WO2008029283A3 - Périphérique opto-électronique pour transfert de données à haute vitesse - Google Patents

Périphérique opto-électronique pour transfert de données à haute vitesse Download PDF

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Publication number
WO2008029283A3
WO2008029283A3 PCT/IB2007/003510 IB2007003510W WO2008029283A3 WO 2008029283 A3 WO2008029283 A3 WO 2008029283A3 IB 2007003510 W IB2007003510 W IB 2007003510W WO 2008029283 A3 WO2008029283 A3 WO 2008029283A3
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WIPO (PCT)
Prior art keywords
reflector
intensity
cavity
light
data transfer
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PCT/IB2007/003510
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English (en)
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WO2008029283A2 (fr
Inventor
Nikolai Ledentsov
Vitaly Shchukin
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Nikolai Ledentsov
Vitaly Shchukin
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Publication date
Priority claimed from US11/453,979 external-priority patent/US7593436B2/en
Application filed by Nikolai Ledentsov, Vitaly Shchukin filed Critical Nikolai Ledentsov
Priority to EP07848895A priority Critical patent/EP2033282B1/fr
Publication of WO2008029283A2 publication Critical patent/WO2008029283A2/fr
Publication of WO2008029283A3 publication Critical patent/WO2008029283A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
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    • H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
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    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
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    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/205—Antiguided structures

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

La présente invention concerne un périphérique opto-électronique verticalement intégré qui permet le transfert de données à haute vitesse par modulation directe ou indirecte de l'intensité de la lumière émise. Ce périphérique comprend au moins un réflecteur d'interférence multicouche et au moins une cavité. Dans un mode de réalisation, le réflecteur fonctionne comme élément modulateur contrôlé par une tension appliquée. L'affaiblissement dû au filtre d'arrêt du réflecteur est électro-optiquement réglé en utilisant l'effet Stark de confinement quantique en proximité du mode de cavité, ce qui entraîne une transmittance modulée du réflecteur et, ainsi, la modulation indirecte de l'intensité lumineuse. Dans un autre mode de réalisation, le profil de champ optique de la cavité est affecté par le changement de longueur d'onde de la bande atténuée et le périphérique fonctionne comme émetteur de lumière à longueur d'onde réglable. Dans un autre mode de réalisation, au moins deux périodicités d'indice de réfraction sont intégrées au réflecteur, en supprimant les modes optiques parasites et en activant une modulation directe à haute vitesse de l'intensité de lumière émise par le périphérique.
PCT/IB2007/003510 2006-06-16 2007-06-06 Périphérique opto-électronique pour transfert de données à haute vitesse WO2008029283A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP07848895A EP2033282B1 (fr) 2006-06-16 2007-06-06 Périphérique opto-électronique pour transfert de données à haute vitesse

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US81405406P 2006-06-16 2006-06-16
US60/814,054 2006-06-16
US11/453,979 2006-06-16
US11/453,979 US7593436B2 (en) 2006-06-16 2006-06-16 Electrooptically Bragg-reflector stopband-tunable optoelectronic device for high-speed data transfer

Publications (2)

Publication Number Publication Date
WO2008029283A2 WO2008029283A2 (fr) 2008-03-13
WO2008029283A3 true WO2008029283A3 (fr) 2008-12-18

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EP (1) EP2033282B1 (fr)
RU (1) RU2452067C2 (fr)
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RU2507558C2 (ru) * 2012-05-03 2014-02-20 Федеральное бюджетное учреждение "3 Центральный научно-исследовательский институт Министерства обороны Российской Федерации" Электрооптическое устройство управления параметрами электрической цепи
JP2015079831A (ja) * 2013-10-16 2015-04-23 セイコーエプソン株式会社 発光装置および原子発振器
WO2016003456A1 (fr) * 2014-07-02 2016-01-07 Intel Corporation Montage électronique comprenant des dispositifs électroniques empilés
JP6835743B2 (ja) * 2015-06-09 2021-02-24 トランプ フォトニック コンポーネンツ ゲーエムベーハー 垂直共振器型面発光レーザ
RU2703922C2 (ru) * 2016-12-13 2019-10-22 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук Длинноволновый вертикально-излучающий лазер с внутрирезонаторными контактами
RU190371U1 (ru) * 2018-12-12 2019-06-28 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский ядерный университет "МИФИ" (НИЯУ МИФИ) Полупроводниковая гетероструктура для интегрального оптического модулятора рефрактивного типа на подложке inp
RU199498U1 (ru) * 2019-12-24 2020-09-03 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет ИТМО" (Университет ИТМО) Гетероструктура длинноволнового вертикально-излучающего лазера
DE102022117299A1 (de) * 2022-07-12 2024-01-18 Ams-Osram International Gmbh Laserbauteil und verfahren zum betreiben eines laserbauteils

