WO2007133837A2 - Low temperature deposition of phase change memory materials - Google Patents
Low temperature deposition of phase change memory materials Download PDFInfo
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- WO2007133837A2 WO2007133837A2 PCT/US2007/063832 US2007063832W WO2007133837A2 WO 2007133837 A2 WO2007133837 A2 WO 2007133837A2 US 2007063832 W US2007063832 W US 2007063832W WO 2007133837 A2 WO2007133837 A2 WO 2007133837A2
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- WIPO (PCT)
- Prior art keywords
- precursors
- alkyl
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- precursor
- deposition
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Links
- 230000008021 deposition Effects 0.000 title claims abstract description 78
- 239000000463 material Substances 0.000 title claims abstract description 66
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- 238000000034 method Methods 0.000 claims abstract description 118
- 238000000151 deposition Methods 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 54
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 49
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 47
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 38
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 34
- 239000000956 alloy Substances 0.000 claims abstract description 34
- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 30
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 29
- VDDXNVZUVZULMR-UHFFFAOYSA-N germanium tellurium Chemical compound [Ge].[Te] VDDXNVZUVZULMR-UHFFFAOYSA-N 0.000 claims abstract description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract 9
- 229910000618 GeSbTe Inorganic materials 0.000 claims description 42
- 150000001875 compounds Chemical class 0.000 claims description 37
- 125000001424 substituent group Chemical group 0.000 claims description 37
- 239000000376 reactant Substances 0.000 claims description 31
- 125000000217 alkyl group Chemical group 0.000 claims description 29
- 125000003118 aryl group Chemical group 0.000 claims description 23
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 23
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 22
- 230000005855 radiation Effects 0.000 claims description 22
- 125000006552 (C3-C8) cycloalkyl group Chemical group 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 21
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- 150000004820 halides Chemical class 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- VGRFVJMYCCLWPQ-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge] VGRFVJMYCCLWPQ-UHFFFAOYSA-N 0.000 claims description 19
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- 150000002527 isonitriles Chemical class 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 239000003446 ligand Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 16
- 125000004407 fluoroaryl group Chemical group 0.000 claims description 14
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- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 13
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 12
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 125000005353 silylalkyl group Chemical group 0.000 claims description 12
- 238000003786 synthesis reaction Methods 0.000 claims description 12
- 229910006149 GeI4 Inorganic materials 0.000 claims description 11
- 125000003282 alkyl amino group Chemical group 0.000 claims description 11
- CUDGTZJYMWAJFV-UHFFFAOYSA-N tetraiodogermane Chemical compound I[Ge](I)(I)I CUDGTZJYMWAJFV-UHFFFAOYSA-N 0.000 claims description 11
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 10
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 10
- 229910052801 chlorine Inorganic materials 0.000 claims description 9
- KWQLUUQBTAXYCB-UHFFFAOYSA-K antimony(3+);triiodide Chemical compound I[Sb](I)I KWQLUUQBTAXYCB-UHFFFAOYSA-K 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 125000005842 heteroatom Chemical group 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 238000003860 storage Methods 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 7
- 150000001463 antimony compounds Chemical class 0.000 claims description 7
- 239000012159 carrier gas Substances 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 6
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 6
- 229940058905 antimony compound for treatment of leishmaniasis and trypanosomiasis Drugs 0.000 claims description 6
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 6
- GPMBECJIPQBCKI-UHFFFAOYSA-N germanium telluride Chemical compound [Te]=[Ge]=[Te] GPMBECJIPQBCKI-UHFFFAOYSA-N 0.000 claims description 6
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 6
- 150000002825 nitriles Chemical class 0.000 claims description 6
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- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 5
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- VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 claims description 4
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- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
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- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 3
- 150000002466 imines Chemical class 0.000 claims description 3
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- 229910003002 lithium salt Inorganic materials 0.000 claims description 3
- 159000000002 lithium salts Chemical class 0.000 claims description 3
- 238000006464 oxidative addition reaction Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
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- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 239000007818 Grignard reagent Substances 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
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- 125000000753 cycloalkyl group Chemical group 0.000 claims description 2
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- 238000010574 gas phase reaction Methods 0.000 claims description 2
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052986 germanium hydride Inorganic materials 0.000 claims description 2
- IMJFOQOIQKIVNJ-UHFFFAOYSA-N germanium(2+) Chemical compound [Ge+2] IMJFOQOIQKIVNJ-UHFFFAOYSA-N 0.000 claims description 2
- 150000004795 grignard reagents Chemical class 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
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- 125000001188 haloalkyl group Chemical group 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
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- 150000003973 alkyl amines Chemical class 0.000 description 2
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- OKJPEAGHQZHRQV-UHFFFAOYSA-N Triiodomethane Natural products IC(I)I OKJPEAGHQZHRQV-UHFFFAOYSA-N 0.000 description 1
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- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Chemical group BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
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- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
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- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
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- 230000037361 pathway Effects 0.000 description 1
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- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/30—Germanium compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
Definitions
- the present invention relates to low temperature deposition of phase change memory materials, by deposition techniques such as chemical vapor deposition and atomic layer deposition, to form microelectronic device structures.
- Phase Change Memory refers to a novel memory technology based on chalcogenide materials that undergo a phase change via a heater and are read out as “0" or “1 " based on their electrical resistivity, which changes in correspondence to whether the phase change material in the cell is in the crystalline or amorphous phase.
- the chalcogenide materials used in PCM comprise a large number of binary, ternary, and quaternary alloys of a number of metals and metalloids. Examples include GeSbTe, GeSbInTe, and many others. As contained herein, the identification of compounds such as GeSbTe and GeSbInTe without appertaining stoichiometric coefficients or values will be understood as a general representation inclusive of all forms of such compounds containing the specified elements, and inclusive of all appertaining stoichiometric coefficients and values. For example, the reference to GeSbInTe includes Ge 2 Sb 2 Te S , as well as all other stoichiometric forms of such compound GeSbInTe.
- PCM devices require relatively pure chalconide material alloys, with well controlled composition.
- Current processes for making PCM devices utilize physical vapor deposition to deposit thin films of these chalconide materials.
- the thick planar structures of the current generation are well-served by PVD.
- the chalconide material must be deposited into vias in order to control the phase transition and the necessary heat transfer. Such implementation of chalconide materials can also be beneficial in improving reliability of small volume devices.
- a major deficiency in the current art is the requirement of high deposition temperatures needed for conventionally employed alkyl (e.g., Me 3 Sb, Me 2 Te) or halide sources. These temperatures are typically well in excess of 300°C, and may for example be on the order of 500°C. Such high temperatures substantially exceed the thermal budget for device integration and can result in the evaporation of the chalcogenide, rendering the product PCM device deficient or even useless for its intended purpose.
- the present invention relates to systems and processes for deposition of phase change memory material on substrates, for fabrication of a phase change memory devices.
- the invention relates in one aspect to a method of forming a phase change memory material on a substrate, comprising contacting the substrate with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, wherein such conditions comprise temperature below 350°C and such contacting comprises chemical vapor deposition or atomic layer deposition.
- the invention in another aspect, relates to a method of forming a germanium- antimony-tellurium phase change memory material on a substrate, comprising contacting the substrate with precursors for a phase change memory germanium-antimony-tellurium alloy under conditions producing deposition of the germanium-antimony-tellurium alloy on the substrate, wherein such conditions comprise temperature below 350°C and such contacting comprises chemical vapor deposition or atomic layer deposition, with the precursors comprising at least one halide precursor.
- Yet another aspect of the invention relates to a system for fabricating a phase change memory device including a phase change memory material on a substrate, such system including a deposition tool adapted to receive precursors from precursor supply packages, and precursor supply packages containing precursors for forming a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, wherein such deposition tool is adapted for chemical vapor deposition or atomic layer deposition operation under conditions comprising deposition temperature below 350°C.
