WO2007136183A1 - Procédé de réparation de masque polymère - Google Patents

Procédé de réparation de masque polymère Download PDF

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Publication number
WO2007136183A1
WO2007136183A1 PCT/KR2007/002333 KR2007002333W WO2007136183A1 WO 2007136183 A1 WO2007136183 A1 WO 2007136183A1 KR 2007002333 W KR2007002333 W KR 2007002333W WO 2007136183 A1 WO2007136183 A1 WO 2007136183A1
Authority
WO
WIPO (PCT)
Prior art keywords
laser
transparent
laser irradiation
ink
defect
Prior art date
Application number
PCT/KR2007/002333
Other languages
English (en)
Inventor
Oug-Ki Lee
Jong-Kook Park
Original Assignee
Phicom Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020070029396A external-priority patent/KR100866499B1/ko
Application filed by Phicom Corporation filed Critical Phicom Corporation
Priority to CN2007800107948A priority Critical patent/CN101410947B/zh
Priority to JP2009510884A priority patent/JP2009537859A/ja
Priority to US12/282,662 priority patent/US20090095922A1/en
Publication of WO2007136183A1 publication Critical patent/WO2007136183A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects

Definitions

  • Exemplary embodiments of the present invention relate to a method of repairing a polymer mask. More particularly, exemplary embodiments of the present invention relate to a method of repairing fabrication defects to a polymer mask such as spots and voids using a laser.
  • a polymer mask is a type of photolithography mask used for a contact exposure or a near-field imaging.
  • the polymer mask may include non-transparent patterns on a transparent and flexible polymer substrate.
  • the polymer mask may be fabricated by forming a non-transparent layer on an entire area of a flexible substrate, and then patterning the non-transparent layer by a conventional photolithography process.
  • the polymer mask may be a quick and economical solution for a large- area lithography having moderate resolution.
  • the polymer mask is a good solution for achieving a high-density printed circuit board (PCB), which requires quick and economical means to expose a large area.
  • PCB printed circuit board
  • a conventional example of the polymer mask may include a patterned UV curing ink on a polyethylene terephthalate (PET) substrate.
  • PET polyethylene terephthalate
  • the UV curing ink is spray-coated on a large PET substrate, and then the substrate is exposed to a UV light by a photolithography process to selectively cure the ink, thereby forming patterns.
  • the PTE mask Due to a developing process followed by the lithography exposure of the large area, the PTE mask is hard to be fabricated without generating defects.
  • Defects may usually include voids on ink-patterned area resulted from an improper exposure, and ink spots on a transparent area resulted from an improper developing. Sizes of these defects may be in a range of a few micrometers to a few millimeters.
  • the defects may be repaired before using the polymer mask for performing the lithography. However, repairing these defects is difficult and time-consuming. Especially, a manual touch-up for repairing the voids in micron-scale may be challenging. Removing the spot defect by using mechanical methods such as a polishing and a grinding may not be practical solutions either. Further, a selective ink removal by a laser ablation may be difficult due to a small difference in absorption between the polymer-based ink and the polymer substrate. What is needed therefore is an effective method of repairing the defects to the polymer mask.
  • Exemplary embodiments of the present invention provide a method of readily repairing defects to a polymer mask.
  • a transparent polymer substrate having first and second surfaces, and a patterned layer on the first surface of the polymer substrate is provided. Defects to the patterned layer and the first surface of the polymer substrate are then detected.
  • the defects include a spot defect and a void defect.
  • a laser irradiation removes the spot defect.
  • the void defect is then touched up.
  • a transparent polymer substrate having first and second surfaces, and a non-transparent patterned layer on the first surface of the polymer substrate are provided.
  • Defects to the patterned layer and the first surface of the polymer substrate are then detected.
  • the defects include a spot defect and a void defect.
  • the spot defect is removed by a laser irradiation.
  • the laser irradiation maintains transparency of the polymer substrate.
  • the void defect is then restored by a laser-assisted touch-up.
  • a transparent polymer substrate having first and second surfaces and a non- transparent patterned layer on the first surface of the polymer substrate are provided.
  • a spot defect to the first surface of the polymer substrate is then detected.
  • the spot defect is removed by a laser irradiation.
  • the laser irradiation is sufficiently provided to induce an effective ablation for substantially maintaining transparency of the first surface of the polymer substrate.
  • the laser irradiation for the effective ablation may be performed using a pulsed laser having an irradiance in a range of about 10 6 W/cm 2 to 10 15 W/cm 2 .
  • the laser irradiation may be performed using a pulsed UV laser having a wavelength in a range of about 150 nm to about 400 nm. Further, the laser irradiation may be performed using a near-field imaging that uses a mask for forming a beam spot shape incident on the spot defect. Furthermore, the laser irradiation may be performed using a far-field imaging that has a beam profile having a TEM 0O mode in the Gaussian distribution.
  • the laser irradiation may form a crater having a depth of about 0.1 ⁇ m to 50 ⁇ m.
  • the crater may have a concave shape crater.
  • the crater may be covered by a polymer emulsion having a refractive index substantially similar to that of the polymer substrate.
