WO2008010793A2 - A stacked light-emitting device and fabrication thereof - Google Patents

A stacked light-emitting device and fabrication thereof Download PDF

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Publication number
WO2008010793A2
WO2008010793A2 PCT/US2006/027906 US2006027906W WO2008010793A2 WO 2008010793 A2 WO2008010793 A2 WO 2008010793A2 US 2006027906 W US2006027906 W US 2006027906W WO 2008010793 A2 WO2008010793 A2 WO 2008010793A2
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Prior art keywords
light
emitting device
emitting
emitting diode
substrate
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PCT/US2006/027906
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French (fr)
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WO2008010793A3 (en
Inventor
Shen-Nan Tong
Shi-Shya Chang
Kuo-Feng Tung
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Intex Recreation Corp.
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Priority to PCT/US2006/027906 priority Critical patent/WO2008010793A2/en
Publication of WO2008010793A2 publication Critical patent/WO2008010793A2/en
Publication of WO2008010793A3 publication Critical patent/WO2008010793A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73257—Bump and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Definitions

  • the present invention relates to a stacked light-emitting device, in particular, to a stacked light-emitting device having two sets of light- emitting diode layers separately on each face of its substrate, emitting light of similar or different colors.
  • Light-emitting diodes are made from compound semiconductor materials and are made for the purpose of converting electricity into light. Owing to the difference in energy band gap of the semiconductor materials, the light-emitting devices can be made to emit visible light, such as, red, orange, yellow, green, blue and purple color, as well as invisible lights, such as, infrared and ultraviolet.
  • the semiconductor materials suitable for making high brightness light-emitting diodes are AlGaAs, AlGaInP and InGaN.
  • AlGaAs has long been used to make high-brightness red and infrared light-emitting devices.
  • the fabrication technique of these devices involves the use of liquid phase epitaxy (LPE). Double heterostracture (DH) layer structure is employed to achieve high output efficiency.
  • LPE liquid phase epitaxy
  • DH Double heterostracture
  • AIGaInP is the material of choice.
  • MOCVD Metal-Organic Chemical Vapor Deposition
  • the layer structure of the device is based on quantum well (QW) configuration to achieve higher light output.
  • InGaN is the most suitable material to use.
  • MOCVD is the most commonly used growth technique utilized. To achieve high luminous efficacy, multi-quantum well configuration is normally incorporated into these device structures.
  • the conventional method of fabricating light-emitting devices having light of different colors is to assemble together light-emitting device chips emitting different colors into an aggregate. This normally takes more module package space and is also costly from a fabrication cost viewpoint.
  • This invention comprises forming light-emitting device layers on both faces of the substrate, according to the need for light of a specific color.
  • By stacking the sets of light-emitting diode layers in a vertical alignment both the package module space and the fabrication cost can be reduced and the effect of the light-mixing can be significantly enhanced.
  • of the present invention to provide a light- emitting device having a transparent substrate with two sets of light- emitting device layers formed separately on each of its two faces. These two sets of light-emitting device layers can be made to emit light either with the same or different color by varying the composition and structure of each set of device layers. Resulting from mixing the light of the same color, emitted simultaneously by each set of device layers, a light of the same color with enhanced intensity is produced.
  • a light of a third color is produced.
  • These two sets of light-emitting device layers can also be programmed to emit light in sequence, resulting in light of three different colors produced in sequence.
  • the techniques for forming the light-emitting device layers on each face of the transparent substrate involve bonding by ultrasonic fusion, transparent adhesives, such as epoxy, silicone or other related bonding techniques.
  • the transparent substrate can be made of sapphire, glass or other transparent materials.
  • the two sets of light-emitting device layers can be made of quaternary epilayers at the bottom with quaternary epilayers at the top, binary epilayers at the bottom with binary epilayers at the top or quaternary epilayers at the bottom with binary epilayers at the top.
  • the combination of two sets of device epilayers can be adjusted ⁇ edd ' -offfie color. For instance, red device layers at the top with green device layers at the bottom produces white light; blue device layers at the top with yellow device layers at the bottom also produces white light.
