorurce of varying number can be installed on circumference, be generally 3, also can be other quantity; The light emission direction of the laser array chips of all linear light sorurces all points to the axle center of laser crystal 5; Because the special construction of laser array chips makes the angle of divergence of its quick shaft direction bigger, effectively absorb the pump light that semiconductor laser is launched in order to make laser crystal, so the light-emitting window of semiconductor laser array linear light sorurce can not be too far away from laser crystal 5; Therefore; On the laser crystal cross-sectional periphery, can install like the number of the linear light sorurce of Fig. 2 structure very limitedly, can't promote pump power through the quantity that increases pump light source; And semiconductor laser array linear light sorurce complex structure as shown in Figure 2, the manufacture craft difficulty is high; Another kind of laser array chips 1 is mounted on the ceramic substrate 6 of double-sided metalization like Fig. 3, shown in Figure 4, and this ceramic substrate 6 has good thermal conduction characteristic; Be installed in then on the water-cooling groove 4, can be installed in into strips on the water-cooling groove 4, can be electrically connected in series through the spun gold lead between each semiconductor laser array by several row of cells of forming by laser array chips 1, ceramic substrate 6; Become a linear light sorurce of forming by a plurality of semiconductor laser arraies, like Fig. 3, at semiconductor laser side in the solid state laser of pumping; The semiconductor laser linear light sorurce is installed on the cross-sectional periphery of laser crystal bar 5; Evenly distribute, because this semiconductor laser linear light sorurce composition structure is simple relatively, institute takes up space also less relatively; Therefore packing density can be bigger on laser crystal 5 cross-sectional periphery; As 6 etc., also can be other quantity, the light emission direction of the laser array chips of all linear light sorurces all points to the axle center of laser crystal 5; Semiconductor laser array linear light sorurce as shown in Figure 4 is a unsymmetric structure; Guarantee the axle center of the light emission direction aligning laser crystal bar of laser array new film, on mounting process, difficulty is higher.
Summary of the invention
The objective of the invention is to make complicated and the big shortcoming of installation difficulty, a kind of architecture compactness is provided, has more saved, install simply, and can improve the Superpower semiconductor laser array linear light sorurce device of power output to prior art.
A kind of Superpower semiconductor laser array linear light sorurce device of the present invention; Comprise that a cross section is the trapezoidal water-cooling groove of symmetry, ceramic substrate and at least four laser array chips of at least four double-sided metalizations; Said at least four ceramic substrates are symmetrically set in along the water-cooling groove axis on the trapezoidal inclined-plane of water-cooling groove both sides, and said each ceramic substrate is provided with a laser array chips.
Further, the positive level face and the ceramic base plate surface of said array chip are fitted and electric connection, and face edge, the luminous chamber of said array chip aligns with ceramic substrate edge and water-cooling groove inclined-plane top edge.
Further, said array chip and ceramic substrate weld together, and said ceramic substrate and water-cooling groove weld together.
Further, brazing metal is adopted in the welding of said array chip and ceramic substrate and ceramic substrate and water-cooling groove.
Further, the said array chip that is arranged in the water-cooling groove both sides, the array chip that is positioned at homonymy is connected each other.
Further, said array chip is through the series connection of spun gold lead.
Further, said ceramic substrate adopts high heat-conducting ceramic to process.
Further, be provided with spacing between said two adjacent ceramic substrates.
The invention has the beneficial effects as follows:
Adopt technical scheme of the present invention to realize on a water-cooling groove, installing two winding displacement property light sources; Improved the power output of a semiconductor laser array linear light sorurce device; On near the space laser crystal bar cross-sectional periphery, realized that the semiconductor laser array linear light sorurce is installed as the side-pumping light source more to high-density, simultaneously because structure is more compact; Raw material are also more saved, and cost is cheaper.Laser array chips outgoing direction of principal axis on the inclined-plane, trapezoidal water-cooling groove both sides intersects in the space; This intersection point is both for using the axle center of semiconductor laser array linear light sorurce device as the laser crystal bar of the solid state laser of side-pumping light source; Therefore, installation side is very simple to the method for pump light source near the space laser crystal bar cross-sectional periphery.
