SU768457A1 - Catalyst for removing nitrogen oxides from exhaust gases - Google Patents
Catalyst for removing nitrogen oxides from exhaust gases Download PDFInfo
- Publication number
- SU768457A1 SU768457A1 SU762306920A SU2306920A SU768457A1 SU 768457 A1 SU768457 A1 SU 768457A1 SU 762306920 A SU762306920 A SU 762306920A SU 2306920 A SU2306920 A SU 2306920A SU 768457 A1 SU768457 A1 SU 768457A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- catalyst
- exhaust gases
- nitrogen oxides
- removing nitrogen
- oxides
- Prior art date
Links
Description
створами солей ферроценов различной концентрации .pads of salts of ferrocenes of different concentrations.
Полученные результаты приведены в таблице.The results are shown in the table.
При использовании предложенного катализатора удаетс достигнуть высокой степени очистки выхлопных газов и изготовить меньшие по размерам поглотительные емкости.When using the proposed catalyst, it is possible to achieve a high degree of purification of exhaust gases and to manufacture smaller absorption tanks.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU762306920A SU768457A1 (en) | 1976-01-04 | 1976-01-04 | Catalyst for removing nitrogen oxides from exhaust gases |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU762306920A SU768457A1 (en) | 1976-01-04 | 1976-01-04 | Catalyst for removing nitrogen oxides from exhaust gases |
Publications (1)
Publication Number | Publication Date |
---|---|
SU768457A1 true SU768457A1 (en) | 1980-10-07 |
Family
ID=20643137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU762306920A SU768457A1 (en) | 1976-01-04 | 1976-01-04 | Catalyst for removing nitrogen oxides from exhaust gases |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU768457A1 (en) |
Cited By (20)
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---|---|---|---|---|
US7964746B2 (en) * | 2007-03-30 | 2011-06-21 | Advanced Technology Materials, Inc. | Copper precursors for CVD/ALD/digital CVD of copper metal films |
US8034407B2 (en) | 2004-02-23 | 2011-10-11 | Advanced Technology Materials, Inc. | Chemical vapor deposition of high conductivity, adherent thin films of ruthenium |
US8093140B2 (en) | 2007-10-31 | 2012-01-10 | Advanced Technology Materials, Inc. | Amorphous Ge/Te deposition process |
US8206784B2 (en) | 2006-03-10 | 2012-06-26 | Advanced Technology Materials, Inc. | Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films |
US8268665B2 (en) | 2006-11-02 | 2012-09-18 | Advanced Technology Materials, Inc. | Antimony and germanium complexes useful for CVD/ALD of metal thin films |
US8288198B2 (en) | 2006-05-12 | 2012-10-16 | Advanced Technology Materials, Inc. | Low temperature deposition of phase change memory materials |
US8330136B2 (en) | 2008-12-05 | 2012-12-11 | Advanced Technology Materials, Inc. | High concentration nitrogen-containing germanium telluride based memory devices and processes of making |
US8455049B2 (en) | 2007-08-08 | 2013-06-04 | Advanced Technology Materials, Inc. | Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition |
US8524931B2 (en) | 2007-01-17 | 2013-09-03 | Advanced Technology Materials, Inc. | Precursor compositions for ALD/CVD of group II ruthenate thin films |
US8574675B2 (en) | 2009-03-17 | 2013-11-05 | Advanced Technology Materials, Inc. | Method and composition for depositing ruthenium with assistive metal species |
US8663735B2 (en) | 2009-02-13 | 2014-03-04 | Advanced Technology Materials, Inc. | In situ generation of RuO4 for ALD of Ru and Ru related materials |
US8834968B2 (en) | 2007-10-11 | 2014-09-16 | Samsung Electronics Co., Ltd. | Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device |
US8852686B2 (en) | 2007-10-11 | 2014-10-07 | Samsung Electronics Co., Ltd. | Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device |
US9012876B2 (en) | 2010-03-26 | 2015-04-21 | Entegris, Inc. | Germanium antimony telluride materials and devices incorporating same |
US9190609B2 (en) | 2010-05-21 | 2015-11-17 | Entegris, Inc. | Germanium antimony telluride materials and devices incorporating same |
US9373677B2 (en) | 2010-07-07 | 2016-06-21 | Entegris, Inc. | Doping of ZrO2 for DRAM applications |
US9443736B2 (en) | 2012-05-25 | 2016-09-13 | Entegris, Inc. | Silylene compositions and methods of use thereof |
