Classifications

• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
  • H05H1/00—Generating plasma; Handling plasma
  • H05H1/24—Generating plasma
  • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
  • H05H1/2437—Multilayer systems
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
  • H05H1/00—Generating plasma; Handling plasma
  • H05H1/24—Generating plasma
  • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32018—Glow discharge
  • H01J37/32036—AC powered
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32073—Corona discharge
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/3244—Gas supply means
  • H01J37/32449—Gas control, e.g. control of the gas flow
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32458—Vessel
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32532—Electrodes
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
  • H05H1/00—Generating plasma; Handling plasma
  • H05H1/24—Generating plasma
  • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
  • H05H1/2418—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the electrodes being embedded in the dielectric
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
  • H05H1/00—Generating plasma; Handling plasma
  • H05H1/24—Generating plasma
  • H05H1/4697—Generating plasma using glow discharges

Definitions

• the present invention relates, in general, to an induction concentration remote(ICR) atmospheric pressure plasma generating apparatus, and more particularly, to an induction concentration remote atmospheric pressure plasma generating apparatus in which high voltage is applied to hot electrodes and in particular induction electrodes are used, so that a plasma can be generated in a plasma cell including several metal discharge electrodes by using one power supply device while not generating arc between metal electrodes, and large area samples can be processed efficiently by generating a high-density plasma.
• ICR induction concentration remote
• a low-pressure plasma can be easily generated, but requires expensive apparatuses for maintaining a low-pressure state, such as a vacuum chamber and an exhaust device. Further, the low-pressure plasma has a limit to mass-production processing due to the product input method of a batch type. In contrast, the atmospheric pressure plasma can be generated in the state of an atmospheric pressure (760 Torr), and thus does not require an expensive vacuum system. Further, the atmospheric pressure plasma is advantageous in that it enables a consecutive process and mass production.
• a general AC barrier type is a method in which a ceramic dielectric material for prohibiting arc discharge, such as alumina, is coated on both sides or one side of upper and lower electrodes disposed with an adequate gap therebetween, and high AC pulse voltage is applied to generate an atmospheric pressure plasma.
• an object of the present invention is to provide an induction concentration remote atmospheric pressure plasma generating apparatus in which a high-density plasma can be locally generated in an important region while not generating arc in a multi-cell including induction electrodes and discharge electrodes, large area processing efficiency can be increased by irradiating the high- density plasma to a sample, so that generation of a plasma can be minimized in an unnecessary space to increase energy efficiency, and difficulty in cooling due to the existing water cooling can be solved since generation of heat is low.
• an induction concentration remote atmospheric pressure plasma generating apparatus comprising, a hot electrode having one or more holes; induction electrodes disposed within the hot electrode holes, wherein the hot electrode holes and the induction electrodes are spaced apart from each other at predetermined intervals; a dielectric material surrounding the hot electrode and the induction electrodes, wherein the induction electrodes are projected downwardly from the dielectric material; a spring disposed below the induction electrodes; a discharge electrode disposed below the spring, wherein a lower side of the induction electrode, the spring and the discharge electrodes are located within a discharge electrode holding hole of a ceramic dielectric material having a narrow discharge hole; a ground electrode having a small hole and disposed below the narrow discharge hole of the ceramic dielectric material, the ground electrode being grounded; and a chamber for accommodating the above constituent elements and having a working gas supply unit for supplying a working gas.
• an induction concentration remote atmospheric pressure plasma generating apparatus including; wherein a sample is disposed under the ground electrode.
• an induction concentration remote atmospheric pressure plasma generating apparatus including; wherein high AC voltage is applied to the hot electrode and the ground electrode in order to generate a plasma.
• a plasma can be generated in a plasma cell including several metal discharge electrodes by using one power supply device while not generating arc between metal electrodes, a specific heat corner or glow discharge plasma in the generated plasma can be easily controlled through control of the size of the antenna size, and samples of a large area 3D structure can be efficiently processed.
• the substrates of semiconductor or display panels which are electrically invulnerable, can be processed without damage by generating a remote high-density plasma.
