WO2007077373A1 - Substrat transparent comportant un revetement antireflet - Google Patents
Substrat transparent comportant un revetement antireflet Download PDFInfo
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- WO2007077373A1 WO2007077373A1 PCT/FR2006/051288 FR2006051288W WO2007077373A1 WO 2007077373 A1 WO2007077373 A1 WO 2007077373A1 FR 2006051288 W FR2006051288 W FR 2006051288W WO 2007077373 A1 WO2007077373 A1 WO 2007077373A1
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- Prior art keywords
- substrate
- index
- layer
- glass
- stack
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 63
- 239000006117 anti-reflective coating Substances 0.000 title abstract 2
- 239000011521 glass Substances 0.000 claims abstract description 46
- 239000003989 dielectric material Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims description 22
- 239000011248 coating agent Substances 0.000 claims description 19
- 230000005540 biological transmission Effects 0.000 claims description 16
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 49
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000000295 emission spectrum Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- -1 SnO 2 Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 235000013980 iron oxide Nutrition 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- OANVFVBYPNXRLD-UHFFFAOYSA-M propyromazine bromide Chemical compound [Br-].C12=CC=CC=C2SC2=CC=CC=C2N1C(=O)C(C)[N+]1(C)CCCC1 OANVFVBYPNXRLD-UHFFFAOYSA-M 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- 238000010288 cold spraying Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- VBMVTYDPPZVILR-UHFFFAOYSA-N iron(2+);oxygen(2-) Chemical class [O-2].[Fe+2] VBMVTYDPPZVILR-UHFFFAOYSA-N 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/20—Optical components
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
- G02B5/282—Interference filters designed for the infrared light reflecting for infrared and transparent for visible light, e.g. heat reflectors, laser protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the invention relates to the use of a transparent substrate, in particular glass, provided on at least one of its faces with an antireflection coating.
- Antireflection coatings are usually made up, for the simplest, of a thin interferential layer whose refractive index is between that of the substrate and that of air, or, for the most complex, of a stack of thin layers. (In general, alternating layers based on dielectric material with high and low refractive indices).
- transparent substrates include solar cells (also called modules or solar collectors), for example silicon cells. These cells need to absorb the maximum of the solar energy they capture, in the visible, but also beyond, especially in the near infrared to maximize their quantum efficiency that characterizes their energy conversion efficiency. It has therefore appeared, to increase their efficiency, to optimize the transmission of solar energy through this glass in the wavelengths that are important for solar cells.
- solar cells also called modules or solar collectors
- silicon cells for example silicon cells.
- a first solution consisted in using extra-clear very low iron oxide (s) content.
- s very low iron oxide
- glasses for example, glasses marketed in the “DIAMANT” range or in the “ALBARINO” range by Saint-Gobain Glass France.
- a second solution was to provide the glass, on the outside, with an antireflection coating consisting of a porous silicon oxide monolayer, the porosity of the material making it possible to lower the refractive index.
- this one-layer coating is not very efficient. It also has a durability, particularly vis-à-vis moisture, insufficient.
- a third solution was to provide the glass, on the outside, with an antireflection coating, especially at least in the visible and in the near infrared, made of a stack (A) of thin layers of refractive index dielectric material. alternatively strong and weak, this antireflection coating has in addition to optimum optical performance in terms of increased light transmission, correct performance in terms of mechanical and chemical durability.
- the invention firstly relates to the use of a transparent substrate, in particular glass, comprising on at least one of its faces an antireflection coating (A) of dielectric material and which has a selectivity between the range of lengths of d visible wave including near-infrared and wavelength range including far-infrared.