  • a transparent polymer substrate having first and second surfaces and a non-transparent patterned layer on the first surface of the polymer substrate are provided.
  • a void defect to the patterned layer is then detected.
  • a laser is irradiated to the void defect to form a blind hole.
  • the blind hole is then filled with a non-transparent filler-ink.
  • the method may further include removing an excessive amount of the filler-ink around the blind hole to fill the blind hole with the ink.
  • the laser irradiation may be performed using a pulsed laser having an irradiance in a range of about 10 6 W/cm 2 to 10 15 W/cm 2 .
  • the laser irradiation may be performed using a pulsed UV laser having a wavelength in a range of about 150 nm to about 400 nm.
  • the laser irradiation may be performed using a near-field imaging that uses a mask for forming a beam spot shape incident on the spot defect.
  • the laser irradiation may be performed using a far-field imaging that has a beam profile having a TEM 0O mode in the Gaussian distribution.
  • the blind hole may have a depth in a range of about 1 ⁇ m to 50 ⁇ m.
  • filling the blind hole with the filler-ink may be performed using an injection nozzle.
  • the injection nozzle may include an inkjet nozzle cartridge for delivering droplets of the filler-ink to the blind hole, and a needle-type dot marker for delivering dots of the filler-ink through a needle tube adjacent to the blind hole.
  • a transparent polymer substrate having first and second surfaces, and a non-transparent patterned layer on the first surface of the polymer substrate are provided.
  • a void defect on the patterned layer is then detected.
  • a first laser is irradiated to the void defect to expose the first surface of the polymer substrate.
  • a second laser is then irradiated to the exposed first surface to form a diffractive structure for trapping an incident light.
  • the first laser irradiation may be performed using a pulsed laser with an irradiance in a range of about 10 6 W/cm 2 to 10 15 W/cm 2 .
  • the first laser irradiation and the second laser irradiations may be performed using a pulsed UV laser having a wavelength in a range of about 150 nm to about 400 nm.
  • the first laser irradiation may be performed using an ArF excimer laser at 193 nm with a laser energy density in a range of about 0.1 J/cm 2 to about 100 J/cm 2 .
  • the second laser irradiation may be performed using an ArF excimer laser at 193 nm with a laser energy density in a range of about 0.01 J/cm 2 to about 0.5 J/cm 2 .
  • the first laser irradiation and the second laser irradiation may be performed using a near-field imaging that uses a mask for forming a beam spot shape incident on the spot defect.
  • the first laser irradiation and the second laser irradiation may be performed using a far- field imaging that has a beam profile with a TEMoo mode in the Gaussian distribution.
  • the diffractive structure may have a plurality of micro-scaled cones.
  • a transparent polymer substrate having first and second surfaces, and a non-transparent patterned layer on the first surface of the polymer substrate are provided.
  • a void defect on the patterned layer is then detected.
  • a transparent photosensitive layer including at least one kind of photosensitive particles is formed over the void defect.
  • a laser is irradiated to the photosensitive layer to photochemically change a color of the photosensitive layer.
  • the photosensitive layer may include a mixture of titanium dioxide particles in a polymer emulsion. Further, the titanium dioxide particles may have an average size of about 1 nanometer to 1,000 nanometers.
  • the laser irradiation may be performed using a pulsed laser with an irradiance in a range of about 10 6 W/cm 2 to 10 15 W/cm 2 .
  • the laser irradiation may be performed using a pulsed UV laser with a wavelength in a range of about 150 nm to about 400 nm.
  • the laser irradiation may be performed using a near-field imaging that uses a mask for forming a beam spot shape incident on the photosensitive layer.
  • the laser irradiation may be performed using a far-field imaging that has a beam profile with a TEMoo mode in the Gaussian distribution.
  • a transparent polymer substrate having first and second surfaces, and a non-transparent patterned layer on the first surface of the polymer substrate are provided.
  • a void defect to the patterned layer is then detected.
  • a transparent photo-reactive layer including at least one kind of photo-reactive particles is formed over the void defect.
  • a laser is then irradiated to the photo-reactive layer to react the photo-reactive particles with the laser, thereby creating carbonization debris.
  • the photo-reactive layer may include a mixture of polyimide particles in a polymer emulsion.
  • the laser irradiation may be performed using a pulsed laser having an irradiance in a range of about 10 6 W/cm 2 to 10 15 W/cm 2 .
  • the laser irradiation may be performed using a pulsed UV laser with a wavelength in a range of about 150 nm to about 400 nm.
  • the laser irradiation may be performed using a near-field imaging that uses a mask for forming a beam spot shape incident on the photo-reactive layer.
  • the laser irradiation may be performed using a far-field imaging that has a beam profile with a TEM 0O mode in the Gaussian distribution.
  • a transparent polymer substrate having first and second surfaces, and a non-transparent patterned layer on the first surface of the polymer substrate are provided.
  • a void defect on the patterned layer is then detected.
  • a non-transparent ink for preventing transmission of UV light is applied to the void defect.
  • a laser is irradiated to the non-transparent ink to trim an overflow of the non-transparent ink beyond the patterned area on the first surface of the polymer substrate.
  • applying the non-transparent ink may be performed using an injection nozzle.
