SU768457A1 - Catalyst for removing nitrogen oxides from exhaust gases - Google Patents

Catalyst for removing nitrogen oxides from exhaust gases Download PDF

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Publication number
SU768457A1
SU768457A1 SU762306920A SU2306920A SU768457A1 SU 768457 A1 SU768457 A1 SU 768457A1 SU 762306920 A SU762306920 A SU 762306920A SU 2306920 A SU2306920 A SU 2306920A SU 768457 A1 SU768457 A1 SU 768457A1
Authority
SU
USSR - Soviet Union
Prior art keywords
catalyst
exhaust gases
nitrogen oxides
removing nitrogen
oxides
Prior art date
Application number
SU762306920A
Other languages
Russian (ru)
Inventor
Ангелина Ильинична Коваленко
Иван Андреевич Лобов
Original Assignee
Всесоюзный научно-исследовательский и проектно-конструкторский институт добычи угля гидравлическим способом
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Application filed by Всесоюзный научно-исследовательский и проектно-конструкторский институт добычи угля гидравлическим способом filed Critical Всесоюзный научно-исследовательский и проектно-конструкторский институт добычи угля гидравлическим способом
Priority to SU762306920A priority Critical patent/SU768457A1/en
Application granted granted Critical
Publication of SU768457A1 publication Critical patent/SU768457A1/en

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Description

створами солей ферроценов различной концентрации .pads of salts of ferrocenes of different concentrations.

Полученные результаты приведены в таблице.The results are shown in the table.

При использовании предложенного катализатора удаетс  достигнуть высокой степени очистки выхлопных газов и изготовить меньшие по размерам поглотительные емкости.When using the proposed catalyst, it is possible to achieve a high degree of purification of exhaust gases and to manufacture smaller absorption tanks.

Claims (2)

1. За вка Великобритании № 1364378, кл. В 1 Е, 1973.1. For the UK of UK number 1364378, cl. In 1E, 1973. 2. Патент США № 3271324, кл. 252- 466, опублик. 1966 (прототип).2. US patent No. 3271324, cl. 252- 466, published. 1966 (prototype).
SU762306920A 1976-01-04 1976-01-04 Catalyst for removing nitrogen oxides from exhaust gases SU768457A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU762306920A SU768457A1 (en) 1976-01-04 1976-01-04 Catalyst for removing nitrogen oxides from exhaust gases

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU762306920A SU768457A1 (en) 1976-01-04 1976-01-04 Catalyst for removing nitrogen oxides from exhaust gases

Publications (1)

Publication Number Publication Date
SU768457A1 true SU768457A1 (en) 1980-10-07

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Family Applications (1)

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SU762306920A SU768457A1 (en) 1976-01-04 1976-01-04 Catalyst for removing nitrogen oxides from exhaust gases

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SU (1) SU768457A1 (en)

Cited By (20)

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US7964746B2 (en) * 2007-03-30 2011-06-21 Advanced Technology Materials, Inc. Copper precursors for CVD/ALD/digital CVD of copper metal films
US8034407B2 (en) 2004-02-23 2011-10-11 Advanced Technology Materials, Inc. Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
US8093140B2 (en) 2007-10-31 2012-01-10 Advanced Technology Materials, Inc. Amorphous Ge/Te deposition process
US8206784B2 (en) 2006-03-10 2012-06-26 Advanced Technology Materials, Inc. Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films
US8268665B2 (en) 2006-11-02 2012-09-18 Advanced Technology Materials, Inc. Antimony and germanium complexes useful for CVD/ALD of metal thin films
US8288198B2 (en) 2006-05-12 2012-10-16 Advanced Technology Materials, Inc. Low temperature deposition of phase change memory materials
US8330136B2 (en) 2008-12-05 2012-12-11 Advanced Technology Materials, Inc. High concentration nitrogen-containing germanium telluride based memory devices and processes of making
US8455049B2 (en) 2007-08-08 2013-06-04 Advanced Technology Materials, Inc. Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition
US8524931B2 (en) 2007-01-17 2013-09-03 Advanced Technology Materials, Inc. Precursor compositions for ALD/CVD of group II ruthenate thin films
US8574675B2 (en) 2009-03-17 2013-11-05 Advanced Technology Materials, Inc. Method and composition for depositing ruthenium with assistive metal species
US8663735B2 (en) 2009-02-13 2014-03-04 Advanced Technology Materials, Inc. In situ generation of RuO4 for ALD of Ru and Ru related materials
US8834968B2 (en) 2007-10-11 2014-09-16 Samsung Electronics Co., Ltd. Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
US8852686B2 (en) 2007-10-11 2014-10-07 Samsung Electronics Co., Ltd. Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
US9012876B2 (en) 2010-03-26 2015-04-21 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
US9190609B2 (en) 2010-05-21 2015-11-17 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
US9373677B2 (en) 2010-07-07 2016-06-21 Entegris, Inc. Doping of ZrO2 for DRAM applications
US9443736B2 (en) 2012-05-25 2016-09-13 Entegris, Inc. Silylene compositions and methods of use thereof
US9537095B2 (en) 2008-02-24 2017-01-03 Entegris, Inc. Tellurium compounds useful for deposition of tellurium containing materials
US9640757B2 (en) 2012-10-30 2017-05-02 Entegris, Inc. Double self-aligned phase change memory device structure
US10186570B2 (en) 2013-02-08 2019-01-22 Entegris, Inc. ALD processes for low leakage current and low equivalent oxide thickness BiTaO films

