WO2008017207A1 - A light emitting diode circuit having a plurality of critical voltages and a light emitting diode device - Google Patents

A light emitting diode circuit having a plurality of critical voltages and a light emitting diode device Download PDF

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Publication number
WO2008017207A1
WO2008017207A1 PCT/CN2006/001938 CN2006001938W WO2008017207A1 WO 2008017207 A1 WO2008017207 A1 WO 2008017207A1 CN 2006001938 W CN2006001938 W CN 2006001938W WO 2008017207 A1 WO2008017207 A1 WO 2008017207A1
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Prior art keywords
light emitting
emitting diode
substrate
diode
light
Prior art date
Application number
PCT/CN2006/001938
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French (fr)
Chinese (zh)
Inventor
Ming Hing Chen
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Helio Optoelectronics Corporation
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Application filed by Helio Optoelectronics Corporation filed Critical Helio Optoelectronics Corporation
Priority to PCT/CN2006/001938 priority Critical patent/WO2008017207A1/en
Publication of WO2008017207A1 publication Critical patent/WO2008017207A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Definitions

  • the invention relates to a high-power light-emitting diode, in particular to a high-voltage light-emitting diode chip with a resistive component, a submount high-voltage light-emitting diode chip, a diode light-emitting device and a multi-section threshold voltage. High voltage LED circuit. Background technique
  • LEDs Light-emitting diodes
  • Various LED display technologies have approached full color and high brightness, and LEDs have become more There is hope for a new generation of lighting that illuminates human life.
  • LEDs have such a high market growth rate, the main growth momentum is two points, the first is in the LED display backlight market LED and cold cathode ray tube (Codex Commi t tee on Food Label ling; CCFL The alternative between; the second is the replacement between LEDs and incandescent bulbs and fluorescent lamps in the general light source market.
  • LEDs have the advantages of environmental protection, energy saving and color performance.
  • the environmental protection regulations of “European Union banned mercury in 2006” is the main reason driving market growth.
  • the disclosed LED circuit can be used in a DC or AC power environment, but it is a discrete component and is also relatively large in size. It does not conform to the short and light design trend. .
  • U.S. Patent Publication No. 20050254243 which discloses a light-emitting diode circuit which is manufactured by a wafer process and can be reduced in size, but which can only operate in an AC voltage environment, and the same-polarity light-emitting diodes are connected in series. Connection, so when one of the LEDs fails, it will cause the remaining LEDs to continue to provide illumination, which is also inconvenient to use.
  • the operating voltage can only operate at a multiple of the threshold voltage (Vth) of the LED, and does not have the function of operating at a more detailed voltage.
  • Vth threshold voltage
  • the design of the LEDs in series is a single loop design, because This can only operate in a single high voltage (Vth* series number of LEDs N) environment, without the characteristics of multi-segment threshold voltage operation.
  • the object of the present invention is to overcome the defects of the existing light emitting diode circuit and the diode light emitting device thereof, and to provide a high voltage light emitting diode chip with a resistive element, a submount high voltage light emitting diode chip, and a diode.
  • the illuminating device and the high-voltage LED circuit with multi-section threshold voltage, through the parallel circuit and the resistance design of the impedance component, enable the diode to operate in any specific DC or AC voltage environment, and have multi-segment threshold voltage starting characteristics. Thereby, the convenience of use of the light-emitting two-body circuit can be improved, and thus it is more suitable for practical use.
  • a high voltage light emitting diode chip with an impedance element includes: a first substrate; at least one first light emitting diode formed on the first material; and at least one impedance element formed on the The first substrate is electrically connected in series to one end of the first light emitting diode.
  • the technical problems of the present invention and solving the technical problems can be further achieved by the following technical measures.
  • the aforementioned high voltage light emitting diode chip, wherein the impedance element is a diode element or a resistance element.
  • a high voltage light emitting diode chip with an impedance element comprising: a first base At least one first light emitting diode is formed on the first substrate; at least one second light emitting diode is formed on the first substrate, and the polarity of the second light emitting diode is opposite to the first light emitting diode. And the second light emitting diode is connected in parallel with the first light emitting diode; and at least one impedance element is formed on the first substrate and electrically connected in series to one side of the first light emitting diode or the second light emitting diode.
  • the object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures.
  • a submount high voltage light emitting diode chip includes: a second substrate on which a plurality of wires are formed; at least one LED chip is Formed on the second substrate, having: a first substrate; and at least one first light emitting diode formed on the first substrate and electrically connected to the wires; and at least one impedance element formed on The impedance element is electrically connected to the wires and electrically connected in series to one side of the first light emitting diode.
  • PCB printed circuit board
  • silicon substrate silicon substrate
  • ceramic ceramic
  • the ceramic is selected from the group consisting of alumina (A1 2 0 3 ), aluminum nitride (A1N), beryllium oxide (BeO), low temperature co-fired ceramic (Low Temperature)
  • HTCC Ceramic
  • the invention discloses a sub-mounting high-voltage light-emitting diode, which comprises: a second substrate, wherein the second substrate is formed with a plurality of wires; at least one light-emitting diode The wafer is formed on the second substrate, and has: a first substrate; and at least one first light emitting diode formed on the first substrate and electrically connected to the wires; at least one second LED Formed on the first substrate or the second substrate, the polarity of the second LED is opposite to the first LED and the second LED is connected in parallel with the first LED and electrically And the at least one impedance component is formed on the second substrate, the impedance component is electrically connected to the wires and electrically connected in series to one side of the first LED or the second LED.
  • the object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures.
  • the ceramic is selected from the group consisting of alumina (A1 2 0 3 ), aluminum nitride (A IN), yttrium oxide (BeO), low-temperature co-fired ceramics, and high temperature.
  • the impedance element is a diode element, a resistance element or a capacitive element.
  • a diode lighting device includes: a body structure having: a body in which a wafer base is formed; and at least two lead frames, each of which is independent and not mutually Electrically coupled, each of the lead frames is fixed on the body; at least one high-voltage LED chip having an impedance component, comprising: a first substrate fixed in the wafer base; at least one a first light emitting diode is formed on the first substrate, one end of which is electrically connected to a lead frame by a first wire; and at least one impedance element is formed on the first substrate, and one end of the first substrate is electrically Connected to the other end of the first LED, and the other end of the impedance element is electrically connected to the other lead frame by a second wire; a light-receiving layer is completed in the wafer base
  • the wires are connected to the high voltage light emitting diode chip; and a lens is coupled to the body and covers the wafer base.
  • the high voltage light emitting diode chip with the impedance element further includes at least one second light emitting diode formed on the first substrate, the polarity of the second light emitting diode and the first light emitting The diodes are opposite and parallel to each other.
  • the high voltage light emitting diode chip with the impedance element includes at least one red, one blue and one green diode chip.
  • the high-voltage light-emitting diode chip with the impedance element is at least two kinds of light-emitting colors, and the light-trapping layer covering the high-voltage light-emitting diode chip with the impedance element is further doped with a diffusion. powder.
  • the high-voltage light-emitting diode chip with the impedance element is a blue light-emitting high-voltage light-emitting diode chip with an impedance element, and the light-receiving light is covered on the high-voltage light-emitting diode chip with the impedance element.
  • the layer is further covered with a lightwave conversion layer.
  • the light-trapping layer is a transparent resin or a transparent colloid.
  • the lens is made of a glass or a transparent plastic or a silica gel.
  • a diode lighting device includes: a body structure having: a body having a wafer base formed therein; and at least two lead frames, each of the lead frames being independent and mutually Non-electrical connection, and each of the lead frames is fixed on the body; at least once adhered to the base
  • the light-emitting diode chip comprises: a first substrate fixed in the wafer base; at least one first light-emitting diode formed on the first substrate, one end of which is electrically connected by a first wire Connected to a lead frame; and at least one impedance element formed on the second substrate, one end of which is electrically connected in series to the other end of the first LED, and the other end of the impedance element is by a second
  • the wire is electrically connected to the other lead frame; a light-receiving layer is disposed on the high-voltage light-emitting diode chip of the adhesive substrate on the wafer base
  • the sub-adhesive substrate high-voltage light-emitting diode chip further includes at least one second light-emitting diode formed on the first substrate, and the polarity of the second light-emitting diode is different from the first one.
  • the light emitting diodes are opposite and parallel to each other.
  • the sub-adhesive base high voltage light emitting diode chip comprises at least one red, one blue and one green diode chip.
  • the sub-adhesive base high-voltage light-emitting diode chip is a light-receiving layer having at least two kinds of light-emitting colors and covering the high-voltage light-emitting diode chip of the adhesive substrate, further incorporating Diffusion powder.
  • the aforementioned diode light-emitting device wherein the sub-adhesive base high-voltage light-emitting diode chip 'is a blue-emitting sub-adhesive base high-voltage light-emitting diode chip, and covers the sub-adhesive base high-voltage light-emitting diode chip.
  • the light taking layer is further covered with a light wave conversion layer.
  • the light-trapping layer is a transparent resin or a transparent colloid.
  • the lens is made of a glass or a transparent plastic or a silica gel.
  • a diode lighting device includes: a body structure having: a body in which a wafer base is formed; and at least two lead frames, each of which is independent and not mutually Electrically connected, each of the lead frames is fixed on the body; at least one LED chip comprises: a first substrate fixed in the wafer base; and at least one first photodiode Formed on the first substrate, one end of which is electrically connected to a dedicated wire frame by a first wire; at least one impedance component is fixed in the wafer base, and one end thereof is electrically connected in series The other end of the light-emitting diode, the other end of the impedance element is electrically connected to the other lead frame by a second wire; a light-receiving layer, the wire bonding is completed in the wafer base
  • the LED chip and the impedance element; and a lens are coupled to the body and overlying the wafer base.
  • the object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures.
  • the diode light emitting device, wherein the LED chip further comprises at least one second light emitting diode formed on the first substrate, the second light emitting diode having a polarity opposite to the first light emitting diode and mutual in parallel.
  • the LED chip comprises at least one red, one blue and one green diode chip.
  • the light emitting diode chip has at least two kinds of light emitting colors, and the light extracting layer covering the light emitting diode chip is further doped with a diffusion powder.
  • the light-emitting diode chip is a blue light-emitting diode chip, and the light-trapping layer covering the light-emitting diode chip is further covered with a light wave conversion layer.
  • the light-trapping layer is a transparent resin or a transparent colloid.
  • the lens is made of a glass or a transparent plastic or a silica gel.
  • a high voltage light emitting diode circuit having a multi-segment threshold voltage according to the present invention is an environment operating in a DC voltage source, comprising: ⁇ LEDs connected in series with each other; and q impedance elements, each of the impedances The components are connected in parallel to the light emitting diodes in a one-to-one manner; wherein the value is an integer greater than or equal to two, and the value of the q is less than or equal to the value of the P.
  • the object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures.
  • the aforementioned high voltage light emitting diode circuit having a plurality of threshold voltages, wherein the impedance element is a diode element or a resistance element.
  • the aforementioned high voltage light emitting diode circuit having a plurality of threshold voltages is a light emitting diode integrated circuit having a plurality of critical voltages.
  • a high voltage light emitting diode circuit having a plurality of threshold voltages is operated in an environment of an alternating voltage source, comprising: p first light emitting diodes connected in series with each other; q first impedance elements, each a first impedance element is connected in parallel to a first light emitting diode in a one-to-one manner; m second light emitting diodes connected in series are connected in parallel to the first light emitting diodes connected in series with each other, and the second The polarity of the light emitting diode is opposite to the first light emitting diodes; and n second impedance elements, each of the second impedance elements being connected in parallel to a second light emitting diode in a one-to-one manner; wherein The m is an integer greater than or equal to two, the q is less than or equal to the p integer, and the n is an integer less
  • the object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures.
  • the high voltage light emitting diode circuit having a plurality of threshold voltages, wherein the first impedance element is a diode element or a resistance element or a capacitive element.
  • the foregoing high voltage LED circuit having a plurality of threshold voltages, wherein the second impedance component is a diode component or a resistor component or a capacitive component.
  • the aforementioned high voltage light emitting diode circuit having a plurality of threshold voltages is a light emitting diode integrated circuit having a plurality of critical voltages.
  • the present invention provides a high voltage light emitting diode chip having an impedance element, comprising: a first substrate; at least one first light emitting diode formed on the first substrate; and at least one impedance element Formed on the first substrate and electrically connected in series to one end of the first light emitting diode.
  • the present invention further provides a high voltage light emitting diode chip having an impedance element, comprising: a first substrate; at least one first light emitting diode formed on the first substrate; at least one a second light emitting diode is also formed on the first substrate, the second light emitting diode has a polarity opposite to the first light emitting diode and the second light emitting diode is connected in parallel with the first light emitting diode; at least one impedance element is formed on the first substrate And electrically connected in series to one side of the first light emitting diode or the second light emitting diode.
  • the present invention further provides a submount type high voltage light emitting diode chip, comprising: a second substrate; the second substrate is formed with a plurality of wires; at least one The light emitting diode chip is formed on the second substrate and has: a first substrate; and at least one first light emitting diode formed on the first substrate and electrically connected to the wires; and at least one impedance component The impedance element is electrically connected to the wire and electrically connected in series to one side of the first light emitting diode.
  • the present invention further provides a sub-adhesive substrate high-voltage light-emitting diode chip, comprising: a second substrate; the second substrate is formed with a plurality of wires; at least one light is emitted
  • the diode chip is formed on the second substrate and has: a first substrate; and at least one first light emitting diode formed on the first substrate and electrically connected to the wires; at least one second light emitting a diode formed on the first substrate or the second substrate, the second LED having a polarity opposite to the first LED and the second LED being electrically connected in parallel with the first LED; and at least one impedance component
  • the impedance element is electrically connected to the wires and electrically connected in series to one side of the first light emitting diode or the second light emitting diode.
  • the present invention further provides a diode light emitting device, comprising: a body structure, at least one high voltage light emitting diode chip having an impedance element, a light taking layer, and a lens; wherein:
  • the body structure has: a body, a wafer base is formed in the body; at least two lead frames, each lead frame is independent and non-electrically connected, and each wire The frame is fixed to the body.
  • the high-voltage light-emitting diode chip with a resistive element comprises: a first substrate fixed in the wafer base; at least one first light-emitting diode formed on the first substrate, one end of which is a wire is electrically connected to the first lead frame; and at least one impedance element is formed on the first substrate, one end of which is electrically connected in series to the other end of the first light emitting diode, and the other end of the impedance element is The two wires are electrically connected to the other lead frame.
  • the light-receiving layer is used to cover the high-voltage light-emitting diode crystal piece with the impedance element connected to the completed wire in the wafer base. a lens for bonding to the body and covering the wafer base.
  • the present invention further provides a diode light-emitting device comprising: a bulk structure, a high-voltage light-emitting diode chip bonded to the substrate at least once, a light-receiving layer, and a lens.
  • the base structure has: a body, a wafer base is formed in the body; and at least two lead frames, each lead frame is independent and non-electrically connected, and each lead frame is fixed on the body on.
  • the adhesive high-voltage light-emitting diode chip of the substrate comprises: a first substrate fixed in the wafer base; at least one first light-emitting diode formed on the first substrate, one end of which is a wire is electrically connected to a lead frame; and at least one impedance element is formed on the second substrate, one end of which is electrically connected in series to the other end of the first light emitting diode, and the other end of the impedance element is by a second
  • the wire is electrically connected to another lead frame.
  • the light-receiving layer covers the sub-adhesive substrate high-voltage light-emitting diode chip in the wafer base on which the wire bonds are completed.
  • a lens is coupled to the body and overlies the wafer base.
  • the present invention again provides a diode lighting device comprising: a structure, at least one LED chip, at least one impedance element, a light extraction layer, and a lens.
  • the base structure has: a body, a wafer base is formed in the body; and at least two lead frames, each lead frame is independent and non-electrically connected, and each lead frame is fixed on the body on.
  • the LED chip comprises: a first substrate fixed in the wafer base; and at least one first light emitting diode formed on the first substrate, one end of which is electrically connected by a wire Connected to a lead frame.
  • the impedance element is fixed in the base of the wafer, one end of the impedance element is electrically connected to the other end of the first light emitting diode, and the other end of the impedance element is electrically connected to the other lead frame by a second wire.
  • the light-trapping layer covers the light-emitting diode chip and the impedance element in the wafer base on which the wire connections are completed; and the lens is coupled to the body and covers the wafer base.
  • the present invention further provides an LED circuit having a plurality of threshold voltages, which is operated in an environment of a DC voltage source, comprising: p LEDs connected in series with each other; and q The impedance element, each impedance element is connected in parallel to the light emitting diodes in a one-to-one manner, wherein the value of P is an integer greater than or equal to two, and the value of q is a value less than or equal to p.
  • the present invention further provides an LED circuit having a plurality of threshold voltages, which is operated in an environment of an AC voltage source, and includes: a first LED that is connected in series with each other; q a first impedance element, each of the first impedance elements being connected in parallel in a one-to-one manner a first light emitting diode; m second light emitting diodes connected in series are connected in parallel to the first light emitting diodes connected in series with each other, and the polarities of the second light emitting diodes are opposite to the first light emitting diodes And n ⁇ second impedance elements, each of the second impedance elements being connected in parallel to a second one of the second light emitting diodes, wherein p and 'm are integers greater than or equal to two, and q is less than Or equal to p integer, and n is an integer less than or equal to m.
  • the high-voltage light-emitting diode chip with the impedance element, the submount high-voltage light-emitting diode chip, the diode light-emitting device and the high-voltage light-emitting diode circuit with multi-section threshold voltage have at least the following advantages and advantages. Efficacy:
  • the present invention adopts the resistance matching design of the impedance component, so that the power supply specification that can be used in the LED circuit is no longer limited to a specific voltage (Vth) multiple (ie, 3V, 6V, 9V, 12, etc.), which can be greatly Improve the range of applicable voltage specifications and is ideal for practical use.
  • Vth specific voltage
  • the invention adopts a parallel circuit design.
  • the remaining LEDs that have not failed can still maintain normal illumination, and the convenience of use can be greatly improved.
  • the present invention employs multi-stage design threshold voltage
  • the light emitting diode may be made to reduce the cost of the product in accordance with the critical-out design,, A
  • the present invention relates to a high voltage light emitting diode circuit having a plurality of threshold voltages and a diode light emitting device thereof, and more particularly to a high voltage light emitting diode chip with a resistive element and a submount type submount.
  • the high-voltage light-emitting diode chip includes: a first substrate; at least one first light-emitting diode formed on the first substrate; and at least one impedance element formed on the first substrate and electrically connected in series to the first light-emitting device One end of the diode.
  • the high voltage light emitting diode chip can be further incorporated into a diode light emitting device.
  • the high voltage LED chip can be converted to form a high voltage LED circuit with multiple threshold voltages.
  • the high-voltage light-emitting diode chip with the impedance component, the diode light-emitting device and the high-voltage light-emitting diode circuit with multi-section threshold voltage, and the resistance design of the parallel circuit and the impedance component enable the diode to operate on any specific DC or AC voltage In the environment, and having a multi-stage threshold voltage start-up characteristic, the use convenience of the light-emitting two-body circuit can be improved.
  • the invention has the above-mentioned many advantages and practical values, and has great improvements in product structure and function, has significant advances in technology, and has produced useful and practical effects, and is more existing than the existing LED circuit. And its diode illuminating device has enhanced outstanding effect, which is more suitable for practical use, and has extensive industrial use value, and is a novel, progressive and practical new design.
  • Figure 1 is a cross-sectional view showing the structure of an embodiment of a high voltage light emitting diode chip having an impedance element of the present invention.
  • Fig. 2 is a cross-sectional view showing the structure of an embodiment in which a first light emitting diode is further connected in series with different impedance elements, in a high voltage light emitting diode chip with an impedance element according to a first embodiment and a second embodiment of the present invention. .
  • Figure 3 is a cross-sectional view showing the structure of an embodiment of a sub-adhesive substrate high voltage light emitting diode chip of the present invention.
  • FIG. 4 is a cross-sectional view showing the structure of an embodiment of a diode light-emitting device of the present invention.
  • Figure 5 is a cross-sectional view showing the structure of an embodiment of a diode lighting device of the present invention.
  • Figure 6 is a cross-sectional view showing the structure of an embodiment of a diode light-emitting device of the present invention.
  • Figure 7 is a schematic illustration of an embodiment of a light emitting diode circuit having a multi-segment threshold voltage in accordance with the present invention.
  • Figure 8 is a schematic illustration of a light emitting diode circuit having a multi-segment threshold voltage in accordance with the present invention.
  • Fig. 9 is a graph showing voltage-current characteristics of a light-emitting diode having a plurality of threshold voltages according to an eighth embodiment of the present invention.