- A antireflection coating
- a transparent substrate in particular a glass substrate, comprising on at least one of its faces an antireflection coating (A) made of dielectric material and whose selectivity allows a variation of the electrical parameters of the cell (I sc , V oc ),
- an anti-reflection coating made of a stack (A) of thin layers of dielectric material of alternately high and low refractive indices, the stack comprising successively:
- a first, high-index, refractive index layer between 1.85 and 2.15 and having a geometric thickness of between 10 and 30 nm
- a second low index layer having a refractive index n 2 of between 1.35 and 1.55 and a geometric thickness e 2 of between 20 and 40 nm,
- a high index third layer having a refractive index n 3 of between 1.85 and 2.15 and a geometric thickness e 3 of between 140 nm and 160 nm;
- a fourth layer with a low index, with a refractive index n 4 of between 1.35 and 1.55 and a geometric thickness e 4 between
- the first high-index layer and / or the third high-index layer are based on metal oxide (s) chosen from zinc oxide, tin oxide, oxide, of zirconium or the mixed oxide of zinc and tin, or based on nitride (s) chosen (s) from silicon nitride and / or aluminum nitride,
- the first high-index layer and / or the third high-index layer consist of a superposition of several high-index layers, in particular a superposition of two layers such as SnO 2 / Si 3 N 4 or Si 3 N 4 / Sn0 2 .
- the second low-index layer and / or the fourth low-index layer are based on silicon oxide, oxynitride and / or silicon oxycarbide or a mixed oxide of silicon and aluminum.
- said substrate is made of glass, clear or extra-clear, texture, and preferably tempered.
- the stack (A) comprises the sequence of the following layers: SnO 2 or Si 3 N 4 / SiO 2 / SnO 2 or Si 3 N 4 / SiO 2 or SiAlO - the substrate has an integrated transmission over a range of wavelengths between 400 and 1100 nm of at least 90%.
- the substrate as previously defined as transparent outer substrate of solar modules comprising a plurality of Si or CIS type solar cells.
- a solar module comprising a plurality of solar cells of Si, CIS, CdTe, a-Si, GaAs or GaInP type, which uses a substrate as previously defined.
- the solar module it has an increase in its efficiency, expressed in integrated current density, of at least 1, 1.5 or 2% compared to a module using an external substrate without the antireflection stack (A).
- the solar module comprises two glass substrates, the solar cells being arranged in the inter-glass in which a curable polymer has been cast.
- layer is understood to be either a single layer or a superposition of layers where each of them respects the indicated refractive index and the sum of their geometrical thicknesses also remains the value indicated for the layer in question.
- the layers are made of dielectric material, in particular of the oxide or nitride type, as will be detailed later. However, it is not excluded that at least one of them is modified so as to be at least a little conductive, for example by doping a metal oxide, this for example to possibly give the antireflection stack also a anti-static function.
- the invention is preferentially interested in substrates with a glass function, but can also be applied to transparent substrates based on polymer, for example polycarbonate or PC or poly (methyl methacrylate) or PMMA.
- polymer for example polycarbonate or PC or poly (methyl methacrylate) or PMMA.
- the invention therefore relates to a four-layer type antireflection stack. This is a good compromise because the number of layers is large enough that their interferential interaction can achieve a significant anti-reflection effect. However, this number remains reasonable enough to be able to manufacture the product on a large scale, on an industrial line, on large substrates, for example by using a vacuum deposition technique of the sputtering type (magnetic field assisted). .
- the criteria of thickness and refractive index retained in the invention make it possible to obtain a broadband antireflection effect, with a substantial increase in the transmission of the substrate-carrier, not only in the visible range but also in the beyond, especially in the infrared and more particularly in the near infrared. It is a powerful antireflection over a range of wavelengths extending at least between 400 and 1100 nm.
- a selective antireflection stack makes it possible to combine: in the domain covering the wavelengths of the visible and up to those of the near infra-red (typically from 300 to 1300 nm for a CIS-based cell) to obtain a high light transmission which guarantees a high energy conversion efficiency, this high transmission being reflected at the level of the cell by a variation of a characteristic parameter (l sc for Intensity Short Circuit ) which conditions precisely this conversion efficiency
- the inventors thus selected thicknesses for the layers of the stack different from the thicknesses usually chosen for conventional antireflection coatings intended to reduce the reflection only in the visible. In the present invention, this selection has been made so as to anti-reflect the substrate not only in the visible but also in the infra-red.
- the most suitable materials for constituting the first and / or the third layer are based on metal oxide (s) chosen from zinc oxide ZnO, tin SnO 2 , zirconium oxide ZrO 2 . It may especially be a mixed oxide of Zn and Sn, zinc stannate type. They may also be based on nitride (s) chosen from silicon nitride Si 3 N 4 and / or aluminum nitride AlN.