- a further aspect of the invention relates to a system for fabricating a germanium- antimony-tellurium phase change memory device including a germanium-antimony-tellurium phase change memory material on a substrate, such system comprising a deposition tool adapted to receive precursors from precursor supply packages, and precursor supply packages containing germanium, antimony and tellurium precursors for forming a germanium-antimony- tellurium phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, wherein the deposition tool is adapted for chemical vapor deposition or atomic layer deposition operation under conditions comprising deposition temperature below 350°C, and at least one of the precursor supply packages contains a halide precursor.
- Additional aspects of the invention relate to PCM films formed in accordance with the present invention; corresponding devices; tellurium complexes, germanium complexes, germanium tellurides, and processes utilizing same for forming GST films; compositions including combinations of precursors for forming PCM films; and packaged precursors adapted for coupling to a deposition tool comprising such compositions, as hereinafter more fully described.
- FIG. 1 is a schematic representation of a phase change memory device comprising a phase change memory material film formed on a substrate, according to one embodiment of the invention.
- FIG. 2 is a schematic representation of a process installation including a deposition tool for depositing a phase change memory material on a substrate in accordance with one embodiment of the invention, from respective precursor supply packages of germanium precursor, antimony precursor and tellurium precursor.
- the present invention relates to deposition of phase change memory materials to form PCM devices.
- the invention in one aspect relates to chalcogenide alloys, and to their low temperature deposition e.g., by chemical vapor deposition (CVD) or atomic layer deposition (ALD), to form PCM devices.
- CVD and ALD methods are employed in the practice of the present invention to achieve scalability to large area wafers and for composition control.
- Preferred chalconide alloys include alloys including two or more of germanium, antimony and tellurium.
- low temperature means a temperature below 350°C.
- the temperature at which the PCM material is deposited is preferably less than 300°C, more preferably less than 250°C and most preferably less than 225°C.
- the invention relates to a method of forming a phase change memory material on a substrate, comprising contacting the substrate with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, wherein such conditions comprise temperature below 350°C and such contacting comprises chemical vapor deposition or atomic layer deposition.
- Such method may further include fabricating said phase change memory material is into a phase change memory device.
- the chalcogenide metal and metal alloy precursors that are advantageously used for forming PCM films and devices include:
- R is butyl or propyl, with R preferably being t-butyl or isopropyl
- M is a metal having an oxidation state y, e.g., Ge, Sb or Te
- x> 1 e.g., Ge, Sb or Te
- y-x may have a zero value
- R is butyl or propyl, with R preferably being t-butyl or isopropyl
- X is F, Cl, or Br
- M is a metal having an oxidation state y, e.g., Ge, Sb or Te
- x> 1 and (y-x) may have a zero value;
- Ge(II) compounds of the formula Ge(R ) 2 wherein the R substituents are the same as or different from one another, and each R 3 is independently selected from among silyl, silylalkyl and substituted silylalkyl, e.g., wherein each R 3 is -CH(SiMe 3 ) 2 ;
- component metal species may have different oxidation states in the various above-mentioned compounds.
- antimony compounds of group (viii) are light-sensitive in character and amenable to light/UV-activated processes for PCM deposition.
- Such compounds thus may be exposed to radiation for activation during the deposition, involving visible light exposure or ultraviolet light exposure.
- the deposition may be carried out in a chamber of a deposition reactor, as a deposition tool that is arranged and adapted for production of PCM products.
- the invention contemplates the provision of doping of the deposited PCM material, with dopant species that improve the character of the deposited material for PCM applications. For example, oxygen doping may be employed, or doping with other implanted species, to provide PCM films of superior character.
- the invention also contemplates the in situ doping of the PCM material at the time of its formation on the substrate.
- a still further aspect of the invention relates to a system for fabricating a phase change memory device including a phase change memory material on a substrate, such system including a deposition tool adapted to receive precursors from precursor supply packages, and precursor supply packages containing precursors for forming a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, wherein such deposition tool is adapted for chemical vapor deposition or atomic layer deposition operation under conditions comprising deposition temperature below 350°C.
- the chalcogenide metal and alloy precursors described above have been discovered to provide superior deposition when utilized in CVD and ALD processes, with lower deposition temperatures employed in the CVD or ALD process than have heretofore been achievable using physical vapor deposition techniques.
- Such lower temperature deposition capability in CVD and ALD processes is realized as a result of the chalcogenide metal or metal alloy compound undergoing beta hydrogen elimination reaction in the CVD and ALD deposition processes, e.g., involving iso-propyl and/or t-butyl groups.
- the digermane compositions benefit from the low bond energy of Ge-Ge.
- the Ge(II) compounds are easier to reduce than Ge(IV) compounds.
- the chalcogenide metal or metal alloy precursors for the PCM material deposition may be provided in any suitable form, including solids, liquids and gases, and multiphase compositions, depending on the specific precursors involved.
- the precursors can be delivered to the deposition chamber, for carrying out CVD or ALD therein, by any suitable delivery techniques, dependent on their phase characteristics, required flow rate, temperature, etc.
- Co- reactants may be employed with the precursors to effect the CVD or ALD operation.
- the precursor and co-reactant species can be supplied from material storage and dispensing packages of any suitable type, depending on the phase and the material characteristics of the precursor involved.
- the storage and dispensing packages may include supply vessels of a type commercially available from ATMI, Inc.
- the storage and dispensing packages in preferred practice can comprise sub -atmospheric pressure systems providing improved safety and cost of ownership character, in relation to conventional high pressure material sources, such as the aforementioned packages available under the SDS, VAC and SAGE trademarks.
- At least one of the precursors can be delivered for the contacting from a storage and dispensing vessel containing at least one of physical adsorbent, a gas low pressure regulator, a heat transfer structure, or an ionic liquid.
- the storage and dispensing vessel advantageously is adapted to contain precursor at sub -atmospheric pressure.
- the precursor when in a solid or liquid form can be volatilized to form a precursor vapor which then is flowed to the deposition chamber and contacted with the substrate on which the PCM device is to be fabricated.
- the substrate in such instance can be suitably heated, by a susceptor or other heating arrangement, whereby the contact between the precursor vapor and the substrate results in the deposition of a PCM material, e.g., in a film, on the substrate.
- a PCM material e.g., in a film
- film means a layer of the PCM material that is below 1 micrometer in thickness.
- the precursors In the delivery operation associated with the CVD or ALD process, wherein the precursors are in a liquid state, separate bubblers or other delivery equipment can be employed for each precursor. Liquid injection of mixtures of precursors can be advantageously employed to manage disparate volatilities of the different precursors and to deliver precise volumetric flows of precursor medium having a desired composition.
- the precursors In the precursor delivery, the precursors may be utilized in the form of neat liquids, or precursor/solvent mixtures may be employed, in which the precursor is dissolved or suspended in a compatible solvent medium. Suitable solvents for such purpose can be identified by solubility and compatibility data for the precursor(s) of interest, or by routine solvent screening determinations, within the skill of the art, based on the disclosure herein.
- PCM material is deposited on the substrate by CVD or ALD techniques, in accordance with the invention.
- CVD chemical vapor deposition
- continuous CVD in a thermal mode may be employed, with the CVD operation being conducted in a suitable CVD reactor chamber.
- the precursor vapor can be delivered in a carrier gas stream including the precursor vapor, and a carrier gas such as hydrogen, or other reducing gas, or an inert gas, or an oxidant, as may be desirable in a specific application.
- a dose step involving introduction of the precursor vapor is alternated with injection into the deposition chamber of a co-reactant.
- the co-reactant can be of any suitable type, as effective to provide a PCM material layer of desired character on the substrate.
- the alternatingly introduced co-reactant is a hydrogen plasma, or other plasma co-reactant.
- UV radiation or other light source "tuned” to the precursor to effect the deposition of the desired PCM material.