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8034407B2 (en) 2004-02-23 2011-10-11 Advanced Technology Materials, Inc. Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
US8241704B2 (en) 2004-02-23 2012-08-14 Advanced Technology Materials, Inc. Chemical vapor deposition of high conductivity, adherent thin films of ruthenium
US8784936B2 (en) 2006-03-10 2014-07-22 Advanced Technology Materials, Inc. Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films
US9534285B2 (en) 2006-03-10 2017-01-03 Entegris, Inc. Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films
US8206784B2 (en) 2006-03-10 2012-06-26 Advanced Technology Materials, Inc. Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films
US8679894B2 (en) 2006-05-12 2014-03-25 Advanced Technology Materials, Inc. Low temperature deposition of phase change memory materials
US8288198B2 (en) 2006-05-12 2012-10-16 Advanced Technology Materials, Inc. Low temperature deposition of phase change memory materials
US9219232B2 (en) 2006-11-02 2015-12-22 Entegris, Inc. Antimony and germanium complexes useful for CVD/ALD of metal thin films
US8709863B2 (en) 2006-11-02 2014-04-29 Advanced Technology Materials, Inc. Antimony and germanium complexes useful for CVD/ALD of metal thin films
US8268665B2 (en) 2006-11-02 2012-09-18 Advanced Technology Materials, Inc. Antimony and germanium complexes useful for CVD/ALD of metal thin films
US8524931B2 (en) 2007-01-17 2013-09-03 Advanced Technology Materials, Inc. Precursor compositions for ALD/CVD of group II ruthenate thin films
US7964746B2 (en) * 2007-03-30 2011-06-21 Advanced Technology Materials, Inc. Copper precursors for CVD/ALD/digital CVD of copper metal films
US8455049B2 (en) 2007-08-08 2013-06-04 Advanced Technology Materials, Inc. Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition
US8834968B2 (en) 2007-10-11 2014-09-16 Samsung Electronics Co., Ltd. Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
US8852686B2 (en) 2007-10-11 2014-10-07 Samsung Electronics Co., Ltd. Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
US8093140B2 (en) 2007-10-31 2012-01-10 Advanced Technology Materials, Inc. Amorphous Ge/Te deposition process
US9537095B2 (en) 2008-02-24 2017-01-03 Entegris, Inc. Tellurium compounds useful for deposition of tellurium containing materials
US8330136B2 (en) 2008-12-05 2012-12-11 Advanced Technology Materials, Inc. High concentration nitrogen-containing germanium telluride based memory devices and processes of making
US8663735B2 (en) 2009-02-13 2014-03-04 Advanced Technology Materials, Inc. In situ generation of RuO4 for ALD of Ru and Ru related materials
US8574675B2 (en) 2009-03-17 2013-11-05 Advanced Technology Materials, Inc. Method and composition for depositing ruthenium with assistive metal species
US9012876B2 (en) 2010-03-26 2015-04-21 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
US9190609B2 (en) 2010-05-21 2015-11-17 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
US9373677B2 (en) 2010-07-07 2016-06-21 Entegris, Inc. Doping of ZrO2 for DRAM applications
US9443736B2 (en) 2012-05-25 2016-09-13 Entegris, Inc. Silylene compositions and methods of use thereof
US9640757B2 (en) 2012-10-30 2017-05-02 Entegris, Inc. Double self-aligned phase change memory device structure
US10186570B2 (en) 2013-02-08 2019-01-22 Entegris, Inc. ALD processes for low leakage current and low equivalent oxide thickness BiTaO films

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