  • Figure 10 is a schematic illustration of an embodiment of a light emitting diode circuit having a multi-segment threshold voltage in accordance with the present invention.
  • Figure 11 is a schematic illustration of an embodiment of a light emitting diode circuit having a multi-segment threshold voltage in accordance with the present invention.
  • Figure 12 is a schematic illustration of an embodiment of a light emitting diode circuit having a multi-segment threshold voltage in accordance with the present invention.
  • Figure 13 is a graph showing voltage-current characteristics of a light-emitting diode having a plurality of threshold voltages according to a ninth embodiment of the present invention.
  • High-voltage LED chip with impedance element 200 seat structure 210: body
  • wafer base 220 first lead frame
  • second wire 240 light taking layer
  • FIG. 1 there is shown a cross-sectional view showing the structure of an embodiment of a high voltage light emitting diode chip having an impedance element of the present invention.
  • a high-voltage light-emitting diode chip with an impedance element is in an environment of a DC voltage source, comprising: a first substrate 10, at least one first LED 20, and at least one Impedance element 30; wherein:
  • the first substrate 10 is made of an insulating and heat resistant material.
  • the first light emitting diode 20 is formed on the first substrate 10 and has: an N-type semiconductor layer 21. an ohmic contact 22, a light emitting layer 23, a P-type semiconductor layer 24, a transparent current diffusion layer 25, and an insulating layer. And an interconnecting metal wire 27, wherein the first light emitting diode 20 is a light emitting diode having a multi-quantum well diode (Mul t i- Quantum Wel; MQW) structure, and further having an electron black layer (Electron blacking layer) )structure.
  • MQW multi-quantum well diode
  • the impedance element 30 is formed on the first substrate 10 and electrically connected in series with one end of the first LED 20, wherein the impedance element 30 is a diode element, and the device is: N-type semiconductor layer 21, ohmic contact 22, ⁇ Klee diode 31, insulating layer 26 and interconnect metal wires 27.
  • the impedance element 30 can also be a resistive element, and the diode element can be practically used as a PN diode (Schiffley diode), a heterojunction diode (semiconductor hetero junct ion), organic Light-emitting diode (organic electro-luminescent material s) or polymer electro-luminescent ma ter ia ls, and the resistance element can be used in Europe Ohmic contact res is tance or film wound resistance.
  • the high-voltage LED chip with the impedance element of the first embodiment, wherein the first LED 20 is further connected in parallel with the second LED 40 of opposite polarity, can operate in an environment of an AC voltage source, and includes: a first substrate 10, at least one first LED 20, at least one impedance element 30, and at least one second LED 40; wherein:
  • the first substrate 10 is made of an insulating and heat resistant material.
  • the first light emitting diode 20 is formed on the first substrate 10 and has: an N-type semiconductor layer 21, an ohmic contact 22, a light emitting layer 23, a P-type semiconductor layer 24, a transparent current diffusion layer 25, and an insulating layer 26. And an interconnecting metal wire 27, wherein the first light emitting diode 20 is a light emitting diode having a multiple quantum well diode structure, and further has an electron blacking layer structure.
  • the second LED 40 is formed on the first substrate 10.
  • the second LED 40 has a polarity opposite to that of the first LED 20, and the second LED 40 is connected in parallel with the first LED 20.
  • the impedance element 30 is formed on the first substrate 10 and electrically connected in series with one side of the first LED 20 or the second LED 40.
  • the impedance element 30 includes: an N-type semiconductor layer 21 and an ohmic contact 22 , dielectric layer 32, insulating layer 26 and interconnect metal wires 27.
  • the impedance element 30 can be a diode element, a resistance element or a capacitive element, and the diode element can be practically a PN diode, a Schockley diode, a heterojunction diode (semiconductor junction) On), organic electro-luminescent 'mater ia ls or polymer electro-luminescent mater ia ls, and ohmic contact res is tance ) or film wound resistors.
  • a high voltage light emitting diode chip with an impedance element according to a first embodiment and a second embodiment of the present invention, wherein the first light emitting diode further has a structural cross-sectional view of an embodiment in which different impedance elements are serially connected.
  • the high voltage light emitting diode chip with the impedance element of the first embodiment and the second embodiment of the present invention can achieve a plurality of different operating voltage characteristics by connecting a plurality of impedance elements 30 in series.
  • the impedance element 30 and the light emitting diode are made into a single body, which makes the high voltage light emitting diode more convenient to use and replace.
  • FIG. 3 is a cross-sectional view showing the structure of an embodiment of a sub-adhesive high-voltage light-emitting diode chip of the present invention.
  • the high voltage light emitting diode chip of this embodiment is operated in an environment of a DC voltage source, and comprises: a second substrate 50, at least one The LED chip 400 and the at least one impedance element 30 are:
  • the second substrate 50 is formed with a plurality of wires 51 on one surface thereof, and a solder bump 52 is disposed between the wires 51 and the interconnecting metal wires 27, wherein the second substrate 50 can be practically printed circuit boards.
  • PCB printed circuit boards
  • silicon substrate and ceramic can be divided into aluminum oxide (A1203), aluminum nitride (A1N), beryllium oxide (Be0), low temperature co-fired ceramics and high temperature co-fired ceramics.
  • the LED chip 400 is formed on the second substrate 50 and has: a first substrate 10; and at least one first LED 20 formed on the first substrate 10 and electrically connected to the LED substrate 400. Wire 51.
  • the first light emitting diode 20 is formed on the first substrate 10 and has: an N-type semiconductor layer 21, an ohmic contact 22: a light emitting layer 23, a P-type semiconductor layer 24, a transparent current diffusion layer 25, an insulating layer 26, and
  • the interconnecting metal wire 27 is a light emitting diode having a multiple quantum well diode structure, and further having an electro blackening layer structure.
  • the impedance element 30 is formed on the second substrate 50, which is electrically connected to the wire 51 and electrically connected in series to the side of the first LED 20. Further, the impedance element 30 may be a diode element including: an N-type semiconductor layer 21 and a P-type semiconductor layer 24. Further, the impedance element 30 can also be a resistive element.
  • a diode element may be a PN diode (semiconductor n junct ion), a Schockley diode, a heterojunction diode, or an organic light-emitting diode (organic elec tro-luminescent ma ter ia ls) or Polymer electro-luminescent mater ia ls, and the ohmic contact res is tance or thin film wound resistor can be used for the resistive component.
  • PN diode semiconductor n junct ion
  • Schockley diode a heterojunction diode
  • organic light-emitting diode organic elec tro-luminescent ma ter ia ls
  • Polymer electro-luminescent mater ia ls Polymer electro-luminescent mater ia ls
  • the sub-adhesive substrate high voltage light emitting diode chip of the third embodiment wherein the first light emitting diode 20 is further connected in parallel with the second light emitting diode 40 of opposite polarity, can be operated in an environment of an alternating current voltage source.
  • the sub-adhesive substrate high-voltage LED chip of the embodiment includes: a second substrate 50, at least one LED chip 400, at least one LED 12, and at least one impedance element 30; wherein:
  • the second substrate 50 is formed with a plurality of wires 51 on one surface thereof, and a solder bump 52 is disposed between the wires 51 and the interconnecting metal wires 27, wherein the second substrate 50 can be practically a printed circuit board ( One of the groups consisting of PCB), silicon substrate and ceramic.
  • the ceramic may be selected from the group consisting of aluminum oxide, aluminum nitride, cerium oxide, low temperature co-fired ceramics, and high temperature co-fired ceramics.
  • the LED chip 400 is formed on the second substrate 50 and has: a first substrate 10; and at least one first LED 20 formed on the first substrate 10 and electrically connected to the LED substrate 400.
  • the first light emitting diode 20 is formed on the first substrate 10, and is electrically connected to the wire 51, and has: an N-type semiconductor layer, an ohmic contact 22, a light emitting layer 23, and a P-type half.
  • the second LED 40 is formed on the first substrate 10 or the second substrate 50 (as shown in the fourth embodiment).
  • the polarity of the second LED 40 is opposite to that of the first LED 20, and the second The LED 40 is electrically connected in parallel with the first LED 20.
  • the structure, characteristics and efficacy of the second light emitting diode 40 are the same as those of the first light emitting diode 20, and therefore will not be described again.
  • the impedance element 30 is formed on the second substrate 50, and is electrically connected to the wire 51 and electrically connected in series to one side of the first LED 20 or the second LED 40.
  • the impedance element 30 includes an N-type semiconductor layer 21, a P-type semiconductor layer 24, a dielectric layer 32, an insulating layer 26, and a wire 51.
  • the impedance element 30 can also be a diode element, a resistance element or a capacitive element.
  • the diode element can be practically used as a PN diode, a Schockley diode, a semiconductor heterojunct ion, an organic electro-luminescent mater ia ls or a polymer light-emitting diode. (polymer electro-luminescent mater ia ls).
  • the ohmic contact resistance Ohmic contact r e s i s t ance
  • the film wound wire type resistor can be used for the resistance element.
  • FIG. 4 there is shown a cross-sectional view of an embodiment of a diode lighting device of the present invention.
  • the diode light-emitting device of the present embodiment is operated in a constant-current voltage source environment, comprising: a body structure 200, at least one high-voltage light-emitting diode chip 100 having an impedance element, a light-harvesting layer 240, and a lens 250; among them:
  • the above-mentioned base structure 200 has: a body 210, at least two lead frames, such as a first wire frame 220 and a second lead frame 230.
  • the body 210 has a wafer base 211 formed therein, and the wafer base 211 is used to carry the high voltage LED chip 100 with impedance elements.
  • the first lead frame 220 and the second lead frame 230 are made of a metal material, and each of the lead frames is independently and electrically non-electrically connected, and each of the lead frames is fixed to the body 210.
  • the high-voltage LED chip 100 with the impedance element can be specially made of red, blue and green diode chips. Combined, but not limited to three color diode chips.
  • the impedance element 30 is formed on the first substrate 10, one end of which is electrically connected in series to the other end of the first LED 20, and the other end of the impedance element 3G is electrically connected by the second wire 231. Connected to the second lead frame 230.
  • the light-receiving layer 240 is a high-transparent transparent resin or a transparent colloid, which is used to cover the high-voltage LED chip 100 with the impedance component connected to the completed wire in the wafer base 211.
  • the light-receiving layer 240 may further incorporate a diffusion powder; in addition, a light-wave conversion layer may be further formed on the light-receiving layer 240.
  • the lens 250 is coupled to the body 210 and covers the wafer base 211 to generate an optimal light field distribution effect when the high-voltage LED chip 100 having the impedance element emits light, and the lens 250 may be glass. Transparent plastic or silicone material.
  • the high-voltage LED chip 100 with the impedance component further includes at least one second LED 40 (such as the structure of the second embodiment) formed on the first substrate 10, and the second LED 40.
  • the polarities are opposite to the first light emitting diodes 20 and are connected in parallel to operate in an AC power environment.
  • a diode lighting device of the present invention comprises: a body structure 200, a high-voltage LED chip 300 with at least one adhesion to the substrate, a light-receiving layer 240, and a lens 250;
  • the above-mentioned base structure 200 has: a body 210, at least two lead frames, such as a first wire frame 220 and a second lead frame 230.
  • the body 210 is formed with a wafer base 211 formed in the body 210, and the wafer base 211 is used to carry the sub-adhesive base high voltage light emitting diode chip 300.
  • the first lead frame 220 and the second lead frame 230 are made of a metal material. Each lead frame is independent and non-electrically connected, and each lead frame is fixed on the body 210.
  • the sub-adhesive substrate high-voltage LED chip 300 (the structure of the third embodiment of the present invention) comprises: a first substrate 10, at least one first LED 20 and at least one impedance element 30.
  • the first substrate 10 is fixed in the wafer base 211, and the first LED 20 is formed on the first substrate 10, and one end thereof is electrically connected to a first wire by a first wire 221
  • the rack 220 wherein the sub-adhesive base high voltage LED chip 300 is particularly combinable by red, blue and green diode chips, but is not limited to three color diode chips.
  • the impedance element 30 is formed on the second substrate 50, one end of which is electrically connected to the other end of the first LED 20, and the other end of the impedance element 30 is electrically connected to the second by a second wire 231.
  • Lead frame 230 is formed on the second substrate 50, one end of which is electrically connected to the other end of the first LED 20, and the other end of the impedance element 30 is electrically connected to the second by a second wire 231.
  • the light-receiving layer 240 is a high-transparent transparent resin or a transparent colloid, which is a sub-adhesive base high-voltage light-emitting diode for covering the completed wire connection in the wafer base 211.
  • the light-receiving layer 240 may be further doped with a diffusion powder; in addition, a light-wave conversion layer may be further formed on the light-receiving layer 240.
  • the lens 250 is coupled to the body 210 and covers the wafer base 211 so that the sub-adhesive base high-voltage LED chip 300 can produce an optimal light field distribution effect, and the lens 250 can be Made of glass, clear plastic or silicone.
  • the above-mentioned sub-adhesive substrate high-voltage LED chip 300 further includes at least one second light-emitting diode 40 (such as the structure of the fourth embodiment) formed on the first substrate 10 or the second substrate 50, and The second LEDs 40 are opposite in polarity to the first LEDs 20 and are connected in parallel to operate in an AC power environment.
  • at least one second light-emitting diode 40 such as the structure of the fourth embodiment
  • a diode lighting device of the present invention comprises: a body structure 200, at least one LED chip 400, at least one impedance element 30, a light extraction layer 240, and a lens 250;
  • the above-mentioned base structure 200 has: a body 210, at least two lead frames such as a first wire guide 220 and a second lead frame 230.
  • the body 210 has a wafer base 211 formed therein, and the wafer base 211 is used to carry the LED chip 400.
  • the first lead frame 220 and the second lead frame 230 are made of a metal material, and each of the lead frames is independently and electrically non-electrically connected, and each of the lead frames is fixed to the body 210.
  • the LED chip 400 includes: a substrate 10 fixed in the wafer base 211; and at least one first LED 20 formed on the first substrate 10, one end of which is A wire 221 is electrically connected to the first lead frame 220.
  • the LED chip 400 includes at least one red, one blue and one green diode wafer. Or, the LED chip 400 has at least two kinds of illuminating colors, and the light absorbing layer covering the LED chip 400 is further doped with a diffusion powder. Or, the LED chip 400 is a blue light emitting diode chip 400, and the light-trapping layer covering the LED chip 400 is further covered with a light conversion layer.
  • the impedance element 30 is fixed in the crystal 'chip base 211, one end of which is electrically connected in series to the other end of the first light emitting diode 20, and the other end of the impedance element 30 is electrically connected by a second wire 231.
  • the impedance element 30 can be a diode element or a resistive element.
  • the diode element is a PN diode (semiconductor n junct ion), a Scliockley diode, a heteroconductor tor ter ter junct ion, an organic electro-luminescent mater ia Ls) or a polymer electroluminescent Mater ial s).
  • the resistive element is either an Ohmic contact res is tance or a thin film wound resistor.
  • the light-receiving layer 240 is a high-transparent transparent resin or a transparent colloid, which is used to cover the completed wire-bonded LED tube 400 in the pedestal 211.
  • the light layer 240 may further incorporate a diffusion powder. Further, a light wave conversion layer can be formed on the light extraction layer 240.
  • the lens 250 is coupled to the body 210 and covers the wafer base 211 to produce an optimal light field distribution effect when the LED chip 400 emits light.
  • the lens 250 may be glass, transparent plastic or silicone. Material.
  • the LED chip 400 further includes at least one second LED 40 formed on the first substrate 10, and the second LED 40 has a polarity opposite to that of the first LED 20 and is connected in parallel with each other. Operates in an AC power environment.
  • FIG. 7 there is shown a schematic diagram of an embodiment of a multi-segment threshold voltage LED circuit of the present invention.
  • An LED circuit having a multi-segment threshold voltage is operated in an environment of a DC voltage source, comprising: p first LEDs 20 and q impedance elements 30 connected in series; wherein:
  • the p-first first light-emitting diode 20 is a light-emitting diode having a multiple quantum well diode structure, and further has an electro blackening layer structure. Further, the light emitting diode having a multiple quantum well diode structure further has an electro blackening layer structure.
  • PN diode Semiconductor pn junct ion
  • Schockley diode semiconductor hetero junct ion
  • organic electro-luminescent material s or polymer e lectro-luminescent mater Ia ls organic electro-luminescent material s or polymer e lectr
  • FIG. 8 a schematic diagram of a multi-segment threshold voltage LED circuit of the present invention.
  • the value of p is an integer greater than or equal to two
  • the value of q is less than the value of p (as shown in Figure 8) or equal to the value of p (as shown in Figure 7).
  • the high-voltage light-emitting diode circuit of the present embodiment having a multi-stage threshold voltage can be fabricated as a light-emitting diode integrated circuit having a plurality of segment threshold voltages.
  • FIG. 9 is a light-emitting diode with multiple threshold voltages according to the eighth embodiment of the present invention.
  • the first LED is activated, and when the voltage reaches the second threshold voltage (Vth2), the first and second LEDs are activated, when the voltage reaches At the third threshold voltage (Vth3), the first, second and third light-emitting diodes are all activated.
  • Vth2 the second threshold voltage
  • Vth3 At the third threshold voltage
  • the resistance matching design of the impedance element enables the light-emitting diode circuit to have multiple threshold voltage start-up characteristics, so that no additional use is required. By controlling the switching circuit, the effect of segmenting the LED illumination can be achieved, and the manufacturing cost can be further reduced.
  • FIG. 10 it is a schematic diagram of an embodiment of a light-emitting diode circuit having a multi-segment threshold voltage according to the present invention.
  • An LED circuit having a multi-segment threshold voltage is operated in an environment of an AC voltage source, comprising: p first LEDs 20 connected in series with each other, q first impedance elements 34, m a second light emitting diode 40 and n second impedance elements 36 connected in series with each other; wherein:
  • the first light-emitting diode 20, which is connected in series with each other, is a light-emitting diode having a multiple quantum well diode structure, and further has an electro blackening layer structure.
  • the q first impedance elements 34, each of the first impedance elements 34 are connected in parallel to the first light emitting diode 20, wherein the first impedance element 34 is a diode element, a resistive element or a capacitive element, and the diode PN diodes, Schockley diodes, semiconductor heterojunes, organic electro-luminescent ma ter ials, or polymers can be used for component practice.
  • a light-emitting diode (polymer e lectro- luminescent mater ia ls), and the resistive element can be practically used with Ohmic contact res is tance or thin film wound resistor.
  • the m second light emitting diodes 40 connected in series are connected in parallel to the p first light emitting diodes 20 connected in series, and the polarity of the second light emitting diode 40 is opposite to that of the first light emitting diode 20.
  • the structure, characteristics and efficacy of the second LED 40 are the same as those of the first LED 20 , and therefore will not be described again.
  • the second impedance elements 36 are each connected in parallel to the second light emitting diodes 40, wherein the second impedance elements 36 are diode elements, resistive elements or capacitive reactance elements.
  • the diode element can be practically used as a semiconductor (semi-conductor pn junc ion), a Schickle diode (Schockl ey diode), and a heterojunction diode. (semiconductor hetero junct ion), organic electro-luminescent materials or polymer electro-luminescent materials, and the resistance element can be ohmic contact resistance or film winding. Resistance.
  • FIG. 11 and FIG. 12 it is a schematic diagram of an embodiment of a light-emitting diode circuit having a plurality of threshold voltages according to the present invention.
  • the p value and the m value are integers greater than or equal to two
  • the q value is an integer less than p (as shown in FIG. 11), or an integer equal to p (as shown in FIG. 10)
  • the value of n is less than (as shown in Figure 11) or an integer equal to m (as shown in Figure 12).
  • the high voltage light emitting diode circuit having a plurality of threshold voltages of the embodiment is a light emitting diode integrated circuit having a plurality of critical voltages.
  • FIG. 13 there is shown a voltage-current characteristic diagram of a light-emitting diode having a plurality of threshold voltages according to a ninth embodiment of the present invention.
  • the voltage-current characteristic diagram of the light-emitting diode with multi-segment threshold voltage of this embodiment, and in FIG. 13 is an example of a positive half-cycle AC power supply, wherein the first threshold voltage (Vfti) is smaller than the second threshold voltage (V 2 ) And the second threshold voltage (V 2 ) is smaller than the third threshold voltage (V 3 ), which respectively correspond to three time points (first time t1, second time t2, ⁇ . time t3).
  • the LED circuit with multi-segment threshold voltage in the embodiment of the invention can also be fabricated into an integrated circuit.