- Light used for such purpose can be continuous with the precursor introduction, or may be dosed separately into the deposition chamber to avoid gas-phase reactions.
- the pulsed introduction of reagents into the deposition chamber in atomic layer deposition operation can include introduction of a reductive co-reactant in alternation with the introduction of the metal or metal alloy precursor.
- the reductive co-reactant may for example include GeH 4 .
- the invention further contemplates use of a reductive co-reactant that is activatable by radiation exposure.
- the precursor for formation of the PCM material on the substrate is alternatingly pulsed into the deposition chamber.
- both PCM material and the co-reactant are radiation-activatable, then it may be desirable to maintain radiation generation and exposure throughout the deposition operation.
- it may be desirable in some instances to pulse the radiation so that the radiation source is pulsed on when the precursor is not turned on.
- the invention relates to low temperature deposition of germanium-antimony-tellurium (Ge-Sb-Te, or "GST”) material on substrates by a halide precursor approach.
- Ge-Sb-Te germanium-antimony-tellurium
- the invention in such aspect relates to a method of forming a germanium-antimony-tellurium phase change memory material on a substrate, comprising contacting the substrate with precursors for a phase change memory germanium- antimony- tellurium alloy under conditions producing deposition of the germanium-antimony-tellurium alloy on the substrate, wherein such conditions comprise temperature below 350°C and such contacting comprises chemical vapor deposition or atomic layer deposition, with the precursors comprising at least one halide precursor.
- Germanium, antimony and tellurium halides are volatile, and usefully employed for depositing GST thin films.
- their iodides are volatile and the corresponding metal- iodine bonds are weak.
- GeI 4 , SbI 3 and TeI 2 are preferred halide source reagents for formation of GST films by CVD or ALD, e.g., using solid precursor delivery techniques.
- one or two of the respective (Ge, Sb, Te) metals can be supplied from an iodide or other halide precursor compound(s), and the other one(s) of the metals can be supplied from alkyl metal compound(s).
- the precursors can include GeI 4 and TeI 2 as halide precursors and Sb(CH 3 ) 3 as an alkyl precursor, to form the GST layer on the substrate.
- the alkyl(s) function as reducing agent(s) to eliminate iodo-methane, thereby enabling the achievement of clean GST films at low temperature.
- the precursor delivery and deposition conditions can be readily determined, as appropriate for a given application of forming a GST material on a substrate, by simple empirical determination, to identify suitable temperatures, pressures, flow rates and concentrations to be employed for formation of suitable GST deposits on the substrate.
- the invention contemplates a system for fabricating a germanium- antimony- tellurium phase change memory device including a germanium-antimony-tellurium phase change memory material on a substrate, such system comprising a deposition tool adapted to receive precursors from precursor supply packages, and precursor supply packages containing germanium, antimony and tellurium precursors for forming a germanium-antimony-tellurium phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, wherein the deposition tool is adapted for chemical vapor deposition or atomic layer deposition operation under conditions comprising deposition temperature below 350°C, and at least one of the precursor supply packages contains a halide precursor.
- Substrates in the general practice of the present invention can be of any suitable type, and may be doped or undoped, semiconducting, semi-insulating, or of other suitable character for the device structure of the PCM product.
- Useful substrates in specific applications may include silicon, sapphire, gallium arsenide, gallium nitride, silicon carbide, and the like.
- FIG. 1 is a schematic representation of a phase change memory device 10 comprising a phase change memory material film 14 formed on a substrate 12, according to one embodiment of the invention.
- the film 14 may comprise a germanium-antimony-tellurium (GST) film, and the substrate may comprise any suitable substrate compatible with such film.
- GST germanium-antimony-tellurium
- FIG. 2 is a schematic representation of a process installation 100 including a deposition tool 120 for depositing a phase change memory material on a substrate in accordance with one embodiment of the invention, from respective precursor supply packages 102, 104 and 106 of germanium precursor (in vessel 102 labeled “Ge)), antimony precursor (in vessel 104 labeled “Sb”) and tellurium precursor (in vessel 106 labeled “Te”).
- Each of the precursor supply packages includes a storage and dispensing vessel equipped with a valve head assembly including a flow control valve that may be manually or automatically operated, to dispense the appertaining precursor on demand at a desired flow rate.
- each of the precursor supply vessels is coupled with flow circuitry for delivery of the dispensed precursor to the tool 120.
- the germanium precursor supply package 102 is coupled to the tool by line 110
- the antimony precursor supply package 104 is coupled to the tool by line 112
- the tellurium precursors supplied package 106 is coupled to the tool by line 114.
- the tool can comprise a chemical vapor deposition (CVD) tool, an atomic layer deposition (ALD) tool, or other suitable tool adapted to receive the respective precursors and to form a PCM alloy film on a substrate, in the fabrication of a corresponding PCM device.
- CVD chemical vapor deposition
- ALD atomic layer deposition
- Another aspect of the invention relates to dopants in GeSbTe semiconductors, which can be formed in polycrystalline form and thereby accommodate a wider range of stoichiometries and dopants than typical semiconductors.
- Doping with nitrogen from levels of a few tenths of 1 % to a few percent can be beneficial to properties of such materials in specific applications.
- nitrogen is directed primarily to nitrogen as the dopant species, it will be appreciated that the invention is not thus limited, and extends to the use of other dopant species.
- Doping may be carried out by use of a reactant gas such as ammonia, or a vaporizable liquid such as an amine, to introduce nitrogen into the film.
- the reaction gas may be introduced separately, as a co-reactant, or it may be used as a carrier for the precursor(s), in which case it may also act as a stabilizing agent for the precursor. If this reactant gas reacts in the gas phase with the precursor(s), it may be necessary to pulse it alternately with the precursor(s), optionally with purge steps between pulses. Such pulsing may also be beneficial if it is desirable to have non-homogeneous layers, in order to achieve different dopant concentrations in contact with one or more electrodes for physical (sticking layer) or electrical (fermi layer adjustment) purposes.
- Doping may also be affected by incorporation of nitrogen from a precursor.
- Process adjustments such as conducting the deposition in certain "process windows" of reactor pressure, temperature, and/or gas flow can be employed to control the amount of N incorporated, thereby enabling adjustment of doping parameters.
- Specific precursors for one or more of Ge, Sb and Te materials may be employed for such purpose.
- NH 3 as a coreactant can be employed to enable lower temperature deposition and to promote N incorporation into the GST layer, compared to using H 2 as a coreactant.
- Another aspect of the invention relates to tellurium complexes with beta- diketiminate ligands, which overcome the problems that many tellurium precursors used in deposition applications are very oxygen-sensitive and light-sensitive, and have an unpleasant odor.
- base stabilization with beta-diketiminate ligands a tellurium precursor is obtained of a highly stable character with improved handling and shelf life characteristics, reduced odor, and sufficient volatility for deposition applications.
- the tellurium diketiminate complexes of the invention can be used for CVD/ ALD to form Te or Te-containing films. These compounds can be used in combination with Ge- and/or Sb-compounds to produce Te-Ge-, Te-Sb- or Ge-Sb-Te films in varied compositions.
- a general procedure to synthesize diketiminate ligands has been described in the literature, but such procedure is disadvantageous, since very bulky aryl substituents on the coordinating nitrogen atoms are required.
- the free imine form of the ligand L can be reacted with a tellurium organic compound such as TeMe 4 to produce the desired Te species LTeMe 3 by methane elimination.
- TeMe 4 a tellurium organic compound
- the diketiminate ligands provide very effective base stabilization of the reactive metal center tellurium.
- the invention therefore provides a new class of Te complexes that provide greater stability and shelf life, while retaining sufficient volatility to form superior Te films via C VD/ ALD at low temperatures.
