WO2008020386A1 - Amplificateur de puissance - Google Patents
Amplificateur de puissance Download PDFInfo
- Publication number
- WO2008020386A1 WO2008020386A1 PCT/IB2007/053193 IB2007053193W WO2008020386A1 WO 2008020386 A1 WO2008020386 A1 WO 2008020386A1 IB 2007053193 W IB2007053193 W IB 2007053193W WO 2008020386 A1 WO2008020386 A1 WO 2008020386A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- voltage
- power amplifier
- coupled
- transistor
- current
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/471—Indexing scheme relating to amplifiers the voltage being sensed
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/78—A comparator being used in a controlling circuit of an amplifier
Definitions
- Fig. 1 depicts a typical audio class D amplifier.
- Class-D audio amplifiers are becoming popular in multi-channel DVD receiver systems and in TV applications. The most important feature is high efficiency. Typical efficiency is well above 90% and may be achieved at full power. As a result a smaller heat sink or higher output power, with the same heat sink, is obtainable.
- the power amplifier further comprises a comparator for receiving the first current and the second current and for generating a voltage for controlling a pre-diver circuit, the pre-driver circuit controlling the first driver and the second driver.
- the two output currents, of the V/I converters are compared to each other.
- the comparator includes a hysteresis function, trigger and release reference, in this embodiment determined by a change of a conversion factor of the second voltage to current converter.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
L'invention se rapporte à un amplificateur de puissance comprenant un premier transistor (M1) comportant un premier canal conducteur, et un second transistor (M2) comportant un second canal conducteur, le premier canal conducteur étant relié en série avec le second canal conducteur et étant, en outre, relié à un nœud de sortie (2). L'amplificateur de puissance comprend en outre un premier circuit d'attaque (10) relié à une première électrode de commande du premier transistor (M1), un second circuit d'attaque (20) relié à une seconde électrode de commande du second transistor (M2), et un condensateur autoélévateur (Cboot) relié entre le nœud de sortie (2) et un nœud (1) du premier circuit d'attaque (10), ainsi qu'un premier circuit détecteur (40) relié en parallèle au condensateur autoélévateur (Cboot).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06118977 | 2006-08-16 | ||
EP06118977.5 | 2006-08-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008020386A1 true WO2008020386A1 (fr) | 2008-02-21 |
Family
ID=38776208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2007/053193 WO2008020386A1 (fr) | 2006-08-16 | 2007-08-10 | Amplificateur de puissance |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2008020386A1 (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106549576A (zh) * | 2017-01-12 | 2017-03-29 | 威海新北洋正棋机器人股份有限公司 | 一种电源电路及控制系统 |
CN108880203A (zh) * | 2018-07-31 | 2018-11-23 | 杭州国彪超声设备有限公司 | 一种超声电源驱动电路 |
GB2593279A (en) * | 2020-02-07 | 2021-09-22 | Cirrus Logic Int Semiconductor Ltd | Dual bootstrapping for an open-loop pulse width modulation driver |
US11190168B2 (en) | 2018-02-19 | 2021-11-30 | Cirrus Logic, Inc. | Dual bootstrapping for an open-loop pulse width modulation driver |
GB2585794B (en) * | 2018-02-19 | 2022-04-20 | Cirrus Logic Int Semiconductor Ltd | Dual bootstrapping for an open-loop pulse width modulation driver |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5365118A (en) * | 1992-06-04 | 1994-11-15 | Linear Technology Corp. | Circuit for driving two power mosfets in a half-bridge configuration |