  • the technique for electrically connecting the light-emitting device layers on each face of the transparent substrate involve either wire- bonding or flip-chip bonding. It is also possible to form device layers in different forms, such as rectangular, circular, square, etc. A single set of light emitting layers may be formed on each surface of the substrate or an array of sets may be formed on each surface.
  • FIGT Migrates the" Wst embodiment employing the principles of the present invention.
  • FIG 2 illustrates the second embodiment employing the principles of the present invention.
  • FIG 3 illustrates the third embodiment employing the principles of the present invention.
  • FIG 4 illustrates the fourth embodiment employing the principles of the present invention.
  • 1 refers to yellow LED epilayers
  • 2 refers to a joining interface (a set of epilayers join with the transparent substrate)
  • 3 refers to a transparent substrate
  • 4 refers to blue epilayers
  • 5 refers to light of yellow color
  • 6 refers to light of blue color
  • 7 refers to light of white color
  • 8 refers to epilayers of infrared light
  • 9 refers to epilayers of green light
  • 10 refers to light of red color
  • 11 refers to light of green color.
  • the present invention comprises a stacked light-emitting device.
  • the first embodiment employing the principles of the present invention, is illustrated in FIG 1, consisting of two yellow light-emitting device epilayers 1, a joining interface 2, a transparent substrate 3, two blue light- emitting device epilayers emitting blue light 4, yellow light 5, blue light 6, 'Mwmie ⁇ ptV. 1
  • the light emitting device further comprises cathode electrodes 20, 21, anode electrodes 22, 34 and bonding wires 23, 24, which provide electrical connection to electrodes 25, 26.
  • the light-emitting device sits on bumps 27, 28 which are placed on metal electrodes 29, 30, placed on submount 31 for electrical connection purposes.
  • Blue light 6 is emitted from active light emitting layer 32 and yellow light is emitted from active light emitting layer 33.
  • the fabrication technique of the present invention involves first the growth of InGaN-based blue light-emitting device epilayers 4 epitaxially grown on the top surface of a transparent substrate 3 (sapphire). Secondly, AlGalnP-based yellow light-emitting device epilayers 1 are then adhered onto the bottom surface of transparent substrate 3 using a transparent adhesive material (epoxy) as a joining interface 2. Through the mixing of yellow light 5 and blue light 6, white light 7 is thus produced.
  • a transparent adhesive material epoxy
  • the second embodiment employing the principles of the present invention involves the growth of InGaN-based green light-emitting device epilayers 9 grown on the top surface of a transparent substrate 3 (sapphire). Red light-emitting device epilayers 8 are then adhered onto the bottom surface of transparent substrate 3 by a transparent a joining interface 2. Through the mixing of red light 10 and green light 11, white light is also thus produced.
  • the third embodiment employing the principles of the present invention is illustrated in FIG 3.
  • the fabrication technique involves the growth of InGaN-based green light-emitting device epilayers 9 on the top surface of a transparent substrate 3 and the growth of InGaN-based green light- emitting device epilayers 9 on the bottom surface of substrate 3. Through the combining of the green light emitted from these two device epilayers, a two-fold enhanced green light 11 is thus produced, which greatly improves the low light output suffered by conventional green light-emitting devices.
  • the fourth embodiment employing the principles of the present invention is illustrated in FIG 4.
  • the fabrication technique involves the bonding 2 of two yellow light-emitting device epilayers 1 separately onto the top and bottom surfaces of a transparent substrate 3 (sapphire). Through the combining of the yellow light emitted from these two device epilayers, a two-fold enhanced yellow light 5 is thus produced which greatly improves the low light output suffered by conventional yellow light-emitting devices.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

A stacked light-emitting device comprising a transparent substrate (3) and two sets of light-emitting diode layers (4), with either the same or different structure or composition, joined separately to the top and bottom surfaces of the substrate to form a stacked light-emitting device. The top and bottom set of light-emitting diode layers can emit light, either of the same or different colors by adjusting the composition and structure of each set of diode layers. Mixing light with the same color emitted simultaneously by each set of diode layers results in light with the same color and enhanced intensity. Mixing light of two different colors emitted simultaneously by each set of diode layers results in light with third color. The two sets of light-emitting diode layers can also be programmed to emit light in sequence, resulting in light of three different colors produced in sequence.