- a nitride layer for one or other of the high index layers in particular the third at least, makes it possible to add a feature to the stack, namely an ability to better withstand heat treatments without any noticeable deterioration of its optical properties.
- this is a feature that is important for the glasses that must be part of the solar cells, because these glasses must generally undergo a heat treatment at high temperature, quench type, where the glasses must be heated between 500 and 700 ° C It then becomes advantageous to be able to deposit the thin layers before the heat treatment without this being a problem, because it is simpler industrially to make the deposits before any heat treatment. It is thus possible to have a single antireflection stack configuration, whether or not the carrier glass is intended to undergo heat treatment.
- At least one nitride layer improves the mechanical and chemical durability of the stack as a whole. This is all the more important in applications to solar cells, constantly exposed to climatic hazards.
- the first and / or the third layer may in fact consist of several superimposed layers superimposed. It can especially be a bilayer of the SnO 2 / Si 3 N 4 or Si 3 N 4 / SnO 2 type .
- the advantage is as follows: Si 3 N 4 tends to be deposited a little less easily, a little slower than a conventional metal oxide such as SnO 2 , ZnO or ZrO 2 by reactive cathodic sputtering.
- the third layer in particular which is the thickest and most important to protect the stack from possible damage resulting from heat treatment
- the most suitable materials for constituting the second and / or the fourth layer are based on silicon oxide, oxynitride and / or silicon oxycarbide or based on a mixed oxide silicon and aluminum.
- a mixed oxide tends to have a better durability, especially chemical, than pure SiO 2 (an example is given in patent EP-791 562).
- the respective proportion of the two oxides can be adjusted to achieve the expected improvement in durability without greatly increasing the refractive index of the layer.
- the glass chosen for the substrate coated with the stack according to the invention or for the other substrates associated with it to form a glazing may be particular, for example extra-clear of the "diamond” type (low in particular iron oxides). ), or be a standard clear-soda-lime glass of the "Planilux” type, or an extra clear glass of which at least one of the faces has a surface texturing of the "Albarino" type (three types of glass sold by Saint-Gobain Glazing).
- coatings according to the invention comprise the following sequences of layers: for a stack with four layers:
- SiAlO here corresponds to a mixed oxide of aluminum and silicon, without prejudging their respective amounts in the material
- the substrates of glass type, especially extra-clear, having this type of stack can thus achieve integrated transmission values between 400 and 1300 nm of at least 90%, especially for thicknesses between 2 mm and 8 mm.
- the subject of the invention is also the substrates coated according to the invention as external substrates for Si or CIS type solar cells.
- This type of product is generally marketed in the form of solar cells mounted in series and arranged between two transparent rigid substrates of the glass type. The cells are held between the substrates by a polymeric (or more) material.
- the solar cells can be placed between the two substrates, then the hollow space between the substrates is filled with a cast polymer capable of hardening, while particularly polyurethane based on the reaction of an aliphatic isocyanate prepolymer and a polyether polyol.
- the polymer may be cured at high temperature (30 to 50 ° C.) and possibly at a slight overpressure, for example in an autoclave.
- Other polymers can be used, such as EVA ethylene vinyl acetate, and other mountings are possible (for example, laminating between the two cell glasses using one or more sheets of thermoplastic polymer) .
- the invention therefore also relates to said modules.
- the solar modules can increase their efficiency by at least 1, 1.5 or 2% (expressed in integrated current density) with respect to modules using the same substrate but without the coating.
- the electric power delivered approximately, we can estimate that a square meter of solar cell can provide about 130 Watt
- each percent of additional yield increases the performance electric, and therefore the price, of a solar module of given dimensions.
- One method of manufacturing the antireflection stack may consist of depositing all the layers, successively, by a vacuum technique, in particular by magnetic field assisted sputtering or corona discharge.
- the oxide layers can be deposited by reactive sputtering of the metal in question in the presence of oxygen and the nitride layers in the presence of nitrogen.
- SiO 2 or Si 3 N 4 one can start from a silicon target that is doped slightly with a metal such as aluminum to make it sufficiently conductive. It is also possible, as recommended by the patent WO97 / 43224, that a part of the layers of the stack is deposited by a hot deposition technique of the CVD type, the rest of the stack being deposited by cold spraying. cathode.