  • the high-voltage LED circuit with multi-segment threshold voltage and its diode illuminating device enable the LED circuit to have multi-stage threshold voltage starting characteristics, so that step-by-step LED illumination can be achieved without using an additional switching circuit for control.
  • the effect can further reduce the manufacturing cost, and the resistance matching and parallel design can not only apply the voltage specifications of the LED circuit, but also can continue in the case of partial LED failure. Maintaining normal lighting is also convenient in use. Industrial applicability
  • the resistance matching design of the impedance element of the present invention enables the power supply specification of the LED circuit to be no longer limited to a specific voltage (Vth) multiple (ie, 3V, 6V, 9V, 12, etc.), which can be large. It is ideal for practical use in order to increase the range of voltage specifications that can be applied.
  • Vth specific voltage
  • the invention adopts a parallel circuit design.
  • the remaining LEDs that have not failed can still maintain normal illumination, and the convenience of use can be greatly improved.
  • the invention adopts a multi-section threshold voltage design, so that the LED can start illumination according to the designed critical voltage value, and can replace the structural design of the segment control using the switch circuit in the past, which can reduce the manufacturing cost of the illumination product.

Abstract

A light emitting diode chip having an impedance element including a first substrate (10), at least a first light emitting diode (20) formed on the substrate (10), at least an impedance element (30) formed on the substrate (10) and electrically connected with the light emitting diode (20) in series.

Description

具多段临界电压的高压发光二极管电路及其二极管发光装置 技术领域  High-voltage light-emitting diode circuit with multi-section threshold voltage and diode illuminating device thereof
本发明涉及一种应用于高功率的发光二极管， 特别是涉及一种具阻抗 元件的高压发光二极管晶片、 次粘着基台（Submount)式的高压发光二极管 晶片、 二极管发光装置及具多段临界电压的高压发光二极管电路。 背景技术  The invention relates to a high-power light-emitting diode, in particular to a high-voltage light-emitting diode chip with a resistive component, a submount high-voltage light-emitting diode chip, a diode light-emitting device and a multi-section threshold voltage. High voltage LED circuit. Background technique
发光二极管（Light Emi t t ing Diode; LED)随着材料科技进步， 在发光 颜色及亮度的进展已不可同日而语， 各种发光二极管显示技术已趋近全彩 化与高亮度化， 发光二极管更有希望成为照亮人类生活的新世代的照明设 备。  Light-emitting diodes (LEDs) have become more and more different in terms of illuminating color and brightness with the advancement of materials technology. Various LED display technologies have approached full color and high brightness, and LEDs have become more There is hope for a new generation of lighting that illuminates human life.
近年来， 由于发光二极管发光效率等产品特性持续的改善， 使得发光 二极管的应用市场大幅度成长。 发光二极管之所以能有如此高的市场成长 率，主要的成长动力有二点， 首先是在发光二极管显示器背光源市场中发光 二极管与冷阴极射线管（Codex Commi t tee on Food Label l ing; CCFL)之间 的替代； 其次是在一般光源市场中发光二极管与白炽灯泡与荧光灯之间的 替代。 在上述两个成长动力市场中, 发光二极管均具有环保、 节能及色彩 表现性佳的产品优势， 其中如 "欧盟 2006年禁用汞" 的环保法规更是驱动 市场成长的主要原因。  In recent years, as the product characteristics such as the luminous efficiency of light-emitting diodes have continued to improve, the application market for light-emitting diodes has grown substantially. LEDs have such a high market growth rate, the main growth momentum is two points, the first is in the LED display backlight market LED and cold cathode ray tube (Codex Commi t tee on Food Label ling; CCFL The alternative between; the second is the replacement between LEDs and incandescent bulbs and fluorescent lamps in the general light source market. Among the above two growth power markets, LEDs have the advantages of environmental protection, energy saving and color performance. Among them, the environmental protection regulations of “European Union banned mercury in 2006” is the main reason driving market growth.
在目前的二极管照明产品中， 高压的发光二极管其采用串联电路设计 时，若其中一颗发光二极管发生故障， 将导致整个装置无法使用， 此时需要 将发生故障的发光二极管取下更换新或整组报廈更新， 在使用上及产品稳 定度上显然存在有不便与不足。 .  In the current diode lighting products, when a high-voltage LED is designed in a series circuit, if one of the LEDs fails, the entire device will be unusable. In this case, the failed LED should be removed and replaced. There is obviously inconvenience and deficiency in the use of the newspapers and the stability of the products. .
美国专利公告号第 US6830358 号， 其揭露的发光二极管电路虽然可使 用在直流或交流电源环境中， 但是其为分立元件（di screte component) ,尺 寸亦较處大，.不符合短小轻薄的设计趋势。  U.S. Patent No. 6,830,358, the disclosed LED circuit can be used in a DC or AC power environment, but it is a discrete component and is also relatively large in size. It does not conform to the short and light design trend. .
另外， 美国专利公开号第 20050254243号， 其揭露的发光二极管电路 虽然是以晶片制程制造， 可以缩小尺寸体积， 但是其仅可操作于交流电压 环境中， 且同极性的发光二极管均采用串联方式连接， 故在其中一颗发光 二极管发生故障时， 将会导致其余的发光二极管无法继续提供照明， 在使 用上亦不方便。  In addition, U.S. Patent Publication No. 20050254243, which discloses a light-emitting diode circuit which is manufactured by a wafer process and can be reduced in size, but which can only operate in an AC voltage environment, and the same-polarity light-emitting diodes are connected in series. Connection, so when one of the LEDs fails, it will cause the remaining LEDs to continue to provide illumination, which is also inconvenient to use.
由于现有习知技术是采用发光二极管串联的设计并无阻抗元件， 因此 其操作电压仅能操作于发光二极管其临界电压（Vth)的倍数， 不具有操作于 更细部电压的功能。 尤其是发光二极管串联的设计是为单一回路的设计，因 此仅能操作于单一高压（Vth*串联的发光二极管数量 N)的环境下，而不具有 多段临界电压操作的特性。 Since the prior art has a design in which the LEDs are connected in series without an impedance element, the operating voltage can only operate at a multiple of the threshold voltage (Vth) of the LED, and does not have the function of operating at a more detailed voltage. In particular, the design of the LEDs in series is a single loop design, because This can only operate in a single high voltage (Vth* series number of LEDs N) environment, without the characteristics of multi-segment threshold voltage operation.
由此可见， 上述现有的发光二极管电路及其二极管发光装置在结构与 使用上， 显然仍存在有不便与缺陷， 而亟待加以进一步改进。 为了解决上 述存在的问题， 相关厂商莫不费尽心思来谋求解决之道， 但长久以来一直 未见适用的设计被发展完成， 而一般产品又没有适切的结构能够解决上述 问题， 此显然是相关业者急欲解决的问题。 因此如何能创设一种新型结构 的具阻抗元件的高压发光二极管晶片、 二极管发光装置及具多段临界电压 的高压发光二极管电路， 实属当前重要研发课题之一， 亦成为当前业界极 需改进的目标。  It can be seen that the above-mentioned existing LED circuit and its diode illuminating device obviously have inconveniences and defects in structure and use, and further improvement is urgently needed. In order to solve the above problems, the relevant manufacturers do not bother to find a solution, but the design that has not been applied for a long time has been developed, and the general product has no suitable structure to solve the above problem, which is obviously related. The problem that the industry is anxious to solve. Therefore, how to create a new type of high-voltage light-emitting diode chip with impedance element, diode light-emitting device and high-voltage light-emitting diode circuit with multi-step threshold voltage is one of the current important research and development topics, and it has become an urgent target for the industry. .
有鉴于上述现有的发光二极管电路及其二极管发光装置所存在的缺 陷，本发明人基于从事此类产品设计制造多年丰富的实务经验及其专业知 识，并配合学理的运用， 积极加以研究创新， 以期创设一种新型结构的具阻 抗元件的高压发光二极管晶片、 次粘着基台（Submount)式的高压发光二极 管晶片、 二极管发光装置及具多段临界电压的高压发光二极管电路，能够改 进一般现有的发光二极管电路及其二极管发光装置，使其更具有实用性。 经 过不断的研究、 设计，并经过反复试作样品及改进后， 终于创设出确具实用 价值的本发明。 发明内容  In view of the above-mentioned defects of the existing LED circuit and its diode illuminating device, the present inventors actively research and innovate based on the rich practical experience and professional knowledge of designing and manufacturing such products for many years, and with the application of academic principles. In order to improve the general existing one, a high-voltage LED chip with a resistive component, a submount high-voltage LED chip, a diode illuminating device and a high-voltage LED circuit with multiple threshold voltages can be created. The LED circuit and its diode illumination device make it more practical. After continuous research, design, and repeated trials of samples and improvements, the invention has finally been created with practical value. Summary of the invention
本发明的目的在于， 克服现有的发光二极管电路及其二极管发光装置 存在的缺陷， 而提供一种具阻抗元件的高压发光二极管晶片、 次粘着基台 (Submount)式的高压发光二极管晶片、 二极管发光装置及具多段临界电压 的高压发光二极管电路， 又通过并联回路与阻抗元件的阻值设计， 使二极 管可以操作于任一特定的直流或交流电压环境中，并且具有多段临界电压 启动的特性， 藉此可以提升发光二体电路的使用便利性，从而更加适于实 用。  The object of the present invention is to overcome the defects of the existing light emitting diode circuit and the diode light emitting device thereof, and to provide a high voltage light emitting diode chip with a resistive element, a submount high voltage light emitting diode chip, and a diode. The illuminating device and the high-voltage LED circuit with multi-section threshold voltage, through the parallel circuit and the resistance design of the impedance component, enable the diode to operate in any specific DC or AC voltage environment, and have multi-segment threshold voltage starting characteristics. Thereby, the convenience of use of the light-emitting two-body circuit can be improved, and thus it is more suitable for practical use.
本发明的目的及解决其技术问题是采用以下技术方案来实现的。 依据 本发明提出的一种具阻抗元件的高压发光二极管晶片，其包含有： 一第一基 材；至少一第一发光二极管，形成于该第一 材上; 以及至少一阻抗元件，形 成于该第一基材上且电性串联于该第一发光二极管的一端。 ― 本发明的 ϋ的及解决其技术问题还可采用以下技术措施进一步实现。 前述的高压发光二极管晶片，其中所述的阻抗元件是为一二极管元件 或一电阻元件。  The object of the present invention and solving the technical problems thereof are achieved by the following technical solutions. A high voltage light emitting diode chip with an impedance element according to the present invention includes: a first substrate; at least one first light emitting diode formed on the first material; and at least one impedance element formed on the The first substrate is electrically connected in series to one end of the first light emitting diode. The technical problems of the present invention and solving the technical problems can be further achieved by the following technical measures. The aforementioned high voltage light emitting diode chip, wherein the impedance element is a diode element or a resistance element.
本发明的目的及解决其技术问题还采用以下技术方案来实现。 依据本 发明提出的一种具阻抗元件的高压发光二极管晶片， 其包含有： 一第一基 材； 至少一第一发光二极管， 形成于该第一基材上； 至少一第二发光二极 管，形成于该第一基材上， 该第二发光二极管的极性与该第一发光二极管相 反，且该第二发光二极管是与该第一发光二极管并联； 以及至少一阻抗元 件，形成于该第一基材上且电性串联于该第一发光二极管或该第二发光二 极管的一侧。 The object of the present invention and solving the technical problems thereof are also achieved by the following technical solutions. A high voltage light emitting diode chip with an impedance element according to the present invention, comprising: a first base At least one first light emitting diode is formed on the first substrate; at least one second light emitting diode is formed on the first substrate, and the polarity of the second light emitting diode is opposite to the first light emitting diode. And the second light emitting diode is connected in parallel with the first light emitting diode; and at least one impedance element is formed on the first substrate and electrically connected in series to one side of the first light emitting diode or the second light emitting diode.
本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。 前述的具阻抗元件的高压发光二极管晶片，其中所述的阻抗元件是为 一二极管元件、 一电阻元件或一容抗元件。  The object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures. The aforementioned high voltage light emitting diode chip with an impedance element, wherein the impedance element is a diode element, a resistance element or a capacitive element.
本发明的目的及解决其技术问题还采用以下的技术方案来实现。 依据 本发明提出的一种次粘着基台（Submount)式的高压发光二极管晶片，其包 含有： 一第二基材， 该第二基材上形成有复数条导线； 至少一发光二极管 晶片，是形成于第二基材上， 其具有： 一第一基材； 及至少一第一发光二极 管，形成于该第一基材上且电性连接于该些导线； 以及至少一阻抗元件，形 成于该第二基材上，该阻抗元件是电性连接于该些导线且电性串联于该第 一发光二极管的一侧。
Figure imgf000005_0001
The object of the present invention and solving the technical problems thereof are also achieved by the following technical solutions. A submount high voltage light emitting diode chip according to the present invention includes: a second substrate on which a plurality of wires are formed; at least one LED chip is Formed on the second substrate, having: a first substrate; and at least one first light emitting diode formed on the first substrate and electrically connected to the wires; and at least one impedance element formed on The impedance element is electrically connected to the wires and electrically connected in series to one side of the first light emitting diode.
Figure imgf000005_0001
选自印刷电路板 (PCB)、 硅基材及陶瓷所组成的群组之一。 One of a group consisting of a printed circuit board (PCB), a silicon substrate, and a ceramic.
前述的次粘着基台式的高压发光二极管晶片， 其中所述的陶瓷是选自 氧化铝（A1203)、氮化铝（A1N)、氧化铍（BeO)、低温共烧陶瓷（Low TemperatureThe above-mentioned sub-adhesive base high-voltage light-emitting diode chip, wherein the ceramic is selected from the group consisting of alumina (A1 2 0 3 ), aluminum nitride (A1N), beryllium oxide (BeO), low temperature co-fired ceramic (Low Temperature)
Co-f i red Ceramic ; LTCC)及高温共烧陶瓷（High temperature Co-f i reCo-f i red Ceramic ; LTCC) and high temperature co-fired ceramics (High temperature Co-f i re
Ceramic; HTCC)所组成的群组之一。 One of the groups consisting of Ceramic; HTCC).
前述的次粘着基台式的高压发光二极管晶片，'其中所述的阻抗元件是 为一二极管元件或一电阻元件。 发明提出的一种次粘 ^基^台 (Submount)式的高压发光二极管 ^曰曰片，其包含 有： 一第二基材， 该第二基材上形成有复数条导线； 至少一发光二极管晶 片，形成于笫二基材上，其具有： 一第一基材； 及至少一第一发光二极管，形 成于该第一基材上且电性连接于该些导线； 至少一第二发光二极管，形成于 该第一基材或该第二基材上 , 该第二发光二极警的极性与该第一发光二极 管相反且该第二发光二极管是与该第一发光二极管并联且电性连接； 以及 至少一阻抗元件， 形成于该第二基材上， 该阻抗元件是电性连接于该些导 线且电性串联于该第一发光二极管或该第二发光二极管的一侧。  The aforementioned sub-adhesive base high voltage light emitting diode chip, wherein the impedance element is a diode element or a resistance element. The invention discloses a sub-mounting high-voltage light-emitting diode, which comprises: a second substrate, wherein the second substrate is formed with a plurality of wires; at least one light-emitting diode The wafer is formed on the second substrate, and has: a first substrate; and at least one first light emitting diode formed on the first substrate and electrically connected to the wires; at least one second LED Formed on the first substrate or the second substrate, the polarity of the second LED is opposite to the first LED and the second LED is connected in parallel with the first LED and electrically And the at least one impedance component is formed on the second substrate, the impedance component is electrically connected to the wires and electrically connected in series to one side of the first LED or the second LED.
本发明的 .目的及解决其技术问题还可采用以下技术措施进一步实现。 前述的次粘着基台式的高压发光二极管晶片， 其中所述的第二基材是 选自印刷电路板 (PCB)、 硅基材及陶瓷所组成的群组之一。 前述的次粘着基台式的高压发光二极管晶片， 其中所述的陶瓷是选自 氧化铝（ A1203)、 氮化铝（A IN)、 氧化铍 (BeO)、 低温共烧陶瓷及高温共烧陶 瓷所组成的群组之一。 The object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures. The above-mentioned sub-adhesive substrate high-voltage light-emitting diode chip, wherein the second substrate is one selected from the group consisting of a printed circuit board (PCB), a silicon substrate, and a ceramic. The above-mentioned sub-adhesive substrate high-voltage light-emitting diode chip, wherein the ceramic is selected from the group consisting of alumina (A1 2 0 3 ), aluminum nitride (A IN), yttrium oxide (BeO), low-temperature co-fired ceramics, and high temperature. One of the groups consisting of ceramics.
前述的次粘着墓台式的高压发光二极管晶片，其中所述的阻抗元,是 为一二极管元件、 一电阻元件或一容抗元件。 ： 本发明的目的及解决其技术问题还采用以下技术方案来实现。 依据本 发明提出的一种二极管发光装置，其包括： 一座体结构，其具有： 一本体，在 该本体内形成有一晶片基座； 及至少二导线架， 每一该导线架是独立且互 不电性连结，又每一该导线架是固设于该本体上； 至少一具阻抗元件的高压 发光二极管晶片，其包含有： 一第一基材， 固设于该晶片基座内； 至少一第 一发光二极管，形成于该第一基材上，其一端藉由一第一导线电性连接于一 该导线架； 及至少一阻抗元件， 形成于该第一基材上， 其一端电性串联于 该第一发光二极管的另一端， 又该阻抗元件的另一端是藉由一第二导线电 性连接于另一该导线架； 一取光层， 覆盖于该晶片基座内的已完成该些导 线连结的该高压发光二极管晶片上； 以及一透镜， 结合于该本体且覆盖于 该晶片基座上。 前述的二极管发光装置， 其中所述的具阻抗元件的高压发光二极管晶 片更包含有至少一第二发光二极管， 形成于该第一基材上，该第二发光二极 管的极性与该第一发光二极管相反且相互并联。  The high-voltage LED chip of the above-mentioned sub-adhesive tomb, wherein the impedance element is a diode element, a resistance element or a capacitive element. The object of the present invention and solving the technical problems thereof are also achieved by the following technical solutions. A diode lighting device according to the present invention includes: a body structure having: a body in which a wafer base is formed; and at least two lead frames, each of which is independent and not mutually Electrically coupled, each of the lead frames is fixed on the body; at least one high-voltage LED chip having an impedance component, comprising: a first substrate fixed in the wafer base; at least one a first light emitting diode is formed on the first substrate, one end of which is electrically connected to a lead frame by a first wire; and at least one impedance element is formed on the first substrate, and one end of the first substrate is electrically Connected to the other end of the first LED, and the other end of the impedance element is electrically connected to the other lead frame by a second wire; a light-receiving layer is completed in the wafer base The wires are connected to the high voltage light emitting diode chip; and a lens is coupled to the body and covers the wafer base. In the above diode light emitting device, the high voltage light emitting diode chip with the impedance element further includes at least one second light emitting diode formed on the first substrate, the polarity of the second light emitting diode and the first light emitting The diodes are opposite and parallel to each other.
前述的二极管发光装置， 其中所述的具阻抗元件的高压发光二极管晶 片至少包含一红色、 一蓝色及一绿色的二极管晶片。  In the above diode light emitting device, the high voltage light emitting diode chip with the impedance element includes at least one red, one blue and one green diode chip.
前述的二极管发光装置， 其中所述的具阻抗元件的高压发光二极管晶 片是具有至少二种发光颜色， 且覆盖于该些具阻抗元件的高压发光二极管 晶片上的该取光层进一步掺入有一扩散粉。  In the above diode light-emitting device, the high-voltage light-emitting diode chip with the impedance element is at least two kinds of light-emitting colors, and the light-trapping layer covering the high-voltage light-emitting diode chip with the impedance element is further doped with a diffusion. powder.
前述的二极管发光装置， 其中所述的具阻抗元件的高压发光二极管晶 片是为一发蓝光的具阻抗元件的高压发光二极管晶片， 且覆盖于该具阻抗 元件的高压发光二极管晶片上的该取光层上进一步覆盖有一光波转换层。  In the above diode light-emitting device, the high-voltage light-emitting diode chip with the impedance element is a blue light-emitting high-voltage light-emitting diode chip with an impedance element, and the light-receiving light is covered on the high-voltage light-emitting diode chip with the impedance element. The layer is further covered with a lightwave conversion layer.
前述的二极管发光装置，其中所述的取光层是为一高透光的透明树脂 或一透明胶体。  In the above diode light-emitting device, the light-trapping layer is a transparent resin or a transparent colloid.
前述的二极管发光装置，其中所述的透镜是为一玻璃或一透明塑胶或 一硅胶的材质。  In the above diode light-emitting device, the lens is made of a glass or a transparent plastic or a silica gel.