  • the nozzle may include an inkjet nozzle cartridge for delivering droplets of the non-transparent ink to the void defect, and a needle-type dot marker for delivering dots of the non-transparent ink through a needle tube upon a contact on the void defect.
  • the non-transparent ink may include a mixture of at least one colorant in a polymer emulsion. Further, the non- transparent ink may include a UV curing ink that is cured by an exposure to UV light including a UV lamp and a pulsed UV laser before the laser irradiation.
  • the laser irradiation may be performed using a pulsed laser with an irradiance in a range of about 10 6 W/cm 2 to 10 15 W/cm 2 .
  • the laser irradiation may be performed using a pulsed UV laser having a wavelength in a range of about 150 nm to about 400 nm.
  • the laser irradiation may be performed using a near-field imaging that uses a mask for forming a beam spot shape incident on the overflowed non-transparent ink.
  • the laser irradiation may be performed using a far-field imaging that has a beam profile with a TEM 0O mode in the Gaussian distribution.
  • a transparent polymer substrate having first and second surfaces, and a non-transparent patterned layer on the first surface of the polymer substrate are provided.
  • a void defect to the patterned layer is then detected.
  • a UV curing ink is applied to the void defect.
  • a UV laser is partially irradiated to the UV curing ink to convert a region of the UV curing ink irradiated by the UV laser into an insoluble state.
  • a region of the UV curing ink non-irradiated by the UV laser is then removed.
  • applying the non-transparent ink may be performed using an injection nozzle.
  • the nozzle may include an inkjet nozzle cartridge for delivering droplets of the non-transparent ink to the void defect, and a needle-type dot marker for delivering dots of the non-transparent ink through a needle tube upon a contact on the void defect.
  • the UV laser irradiation may be performed using a pulsed laser with a wavelength in a range of about 150 nm to about 400 nm.
  • the UV laser irradiation may be performed using a near-field imaging that uses a mask for forming a beam spot shape incident on the UV curing ink.
  • the UV laser irradiation may be performed using a far-field imaging that has a beam profile with a TEM 0O mode in the Gaussian distribution.
  • the UV laser irradiation may be performed using a pulsed UV laser with a laser energy density in a range of about 0.001 J/cm 2 to about 0.05 J/cm 2 .
  • a transparent polymer substrate having first and second surfaces, and a non-transparent patterned layer on the first surface of the polymer substrate are provided.
  • a transparent overlay having first and second surfaces, and an ink layer formed on the second surface of the transparent overlay to form an interface between the transparent overlay and the ink layer are then provided.
  • a void defect on the patterned layer is detected.
  • the transparent overlay is overlapped with the patterned layer of the polymer substrate to contact the ink layer to the void defect.
  • a localized laser which is substantially transmitted through the transparent overlay and substantially absorbed in the interface, is irradiated to the first surface of the transparent overlay to separate the ink layer from the second surface of the transparent overlay.
  • the ink layer is then transcribed from the transparent overlay to the void defect.
  • the ink layer may include a mixture of at least one colorant in a polymer emulsion. Further, the ink layer may include a colored photoresist.
  • the laser irradiation may be performed using a pulsed UV laser with a wavelength in a range of about 150 nm to about 400 nm.
  • the laser irradiation may be performed using a near- field imaging that uses a mask for forming a beam spot shape incident on the interface.
  • the laser irradiation may be performed using a far-field imaging that has a beam profile with a TEMoo mode in the Gaussian distribution.
  • the laser irradiation may be performed using a pulsed UV laser with a laser energy density in a range of about 0.001 J/cm 2 to about 0.05 J/cm 2 .
  • the defects such as the spot defect, the void defect, etc., in the transparent polymer mask may be readily removed. Further, the methods of the present invention may easily repair the micro-sizes of voids. Therefore, the defects to the polymer mask for the photolithography process may be readily and effectively repaired.
  • FIG. 1 A is a plan view illustrating types of defects on a polymer mask.
  • FIG. 1 B is a cross-sectional view illustrating types of defects on the polymer mask in FIG. 1A;
  • FIGS. 2A to 2F are cross-sectional views and pictures illustrating a method of repairing a spot defect in accordance with a first exemplary embodiment of the present invention
  • FIGS. 3A to 3E are cross-sectional views and a picture illustrating a method of repairing a void defect using an ink injection induced by a laser irradiation in accordance with a second exemplary embodiment of the present invention
  • FIGS. 4A to 4E are cross-sectional views and a picture illustrating a method of repairing a void defect using a diffractive structure induced by a laser irradiation in accordance with a third exemplary embodiment of the present invention
  • FIGS. 5A to 5C are cross-sectional views illustrating a method of repairing a void defect using a photo-printing in accordance with a fourth exemplary embodiment of the present invention
  • FIGS. 6A to 6C are cross-sectional views illustrating a method of repairing a void defect using laser-induced carbonization in accordance with a fifth exemplary embodiment of the present invention
  • FIGS. 7A to 7D are cross-sectional views illustrating a method of repairing a void defect using a localized ink application induced by a laser trim in accordance with a sixth exemplary embodiment of the present invention
  • FIGS. 8A to 8D are cross-sectional views illustrating a method of repairing a void defect using a localized exposure of a UV curing ink induced by a laser irradiation in accordance with a seventh exemplary embodiment of the present invention
  • FIGS. 9A to 9D are cross-sectional views illustrating a method of repairing a void defect using a laser-induced ink transcription in accordance with an eighth exemplary embodiment of the present invention.