US9537095B2 (en) | 2008-02-24 | 2017-01-03 | Entegris, Inc. | Tellurium compounds useful for deposition of tellurium containing materials |
US9640757B2 (en) | 2012-10-30 | 2017-05-02 | Entegris, Inc. | Double self-aligned phase change memory device structure |
US10186570B2 (en) | 2013-02-08 | 2019-01-22 | Entegris, Inc. | ALD processes for low leakage current and low equivalent oxide thickness BiTaO films |
-
1976
- 1976-01-04 SU SU762306920A patent/SU768457A1/en active
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8034407B2 (en) | 2004-02-23 | 2011-10-11 | Advanced Technology Materials, Inc. | Chemical vapor deposition of high conductivity, adherent thin films of ruthenium |
US8241704B2 (en) | 2004-02-23 | 2012-08-14 | Advanced Technology Materials, Inc. | Chemical vapor deposition of high conductivity, adherent thin films of ruthenium |
US8784936B2 (en) | 2006-03-10 | 2014-07-22 | Advanced Technology Materials, Inc. | Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films |
US9534285B2 (en) | 2006-03-10 | 2017-01-03 | Entegris, Inc. | Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films |
US8206784B2 (en) | 2006-03-10 | 2012-06-26 | Advanced Technology Materials, Inc. | Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films |
US8679894B2 (en) | 2006-05-12 | 2014-03-25 | Advanced Technology Materials, Inc. | Low temperature deposition of phase change memory materials |
US8288198B2 (en) | 2006-05-12 | 2012-10-16 | Advanced Technology Materials, Inc. | Low temperature deposition of phase change memory materials |
US9219232B2 (en) | 2006-11-02 | 2015-12-22 | Entegris, Inc. | Antimony and germanium complexes useful for CVD/ALD of metal thin films |
US8709863B2 (en) | 2006-11-02 | 2014-04-29 | Advanced Technology Materials, Inc. | Antimony and germanium complexes useful for CVD/ALD of metal thin films |
US8268665B2 (en) | 2006-11-02 | 2012-09-18 | Advanced Technology Materials, Inc. | Antimony and germanium complexes useful for CVD/ALD of metal thin films |
US8524931B2 (en) | 2007-01-17 | 2013-09-03 | Advanced Technology Materials, Inc. | Precursor compositions for ALD/CVD of group II ruthenate thin films |
US7964746B2 (en) * | 2007-03-30 | 2011-06-21 | Advanced Technology Materials, Inc. | Copper precursors for CVD/ALD/digital CVD of copper metal films |
US8455049B2 (en) | 2007-08-08 | 2013-06-04 | Advanced Technology Materials, Inc. | Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition |
US8834968B2 (en) | 2007-10-11 | 2014-09-16 | Samsung Electronics Co., Ltd. | Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device |
US8852686B2 (en) | 2007-10-11 | 2014-10-07 | Samsung Electronics Co., Ltd. | Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device |
US8093140B2 (en) | 2007-10-31 | 2012-01-10 | Advanced Technology Materials, Inc. | Amorphous Ge/Te deposition process |
US9537095B2 (en) | 2008-02-24 | 2017-01-03 | Entegris, Inc. | Tellurium compounds useful for deposition of tellurium containing materials |
US8330136B2 (en) | 2008-12-05 | 2012-12-11 | Advanced Technology Materials, Inc. | High concentration nitrogen-containing germanium telluride based memory devices and processes of making |
US8663735B2 (en) | 2009-02-13 | 2014-03-04 | Advanced Technology Materials, Inc. | In situ generation of RuO4 for ALD of Ru and Ru related materials |
US8574675B2 (en) | 2009-03-17 | 2013-11-05 | Advanced Technology Materials, Inc. | Method and composition for depositing ruthenium with assistive metal species |
US9012876B2 (en) | 2010-03-26 | 2015-04-21 | Entegris, Inc. | Germanium antimony telluride materials and devices incorporating same |
US9190609B2 (en) | 2010-05-21 | 2015-11-17 | Entegris, Inc. | Germanium antimony telluride materials and devices incorporating same |
US9373677B2 (en) | 2010-07-07 | 2016-06-21 | Entegris, Inc. | Doping of ZrO2 for DRAM applications |
US9443736B2 (en) | 2012-05-25 | 2016-09-13 | Entegris, Inc. | Silylene compositions and methods of use thereof |
US9640757B2 (en) | 2012-10-30 | 2017-05-02 | Entegris, Inc. | Double self-aligned phase change memory device structure |
US10186570B2 (en) | 2013-02-08 | 2019-01-22 | Entegris, Inc. | ALD processes for low leakage current and low equivalent oxide thickness BiTaO films |
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