.本发明的目的及解决其技术问题还采用以下技术方案来实现。 依据本 发明提出的一种二极管发光装置，其包括： 一座体结构，其具有： .一本体,在 该本体内形成有一晶片基座； 及至少二导线架， 每一该导线架是独立且互 不电性连结，又每一该导线架是固设于该本体上； 至少一次粘着基台式的高 压发光二极管晶片， 其包含有： 一第一基材， 固设于该晶片基座内； 至少 一第一发光二极管， 形成于该第一基材上， 其一端藉由一第一导线电性连 接于一该导线架; 及至少一阻抗元件， 形成于该第二基材上， 其一端电性 串联于该第一发光二极管 ^另一端， 又该阻抗元件的另一端是藉由一第二 导线电性连接于另一该导线架； 一取光层， 覆盖于该晶片基座内的已完成 该些导线连结的该次粘着基台式的高压发光二极管晶片上； 以及一透镜，结 合于该本体且覆盖于该晶片基座上。 The object of the present invention and solving the technical problems thereof are also achieved by the following technical solutions. A diode lighting device according to the present invention includes: a body structure having: a body having a wafer base formed therein; and at least two lead frames, each of the lead frames being independent and mutually Non-electrical connection, and each of the lead frames is fixed on the body; at least once adhered to the base The light-emitting diode chip comprises: a first substrate fixed in the wafer base; at least one first light-emitting diode formed on the first substrate, one end of which is electrically connected by a first wire Connected to a lead frame; and at least one impedance element formed on the second substrate, one end of which is electrically connected in series to the other end of the first LED, and the other end of the impedance element is by a second The wire is electrically connected to the other lead frame; a light-receiving layer is disposed on the high-voltage light-emitting diode chip of the adhesive substrate on the wafer base that has completed the wire bonding; and a lens is coupled to the wire The body is covered on the wafer base.
本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。 前述的二极管发光装置， 其中所述的次粘着基台式的高压发光二极管 晶片更包含有至少一第二发光二极管，形成于该第一基材上，该第二发光二 极管的极性与该笫一发光二极管相反且相互并联。  The object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures. In the above diode light-emitting device, the sub-adhesive substrate high-voltage light-emitting diode chip further includes at least one second light-emitting diode formed on the first substrate, and the polarity of the second light-emitting diode is different from the first one. The light emitting diodes are opposite and parallel to each other.
前述的二极管发光装置， 其中所述的次粘着基台式的高压发光二极管 晶片至少包含一红色、 一蓝色及一绿色的二极管晶片。  In the above diode lighting device, the sub-adhesive base high voltage light emitting diode chip comprises at least one red, one blue and one green diode chip.
前述的二极管发光装置， 其中所述的次粘着基台式的高压发光二极管 晶片是具有至少二种发光颜色 , 且覆盖于该次粘着基台式的高压发光二极 管晶片上的该取光层进一步掺入有一扩散粉。  In the above diode light-emitting device, wherein the sub-adhesive base high-voltage light-emitting diode chip is a light-receiving layer having at least two kinds of light-emitting colors and covering the high-voltage light-emitting diode chip of the adhesive substrate, further incorporating Diffusion powder.
前述的二极管发光装置， 其中所述的次粘着基台式的高压发光二极管 晶片'是为一发蓝光的次粘着基台式的高压发光二极管晶片， 且覆盖于该次 粘着基台式的高压发光二极管晶片上的该取光层上进一步覆盖有一光波转 换层。  The aforementioned diode light-emitting device, wherein the sub-adhesive base high-voltage light-emitting diode chip 'is a blue-emitting sub-adhesive base high-voltage light-emitting diode chip, and covers the sub-adhesive base high-voltage light-emitting diode chip. The light taking layer is further covered with a light wave conversion layer.
前述的二极管发光装置，其中所述的取光层是为一高透光的透明树脂 或一透明胶体。  In the above diode light-emitting device, the light-trapping layer is a transparent resin or a transparent colloid.
前述的二极管发光装置，其中所述的透镜是为一玻璃或一透明塑胶或 一硅胶的材质。  In the above diode light-emitting device, the lens is made of a glass or a transparent plastic or a silica gel.
本发明的目的及解决其技术问题还采用以下技术方案来实现。 依据本 发明提出的一种二极管发光装置，其包括： 一座体结构，其具有： 一本体，在 该本体内形成有一晶片基座； 及至少二导线架,每一该导线架是独立且互不 电性连结，又每一该导线架是固设于该本体上；至少一发光二极管晶片，其 包含有： 一第一基材， 固设于该晶片基座内； 及至少一第一 光二极管，形 成于该第一基材上,其一端藉由一第一导线电性连接于一该專线架； 至少一 阻抗元件， 固设于该晶片基座内， 其一端电性串联于该第一发光二极管的 另一端，又该阻抗元件的另一端是藉由一第二导线电性连接于另一该导线 架；一取光层， 覆盖于该晶片基座内的已完成该些导线连结的该发光二极管 晶片及该阻抗元件上； 以.及一透镜，结合于该本体且覆盖于该晶片基座上。  The object of the present invention and solving the technical problems thereof are also achieved by the following technical solutions. A diode lighting device according to the present invention includes: a body structure having: a body in which a wafer base is formed; and at least two lead frames, each of which is independent and not mutually Electrically connected, each of the lead frames is fixed on the body; at least one LED chip comprises: a first substrate fixed in the wafer base; and at least one first photodiode Formed on the first substrate, one end of which is electrically connected to a dedicated wire frame by a first wire; at least one impedance component is fixed in the wafer base, and one end thereof is electrically connected in series The other end of the light-emitting diode, the other end of the impedance element is electrically connected to the other lead frame by a second wire; a light-receiving layer, the wire bonding is completed in the wafer base The LED chip and the impedance element; and a lens are coupled to the body and overlying the wafer base.
本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。 前述的二极管发光装置，其中所述的阻抗元件是为一二极管元件或一 电阻元件。 ， 前述的二极管发光装置，其中所述的发光二极管晶片更包含有至少一 第二发光二极管， 形成于该第一基材上，该第二发光二极管的极性与该第一 发光二极管相反且相互并联。 The object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures. The diode light emitting device described above, wherein the impedance element is a diode element or a Resistance element. The diode light emitting device, wherein the LED chip further comprises at least one second light emitting diode formed on the first substrate, the second light emitting diode having a polarity opposite to the first light emitting diode and mutual in parallel.
前述的二极管发光装置，其中所述发光二极管晶片至少包含一红色、 一 蓝色及一绿色的二极管晶片。  In the above diode lighting device, the LED chip comprises at least one red, one blue and one green diode chip.
前述的二极管发光装置，其中所述的发光二极管晶片是具有至少二种 发光颜色， 且覆盖于该发光二极管晶片上的该取光层进一步掺入有一扩散 粉。  In the above diode light emitting device, the light emitting diode chip has at least two kinds of light emitting colors, and the light extracting layer covering the light emitting diode chip is further doped with a diffusion powder.
前述的二极管发光装置，其中所述的发光二极管晶片是为一发蓝光的 发光二极管晶片，且覆盖于该发光二极管晶片上的该取光层上进一步覆盖 有一光波转换层。  In the above diode light-emitting device, the light-emitting diode chip is a blue light-emitting diode chip, and the light-trapping layer covering the light-emitting diode chip is further covered with a light wave conversion layer.
前述的二极管发光装置，其中所述的取光层是为一高透光的透明树脂 或一透明胶体。  In the above diode light-emitting device, the light-trapping layer is a transparent resin or a transparent colloid.
前述的二极管发光装置，其中所述的透镜是为一玻璃或一透明塑胶或 一硅胶的材质。  In the above diode light-emitting device, the lens is made of a glass or a transparent plastic or a silica gel.
本发明的目的及解决其技术问题另外还采用以下技术方案来实现。 依 据本发明提出的一种具多段临界电压的高压发光二极管电路， 其是操作于 一直流电压源的环境中， 其包括： ρ颗相互串联的发光二极管； 以及 q颗阻 抗元件， 每一该阻抗元件是以一对一方式并联于该些发光二极管； 其中，该 的值是为大于或等于二的整数,该 q的值是小于或等于该 P的值。  The object of the present invention and solving the technical problems thereof are additionally achieved by the following technical solutions. A high voltage light emitting diode circuit having a multi-segment threshold voltage according to the present invention is an environment operating in a DC voltage source, comprising: ρ LEDs connected in series with each other; and q impedance elements, each of the impedances The components are connected in parallel to the light emitting diodes in a one-to-one manner; wherein the value is an integer greater than or equal to two, and the value of the q is less than or equal to the value of the P.
本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。 前述的具多段临界电压的高压发光二极管电路，其中所述的阻抗元件 是为一二极管元件或一电阻元件。  The object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures. The aforementioned high voltage light emitting diode circuit having a plurality of threshold voltages, wherein the impedance element is a diode element or a resistance element.
前述的具多段临界电压的高压发光二极管电路，其是为一种具多段临 界电压的发光二极管集成电路。  The aforementioned high voltage light emitting diode circuit having a plurality of threshold voltages is a light emitting diode integrated circuit having a plurality of critical voltages.
本发明的目的及解决其技术问题另外再采用以下技术方案来实现。 依 据本发明提出的一种具多段临界电压的高压发光二极管电路， 其是操作于 一交流电压源的环境中， 其包括： p颗相互串联的第一发光二极管； q颗第 一阻抗元件， 每一该第一阻抗元件是以一对一方式并联于一该第一发光二 极管； m颗相互串联的第二发光二极管是并联于 p颗相互串联的该些第一发 光二极管，且该些第二发光二极管的极性是与该些第一发光二极管相反；以 及 n颗第二阻抗元件， 每一该第二阻抗元件是以一对一方式并联于一该第 二发光二极管； 其中， 该 p及该 m是为大于或等于二的整数， 该 q是小于. 或等于该 p整数,该 n是小于或等于该 m的整数。  The object of the present invention and solving the technical problems thereof are additionally achieved by the following technical solutions. According to the present invention, a high voltage light emitting diode circuit having a plurality of threshold voltages is operated in an environment of an alternating voltage source, comprising: p first light emitting diodes connected in series with each other; q first impedance elements, each a first impedance element is connected in parallel to a first light emitting diode in a one-to-one manner; m second light emitting diodes connected in series are connected in parallel to the first light emitting diodes connected in series with each other, and the second The polarity of the light emitting diode is opposite to the first light emitting diodes; and n second impedance elements, each of the second impedance elements being connected in parallel to a second light emitting diode in a one-to-one manner; wherein The m is an integer greater than or equal to two, the q is less than or equal to the p integer, and the n is an integer less than or equal to the m.
本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。 前述的具多段临界电压的高压发光二极管电路，其中所述的第一阻抗 元件是为一二极管元件或一电阻元件或一容抗元件。 The object of the present invention and solving the technical problems thereof can be further achieved by the following technical measures. The high voltage light emitting diode circuit having a plurality of threshold voltages, wherein the first impedance element is a diode element or a resistance element or a capacitive element.
前述的具多段临界电压的高压发光二极管电路，其中所述的第二阻抗 元件是为一二极管元件或一电阻元件或一容抗元件。  The foregoing high voltage LED circuit having a plurality of threshold voltages, wherein the second impedance component is a diode component or a resistor component or a capacitive component.
前述的具多段临界电压的高压发光二极管电路，其是为一种具多段临 界电压的发光二极管集成电路。  The aforementioned high voltage light emitting diode circuit having a plurality of threshold voltages is a light emitting diode integrated circuit having a plurality of critical voltages.
本发明与现有技术相比具有明显的优点和有益效果。 由以上技术方案 可知， 本发明的主要技术内容如下：  The present invention has significant advantages and advantageous effects over the prior art. As can be seen from the above technical solutions, the main technical contents of the present invention are as follows:
为了达到上述目的， 本发明提供了一种具阻抗元件的高压发光二极管 晶片， 其包括有： 一第一基材； 至少一第一发光二极管， 形成于第一基材 上； 及至少一阻抗元件， 形成于第一基材上且电性串联于第一发光二极管 的一端。  In order to achieve the above object, the present invention provides a high voltage light emitting diode chip having an impedance element, comprising: a first substrate; at least one first light emitting diode formed on the first substrate; and at least one impedance element Formed on the first substrate and electrically connected in series to one end of the first light emitting diode.
另外，为了达到上述目的， 本发明又提供一种具阻抗元件的高压发光二 极管晶片，其包括有： 一第一基材； 至少一第一发光二极管，形成于第一基 材上； 至少一第二发光二极管，亦形成于第一基材上， 第二发光二极管的极 性与第一发光二极管相反且第二发光二极管是与第一发光二极管并联； 至 少一阻抗元件， 形成于第一基材上且电性串联于第一发光二极管或第二发 光二极管的一侧。  In addition, in order to achieve the above object, the present invention further provides a high voltage light emitting diode chip having an impedance element, comprising: a first substrate; at least one first light emitting diode formed on the first substrate; at least one a second light emitting diode is also formed on the first substrate, the second light emitting diode has a polarity opposite to the first light emitting diode and the second light emitting diode is connected in parallel with the first light emitting diode; at least one impedance element is formed on the first substrate And electrically connected in series to one side of the first light emitting diode or the second light emitting diode.
另外， 为了达到上述目的，本发明再提供一种次粘着基台（Submount)式 的高压发光二极管晶片，其包括有： 一第二基材， 第二基材上形成有复数条 导线； 至少一发光二极管晶片，形成于第二基材上,其具有： 一第一基材;及 至少一第一发光二极管， 形成于第一基材上且电性连接于该些导线； 及至 少一阻抗元件， 形成于第二基材上， 阻抗元件是电性连接于上述的导线且 电性串联于第一发光二极管的一侧。  In addition, in order to achieve the above object, the present invention further provides a submount type high voltage light emitting diode chip, comprising: a second substrate; the second substrate is formed with a plurality of wires; at least one The light emitting diode chip is formed on the second substrate and has: a first substrate; and at least one first light emitting diode formed on the first substrate and electrically connected to the wires; and at least one impedance component The impedance element is electrically connected to the wire and electrically connected in series to one side of the first light emitting diode.
另夕卜，为了达到上述目的 , 本发明又再提供一种次粘着基台式的高压发 光二极管晶片， 其包括有： 一第二基材，第二基材上形成有复数条导线；至 少一发光二极管晶片， 是形成于第二基材上， 其具有： 一第一基材;及至少 一第一发光二极管， 形成于第一基材上且电性连接于该些导线； 至少一第 二发光二极管， 形成于第一基材或第二基材上， 第二发光二极管的极性与 第一发光二极管相反且第二发光二极管是与第一发光二极管并联且电性连 接;及至少一阻抗元件， 形成于第二基材上， 阻抗元件是电性连接于该些导 线且电性串联于第一发光二极管或第二发光二极管的一侧。  In addition, in order to achieve the above object, the present invention further provides a sub-adhesive substrate high-voltage light-emitting diode chip, comprising: a second substrate; the second substrate is formed with a plurality of wires; at least one light is emitted The diode chip is formed on the second substrate and has: a first substrate; and at least one first light emitting diode formed on the first substrate and electrically connected to the wires; at least one second light emitting a diode formed on the first substrate or the second substrate, the second LED having a polarity opposite to the first LED and the second LED being electrically connected in parallel with the first LED; and at least one impedance component The impedance element is electrically connected to the wires and electrically connected in series to one side of the first light emitting diode or the second light emitting diode.
另夕卜，为了达到上述目的， 本发明又再提供一种二极管发光装置， 其包 括有： 一座体结构、 至少一具阻抗元件的高压发光二极管晶片、 一取光层 以及一透镜； 其中： 该座体结构， 其具有: 一本体， 在本体内形成有一晶 片基座； 至少二导线架， 每一导线架是独立且互不电性连结， 又每一导线 架是固设于本体上。 该具阻抗元件的高压发光二极管晶片，其包含有： 一第 一基材， 是固设于晶片基座内； 至少一第一发光二极管， 是形成于第一基 材上， 其一端藉由第一导线电性连接于第一导线架； 及至少一具阻抗元件 是形成于第一基材上， 其一端电性串联于第一发光二极管的另一端，而阻抗 元件的另一端是藉由第二导线电性连接于另一导线架。 该取光层， 其是用 以覆盖于晶片基座内的已完成导线连结的具阻抗元件的高压发光二极管晶 ' 片上。 透镜， 其是用以结合于本体且覆盖于晶片基座上。 ' In addition, in order to achieve the above object, the present invention further provides a diode light emitting device, comprising: a body structure, at least one high voltage light emitting diode chip having an impedance element, a light taking layer, and a lens; wherein: The body structure has: a body, a wafer base is formed in the body; at least two lead frames, each lead frame is independent and non-electrically connected, and each wire The frame is fixed to the body. The high-voltage light-emitting diode chip with a resistive element comprises: a first substrate fixed in the wafer base; at least one first light-emitting diode formed on the first substrate, one end of which is a wire is electrically connected to the first lead frame; and at least one impedance element is formed on the first substrate, one end of which is electrically connected in series to the other end of the first light emitting diode, and the other end of the impedance element is The two wires are electrically connected to the other lead frame. The light-receiving layer is used to cover the high-voltage light-emitting diode crystal piece with the impedance element connected to the completed wire in the wafer base. a lens for bonding to the body and covering the wafer base. '
此外，为了达到上述目的， 本发明又再提供一种二极管发光装置，其包 括：一座体结构、 至少一次粘着基台式的高压发光二极管晶片、 一取光层以 及一透镜。 该座体结构，其具有： 一本体，在本体内形成有一晶片基座；及至 少二导线架， 每一导线架是独立且互不电性连结， 又每一导线架是固设于 该本体上。 该次粘着基台式的高压发光二极管晶片， 其包含有： 一第一基 材，固设于晶片基座内； 至少一第一发光二极管，形成于第一基材上，其一端 藉由一第一导线电性连接于一导线架； 及至少一阻抗元件， 形成于第二基 材上， 其一端电性串联于第一发光二极管的另一端， 又阻抗元件的另一端 是藉由一第二导线电性连接于另一导线架。 该取光层，覆盖于晶片基座内的 已完成该些导线连结的次粘着基台式的高压发光二极管晶片上。 透镜，结合 于本体且覆盖于晶片基座上。  Further, in order to achieve the above object, the present invention further provides a diode light-emitting device comprising: a bulk structure, a high-voltage light-emitting diode chip bonded to the substrate at least once, a light-receiving layer, and a lens. The base structure has: a body, a wafer base is formed in the body; and at least two lead frames, each lead frame is independent and non-electrically connected, and each lead frame is fixed on the body on. The adhesive high-voltage light-emitting diode chip of the substrate comprises: a first substrate fixed in the wafer base; at least one first light-emitting diode formed on the first substrate, one end of which is a wire is electrically connected to a lead frame; and at least one impedance element is formed on the second substrate, one end of which is electrically connected in series to the other end of the first light emitting diode, and the other end of the impedance element is by a second The wire is electrically connected to another lead frame. The light-receiving layer covers the sub-adhesive substrate high-voltage light-emitting diode chip in the wafer base on which the wire bonds are completed. A lens is coupled to the body and overlies the wafer base.
为了达上述目的， 本发明再次提供一种二极管发光装置， 其包括： 一 座^^结构、 至少一发光二极管晶片、 至少一阻抗元件、 一取光层以及一透 镜。 该座体结构， 其具有： 一本体， 在本体内形成有一晶片基座； 及至少 二导线架，每一导线架是独立且互不电性连结， 又每一导线架是固设于该本 体上。 该发光二极管晶片， 其包含有： 一第一基材，固设于晶片基座内；及 至少一第一发光二极管， 形成于该第一基材上， 其一端藉由一笫一导线电 性连接于一导线架。 该阻抗元件， 固设于晶片基座内， 其一端电性串联于 第一发光二极管的另一端， 又阻抗元件的另一端是藉由一第二导线电性连 接于另一导线架。 该取光层，覆盖于晶片基座内的已完成该些导线连结的发 光二极管晶片及阻抗元件上； 及透镜， 结合于本体且覆盖于晶片基座上。  In order to achieve the above object, the present invention again provides a diode lighting device comprising: a structure, at least one LED chip, at least one impedance element, a light extraction layer, and a lens. The base structure has: a body, a wafer base is formed in the body; and at least two lead frames, each lead frame is independent and non-electrically connected, and each lead frame is fixed on the body on. The LED chip comprises: a first substrate fixed in the wafer base; and at least one first light emitting diode formed on the first substrate, one end of which is electrically connected by a wire Connected to a lead frame. The impedance element is fixed in the base of the wafer, one end of the impedance element is electrically connected to the other end of the first light emitting diode, and the other end of the impedance element is electrically connected to the other lead frame by a second wire. The light-trapping layer covers the light-emitting diode chip and the impedance element in the wafer base on which the wire connections are completed; and the lens is coupled to the body and covers the wafer base.