- FIG. 1 illustrates a substrate provided with a four-layer antireflection stack A according to the invention
- FIG. 2 illustrates graphs representing the transmission spectrum of different substrates that are bare or coated with antireflection stacks according to FIGS.
- FIG. 3 illustrates graphs showing the energy gain that can be obtained as a result of a temperature variation, for different types of cells equipped with different substrates.
- FIG. 4 illustrates a solar module integrating the substrate according to FIG.
- Figure 1 very schematic, shows in section a glass 6 surmounted by a antireflection stack (A) with four layers 1, 2, 3, 4.
- A antireflection stack
- Example 1 relates to an extra-clear texture glass of the range "Albarino" which is bare, that is to say it is not coated with any stack.
- T E energy transmission of glass (300-2500nm)
- Example 2 relates to an extra-clear glass texture of the "Albarino" range coated with an antireflection coating based on porous silica. Optical measurements determined a 95.65% Ti and a 94.01% solar factor
- Example 3 relates to an extra-clear texture glass of the "Albarino" range coated with a four-layer antireflection coating. Optical measurements determined a 94.60% Ti and a solar factor of 91.35%
- the Si 3 N 4 can be replaced, for the layer (1) and / or for the layer (3), with SnO 2 ).
- the coated glass of Example 3 is mounted as an outer glass of solar modules.
- Figure 4 very schematically represents a solar module 10 according to the invention.
- the module 10 is constituted as follows: the glass 6 provided with the antireflection coating (A) is associated with a glass 8, said "inner” glass.
- This glass 8 is tempered glass, 4 mm thick, and clear extra-clear type ("Planidur DIAMANT").
- the solar cells 9 are placed between the two glasses, then a polyurethane-based curable polymer 7 is poured into the interlayer in accordance with the teaching of patent EP 0 739 042 mentioned above.
- Each solar cell 9 consists, in known manner, of silicon wafers forming a p / n junction and printed front and rear electrical contacts. Silicon solar cells can be replaced by solar cells using other semiconductors (like CIS, CdTe, a-Si, GaAs, GaInP).
- the selectivity integrating the cell in this case a solar cell based on CIS
- T E glass energy transmission (300-2500nm)
- FIG. 2 shows, for each of the examples 1,
- This figure 2 also shows the evolution of the quantum efficiency of a cell.
- This quantum efficiency for a given cell technology (CIS in this example) makes it possible to quantify the energy conversion efficiency of the cell which is subjected to solar radiation.
- FIG. 3 shows the evolution of the temperature of the substrate of Example 1 and of Example 3 over time, when this substrate is subjected to illumination of a spectrum of wavelengths covering the solar spectrum.
- the substrate of Example 1 which is a bare glass
- the substrate of Example 3 heats substantially more than the same substrate of Example 3 which has an antireflection coating.
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Photovoltaic Devices (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BRPI0620013-3A BRPI0620013A2 (pt) | 2005-12-23 | 2006-12-06 | utilização de um substrato transparente, notadamente vìtreo e modulo solar compreendendo uma pluralidade de células solares |
IL191821A IL191821A0 (en) | 2005-12-23 | 2008-05-29 | Transparent substrate provided with an antireflective coating |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0554064A FR2895522B1 (fr) | 2005-12-23 | 2005-12-23 | Substrat transparent comportant un revetement antireflet |
FR0554064 | 2005-12-23 |
Publications (1)
Publication Number | Publication Date |
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WO2007077373A1 true WO2007077373A1 (fr) | 2007-07-12 |
Family
ID=36888981
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PCT/FR2006/051288 WO2007077373A1 (fr) | 2005-12-23 | 2006-12-06 | Substrat transparent comportant un revetement antireflet |
Country Status (6)
Country | Link |