Description of drawings
Fig. 1 is a prior art neutral line light supply apparatus application structure sketch map;
Fig. 2 is a prior art neutral line light supply apparatus cross section structure sketch map;
Fig. 3 is the solid state laser cavity cross-section structural representation of prior art neutral line light supply apparatus as the side-pumping light source;
Fig. 4 is a prior art neutral line light supply apparatus cross section structure sketch map;
Fig. 5 is the solid state laser cavity cross-section structural representation of the described Superpower semiconductor laser array linear light sorurce of embodiment of the invention device as the side-pumping light source;
Fig. 6 is the described Superpower semiconductor laser array linear light sorurce of an embodiment of the invention device cross section structure sketch map;
Fig. 7 is the described Superpower semiconductor laser array linear light sorurce of an embodiment of the invention device perspective view;
Fig. 8 is the electric connection structure figure between the side array chip of the described Superpower semiconductor laser array linear light sorurce of embodiment of the invention device.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and characteristic are described, institute gives an actual example and only is used to explain the present invention, is not to be used to limit scope of the present invention.
Like Fig. 6, shown in Figure 7, the embodiment of the invention provides a kind of Superpower semiconductor laser array linear light sorurce device, and said device comprises a water-cooling groove 2; Water-cooling groove 2 cross sections are symmetrical trapezium structure; The angle that trapezoidal two hypotenuses form is provided with a water-cooling channel 21 in the middle of the water-cooling groove 2 between 30 °～150 °, logical recirculated cooling water in the course of work; Can take away the heat that laser chip produces; Be pasted with several ceramic substrates 41 on the inclined-plane, both sides of said water-cooling groove 2, ceramic substrate 41 is a kind of high heat-conducting ceramic, and upper and lower surfaces is through metalized; Mount a laser array chips 42 on said each ceramic substrate 41; The P face of laser array chips 42 and the upper surface of ceramic substrate 41 are fitted, and the face edge, luminous chamber of said each laser array chips 42 aligns with the edge of each ceramic substrate 41 and the narrow arris edge of trapezoidal water-cooling groove 2, and said ceramic substrate 41 length are consistent with said laser array chips 42 length; Be provided with a gap length between said each ceramic substrate 41; The upper surface of said ceramic substrate 41 is communicated with the positive pole of laser array chips 42, and the non-face of weld of laser array chips 42 is a negative pole, like Fig. 7, Fig. 8; Each laser array chips 42 of water-cooling groove 2 both sides is connected in series through spun gold lead 43; Like this, described Superpower semiconductor laser array linear light sorurce device has been realized on a water-cooling groove 2 the linear two row's laser array chips 42 of installing, and every row's laser array chips 42 numbers can be controlled at 2 according to water-cooling groove 2 length and not wait to tens.
As shown in Figure 5; The embodiment of the invention also provides described Superpower semiconductor laser array linear light sorurce device in solid state laser, should be used as the installation method of pump light source; Laser array chips 42 outgoing direction of principal axis in the said Superpower semiconductor laser array linear light sorurce device on the inclined-plane, symmetrical trapezoidal water-cooling groove 2 both sides intersect in the space; See that from the cross section intersection point is exactly to use the axle center of semiconductor laser array linear light sorurce device as the laser crystal bar 1 of the solid state laser of side-pumping light source, according to space capable of using size; The semiconductor laser array linear light sorurce device of varying number can be installed near laser crystal bar 1 cross-sectional periphery; Can be 3, also can be other quantity, and said linear light sorurce device is evenly distributed on the cross-sectional periphery of laser crystal bar 1; And the light emission direction of laser array chips 42 all points to the axle center of laser crystal 1, installs simple and convenient.
More than be merely preferred embodiment of the present invention, or not all within spirit of the present invention and principle in order to restriction the present invention, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. Superpower semiconductor laser array linear light sorurce device; It is characterized in that; Comprise that a cross section is the trapezoidal water-cooling groove of symmetry, ceramic substrate and at least four laser array chips of at least four double-sided metalizations; Said at least four ceramic substrates are symmetrically set in along the water-cooling groove axis on the trapezoidal inclined-plane of water-cooling groove both sides, and said each ceramic substrate is provided with a laser array chips.
2. according to the described Superpower semiconductor laser array linear light sorurce of claim 1 device; It is characterized in that; The positive level face and the ceramic base plate surface of said array chip are fitted and electric connection, and face edge, the luminous chamber of said array chip aligns with ceramic substrate edge and water-cooling groove inclined-plane top edge.
3. according to the described Superpower semiconductor laser array linear light sorurce of claim 2 device, it is characterized in that said array chip and ceramic substrate weld together, said ceramic substrate and water-cooling groove weld together.
4. according to the described Superpower semiconductor laser array linear light sorurce of claim 3 device, it is characterized in that brazing metal is adopted in the welding of said array chip and ceramic substrate and ceramic substrate and water-cooling groove.