EP0753934A1 (fr) * | 1995-07-13 | 1997-01-15 | STMicroelectronics S.r.l. | Amplificeteur de classe D à sortie unique et deux tensions d'alimentation |
US5627460A (en) * | 1994-12-28 | 1997-05-06 | Unitrode Corporation | DC/DC converter having a bootstrapped high side driver |
EP0945972A1 (fr) * | 1996-08-08 | 1999-09-29 | Kabushiki Kaisha Yaskawa Denki | Procede de commande pour onduleur |
-
2007
- 2007-08-10 WO PCT/IB2007/053193 patent/WO2008020386A1/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5365118A (en) * | 1992-06-04 | 1994-11-15 | Linear Technology Corp. | Circuit for driving two power mosfets in a half-bridge configuration |
US5627460A (en) * | 1994-12-28 | 1997-05-06 | Unitrode Corporation | DC/DC converter having a bootstrapped high side driver |
EP0753934A1 (fr) * | 1995-07-13 | 1997-01-15 | STMicroelectronics S.r.l. | Amplificeteur de classe D à sortie unique et deux tensions d'alimentation |
EP0945972A1 (fr) * | 1996-08-08 | 1999-09-29 | Kabushiki Kaisha Yaskawa Denki | Procede de commande pour onduleur |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106549576A (zh) * | 2017-01-12 | 2017-03-29 | 威海新北洋正棋机器人股份有限公司 | 一种电源电路及控制系统 |
CN106549576B (zh) * | 2017-01-12 | 2019-02-15 | 威海新北洋正棋机器人股份有限公司 | 一种电源电路及控制系统 |
US11190168B2 (en) | 2018-02-19 | 2021-11-30 | Cirrus Logic, Inc. | Dual bootstrapping for an open-loop pulse width modulation driver |
GB2585794B (en) * | 2018-02-19 | 2022-04-20 | Cirrus Logic Int Semiconductor Ltd | Dual bootstrapping for an open-loop pulse width modulation driver |
CN108880203A (zh) * | 2018-07-31 | 2018-11-23 | 杭州国彪超声设备有限公司 | 一种超声电源驱动电路 |
GB2593279A (en) * | 2020-02-07 | 2021-09-22 | Cirrus Logic Int Semiconductor Ltd | Dual bootstrapping for an open-loop pulse width modulation driver |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8040162B2 (en) | Switch matrix drive circuit for a power element | |
JP4095089B2 (ja) | 電圧測定装置 | |
US8599590B2 (en) | Detecting device for the midpoint voltage of a transistor half bridge circuit | |
US7701287B2 (en) | Voltage detection type overcurrent protection device for class-D amplifier | |
EP1119900A1 (fr) | Procedes et dispositif destines a reduire la conduction diodique d'un corps mosfet d'une structure demi-pont | |
US7579893B2 (en) | Mute circuit | |
US7705638B2 (en) | Switching control circuit with reduced dead time | |
US7432745B2 (en) | Gate driver circuit | |
US7456658B2 (en) | Circuit to optimize charging of bootstrap capacitor with bootstrap diode emulator | |
US9722593B2 (en) | Gate driver circuit | |
US20090085542A1 (en) | Drive system for power semiconductor device | |
WO2008020386A1 (fr) | Amplificateur de puissance | |
US7046040B2 (en) | Bootstrap driver | |
EP2087587A1 (fr) | Amplificateur de puissance | |
US20190081564A1 (en) | Method and circuitry for sensing and controlling a current | |
JPH11205123A (ja) | 高耐圧パワー集積回路 | |
JP2001045765A (ja) | 負荷駆動回路 | |
US7068486B2 (en) | Half-bridge circuit and method for driving the half-bridge circuit | |
JP2021078115A (ja) | Nmosスイッチ駆動回路及び電源装置 | |
US20050151568A1 (en) | Gate driver with level shift between static wells with no power supply | |
US5519357A (en) | Biasing arrangement for a quasi-complementary output stage | |
JP2000299624A (ja) | スイッチングデバイス | |
JPH11195971A (ja) | パワーデバイスの駆動回路 | |
US20040227193A1 (en) | Mosfet gate driver with a negative gate bias voltage | |
JPH09172358A (ja) | 高耐圧パワー集積回路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 07805381 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
NENP | Non-entry into the national phase |
Ref country code: RU |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 07805381 Country of ref document: EP Kind code of ref document: A1 |