另夕卜，为了达到上述目的， 本发明又提供一种具多段临界电压的发光二 极管电路， 是操作于一直流电压源的环境中， 其包括有： p颗相互串联的发 光二极管； 以及 q颗阻抗元件， 每一阻抗元件是以一对一方式并联于该些 发光二极管， 其中 P的值是为大于或等于二的整数， 而 q的值是小于或等 于 p的值。  In addition, in order to achieve the above object, the present invention further provides an LED circuit having a plurality of threshold voltages, which is operated in an environment of a DC voltage source, comprising: p LEDs connected in series with each other; and q The impedance element, each impedance element is connected in parallel to the light emitting diodes in a one-to-one manner, wherein the value of P is an integer greater than or equal to two, and the value of q is a value less than or equal to p.
另夕卜，为了达到上述目的， 本发明又提供一种具多段临界电压的发光二 极管电路， 是操作于一交流电压源的环境中， 其包括有： p颗相互串联的第 一发光二极管； q颗第一阻抗元件， 每一第一阻抗元件是以一对一方式并联 于一该第一发光二极管； m颗相互串联的第二发光二极管是并联于 p颗相互 串联的该些第一发光二极管， 并且该些第二发光二极管的极性是与该些第 一发光二极管相反； 以及 n颗笫二阻抗元件， 该每一第二阻抗元件是以一 对一方式并联于一该第二发光二极管， 其中 p及' m是为大于或等于二的整 数，而 q是小于或等于 p整数， 而 n是小于或等于 m的整数。 In addition, in order to achieve the above object, the present invention further provides an LED circuit having a plurality of threshold voltages, which is operated in an environment of an AC voltage source, and includes: a first LED that is connected in series with each other; q a first impedance element, each of the first impedance elements being connected in parallel in a one-to-one manner a first light emitting diode; m second light emitting diodes connected in series are connected in parallel to the first light emitting diodes connected in series with each other, and the polarities of the second light emitting diodes are opposite to the first light emitting diodes And n 笫 second impedance elements, each of the second impedance elements being connected in parallel to a second one of the second light emitting diodes, wherein p and 'm are integers greater than or equal to two, and q is less than Or equal to p integer, and n is an integer less than or equal to m.
借由上述技术方案， 本发明具阻抗元件的高压发光二极管晶片、 次粘 着基台（Submount)式的高压发光二极管晶片、 二极管发光装置及具多段临 界电压的高压发光二极管电路至少具有下列优点及进步功效：  According to the above technical solution, the high-voltage light-emitting diode chip with the impedance element, the submount high-voltage light-emitting diode chip, the diode light-emitting device and the high-voltage light-emitting diode circuit with multi-section threshold voltage have at least the following advantages and advantages. Efficacy:
1、 本发明采用阻抗元件的阻值匹配设计， 使发光二极管电路可使用的 电源规格不再局限于特定电压（Vth)倍数（即 3V、 6V、 9V、 12……等等），可 以大为提升可应用的电压规格范围， 非常适于实用。  1. The present invention adopts the resistance matching design of the impedance component, so that the power supply specification that can be used in the LED circuit is no longer limited to a specific voltage (Vth) multiple (ie, 3V, 6V, 9V, 12, etc.), which can be greatly Improve the range of applicable voltage specifications and is ideal for practical use.
3、 本发明采用并联回路设计， 当发光二极管电路中的发光二极管发生 故障时， 其余未发生故障的发光二极管仍然可以维持正常的照明， 而可以 大幅提升使用的便利性。  3. The invention adopts a parallel circuit design. When the LED in the LED circuit fails, the remaining LEDs that have not failed can still maintain normal illumination, and the convenience of use can be greatly improved.
3、 本发明采用多段临界电压的设计， 使发光二极管可依照设计的临界 够降低 明产品的制 成本 ·、 、 A 3, the present invention employs multi-stage design threshold voltage, the light emitting diode may be made to reduce the cost of the product in accordance with the critical-out design,, A
综上所述， 本发明是有关于一种具多段临界电压的高压发光二极管电 路及其二极管发光装置， 尤其是提供了一种具阻抗元件的高压发光二极管 晶片、 次粘着基台（Submount)式的高压发光二极管晶片、 二极管发光装置 及具多段临界电压的高压发光二极管电路。 其中， 高压发光二极管晶片包 含有： 第一基材； 至少一第一发光二极管，形成于第一基材上；及至少一阻 抗元件， 形成于笫一基材上且电性串联于第一发光二极管的一端。 高压发 光二极管晶片可进一步结合于二极管发光装置中。 又高压发光二极管晶片 可转换形成具多段临界电压的高压发光二极管电路。 本发明具阻抗元件的 高压发光二极管晶片、 二极管发光装置及具多段临界电压的高压发光二极 管电路， 又通过并联回路与阻抗元件的阻值设计， 使二极管可以操作于任 一特定的直流或交流电压环境中， 并且具有多段临界电压启动的特性，藉此 可以提升发光二体电路的使用便利性。 本发明具有上述诸多优点及实用价 值，其不论在产品结构或功能上皆有较大改进， 在技术上有显著的进步，并 产生了好用及实用的效果，且较现有的发光二极管电路及其二极管发光装 置具有增进的突出功效，从而更加适于实用，并具有产业广泛利用价值，诚 为一新颖、 进步、 实用的新设计。  In summary, the present invention relates to a high voltage light emitting diode circuit having a plurality of threshold voltages and a diode light emitting device thereof, and more particularly to a high voltage light emitting diode chip with a resistive element and a submount type submount. High-voltage LED chip, diode illuminator and high-voltage LED circuit with multi-step threshold voltage. The high-voltage light-emitting diode chip includes: a first substrate; at least one first light-emitting diode formed on the first substrate; and at least one impedance element formed on the first substrate and electrically connected in series to the first light-emitting device One end of the diode. The high voltage light emitting diode chip can be further incorporated into a diode light emitting device. The high voltage LED chip can be converted to form a high voltage LED circuit with multiple threshold voltages. The high-voltage light-emitting diode chip with the impedance component, the diode light-emitting device and the high-voltage light-emitting diode circuit with multi-section threshold voltage, and the resistance design of the parallel circuit and the impedance component enable the diode to operate on any specific DC or AC voltage In the environment, and having a multi-stage threshold voltage start-up characteristic, the use convenience of the light-emitting two-body circuit can be improved. The invention has the above-mentioned many advantages and practical values, and has great improvements in product structure and function, has significant advances in technology, and has produced useful and practical effects, and is more existing than the existing LED circuit. And its diode illuminating device has enhanced outstanding effect, which is more suitable for practical use, and has extensive industrial use value, and is a novel, progressive and practical new design.
-上述说明仅是本发明技术方案的概述， 为了能够更清楚了解本发明的 技术手段， 而可依照说明书的内容予以实施， 并且为了让本发明的上述和 其他目的、 特征和优点能够更明显易懂， 以下特举较佳实施例， 并配合附 图，详细说明 ^下。 附图的简要说明 The above description is merely an overview of the technical solutions of the present invention, and the technical means of the present invention can be more clearly understood, and can be implemented in accordance with the contents of the specification, and the above and other objects, features and advantages of the present invention can be made more obvious. Understand, the following is a preferred embodiment, and with Figure, detailed description ^. BRIEF DESCRIPTION OF THE DRAWINGS
图 1 是本发明的一种具阻抗元件的高压发光二极管晶片的实施例的结 构剖面示意图。  BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing the structure of an embodiment of a high voltage light emitting diode chip having an impedance element of the present invention.
图 2是本发明的第一实施例及第二实施例的具阻抗元件的高压发光二 极管晶片， 其中第一发光二极管进一步串连不同阻抗元件的实施例的结构 剖面示意图。 .  Fig. 2 is a cross-sectional view showing the structure of an embodiment in which a first light emitting diode is further connected in series with different impedance elements, in a high voltage light emitting diode chip with an impedance element according to a first embodiment and a second embodiment of the present invention. .
图 3是本发明的一种次粘着基台式的高压发光二极管晶片的实施例的 结构剖面示意图。  Figure 3 is a cross-sectional view showing the structure of an embodiment of a sub-adhesive substrate high voltage light emitting diode chip of the present invention.
图 4是本发明的一种二极管发光装置的实施例的结构剖面示意图。 图 5是本发明的一种二极管发光装置的实施例的结构剖面示意图。 图 6是本发明的一种二极管发光装置的实施例的结构剖面示意图。 图 7是本发明的一种具多段临界电压的发光二极管电路的实施例的示 意图。  4 is a cross-sectional view showing the structure of an embodiment of a diode light-emitting device of the present invention. Figure 5 is a cross-sectional view showing the structure of an embodiment of a diode lighting device of the present invention. Figure 6 is a cross-sectional view showing the structure of an embodiment of a diode light-emitting device of the present invention. Figure 7 is a schematic illustration of an embodiment of a light emitting diode circuit having a multi-segment threshold voltage in accordance with the present invention.
图 8是本发明的一种具多段临界电压的发光二极管电路的示意图。 图 9是本发明第八实施例的具多段临界电压的发光二极管的电压-电流 特性曲线图。  Figure 8 is a schematic illustration of a light emitting diode circuit having a multi-segment threshold voltage in accordance with the present invention. Fig. 9 is a graph showing voltage-current characteristics of a light-emitting diode having a plurality of threshold voltages according to an eighth embodiment of the present invention.
图 10是本发明的一种具多段临界电压的发光二极管电路的实施例的示 意图。  Figure 10 is a schematic illustration of an embodiment of a light emitting diode circuit having a multi-segment threshold voltage in accordance with the present invention.
图 11是本发明的一种具多段临界电压的发光二极管电路的实施例的示 意图。  Figure 11 is a schematic illustration of an embodiment of a light emitting diode circuit having a multi-segment threshold voltage in accordance with the present invention.
图 12是本发明的一种具多段临界电压的发光二极管电路的实施例的示 意图。  Figure 12 is a schematic illustration of an embodiment of a light emitting diode circuit having a multi-segment threshold voltage in accordance with the present invention.
图 13是本发明第九实施例的具多段临界电压的发光二极管的电压-电 流特性曲线图。  Figure 13 is a graph showing voltage-current characteristics of a light-emitting diode having a plurality of threshold voltages according to a ninth embodiment of the present invention.
10 第一基材 20 第一发光二极管  10 first substrate 20 first light emitting diode
21 N型半导体层 22 欧姆触点  21 N-type semiconductor layer 22 ohmic contact
23 光放射层 24 P型半导体层  23 Light radiation layer 24 P type semiconductor layer
25 透明电流扩散层 26 绝缘层  25 transparent current diffusion layer 26 insulation layer
27 互连金属导线 30 阻抗元件  27 Interconnect metal wires 30 Impedance components
31 萧克利二极管 32 介电层  31 Xiaokly diode 32 dielectric layer
34 第一阻抗元件 36 第二阻抗元件  34 first impedance element 36 second impedance element
40 第二发光二极管 50 第二基材 .  40 second light emitting diode 50 second substrate .
51 导线 52 焊锡凸块  51 wire 52 solder bump
100:具阻抗元件的高压发光二极管晶片 200:座体结构 210:本体 100: High-voltage LED chip with impedance element 200: seat structure 210: body
211:晶片基座 220:第一导线架  211: wafer base 220: first lead frame
221:第一导线 ' 230:第二导线架  221: First wire '230: second lead frame
231:第二导线 240:取光层  231: second wire 240: light taking layer
250:透镜  250: lens
300:次粘着基台式的高压发光-二极管晶片  300: Sub-adhesive substrate high-voltage light-emitting diode chip
400:发光二极管晶片 V thl；第一临界电压  400: LED chip V thl; first threshold voltage
Y th2：第二临界电压 V ：第三临界电压  Y th2: second threshold voltage V: third threshold voltage
tl : 第一时间 t2: 第二时间  Tl : first time t2: second time
t 3: 第三时间 I ： 电流  t 3: third time I : current
V ： 电压 实现发明的最佳方式  V : Voltage The best way to achieve the invention
为更进一步阐述本发明为达成预定发明目的所采取的技术手段及功 效，以下结合附图及较佳实施例， 对依据本发明提出的具多段临界电压的高 压发光二极管电路及其二极管发光装置其具体实施方式、 结构、 特征及其 功效， 伴细说明 口后。  In order to further illustrate the technical means and efficacy of the present invention for achieving the intended purpose of the present invention, a high-voltage light-emitting diode circuit having a plurality of threshold voltages and a diode light-emitting device thereof according to the present invention will be described below with reference to the accompanying drawings and preferred embodiments. The specific embodiment, structure, characteristics and efficacy, with a detailed description of the mouth.
〈第一实施例 --具阻抗元件的高压发光二极管晶片一〉  <First Embodiment - High Voltage Light Emitting Diode Chip with Impedance Element>
请参阅图 1 所示， 是本发明的一种具阻抗元件的高压发光二极管晶片 的实施例的结构剖面示意图。 本发明较佳实施例的一种具阻抗元件的高压 发光二极管晶片， 是操作于一直流电压源的环境中， 其包含有： 一第一基 材 10、 至少一第一发光二极管 20以及至少一阻抗元件 30; 其中：  Referring to Fig. 1, there is shown a cross-sectional view showing the structure of an embodiment of a high voltage light emitting diode chip having an impedance element of the present invention. A high-voltage light-emitting diode chip with an impedance element is in an environment of a DC voltage source, comprising: a first substrate 10, at least one first LED 20, and at least one Impedance element 30; wherein:
该第一基材 10, 其为绝缘与耐热材质所构成。  The first substrate 10 is made of an insulating and heat resistant material.
该第一发光二极管 20, 形成于第一基材 10上， 其具有： N型半导体层 21.、 欧姆触点 22、 光放射层 23、 P型半导体层 24、 透明电流扩散层 25、 绝 缘层 26及互连金属导线 27 , 其中第一发光二极管 20是为一具有多重量子 井二极管（Mul t i- Quantum Wel l ; MQW)结构的发光二极管， 且其进一步具有 一电子黑 层（Electron blacking layer)结构。  The first light emitting diode 20 is formed on the first substrate 10 and has: an N-type semiconductor layer 21. an ohmic contact 22, a light emitting layer 23, a P-type semiconductor layer 24, a transparent current diffusion layer 25, and an insulating layer. And an interconnecting metal wire 27, wherein the first light emitting diode 20 is a light emitting diode having a multi-quantum well diode (Mul t i- Quantum Wel; MQW) structure, and further having an electron black layer (Electron blacking layer) )structure.
该阻抗元件 30, 形成于第一基材 10 上且电性串联于第一发光二极管 20的一端， 其中阻抗元件 30为二极管元件， 其具肴： N型半导体层 21、 欧 姆触点 22、 箫克利二极管 31、 绝缘层 26及互连金属导线 27。 但阻抗元件 30 亦可以为电阻元件， 而二极管元件实务上可采用 PN 二'极管 (semiconductor n junct ion)、 萧克利二极管 (Schockley diode)、 异质 接面二极管 (semiconductor hetero junct ion) , 有机发光二极管 (organic electro-luminescent mater ial s) 或 高 分子.发光二极管 (polymer electro-luminescent ma ter ia l s) , 而电阻元件实务上可釆用欧^触点电 阻（Ohmic contact res i s tance)或薄膜绕线式电阻。 The impedance element 30 is formed on the first substrate 10 and electrically connected in series with one end of the first LED 20, wherein the impedance element 30 is a diode element, and the device is: N-type semiconductor layer 21, ohmic contact 22, 箫Klee diode 31, insulating layer 26 and interconnect metal wires 27. However, the impedance element 30 can also be a resistive element, and the diode element can be practically used as a PN diode (Schiffley diode), a heterojunction diode (semiconductor hetero junct ion), organic Light-emitting diode (organic electro-luminescent material s) or polymer electro-luminescent ma ter ia ls, and the resistance element can be used in Europe Ohmic contact res is tance or film wound resistance.
<第二实施例一具阻抗元件的高压发光二极管晶片二〉 <Second Embodiment A High Voltage Light Emitting Diode Chip II with Impedance Element>
将第一实施例具阻抗元件的高压发光二极管晶片，其中的第一发光二 极管 20进一步并联极性相反的第二发光二极管 40后，即可操作于一交流电 压源的环境中，其包含有： 一第一基材 10、 至少一第一发光二极管 20、 至 少一阻抗元件 30以及至少一第二发光二极管 40; 其中：  The high-voltage LED chip with the impedance element of the first embodiment, wherein the first LED 20 is further connected in parallel with the second LED 40 of opposite polarity, can operate in an environment of an AC voltage source, and includes: a first substrate 10, at least one first LED 20, at least one impedance element 30, and at least one second LED 40; wherein:
该第一基材 10, 其为绝缘与耐热材质所构成。  The first substrate 10 is made of an insulating and heat resistant material.
该第一发光二极管 20， 形成于第一基材 10上， 其具有： N型半导体层 21、 欧姆触点 22、 光放射层 23、 P型半导体层 24、 透明电流扩散层 25、 绝 缘层 26及互连金属导线 27 , 其中第一发光二极管 20是为一具有多重量子 井二极管结构的发光二极管， 且其进一步具有一电子黑化层（electron blacking layer)结构。  The first light emitting diode 20 is formed on the first substrate 10 and has: an N-type semiconductor layer 21, an ohmic contact 22, a light emitting layer 23, a P-type semiconductor layer 24, a transparent current diffusion layer 25, and an insulating layer 26. And an interconnecting metal wire 27, wherein the first light emitting diode 20 is a light emitting diode having a multiple quantum well diode structure, and further has an electron blacking layer structure.
该第二发光二极管 40, 形成于第一基材 10上， 第二发光二极管 40的 极性与第一发光二极管 20相反， 且第二发光二极管 40是与第一发光二极 管 20并联。  The second LED 40 is formed on the first substrate 10. The second LED 40 has a polarity opposite to that of the first LED 20, and the second LED 40 is connected in parallel with the first LED 20.
该阻抗元件 30, 形成于第一基材 10上且电性串联于第一发光二极管 20或第二发光二极管 40的一侧， 其中阻抗元件 30包含有： N型半导体层 21、 欧姆触点 22、 介电层 32、 绝缘层 26及互连金属导线 27。 又该阻抗元 件 30可以为二极管元件、 电阻元件或容抗元件， 而二极管元件实务上可采 用 PN 二极管 (semiconductor pn junct ion)、 箭克利二极管 (Schockley diode)、 异质接面二极管 (semiconductor heterojunct i on)、 有机发光二 极管 (organic electro-luminescent 'mater ia l s)或高分子发光二极管 (polymer electro-luminescent mater ia l s) , 而电阻元件实务上可釆用 '欧 姆触点电阻（ohmic contact res i s tance)或薄膜绕线式电阻。  The impedance element 30 is formed on the first substrate 10 and electrically connected in series with one side of the first LED 20 or the second LED 40. The impedance element 30 includes: an N-type semiconductor layer 21 and an ohmic contact 22 , dielectric layer 32, insulating layer 26 and interconnect metal wires 27. Moreover, the impedance element 30 can be a diode element, a resistance element or a capacitive element, and the diode element can be practically a PN diode, a Schockley diode, a heterojunction diode (semiconductor junction) On), organic electro-luminescent 'mater ia ls or polymer electro-luminescent mater ia ls, and ohmic contact res is tance ) or film wound resistors.
请参阅图 2 所示， 是本发明的第一实施例及第二实施例的具阻抗元件 的高压发光二极管晶片， 其中第一发光二极管进一步'串连不同阻抗元件的 实施例的结构剖面示意图。 本发明的第一实施例及第二实施例的具阻抗元 件的高压发光二极管晶片， 其藉由串连多数个阻抗元件 30可以达到多种不 同操作电压的特性。 且将阻抗元件 30与发光二极管制作成一单体， 将可使 得高压发光二极管在使用及更换上更为方便。  Referring to FIG. 2, a high voltage light emitting diode chip with an impedance element according to a first embodiment and a second embodiment of the present invention, wherein the first light emitting diode further has a structural cross-sectional view of an embodiment in which different impedance elements are serially connected. The high voltage light emitting diode chip with the impedance element of the first embodiment and the second embodiment of the present invention can achieve a plurality of different operating voltage characteristics by connecting a plurality of impedance elements 30 in series. Moreover, the impedance element 30 and the light emitting diode are made into a single body, which makes the high voltage light emitting diode more convenient to use and replace.