  • first, second, third etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
  • spatially relative terms such as “lower,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the example term “below” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
  • Exemplary embodiments of the present invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the present invention. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, exemplary embodiments of the present invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. The regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present invention.
  • a polymer mask for a photolithography exposure consists of an ink pattern on a transparent polymer substrate, distinctively dividing the mask into a patterned area and a transparent area (or alternatively a non-transparent and a transparent area).
  • the patterned area blocks incident light and the rest of the transparent area transmit the light.
  • FIG. 1A is a plan view illustrating types of defects to a polymer mask, and
  • FIG. 1B is a cross-sectional view illustrating types of defects to the polymer mask in FIG. 1A.
  • FIG. 1A there are two distinctive types of defects in a polymer mask 10.
  • One is formation of an ink spot 16 in a transparent polymer substrate 14, and the other is formation of an ink void 18 in a patterned area 12.
  • a size of the defects, the ink spot 16 and the ink void 18, may range from a few micrometers to a few millimeters.
  • the undesired ink spot 16 in the transparent polymer substrate 14 may cause a short circuit, and the undesired ink void 18 in the patterned area 12 may result in an open circuit.
  • FIG. 1 B illustrates a cross-sectional view of the polymer mask 10 showing the ink spot 16 and the ink void 18.
  • FIGS. 2A to 2F are cross-sectional views and pictures illustrating a method of repairing a spot defect in accordance with a first exemplary embodiment of the present invention.
  • the ink spot 16 is exposed to a laser irradiation 20.
  • the laser irradiation may preferably use a pulsed UV laser.
  • the pulsed UV laser may include F 2 excimer laser at 157 nm, ArF excimer laser at 193 nm, KrCI excimer laser at 222 nm, KrF excimer laser at 248 nm, XeCI excimer laser at 308 nm, XeF excimer laser at 351 nm, and Nd:YAG (or Nd:YVO4) lasers at 355 nm (frequency-tripled) or 266 nm (frequency-quadrupled), etc.
  • Pulse duration of the above-mentioned laser may preferably be in range of femtoseconds to nanoseconds.
  • Laser irradiation 20 may be a near-field imaging that uses a mask for forming a beam spot shape incident on the targeted ink spot 16.
  • a far-field imaging may also be used for the irradiation 20.
  • a beam profile of the irradiation 20 may be uniform enough, such as a TEM 0O in Gaussian distribution.
  • Ablation of a polymer by a laser beam depends on absorption properties of the polymer and characteristics of the laser beam.
  • the absorption property of a polymer may be denoted by the absorption coefficient (cm 1 ), and determined by a depth of absorbed photons in the polymer material. The absorbed photons are reacted with atoms and molecules of the polymer to thereby lead the polymer material to excited states for instantaneous vaporization.
  • a polymer with strong absorption property may have a higher absorption coefficient.
  • I EI ⁇ A -t)
  • E pulse energy of laser
  • A an area of the laser beam
  • t pulse duration (sec).
  • D EI A
  • D laser energy density (J/cm 2 ).
  • an efficient ablation benefits from smaller laser wavelength and shorter pulse duration for both optical and thermal reasons. That is, when properties of a properly selected laser such as short pulse duration and high photonic energy are coupled with properties of a polymer material such as small absorption depth and low thermal conductivity, the excessive heat transfer is minimized by the efficient ablation resulting in cleaner material removal from a small heat-affected zone.
  • a polymethyl methacrylate has a low absorption coefficient values around a few hundreds cm '1 at 248 nm laser beam, which makes a long penetration depth.
  • the absorption of the PMMA of about 248 nm laser irradiation is poor, thereby making the PMMA hard to have efficient ablation.
  • a polyimide (Pl) has a much higher absorption coefficient values over 10 5 cm ⁇ 1 at 248 nm laser beam.
  • the penetration depth at the wavelength is relatively short, making the Pl a good absorber to the incident laser beam. With an optimum laser energy density, a clean and efficient ablation is possible for the Pl at 248 nm wavelength.
  • the PET is used for a transparent substrate 14, which is irradiated by a circular spot in 100 ⁇ m diameter from an excimer laser at 248 nm having pulse duration about 25 ns and laser energy density at 2 J/cm 2 .
  • the PET has a relatively high absorption coefficient of 1.6x10 5 cm “1 at 248 nm wavelength, the ablation is not highly efficient, showing recast of molten materials 23 around an irradiated area 21a.
  • a thin layer of carbonized materials is also formed on the bottom of the irradiated area 21a. When the laser energy density is decreased towards the ablation threshold, the increased carbonization is found at the irradiated area 21a.
  • a repaired site 22a on the transparent polymer substrate 14 needs to maintain good optical transmission for a photolithography exposure 25.
  • the efficient ablation is needed to achieve minimized carbonization with a small heat-affected zone.