5. according to the described Superpower semiconductor laser array linear light sorurce of claim 2 device, it is characterized in that, the said array chip that is arranged in the water-cooling groove both sides, the array chip that is positioned at homonymy is connected each other.
6. according to the described Superpower semiconductor laser array linear light sorurce of claim 5 device, it is characterized in that said array chip is through the series connection of spun gold lead.
7. according to the described Superpower semiconductor laser array linear light sorurce of claim 4 device, it is characterized in that said ceramic substrate adopts high heat-conducting ceramic to process.
8. according to each described Superpower semiconductor laser array linear light sorurce device of claim 1 to 7, it is characterized in that, be provided with spacing between said two adjacent ceramic substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2011104116287A CN102522694A (en) | 2011-12-12 | 2011-12-12 | Linear light source device for high-power semiconductor laser array |
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| CN2011104116287A CN102522694A (en) | 2011-12-12 | 2011-12-12 | Linear light source device for high-power semiconductor laser array |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102868086A (en) * | 2012-09-20 | 2013-01-09 | 无锡亮源激光技术有限公司 | Compact type high-power infrared illuminating laser |
| CN107492785A (en) * | 2017-08-16 | 2017-12-19 | 西安炬光科技股份有限公司 | A kind of semiconductor laser light source module for realizing circular light spot and profile pump device |
| CN107565359A (en) * | 2017-08-16 | 2018-01-09 | 西安炬光科技股份有限公司 | A kind of semiconductor laser side face-pumping pumping system |
| CN108231714A (en) * | 2016-12-14 | 2018-06-29 | 株洲中车时代电气股份有限公司 | A kind of power module and preparation method thereof |
| CN109690884A (en) * | 2016-09-12 | 2019-04-26 | 厦门超旋光电科技有限公司 | System and device with laser array illumination |
| WO2021098841A1 (en) * | 2019-11-21 | 2021-05-27 | 深圳市中光工业技术研究院 | Laser light source |
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| US5521931A (en) * | 1993-11-22 | 1996-05-28 | Xerox Corporation | Nonmonolithic arrays of accurately positioned diode lasers |
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| CN101494354A (en) * | 2008-01-22 | 2009-07-29 | 北京吉泰基业科技有限公司 | High-power laser diode array pump cavity and running method |
| US20100128750A1 (en) * | 2008-11-21 | 2010-05-27 | Toshiyuki Fukuda | Semiconductor device and fabrication method for the same |
| CN102025111A (en) * | 2010-11-19 | 2011-04-20 | 无锡亮源激光技术有限公司 | Small-divergence-angle solid laser pumping module encapsulating structure |
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| US5521931A (en) * | 1993-11-22 | 1996-05-28 | Xerox Corporation | Nonmonolithic arrays of accurately positioned diode lasers |
| CN101145670A (en) * | 2006-09-11 | 2008-03-19 | 深圳市大族激光科技股份有限公司 | A pumped intro-cavity for semiconductor side pumped intro-module |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102868086A (en) * | 2012-09-20 | 2013-01-09 | 无锡亮源激光技术有限公司 | Compact type high-power infrared illuminating laser |
| CN109690884A (en) * | 2016-09-12 | 2019-04-26 | 厦门超旋光电科技有限公司 | System and device with laser array illumination |
| CN108231714A (en) * | 2016-12-14 | 2018-06-29 | 株洲中车时代电气股份有限公司 | A kind of power module and preparation method thereof |
| CN108231714B (en) * | 2016-12-14 | 2019-12-27 | 株洲中车时代电气股份有限公司 | Power module and manufacturing method thereof |
| CN107492785A (en) * | 2017-08-16 | 2017-12-19 | 西安炬光科技股份有限公司 | A kind of semiconductor laser light source module for realizing circular light spot and profile pump device |
| CN107565359A (en) * | 2017-08-16 | 2018-01-09 | 西安炬光科技股份有限公司 | A kind of semiconductor laser side face-pumping pumping system |
| CN107492785B (en) * | 2017-08-16 | 2019-08-20 | 西安炬光科技股份有限公司 | A kind of semiconductor laser light source module that realizing circular light spot and profile pump device |
| CN107565359B (en) * | 2017-08-16 | 2019-09-17 | 西安炬光科技股份有限公司 | A kind of semiconductor laser side face-pumping pumping system |
| WO2021098841A1 (en) * | 2019-11-21 | 2021-05-27 | 深圳市中光工业技术研究院 | Laser light source |
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Application publication date: 20120627 |