- the tellurium complexes of the invention have the formulae (I) and (II):
- R 1 , R 2 and R 3 they be the same as or different from one another, and each is independently selected from Ci-C 6 alkyl, C 6 -Ci 0 aryl, silyl and Ci-Ci 2 alkylamine (which includes both monoalkylamine as well as dialkylamine); and
- Ri, R 2 and R 3 they be the same as or different from one another, and each is independently selected from Ci-C 6 alkyl, C 6 -Ci O aryl, silyl and Ci-Ci 2 alkylamine (which includes both monoalkylamine as well as dialkylamine).
- beta-diketiminate ligands may for example be synthesized by the following procedure:
- the tellurium complexes of the invention are usefully employed as CVD/ALD precursors for deposition of tellurium-containing thin films, e.g., by liquid injection of neat precursor material, or in organic solvent or by direct evaporation.
- the invention in another aspect relates to germanium complexes and their use in CVD/ALD for forming germanium-containing films, e.g., GST films, wherein the germanium complexes are selected from among:
- R groups in the second formula may be the same as or different from one another, and each is independently selected from among H, Ci-C 6 alkyl, C 6 -Ci 0 aryl, C 3 -C 8 cycloalkyl, heteroatom groups, and other organo groups.
- Another aspect of the invention relates to digermane and strained ring germanium precursors for CVD/ALD of germanium-containing thin films.
- Previously employed germanium precursors such as germane that have been used for forming GST (germanium- antimony-tellurium) films for phase change memory devices require very high temperature deposition conditions. This in turn makes it difficult to form a pure Ge 2 Sb 2 Te 5 phase material.
- the present invention overcomes this deficiency in the provision of precursors having a high vapor pressure at ambient conditions, which are useful to deposit germanium-containing films at temperatures below 300°C.
- Germanium-germanium bonds are inherently weak ( ⁇ 188 kJ/mole) and become less stable with electron withdrawing substituents such as chlorine or NMe 2 . Such bonds can readily dissociate to form R 3 Ge radicals under UV photolysis or thermolysis, or by chemical oxidation using peroxides, ozone, oxygen or plasma.
- Commercially available digermanes include hydride, methyl, phenyl, or ethyl groups that require high temperatures for decomposition and the resulting films are often contaminated with carbon residues.
- germanium complexes using as ligands isopropyl, isobutyl, benzyl, allyl, alkylamino, nitriles, or isonitriles to achieve complexes that enabled the deposition of pure germanium metal films at low temperatures.
- the invention contemplates strained-ring germanium complexes (e.g., germacyclobutane) that can undergo thermal ring opening to generate a diradical intermediate that readily dissociates to germylene fragments.
- the bond dissociation energy of the strained Ge-C bond (63 kcal/mol) is considerable lower than Ge-CH 3 (83 kcal/mol), thereby enabling lower temperature film deposition of germanium to be achieved, than has been achievable with the aforementioned conventional germanium precursors.
- germanium complexes of the invention include those of formulae (I) - (III) below:
- each R may be the same as or different from the others, and each is independently selected from among isopropyl, isobutyl, benzyl, allyl, alkylamino, nitriles, and isonitriles;
- each R may be the same as or different from the others, and each is independently selected from among isopropyl, isobutyl, benzyl, allyl, alkylamino, nitriles, and isonitriles;
- each of R 1 , R 2 , R 3 and R 4 may be the same as or different from the others, and each is independently selected from among H, Ci-C ⁇ alkyl, C ⁇ -Cio aryl, C 3 -C 8 cycloalkyl, or a heteroatom group.
- the complexes (I) can be synthesized, by way of example, according to the following synthesis process:
- germanium complexes of formula (II) can be formed by the following illustrated procedure:
- the strained ring alkylgermanes are usefully employed as CVD/ ALD precursors for forming germanium-containing thin films on substrates involving reactions such as those illustratively shown below.
- Another aspect of the invention relates to a single-source precursor for germanium and tellurium, as useful in the formation of GST films.
- Such single-source of germanium telluride precursors may be used in combination with an antimony precursor for GST film formation, optionally with co-reactants as may be desirable to provide films of appropriate stoichiometry for a given application.
- the germanium telluride complexes of the invention in one aspect include dialkylgermanetellurones.
- Suitable dialkylgermanetellurones can be synthesized by oxidative addition reaction of germanium (II) dialkyls with elemental tellurium powder in a solvent medium such as tetrahydrofuran (THF). In some instances so it may be desirable to conduct the reaction in the absence of light, depending on the light-sensitivity of the product germanium-tellurium complex.
- THF tetrahydrofuran
- the single-source Ge-Te precursors of the invention can be advantageously used to facilitate lower temperature deposition processes or to increase GST film growth rates in specific applications.
- Germanium tellurides of the invention in another embodiment, can be formed by the following synthesis procedure:
- germanium telluride complexes can be formed by the following synthesis process:
- E is tellurium
- M is Li, Na, or K
- X is chlorine, bromine or iodine
- the R and R' groups may be the same as or different from one another, and each is independently selected from among H, Ci-C ⁇ alkyl, C ⁇ -Cio aryl, C 3 -C 8 cycloalkyl, heteroatom groups, and other organo groups.
- One Ge-Te complex of the invention is:
- each of the R substituents may be the same as or different from one another, and is independently selected from among H, Ci-C ⁇ alkyl, C ⁇ -Cio aryl, C 3 -C 8 cycloalkyl, heteroatom groups, and other organo groups.
- the present invention contemplates a variety of precursors suitable for use in forming phase change memory films, e.g., GST films, and that the various precursors of the invention include precursors enabling deposition of films via CVD/ALD processes at temperatures below 300°C, as well as Ge-Te precursors affording substantial advantage in forming germanium- and tellurium-containing films.