Description

Figure imgf000002_0001
DEVICE AND FABRICATION
THEREOF
Field of Invention
The present invention relates to a stacked light-emitting device, in particular, to a stacked light-emitting device having two sets of light- emitting diode layers separately on each face of its substrate, emitting light of similar or different colors. Technical Background
Light-emitting diodes are made from compound semiconductor materials and are made for the purpose of converting electricity into light. Owing to the difference in energy band gap of the semiconductor materials, the light-emitting devices can be made to emit visible light, such as, red, orange, yellow, green, blue and purple color, as well as invisible lights, such as, infrared and ultraviolet. The semiconductor materials suitable for making high brightness light-emitting diodes are AlGaAs, AlGaInP and InGaN.
AlGaAs has long been used to make high-brightness red and infrared light-emitting devices. The fabrication technique of these devices involves the use of liquid phase epitaxy (LPE). Double heterostracture (DH) layer structure is employed to achieve high output efficiency. For high-
Figure imgf000003_0001
and yellow green light-emitting devices, AIGaInP is the material of choice. The fabrication technique of these devices involves the use of Metal-Organic Chemical Vapor Deposition (MOCVD) to achieve high quality and high output. The layer structure of the device is based on quantum well (QW) configuration to achieve higher light output.
For high-brightness green, blue, violet and ultraviolet light-emitting devices, InGaN is the most suitable material to use. For mass-production of these devices, MOCVD is the most commonly used growth technique utilized. To achieve high luminous efficacy, multi-quantum well configuration is normally incorporated into these device structures.
The conventional method of fabricating light-emitting devices having light of different colors, is to assemble together light-emitting device chips emitting different colors into an aggregate. This normally takes more module package space and is also costly from a fabrication cost viewpoint. Summary of the Invention
This invention comprises forming light-emitting device layers on both faces of the substrate, according to the need for light of a specific color. By stacking the sets of light-emitting diode layers in a vertical alignment, both the package module space and the fabrication cost can be reduced and the effect of the light-mixing can be significantly enhanced.
Figure imgf000004_0001
of the present invention to provide a light- emitting device having a transparent substrate with two sets of light- emitting device layers formed separately on each of its two faces. These two sets of light-emitting device layers can be made to emit light either with the same or different color by varying the composition and structure of each set of device layers. Resulting from mixing the light of the same color, emitted simultaneously by each set of device layers, a light of the same color with enhanced intensity is produced. Resulting from mixing the light of different colors emitted simultaneously by each set of device layers, a light of a third color is produced. These two sets of light-emitting device layers can also be programmed to emit light in sequence, resulting in light of three different colors produced in sequence.
The techniques for forming the light-emitting device layers on each face of the transparent substrate involve bonding by ultrasonic fusion, transparent adhesives, such as epoxy, silicone or other related bonding techniques. The transparent substrate can be made of sapphire, glass or other transparent materials. The two sets of light-emitting device layers can be made of quaternary epilayers at the bottom with quaternary epilayers at the top, binary epilayers at the bottom with binary epilayers at the top or quaternary epilayers at the bottom with binary epilayers at the top. The combination of two sets of device epilayers can be adjusted
Figure imgf000005_0001
ήedd'-offfie color. For instance, red device layers at the top with green device layers at the bottom produces white light; blue device layers at the top with yellow device layers at the bottom also produces white light.
The technique for electrically connecting the light-emitting device layers on each face of the transparent substrate, involve either wire- bonding or flip-chip bonding. It is also possible to form device layers in different forms, such as rectangular, circular, square, etc. A single set of light emitting layers may be formed on each surface of the substrate or an array of sets may be formed on each surface.