• a structure in which a high-density plasma can be generated outwardly without being restricted to space can be implemented. It is therefore possible to uniformly process samples with no regard to the size of the samples.
• any kinds of materials such as insulators, conductors and semiconductors, can be cleaned and surface reformed easily and stably regardless of the types of samples as well as complicated 3D samples.
• FIG. 1 is a view illustrating an induction concentration remote atmospheric pressure plasma generating apparatus according to an embodiment of the present invention. Mode for the Invention
• a hot electrode 1 has one or more holes.
• An induction electrode 2 is disposed within the hot electrode hole.
• the hot electrode hole and the induction electrode 2 are spaced apart from each other at a predetermined interval.
• the hot electrode 1 and the induction electrode 2 are surrounded by a dielectric material 3.
• the induction electrode 2 is projected downwardly from the dielectric material 3.
• a discharge electrode 4 is disposed below the induction electrode 2.
• a discharge electrode 5 is disposed below the spring 4.
• the lower side of the induction electrode 2, the spring 4 and the discharge electrodes 5 are located within a discharge electrode holding hole 6b of a ceramic dielectric material 6 having a narrow discharge hole 6a.
• a ground electrode 7 having a small hole is disposed below the narrow discharge hole 6a of the ceramic dielectric material 6.
• the ground electrode 7 is grounded.
• a chamber 8 accommodates the constituent elements, and has a working gas supply unit for supplying a working gas. The working gas is spouted from the ground electrode 7 having the small hole through the discharge electrode holding hole 6b to the narrow discharge hole 6a.
• a sample 10 is disposed under the ground electrode 7.
• a plasma is generated as follows.
• a high-density plasma is generated between the discharge electrode 5 and the ground electrode 7 in the narrow discharge hole 6a of the ceramic dielectric material 6 by means of an inter-metal discharge.
• the generated high-density plasma is spouted downwardly by means of the velocity of the working gas of high voltage.
• the generated plasma is a remote plasma, and can be processed without damage to the substrates of semiconductors or display panels.
• the present invention can generate a high-density plasma through such inter-metal discharge, which cannot be obtained due to the breakage of a dielectric material, etc. in the existing DBD method.
• FIG. 1 If high AC voltage is applied to the hot electrodes 1 and the ground electrode 7, the induction electrode 2 is electrified by means of the dielectric material 3 existing between the hot electrode 1 and the induction electrode 2, and thus becomes a high potential state. The high potential of the induction electrode 2 causes the discharge electrode 5 to have a high potential through the spring 4.
• a high-density plasma is generated in the narrow discharge hole 6a of the ceramic dielectric material 6 due to a high potential difference between the discharge electrode
• the generated high-density plasma is spouted to the surface of the sample by means of the velocity of the working gas of high voltage.
• the dielectric material 3 serves as a capacitor and the ceramic dielectric material 6 serves as a resistor in a plasma discharge within the narrow discharge hole 6a, producing RC resonance and thus minimizing energy loss.
• the current of the generated plasma is controlled by means of the dielectric material 3, so that the plasma is not transferred as heat arc.
• the intensity of the generated plasma is proportional to the thickness of the hot electrode, and is in inverse proportion to the distance between the induction electrode 2 and the hot electrode 1.
• ICRP Remote Plasma
• the discharge electrode 5 and the ground electrode 7 are not broken even in a strong plasma since they are made of metal. It is therefore possible to provide the source of a strong plasma.
• the present invention is an invention capable of solving the problems.
• the present invention is advantageous in that a high- density plasma can be generated between several metal electrodes, and corona, normal glow, abnormal glow and non-thermal arc plasma states in the generated plasma can be easily controlled through the control of input power.
• the working gas can include all kinds of gases.
• the induction electrodes, the discharge electrodes and the ground electrode are used. Accordingly, a high-density plasma can be generated at local regions due to a discharge between he metal electrodes, and a plasma is not generated in unnecessary regions. It is therefore possible to efficiently process samples of a large area.
• the substrates of semiconductor or display panels which are electrically invulnerable, can be processed without damage by generating a remote high-density plasma.
• a structure in which a high-density plasma can be generated outwardly without being restricted to space can be implemented. It is therefore possible to uniformly process samples with no regard to the size of the samples.
• any kinds of materials such as insulators, conductors and semiconductors, can be cleaned and surface reformed easily and stably regardless of the types of samples as well as complicated 3D samples.

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Cited By (5)

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• 2006
  • 2006-06-20 KR KR1020060055171A patent/KR100761962B1/ko active IP Right Grant
• 2007
  • 2007-02-26 WO PCT/KR2007/000967 patent/WO2007148868A1/en active Application Filing

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