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JP2009509899A JP2009536986A (en) | 2006-05-12 | 2007-03-12 | Low temperature deposition of phase change memory materials |
KR1020087030213A KR101499260B1 (en) | 2006-05-12 | 2007-03-12 | low temperature deposition of phase change memory materials |
EP07758385A EP2018642A4 (en) | 2006-05-12 | 2007-03-12 | Low temperature deposition of phase change memory materials |
US12/300,459 US8288198B2 (en) | 2006-05-12 | 2007-03-12 | Low temperature deposition of phase change memory materials |
US13/610,928 US8679894B2 (en) | 2006-05-12 | 2012-09-12 | Low temperature deposition of phase change memory materials |
US14/223,500 US8877549B2 (en) | 2006-05-12 | 2014-03-24 | Low temperature deposition of phase change memory materials |
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US13/610,928 Continuation US8679894B2 (en) | 2006-05-12 | 2012-09-12 | Low temperature deposition of phase change memory materials |
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Cited By (29)
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US9214630B2 (en) | 2013-04-11 | 2015-12-15 | Air Products And Chemicals, Inc. | Method of making a multicomponent film |
US9240319B2 (en) | 2010-02-03 | 2016-01-19 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition |
EP3014651A4 (en) * | 2013-06-26 | 2016-11-23 | Applied Materials Inc | Methods of depositing a metal alloy film |
US10941487B2 (en) | 2009-10-26 | 2021-03-09 | Asm Ip Holding B.V. | Synthesis and use of precursors for ALD of group VA element containing thin films |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2302094A1 (en) | 2006-05-12 | 2011-03-30 | Advanced Technology Materials, Inc. | Low temperature deposition of phase change memory materials |
KR100757415B1 (en) * | 2006-07-13 | 2007-09-10 | 삼성전자주식회사 | Germanium compound, method for fabricating thereof, phase-change memory device using the same and method for forming thereof |
KR20120118060A (en) | 2006-11-02 | 2012-10-25 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Antimony and germanium complexes useful for cvd/ald of metal thin films |
KR100871692B1 (en) * | 2006-11-07 | 2008-12-08 | 삼성전자주식회사 | Metal precursor for low temperature deposition, method of forming metal layer using the precursor and method of fabricating phase-change memory device using the precursor |
KR101275799B1 (en) * | 2006-11-21 | 2013-06-18 | 삼성전자주식회사 | Method of forming phase change layer using Ge precursor for low temperature deposition and method of manufacturing phase change memory device using the same |
KR100888617B1 (en) * | 2007-06-15 | 2009-03-17 | 삼성전자주식회사 | Phase Change Memory Device and Method of Forming the Same |
JP2011511881A (en) | 2007-06-28 | 2011-04-14 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | Precursor for silicon dioxide gap filler |
US20090087561A1 (en) * | 2007-09-28 | 2009-04-02 | Advanced Technology Materials, Inc. | Metal and metalloid silylamides, ketimates, tetraalkylguanidinates and dianionic guanidinates useful for cvd/ald of thin films |
US8834968B2 (en) | 2007-10-11 | 2014-09-16 | Samsung Electronics Co., Ltd. | Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device |
KR101458953B1 (en) * | 2007-10-11 | 2014-11-07 | 삼성전자주식회사 | Method of forming phase change material layer using Ge(Ⅱ) source, and method of fabricating phase change memory device |
SG178736A1 (en) * | 2007-10-31 | 2012-03-29 | Advanced Tech Materials | Amorphous ge/te deposition process |
WO2009059237A2 (en) * | 2007-10-31 | 2009-05-07 | Advanced Technology Materials, Inc. | Novel bismuth precursors for cvd/ald of thin films |
US20090215225A1 (en) | 2008-02-24 | 2009-08-27 | Advanced Technology Materials, Inc. | Tellurium compounds useful for deposition of tellurium containing materials |
US20090263934A1 (en) * | 2008-04-22 | 2009-10-22 | Samsung Electronics Co., Ltd. | Methods of forming chalcogenide films and methods of manufacturing memory devices using the same |
US8674127B2 (en) | 2008-05-02 | 2014-03-18 | Advanced Technology Materials, Inc. | Antimony compounds useful for deposition of antimony-containing materials |
WO2009152108A2 (en) * | 2008-06-10 | 2009-12-17 | Advanced Technology Materials, Inc. | GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRISTALLINITY |
US8372483B2 (en) * | 2008-06-27 | 2013-02-12 | Asm International N.V. | Methods for forming thin films comprising tellurium |
US8330136B2 (en) | 2008-12-05 | 2012-12-11 | Advanced Technology Materials, Inc. | High concentration nitrogen-containing germanium telluride based memory devices and processes of making |
WO2010135702A2 (en) * | 2009-05-22 | 2010-11-25 | Advanced Technology Materials, Inc. | Low temperature gst process |
JP2010287615A (en) * | 2009-06-09 | 2010-12-24 | Tokyo Electron Ltd | Method for film-forming ge-sb-te film, and storage medium |
JP2011054935A (en) * | 2009-06-19 | 2011-03-17 | Rohm & Haas Electronic Materials Llc | Doping method |
US8410468B2 (en) * | 2009-07-02 | 2013-04-02 | Advanced Technology Materials, Inc. | Hollow GST structure with dielectric fill |
US20110108792A1 (en) * | 2009-11-11 | 2011-05-12 | International Business Machines Corporation | Single Crystal Phase Change Material |
US20110124182A1 (en) * | 2009-11-20 | 2011-05-26 | Advanced Techology Materials, Inc. | System for the delivery of germanium-based precursor |
US8017432B2 (en) * | 2010-01-08 | 2011-09-13 | International Business Machines Corporation | Deposition of amorphous phase change material |
US9012876B2 (en) | 2010-03-26 | 2015-04-21 | Entegris, Inc. | Germanium antimony telluride materials and devices incorporating same |
WO2011123675A1 (en) | 2010-04-01 | 2011-10-06 | President And Fellows Of Harvard College | Cyclic metal amides and vapor deposition using them |
US9190609B2 (en) | 2010-05-21 | 2015-11-17 | Entegris, Inc. | Germanium antimony telluride materials and devices incorporating same |
US8148197B2 (en) | 2010-07-27 | 2012-04-03 | Micron Technology, Inc. | Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same |
KR20140063684A (en) * | 2011-08-19 | 2014-05-27 | 도쿄엘렉트론가부시키가이샤 | Method for forming ge-sb-te film, method for forming ge-te film, method for forming sb-te film, and program |
JP5905858B2 (en) * | 2012-08-13 | 2016-04-20 | エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated | Precursor for GST film in ALD / CVD process |
CN103779496B (en) * | 2012-10-25 | 2017-07-28 | 中芯国际集成电路制造(上海)有限公司 | The preparation method of phase-change memory cell |
US9640757B2 (en) | 2012-10-30 | 2017-05-02 | Entegris, Inc. | Double self-aligned phase change memory device structure |
US9663546B2 (en) | 2013-07-26 | 2017-05-30 | President And Fellows Of Harvard College | Metal amides of cyclic amines |
WO2017030346A1 (en) * | 2015-08-17 | 2017-02-23 | 주식회사 유피케미칼 | Ge(ii)-containing precursor composition and method for forming germanium-containing film using precursor composition |
US10283704B2 (en) | 2017-09-26 | 2019-05-07 | International Business Machines Corporation | Resistive memory device |
US10808316B2 (en) | 2018-05-10 | 2020-10-20 | International Business Machines Corporation | Composition control of chemical vapor deposition nitrogen doped germanium antimony tellurium |
TW202409324A (en) | 2018-06-27 | 2024-03-01 | 荷蘭商Asm Ip私人控股有限公司 | Cyclic deposition processes for forming metal-containing material |
TW202212605A (en) * | 2020-09-22 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | Systems, devices, and methods for depositing a layer comprising a germanium chalcogenide |
WO2024076218A1 (en) * | 2022-10-07 | 2024-04-11 | 솔브레인 주식회사 | Chalcogenide-based thin-film modifier, and semiconductor substrate and semiconductor device produced using same |