  • the repaired site 22a may be formed to have a concave shape.
  • a depth of the concave shape crater is preferably to be shallow, particularly less than 50 ⁇ m.
  • the smooth edge 24a minimizes a formation of an edge shadow on a target 27 directly underneath the edge 24a of the repaired site 22a.
  • the transparent layer 28 may be a polymer emulsion preferably having a matching index of refraction.
  • the polymer emulsion may include a suspension of polymer particles in a liquid. When the liquid evaporates, the suspended polymer particles gather together and combine to form larger chains, thereby forming the transparent layer 28.
  • the transparent layer 28 may also be formed on the concave shaped repaired site 22a to enhance the light transmission in the photolithography process 25.
  • FIGS. 3A to 3E are cross-sectional views and a picture illustrating a method of repairing a void defect using an ink injection induced by a laser irradiation in accordance with a second exemplary embodiment of the present invention.
  • the laser irradiation 20 is carried out for the efficient ablation on the ink void 18.
  • the irradiation 20 forms a blind hole 30 in FIG. 3B.
  • the blind hole 30 has a depth preferably larger than 1 ⁇ m but less than a thickness of the polymer substrate 14.
  • the shape of the blind hole 30 may be in various forms, such as circular, oval, square, rectangular and triangular.
  • FIG. 3C shows the application of a filler-ink 32 over the blind hole 30.
  • Viscosity of the filler-ink 32 may be considered to properly wet and fill the blind hole 30.
  • the filler-ink 32 in high viscosity may not wet the small blind hole and fill inside for the repair.
  • the filler-ink 32 may be any type of inks, which may block incident UV light upon a photo lithography exposure, including but not limited to pigment or dye-based colorants in solvent or water-based solutions. Further, the filler-ink 32 may be applied by a manual method or a small injection nozzle.
  • the inkjet nozzle cartridge may have one or more nozzles, which inject droplets of the filler-ink 32 (see, for example, a manipulation of a commercially available inkjet cartridge in M. Gilliland, "InkJet Applications,” Woodglen Press (2005)).
  • the needle-type dot marker may deliver a dot of the filler-ink 32 through a small needle tube upon contact on the mask surface.
  • a commercially available needle-type dot marker is the DIMARK ® from Hugle Electronics Inc. Toyko, Japan. Referring to FIG. 3D, the excessive filler-ink 32 around the blind hole 30 may be wiped off, leaving a layer of a residual ink 34 at the bottom of the blind hole 30.
  • the PET substrate is used for a transparent substrate 14.
  • the laser is irradiated to the PET substrate to form the blind hole 30.
  • the irradiation 20 is performed by a circular spot iniOO ⁇ m diameter from an excimer laser at 193 nm with pulse duration about 25 ns and laser energy density at 2 J/cm 2 .
  • the blind hole 30 is filled with the filler-ink 32.
  • a portion of the filler-ink 32 around the blind hole 30 leaves the residual ink 34 in the blind hole 30. That is, to repair the void defect, a structure having the ink 34 is formed by filling and removing the filler-ink 32 only in the blind hole 30 as well as by the laser irradiation 20.
  • the laser irradiation for repairing the void defect 18 when the laser irradiation for repairing the void defect 18 is performed using a pulsed laser with an irradiance below about 10 6 W/cm 2 , the repair of the void defect 18 may not be readily carried out.
  • the laser irradiation for the efficient ablation when the laser irradiation for the efficient ablation is performed using a pulsed laser with an irradiance above about 10 15 W/cm 2 , the repair of the void defect 18 may cause damages to the substrate 14. Therefore, the laser irradiation for the efficient ablation may be performed using a pulsed laser with an irradiance of about 10 6 W/cm 2 to about 10 15 W/cm 2 .
  • FIGS. 4A to 4E are cross-sectional views and a picture illustrating a method of repairing a void defect using a diffractive structure induced by a laser irradiation in accordance with a third exemplary embodiment of the present invention.
  • the processes in the FIGS. 4A to 4E represent the method of repairing the void defect using a micro-scaled texture, i.e., the diffractive structure by the laser irradiation.
  • the texture properly formed by a laser ablation, may act as a diffraction grating, which traps incident light during the photolithography exposure.
  • a degree of the light trapping and a spectrum range of the trapped light depend on a geometric factor of the diffractive structure (see the modeling of the geometric factors in M. Niggemann et. a/., "Trapping Light in Organic Plastic Solar Cells with Integrated Diffraction Gratings," 17th European Photovoltaic Solar Energy Conference Proceedings pp. 284-287 (2002)).
  • a conical texturing, which forms micro-scaled mountains of cones, is generally known to trap incident light effectively.
  • the ink void 18 is under the laser irradiation 20.
  • the laser irradiation 20 exposes the polymer surface 40 by the efficient ablation etching the patterned area 12 until the polymer surface 40 is exposed.
  • the laser-exposed polymer surface 40 is exposed again by a controlled laser irradiation 20a.
  • the controlled laser irradiation 20a may be different from the above-mentioned laser irradiation 20.
  • the controlled irradiation 20a forms a micro-texture 42, which acts as a diffraction grating that traps incident light upon the lithography exposure.