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KR (1) | KR20080089351A (fr) |
CN (1) | CN101356455A (fr) |
BR (1) | BRPI0620013A2 (fr) |
FR (1) | FR2895522B1 (fr) |
IL (1) | IL191821A0 (fr) |
WO (1) | WO2007077373A1 (fr) |
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WO2010097538A1 (fr) | 2009-02-27 | 2010-09-02 | Saint-Gobain Glass France | Feuille de verre |
WO2010139908A1 (fr) | 2009-06-05 | 2010-12-09 | Saint-Gobain Glass France | Procede de depot de couche mince et produit obtenu |
WO2011045517A2 (fr) | 2009-10-12 | 2011-04-21 | Saint-Gobain Glass France | Procede d'obtention d'une feuille de verre |
WO2011083283A1 (fr) | 2010-01-11 | 2011-07-14 | Saint-Gobain Glass France | Materiau photocatalytique et vitrage ou cellule photovoltaique comprenant ce materiau |
WO2012022874A1 (fr) | 2010-07-27 | 2012-02-23 | Saint-Gobain Glass France | Procede d'obtention d'un materiau comprenant un substrat muni d'un revetement |
WO2013068698A1 (fr) | 2011-11-09 | 2013-05-16 | Saint-Gobain Glass France | Feuille de verre |
US8705169B2 (en) | 2009-03-17 | 2014-04-22 | Juan Luis Rendon Granados | Glass products with anti-reflection properties and methods for the production and use thereof |
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- 2005-12-23 FR FR0554064A patent/FR2895522B1/fr not_active Expired - Fee Related
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- 2006-12-06 KR KR1020087014910A patent/KR20080089351A/ko not_active Application Discontinuation
- 2006-12-06 BR BRPI0620013-3A patent/BRPI0620013A2/pt not_active IP Right Cessation
- 2006-12-06 CN CNA200680048648XA patent/CN101356455A/zh active Pending
- 2006-12-06 WO PCT/FR2006/051288 patent/WO2007077373A1/fr active Application Filing
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- 2008-05-29 IL IL191821A patent/IL191821A0/en unknown
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WO1999045415A1 (fr) * | 1998-03-03 | 1999-09-10 | Saint-Gobain Vitrage | Substrat transparent muni d'un empilement de couches reflechissant le rayonnement thermique |
WO2001037006A1 (fr) * | 1999-11-17 | 2001-05-25 | Saint-Gobain Glass France | Substrat transparent comportant un revetement antireflet |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7542203B2 (en) | 2005-07-15 | 2009-06-02 | Auburn University | Microscope illumination device and adapter |
WO2010097538A1 (fr) | 2009-02-27 | 2010-09-02 | Saint-Gobain Glass France | Feuille de verre |
US8705169B2 (en) | 2009-03-17 | 2014-04-22 | Juan Luis Rendon Granados | Glass products with anti-reflection properties and methods for the production and use thereof |
WO2010139908A1 (fr) | 2009-06-05 | 2010-12-09 | Saint-Gobain Glass France | Procede de depot de couche mince et produit obtenu |
DE202010018224U1 (de) | 2009-06-05 | 2014-10-29 | Saint-Gobain Glass France | Anlage zum Aufbringen und zur Wärmebehandlung von dünnen Schichten |
WO2011045517A2 (fr) | 2009-10-12 | 2011-04-21 | Saint-Gobain Glass France | Procede d'obtention d'une feuille de verre |
WO2011083283A1 (fr) | 2010-01-11 | 2011-07-14 | Saint-Gobain Glass France | Materiau photocatalytique et vitrage ou cellule photovoltaique comprenant ce materiau |
WO2012022874A1 (fr) | 2010-07-27 | 2012-02-23 | Saint-Gobain Glass France | Procede d'obtention d'un materiau comprenant un substrat muni d'un revetement |
WO2013068698A1 (fr) | 2011-11-09 | 2013-05-16 | Saint-Gobain Glass France | Feuille de verre |
US20200158931A1 (en) * | 2018-11-20 | 2020-05-21 | The Regents Of The University Of Michigan | Decorative near-infrared transmission optical filter devices |
US11579348B2 (en) * | 2018-11-20 | 2023-02-14 | The Regents Of The University Of Michigan | Decorative near-infrared transmission optical filter devices |
Also Published As
Publication number | Publication date |
---|---|
CN101356455A (zh) | 2009-01-28 |
BRPI0620013A2 (pt) | 2011-10-25 |
KR20080089351A (ko) | 2008-10-06 |
IL191821A0 (en) | 2008-12-29 |
FR2895522A1 (fr) | 2007-06-29 |
FR2895522B1 (fr) | 2008-04-11 |
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