Family Cites Families (145)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU768457A1 (en) | 1976-01-04 | 1980-10-07 | Всесоюзный научно-исследовательский и проектно-конструкторский институт добычи угля гидравлическим способом | Catalyst for removing nitrogen oxides from exhaust gases |
JPS5838296A (en) | 1981-08-31 | 1983-03-05 | Ichiro Kijima | Novel antimony compound |
US4948623A (en) * | 1987-06-30 | 1990-08-14 | International Business Machines Corporation | Method of chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl/metal complex |
US4962214A (en) * | 1988-05-11 | 1990-10-09 | Massachusettes Institute Of Technology | Catalytic enantioselective addition of hydrocarbon equivalents to alpha, beta-unsaturated carbonyl compounds |
US4927670A (en) * | 1988-06-22 | 1990-05-22 | Georgia Tech Research Corporation | Chemical vapor deposition of mixed metal oxide coatings |
US4960916A (en) * | 1989-09-29 | 1990-10-02 | United States Of America As Represented By The Secretary Of The Navy | Organometallic antimony compounds useful in chemical vapor deposition processes |
US5453494A (en) * | 1990-07-06 | 1995-09-26 | Advanced Technology Materials, Inc. | Metal complex source reagents for MOCVD |
US5296716A (en) | 1991-01-18 | 1994-03-22 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom |
US5596522A (en) | 1991-01-18 | 1997-01-21 | Energy Conversion Devices, Inc. | Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements |
US5312983A (en) | 1991-02-15 | 1994-05-17 | Advanced Technology Materials, Inc. | Organometallic tellurium compounds useful in chemical vapor deposition processes |
JP3336034B2 (en) | 1992-05-12 | 2002-10-21 | 同和鉱業株式会社 | Manufacturing method of sputtering target |
US5997642A (en) | 1996-05-21 | 1999-12-07 | Symetrix Corporation | Method and apparatus for misted deposition of integrated circuit quality thin films |
US5972743A (en) | 1996-12-03 | 1999-10-26 | Advanced Technology Materials, Inc. | Precursor compositions for ion implantation of antimony and ion implantation process utilizing same |
US6005127A (en) | 1997-11-24 | 1999-12-21 | Advanced Technology Materials, Inc. | Antimony/Lewis base adducts for Sb-ion implantation and formation of antimonide films |
US6146608A (en) | 1997-11-24 | 2000-11-14 | Advanced Technology Materials, Inc. | Stable hydride source compositions for manufacture of semiconductor devices and structures |
US6787186B1 (en) * | 1997-12-18 | 2004-09-07 | Advanced Technology Materials, Inc. | Method of controlled chemical vapor deposition of a metal oxide ceramic layer |
US7098163B2 (en) * | 1998-08-27 | 2006-08-29 | Cabot Corporation | Method of producing membrane electrode assemblies for use in proton exchange membrane and direct methanol fuel cells |
US6123993A (en) | 1998-09-21 | 2000-09-26 | Advanced Technology Materials, Inc. | Method and apparatus for forming low dielectric constant polymeric films |
US6086779A (en) | 1999-03-01 | 2000-07-11 | Mcgean-Rohco, Inc. | Copper etching compositions and method for etching copper |
US6750079B2 (en) * | 1999-03-25 | 2004-06-15 | Ovonyx, Inc. | Method for making programmable resistance memory element |
US6281022B1 (en) | 1999-04-28 | 2001-08-28 | Sharp Laboratories Of America, Inc. | Multi-phase lead germanate film deposition method |
JP2001067720A (en) | 1999-08-31 | 2001-03-16 | Toray Ind Inc | Optical recording medium |
US6269979B1 (en) | 1999-10-05 | 2001-08-07 | Charles Dumont | Multi-compartmented mixing dispenser |
GB0004852D0 (en) * | 2000-02-29 | 2000-04-19 | Unilever Plc | Ligand and complex for catalytically bleaching a substrate |
US20020013487A1 (en) | 2000-04-03 | 2002-01-31 | Norman John Anthony Thomas | Volatile precursors for deposition of metals and metal-containing films |
US6984591B1 (en) * | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
JP4621333B2 (en) * | 2000-06-01 | 2011-01-26 | ホーチキ株式会社 | Thin film formation method |
US20020090815A1 (en) * | 2000-10-31 | 2002-07-11 | Atsushi Koike | Method for forming a deposited film by plasma chemical vapor deposition |
US7087482B2 (en) | 2001-01-19 | 2006-08-08 | Samsung Electronics Co., Ltd. | Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same |
JP2002220658A (en) | 2001-01-26 | 2002-08-09 | Ricoh Co Ltd | Sputtering target for optical disk and manufacturing method therefor |
EP1421607A2 (en) * | 2001-02-12 | 2004-05-26 | ASM America, Inc. | Improved process for deposition of semiconductor films |
US7005392B2 (en) | 2001-03-30 | 2006-02-28 | Advanced Technology Materials, Inc. | Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same |
US8618595B2 (en) | 2001-07-02 | 2013-12-31 | Merck Patent Gmbh | Applications of light-emitting nanoparticles |
US6507061B1 (en) * | 2001-08-31 | 2003-01-14 | Intel Corporation | Multiple layer phase-change memory |
ATE340800T1 (en) | 2001-10-26 | 2006-10-15 | Epichem Ltd | PRECURSOR COMPOUNDS FOR CHEMICAL VAPOR DEPOSITION |
US6972430B2 (en) | 2002-02-20 | 2005-12-06 | Stmicroelectronics S.R.L. | Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof |
EP1558312B1 (en) * | 2002-06-28 | 2017-08-09 | The Research Foundation of the State University of New York | Therapeutic agent delivery device and method |
US6872963B2 (en) * | 2002-08-08 | 2005-03-29 | Ovonyx, Inc. | Programmable resistance memory element with layered memory material |
US20060178019A1 (en) * | 2002-08-18 | 2006-08-10 | Aviza Technology, Inc. | Low temperature deposition of silicon oxides and oxynitrides |
KR102220703B1 (en) * | 2002-11-15 | 2021-02-26 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | Atomic Layer Deposition Using Metal Amidinates |
US6861559B2 (en) | 2002-12-10 | 2005-03-01 | Board Of Trustees Of Michigan State University | Iminoamines and preparation thereof |
US7425735B2 (en) * | 2003-02-24 | 2008-09-16 | Samsung Electronics Co., Ltd. | Multi-layer phase-changeable memory devices |
US7115927B2 (en) * | 2003-02-24 | 2006-10-03 | Samsung Electronics Co., Ltd. | Phase changeable memory devices |
US7402851B2 (en) * | 2003-02-24 | 2008-07-22 | Samsung Electronics Co., Ltd. | Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same |
JP4714422B2 (en) * | 2003-04-05 | 2011-06-29 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Method for depositing germanium-containing film and vapor delivery device |
US20040215030A1 (en) | 2003-04-22 | 2004-10-28 | Norman John Anthony Thomas | Precursors for metal containing films |
US7893419B2 (en) * | 2003-08-04 | 2011-02-22 | Intel Corporation | Processing phase change material to improve programming speed |
US7029978B2 (en) * | 2003-08-04 | 2006-04-18 | Intel Corporation | Controlling the location of conduction breakdown in phase change memories |
US20050082624A1 (en) * | 2003-10-20 | 2005-04-21 | Evgeni Gousev | Germanate gate dielectrics for semiconductor devices |
KR100577909B1 (en) | 2003-11-20 | 2006-05-10 | 주식회사 에버테크 | Universal thin film deposit device |
JP4982355B2 (en) | 2004-02-27 | 2012-07-25 | エーエスエム アメリカ インコーポレイテッド | Method for forming germanium film |
US7005665B2 (en) * | 2004-03-18 | 2006-02-28 | International Business Machines Corporation | Phase change memory cell on silicon-on insulator substrate |
US7312165B2 (en) * | 2004-05-05 | 2007-12-25 | Jursich Gregory M | Codeposition of hafnium-germanium oxides on substrates used in or for semiconductor devices |
US7166732B2 (en) | 2004-06-16 | 2007-01-23 | Advanced Technology Materials, Inc. | Copper (I) compounds useful as deposition precursors of copper thin films |
WO2006012052A2 (en) | 2004-06-25 | 2006-02-02 | Arkema, Inc. | Amidinate ligand containing chemical vapor deposition precursors |