  • the controlled irradiation 20a means a laser irradiation with controlled laser parameters, including but not limited to a laser energy density, a number of pulses, a wavelength and a pulse duration.
  • controlled laser parameters including but not limited to a laser energy density, a number of pulses, a wavelength and a pulse duration.
  • the laser energy density at the substrate is the controlling factor to form different surface textures. That is, the initial irradiation 20 (about 20 pulses) may be performed over 1 J/cm 2 to effectively remove the ink from the patterned area 12 to expose the PET surface.
  • the exposed polymer surface 40 may be irradiated again with the controlled laser energy density between 0.01 J/cm 2 and about 0.5 J/cm 2 to thereby form the conical texture.
  • the number of pulse required to form the conical texture depends on the laser energy density. For instance, at least about 20 pulses are required to form the texture At 0.05 J/cm 2 (see morphology of the textures in B. Hopp et. al., "Formation of the surface structure of polyethylene-terephthalate (PET) due to ArF excimer laser ablation.” Applied Surface Science 96-8, pp.611-616 (1996)).
  • three blind holes are exposed to the controlled irradiation 20a (20 pulses at 193 nm) with three different laser energy densities of 0.05 J/cm 2 , 0.1 J/cm 2 and 1 J/cm 2 creating different micro-textures 42a, 42b and 42c, respectively.
  • the micro-texture 42a at 0.05 J/cm 2 and 0.1 J/cm 2 forms the darkest blind hole showing a formation of the effective diffraction grating to trap incident light.
  • the micro-texture 42c at 1 J/cm 2 forms almost a transparent blind hole. This shows that the laser energy density of 1 J/cm 2 resulting in the micro-texture 42c does not form the effective diffraction grating.
  • FIGS. 5A to 5C are cross-sectional views illustrating a method of repairing a void defect using a photo-printing in accordance with a fourth exemplary embodiment of the present invention.
  • a transparent photosensitive layer 50 is locally formed on the ink void 18.
  • the photosensitive layer 50 may contain one kind or multiple kinds of photosensitive particles in the coating solution.
  • the photosensitive particles such as titanium oxide, kaolin and mica, change their colors by photochemical reaction when they are exposed to light having a certain wavelength (see U.S. Patent No. 6,924,077 for more details).
  • heat sensitive particles such as a silver nano-powder may be used where colors of the heat sensitive particles are changed by laser-induced heat from the laser irradiation 20.
  • the photosensitive layer 50 may be a mixture of titanium dioxide (Ti ⁇ 2 ) particle in a polymer emulsion.
  • the particle size of the titanium dioxide is preferably small, particularly a nano-powder, which has an average particulate size of a few nanometers to hundreds of nanometers.
  • the nano-sized particles in the emulsion transmit incident light, during a photolithography exposure, better than large particles.
  • the emulsion preferably has a matching refractive index to the transparent polymer substrate 14.
  • a volume percentage of the nano-titanium dioxide in the emulsion may vary from 1% to 50%, and a thickness of the mixed emulsion applied over the polymer mask 10 may range between 1 ⁇ m and 500 ⁇ m.
  • the volume percent of the titanium dioxide may depend on a thickness of the applied emulsion. Generally, a thicker emulsion layer may require less volume percentage of the titanium dioxide. It is well known to those skilled in the art that the titanium dioxide photochemically changes color from colorless to black, when it is exposed to a pulsed UV laser.
  • the photosensitive layer 50 is exposed to the laser irradiation 20.
  • the laser may include a pulsed UV laser.
  • the exposed area 52 of the photosensitive layer 50 photochemically changes its color to prevent transmission of incident UV light during the photolithography exposure.
  • FIGS. 6A to 6C are cross-sectional views illustrating a method of repairing a void defect using laser-induced carbonization in accordance with a fifth exemplary embodiment of the present invention.
  • a transparent photo-reactive layer 60 is locally formed on the ink void 18.
  • the photo-reactive layer 60 may contain one kind or multiple kinds of photo-reactive particles in the coating solution.
  • the photo-reactive particles react to an incident laser beam, and generate carbonized-debris, which darkens the irradiated area.
  • the photo-reactive particles are preferably transparent and strongly absorbing polymers such as a polyimide.
  • the polyimide irradiated under a pulsed UV irradiation generates polycrystalline carbon that is deposited at the irradiated area.
  • the polycrystalline carbon, formed on the bottom of the irradiated area may significantly darken the transparent polyimide.
  • the polyimide particles may be mixed in a polymer emulsion.
  • the particle size of the polyimide is preferably small, in a range of a few nanometers to a few micrometers.
  • the emulsion preferably has a matching refractive index to the transparent polymer substrate 14.
  • a volume percentage of the polyimide particles in the emulsion may vary from 1% to 50%, and a thickness of the mixed emulsion applied over the polymer mask 10 may range between 1 ⁇ m and 500 ⁇ m.
  • the volume percent of the polyimide particles may depend on a thickness of the applied emulsion coating. Generally, a thicker emulsion coating may require a less volume percentage of the polyimide particles.