〈第三实施例一次粘着基台式的高压发光二极管晶片一> <Third embodiment of a high-voltage light-emitting diode chip bonded to a substrate at a time>
请参阅图 3 所示 是本发明的一种次粘着基台（Submoimt)式的高压发 光二极管晶片的实施例的结构剖面示意图。 本实施例的高压发光二极管晶 片， 是操作于一直流电压源的环境中， 其包含有： 一第二基材 50、 至少一 发光二极管晶片 400以及至少一阻抗元件 30其中： Please refer to FIG. 3, which is a cross-sectional view showing the structure of an embodiment of a sub-adhesive high-voltage light-emitting diode chip of the present invention. The high voltage light emitting diode chip of this embodiment is operated in an environment of a DC voltage source, and comprises: a second substrate 50, at least one The LED chip 400 and the at least one impedance element 30 are:
该第二基材 50, 在其一表面上形成有复数条导线 51 , 而导线 51与互 连金属导线 27之间设置有焊锡凸块 52 , 其中第二基材 50实务上可采用印 刷电路板（PCB)、 硅基材及陶瓷， 而陶瓷又可区分为氧化铝（A1203)、 氮化 铝（A1N)、 氧化铍（Be0)、 低温共烧陶瓷及高温共烧陶瓷。  The second substrate 50 is formed with a plurality of wires 51 on one surface thereof, and a solder bump 52 is disposed between the wires 51 and the interconnecting metal wires 27, wherein the second substrate 50 can be practically printed circuit boards. (PCB), silicon substrate and ceramic, and ceramic can be divided into aluminum oxide (A1203), aluminum nitride (A1N), beryllium oxide (Be0), low temperature co-fired ceramics and high temperature co-fired ceramics.
该发光二极管晶片 400, 是形成于第二基材 50上， 其具有： 一第一基 材 10; 及至少一第一发光二极管 20， 形成于第一基材 10上且电性连接于 该些导线 51。 第一发光二极管 20, 形成于第一基材 10上， 其具有： N型半 导体层 21、 欧姆触点 22 : 光放射层 23、 P型半导体层 24、 透明电流扩散层 25、 绝缘层 26及互连金属导线 27 , 其中第一发光二极管 20是为一具有多 重量子井二极管结构的发光二极管， 且其进一步具有一电子黑化层 (Electron blacking layer)结构。  The LED chip 400 is formed on the second substrate 50 and has: a first substrate 10; and at least one first LED 20 formed on the first substrate 10 and electrically connected to the LED substrate 400. Wire 51. The first light emitting diode 20 is formed on the first substrate 10 and has: an N-type semiconductor layer 21, an ohmic contact 22: a light emitting layer 23, a P-type semiconductor layer 24, a transparent current diffusion layer 25, an insulating layer 26, and The interconnecting metal wire 27 is a light emitting diode having a multiple quantum well diode structure, and further having an electro blackening layer structure.
该阻抗元件 30,形成于第二基材 50上，其是电性连接于导线 51且电性 串联于第一发光二极管 20的一侧。 又阻抗元件 30可为一二极管元件，其包 含有： N型半导体层 21及 P型半导体层 24。 又阻抗元件 30亦可以为一电 阻元件。 又二极管元件实务上可采用 PN 二极管（semiconductor n junct ion) 、 萧克利二极管 （Schockley diode) , 异质接面二极管 (semiconductor heterojunct ion) 、 有 机发 光 二 极 管 (organic elec tro-luminescent ma ter ia l s) 或 高分子发光二极管 (polymer electro-luminescent mater ia l s) , 而电阻元件实务上可采用欧姆触点电 阻（Ohmic contact res i s tance)或薄膜绕线式电阻。  The impedance element 30 is formed on the second substrate 50, which is electrically connected to the wire 51 and electrically connected in series to the side of the first LED 20. Further, the impedance element 30 may be a diode element including: an N-type semiconductor layer 21 and a P-type semiconductor layer 24. Further, the impedance element 30 can also be a resistive element. In addition, a diode element may be a PN diode (semiconductor n junct ion), a Schockley diode, a heterojunction diode, or an organic light-emitting diode (organic elec tro-luminescent ma ter ia ls) or Polymer electro-luminescent mater ia ls, and the ohmic contact res is tance or thin film wound resistor can be used for the resistive component.
<第四实施例一次粘着基台式的高压发光二极管晶片二〉 <Fourth Embodiment Once Adhesive Substrate High Voltage Light Emitting Diode Chip II>
将第三实施例的次粘着基台式的高压发光二极管晶片， 其中的第一发 光二极管 20进一步并联极性相反的第二发光二极管 40后，即可操作于一交 流电压源的环境中。 本实施例的次粘着基台式的高压发光二极管晶片，其包 含有： 一第二基材 50、 至少一发光二极管晶片 400、 至少一笫二发光二极 管 40以及至少一阻抗元件 30; 其中： ， 该第二基材 50 , 在其一表面上形成有复数条导线 51 , 而导线 51与互 连金属导线 27之间设置有焊锡凸块 52 , 其中第二基材 50实务上可采用印 刷电路板（PCB)、 硅基材及陶瓷所组成的群组之一。 而陶瓷又可选自氧化 铝）、 氮化铝、 氧化铍、 低温共烧陶瓷及高温共烧陶瓷所组成的群组之一。  The sub-adhesive substrate high voltage light emitting diode chip of the third embodiment, wherein the first light emitting diode 20 is further connected in parallel with the second light emitting diode 40 of opposite polarity, can be operated in an environment of an alternating current voltage source. The sub-adhesive substrate high-voltage LED chip of the embodiment includes: a second substrate 50, at least one LED chip 400, at least one LED 12, and at least one impedance element 30; wherein: The second substrate 50 is formed with a plurality of wires 51 on one surface thereof, and a solder bump 52 is disposed between the wires 51 and the interconnecting metal wires 27, wherein the second substrate 50 can be practically a printed circuit board ( One of the groups consisting of PCB), silicon substrate and ceramic. The ceramic may be selected from the group consisting of aluminum oxide, aluminum nitride, cerium oxide, low temperature co-fired ceramics, and high temperature co-fired ceramics.
该发光二极管晶片 400, 是形成于第二基材 50上， 其具有： 一第一基 材 10; 及至少一第一发光二极管 20， 形成于第一基材 10上且电性连接于 该些导线 51。 第一发光二极管 20， 形成于第一基材 10上， 其是电性连接 于导线 51 , 其具有： N型半导体层 、 欧姆触点 22、 光放射层 23、 P型半 导体层 24、透明电流扩散层 25、绝缘层 26及互连金属导线 27,其中第一发 光二极管 20是为一具有多重量子井二极管结构的发光二极管， 且其进一步 具有一电子黑 b层（Electron blacking layer)结构。 The LED chip 400 is formed on the second substrate 50 and has: a first substrate 10; and at least one first LED 20 formed on the first substrate 10 and electrically connected to the LED substrate 400. Wire 51. The first light emitting diode 20 is formed on the first substrate 10, and is electrically connected to the wire 51, and has: an N-type semiconductor layer, an ohmic contact 22, a light emitting layer 23, and a P-type half. The conductor layer 24, the transparent current diffusion layer 25, the insulating layer 26 and the interconnect metal wire 27, wherein the first light emitting diode 20 is a light emitting diode having a multiple quantum well diode structure, and further has an electron black b layer (Electron Blacking layer) structure.
该第二发光二极管 40 ,形成于第一基材 10或第二基材 50上（如第四实 施例所示）， 第二发光二极管 40的极性与第一发光二极管 20相反， 且第二 发光二极管 40是与第一发光二极管 20并联且电性连接。 第二发光二极管 40的结构、 特性与功效是与第一发光二极管 20相同， 故此不再赘述。  The second LED 40 is formed on the first substrate 10 or the second substrate 50 (as shown in the fourth embodiment). The polarity of the second LED 40 is opposite to that of the first LED 20, and the second The LED 40 is electrically connected in parallel with the first LED 20. The structure, characteristics and efficacy of the second light emitting diode 40 are the same as those of the first light emitting diode 20, and therefore will not be described again.
该阻抗元件 30, 形成于第二基材 50上， 其是电性连接于导线 51且电 性串联于第一发光二极管 20或第二发光二极管 40的一侧。 该阻抗元件 30 包含有： N型半导体层 21、 P型半导体层 24、 介电层 32、 绝缘层 26及导线 51。 又， 该阻抗元件 30亦可以为二极管元件、 电阻元件或容抗元件。 二极 管元件实务上可采用 PN二极管（semiconductor n junct ion) , 萧克利二 极 管 (Schockley diode) 、 异 质 接 面 二 极 管 (semiconductor heterojunct ion) 、 有机发光二极管 (organic electro-luminescentmater ia l s) 或 高分子发光二极管 (polymer electro-luminescent mater ia l s)。 电阻元件实务上可采用欧姆触点电阻（Ohmic contact r e s i s t ance)或薄膜绕线式电阻。  The impedance element 30 is formed on the second substrate 50, and is electrically connected to the wire 51 and electrically connected in series to one side of the first LED 20 or the second LED 40. The impedance element 30 includes an N-type semiconductor layer 21, a P-type semiconductor layer 24, a dielectric layer 32, an insulating layer 26, and a wire 51. Moreover, the impedance element 30 can also be a diode element, a resistance element or a capacitive element. The diode element can be practically used as a PN diode, a Schockley diode, a semiconductor heterojunct ion, an organic electro-luminescent mater ia ls or a polymer light-emitting diode. (polymer electro-luminescent mater ia ls). The ohmic contact resistance (Ohmic contact r e s i s t ance) or the film wound wire type resistor can be used for the resistance element.
〈第五实施例 --二极管发光装置一> <Fifth Embodiment - Diode Light Emitting Device 1>
请参阅图 4所示，是本发明的一种二极管发光装置的实施例结构剖面示 意图。 本实施例的二极管发光装置，是操作于一直流电压源的环境中，其包 含有：一座体结构 200、 至少一具阻抗元件的高压发光二极管晶片 100、 一 取光层 240以及一透镜 250; 其中：  Referring to Figure 4, there is shown a cross-sectional view of an embodiment of a diode lighting device of the present invention. The diode light-emitting device of the present embodiment is operated in a constant-current voltage source environment, comprising: a body structure 200, at least one high-voltage light-emitting diode chip 100 having an impedance element, a light-harvesting layer 240, and a lens 250; among them:
上述的座体结构 200，其具有： 一本体 210、 至少二导线架，例如第一导 线架 220及第二导线架 230。  The above-mentioned base structure 200 has: a body 210, at least two lead frames, such as a first wire frame 220 and a second lead frame 230.
该本体 210, 在本体 210内形成有一晶片基座 211,而晶片基座 211用 以承载具阻抗元件的高压发光二极管晶片 100。  The body 210 has a wafer base 211 formed therein, and the wafer base 211 is used to carry the high voltage LED chip 100 with impedance elements.
该第一导线架 220与第二导线架 230 , 其是由金属材质所构成，每一导 线架是独立且互不电性连结， 又每一导线架是固设于本体 210上。  The first lead frame 220 and the second lead frame 230 are made of a metal material, and each of the lead frames is independently and electrically non-electrically connected, and each of the lead frames is fixed to the body 210.
上述的具阻抗元件的高压发光二极管晶片 100 (如本发明第一实施例的 结构），其笫一基材 10是固设于晶片基座 i内， 而至少一第一发光二极管 The high-voltage light-emitting diode chip 100 having the impedance element (the structure of the first embodiment of the present invention), wherein the first substrate 10 is fixed in the wafer base i, and at least one first light-emitting diode
20是形成于第一基材 10上，其一端藉由第一导线 221电性连接于第一导线 架 220,其中具阻抗元件的高压发光二极管晶片 100特别可由红色、 蓝色及 绿色的二极管晶片加以组合， 但并不限于三种颜色的二极管晶片。 20 is formed on the first substrate 10, one end of which is electrically connected to the first lead frame 220 by the first wire 221, wherein the high-voltage LED chip 100 with the impedance element can be specially made of red, blue and green diode chips. Combined, but not limited to three color diode chips.
该阻抗元件 30,是形成于第一基材 10上， 其一端电性串联于第一发光 二极管 20的另一端， 而阻抗元件 3G的另一端是藉由第二导线 231 电性连 接于第二导线架 230。 The impedance element 30 is formed on the first substrate 10, one end of which is electrically connected in series to the other end of the first LED 20, and the other end of the impedance element 3G is electrically connected by the second wire 231. Connected to the second lead frame 230.
上述的取光层 240,是为一高透光的透明树脂或一透明胶体， 其是用以 覆盖于晶片基座 211 内的已完成导线连结的具阻抗元件的高压发光二极管 晶片 100上， 而取光层 240可进一步摻入一扩散粉； 另外，在取光层 240上 更可形成光波转换层。  The light-receiving layer 240 is a high-transparent transparent resin or a transparent colloid, which is used to cover the high-voltage LED chip 100 with the impedance component connected to the completed wire in the wafer base 211. The light-receiving layer 240 may further incorporate a diffusion powder; in addition, a light-wave conversion layer may be further formed on the light-receiving layer 240.
上述的透镜 250, 是用以结合于本体 210且覆盖于晶片基座 211上，以 使具有阻抗元件的高压发光二极管晶片 100发光时产生最佳的光场分布效 果，而透镜 250可以为玻璃、 透明塑胶或硅胶的材质。  The lens 250 is coupled to the body 210 and covers the wafer base 211 to generate an optimal light field distribution effect when the high-voltage LED chip 100 having the impedance element emits light, and the lens 250 may be glass. Transparent plastic or silicone material.
另外， 上述的具阻抗元件的高压发光二极管晶片 100中，更包含有至少 一第二发光二极管 40 (如第二实施例的结构）， 形成于第一基材 10上， 而第 二发光二极管 40的极性与第一发光二极管 20相反且相互并联， 以操作于 一交流电源环境中。  In addition, the high-voltage LED chip 100 with the impedance component further includes at least one second LED 40 (such as the structure of the second embodiment) formed on the first substrate 10, and the second LED 40. The polarities are opposite to the first light emitting diodes 20 and are connected in parallel to operate in an AC power environment.
〈第六实施例 --二极管发光装置二〉 <Sixth embodiment - diode light-emitting device II>
请参阅图 5 所示， 是本发明的一种二极管发光装置的实施例的结构剖 面示意图。 本发明的一种二极管发光装置， 其包含有： 一座体结构 200、 至 少一次粘着基台式的高压发光二极管晶片 300、 一取光层 240 以及一透镜 250; 其中：  Referring to Fig. 5, there is shown a schematic cross-sectional view showing an embodiment of a diode lighting device of the present invention. A diode lighting device of the present invention comprises: a body structure 200, a high-voltage LED chip 300 with at least one adhesion to the substrate, a light-receiving layer 240, and a lens 250;
上述的座体结构 200，其具有： 一本体 210、 至少二导线架，例如第一导 线架 220及第二导线架 230。  The above-mentioned base structure 200 has: a body 210, at least two lead frames, such as a first wire frame 220 and a second lead frame 230.
该本体 210, 是在本体 210 内形成有一晶片基座 211,而晶片基座 211 用以承载次粘着基台式的高压发光二极管晶片 300。  The body 210 is formed with a wafer base 211 formed in the body 210, and the wafer base 211 is used to carry the sub-adhesive base high voltage light emitting diode chip 300.
该第一导线架 220与第二导线架 230， 是由金属材质所构成，每一导线 架是独立且互不电性连结， 又每一导线架是固设于本体 210上。  The first lead frame 220 and the second lead frame 230 are made of a metal material. Each lead frame is independent and non-electrically connected, and each lead frame is fixed on the body 210.
上述的次粘着基台式的高压发光二极管晶片 300 (如本发明第三实施例 的结构），其包含有： 一第一基材 10、至少一第一发光二极管 20及至少一阻 抗元件 30。  The sub-adhesive substrate high-voltage LED chip 300 (the structure of the third embodiment of the present invention) comprises: a first substrate 10, at least one first LED 20 and at least one impedance element 30.
该第一基材 10, 是固设于晶片基座 211 内， 而第一发光二极管 20,形 成于第一基材 10上， 其一端藉由一第一导线 221电性连接于一第一导线架 220,其中次粘着基台式的高压发光二极管晶片 300特别可由红色、 蓝色及 绿色的二极管晶片加以组合， 但不限于三种颜色的二极管晶片。  The first substrate 10 is fixed in the wafer base 211, and the first LED 20 is formed on the first substrate 10, and one end thereof is electrically connected to a first wire by a first wire 221 The rack 220, wherein the sub-adhesive base high voltage LED chip 300 is particularly combinable by red, blue and green diode chips, but is not limited to three color diode chips.
该阻抗元件 30, 形成于第二基材 50上， 其一端电性串联于第一发光二 极管 20的另一端， 而阻抗元件 30的另一端是藉由一第二导线 231电性连 接于第二导线架 230。  The impedance element 30 is formed on the second substrate 50, one end of which is electrically connected to the other end of the first LED 20, and the other end of the impedance element 30 is electrically connected to the second by a second wire 231. Lead frame 230.
上述的取光层 240，是为一高透光的透明树脂或一透明胶体， 其是用以 覆盖于晶片基座 211 内的已完成导线连结的次粘着基台式的高压发光二极 管晶片 300上， 而取光层 240可进一步掺入一扩散粉； 另夕卜，在取光层 240 上更可形成一光波转换层。 The light-receiving layer 240 is a high-transparent transparent resin or a transparent colloid, which is a sub-adhesive base high-voltage light-emitting diode for covering the completed wire connection in the wafer base 211. On the tube wafer 300, the light-receiving layer 240 may be further doped with a diffusion powder; in addition, a light-wave conversion layer may be further formed on the light-receiving layer 240.
上述的透镜 250 , 是用以结合于本体 210且覆盖于晶片基座 211上，以 使次粘着基台式的高压发光二极管晶片 300 ^光时产生最佳的光场分布效 果，而透镜 250可以为玻璃、 透明塑胶或硅胶的材质。  The lens 250 is coupled to the body 210 and covers the wafer base 211 so that the sub-adhesive base high-voltage LED chip 300 can produce an optimal light field distribution effect, and the lens 250 can be Made of glass, clear plastic or silicone.
另外， 上述的次粘着基台式的高压发光二极管晶片 300 中更包含至少 一第二发光二极管 40 (如第四实施例的结构），形成于第一基材 10或第二基 材 50上， 而第二发光二极管 40的极性与第一发光二极管 20相反且相互并 联，以操作于一交流电源环境中。  In addition, the above-mentioned sub-adhesive substrate high-voltage LED chip 300 further includes at least one second light-emitting diode 40 (such as the structure of the fourth embodiment) formed on the first substrate 10 or the second substrate 50, and The second LEDs 40 are opposite in polarity to the first LEDs 20 and are connected in parallel to operate in an AC power environment.
〈第七实施例--二极管发光装置三〉 <Seventh Embodiment--Diode Light Emitting Device III>
请参阅图 6 所示， 是本发明的一种二极管发光装置的实施例的结构剖 面示意图。 本发明的一种二极管发光装置， 其包含有： 一座体结构 200、 至 少一发光二极管晶片 400、 至少一阻抗元件 30、 一取光层 240以及一透镜 250; 其中：  Referring to Fig. 6, there is shown a schematic cross-sectional view showing an embodiment of a diode lighting device of the present invention. A diode lighting device of the present invention comprises: a body structure 200, at least one LED chip 400, at least one impedance element 30, a light extraction layer 240, and a lens 250;
上述的座体结构 200,其具有： 一本体 210、 至少二导线架例如第一导 线架 220及第二导线架 230。  The above-mentioned base structure 200 has: a body 210, at least two lead frames such as a first wire guide 220 and a second lead frame 230.
该本体 210, 在本体 210内形成有一晶片基座 211,而晶片基座 211用 以承载发光二极管晶片 400。  The body 210 has a wafer base 211 formed therein, and the wafer base 211 is used to carry the LED chip 400.
该第一导线架 220与第二导线架 230, 其是由金属材质所构成，每一导 线架是独立且互不电性连结， 又每一导线架是固设于本体 210上。  The first lead frame 220 and the second lead frame 230 are made of a metal material, and each of the lead frames is independently and electrically non-electrically connected, and each of the lead frames is fixed to the body 210.