US20050287747A1 (en) * | 2004-06-29 | 2005-12-29 | International Business Machines Corporation | Doped nitride film, doped oxide film and other doped films |
KR100639206B1 (en) | 2004-06-30 | 2006-10-30 | 주식회사 하이닉스반도체 | Phase-change memory device and method for manufacturing the same |
KR100642635B1 (en) * | 2004-07-06 | 2006-11-10 | 삼성전자주식회사 | Semiconductor integrated circuit devices having a hybrid dielectric layer and methods of fabricating the same |
KR100632948B1 (en) * | 2004-08-06 | 2006-10-11 | 삼성전자주식회사 | Sputtering method for forming a chalcogen compound and method for fabricating phase-changeable memory device using the same |
US7300873B2 (en) * | 2004-08-13 | 2007-11-27 | Micron Technology, Inc. | Systems and methods for forming metal-containing layers using vapor deposition processes |
US7250367B2 (en) | 2004-09-01 | 2007-07-31 | Micron Technology, Inc. | Deposition methods using heteroleptic precursors |
KR100652378B1 (en) | 2004-09-08 | 2006-12-01 | 삼성전자주식회사 | Sb Precursor and Manufacturing Method of Phase-Change Memory Device using the Same |
US7390360B2 (en) * | 2004-10-05 | 2008-06-24 | Rohm And Haas Electronic Materials Llc | Organometallic compounds |
JP2006124262A (en) | 2004-11-01 | 2006-05-18 | Dainippon Printing Co Ltd | InSb NANOPARTICLE |
JP2006156886A (en) | 2004-12-01 | 2006-06-15 | Renesas Technology Corp | Semiconductor integrated circuit device and manufacturing method therefor |
KR100640620B1 (en) | 2004-12-27 | 2006-11-02 | 삼성전자주식회사 | NOR type flash memory device having twin bit cell scheme |
KR100618879B1 (en) * | 2004-12-27 | 2006-09-01 | 삼성전자주식회사 | A Ge precursor, a thin layer prepared by using the Ge precursor, a method for preparing the thin layer and a phase-change memory device |
US20060172067A1 (en) * | 2005-01-28 | 2006-08-03 | Energy Conversion Devices, Inc | Chemical vapor deposition of chalcogenide materials |
US20080286446A1 (en) | 2005-01-28 | 2008-11-20 | Smuruthi Kamepalli | Seed-Assisted MOCVD Growth of Threshold Switching and Phase-Change Materials |
KR100585175B1 (en) * | 2005-01-31 | 2006-05-30 | 삼성전자주식회사 | Fabrication method of gesbte thin film by chemical vapor deposition process |
KR100688532B1 (en) * | 2005-02-14 | 2007-03-02 | 삼성전자주식회사 | A Te precursor, a Te-including chalcogenide thin layer prepared by using the Te precursor, a method for preparing the thin layer and a phase-change memory device |
US7399666B2 (en) | 2005-02-15 | 2008-07-15 | Micron Technology, Inc. | Atomic layer deposition of Zr3N4/ZrO2 films as gate dielectrics |
US7488967B2 (en) | 2005-04-06 | 2009-02-10 | International Business Machines Corporation | Structure for confining the switching current in phase memory (PCM) cells |
EP1710324B1 (en) | 2005-04-08 | 2008-12-03 | STMicroelectronics S.r.l. | PVD process and chamber for the pulsed deposition of a chalcogenide material layer of a phase change memory device |
JP2007019305A (en) | 2005-07-08 | 2007-01-25 | Elpida Memory Inc | Semiconductor storage device |
KR100681266B1 (en) | 2005-07-25 | 2007-02-09 | 삼성전자주식회사 | Method of manufacturing a variable resistance and method of manufacturing a phase changeable memory device using the same |
US7525117B2 (en) | 2005-08-09 | 2009-04-28 | Ovonyx, Inc. | Chalcogenide devices and materials having reduced germanium or telluruim content |
KR100962623B1 (en) * | 2005-09-03 | 2010-06-11 | 삼성전자주식회사 | Method of forming a phase changeable material layer, and methods of manufacturing a phase changeable memory unit and a phase changeable memory device using the same |
US7397060B2 (en) | 2005-11-14 | 2008-07-08 | Macronix International Co., Ltd. | Pipe shaped phase change memory |
KR100675289B1 (en) | 2005-11-14 | 2007-01-29 | 삼성전자주식회사 | Phase changeable memory cell array region and methods of forming the same |
US7459717B2 (en) | 2005-11-28 | 2008-12-02 | Macronix International Co., Ltd. | Phase change memory cell and manufacturing method |
WO2007067604A2 (en) | 2005-12-06 | 2007-06-14 | Structured Materials Inc. | Method of making undoped, alloyed and doped chalcogenide films by mocvd processes |
US20070154637A1 (en) * | 2005-12-19 | 2007-07-05 | Rohm And Haas Electronic Materials Llc | Organometallic composition |
KR100695168B1 (en) | 2006-01-10 | 2007-03-14 | 삼성전자주식회사 | Method of forming phase change material thin film, and method of manufacturing phase change memory device using the same |
US7812334B2 (en) | 2006-04-04 | 2010-10-12 | Micron Technology, Inc. | Phase change memory elements using self-aligned phase change material layers and methods of making and using same |
US7514705B2 (en) | 2006-04-25 | 2009-04-07 | International Business Machines Corporation | Phase change memory cell with limited switchable volume |
EP2302094A1 (en) | 2006-05-12 | 2011-03-30 | Advanced Technology Materials, Inc. | Low temperature deposition of phase change memory materials |
JP5145217B2 (en) | 2006-05-31 | 2013-02-13 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
CN101460657A (en) | 2006-06-02 | 2009-06-17 | 乔治洛德方法研究和开发液化空气有限公司 | Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing |
WO2008002546A1 (en) | 2006-06-28 | 2008-01-03 | President And Fellows Of Harvard College | Metal(iv) tetra-amidinate compounds and their use in vapor deposition |
US7638645B2 (en) * | 2006-06-28 | 2009-12-29 | President And Fellows Of Harvard University | Metal (IV) tetra-amidinate compounds and their use in vapor deposition |
KR100757415B1 (en) * | 2006-07-13 | 2007-09-10 | 삼성전자주식회사 | Germanium compound, method for fabricating thereof, phase-change memory device using the same and method for forming thereof |
KR100780865B1 (en) | 2006-07-19 | 2007-11-30 | 삼성전자주식회사 | Methods of forming a semiconductor device including a phase-change layer |
KR100791477B1 (en) | 2006-08-08 | 2008-01-03 | 삼성전자주식회사 | A phase-change memory unit, method of manufacturing the phase-change memory unit, a phase-change memory device having the phase-change memory unit and method of manufacturing the phase-change memory device |
TWI305678B (en) * | 2006-08-14 | 2009-01-21 | Ind Tech Res Inst | Phase-change memory and fabricating method thereof |
KR100766504B1 (en) * | 2006-09-29 | 2007-10-15 | 삼성전자주식회사 | Semiconductor device and method of fabricating the same |
US20080090400A1 (en) | 2006-10-17 | 2008-04-17 | Cheek Roger W | Self-aligned in-contact phase change memory device |
KR101263822B1 (en) | 2006-10-20 | 2013-05-13 | 삼성전자주식회사 | Method of manufacturing phase change memory device and method of forming phase change layer applied in the same |
US8106376B2 (en) | 2006-10-24 | 2012-01-31 | Macronix International Co., Ltd. | Method for manufacturing a resistor random access memory with a self-aligned air gap insulator |
KR20120118060A (en) | 2006-11-02 | 2012-10-25 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Antimony and germanium complexes useful for cvd/ald of metal thin films |
US7976634B2 (en) * | 2006-11-21 | 2011-07-12 | Applied Materials, Inc. | Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems |
KR101275799B1 (en) | 2006-11-21 | 2013-06-18 | 삼성전자주식회사 | Method of forming phase change layer using Ge precursor for low temperature deposition and method of manufacturing phase change memory device using the same |
WO2008069821A1 (en) | 2006-12-05 | 2008-06-12 | Advanced Technology Materials, Inc. | Metal aminotroponiminates, bis-oxazolinates and guanidinates |
KR100932904B1 (en) | 2006-12-05 | 2009-12-21 | 한국전자통신연구원 | Modem performance analysis device and method, and function test method of modem performance analysis device |
KR20080055508A (en) | 2006-12-15 | 2008-06-19 | 삼성전자주식회사 | Phase change layer having different crystal lattice in single layer and method of forming the same and phase change memory device comprising means for preventing ti diffusion and method of manufacturing the same |