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0618651A2 (fr) * 1993-03-31 1994-10-05 Fujitsu Limited Laser à émission de surface avec modulateur de la lumière
WO1999057789A1 (fr) * 1998-05-01 1999-11-11 The Regents Of The University Of California Laser a cavite verticale et a emission par la surface, presentant des moyens d'absorption optique a puits quantiques inctracavitaires
US20020074555A1 (en) * 2000-12-19 2002-06-20 Gyung Ock Kim Avalanche photodetector
US6611539B2 (en) * 2001-05-29 2003-08-26 Nsc Nanosemiconductor Gmbh Wavelength-tunable vertical cavity surface emitting laser and method of making same
US20050002604A1 (en) * 2003-07-03 2005-01-06 Optogone Resonant cavity enhanced photodetector, corresponding matrix and telecommunication system
US6865214B2 (en) * 2002-08-07 2005-03-08 Samsung Electronics Co., Ltd. Wavelength tunable VCSEL
US20050117623A1 (en) * 2003-12-01 2005-06-02 Nl-Nanosemiconductor Gmbh Optoelectronic device incorporating an interference filter
US7031360B2 (en) * 2002-02-12 2006-04-18 Nl Nanosemiconductor Gmbh Tilted cavity semiconductor laser (TCSL) and method of making same

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0618651A2 (fr) * 1993-03-31 1994-10-05 Fujitsu Limited Laser à émission de surface avec modulateur de la lumière
WO1999057789A1 (fr) * 1998-05-01 1999-11-11 The Regents Of The University Of California Laser a cavite verticale et a emission par la surface, presentant des moyens d'absorption optique a puits quantiques inctracavitaires
US20020074555A1 (en) * 2000-12-19 2002-06-20 Gyung Ock Kim Avalanche photodetector
US6611539B2 (en) * 2001-05-29 2003-08-26 Nsc Nanosemiconductor Gmbh Wavelength-tunable vertical cavity surface emitting laser and method of making same
US7031360B2 (en) * 2002-02-12 2006-04-18 Nl Nanosemiconductor Gmbh Tilted cavity semiconductor laser (TCSL) and method of making same
US6865214B2 (en) * 2002-08-07 2005-03-08 Samsung Electronics Co., Ltd. Wavelength tunable VCSEL
US20050002604A1 (en) * 2003-07-03 2005-01-06 Optogone Resonant cavity enhanced photodetector, corresponding matrix and telecommunication system
US20050117623A1 (en) * 2003-12-01 2005-06-02 Nl-Nanosemiconductor Gmbh Optoelectronic device incorporating an interference filter

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JIHE LV ET AL: "Monothically Integrated Long-Wavelength Tunable Photodetector", JOURNAL OF LIGHTWAVE TECHNOLOGY, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 26, no. 3, 1 February 2008 (2008-02-01), pages 338 - 342, XP011204237, ISSN: 0733-8724 *
KHAN A ET AL: "Voltage-controlled distributed Bragg reflectors for modulation and integrated power monitoring of vertical-cavity surface-emitting lasers", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 30, no. 25, 8 December 1994 (1994-12-08), pages 2146 - 2147, XP006001475, ISSN: 0013-5194 *

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EP2033282B1 (fr) 2012-10-31
WO2008029283A2 (fr) 2008-03-13

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