上述的发光二极管晶片 400, 其包含有： 笫一基材 10,固设于晶片基座 211 内； 以及至少一第一发光二极管 20, 其形成于第一基材 10上，其一端 藉由第一导线 221电性连接于第一导线架 220。该发光二极管晶片 400至少 包含一红色、 一蓝色及一绿色的二极管晶片。 或者发光二极管晶片 400是 具有至少二种发光颜色， 且覆盖于该发光二极管晶片 400上的该取光层进 一步掺入有一扩散粉。 或者发光二极管晶片 400是为一发蓝光的发光二极 管晶片 400,且覆盖于发光二极管晶片 400上的取光层上进一步覆盖有一光 波转换层。  The LED chip 400 includes: a substrate 10 fixed in the wafer base 211; and at least one first LED 20 formed on the first substrate 10, one end of which is A wire 221 is electrically connected to the first lead frame 220. The LED chip 400 includes at least one red, one blue and one green diode wafer. Or, the LED chip 400 has at least two kinds of illuminating colors, and the light absorbing layer covering the LED chip 400 is further doped with a diffusion powder. Or, the LED chip 400 is a blue light emitting diode chip 400, and the light-trapping layer covering the LED chip 400 is further covered with a light conversion layer.
上述的阻抗元件 30，固设于晶'片基座 211内，其一端电性串联于第一发 光二极管 20的另一端， 又阻抗元件 30的另一端是藉由一第二导线 231 电 性连接于第二导线架 230。 阻抗元件 30是可以为一二极管元件或一电阻元 件。 其中二极管元件是为一 PN二极管（semiconductor n junct ion)、 一 萧克利二极管 (Scliockley diode)、 一异质接面二极管 (semiconduc tor he tero junct ion)、 一有机发光二极管 (organic electro-luminescent mater ia l s) 或一高分子发光二极管 (polymer electro luminescent mater ial s)。 又电阻元件是为可以为一欧姆触点电阻（Ohmic contact res i s tance)或一薄膜绕线式电阻。 The impedance element 30 is fixed in the crystal 'chip base 211, one end of which is electrically connected in series to the other end of the first light emitting diode 20, and the other end of the impedance element 30 is electrically connected by a second wire 231. The second lead frame 230. The impedance element 30 can be a diode element or a resistive element. The diode element is a PN diode (semiconductor n junct ion), a Scliockley diode, a heteroconductor tor ter ter junct ion, an organic electro-luminescent mater ia Ls) or a polymer electroluminescent Mater ial s). The resistive element is either an Ohmic contact res is tance or a thin film wound resistor.
上述的取光层 240， 是为一高透光的透明树脂或一透明胶体， 其是用以 覆盖于曰¾片基座 211 内的已完成导线连结的发光二权管晶片 400上， 而取 光层 240可进一步掺入一扩散粉。 另外，在取光层 240上更可形成光波转换 层。  The light-receiving layer 240 is a high-transparent transparent resin or a transparent colloid, which is used to cover the completed wire-bonded LED tube 400 in the pedestal 211. The light layer 240 may further incorporate a diffusion powder. Further, a light wave conversion layer can be formed on the light extraction layer 240.
上述的透镜 250, 是用以结合于本体 210且覆盖于晶片基座 211上，以 使发光二极管晶片 400发光时产生最佳的光场分布效果， 而透镜 250可以 为玻璃、 透明塑胶或硅胶的材质。  The lens 250 is coupled to the body 210 and covers the wafer base 211 to produce an optimal light field distribution effect when the LED chip 400 emits light. The lens 250 may be glass, transparent plastic or silicone. Material.
另外， 上述的发光二极管晶片 400其更包含有至少一第二发光二极管 40,形成于第一基材 10上，,第二发光二极管 40的极性与第一发光二极管 20 相反且相互并联， 以操作于一交流电源环境中。  In addition, the LED chip 400 further includes at least one second LED 40 formed on the first substrate 10, and the second LED 40 has a polarity opposite to that of the first LED 20 and is connected in parallel with each other. Operates in an AC power environment.
〈第八实施例- -具多段临界电压的高压发光二极管电路一〉 <Eighth Embodiment - High Voltage Light Emitting Diode Circuit with Multi-Stage Threshold Voltage>
请参阅图 7 所示， 是本发明的一种具多段临界电压的发光二极管电路 的实施例的示意图。 本发明的一种具多段临界电压的发光二极管电路，是操 作于一直流电压源的环境中， 其包含有： p 颗相互串联的第一发光二极管 20与 q颗阻抗元件 30; 其中：  Referring to Figure 7, there is shown a schematic diagram of an embodiment of a multi-segment threshold voltage LED circuit of the present invention. An LED circuit having a multi-segment threshold voltage is operated in an environment of a DC voltage source, comprising: p first LEDs 20 and q impedance elements 30 connected in series; wherein:
该 p颗相互串联的第一发光二极管 20, 是为一具有多重量子井二极管 结构的发光二极管， 且其进一步具有一电子黑化层（Electron blacking layer)结构。 又具有多重量子井二极管结构的发光二极管进一步具有一电 子黑化层（Electron blacking layer)结构。  The p-first first light-emitting diode 20 is a light-emitting diode having a multiple quantum well diode structure, and further has an electro blackening layer structure. Further, the light emitting diode having a multiple quantum well diode structure further has an electro blackening layer structure.
该 q颗阻抗元件 30,每一个阻抗元件 30是以一对一方式并联于该些第 一发光二极管 20， 其中阻抗元件 30可以为二极管元件或电阻元件， 而二极 管元件实务上可采用 PN二极管（semiconductor pn junct ion) , 萧克利二 极 管 (Schockley diode) 、 异 质 接 面 二 极 管 (semiconductor hetero junct ion) 、 有机发光二极管 (organic electro-luminescent mater ial s) 或 高 分子发光二极管 (polymer e lectro-luminescent mater ia l s) , 而电阻元件实务上可采用欧姆触点电阻（Ohm'ic contact res i s tance)或薄膜绕线式电阻。 '  The q impedance elements 30, each of which is connected in parallel to the first LEDs 20 in a one-to-one manner, wherein the impedance element 30 can be a diode element or a resistance element, and the diode element can be practically a PN diode ( Semiconductor pn junct ion), Schockley diode, semiconductor hetero junct ion, organic electro-luminescent material s or polymer e lectro-luminescent mater Ia ls) , and the resistance element can be ohmic contact resistance (Ohm'ic contact res is tance) or thin film wound resistor. '
请结合参阅图 8 所示， 是本发明的一种具多段临界电压的发光二极管 电路的示意图。 其中 p的值是为大于或等于二的整数，而 q的值是小于 p的 值（如图 8所示）或等于 p的值（如图 7所示）。 又本实施例的具多段临界电 压的高压发光二极管电路， 其可以制作为一种具多.段临界电压的发光二极 管集成电路。  Please refer to FIG. 8 for a schematic diagram of a multi-segment threshold voltage LED circuit of the present invention. Where the value of p is an integer greater than or equal to two, and the value of q is less than the value of p (as shown in Figure 8) or equal to the value of p (as shown in Figure 7). Further, the high-voltage light-emitting diode circuit of the present embodiment having a multi-stage threshold voltage can be fabricated as a light-emitting diode integrated circuit having a plurality of segment threshold voltages.
请参阅图 9 所示， 是本发明笫八实施例的具多段临界电压的发光二极 管的电压-电流特性曲线图。 本实施例的具多段临界电压的发光二极管的电 压-电流特性曲线图，在图 9中是以 3个发光二极管为例（即 p=3， (1=2)，其中 第一临界电压（ν 小于第二临界电压（V 2) , 而第二临界电压（V 2)小于第 三临界电压（V«'3)。 当电压到达第一临界电压（V !)时， 则第一发光二极管 启动， 当电压到达第一临界电压（V 'h! )时， 则第一发光二极管启动， 当电压 到达第二临界电压（Vth2)时， 则第一及第二发光二极管均会启动，当电压到 达第三临界电压（Vth3)时，则第一、 第二及第三发光二极管均会启动。 通过 阻抗元件的阻值匹配设计可使发光二极管电路具有多段临界电压的启动特 性，如此无需使用额外的开关电路进行控制， 即可达到分段启动发光二极管 照明的效果， 更可以进一步达到降低制造成本的目的。 Please refer to FIG. 9 , which is a light-emitting diode with multiple threshold voltages according to the eighth embodiment of the present invention. The voltage-current characteristic of the tube. The voltage-current characteristic diagram of the light-emitting diode with multiple threshold voltages of this embodiment is exemplified by three light-emitting diodes in FIG. 9 (ie, p=3, (1=2), where the first threshold voltage (ν) Less than the second threshold voltage (V 2 ), and the second threshold voltage (V 2 ) is less than the third threshold voltage (V«' 3 ). When the voltage reaches the first threshold voltage (V ! ), the first LED starts up When the voltage reaches the first threshold voltage (V 'h! ), the first LED is activated, and when the voltage reaches the second threshold voltage (Vth2), the first and second LEDs are activated, when the voltage reaches At the third threshold voltage (Vth3), the first, second and third light-emitting diodes are all activated. The resistance matching design of the impedance element enables the light-emitting diode circuit to have multiple threshold voltage start-up characteristics, so that no additional use is required. By controlling the switching circuit, the effect of segmenting the LED illumination can be achieved, and the manufacturing cost can be further reduced.
〈第九实施例一具多段临界电压的高压发光二极管电路二〉 <Ninth Embodiment A High Voltage Light Emitting Diode Circuit with Multiple Segment Threshold Voltages>
请参阅图 10所示， 是本发明的一种具多段临界电压的发光二极管电路 的实施例的示意图。 本发明的一种具多段临界电压的发光二极管电路，是操 作于一交流电压源的环境中， 其包含有： p颗相互串联的第一发光二极管 20、 q颗第一阻抗元件 34、 m颗相互串联的第二发光二极管 40及 n颗第二 阻抗元件 36; 其中：  Referring to FIG. 10, it is a schematic diagram of an embodiment of a light-emitting diode circuit having a multi-segment threshold voltage according to the present invention. An LED circuit having a multi-segment threshold voltage is operated in an environment of an AC voltage source, comprising: p first LEDs 20 connected in series with each other, q first impedance elements 34, m a second light emitting diode 40 and n second impedance elements 36 connected in series with each other; wherein:
该 p颗相互串联的第一发光二极管 20，是为一具有多重量子井二极管结 构的发光二极管，且其进一步具有一电子黑化层（Electron blacking layer)结构。  The first light-emitting diode 20, which is connected in series with each other, is a light-emitting diode having a multiple quantum well diode structure, and further has an electro blackening layer structure.
该 q颗第一阻抗元件 34，每一第一阻抗元件 34是以一对一方式并联于 —第一发光二极管 20, 其中第一阻抗元件 34为二极管元件、 电阻元件或容 抗元件， 而二极管元件实务上可采用 PN 二极管（semiconductor n junct ion) 、 萧克利二极管 （Schockley diode) 、 异质接面二极管 (semiconductor hetero junct ion) 、 有 机发 光二 极 管 (organic electro-luminescent ma ter ial s) 或 高分子发光二极管 (polymer e lectro- luminescent mater ia l s) , 而电阻元件实务上可釆用歐姆触点电 阻（Ohmic contact res i s tance)或薄膜绕线式电阻。  The q first impedance elements 34, each of the first impedance elements 34 are connected in parallel to the first light emitting diode 20, wherein the first impedance element 34 is a diode element, a resistive element or a capacitive element, and the diode PN diodes, Schockley diodes, semiconductor heterojunes, organic electro-luminescent ma ter ials, or polymers can be used for component practice. A light-emitting diode (polymer e lectro- luminescent mater ia ls), and the resistive element can be practically used with Ohmic contact res is tance or thin film wound resistor.
该 m颗相互串联的第二发光二极管 40 ,是并联于 p颗相互串联的第一发 光'二极管 20，且第二发光二极管 40的极性是与第一发光二极管 20相反。第 二发光二极管 40的结构、 特性与功效是与第一发光二极管 20相同，故此不 再赘述。 The m second light emitting diodes 40 connected in series are connected in parallel to the p first light emitting diodes 20 connected in series, and the polarity of the second light emitting diode 40 is opposite to that of the first light emitting diode 20. The structure, characteristics and efficacy of the second LED 40 are the same as those of the first LED 20 , and therefore will not be described again.
该 11颗第二阻抗元件 36 ,每一第二阻抗元件 36是以一对一方式并联于 —该些第二发光二极管 40 , 其中第二阻抗元件 36为二极管元件、 电阻元件 或容抗元件， 而二极管元件实务上可采用 PN 二极管（semi conductor pn junc t ion) 、 萧克利二极管 （Schockl ey diode) 、 异质接面二极管 (semiconductor hetero junct ion) 、 有 机发 光 二 极 管 (organic electro-luminescent materials) 或 高 分子发光二极管 (polymer electro-luminescent materials) , 而电阻元件实务上可采用欧姆触点电 阻（Ohmic contact resistance)或薄膜绕线式电阻。 The second impedance elements 36 are each connected in parallel to the second light emitting diodes 40, wherein the second impedance elements 36 are diode elements, resistive elements or capacitive reactance elements. The diode element can be practically used as a semiconductor (semi-conductor pn junc ion), a Schickle diode (Schockl ey diode), and a heterojunction diode. (semiconductor hetero junct ion), organic electro-luminescent materials or polymer electro-luminescent materials, and the resistance element can be ohmic contact resistance or film winding. Resistance.
请再结合参阅图 11、 图 12所示，是本发明的一种具多段临界电压的发 光二极管电路的实施例的示意图。 其中 p值及 m值是为大于或等于二的整 数，而 q值是为小于 p的整数 (如图 11所示）， 或等于 p的整数 (如图 10所 示），而 n值是小于（如图 11所示）或等于 m的整数 (如图 12所示）。 又本实 施例的具多段临界电压的高压发光二极管电路， 其是为一种具多段临界电 压的发光二极管集成电路。  Referring to FIG. 11 and FIG. 12, it is a schematic diagram of an embodiment of a light-emitting diode circuit having a plurality of threshold voltages according to the present invention. Wherein the p value and the m value are integers greater than or equal to two, and the q value is an integer less than p (as shown in FIG. 11), or an integer equal to p (as shown in FIG. 10), and the value of n is less than (as shown in Figure 11) or an integer equal to m (as shown in Figure 12). Further, the high voltage light emitting diode circuit having a plurality of threshold voltages of the embodiment is a light emitting diode integrated circuit having a plurality of critical voltages.
请参阅图 13所示， 是本发明第九实施例的具多段临界电压的发光二极 管的电压-电流特性曲线图。 本实施例的具多段临界电压的发光二极管的电 压 -电流特性曲线图， 而在图 13 中是以正半周交流电源举例说明， 其中第 一临界电压（Vfti)小于第二临界电压（V 2) , 而第二临界电压（V 2)小于第三 临界电压（V 3) , 其分别对应三个时间点（第一时间 tl， 第二时间 t2、 笫^. 时间 t3)。本发明实施例的具多段临界电压的发光二极管电路亦可制作成集 成电路。 Referring to FIG. 13, there is shown a voltage-current characteristic diagram of a light-emitting diode having a plurality of threshold voltages according to a ninth embodiment of the present invention. The voltage-current characteristic diagram of the light-emitting diode with multi-segment threshold voltage of this embodiment, and in FIG. 13 is an example of a positive half-cycle AC power supply, wherein the first threshold voltage (Vfti) is smaller than the second threshold voltage (V 2 ) And the second threshold voltage (V 2 ) is smaller than the third threshold voltage (V 3 ), which respectively correspond to three time points (first time t1, second time t2, 笫^. time t3). The LED circuit with multi-segment threshold voltage in the embodiment of the invention can also be fabricated into an integrated circuit.
藉由这种具多段临界电压的高压发光二极管电路及其二极管发光装 置，使发光二极管电路具有多段临界电压的启动特性， 如此无需使用额外的 开关电路进行控制， 即可达到分段启动发光二极管照明的效果， 更可以进 一步达到降低制造成本的目的， 且采用阻值匹配与并联设计的方式除了使 发光二极管电路可应用的电压规格更为广泛之外， 在部分发光二极管发生 故障时， 仍可继续维持正常照明， 在使用上亦较为便利。 工业应用性  The high-voltage LED circuit with multi-segment threshold voltage and its diode illuminating device enable the LED circuit to have multi-stage threshold voltage starting characteristics, so that step-by-step LED illumination can be achieved without using an additional switching circuit for control. The effect can further reduce the manufacturing cost, and the resistance matching and parallel design can not only apply the voltage specifications of the LED circuit, but also can continue in the case of partial LED failure. Maintaining normal lighting is also convenient in use. Industrial applicability
本发明具有以下广泛的工业应用性及其优点：  The invention has the following broad industrial applicability and its advantages:
1、 本发明釆用阻抗元件的阻值匹配设计， 使发光二极管电路可使用的 电源规格不再局限于特定电压（Vth)倍数（即 3V、 6V、 9V、 12……等等），可 以大为提升可应用的电压规格范围， 非常适于实用。  1. The resistance matching design of the impedance element of the present invention enables the power supply specification of the LED circuit to be no longer limited to a specific voltage (Vth) multiple (ie, 3V, 6V, 9V, 12, etc.), which can be large. It is ideal for practical use in order to increase the range of voltage specifications that can be applied.
3、 本发明采用并联回路设计， 当发光二极管电路中的发光二极管发生 故障时， 其余未发生故障的发光二极管仍然可以维持正常的照明， 而可以 大幅提升使用的便利性。  3. The invention adopts a parallel circuit design. When the LED in the LED circuit fails, the remaining LEDs that have not failed can still maintain normal illumination, and the convenience of use can be greatly improved.
3、 本发明采用多.段临界电压的设计， 使发光二极管可依照设计的临界 电压值启动照明， 而可代替以往使用开关电路进行分段控制的结构设计，能 够降低照明产品的制造成本。  3. The invention adopts a multi-section threshold voltage design, so that the LED can start illumination according to the designed critical voltage value, and can replace the structural design of the segment control using the switch circuit in the past, which can reduce the manufacturing cost of the illumination product.
以上所述， 仅是本发明的较佳实施例而已， ·并非对本发明作任何形式 上的限制， 虽然本发明已以较佳实施例揭露如上， 然而并非用以限定本发 明，任何熟悉本专业的技术人员， 在不脱离本发明技术方案范围内，当可利 用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例，但 凡是未脱离本发明技术方案内容， 依据本发明的技术实质对以上实施例所 作的任何简单修改、 等同变化与修饰,均仍属于本发明技术方案的范围内。 The above description is only a preferred embodiment of the present invention, and is not intended to be in any form for the present invention. The present invention has been disclosed in the above preferred embodiments, but is not intended to limit the present invention, and those skilled in the art can utilize the above disclosed technical contents without departing from the scope of the present invention. Any equivalent modifications, equivalent changes, and modifications made to the above embodiments in accordance with the technical spirit of the present invention are still present in the present invention without departing from the scope of the present invention. Within the scope of the inventive solution.

Claims

权 利 要 求 Rights request
1、 一种具阻抗元件的高压发光二极管晶片，其特征在于其包含有： 一第一基材； What is claimed is: 1. A high voltage light emitting diode chip having an impedance element, comprising: a first substrate;
至少一第一发光二极管，形成于该第一基材上； 以及  At least one first light emitting diode formed on the first substrate;
至少一阻抗元件，形成于该第一基材上且电性串联于该第一发光二极 管的一端。  At least one impedance element is formed on the first substrate and electrically connected in series to one end of the first light emitting diode.
2、 根据权利要求 1 所述的具阻抗元件的高压发光二极管晶片，其特征 在于其中所述的阻抗元件是为一二极管元件或一电阻元件。  2. The high voltage light emitting diode chip with impedance element according to claim 1, wherein the impedance element is a diode element or a resistance element.
3、 一种具阻抗元件的高压发光二极管晶片，其特征在于其包含有： 一第一基材；  3. A high voltage light emitting diode chip having an impedance element, comprising: a first substrate;
至少一第一发光二极管，形成于该第一基材上；  At least one first light emitting diode formed on the first substrate;
至少一第二发光二极管，形成于该第一基材上，该第二发光二极管的极 性与该第一发光二极管相反且该第二发光二极管是与该第一发光二极管并 联； 以及  At least one second light emitting diode is formed on the first substrate, the polarity of the second light emitting diode is opposite to the first light emitting diode and the second light emitting diode is connected in parallel with the first light emitting diode;
至少一阻抗元件，形成于该第一基材上且电性串联于该第一发光二极 管或该第二发光二极管的一侧。  At least one impedance element is formed on the first substrate and electrically connected in series to one side of the first light emitting diode or the second light emitting diode.
4、 根据权利要求 3所述的具阻抗元件的高压发光二极管晶片，其特征 在于其中所述的阻抗元件是为一二极管元件、 一电阻元件或一容抗元件。  4. The high voltage light emitting diode chip with impedance element according to claim 3, wherein the impedance element is a diode element, a resistance element or a capacitive element.