US7750173B2 (en) | 2007-01-18 | 2010-07-06 | Advanced Technology Materials, Inc. | Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films |
KR100896180B1 (en) | 2007-01-23 | 2009-05-12 | 삼성전자주식회사 | Phase change Random Access Memory comprising phase change material layer formed by selective growth method and method of manufacturing the same |
FR2913523B1 (en) | 2007-03-09 | 2009-06-05 | Commissariat Energie Atomique | MULTI-LEVEL DATA STORAGE DEVICE WITH PHASE CHANGE MATERIAL |
KR101797880B1 (en) * | 2007-04-09 | 2017-11-15 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | Cobalt nitride layers for copper interconnects and methods for forming them |
US20080254218A1 (en) | 2007-04-16 | 2008-10-16 | Air Products And Chemicals, Inc. | Metal Precursor Solutions For Chemical Vapor Deposition |
US8377341B2 (en) | 2007-04-24 | 2013-02-19 | Air Products And Chemicals, Inc. | Tellurium (Te) precursors for making phase change memory materials |
US20080272355A1 (en) | 2007-05-04 | 2008-11-06 | Samsung Electronics Co., Ltd. | Phase change memory device and method for forming the same |
TW200847399A (en) * | 2007-05-21 | 2008-12-01 | Ind Tech Res Inst | Phase change memory device and method of fabricating the same |
KR100888617B1 (en) | 2007-06-15 | 2009-03-17 | 삼성전자주식회사 | Phase Change Memory Device and Method of Forming the Same |
KR100905278B1 (en) * | 2007-07-19 | 2009-06-29 | 주식회사 아이피에스 | Apparatus, method for depositing thin film on wafer and method for gap-filling trench using the same |
US7863593B2 (en) | 2007-07-20 | 2011-01-04 | Qimonda Ag | Integrated circuit including force-filled resistivity changing material |
KR20090013419A (en) | 2007-08-01 | 2009-02-05 | 삼성전자주식회사 | Phase change memory devices and methods of forming the same |
KR101370275B1 (en) | 2007-08-21 | 2014-03-05 | 삼성전자주식회사 | Phase Change Random Access Memory and Manufacturing Method for the Same |
EP2186917B1 (en) | 2007-09-13 | 2021-04-21 | JX Nippon Mining & Metals Corporation | Method for producing sintered body, sintered body, sputtering target composed of the sintered body, and sputtering target-backing plate assembly |
US8454928B2 (en) | 2007-09-17 | 2013-06-04 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Tellurium precursors for GST deposition |
KR20090029488A (en) | 2007-09-18 | 2009-03-23 | 삼성전자주식회사 | Method of forming chalcogenide layer including te, and method of fabricating phase-change memory device |
US20090087561A1 (en) | 2007-09-28 | 2009-04-02 | Advanced Technology Materials, Inc. | Metal and metalloid silylamides, ketimates, tetraalkylguanidinates and dianionic guanidinates useful for cvd/ald of thin films |
KR101458953B1 (en) | 2007-10-11 | 2014-11-07 | 삼성전자주식회사 | Method of forming phase change material layer using Ge(Ⅱ) source, and method of fabricating phase change memory device |
SG178736A1 (en) | 2007-10-31 | 2012-03-29 | Advanced Tech Materials | Amorphous ge/te deposition process |
US7960205B2 (en) | 2007-11-27 | 2011-06-14 | Air Products And Chemicals, Inc. | Tellurium precursors for GST films in an ALD or CVD process |
US20090162973A1 (en) | 2007-12-21 | 2009-06-25 | Julien Gatineau | Germanium precursors for gst film deposition |
US8318252B2 (en) | 2008-01-28 | 2012-11-27 | Air Products And Chemicals, Inc. | Antimony precursors for GST films in ALD/CVD processes |
US20090215225A1 (en) | 2008-02-24 | 2009-08-27 | Advanced Technology Materials, Inc. | Tellurium compounds useful for deposition of tellurium containing materials |
US7935564B2 (en) | 2008-02-25 | 2011-05-03 | International Business Machines Corporation | Self-converging bottom electrode ring |
US7709325B2 (en) * | 2008-03-06 | 2010-05-04 | International Business Machines Corporation | Method of forming ring electrode |
US8674127B2 (en) | 2008-05-02 | 2014-03-18 | Advanced Technology Materials, Inc. | Antimony compounds useful for deposition of antimony-containing materials |
US20090275164A1 (en) | 2008-05-02 | 2009-11-05 | Advanced Technology Materials, Inc. | Bicyclic guanidinates and bridging diamides as cvd/ald precursors |
US8765223B2 (en) | 2008-05-08 | 2014-07-01 | Air Products And Chemicals, Inc. | Binary and ternary metal chalcogenide materials and method of making and using same |
JP2011522120A (en) | 2008-05-29 | 2011-07-28 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Tellurium precursors for film deposition |
WO2009152108A2 (en) | 2008-06-10 | 2009-12-17 | Advanced Technology Materials, Inc. | GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRISTALLINITY |
US8636845B2 (en) | 2008-06-25 | 2014-01-28 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Metal heterocyclic compounds for deposition of thin films |
US8168811B2 (en) | 2008-07-22 | 2012-05-01 | Advanced Technology Materials, Inc. | Precursors for CVD/ALD of metal-containing films |
US8124950B2 (en) | 2008-08-26 | 2012-02-28 | International Business Machines Corporation | Concentric phase change memory element |
US8330136B2 (en) | 2008-12-05 | 2012-12-11 | Advanced Technology Materials, Inc. | High concentration nitrogen-containing germanium telluride based memory devices and processes of making |
JP2010258249A (en) | 2009-04-27 | 2010-11-11 | Toshiba Corp | Phase-change memory device |
WO2010135702A2 (en) | 2009-05-22 | 2010-11-25 | Advanced Technology Materials, Inc. | Low temperature gst process |
US8410468B2 (en) | 2009-07-02 | 2013-04-02 | Advanced Technology Materials, Inc. | Hollow GST structure with dielectric fill |
JP2011066135A (en) | 2009-09-16 | 2011-03-31 | Elpida Memory Inc | Method for fabricating phase-change memory device |
US20110124182A1 (en) | 2009-11-20 | 2011-05-26 | Advanced Techology Materials, Inc. | System for the delivery of germanium-based precursor |
US8017433B2 (en) | 2010-02-09 | 2011-09-13 | International Business Machines Corporation | Post deposition method for regrowth of crystalline phase change material |
-
2007
- 2007-03-12 EP EP11150043A patent/EP2302094A1/en not_active Withdrawn
- 2007-03-12 WO PCT/US2007/063832 patent/WO2007133837A2/en active Search and Examination
- 2007-03-12 TW TW096108424A patent/TW200801222A/en unknown
- 2007-03-12 US US12/300,459 patent/US8288198B2/en not_active Expired - Fee Related
- 2007-03-12 CN CN200780023028.5A patent/CN101473382A/en active Pending
- 2007-03-12 KR KR1020087030213A patent/KR101499260B1/en not_active IP Right Cessation
- 2007-03-12 JP JP2009509899A patent/JP2009536986A/en not_active Withdrawn
- 2007-03-12 EP EP07758385A patent/EP2018642A4/en not_active Withdrawn
- 2007-03-12 SG SG201103398-2A patent/SG171683A1/en unknown
-
2012
- 2012-09-12 US US13/610,928 patent/US8679894B2/en not_active Expired - Fee Related
-
2014
- 2014-03-24 US US14/223,500 patent/US8877549B2/en not_active Expired - Fee Related
Non-Patent Citations (1)
Title |
---|
See references of EP2018642A4 * |
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Publication number | Priority date | Publication date | Assignee | Title |
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Also Published As
Publication number | Publication date |
---|---|
JP2009536986A (en) | 2009-10-22 |
US8679894B2 (en) | 2014-03-25 |
US20140206134A1 (en) | 2014-07-24 |
US20090124039A1 (en) | 2009-05-14 |
WO2007133837A3 (en) | 2008-03-13 |
TW200801222A (en) | 2008-01-01 |
KR101499260B1 (en) | 2015-03-05 |
SG171683A1 (en) | 2011-06-29 |
EP2302094A1 (en) | 2011-03-30 |
US8877549B2 (en) | 2014-11-04 |
US8288198B2 (en) | 2012-10-16 |
CN101473382A (en) | 2009-07-01 |
EP2018642A4 (en) | 2009-05-27 |
EP2018642A2 (en) | 2009-01-28 |
KR20090018629A (en) | 2009-02-20 |
US20130005078A1 (en) | 2013-01-03 |
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