The advantages of the present invention can be realized in terms of fabrication cost, as well as performance. By stacking sets of device layers having similar or different compositions and structures in vertical fashion, the module package space can be reduced and the fabrication process can also be simplified. In addition, the mixing effect of light with either similar or different colors can be enhanced. Brief Description of the Drawings
These and other features and advantages of the present invention will become better understood by reference to the following detailed description, when considered in connection with the accompanying drawings, wherein: FIGT Migrates the" Wst embodiment employing the principles of the present invention.
FIG 2 illustrates the second embodiment employing the principles of the present invention.
FIG 3 illustrates the third embodiment employing the principles of the present invention.
FIG 4 illustrates the fourth embodiment employing the principles of the present invention.
Referring now to FIG 1 though FIG 4, 1 refers to yellow LED epilayers, 2 refers to a joining interface (a set of epilayers join with the transparent substrate), 3 refers to a transparent substrate, 4 refers to blue epilayers, 5 refers to light of yellow color, 6 refers to light of blue color, 7 refers to light of white color, 8 refers to epilayers of infrared light, 9 refers to epilayers of green light, 10 refers to light of red color, 11 refers to light of green color. Description of the Preferred Embodiment
The present invention comprises a stacked light-emitting device. The first embodiment, employing the principles of the present invention, is illustrated in FIG 1, consisting of two yellow light-emitting device epilayers 1, a joining interface 2, a transparent substrate 3, two blue light- emitting device epilayers emitting blue light 4, yellow light 5, blue light 6, 'MwmieΗptV.1
The light emitting device further comprises cathode electrodes 20, 21, anode electrodes 22, 34 and bonding wires 23, 24, which provide electrical connection to electrodes 25, 26. The light-emitting device sits on bumps 27, 28 which are placed on metal electrodes 29, 30, placed on submount 31 for electrical connection purposes. These same items are also present in the embodiments of Figs. 2, 3, and 4, but are only numbered in Fig. 1.
Blue light 6 is emitted from active light emitting layer 32 and yellow light is emitted from active light emitting layer 33.
The fabrication technique of the present invention involves first the growth of InGaN-based blue light-emitting device epilayers 4 epitaxially grown on the top surface of a transparent substrate 3 (sapphire). Secondly, AlGalnP-based yellow light-emitting device epilayers 1 are then adhered onto the bottom surface of transparent substrate 3 using a transparent adhesive material (epoxy) as a joining interface 2. Through the mixing of yellow light 5 and blue light 6, white light 7 is thus produced.
The second embodiment employing the principles of the present invention, illustrated in FIG 2, involves the growth of InGaN-based green light-emitting device epilayers 9 grown on the top surface of a transparent substrate 3 (sapphire). Red light-emitting device epilayers 8 are then adhered onto the bottom surface of transparent substrate 3 by a transparent
Figure imgf000008_0001
a joining interface 2. Through the mixing of red light 10 and green light 11, white light is also thus produced.
The third embodiment employing the principles of the present invention is illustrated in FIG 3. The fabrication technique involves the growth of InGaN-based green light-emitting device epilayers 9 on the top surface of a transparent substrate 3 and the growth of InGaN-based green light- emitting device epilayers 9 on the bottom surface of substrate 3. Through the combining of the green light emitted from these two device epilayers, a two-fold enhanced green light 11 is thus produced, which greatly improves the low light output suffered by conventional green light-emitting devices. The fourth embodiment employing the principles of the present invention is illustrated in FIG 4. The fabrication technique involves the bonding 2 of two yellow light-emitting device epilayers 1 separately onto the top and bottom surfaces of a transparent substrate 3 (sapphire). Through the combining of the yellow light emitted from these two device epilayers, a two-fold enhanced yellow light 5 is thus produced which greatly improves the low light output suffered by conventional yellow light-emitting devices.
Having thus described the invention, we claim:

