WO2007079077A3 - Germanium sur des structures en verre ou verre-ceramique - Google Patents

Germanium sur des structures en verre ou verre-ceramique Download PDF

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Publication number
WO2007079077A3
WO2007079077A3 PCT/US2006/049272 US2006049272W WO2007079077A3 WO 2007079077 A3 WO2007079077 A3 WO 2007079077A3 US 2006049272 W US2006049272 W US 2006049272W WO 2007079077 A3 WO2007079077 A3 WO 2007079077A3
Authority
WO
WIPO (PCT)
Prior art keywords
glass
germanium
ceramic structures
expansion
layer
Prior art date
Application number
PCT/US2006/049272
Other languages
English (en)
Other versions
WO2007079077A2 (fr
Inventor
Paul S Danielson
Matthew J Dejneka
Kishor P Gadkaree
Josef C Lapp
Linda R Pinckney
Original Assignee
Corning Inc
Paul S Danielson
Matthew J Dejneka
Kishor P Gadkaree
Josef C Lapp
Linda R Pinckney
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/415,732 external-priority patent/US7456057B2/en
Application filed by Corning Inc, Paul S Danielson, Matthew J Dejneka, Kishor P Gadkaree, Josef C Lapp, Linda R Pinckney filed Critical Corning Inc
Priority to CN2006800526472A priority Critical patent/CN101371348B/zh
Priority to EP06849096A priority patent/EP1974375A2/fr
Priority to JP2008549505A priority patent/JP2009528673A/ja
Publication of WO2007079077A2 publication Critical patent/WO2007079077A2/fr
Publication of WO2007079077A3 publication Critical patent/WO2007079077A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C03C3/068—Glass compositions containing silica with less than 40% silica by weight containing boron containing rare earths
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/095—Glass compositions containing silica with 40% to 90% silica, by weight containing rare earths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys

Abstract

La présente invention concerne une structure de semiconducteur sur isolant qui comprend une première couche et une seconde couche attachées l'une à l'autre directement ou par une ou plusieurs couches intermédiaires. La première couche inclut un semiconducteur fait pratiquement d'un seul cristal de germanium tandis que la seconde couche comprend une matière en verre ou en verre-céramique dont le coefficient de dilatation thermique linéique (25-300 °C) se trouve dans la plage de ± 20 x 10-7 / °C du coefficient de dilatation thermique linéique de la première couche de germanium.
PCT/US2006/049272 2006-01-03 2006-12-22 Germanium sur des structures en verre ou verre-ceramique WO2007079077A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2006800526472A CN101371348B (zh) 2006-01-03 2006-12-22 玻璃和玻璃-陶瓷上锗结构
EP06849096A EP1974375A2 (fr) 2006-01-03 2006-12-22 Germanium sur des structures en verre ou verre-ceramique
JP2008549505A JP2009528673A (ja) 2006-01-03 2006-12-22 ガラスおよびガラスセラミック上ゲルマニウム構造

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US75593406P 2006-01-03 2006-01-03
US60/755,934 2006-01-03
US11/415,732 US7456057B2 (en) 2005-12-31 2006-05-01 Germanium on glass and glass-ceramic structures
US11/415,732 2006-05-01

Publications (2)

Publication Number Publication Date
WO2007079077A2 WO2007079077A2 (fr) 2007-07-12
WO2007079077A3 true WO2007079077A3 (fr) 2007-12-13

Family

ID=38228811

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/049272 WO2007079077A2 (fr) 2006-01-03 2006-12-22 Germanium sur des structures en verre ou verre-ceramique

Country Status (5)

Country Link
EP (1) EP1974375A2 (fr)
JP (1) JP2009528673A (fr)
KR (1) KR20080092403A (fr)
CN (1) CN101371348B (fr)
WO (1) WO2007079077A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080070340A1 (en) * 2006-09-14 2008-03-20 Nicholas Francis Borrelli Image sensor using thin-film SOI
TWI437645B (zh) 2008-09-26 2014-05-11 Corning Inc 玻璃陶瓷為主的絕緣層上半導體之結構及其製法
US8341976B2 (en) 2009-02-19 2013-01-01 Corning Incorporated Method of separating strengthened glass
JP2012121757A (ja) * 2010-12-08 2012-06-28 Nippon Electric Glass Co Ltd 高屈折率ガラス
CN108658454A (zh) * 2018-07-31 2018-10-16 中南大学 一种低热膨胀系数无碱高铝硼硅酸盐玻璃及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0557588A2 (fr) * 1992-01-21 1993-09-01 Corning Incorporated Produit composite et son procédé de fabrication
US6319867B1 (en) * 1998-11-30 2001-11-20 Corning Incorporated Glasses for flat panel displays
US20040229444A1 (en) * 2003-02-18 2004-11-18 Couillard James G. Glass-based SOI structures
US6852652B1 (en) * 2003-09-29 2005-02-08 Sharp Laboratories Of America, Inc. Method of making relaxed silicon-germanium on glass via layer transfer
WO2007061563A1 (fr) * 2005-11-22 2007-05-31 Corning Incorporated Semi-conducteur à aire importante sur isolant en verre

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968857A (en) * 1997-03-31 1999-10-19 Corning Incorporated Glass-ceramics
JP4726399B2 (ja) * 2003-05-29 2011-07-20 コニカミノルタオプト株式会社 ガラス基板
JP4726400B2 (ja) * 2003-05-29 2011-07-20 コニカミノルタオプト株式会社 ガラス基板の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0557588A2 (fr) * 1992-01-21 1993-09-01 Corning Incorporated Produit composite et son procédé de fabrication
US6319867B1 (en) * 1998-11-30 2001-11-20 Corning Incorporated Glasses for flat panel displays
US20040229444A1 (en) * 2003-02-18 2004-11-18 Couillard James G. Glass-based SOI structures
US6852652B1 (en) * 2003-09-29 2005-02-08 Sharp Laboratories Of America, Inc. Method of making relaxed silicon-germanium on glass via layer transfer
WO2007061563A1 (fr) * 2005-11-22 2007-05-31 Corning Incorporated Semi-conducteur à aire importante sur isolant en verre

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JINGYUN HUANG ET AL.: "Calculation of the critical layer thickness considering thermal strain in Si1-xGex/Si strained-layer heterostructures.", JOURNAL OF APPLIED PHYSICS, vol. 83, no. 1, 1 January 1998 (1998-01-01), pages 171 - 173, XP002451934 *

Also Published As

Publication number Publication date
WO2007079077A2 (fr) 2007-07-12
CN101371348B (zh) 2011-11-16
JP2009528673A (ja) 2009-08-06
EP1974375A2 (fr) 2008-10-01
CN101371348A (zh) 2009-02-18
KR20080092403A (ko) 2008-10-15

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