  • the polyimide generates the carbonized debris under a pulsed UV laser irradiation (see, for instance, generation of carbonization in polyimide in F. Raimondi, et. al., "Quantification of Polyimide Carbonization after Laser Ablation,” Journal of Applied Physics, vol. 88 no.6 pp. 3659-3666 (2000)).
  • the photo reactive layer 60 is exposed to the laser irradiation 20.
  • the laser may include a pulsed UV laser.
  • FIGS. 7A to 7D are cross-sectional views illustrating a method of repairing a void defect using a localized ink application induced by a laser trim in accordance with a sixth exemplary embodiment of the present invention.
  • FIG. 7A illustrates the ink void 18, and FIG. 7B illustrates a localized application of a non-transparent ink 70 over the ink void 18.
  • the non- transparent ink 70 may be any type of inks, which may block incident UV light during a photo lithography exposure, including but not limited to pigment or dye-based colorants in solvent or water-based solutions.
  • the non-transparent ink 70 may also be a UV curing ink, which is cured when being exposed to a UV light, and becomes insoluble.
  • Application of the non-transparent ink 70 may be achieved by manually or by the aforementioned small injection nozzles, including but not limited to the inkjet nozzle cartridge and the needle-type dot marker.
  • the ink 70 may be dried off, cured in ambient air or by other treatments, including but not limited to air/gas flow and heat.
  • the UV curing ink it may be cured by a flood exposure to a UV lamp/LED, or by a controlled exposure to the aforementioned pulsed UV laser.
  • an overflow of the non-transparent where the overflow means a flow of the ink to outside of the patterned area 12 of the polymer substrate
  • a laser irradiation 20 is irradiated by a laser irradiation 20 for trimming. That is, an excessive portion of a cured ink 70a from the over-application may be trimmed by the laser irradiation 20.
  • the trimming may not be readily carried out.
  • the laser irradiation may be performed using a pulsed laser with an irradiance of about 10 6 W/cm 2 to about 10 15 W/cm 2 .
  • the overflow of the cured ink 70a is selectively removed from a transparent polymer surface 72 to expose the transparent polymer surface 72.
  • the laser irradiation 20 may ablate through the polymer surface 72 up to a certain depth less than 100 ⁇ m by the aforementioned efficient ablation.
  • FIGS. 8A to 8D are cross-sectional views illustrating a method of repairing a void defect using a localized exposure of a UV curing ink induced by a laser irradiation in accordance with a seventh exemplary embodiment of the present invention.
  • FIG. 8A illustrates the ink void 18, and FIG. 8B illustrates an application of the UV curing ink 80 over the ink void 18.
  • the UV curing ink 80 Upon exposing to a UV light, the UV curing ink 80 is cured and becomes insoluble.
  • the application of the UV curing ink 80 can be achieved by manually or by the aforementioned small injection nozzles, including but not limited to the inkjet nozzle cartridge and the needle-type dot marker.
  • the irradiation 20 may be preferably from the UV pulsed laser, and preferably by a near-field imaging using a mask for forming a beam spot shape incident on the targeted area.
  • a far-field imaging may also be used for the irradiation 20, where a beam profile of the irradiation 20 is uniform enough, such as a TEMoo in Gaussian distribution.
  • the UV laser irradiation 20 may need a lower laser energy density, preferably less than 50 mJ/cm 2 , than that of the effective ablation.
  • FIG. 8D after the irradiation 20, the excessive ink on a region except for the cured ink 80a is removed to repair the void defect 18.
  • FIGS. 9A to 9D are cross-sectional views illustrating a method of repairing a void defect using a laser-induced ink transcription in accordance with an eighth exemplary embodiment of the present invention.
  • FIG. 9A illustrates the ink void 18.
  • FIG. 9B a transparent substrate 90 with an ink layer 92 having an interface 94 is placed over the ink void 18.
  • the transparent substrate 90 may be referred to as a transparent overlay.
  • the ink layer 92 and the patterned area 12 are placed together, substantially in contact with each other. Then, a localized area over the ink void 18 is exposed to a laser irradiation 20, preferably from one of the pulsed UV lasers.
  • the localized irradiation may be performed preferably by a near-field imaging using a mask for forming a beam spot shape incident on the targeted area.
  • a far-field imaging may also be used for the irradiation 20, where a beam profile of the irradiation 20 is uniform enough, such as a TEMoo in Gaussian distribution.
  • a transparent substrate 90 may have high transmission to the laser irradiation 20.
  • a fused silica maintains good optical transmission over 90%. In contrast, a soda lime glass looses its optical transmission almost down to 0% at 193 nm wavelength.
  • a fused silica may be used for the transparent substrate 90.
  • the ink layer 92 may be any type of inks, which may block incident UV light during a photo lithography exposure, including but not limited to pigment or dye- based colorants in solvent or water-based solutions.
  • the ink layer 92 may also be a colored photoresist or an emulsion with pigments.
  • the ink layer 92 may be applied by a manual method or by a spin coating.
  • the laser irradiation 20 transmits through the transparent substrate 90 and is absorbed at the interface 94. This selective irradiation at the interface 94 with the UV laser pulse utilizes the transmission (or absorption) difference of UV light between the transparent substrate 90 and the ink layer 92.