5、 一种次粘着基台（Submount)式的高压发光二极管晶片，其特征在于 其包含有：  5. A submount-type high voltage light emitting diode chip, characterized in that it comprises:
一第二基材，该第二基材上形成有复数条导线；  a second substrate, the second substrate is formed with a plurality of wires;
至少一发光二极管晶片，是形成于第二基材上,其具有：  At least one LED chip is formed on the second substrate and has:
一第一基材； 及  a first substrate; and
至少一第一发光二极管，形成于该第一基材上且电性连接于该些 导线； 以及  At least one first light emitting diode formed on the first substrate and electrically connected to the wires;
至少一阻抗元件， 形成于该第二基材上，该阻抗元件是电性连接于该些 导线且电性串联于该第一发光二极管的一侧。  The at least one impedance element is formed on the second substrate, and the impedance element is electrically connected to the wires and electrically connected in series to one side of the first LED.
6、 根据权利要 5 所述的次粘着基台式的高压发光二极管晶片，其特 征在于其中所述的第二基材是选自印刷电路板 (PCB)、 硅基材及陶瓷所组成 的群组之一。  6. The sub-adhesive substrate high voltage light emitting diode chip according to claim 5, wherein the second substrate is selected from the group consisting of a printed circuit board (PCB), a silicon substrate, and a ceramic. one.
7、 根据权利要求 6所述的次粘着基台式的高压发光二极管晶片，其特 征在于其中所述的陶瓷是选自氧化铝（A1203)、 氮化铝（A1N)、 氧化铍 (Be0)、. 低溫共烧陶瓷（LTCC)及高温共烧陶瓷（HTCC)所组成的群组之一。 7. The sub-adhesive submount high voltage light emitting diode wafer according to claim 6, wherein said ceramic is selected from the group consisting of alumina (A1 2 0 3 ), aluminum nitride (A1N), and antimony oxide (Be0). One of the groups consisting of low temperature co-fired ceramics (LTCC) and high temperature co-fired ceramics (HTCC).
8、 根据权利要求 5 所述的次粘着基台式的高压发光二极管晶片，其特 征在于其中所述的阻抗元件是为一二极管元件或一电阻元件。 8. The sub-adhesive submount high voltage light emitting diode chip according to claim 5, wherein The impedance element described therein is a diode element or a resistance element.
9、 一种次粘着基台（Submount)式的高压发光二极管晶片，其特征在于 其包含有：  9. A submount-type high voltage light emitting diode chip, characterized in that it comprises:
一第二基材,该第二基材上形成有复数条导线；  a second substrate, the second substrate is formed with a plurality of wires;
至少一发光二极管晶片，是形成于第二基材上,其具有：  At least one LED chip is formed on the second substrate and has:
一第一基材； 及  a first substrate; and
至少一第一发光二极管，形成于该第一基材上且电性连接于该些 导线；  At least one first light emitting diode is formed on the first substrate and electrically connected to the wires;
至少一第二发光二极管，形成于该第一基材或该第二基材上， 该第二发 光二极管的极性与该第一发光二极管相反且该第二发光二极管是与该第一 发光二极管并联且电性连接； 以及  Forming at least one second light emitting diode on the first substrate or the second substrate, the polarity of the second light emitting diode is opposite to the first light emitting diode, and the second light emitting diode is opposite to the first light emitting diode Parallel and electrically connected;
至少一阻抗元件， 形成于该第二基材上， 该阻抗元件是电性连接于该 些导线且电性串联于该第一发光二极管或该第二发光二极管的一侧。  The at least one impedance element is formed on the second substrate, and the impedance element is electrically connected to the wires and electrically connected in series to one side of the first LED or the second LED.
10、 根据权利要求 9所述的次粘着基台式的高压发光二极管晶片，其特 征在于其中所述的第二基材是选自印刷电路板 (PCB)、 硅基材及陶瓷所组成 的群组之一。  10. The sub-adhesive substrate high voltage light emitting diode chip according to claim 9, wherein said second substrate is selected from the group consisting of a printed circuit board (PCB), a silicon substrate, and a ceramic. one.
11、 根据权利要求 10所述的次粘着基台式的高压发光二极管晶片，其 特征在于其中所述的陶瓷是选自氧化铝、 氮化铝、 氧化铍、 低温共烧陶瓷 及高温共烧陶瓷所组成的群组之一。  11. The sub-adhesive substrate high voltage light emitting diode chip according to claim 10, wherein said ceramic is selected from the group consisting of alumina, aluminum nitride, cerium oxide, low temperature co-fired ceramics, and high temperature co-fired ceramics. One of the grouped groups.
12、 根据权利要求 9所述的次粘着基台式的高压发光二极管晶片，其特 征在于其中所述的阻抗元件是为一二极管元件、 一电阻元件或一容抗元件。  A sub-adhesive submount high voltage light emitting diode chip according to claim 9, wherein said impedance element is a diode element, a resistive element or a capacitive reactance element.
13、 一种二极管发光装置，其特征在于其包括：  13. A diode lighting device, characterized in that it comprises:
一座体结构，其具有：  a body structure with:
. 一本体， 在该本体内形成有一晶片基座; 及  a body having a wafer base formed therein; and
至少二导线架， 每一该导线架是独立且互不电性连结，又每一该导 线架是固设于该本体上；  At least two lead frames, each of which is independent and non-electrically connected, and each of the lead frames is fixed on the body;
至少一具阻抗元件的高压发光二极管晶片，其包含有：  At least one high voltage light emitting diode chip having an impedance element, comprising:
一第一基材， 固设于该晶片基座内；  a first substrate is fixed in the wafer base;
至少一第一发光二极管，形成于该第一基材上，其一端藉由一第一 导线电性连接于一该导线'架； 及  The at least one first light emitting diode is formed on the first substrate, and one end thereof is electrically connected to a lead frame by a first wire; and
至少一阻抗元件， 形成于该第一基材上， 其一端电性串联于该第 一发光二极管的另一端， 又该阻抗元件的另一端是藉由一第二导线电性连 接于另一该导线架；  The at least one impedance element is formed on the first substrate, one end of the impedance element is electrically connected to the other end of the first LED, and the other end of the impedance element is electrically connected to the other by a second wire. Lead frame
一取光层， 覆盖于该晶片基座内的已完成该些导线连结的该高压发光 二极管晶片上； 以及  a light absorbing layer covering the high voltage light emitting diode chip in the wafer pedestal on which the wire bonds are completed;
—透镜， 结合于该本体且覆盖于该晶片基座上。 a lens coupled to the body and overlying the wafer pedestal.
14、 根据权利要求 13所述的二极管发光装置， 其特征在于其中所述的 具阻抗元件的高压发光二极管晶片更包含有至少一第二发光二极管， 形成 于该第一基材上， 该第二发光二极管的极性与该第一发光二极管相反且相 互并联。 The diode light emitting device of claim 13 , wherein the high voltage light emitting diode chip with the impedance element further comprises at least one second light emitting diode formed on the first substrate, the second The polarities of the light emitting diodes are opposite to the first light emitting diodes and are connected in parallel with each other.
15、 根据权利要求 13所述的二极管发光装置， 其特征在于其中所述的 具阻抗元件的高压发光二极管晶片至少包含一红色、 一蓝色及一绿色的二 极管晶片。  15. The diode lighting device of claim 13, wherein the high voltage LED chip with the impedance element comprises at least one red, one blue and one green diode wafer.
16、 根据权利要求 13所述的二极管发光装置， 其特征在于其中所述的 具阻抗元件的高压发光二极管晶片是具有至少二种发光颜色 , 且覆盖于该 些具阻抗元件的高压发光二极管晶片上的该取光层进一步掺入有一扩散 粉。  16. The diode lighting device of claim 13, wherein the high voltage LED chip with the impedance element has at least two illuminating colors and covers the high voltage LED chip with the impedance element. The light-receiving layer is further doped with a diffusion powder.
17、 根据权利要求 13所述的二极管发光装置， 其特征在于其中所述的 具阻抗元件的高压发光二极管晶片是为一发蓝光的具阻抗元件的高压发光 二极管晶片， 且覆盖于该具阻抗元件的高压发光二极管晶片上的该取光层 上进一步覆盖有一光波转换层。  17. The diode lighting device of claim 13, wherein the high voltage light emitting diode chip with the impedance element is a blue light high voltage light emitting diode chip with an impedance element, and covers the impedance element. The light-trapping layer on the high-voltage LED chip is further covered with a light conversion layer.
18、 根据权利要求 13 所述的二极管发光装置，其特征在于其中所述的 取光层是为一高透光的透明树脂或一透明胶体。  18. The diode lighting device of claim 13, wherein the light-harvesting layer is a transparent resin or a transparent colloid.
19、 根据权利要求 13 所述的二极管发光装置，其特征在于其中所述的 透镜是为一玻璃或一透明塑胶或一硅胶的材质。  19. The diode lighting device of claim 13, wherein the lens is made of a glass or a transparent plastic or a silica gel.
20、 一种二极管发光装置，其特征在于其包括：  20. A diode lighting device, characterized in that it comprises:
一座体结构， 其具有：  a body structure with:
一本体， 在该本体内形成有一晶片基座； 及  a body having a wafer base formed therein; and
至少二导线架， 每一该导线架是独立且互不电性连结，又每一该导 线架是固设于该本体上；  At least two lead frames, each of which is independent and non-electrically connected, and each of the lead frames is fixed on the body;
至少一次粘着基台式的高压发光二极管晶片，其包含有：  A high-voltage LED chip bonded to the substrate at least once, comprising:
一第一基材， 固设于该晶片基座内；  a first substrate is fixed in the wafer base;
至少一第一发光二极管， 形成于该第一基材上， 其一端藉由一第 一导线电性连接于一该导线架； 及  At least one first light emitting diode is formed on the first substrate, and one end thereof is electrically connected to a lead frame by a first wire;
至少一阻抗元件， 形成于该第二基材上， 其一端电性串联于该第 一发光二极管的另一端， 又该阻抗元件的另一端是藉由一第二导线电性连 接于另一该导线架；  The at least one impedance element is formed on the second substrate, one end of the impedance element is electrically connected to the other end of the first LED, and the other end of the impedance element is electrically connected to the other by a second wire. Lead frame
一取光层， 覆盖于该晶片基座内的已完成该些导线连结的该次粘着基 台式的高压发光二极管晶片上； 以及  a light-receiving layer overlying the high-voltage light-emitting diode chip of the adhesive substrate on the wafer base that has completed the wire bonding;
一透镜， 结合于该本体且覆盖于该晶片基座上。  A lens is coupled to the body and overlies the wafer base.
21、 根据权利要求 20所述的二极管发光装置， 其特征在于其中所述的 次粘着基台式的高压发光二极管晶片更包含有至少一第二发光二极管，形 成于该第一基材上， 该第二发光二极管的极性与该第一发光二极管相反且 相互并联。 The diode lighting device of claim 20, wherein the sub-adhesive base high voltage light emitting diode chip further comprises at least one second light emitting diode. Formed on the first substrate, the second light emitting diode has a polarity opposite to the first light emitting diode and is connected in parallel with each other.
22、 根据权利要求 20所述的二极管发光装置， 其特征在于其中所述的 次粘'着基台式的高压发光二极管晶片至少包含一红色、 一蓝色及一绿色的 二极管晶片。  22. The diode lighting device of claim 20, wherein said sub-bonded high-voltage LED chip comprises at least one red, one blue and one green diode wafer.
23、 根据权利要求 20所述的二极管发光装置， 其特征在于其中所述的 次粘着基台式的高压发光二极管晶片是具有至少二种发光颜色， 且覆盖于 该次粘着基台式的高压发光二极管晶片上的该取光层进一步掺入有一扩散 粉。  23. The diode lighting device of claim 20, wherein said sub-adhesive base high voltage light emitting diode chip is a high voltage light emitting diode chip having at least two illuminating colors and covering the submount. The light taking layer on the upper layer is further doped with a diffusion powder.
24、 根据权利要求 20所述的二极管发光装置， 其特征在于其中所述的 次粘着基台式的高压发光二极管晶片是为一发蓝光的次粘着基台式的高压 发光二极管晶片， 且覆盖于该次粘着基台式的高压发光二极管晶片上的该 取光层上进一步覆盖有一光波转换层。  The diode lighting device of claim 20, wherein the sub-adhesive base high voltage light emitting diode chip is a blue light sub-adhesive sub-high voltage light emitting diode chip, and covers the time. The light-trapping layer on the high-voltage LED chip of the adhesive substrate is further covered with a light conversion layer.
25、 根据权利要求 20所述的二极管发光装置，其特征在于其中所述的 取光层是为一高透光的透明树脂或一透明胶体。 . '  The diode lighting device of claim 20, wherein the light-harvesting layer is a transparent resin or a transparent colloid. . '
26、 根据权利要求 20所述的二极管发光装置，其特征在于其中所述的 透镜是为一玻璃或一透明塑胶或一硅胶的材质。  The diode lighting device of claim 20, wherein the lens is made of a glass or a transparent plastic or a silica gel.
27、 一种二极管发光装置，其特征在于其包括：  27. A diode lighting device, characterized in that it comprises:
一座体结构， 其具有：  a body structure with:
一本体， 在该本体内形成有一晶片基座； 及  a body having a wafer base formed therein; and
至少二导线架， 每一该导线架是独立且互不电性连结，又每一该导 线架是固设于该本体上；  At least two lead frames, each of which is independent and non-electrically connected, and each of the lead frames is fixed on the body;
至少一发光二极管晶片，其包含有：  At least one LED chip, comprising:
一第一基材， 固设于该晶片基座内； 及  a first substrate fixed in the wafer base; and
至少一第一发光二极管，形成于该第一基材上，其一端藉由一第一导线 电性连接于一该导线架；  At least one first light emitting diode is formed on the first substrate, and one end thereof is electrically connected to a lead frame by a first wire;
至少一阻抗元件， 固设于该晶片基座内， 其一端电性串联于该第一发 光二极管的另一端，又该阻抗元件的另一端是藉由一第二导线电性连接于 另一该导线架；  The at least one impedance element is fixed in the base of the wafer, one end of the impedance element is electrically connected to the other end of the first light emitting diode, and the other end of the impedance element is electrically connected to the other by a second wire. Lead frame
一取光层， 覆盖于该晶片基座内的已完成该些导线连结的该发光二极 管晶片及该阻抗元件上； 以及  a light-receiving layer covering the light-emitting diode chip and the impedance element in the wafer base on which the wire connections are completed;
一透镜， 结合于该本体且覆盖于该晶片基座上。  A lens is coupled to the body and overlies the wafer base.
28、 根据权利要求 27 所述的二极管发光装置，其特征在于其中所述的 阻抗元件是为一二极管元件或一电阻元件。  28. A diode lighting device according to claim 27, wherein said impedance element is a diode element or a resistive element.
29、 根据权利要求 27所述的二极管发光装置， 其特征在于其中所述的 发光二极管晶片更包含有至少一第二发光二极管， 形成于该第一基材上，该 第二发光二极管的极性与该第一发光二极管相反且相互并联。 The diode light emitting device of claim 27, wherein the LED chip further comprises at least one second light emitting diode formed on the first substrate, The polarity of the second light emitting diode is opposite to the first light emitting diode and is connected in parallel with each other.
30、 根据权利要求 27所述的二极管发光装置， 其特征在于其中所述的 发光二极管晶片至少包含一红色、 一蓝色及一绿色的二极管晶片。  30. A diode lighting device according to claim 27, wherein said LED chip comprises at least one red, one blue and one green diode wafer.
31、 粮据权利要求 43所述的二极管发光装置， 其特征在于其中所述的 发光二极管晶片是具有至少二种发光颜色， 且覆盖于该发光二极管晶片上 的该取光层进一步掺入有一扩散粉。  The diode light-emitting device of claim 43, wherein the light-emitting diode chip has at least two kinds of light-emitting colors, and the light-trapping layer covering the light-emitting diode chip is further doped with a diffusion. powder.
32、 根据权利要求 27 所述的二极管发光装置，其特征在于其中所述的 发光二极管晶片是为一发蓝光的发光二极管晶片，且覆盖于该发光二极管 晶片上的该取光层上进一步覆盖有一光波转换层。  32. The diode lighting device of claim 27, wherein the LED chip is a blue light emitting diode chip, and the light taking layer covering the LED chip is further covered with a light-emitting layer Lightwave conversion layer.
33、 根据权利要求 27 所述的二极管发光装置，其特征在于其中所述的 取光层是为一高透光的透明树脂或一透明胶体。  33. The diode lighting device of claim 27, wherein the light-harvesting layer is a transparent resin or a transparent colloid.
34、 根据权利要求 27 所述的二极管发光装置，其特征在于其中所述的 透镜是为一玻璃或一透明塑胶或一硅胶的材质。  34. The diode lighting device of claim 27, wherein the lens is made of a glass or a transparent plastic or a silica gel.
35、 一种具多段临界电压的高压发光二极管电路,其是操作于一直流电 压源的环境中， 其特征在于其包括：  35. A high voltage light emitting diode circuit having a plurality of threshold voltages, which is operated in an environment of a DC voltage source, characterized in that it comprises:
p颗相互串联的发光二极管； 以及  p LEDs connected in series with each other;
q 颗阻抗元件，每一该阻抗元件是以一对一方式并联于该些发光二极 管；  q impedance elements, each of the impedance elements being connected in parallel to the light emitting diodes in a one-to-one manner;
其中，该 p的值是为大于或等于二的整数,该 q的值是小于或等于该 p 的值。  Wherein, the value of p is an integer greater than or equal to two, and the value of the q is less than or equal to the value of the p.
36、 根据权利要求 35 所述具多段临界电压的高压发光二极管电路，其 特征在于其中所述的阻抗元件是为一二极管元件或一电阻元件。  36. A high voltage light emitting diode circuit having a plurality of threshold voltages according to claim 35, wherein said impedance element is a diode element or a resistive element.
37、 根据权利要求 35 所述具多段临界电压的高压发光二极管电路,其 特征在于其是为一种具多段临界电压的发光二极管集成电路。  37. A high voltage light emitting diode circuit having a plurality of threshold voltages according to claim 35, characterized in that it is a light emitting diode integrated circuit having a plurality of threshold voltages.
38、 一种具多段临界电压的高压发光二极管电路,其是操作于一交流电 压源的环境中， 其特征在于其包括：  38. A high voltage light emitting diode circuit having a plurality of threshold voltages, which is operated in an environment of an alternating current voltage source, characterized in that it comprises:
p颗相互串联的第一发光二极管；  p first light emitting diodes connected in series with each other;
q颗第一阻抗元件 ,每一该第一阻抗元件是以一对一方式并联于一该第 一发光二极管； . .  q first impedance elements, each of the first impedance elements being connected in parallel to a first one of the first light emitting diodes;
m颗相互串联的第二发光二极管是并联于 p颗相互串联的该些第一发光 二极管，且该些第二发光二极管的极性是与该些第一发光二极管相反； 以及 n颗第二阻抗元件，每一该第二阻抗元件是以一对一方式并联于一该第 二发光二极管；  m second light emitting diodes connected in series are connected in parallel to the first light emitting diodes connected in series with each other, and the polarities of the second light emitting diodes are opposite to the first light emitting diodes; and n second impedances Each of the second impedance elements is connected in parallel to one of the second light emitting diodes in a one-to-one manner;
其中.,该 p及该 m是为大于或等于二的整数,该 q是小于或等于该 p整 数,该 n是小于或等于该 in的整数。  Wherein, the p and the m are integers greater than or equal to two, and the q is less than or equal to the p integer, and the n is an integer less than or equal to the in.
39、 根据权利要求 38 所述具多段临界电压的高压发光二极管电路，其 特征在于其中所述的第一阻抗元件是为一二极管元件或一电阻元件或一容 抗元件。 39. The high voltage light emitting diode circuit with multi-segment threshold voltage according to claim 38, The first impedance element is characterized in that it is a diode element or a resistance element or a capacitive element.
40、 根据权利要求 38 所述具多段临界电压的高压发光二极管电路,其 特征在于其中所述的第二阻抗元件是为一二极管元件或一电阻元件或一容 抗元件。  40. A high voltage light emitting diode circuit having a plurality of threshold voltages according to claim 38, wherein said second impedance element is a diode element or a resistive element or a capacitive element.
41、 根据权利要求 38 所述具多段临界电压的高压发光二极管电路，其 特征在于其是为一种具多段临界电压的发光二极管集成电路。  41. A high voltage light emitting diode circuit having a plurality of threshold voltages according to claim 38, characterized in that it is a light emitting diode integrated circuit having a plurality of threshold voltages.
PCT/CN2006/001938 2006-08-02 2006-08-02 A light emitting diode circuit having a plurality of critical voltages and a light emitting diode device WO2008017207A1 (en)

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