Claims

1. A stacked light-emitting device comprising: a transparent substrate; a first set of light-emitting diode layers formed epitaxially on the top surface of said substrate; a second set of light-emitting diode layers formed epitaxially on the bottom surface of said substrate.
2. The light emitting device of Claim 1 in which the sets of light-emitting diodes are stacked vertically.
3. The light emitting device of Claim 1 in which the sets of light emitting diode layers are formed by bonding.
4. The light-emitting device of Claim, 3 wherein said bonding is ultrasonic fusion or transparent adhesive bonding.
5. The light-emitting device of Claim 1 wherein both sets of light-emitting diodes emit the same color of light.
6. The light-emitting device of Claim 1 wherein said sets of light-emitting diodes emit different colors of light.
7. The light-emitting device of Claim 1 wherein said first and second set of light-emitting diode layers are quaternary epilayers.
8. The light-emitting device of Claim 1 wherein said first and second set of light-emitting diode layers are binary epilayers.
9. The light-emitting device of Claim 1 wherein said first set of light- emitting diode chips are binary epilayers and said second light-emitting diode chips are quaternary epilayers.
10. The light-emitting device of Claim 1 wherein said first set of light- emitting diode chips emits red or yellow light and said second set of light- emitting diode chips emits blue or green light.
11. The light-emitting device of Claim 1 wherein said transparent substrate is made of a transparent material.
12. The light-emitting device of Claim 1 wherein said transparent substrate is made of sapphire or glass.
13. The light-emitting device of Claim 1 wherein said stacked light- emitting device comprises wire bonding or flip chip bonding.
14. The light-emitting device of Claim 1 wherein said stacked light- emitting device is formed with single set of light-emitting diode layers on each surface of the said substrate.
15. The light-emitting device of Claim 1 wherein said stacked light- emitting device is formed with arrays of sets of light-emitting diode layers on each surface of said substrate.
16. The light-emitting device of Claim 1 wherein the light emitting device layers are programmed to emit light in sequence.
17. A vertically stacked light-emitting device comprising: a transparent substrate having an upper face and a lower face, a set of light-emitting diode layers formed epitaxially on the upper face of said substrate and a set of light-emitting diode layers bonded to the lower face of said substrate.
18. A vertically stacked light-emitting device comprising: a transparent substrate having an upper face and a lower face, a set of light-emitting diode layers bonded on the upper face of said substrate and a set of light-emitting diode layers bonded to the lower face of said substrate.
19. A vertically stacked light-emitting device comprising: a transparent substrate having an upper face and a lower face, an array of light-emitting diode layers bonded on the upper face of said substrate and an array of light-emitting diode layers bonded to the lower face of said substrate.
PCT/US2006/027906 2006-07-18 2006-07-18 A stacked light-emitting device and fabrication thereof WO2008010793A2 (en)

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
DE102016104584A1 (en) * 2016-03-14 2017-09-14 Osram Opto Semiconductors Gmbh A light-emitting device and method of manufacturing a light-emitting device
WO2021172909A1 (en) * 2020-02-26 2021-09-02 서울바이오시스주식회사 Multi-wavelength light emitting element and method for manufacturing same

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US5416494A (en) * 1991-12-24 1995-05-16 Nippondenso Co., Ltd. Electroluminescent display

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US5416494A (en) * 1991-12-24 1995-05-16 Nippondenso Co., Ltd. Electroluminescent display

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016104584A1 (en) * 2016-03-14 2017-09-14 Osram Opto Semiconductors Gmbh A light-emitting device and method of manufacturing a light-emitting device
WO2021172909A1 (en) * 2020-02-26 2021-09-02 서울바이오시스주식회사 Multi-wavelength light emitting element and method for manufacturing same
US11862616B2 (en) 2020-02-26 2024-01-02 Seoul Viosys Co., Ltd. Multi wavelength light emitting device and method of fabricating the same

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