  • the laser irradiation 20 may be selected to carry an energy density well below the absorption threshold of the transparent substrate 90, allowing it to transmit through without resulting in any damage.
  • the laser energy is high enough to cause laser-induced decomposition of the ink layer 92 at the interface 94, which causes separation of the ink layer 92 from the transparent substrate 90.
  • the separation of the ink layer 92 may be achieved by the laser irradiation using a pulsed-UV laser with a laser energy density in a range of about 0.01 J/cm 2 to about 10J/cm 2 .
  • the separated ink layer 96 is transferred over the ink void 18.
  • the separated ink layer 96 may sufficiently block incident UV light during a photolithography exposure.
  • the defects such as the spot defect, the void defect, etc., in the transparent polymer mask may be readily removed using the laser. Therefore, since the above-mentioned defects may be rapidly and accurately repaired, the methods of the present invention may be effectively available for repairing the polymer mask.

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  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Laser Beam Processing (AREA)

Abstract

L'invention concerne un procédé de réparation des défauts présents sur un masque polymère à motifs au cours d'un procédé photolithographique. D'une manière générale, il existe deux types de défauts pouvant exister sur un masque polymère: la tâche d'encre sur un substrat polymère transparent et le manque d'encre dans une zone à motifs. La tâche d'encre est supprimée par l'ablation effective par un laser qui n'affecte pas sensiblement la transparence du substrat polymère. Quant au manque d'encre, divers modes de réalisation faisant intervenir des procédés de retouches au laser permettent de le combler de sorte que la lumière ultraviolette soit bloquée lors de l'exposition photolithographique.
PCT/KR2007/002333 2006-05-18 2007-05-11 Procédé de réparation de masque polymère WO2007136183A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2007800107948A CN101410947B (zh) 2006-05-18 2007-05-11 一种修补聚合物掩模的方法
JP2009510884A JP2009537859A (ja) 2006-05-18 2007-05-11 ポリマーマスクの修理方法
US12/282,662 US20090095922A1 (en) 2006-05-18 2007-05-11 Method of repairing a polymer mask

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20060044589 2006-05-18
KR10-2006-0044589 2006-05-18
KR10-2007-0029396 2007-03-26
KR1020070029396A KR100866499B1 (ko) 2006-05-18 2007-03-26 폴리머 마스크의 수리 방법

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WO2007136183A1 true WO2007136183A1 (fr) 2007-11-29

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7846847B2 (en) 2004-03-29 2010-12-07 J.P. Sercel Associates Inc. Method of separating layers of material
US8158493B2 (en) 2008-03-21 2012-04-17 Imra America, Inc. Laser-based material processing methods and systems
US8986497B2 (en) 2009-12-07 2015-03-24 Ipg Photonics Corporation Laser lift off systems and methods
US9321126B2 (en) 2004-03-31 2016-04-26 Imra America, Inc. Laser-based material processing apparatus and methods
US9669613B2 (en) 2010-12-07 2017-06-06 Ipg Photonics Corporation Laser lift off systems and methods that overlap irradiation zones to provide multiple pulses of laser irradiation per location at an interface between layers to be separated

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990085563A (ko) * 1998-05-19 1999-12-06 와그너 알프레드 마스크 결함 수정 방법
JP2000031013A (ja) * 1998-07-10 2000-01-28 Omron Corp 回路パターンの修復方法及び装置、並びに、回路パターン修復用転写板
WO2004027684A2 (fr) * 2002-09-18 2004-04-01 Fei Company Reparation de masques photolithographiques

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990085563A (ko) * 1998-05-19 1999-12-06 와그너 알프레드 마스크 결함 수정 방법
JP2000031013A (ja) * 1998-07-10 2000-01-28 Omron Corp 回路パターンの修復方法及び装置、並びに、回路パターン修復用転写板
WO2004027684A2 (fr) * 2002-09-18 2004-04-01 Fei Company Reparation de masques photolithographiques

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7846847B2 (en) 2004-03-29 2010-12-07 J.P. Sercel Associates Inc. Method of separating layers of material
US9321126B2 (en) 2004-03-31 2016-04-26 Imra America, Inc. Laser-based material processing apparatus and methods
US8158493B2 (en) 2008-03-21 2012-04-17 Imra America, Inc. Laser-based material processing methods and systems
US8986497B2 (en) 2009-12-07 2015-03-24 Ipg Photonics Corporation Laser lift off systems and methods
US10297503B2 (en) 2009-12-07 2019-05-21 Ipg Photonics Corporation Laser lift off systems and methods
US10974494B2 (en) 2009-12-07 2021-04-13 Ipg Photonics Corporation Laser lift off systems and methods that overlap irradiation zones to provide multiple pulses of laser irradiation per location at an interface between layers to be separated
US11239116B2 (en) 2009-12-07 2022-02-01 Ipg Photonics Corporation Laser lift off systems and methods
US9669613B2 (en) 2010-12-07 2017-06-06 Ipg Photonics Corporation Laser lift off systems and methods that overlap irradiation zones to provide multiple pulses of laser irradiation per location at an interface between layers to be separated

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